WO2011005026A3 - 도전성 전극형성용 조성물 - Google Patents

도전성 전극형성용 조성물 Download PDF

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Publication number
WO2011005026A3
WO2011005026A3 PCT/KR2010/004417 KR2010004417W WO2011005026A3 WO 2011005026 A3 WO2011005026 A3 WO 2011005026A3 KR 2010004417 W KR2010004417 W KR 2010004417W WO 2011005026 A3 WO2011005026 A3 WO 2011005026A3
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WO
WIPO (PCT)
Prior art keywords
composition
conductive electrodes
forming conductive
present
bond
Prior art date
Application number
PCT/KR2010/004417
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English (en)
French (fr)
Other versions
WO2011005026A2 (ko
Inventor
황건호
정용준
고민수
정미혜
Original Assignee
주식회사 동진쎄미켐
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 주식회사 동진쎄미켐 filed Critical 주식회사 동진쎄미켐
Publication of WO2011005026A2 publication Critical patent/WO2011005026A2/ko
Publication of WO2011005026A3 publication Critical patent/WO2011005026A3/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Conductive Materials (AREA)

Abstract

본 발명은 도전성 전극형성용 조성물에 관한 것으로서, 본 발명에 의한 도전성 전극형성용 조성물은 기판과의 도막부착강도가 높으며, 300 ℃ 이하의 저온영역에서도 우수한 전기비저항 특성을 얻을 수 있고, 태양전지에 적용시 솔더리본과의 용접성이 매우 우수하며, 인쇄특성이 우수하여 고해상도의 전극패턴을 구현할 수 있고, 더욱이 레올로지 특성이 우수하여 높은 종횡비(Aspect ratio)를 구현할 수 있다.
PCT/KR2010/004417 2009-07-09 2010-07-07 도전성 전극형성용 조성물 WO2011005026A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0062430 2009-07-09
KR1020090062430A KR100955496B1 (ko) 2009-07-09 2009-07-09 태양전지 전극형성용 도전성 조성물

Publications (2)

Publication Number Publication Date
WO2011005026A2 WO2011005026A2 (ko) 2011-01-13
WO2011005026A3 true WO2011005026A3 (ko) 2011-04-28

Family

ID=42220504

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/004417 WO2011005026A2 (ko) 2009-07-09 2010-07-07 도전성 전극형성용 조성물

Country Status (3)

Country Link
KR (1) KR100955496B1 (ko)
TW (1) TW201108255A (ko)
WO (1) WO2011005026A2 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101285551B1 (ko) * 2011-08-31 2013-07-18 주식회사 케이씨씨 태양전지 전극 형성용 금속 페이스트
CN102938259A (zh) * 2012-10-31 2013-02-20 彩虹集团公司 一种低温固化导电浆料及其制备方法
CN103117103B (zh) * 2012-12-07 2016-06-08 蚌埠市智峰科技有限公司 一种含有正硅酸乙酯的太阳能电池导电浆料
CN103117104B (zh) * 2012-12-07 2016-05-11 蚌埠市智峰科技有限公司 一种含有邻苯二甲酸酯的太阳能电池导电浆料
KR101387139B1 (ko) * 2013-02-01 2014-04-25 한화케미칼 주식회사 태양전지의 전면전극용 전도성 잉크 조성물 및 이를 이용한 태양전지
CN103996435A (zh) * 2014-05-07 2014-08-20 西安明科微电子材料有限公司 一种AlSiC LED支架专用中温固化导电浆料
CN104575684B (zh) * 2015-01-08 2017-01-04 安徽凤阳德诚科技有限公司 一种含有金铜粉的复合导电银浆
EP3182465B1 (en) 2015-12-18 2020-03-11 Lg Electronics Inc. Method of manufacturing solar cell
CN105529373B (zh) * 2016-01-28 2018-01-16 黄河水电光伏产业技术有限公司 一种晶硅太阳能电池的正面电极

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001023439A (ja) * 1999-05-21 2001-01-26 Thomson Plasma 電極を形成するための化合物及び電極を製造する方法
KR100790847B1 (ko) * 2001-11-23 2008-01-02 삼성에스디아이 주식회사 탄소나노튜브를 포함하는 접착용 복합체 및 이를 이용한전자방출소자 및 그 제조방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100932976B1 (ko) * 2003-08-28 2009-12-21 삼성에스디아이 주식회사 평판표시소자의 전자 방출원 형성용 슬러리 조성물 및이를 이용한 전극 형성 방법
KR101280489B1 (ko) * 2007-05-09 2013-07-01 주식회사 동진쎄미켐 태양전지 전극 형성용 페이스트

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001023439A (ja) * 1999-05-21 2001-01-26 Thomson Plasma 電極を形成するための化合物及び電極を製造する方法
KR100790847B1 (ko) * 2001-11-23 2008-01-02 삼성에스디아이 주식회사 탄소나노튜브를 포함하는 접착용 복합체 및 이를 이용한전자방출소자 및 그 제조방법

Also Published As

Publication number Publication date
TW201108255A (en) 2011-03-01
KR100955496B1 (ko) 2010-04-30
WO2011005026A2 (ko) 2011-01-13

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