WO2010143389A1 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
WO2010143389A1
WO2010143389A1 PCT/JP2010/003752 JP2010003752W WO2010143389A1 WO 2010143389 A1 WO2010143389 A1 WO 2010143389A1 JP 2010003752 W JP2010003752 W JP 2010003752W WO 2010143389 A1 WO2010143389 A1 WO 2010143389A1
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WO
WIPO (PCT)
Prior art keywords
transparent member
resin
semiconductor element
substrate
semiconductor device
Prior art date
Application number
PCT/JP2010/003752
Other languages
French (fr)
Japanese (ja)
Inventor
高山義樹
大広雅彦
丸尾哲正
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パナソニック株式会社
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Publication of WO2010143389A1 publication Critical patent/WO2010143389A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Definitions

  • the present invention relates to a semiconductor device including light emitting / receiving elements.
  • Patent Document 1 proposes a structure in which a transparent member is directly attached to a light receiving region of a semiconductor element including a light receiving element with a transparent adhesive to reduce the size and thickness.
  • a transparent member is attached to the light receiving region via a transparent adhesive, and a semiconductor element having a plurality of bonding pads is die-bonded on the substrate. Each bonding pad and a plurality of connection terminals provided on the substrate are electrically connected by Au wires.
  • the side surface of the transparent member, the semiconductor element, and the Au wire are covered with a resin.
  • This structure eliminates the need for the area of the side wall portion where the conventional transparent member is bonded, and can reduce the size, and at the same time eliminates the space from the conventional chip to the transparent member, thereby reducing the thickness.
  • the surface of the upper mold portion of the mold (hereinafter referred to as the upper mold) is used so that the sealing resin does not protrude from the upper surface of the transparent member when resin molding is performed with the mold. It is necessary to increase the degree of adhesion between the transparent member and the upper surface of the transparent member.
  • the chip die-bonded on the substrate has a slight inclination with respect to the surface of the substrate
  • the transparent member bonded to the chip via a transparent adhesive also has a slight amount with respect to the surface of the chip. Since there is an inclination and the surface of the transparent member is slightly inclined with respect to the surface of the substrate, the surface of the upper mold and the upper surface of the transparent member are not sufficiently adhered.
  • the resin enters from the gap between the surface of the upper mold and the upper surface of the transparent member, adheres to the upper surface of the transparent member, and causes a problem that adversely affects the optical characteristics.
  • the present invention is less likely to cause the sealing resin to protrude from the upper surface of the transparent member in a semiconductor device including light emitting and receiving elements, thereby reducing the problems in optical properties, being small, and having a quality level. It is an object of the present invention to provide a high semiconductor device and a manufacturing method thereof.
  • a semiconductor device is die-bonded to a substrate, a protrusion provided on the substrate, and an upper surface of the protrusion, and at least one of a light receiving region and a light emitting region.
  • a semiconductor element having a transparent member attached to the light receiving region and the light emitting region, a side surface of the transparent member, and a resin covering the semiconductor element, and the area of the upper surface of the protrusion is The resin is filled in the gap between the lower surface of the semiconductor element and the substrate, which is smaller than the area of the lower surface of the semiconductor element.
  • the light receiving region and the light emitting region refer to regions having a light receiving function and a light emitting function, respectively, in the semiconductor element.
  • the gap between the lower surface of the semiconductor element and the substrate is filled with resin.
  • the protrusions are not limited in shape, size, and height, but in order to obtain good resin filling properties and sufficient push-up force from the lower direction,
  • the thickness is preferably 0.1 mm or more, and the area is preferably smaller than the area occupied by the transparent member on the semiconductor element.
  • the protrusion may be composed of a plurality of small protrusions.
  • the resin is also filled in the gap between the lower surface of the semiconductor element and the substrate.
  • 1A to 1C are a cross-sectional view and a back plan view of a semiconductor device according to an embodiment of the present invention.
  • 2A to 2H are cross-sectional views showing respective steps of the method for manufacturing a semiconductor device according to the embodiment of the present invention.
