WO2011007745A1 - Dispositif de traitement par plasma hyperfréquence et procédé de traitement par plasma hyperfréquence - Google Patents

Dispositif de traitement par plasma hyperfréquence et procédé de traitement par plasma hyperfréquence Download PDF

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Publication number
WO2011007745A1
WO2011007745A1 PCT/JP2010/061746 JP2010061746W WO2011007745A1 WO 2011007745 A1 WO2011007745 A1 WO 2011007745A1 JP 2010061746 W JP2010061746 W JP 2010061746W WO 2011007745 A1 WO2011007745 A1 WO 2011007745A1
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WO
WIPO (PCT)
Prior art keywords
microwave
plasma processing
plasma
processing
chamber
Prior art date
Application number
PCT/JP2010/061746
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English (en)
Japanese (ja)
Other versions
WO2011007745A8 (fr
Inventor
公裕 松瀬
修一 石塚
哲朗 ▲高▼橋
Original Assignee
東京エレクトロン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Publication of WO2011007745A1 publication Critical patent/WO2011007745A1/fr
Publication of WO2011007745A8 publication Critical patent/WO2011007745A8/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows

Definitions

  • a stable standing wave is generated to generate plasma, thereby performing processing such as nitriding processing or oxidation processing.
  • a slow wave material 33 having a dielectric constant larger than that of a vacuum is provided on the upper surface of the planar antenna 31 so as to cover at least the entire slot forming portion of the planar antenna 31.
  • the slow wave material 33 can be formed of, for example, quartz, ceramics, a resin such as fluorine resin or polyimide.
  • the slow wave material 33 has a function of adjusting the plasma by shortening the wavelength of the microwave because the wavelength of the microwave becomes longer in vacuum.
  • the planar antenna 31 and the microwave transmission plate 28 and the slow wave member 33 and the planar antenna 31 are arranged in close contact with each other, but may be separated from each other.
  • N 2 gas is introduced into the chamber 1, the N 2 gas is turned into plasma (excitation), and plasma nitridation is performed on the wafer W by the plasma.
  • plasmas having different modes stored in the storage unit 53 are formed so that a plasma nitriding process with high in-plane uniformity can be performed.
  • Two or more processing recipes that can obtain a desired, typically uniform plasma processing distribution are selected from a plurality of processing recipes, and plasma processing is performed on the wafer W by the selected two or more processing recipes. .
  • the plasma is turned off, and then the nitrogen gas is stopped, and the purge gas is supplied into the chamber 1 from a purge gas supply system (not shown) to purge the chamber 1, and then the gate
  • the valve 26 is opened and the wafer W is unloaded from the loading / unloading port 25.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Formation Of Insulating Films (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)

Abstract

L'invention porte sur un dispositif de traitement par plasma hyperfréquence (100) qui comprend : une chambre (1); une source de génération d'hyperfréquence (39); des structures de guide d'onde (37a, 37b, 31, 28); une section d'introduction de gaz (15) qui introduit un gaz pour réaliser un traitement par plasma; un orifice d'évacuation (23) auquel est raccordé un dispositif d'évacuation de gaz pour évacuer le gaz contenu dans la chambre (1); et une section de commande (50) qui règle les conditions de traitement. La section de commande (50) stocke préalablement la distribution de traitement par plasma d'un plasma généré conformément à une pluralité de recettes de traitement par lesquelles un plasma de modes mutuellement différents est formé, sélectionne deux recettes de traitement ou plus par lesquelles la distribution de traitement par plasma désirée peut être obtenue par combinaison desdites recettes de traitement issues de la pluralité de recettes de traitement, et réalise un traitement par plasma conformément aux deux recettes de traitement ou plus sélectionnées.
PCT/JP2010/061746 2009-07-15 2010-07-12 Dispositif de traitement par plasma hyperfréquence et procédé de traitement par plasma hyperfréquence WO2011007745A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009166737 2009-07-15
JP2009-166737 2009-07-15

Publications (2)

Publication Number Publication Date
WO2011007745A1 true WO2011007745A1 (fr) 2011-01-20
WO2011007745A8 WO2011007745A8 (fr) 2011-04-07

Family

ID=43449352

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2010/061746 WO2011007745A1 (fr) 2009-07-15 2010-07-12 Dispositif de traitement par plasma hyperfréquence et procédé de traitement par plasma hyperfréquence

Country Status (2)

Country Link
TW (1) TW201130398A (fr)
WO (1) WO2011007745A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013152968A (ja) * 2012-01-24 2013-08-08 Ulvac Japan Ltd シリコンエッチング装置
WO2013118520A1 (fr) * 2012-02-06 2013-08-15 東京エレクトロン株式会社 Procédé de traitement au plasma et dispositif de traitement au plasma

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10340124B2 (en) 2015-10-29 2019-07-02 Applied Materials, Inc. Generalized cylindrical cavity system for microwave rotation and impedance shifting by irises in a power-supplying waveguide

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09184082A (ja) * 1995-09-25 1997-07-15 Univ Michigan State 選択エッチング方法
JPH1012594A (ja) * 1996-06-20 1998-01-16 Hitachi Ltd スロットアンテナを有するプラズマ処理装置
JP2006107994A (ja) * 2004-10-07 2006-04-20 Tokyo Electron Ltd マイクロ波プラズマ処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09184082A (ja) * 1995-09-25 1997-07-15 Univ Michigan State 選択エッチング方法
JPH1012594A (ja) * 1996-06-20 1998-01-16 Hitachi Ltd スロットアンテナを有するプラズマ処理装置
JP2006107994A (ja) * 2004-10-07 2006-04-20 Tokyo Electron Ltd マイクロ波プラズマ処理装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013152968A (ja) * 2012-01-24 2013-08-08 Ulvac Japan Ltd シリコンエッチング装置
WO2013118520A1 (fr) * 2012-02-06 2013-08-15 東京エレクトロン株式会社 Procédé de traitement au plasma et dispositif de traitement au plasma
JP2013161960A (ja) * 2012-02-06 2013-08-19 Tokyo Electron Ltd プラズマ処理方法及びプラズマ処理装置

Also Published As

Publication number Publication date
WO2011007745A8 (fr) 2011-04-07
TW201130398A (en) 2011-09-01

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