WO2011000544A1 - Couche de silicium cristallin sur un substrat, son procédé de production et son utilisation - Google Patents

Couche de silicium cristallin sur un substrat, son procédé de production et son utilisation Download PDF

Info

Publication number
WO2011000544A1
WO2011000544A1 PCT/EP2010/003931 EP2010003931W WO2011000544A1 WO 2011000544 A1 WO2011000544 A1 WO 2011000544A1 EP 2010003931 W EP2010003931 W EP 2010003931W WO 2011000544 A1 WO2011000544 A1 WO 2011000544A1
Authority
WO
WIPO (PCT)
Prior art keywords
silicon layer
substrate
layer
crystalline silicon
heating
Prior art date
Application number
PCT/EP2010/003931
Other languages
German (de)
English (en)
Inventor
Stefan Janz
Stefan Lindekugel
Stefan Reber
Original Assignee
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Albert-Ludwigs-Universität Freiburg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., Albert-Ludwigs-Universität Freiburg filed Critical Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Priority to EP10732651A priority Critical patent/EP2449578A1/fr
Publication of WO2011000544A1 publication Critical patent/WO2011000544A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1872—Recrystallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • Crystalline silicon layer on a substrate process for its preparation and use
  • the invention relates to a method for producing a crystalline silicon layer on a substrate, in which a deposition of a metal layer on a substrate and subsequent deposition of a silicon layer on the metal layer takes place. Subsequently, a zone-controlled heating of the silicon layer is carried out and finally the metal layer is removed. According to the invention, the crystalline silicon layer thus prepared is also provided.
  • the method according to the invention for producing sensors, silicon-based light-emitting diodes, flat-panel displays or optical filters is used.
  • the metal-induced layer exchange process (often carried out with aluminum, hence called aluminum-induced layer exchange ALILE) is a well-known and used phenomenon by which amorphous silicon layers can be transferred into microcrystalline ones. So far, this is done by a homogeneous heating and cooling of the substrate with layer. The result is spontaneous, relatively poorly controlled nucleation in the layer, and thus a very small-crystalline grain distribution with crystal sizes in the micron range.
  • ALILE aluminum-induced layer exchange process
  • Recrystallization of the layer is ensured.
  • the process described there is used in particular in the production of crystalline silicon thin-film solar cells or in SOI technology. Based on this, it was an object of the present invention to provide a method that has lower process times compared to the prior art and can be generated with the crystalline silicon layers with larger crystals.
  • a method for producing a crystalline silicon layer on a substrate which is based on the following process steps: a) deposition of a metal layer on one
  • the advantages of the method according to the invention in comparison to the methods known from the prior art are based on the one hand on the better control of the crystal size and on the other on a significant reduction of the process time.
  • the advantages compared to known methods can increase the efficiency potential of the solar cell processed from the layers and at the same time increase the throughput rate of the process.
  • the metal layer is made of a metal selected from the group consisting of aluminum, nickel, palladium, copper and silver. It is also possible that the metal layer contains one of the aforementioned metals. Particularly preferably, the metal layer consists of aluminum.
  • an amorphous or microcrystalline silicon layer which is optionally doped or partially alloyed, is preferably deposited.
  • Suitable dopants are boron, phosphorus, arsenic, gallium and antimony.
  • germanium is suitable for alloy formation.
  • An essential process step is the zone-guided heating of the silicon layer. The heating is preferably carried out in a zone heating furnace.
  • heat sources are used which are preferably selected from the group consisting of electron beam heaters, laser beam sources, graphite strip heaters, halogen lamp heaters, IR emitters and UV emitters.
  • the heat sources are additionally provided with focusing mirrors. This serves to better localize the heat radiation.
  • a relative movement preferably takes place from substrate to heat source.
  • This can be realized, for example, by using a stationary substrate while the heat source is movable.
  • Another variant provides that the heat source is stationary and the substrate is moved.
  • both the heat source and the substrate are movable and are shifted from one another.
  • step d) is preferably carried out by wet-chemical etching, plasma etching
  • the exposed silicon layer is epitaxially thickened. This is preferably done by chemical vapor deposition at atmospheric or low pressure, molecular beam epitaxy, laser assisted recrystallization, solid state recrystallization, and ion beam assisted coating. According to the invention is also a crystalline
  • Silicon layer which can be produced by the method described above.
  • the crystalline silicon layer preferably has elongated crystal structures in the transport direction. Under elongated crystal structures is here to understand that the spatial extent of the crystallites in the transport direction is greater than perpendicular to it. Ideally, the electronic diffusion length of the minority charge carriers in the layer is greater than the layer thickness itself.
  • the process according to the invention is used in particular in the field of photovoltaics. Likewise, however, the method can also be used for the production of sensors, silicon-based light-emitting diodes, flat-panel displays or optical filters.
  • the process flow is shown with reference to a schematic representation.
  • a substrate 1 On a substrate 1, an aluminum layer with a layer thickness of less than 1 ⁇ m is first applied.
  • On the aluminum layer 2 is also less than 1 micron thick amorphous or microcrystalline