  • each component is different from the actual dimensions from the viewpoint of easy understanding and drawing creation.
  • the number of components, such as electrodes and terminals is different from the actual number and is easy to show.
  • the material of each constituent member is not limited to the material described below.
  • FIG. 1A is a cross-sectional view and a back plan view of one embodiment of a semiconductor device according to an embodiment of the present invention.
  • a semiconductor element 2 having a light emitting / receiving region is die-bonded on a protrusion 10 of a substrate 3.
  • the semiconductor element 2 has the transparent member 1 attached to the light emitting / receiving area via the transparent adhesive 12 and has a plurality of bonding pads (not shown).
  • Each bonding pad and a plurality of connection terminals 6 provided on the substrate 3 are electrically connected by a bonding wire 5.
  • the side surface of the transparent member 1, the semiconductor element 2, and the bonding wire 5 are covered with a resin 4.
  • the upper surface of the transparent member 1 is exposed from the resin 4.
  • the feature of the semiconductor device according to the present embodiment is that the area of the protrusion 10 of the substrate 3 to which the semiconductor element 2 is die-bonded is smaller than the area of the lower surface of the semiconductor element 2.
  • the lower surface side of the semiconductor element 2 is also filled with resin.
  • the resin 4 is molded, when the resin is filled while pressing the upper surface of the transparent member 1 with the surface of the upper mold (not shown), the semiconductor 4 is filled with the resin 4 filled on the lower surface side of the semiconductor element 2. Since a force for pushing the element 2 upward is generated, the degree of adhesion between the upper mold surface and the upper surface of the transparent member is increased.
  • the shape of the upper surface of the protrusion 10 is not limited to the rectangle as shown in FIG. 1A, and may be a circle as shown in FIG. 1B, for example. Moreover, as shown in FIG.1 (c), the protrusion 10 may be comprised from the several small protrusion.
  • the height of the protrusion 10 is preferably 0.1 mm or more, and the area is preferably smaller than the area of the transparent member 1. Thereby, it is possible to obtain a good resin filling property and a sufficient pushing force from the lower surface side of the semiconductor element 2 upward.
  • the protrusion 10 may be formed by etching the substrate 3 or may be formed by adhering a resin member or a metal member to the substrate 3.
  • the material of the base material of the semiconductor element 2 may be, for example, silicon.
  • a light emitting diode, or the like for example, a III-V group compound or a II-VI group A compound or the like may be used.
  • the transparent member 1 has a size that can cover the entire surface of the light receiving and emitting region of the semiconductor element 2. Moreover, while the upper surface and lower surface of the transparent member 1 are processed into the mutually parallel optical plane, the side surface of the transparent member 1 is a plane perpendicular
  • the material of the transparent member 1 may be, for example, a borosilicate glass plate, or a quartz plate having birefringence characteristics in order to prevent moiré due to interference fringes in a specific direction or A low-pass filter made of calcite board may be used.
  • the material of the transparent member 1 may be a low-pass filter in which a quartz plate or a calcite plate is bonded to both sides of the infrared cut filter so that the birefringence characteristics are orthogonal to each other, or a transparent epoxy resin plate A transparent acrylic resin plate or a transparent alumina plate may be used.
  • the thickness of the transparent member 1 is set in the range of 200 ⁇ m to 1000 ⁇ m, preferably in the range of 300 ⁇ m to 700 ⁇ m.
  • the reason why the lower limit of the thickness of the transparent member 1 is set to 200 ⁇ m is that the mounting height at the time of mounting the semiconductor device composed of the transparent member 1, the transparent adhesive 12, the resin 4, the semiconductor element 2, etc. is set to 500 ⁇ m or less. This is for realizing a small size and a thin shape.
  • the reason why the upper limit of the thickness of the transparent member 1 is set to 1000 ⁇ m is to realize a transmittance of 90% or more for incident light having a wavelength of 500 nm.
