WO2010147361A3 - 단결정 실리콘 잉곳 성장장치의 프로세스 용기 보호 시스템 - Google Patents

단결정 실리콘 잉곳 성장장치의 프로세스 용기 보호 시스템 Download PDF

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Publication number
WO2010147361A3
WO2010147361A3 PCT/KR2010/003833 KR2010003833W WO2010147361A3 WO 2010147361 A3 WO2010147361 A3 WO 2010147361A3 KR 2010003833 W KR2010003833 W KR 2010003833W WO 2010147361 A3 WO2010147361 A3 WO 2010147361A3
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WO
WIPO (PCT)
Prior art keywords
process chamber
coolant
high temperature
chamber
single crystal
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PCT/KR2010/003833
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English (en)
French (fr)
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WO2010147361A2 (ko
Inventor
이종구
Original Assignee
퀄리플로나라테크(주)
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Application filed by 퀄리플로나라테크(주) filed Critical 퀄리플로나라테크(주)
Publication of WO2010147361A2 publication Critical patent/WO2010147361A2/ko
Publication of WO2010147361A3 publication Critical patent/WO2010147361A3/ko

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)

Abstract

본 발명은 단결정 실리콘 잉곳 성장장치의 프로세스 용기에 관한 것으로, 특히 실리콘 웨이퍼의 기반이 되는 단결정 실리콘 잉곳 성장장치의 중요 구성품에 해당되는 프로세스 용기를 고온으로부터 보호하기 위한 방법에 관한 것으로, 보다 상세하게는 프로세스 용기에 냉각수 가이드 라인을 형성하여 냉각수의 흐름을 원활하게 유지함으로써 히터에서 방출되는 섭씨 1000도 이상의 고온으로부터 프로세스 용기를 보호할 수 있는 방법에 관한 것이다. 이를 위하여 본 발명은 프로세스 용기의 외측 용기와 내측 용기 사이의 이격되어진 공간 상부에 냉각수 가이드 라인을 설치하고 프로세스 외측 용기 하부에 설치된 냉각수 주입구에 냉각수를 투입하여 프로세스 외측 용기 상부에 설치되어진 냉각수 배출구로 냉각수가 원활히 순환되어 배출되도록 구성함에 따라 프로세스 용기 내부의 히터에서 발생하는 섭씨 1000도 이상의 고온으로부터 프로세스 용기에 가해지는 열을 냉각시켜 프로세스 용기를 보호하는 것을 특징으로 한다. 상술한 바와 같이 구성함에 따라 복잡한 구성을 갖추지 않고 프로세스 용기를 고온으로부터 보호할 수 있는 특징을 가지고 있다.
PCT/KR2010/003833 2009-06-16 2010-06-15 단결정 실리콘 잉곳 성장장치의 프로세스 용기 보호 시스템 WO2010147361A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0053261 2009-06-16
KR1020090053261A KR100966525B1 (ko) 2009-06-16 2009-06-16 단결정 실리콘 잉곳 성장장치의 프로세스 용기 보호 시스템

Publications (2)

Publication Number Publication Date
WO2010147361A2 WO2010147361A2 (ko) 2010-12-23
WO2010147361A3 true WO2010147361A3 (ko) 2011-03-31

Family

ID=42370515

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/003833 WO2010147361A2 (ko) 2009-06-16 2010-06-15 단결정 실리콘 잉곳 성장장치의 프로세스 용기 보호 시스템

Country Status (2)

Country Link
KR (1) KR100966525B1 (ko)
WO (1) WO2010147361A2 (ko)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950003432B1 (ko) * 1990-11-09 1995-04-12 후지쓰 가부시끼가이샤 안정성을 향상시킨 물질 성장장치
JPH0848594A (ja) * 1994-08-09 1996-02-20 Mitsubishi Materials Corp 単結晶引上装置
JPH09246195A (ja) * 1996-03-07 1997-09-19 Nissin Electric Co Ltd 縦型気相成長装置
JP2002068887A (ja) * 2000-08-31 2002-03-08 Shin Etsu Handotai Co Ltd 半導体単結晶の製造装置及びそれを用いた半導体単結晶の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960004486B1 (ko) * 1993-07-05 1996-04-06 주식회사엘지화학 산수유, 작약, 고본을 함유하는 한방비누 조성물
KR100885215B1 (ko) * 2007-06-22 2009-02-24 주식회사 포스코 냉각수 여과 장치

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950003432B1 (ko) * 1990-11-09 1995-04-12 후지쓰 가부시끼가이샤 안정성을 향상시킨 물질 성장장치
JPH0848594A (ja) * 1994-08-09 1996-02-20 Mitsubishi Materials Corp 単結晶引上装置
JPH09246195A (ja) * 1996-03-07 1997-09-19 Nissin Electric Co Ltd 縦型気相成長装置
JP2002068887A (ja) * 2000-08-31 2002-03-08 Shin Etsu Handotai Co Ltd 半導体単結晶の製造装置及びそれを用いた半導体単結晶の製造方法

Also Published As

Publication number Publication date
KR100966525B1 (ko) 2010-06-29
WO2010147361A2 (ko) 2010-12-23

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