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un procédé de production d'une couche de silicium cristallin sur un substrat, procédé consistant à déposer une couche métallique sur un substrat, puis à déposer une couche de silicium sur la couche métallique. La couche de silicium est ensuite réchauffée par zones successives et, finalement, la couche métallique est enlevée. Conformément à l'invention, on prépare de même la couche de silicium cristallin ainsi produite. Le procédé selon l'invention trouve son utilisation pour la production de détecteurs, de diodes luminescentes à base de silicium, d'écrans plats ou de filtres optiques.
PCT/EP2010/003931 2009-07-01 2010-06-29 Couche de silicium cristallin sur un substrat, son procédé de production et son utilisation WO2011000544A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP10732651A EP2449578A1 (fr) 2009-07-01 2010-06-29 Couche de silicium cristallin sur un substrat, son procédé de production et son utilisation

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009031357.5 2009-07-01
DE102009031357A DE102009031357A1 (de) 2009-07-01 2009-07-01 Kristalline Siliciumschicht auf einem Substrat, Verfahren zu deren Herstellung und Verwendung

Publications (1)

Publication Number Publication Date
WO2011000544A1 true WO2011000544A1 (fr) 2011-01-06

Family

ID=42688677

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2010/003931 WO2011000544A1 (fr) 2009-07-01 2010-06-29 Couche de silicium cristallin sur un substrat, son procédé de production et son utilisation

Country Status (3)

Country Link
EP (1) EP2449578A1 (fr)
DE (1) DE102009031357A1 (fr)
WO (1) WO2011000544A1 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004033769A1 (fr) * 2002-10-08 2004-04-22 Unisearch Limited Methode de fabrication de films semi-conducteurs cristallins sur des substrats etrangers
DE102005043303A1 (de) 2005-09-12 2007-03-15 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Rekristallisierung von Schichtstrukturen mittels Zonenschmelzen, hierfür verwendete Vorrichtung und dessen Verwendung
WO2009018472A1 (fr) * 2007-07-31 2009-02-05 The Regents Of The University Of California Fabrication à basse température de films semi-conducteurs polycristallins par cristallisation induite par métal améliorée

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1605499A3 (fr) * 2004-06-07 2009-12-02 Imec Procédé de fabrication d'une couche de silicium cristallin

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004033769A1 (fr) * 2002-10-08 2004-04-22 Unisearch Limited Methode de fabrication de films semi-conducteurs cristallins sur des substrats etrangers
DE102005043303A1 (de) 2005-09-12 2007-03-15 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Rekristallisierung von Schichtstrukturen mittels Zonenschmelzen, hierfür verwendete Vorrichtung und dessen Verwendung
WO2009018472A1 (fr) * 2007-07-31 2009-02-05 The Regents Of The University Of California Fabrication à basse température de films semi-conducteurs polycristallins par cristallisation induite par métal améliorée