  • the reason why the preferable range of the thickness of the transparent member 1 is set to a range from 300 ⁇ m to 700 ⁇ m is that the most stable semiconductor device can be produced by using the current manufacturing technology, and a low-cost general-purpose product as a constituent member This is because an inexpensive, small and thin semiconductor device is realized by using the above.
  • the thickness of the transparent member 1 when using a transparent alumina or transparent resin as a material of the transparent member 1, it is necessary to determine the thickness of the transparent member 1 in consideration of a difference in transmittance of each material constituting the transparent member 1.
  • quartz or calcite when quartz or calcite is used as the material of the transparent member 1, the distance between the double imaging due to birefringence is related to the thickness of the transparent member 1. It is necessary to determine the thickness of the transparent member 1 in consideration of the pixel interval in the light emitting / receiving area of the element 2.
  • the transparent adhesive 12 is an optically transparent adhesive used when the transparent member 1 is fixed on the light emitting / receiving region of the semiconductor element 2.
  • the material of the transparent adhesive 12 for example, an acrylic resin, or an epoxy resin or a polyimide resin in which a resin is blended so as not to have an absorption band within the wavelength range of visible light can be used.
  • the resin 4 is a light-shielding resin formed so as to cover a portion of the upper surface of the semiconductor element 2 excluding the light emitting / receiving region (that is, the region where the transparent member 1 is formed) and the side surface of the transparent member 1.
  • the upper surface of the resin 4 is flat, and the thickness of the resin 4 on the upper surface of the semiconductor element 2 is approximately the same as that of the transparent member 1.
  • an epoxy resin may be used, or low in order to reduce the thickness of the base material of the semiconductor element 2, improve the thermal shock resistance and moisture resistance of the semiconductor device, and the like.
  • An elastic cured product such as biphenyl resin or silicon resin may be used.
  • the resin 4 when the resin 4 is molded by transfer molding using a molding die, for example, the resin 4 is composed of an epoxy resin and a curing agent which are main materials in a state where the semi-cured powder resin is tableted.
  • a curing accelerator, silica powder as an inorganic filler, flame retardant, carbon black as a pigment, and a release agent are main materials in a state where the semi-cured powder resin is tableted.
  • the selection and blending amount of the inorganic filler and the pigment constituting the resin 4 are important for the warp and light shielding performance of the semiconductor device. Further, in order to reduce the water absorption rate of the curing agent and prevent disconnection failure due to the corrosion of the wiring of the semiconductor element 2, high-purity silica that has been melted to remove crystallinity is processed into spherical shapes of various diameters. Therefore, it is used by properly blending as a curing agent.
  • the pigment is blended as much as possible in the curing agent of the resin 4 within a range in which the electrical resistance in the curing agent of the resin 4 is lowered in a high temperature and high humidity environment and does not induce poor insulation of the semiconductor device.
  • the incident light around the transparent member 1 is prevented from entering the side surface of the transparent member 1 and becoming stray light.
  • carbon black having a high light-shielding color tone as the pigment, a part of incident light from the resin 4 passes through the side surface of the transparent member 1 and the upper surface (main surface) of the semiconductor element 2.
  • 2 (a) to 2 (h) are cross-sectional views showing respective steps of a method for manufacturing a semiconductor device according to an embodiment of the present invention.
  • a plurality of semiconductor elements 2 having a plurality of bonding pads are die-bonded on a substrate 3.
  • the semiconductor elements 2 are arranged in a two-dimensional matrix at a predetermined interval.
  • the transparent member 1 is attached to each semiconductor element 2 in advance via a transparent adhesive 12 on the light emitting / receiving area.
  • each bonding pad on each semiconductor element 2 and a corresponding connection terminal 6 provided on the substrate 3 are electrically connected by a bonding wire 5.
  • the resin 4 that seals the side surface of the transparent member 1, the semiconductor element 2, and the bonding wire 5 while covering the upper surface (main surface) of the transparent member 1 with the release sheet 9. Perform molding.
  • a material of the release sheet 9 for example, a fluororesin is used.
