WO2011004929A1 - Procédé de fabrication d’une cellule solaire à couleur intégrée - Google Patents

Procédé de fabrication d’une cellule solaire à couleur intégrée Download PDF

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Publication number
WO2011004929A1
WO2011004929A1 PCT/KR2009/003904 KR2009003904W WO2011004929A1 WO 2011004929 A1 WO2011004929 A1 WO 2011004929A1 KR 2009003904 W KR2009003904 W KR 2009003904W WO 2011004929 A1 WO2011004929 A1 WO 2011004929A1
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WO
WIPO (PCT)
Prior art keywords
solar cell
phosphoric acid
color
oxide film
thickness
Prior art date
Application number
PCT/KR2009/003904
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English (en)
Korean (ko)
Inventor
안홍길
Original Assignee
주식회사 순에너지
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Filing date
Publication date
Application filed by 주식회사 순에너지 filed Critical 주식회사 순에너지
Publication of WO2011004929A1 publication Critical patent/WO2011004929A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S20/00—Supporting structures for PV modules
    • H02S20/20—Supporting structures directly fixed to an immovable object
    • H02S20/22—Supporting structures directly fixed to an immovable object specially adapted for buildings
    • H02S20/26—Building materials integrated with PV modules, e.g. façade elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a color design solar cell manufacturing method, and more particularly to a solar cell manufacturing method in which the design is formed in a variety of colors.
  • Solar cells include solar cells that generate steam for rotating turbines using solar heat, and solar cells that convert photons into electrical energy using the properties of semiconductors. Refers to photovoltaic cells (hereinafter referred to as solar cells).
  • a solar cell has a junction structure of a p-type semiconductor 11 and an n-type semiconductor 12 like a diode, and when light is incident on the solar cell, Interaction with the materials that make up the semiconductor causes electrons with negative charge and electrons to escape, creating holes with positive charge, and as they move, current flows. This is called a photovoltaic effect.
  • the p-type 11 and n-type semiconductors 12 constituting the solar cell electrons are attracted toward the n-type semiconductor 12 and holes are drawn toward the p-type semiconductor 11.
  • the electrodes 13 and 14 are joined to the n-type semiconductor 11 and the p-type semiconductor 12, respectively, and when the electrodes 13 and 14 are connected by wires, electricity flows to obtain power.
  • Such a solar cell can be manufactured by forming a conductive layer of a different conductivity type on a semiconductor substrate, and forming an anti-reflection film and a front electrode and a back electrode.
  • the organic substrate is buried or cracked in the as-cut semiconductor substrate, the organic material removal process and the saw damage removal process for removing the cracks Pretreatment must be done.
  • these processes are essential to improve the performance of the solar cell, but the process takes a long time, there is a need to simplify the process and shorten the process time to improve productivity and convenience of operation.
  • FIG. 2 is a graph showing the amount of change in voltage and current according to the amount of insolation.
  • the amount of change in the current I 1 and the voltage V 1 according to the illuminance is shown.
  • the current value I 1 is in the upward direction and it can be seen that the amount of current rapidly increases with the illuminance.
  • the difference in power generation utilization according to the installation location of the building should be reduced, so that the difference in reflectance for each color should be less than 10% to minimize the variation of the current value according to the illuminance.
  • FIG. 3 is a process chart showing a process sequence of the method for manufacturing a building-integrated color solar cell
  • FIG. 4 shows a graph showing a change in voltage and current thereof.
  • the above technology can reduce the difference in reflectance for each color to less than 10% when installing the color solar cell as a building type to make modules by mixing solar cells of various colors, and minimize the difference in power utilization rate according to the installation angle of the building. There is an advantage to this.
  • the present invention for solving the above problems is to provide a solar cell that can be effectively applied to a solar cell power generation structure such as buildings by directing a color design in one solar cell.
  • the present invention provides a method of manufacturing a color design solar cell, comprising: a first step of aligning a mask to an upper portion of a processed wafer, and corresponding to a desired color on the wafer on which the mask is aligned; The second step of applying the phosphoric acid in different thickness, the third step of forming the oxide film by wet oxidation while the phosphoric acid application is completed and the formation of the electrode on the surface of the solar cell formed oxide film It comprises a fourth step.
  • the second step is characterized in that the phosphate liquid is sprayed by ultrasonic waves and applied to the wafer in a mask pattern.
  • the third step it is characterized in that the diffusion and oxidation are performed simultaneously by heating at a temperature of 800 to 1100 degrees.
  • the fourth step is to form the front electrode and the back electrode, respectively, characterized in that to form corresponding to the portion of the phosphoric acid diffusion by the third step.
  • the second step may be formed in different colors as the thickness of the oxide film is changed after the third step by varying the coating thickness of the phosphoric acid according to the desired color.
  • the third step is characterized in that the oxide film thickness is determined at 50nm to 1000nm.
  • the third step is characterized by adjusting the color of the phosphate coating thickness as a whole by adjusting the thickness of the oxide film.
  • the present invention constructed and operated as described above has an advantage in that it is possible to provide a high design solar cell because a color design can be expressed for any image desired by a user in one cell.
  • FIG. 1 is a cross-sectional view showing the configuration of a typical solar cell
  • FIG. 2 is a graph showing a change in voltage and current of a solar cell according to a conventional solar radiation
  • FIG. 3 is a process chart showing a process sequence of a manufacturing method of a solar cell according to an embodiment of the present invention complementing the prior art according to FIG.
  • FIG. 4 is a graph showing a change in voltage and current by the manufacturing method according to the prior art of FIG.
  • 5 to 12 is a process chart showing the process sequence of the colored solar cell manufacturing method according to the invention.
  • 13 to 14 is a cross-sectional view showing the oxide film thickness according to the phosphoric acid thickness to vary the color for each region in another embodiment according to the present invention
  • FIG. 15 is a plan view showing an embodiment of a color design solar cell according to the present invention.
  • FIG. 16 is a view showing an embodiment of a solar cell according to the present invention.
  • wafer 200 mask
  • 5 to 12 is a process chart showing the process sequence of the color design solar cell manufacturing method according to the present invention