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
FUHS W ET AL: "A novel route to a polycrystalline silicon thin-film solar cell", SOLAR ENERGY, PERGAMON PRESS. OXFORD, GB LNKD- DOI:10.1016/J.SOLENER.2004.05.002, vol. 77, no. 6, 1 December 2004 (2004-12-01), pages 961 - 968, XP004661836, ISSN: 0038-092X *
LECHNER R ET AL: "Thin polycrystalline SiGe films by aluminium-induced layer exchange", PHYSICA STATUS SOLIDI (C), WILEY - VCH VERLAG, BERLIN, DE LNKD- DOI:10.1002/PSSC.200404330, no. 5, 1 January 2004 (2004-01-01), pages 1131 - 1143, XP009109176, ISSN: 1610-1634 *
See also references of EP2449578A1 *

Also Published As

Publication number Publication date
DE102009031357A1 (de) 2011-01-05
EP2449578A1 (fr) 2012-05-09

Similar Documents

Publication Publication Date Title
EP2539942B1 (fr) Procédé et dispositif pour fabrication d'une couche de semiconducteur
DE112013005407B4 (de) Verfahren zur Herstellung von Halbleiter-Epitaxiewafern, Halbleiter-Epitaxiewafer, und Verfahren zur Herstellung von Festkörper-Bildsensorvorrichtungen
DE2754652A1 (de) Verfahren zum herstellen von silicium-photoelementen
DE102008055515A1 (de) Verfahren zum Ausbilden eines Dotierstoffprofils
CN102484164A (zh) 化合物薄膜太阳能电池及其制造方法
DE102012108901A1 (de) Verfahren und System zum Herstellen von Chalcogenid-Halbleitermaterialien unter Verwendung von Sputter- und Verdampfungsfunktionen
EP2133907B1 (fr) Couches fines de silicium poly-cristallin fabriquées par échange de couches induit par du métal et soutenu par du titane
EP2108052B1 (fr) Pulvérisation magnétron réactive pour dépôt à grande échelle de couches absorbantes de chalcopyrite pour cellules solaires à couches minces
DE112017004982B4 (de) Solarzellen mit differenziertem p-Typ- und n-Typ-Bereichsarchitekturen
DE3209548A1 (de) Solarzellenanordnung in duennschichtbauweise aus halbleitermaterial sowie verfahren zu ihrer herstellung
EP2823505B1 (fr) Procédé de réalisation d'une zone dopée dans une couche de semi-conducteur
DE102012104616B4 (de) Verfahren zum Bilden einer Fensterschicht in einer Dünnschicht-Photovoltaikvorrichtung auf Cadmiumtelluridbasis
EP2162563B1 (fr) Couche de tco résistant à la température et son procédé de réalisation
EP1792349B1 (fr) Procede de recristallisation et de dopage simultanes de couches semi-conductrices et systemes de couches semi-conductrices fabriques selon ledit procede
DE102020001980A1 (de) Verfahren und Anlage zur Herstellung eines Ausgangsmaterials für eine Siliziumsolarzelle mit passivierten Kontakten
WO2011000544A1 (fr) Couche de silicium cristallin sur un substrat, son procédé de production et son utilisation
DE102008009337A1 (de) Verfahren zur Herstellung einer transparenten leitfähigen Schicht
EP3446329B1 (fr) Plaquette de silicium pour un composant electronique, et son procédé de production
DE102012004314A1 (de) Verfahren zur Herstellung einer dünnen Si-Absorberschicht, Dünnschicht-Silizium-Absorber und seine Verwendung
JP2011519158A (ja) シリコン系薄膜太陽電池の製造方法
DE102010044014A1 (de) Kristallisationsverfahren zur Erzeugung kristalliner Halbleiterschichten
WO2009030374A1 (fr) Procédé pour former un contact métallique arrière sur un composant semi-conducteur, en particulier une cellule solaire
DE102005045096A1 (de) Dünnschichtsolarzelle und Verfahren zur Herstellung eines Halbleiterbauelements
DE112011100856B4 (de) Verfahren und Einheit zur Herstellung eines monokristallinen Blatts
DE102010018595A1 (de) Verfahren zur Herstellung einer Verbindungshalbleiterschicht

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10732651

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2010732651

Country of ref document: EP