  • a resin 4 is filled in a space between the semiconductor elements 2 arranged in a two-dimensional matrix on the substrate 3 and having the transparent member 1 attached thereto.
  • the upper mold 7 and the lower mold 8 are removed from the resin-sealed substrate 3.
  • FIG. 2F shows a state where the transparent member 1 side is attached to the dicing sheet 13
  • the substrate 3 side die pad side
  • dicing is performed by the dicing blade 11 on the substrate 3 on which the plurality of semiconductor elements 2 are arranged in a two-dimensional matrix.
  • the substrate 3 is divided into pieces for each semiconductor element 2, and a plurality of semiconductor devices can be formed in a lump.
  • each semiconductor device is separated from the dicing sheet 13 and cleaned.
  • a plurality of semiconductor devices can be collectively formed by cutting the substrate 3 and separating it into individual pieces for each semiconductor element 2 after resin sealing. Further, when the resin sealing is performed while clamping the substrate 3 with the release sheet 9 interposed between the surface of the upper mold 7 and the upper surface of the transparent member 1, the lower surface of the semiconductor element 2 is also filled with resin. . Therefore, a force to push upward from the lower surface side of the semiconductor element 2 is applied, the adhesion force between the surface of the upper mold 7 and the upper surface of the transparent member 1 is increased, and the upper surface of the transparent member 1 covered with the release sheet 9 is increased. Becomes difficult for the resin 4 to enter. Therefore, it is possible to realize a semiconductor device with few problems in optical characteristics due to the protrusion of the resin 4 on the upper surface of the transparent member 1 and the lower surface of the substrate 3.
  • the present invention is suitable for a semiconductor device and a manufacturing method thereof, for example, an image sensor such as a mobile phone, a digital camera, a digital video camera, and the manufacturing thereof.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Led Device Packages (AREA)

Abstract

Disclosed is a semiconductor device which comprises: a semiconductor element (2) having a transparent member (1) attached on a light-receiving/emitting area and also having multiple bonding pads; a substrate (3) having a protrusion (10) to which the semiconductor element (2) is die-bonded; multiple connection terminals (6) arranged on the substrate (3); a bonding wire (5) that electrically connect the multiple bonding pads to the corresponding connection terminals (6), respectively; and a resin (4) that covers a side surface of the transparent member (1), the semiconductor element (2) and the bonding wire (5). In the semiconductor device, the surface area of the protrusion (10) in the substrate (3) is smaller than that of the semiconductor element (2).

Description

半導体装置Semiconductor device
　本発明は、受発光素子から構成される半導体装置に関する。 The present invention relates to a semiconductor device including light emitting / receiving elements.
　近年、電子機器の小型化、薄型化及び軽量化と共に、半導体装置の高密度実装化への要求が強くなっている。さらに、微細加工技術の進歩による半導体素子の高集積化に伴って、チップサイズパッケージ又はベアチップの半導体素子を直接実装する、いわゆるチップ実装技術が提案されている。このような動向は、受光素子や発光素子から構成される半導体装置においても同様であり、種々の構成が提案されている。 In recent years, the demand for high-density mounting of semiconductor devices has become stronger along with the reduction in size, thickness and weight of electronic devices. Further, as semiconductor devices are highly integrated due to advances in microfabrication technology, so-called chip mounting technology has been proposed in which chip-size package or bare chip semiconductor devices are directly mounted. Such a trend is the same in a semiconductor device including a light receiving element and a light emitting element, and various configurations have been proposed.
　例えば、特許文献１に、受光素子から構成される半導体素子における受光領域上に透明部材を透明接着剤で直接貼り付けて、小型薄型化を図っている構造が提案されている。 For example, Patent Document 1 proposes a structure in which a transparent member is directly attached to a light receiving region of a semiconductor element including a light receiving element with a transparent adhesive to reduce the size and thickness.