  • Figure 13 to 14 is another embodiment according to the present invention is formed oxide film thickness according to the phosphoric acid thickness for implementing the color design
  • 15 is a plan view showing an embodiment of a color design solar cell according to the present invention
  • Figure 16 is a view showing an embodiment of a solar cell according to the present invention.
  • a first step of aligning a mask to an upper part of a processed wafer, and according to a desired color on the wafer on which the mask is aligned A second step of correspondingly applying phosphoric acid to a different thickness, and a third step of expanding the phosphoric acid when the phosphoric acid application is completed and simultaneously forming an oxide film by wet oxidation; And a fourth step of forming an electrode on a surface of the solar cell in which an oxide film is formed.
  • the silicon wafer 100 is prepared. Conventional wafers are grooved or textured to reduce reflectance.
  • the silicon wafer 100 used in the embodiment of the present invention flattens the top surface.
  • Phosphoric acid 300 is applied to the surface based on the silicon wafer 100 having a flat top.
  • a desired pattern may be formed on the wafer 100 by using the mask 200. That is, the mask is disposed on the silicon wafer, and phosphoric acid is applied on the upper part by the alignment pattern of the mask to form a pattern on the wafer 100.
  • the mask in order to produce a color design in one battery, is formed in a pattern such as an arbitrary shape, a phrase, a figure, etc. according to the color direction of the mask pattern.
  • the phosphoric acid 300 may be sprayed by ultrasonic waves from a filling device (not shown) filling the upper portion of the phosphoric acid liquid.
  • a filling device not shown
  • the phosphoric acid 300 is applied to the wafer surface of the wafer 41 to complete the patterning of the emitter.
  • the process is performed again as necessary to determine the coating thickness of phosphoric acid in order to change the color according to an arbitrary shape. That is, in order to form a color different from the thickness of the first applied phosphoric acid, the thickness is adjusted by applying the phosphoric acid once again to a desired area.
  • the thickness of the phosphoric acid may be different for each region to partially represent the color of the final solar cell.
  • the wafer 100 which has been patterned by the application of phosphoric acid 300, is transferred into the chamber, and several sheets are arranged at regular intervals in a tube-shaped furnace to simultaneously perform diffusion and oxidation processes. That is, when the temperature of the wafer 100 is heated from 800 to 1100 degrees in the chamber, phosphoric acid is adsorbed into the inside by diffusion, and at the same time, the oxide film 320 is grown by wet oxidation.
  • the oxide film is an antireflection film
  • the color of the solar cell may be adjusted according to the thickness of the oxide film during wet oxidation.
  • the oxide film is adjusted within the range of 50 nm to 1000 nm, various colors of the solar cell can be obtained. Therefore, it is necessary to determine the phosphoric acid thickness according to the desired color by determining the color information according to the previously confirmed oxide film thickness as the phosphoric acid thickness.
  • the adjustment of the color according to the thickness of the phosphoric acid described above has an effect on the final color determined according to the thickness of the oxide film, where the oxide film is thickly formed where the phosphoric acid is thickly applied and the oxide film is thinly formed where the phosphoric acid is thinly coated. Adjust the color.
  • the entire color can be controlled by forming an oxide film over the entire wafer area. This is, for example, if the phosphoric acid thickness is three levels, the color for each level depends on the thickness of the oxide film. However, if the thickness of the oxide film is adjusted differently, the color of each level is different. For example, if the colors of the first and second levels are blue and blond, the total thickness of the oxide film is adjusted by varying the heating time, and the first level is blond and the second level is magenta.The entire area varies depending on the phosphate coating thickness and the oxide film thickness control. You lose.
  • the patterned phosphoric acid layer is diffused into the silicon wafer 100 in which the phosphoric acid layer 310 is patterned.
  • an oxide film 320 is formed on the silicon wafer 100 to serve as an anti-reflection film of the solar cell.
  • the thickness of the oxide film is appropriately adjusted to any one of 50nm to 1000nm to change the color of the solar cell, it is also possible to produce solar cells of various colors. In this way, in the process of FIG. 9, diffusion and oxidation occur simultaneously, thereby simplifying the process. 10 shows a process of coating the front electrode 46 on the silicon wafer 100 having the phosphoric acid 310 and the oxide film diffused therein.
  • the electrode when the front electrode is coated, the electrode is partially formed in a predetermined pattern shape on the silicon wafer 100 on which the pattern is formed. That is, the front electrode 400 is formed only in the portion where the phosphoric acid is diffused, so that a diffusion difference occurs between the emitter and the electrode, thereby enabling ohmic contact of the electrode, thereby reducing the contact resistance and increasing the voltage. In this way, when the formation of the front electrode 400 is partially completed, the back electrode should be coated. This process is shown in FIG.
  • the thickness of the oxide film is eventually changed according to the thickness of the phosphoric acid coating, thereby forming various colors according to the thickness of the phosphoric acid thickness region.
  • the phrase area may be expressed in a different color from the background area. That is, the stationery area is implemented by applying a different thickness of phosphate coating than the background area.
  • 16 represents an image by applying different color designs using several cells.
  • the present invention configured as described above has the advantage of having a high design because it can produce a variety of colors by varying the phosphoric acid coating thickness for each solar cell.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Architecture (AREA)
  • Civil Engineering (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Procédé de fabrication d’une cellule solaire comprenant les opérations suivantes : alignement d’un masque sur la partie supérieure d’une tranche ; application d’acides phosphoriques en couches d’épaisseurs différentes sur la partie supérieure de la tranche sur laquelle le masque est aligné ; formation d’une couche d’oxyde consistant à étendre et à soumettre à oxydation humide les acides phosphoriques simultanément une fois leur application de terminée ; et formation d’une électrode sur la surface de la tranche. Cette invention offre divers avantages : possibilité d’intégrer une conception souhaitée dans une seule cellule ; meilleure utilisation grâce à l’intégration des données de conception de chaque cellule lors de la réalisation d’un module ; et maximisation de l’effet esthétique pour des immeubles, en particulier ceux équipés d’un ensemble intégré de cellules solaires.
PCT/KR2009/003904 2009-07-10 2009-07-15 Procédé de fabrication d’une cellule solaire à couleur intégrée WO2011004929A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0062978 2009-07-10
KR1020090062978A KR100952428B1 (ko) 2009-07-10 2009-07-10 칼라 디자인 태양전지 제조방법