　具体的な構造例としては、受光領域上に透明接着剤を介して透明部材が取り付けられており、且つ複数のボンディングパッドを有する半導体素子が基板上にダイボンドされている。各ボンディングパッドと、基板に設けられた複数の接続端子とはＡｕワイヤーによって電気的に接続されている。透明部材の側面、半導体素子及びＡｕワイヤーは樹脂によって被覆されている。 As a specific structural example, a transparent member is attached to the light receiving region via a transparent adhesive, and a semiconductor element having a plurality of bonding pads is die-bonded on the substrate. Each bonding pad and a plurality of connection terminals provided on the substrate are electrically connected by Au wires. The side surface of the transparent member, the semiconductor element, and the Au wire are covered with a resin.
　また、樹脂封止の方法としては、金型によるモールド成形、印刷、ポッティングなどがあるが、大量生産には、金型によるモールド成形が最も適している。 Also, as a resin sealing method, there are mold forming, printing, potting, etc. by a mold, but mold forming by a mold is most suitable for mass production.
　この構造によれば、従来透明部材を貼り合わせている側壁部のエリアが不要となり小型化が図れると同時に、従来のチップ上から透明部材までの空間がなくなるため、薄型化が図れる。 This structure eliminates the need for the area of the side wall portion where the conventional transparent member is bonded, and can reduce the size, and at the same time eliminates the space from the conventional chip to the transparent member, thereby reducing the thickness.
特開２００６－４１１８３号公報JP 2006-41183 A
　上述した従来の構造においては、金型で樹脂成形する際に、透明部材の上面に封止樹脂がはみ出さないように、金型の上金型部（以下、上金型と言う）の面と透明部材の上面との密着度を高める必要がある。 In the conventional structure described above, the surface of the upper mold portion of the mold (hereinafter referred to as the upper mold) is used so that the sealing resin does not protrude from the upper surface of the transparent member when resin molding is performed with the mold. It is necessary to increase the degree of adhesion between the transparent member and the upper surface of the transparent member.
　ところが、基板上にダイボンドされているチップは、基板の面に対し多少の傾きがあることに加え、チップ上に透明接着剤を介して接着されている透明部材もチップの面に対して多少の傾きがあり、基板の面に対して透明部材の面は多少の傾きがあるため、上金型の面と透明部材の上面とが十分密着しない状態となってしまう。 However, the chip die-bonded on the substrate has a slight inclination with respect to the surface of the substrate, and the transparent member bonded to the chip via a transparent adhesive also has a slight amount with respect to the surface of the chip. Since there is an inclination and the surface of the transparent member is slightly inclined with respect to the surface of the substrate, the surface of the upper mold and the upper surface of the transparent member are not sufficiently adhered.
　その結果、上金型の面と透明部材の上面との隙間から、樹脂が進入し、透明部材の上面へ付着し、光学特性に悪影響を及ぼす問題が生じる。 As a result, the resin enters from the gap between the surface of the upper mold and the upper surface of the transparent member, adheres to the upper surface of the transparent member, and causes a problem that adversely affects the optical characteristics.
　前記に鑑み、本発明は、受発光素子から構成される半導体装置において透明部材の上面への封止樹脂のはみ出しが起こりにくく、それにより、光学特性上の問題が少ない、小型で且つ品質レベルの高い半導体装置およびその製造方法を提供することを目的とする。 In view of the above, the present invention is less likely to cause the sealing resin to protrude from the upper surface of the transparent member in a semiconductor device including light emitting and receiving elements, thereby reducing the problems in optical properties, being small, and having a quality level. It is an object of the present invention to provide a high semiconductor device and a manufacturing method thereof.
　前記の目的を達成するために、本発明の半導体装置は、基板と、前記基板に設けられた突部と、前記突部の上面にダイボンドされており、受光領域および発光領域の少なくともいずれか一方を有し、当該受光領域および発光領域上に透明部材が取り付けられている半導体素子と、前記透明部材の側面、前記半導体素子を被覆する樹脂とを備え、前記突部の上面の面積は、前記半導体素子の下面の面積よりも小さく、前記半導体素子の下面と前記基板との隙間に前記樹脂が充填されている。 In order to achieve the above object, a semiconductor device according to the present invention is die-bonded to a substrate, a protrusion provided on the substrate, and an upper surface of the protrusion, and at least one of a light receiving region and a light emitting region. A semiconductor element having a transparent member attached to the light receiving region and the light emitting region, a side surface of the transparent member, and a resin covering the semiconductor element, and the area of the upper surface of the protrusion is The resin is filled in the gap between the lower surface of the semiconductor element and the substrate, which is smaller than the area of the lower surface of the semiconductor element.
　尚、本発明において、受光領域及び発光領域とは、前記半導体素子においてそれぞれ受光機能及び発光機能を有している領域をいう。 In the present invention, the light receiving region and the light emitting region refer to regions having a light receiving function and a light emitting function, respectively, in the semiconductor element.
　本発明の半導体装置によると、半導体素子がダイボンドされる突部の面積が、半導体素子の面積よりも小さいため、半導体素子の下面と基板との隙間にも樹脂が充填される。 According to the semiconductor device of the present invention, since the area of the protrusion to which the semiconductor element is die-bonded is smaller than the area of the semiconductor element, the gap between the lower surface of the semiconductor element and the substrate is filled with resin.
　このため、樹脂を金型成形する場合において、上金型の面にて透明部材の上面を押さえつつ樹脂を充填する際、半導体素子の下面側の樹脂によって上方向に押し上げる力が生じるため、金型の上面と透明部材の面の密着度が高まり、樹脂が上金型の面と透明部材の上面の隙間から進入して透明部材上面にはみ出す不具合が起こりにくくなる。 For this reason, in the case of resin molding, when filling the resin while pressing the upper surface of the transparent member with the upper mold surface, a force is generated to push upward by the resin on the lower surface side of the semiconductor element. The degree of adhesion between the upper surface of the mold and the surface of the transparent member is increased, and a problem that the resin enters from a gap between the surface of the upper mold and the upper surface of the transparent member and does not protrude from the upper surface of the transparent member is less likely to occur.
　その結果、光学特性上の問題が少ない、小型で且つ信頼性の高い半導体装置を提供することができる。 As a result, it is possible to provide a small and highly reliable semiconductor device with few problems in optical characteristics.
　本発明の半導体装置において、前記突部は、形状、寸法、高さを限定するものではないが、良好な樹脂充填性と十分な下方向からの押し上げの力を得るために、一例として、高さは０．１ｍｍ以上で、面積は透明部材が前記半導体素子上に占める面積より小さいことが望ましい。また、前記突部は、複数の小突部から構成されていてもよい。 In the semiconductor device of the present invention, the protrusions are not limited in shape, size, and height, but in order to obtain good resin filling properties and sufficient push-up force from the lower direction, The thickness is preferably 0.1 mm or more, and the area is preferably smaller than the area occupied by the transparent member on the semiconductor element. Further, the protrusion may be composed of a plurality of small protrusions.
　本発明の半導体装置によれば、半導体素子を、基板に設けられた半導体素子よりも小さい突部にダイボンドするので、半導体素子の下面と基板との隙間にも樹脂が充填される。 According to the semiconductor device of the present invention, since the semiconductor element is die-bonded to a protrusion that is smaller than the semiconductor element provided on the substrate, the resin is also filled in the gap between the lower surface of the semiconductor element and the substrate.
　このため、樹脂を金型成形する場合において、金型の上金型の面にて透明部材の上面を押さえつつ樹脂を充填する際、半導体素子の下面側の樹脂によって上方向に押し上げる力が生じるため、金型の上面と透明部材の面の密着度が高まり、樹脂が上金型の面と透明部材の上面の隙間から進入して透明部材上面にはみ出す不具合が起こりにくくなる。 For this reason, when resin is molded, when the resin is filled while pressing the upper surface of the transparent member with the upper mold surface of the mold, a force is generated to push upward by the resin on the lower surface side of the semiconductor element. For this reason, the degree of adhesion between the upper surface of the mold and the surface of the transparent member is increased, and the problem that the resin enters from the gap between the surface of the upper mold and the upper surface of the transparent member is less likely to protrude to the upper surface of the transparent member.