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WO2011004929A1 true WO2011004929A1 (fr) 2011-01-13

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3047353A1 (fr) * 2016-02-02 2017-08-04 Ardeje Dispositif multicolore de conversion d'energie et procede de structuration tridimensionnelle des couches minces

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI435462B (zh) * 2011-03-29 2014-04-21 Gintech Energy Corp 多色彩畫作型太陽能電池的製造方法
CN103258902A (zh) * 2012-02-17 2013-08-21 杜邦太阳能有限公司 处理一光伏组件的方法及光伏组件
US20170200835A1 (en) * 2016-01-13 2017-07-13 Alta Devices, Inc. Method for selectively coloring metal contacts in optoelectronic device
KR20190132704A (ko) 2018-04-20 2019-11-29 주식회사 아이델 다양한 색상을 나타내는 태양전지

Citations (3)

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Publication number Priority date Publication date Assignee Title
JP2002076399A (ja) * 2000-08-30 2002-03-15 Shin Etsu Handotai Co Ltd 太陽電池セルの製造方法およびこの方法で製造された太陽電池セル
JP2007184580A (ja) * 2005-12-29 2007-07-19 Samsung Sdi Co Ltd 太陽電池及びその製造方法
KR20080045598A (ko) * 2006-11-20 2008-05-23 주식회사 엘지화학 태양전지 및 그의 제조방법

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Publication number Priority date Publication date Assignee Title
JP2006257144A (ja) 2005-03-15 2006-09-28 Dainippon Printing Co Ltd 太陽電池モジュール用表面保護シート

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
JP2002076399A (ja) * 2000-08-30 2002-03-15 Shin Etsu Handotai Co Ltd 太陽電池セルの製造方法およびこの方法で製造された太陽電池セル
JP2007184580A (ja) * 2005-12-29 2007-07-19 Samsung Sdi Co Ltd 太陽電池及びその製造方法
KR20080045598A (ko) * 2006-11-20 2008-05-23 주식회사 엘지화학 태양전지 및 그의 제조방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3047353A1 (fr) * 2016-02-02 2017-08-04 Ardeje Dispositif multicolore de conversion d'energie et procede de structuration tridimensionnelle des couches minces
WO2017134095A1 (fr) * 2016-02-02 2017-08-10 Ardeje Dispositif multicolore de conversion d'énergie et procédé de structuration tridimensionnelle des couches minces

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