　その結果、光学特性上の問題が少ない、小型で且つ品質レベルの高い半導体装置を提供することができる。 As a result, it is possible to provide a small-sized and high quality semiconductor device with few problems in optical characteristics.
図１（ａ）～（ｃ）は、本発明の実施形態の半導体装置の断面図及び裏面平面図である。1A to 1C are a cross-sectional view and a back plan view of a semiconductor device according to an embodiment of the present invention. 図２（ａ）～（ｈ）は、本発明の実施形態の半導体装置の製造方法の各工程を示す断面図である。2A to 2H are cross-sectional views showing respective steps of the method for manufacturing a semiconductor device according to the embodiment of the present invention.
　以下、本発明を実施するための形態について、図面を参照しながら説明する。尚、これらの参照図面において、各構成部材の厚さや長さ等は、分かりやすさや図面作成上の観点から実際の寸法とは異なっている。また、各構成部材、例えば電極や端子等の個数も実際とは異なっており、図示しやすい個数としている。さらに、各構成部材の材質等については、以下に説明する材質等に限定されるものではない。 Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings. In these reference drawings, the thickness, length, etc. of each component are different from the actual dimensions from the viewpoint of easy understanding and drawing creation. In addition, the number of components, such as electrodes and terminals, is different from the actual number and is easy to show. Furthermore, the material of each constituent member is not limited to the material described below.
　図１（ａ）は、本発明の実施形態に係る半導体装置の１つの態様における断面図及び裏面平面図である。図１（ａ）に示すように、本実施形態の半導体装置において、受発光領域を有する半導体素子２が基板３の突部１０上にダイボンドされている。半導体素子２は、受発光領域上に透明接着剤１２を介して透明部材１が取り付けられており、且つ複数のボンディングパッド（図示せず）を有している。 FIG. 1A is a cross-sectional view and a back plan view of one embodiment of a semiconductor device according to an embodiment of the present invention. As shown in FIG. 1A, in the semiconductor device of this embodiment, a semiconductor element 2 having a light emitting / receiving region is die-bonded on a protrusion 10 of a substrate 3. The semiconductor element 2 has the transparent member 1 attached to the light emitting / receiving area via the transparent adhesive 12 and has a plurality of bonding pads (not shown).
　各ボンディングパッドと、基板３に設けられた複数の接続端子６とは、ボンディングワイヤー５によって電気的に接続されている。透明部材１の側面、半導体素子２及びボンディングワイヤー５は樹脂４によって被覆されている。尚、透明部材１の上面は樹脂４から露出している。 Each bonding pad and a plurality of connection terminals 6 provided on the substrate 3 are electrically connected by a bonding wire 5. The side surface of the transparent member 1, the semiconductor element 2, and the bonding wire 5 are covered with a resin 4. The upper surface of the transparent member 1 is exposed from the resin 4.
　本実施形態に係る半導体装置の特徴は、半導体素子２がダイボンドされる基板３の突部１０の面積が、半導体素子２の下面の面積よりも小さい点である。 The feature of the semiconductor device according to the present embodiment is that the area of the protrusion 10 of the substrate 3 to which the semiconductor element 2 is die-bonded is smaller than the area of the lower surface of the semiconductor element 2.
　本実施形態によると、半導体素子２がダイボンドされる基板３の突部１０の面積が、半導体素子２の下面の面積よりも小さいため、半導体素子２の下面側にも樹脂が充填される。樹脂４を金型成形する場合において、上金型（図示せず）の面にて透明部材１の上面を押さえつつ樹脂を充填する際、半導体素子２の下面側に充填された樹脂４によって半導体素子２を上方向に押し上げる力が生じるため、上金型の面と透明部材の上面の密着度が高まる。 According to this embodiment, since the area of the protrusion 10 of the substrate 3 to which the semiconductor element 2 is die-bonded is smaller than the area of the lower surface of the semiconductor element 2, the lower surface side of the semiconductor element 2 is also filled with resin. When the resin 4 is molded, when the resin is filled while pressing the upper surface of the transparent member 1 with the surface of the upper mold (not shown), the semiconductor 4 is filled with the resin 4 filled on the lower surface side of the semiconductor element 2. Since a force for pushing the element 2 upward is generated, the degree of adhesion between the upper mold surface and the upper surface of the transparent member is increased.
　その結果、樹脂４が上金型の面と透明部材１の上面の間から進入し、透明部材１の上面にはみ出す不具合が軽減される。それにより、光学特性上の問題が防止された、小型で且つ信頼性の高い半導体装置を提供することができる。 As a result, the problem that the resin 4 enters between the upper mold surface and the upper surface of the transparent member 1 and protrudes to the upper surface of the transparent member 1 is reduced. Thus, a small and highly reliable semiconductor device in which problems in optical characteristics are prevented can be provided.
　尚、本実施形態において、突部１０の上面の形状は図１（ａ）に示すような矩形に限らず、例えば、図１（ｂ）に示すような円形であってもよい。また、図１（ｃ）に示すように、突部１０が複数の小突部から構成されていてもよい。 In the present embodiment, the shape of the upper surface of the protrusion 10 is not limited to the rectangle as shown in FIG. 1A, and may be a circle as shown in FIG. 1B, for example. Moreover, as shown in FIG.1 (c), the protrusion 10 may be comprised from the several small protrusion.
　また、突部１０の高さは、０．１ｍｍ以上であり、面積は、透明部材１の面積より小さいことが望ましい。これにより、良好な樹脂充填性と半導体素子２の下面側から上方向への十分な押し上げの力を得ることができる。 The height of the protrusion 10 is preferably 0.1 mm or more, and the area is preferably smaller than the area of the transparent member 1. Thereby, it is possible to obtain a good resin filling property and a sufficient pushing force from the lower surface side of the semiconductor element 2 upward.
　また、突部１０は、基板３をエッチングすることで形成してもよく、また、基板３に樹脂部材または金属部材を接着することで形成してもよい。 The protrusion 10 may be formed by etching the substrate 3 or may be formed by adhering a resin member or a metal member to the substrate 3.
　また、本実施形態において、半導体素子２の基材の材料としては、例えばシリコンを用いてもよく、半導体レーザーや発光ダイオード等へ適用する場合には、例えばＩＩＩ－Ｖ族化合物やＩＩ－ＶＩ族化合物等を用いてもよい。 In the present embodiment, the material of the base material of the semiconductor element 2 may be, for example, silicon. When applied to a semiconductor laser, a light emitting diode, or the like, for example, a III-V group compound or a II-VI group A compound or the like may be used.
　また、本実施形態において、透明部材１は、半導体素子２の受発光領域の全面を覆うことができる大きさを有している。また、透明部材１の上面及び下面は互いに平行な光学的平面に加工されていると共に、透明部材１の側面は上下両面に対して垂直な平面になっている。なお、一部の稜線もしくはコーナーが面取りやＲ加工されていてもよい。 In the present embodiment, the transparent member 1 has a size that can cover the entire surface of the light receiving and emitting region of the semiconductor element 2. Moreover, while the upper surface and lower surface of the transparent member 1 are processed into the mutually parallel optical plane, the side surface of the transparent member 1 is a plane perpendicular | vertical with respect to upper and lower surfaces. Note that some ridgelines or corners may be chamfered or rounded.
　また、本実施形態において、透明部材１の材料としては、例えば硼珪酸ガラス板を用いてもよいし、又は、特定方向の干渉縞によるモアレを防止するために、複屈折特性を持つ水晶板若しくは方解石板からなるローパスフィルタを用いてもよい。 In the present embodiment, the material of the transparent member 1 may be, for example, a borosilicate glass plate, or a quartz plate having birefringence characteristics in order to prevent moiré due to interference fringes in a specific direction or A low-pass filter made of calcite board may be used.
　また、透明部材１の材料としては、赤外線カットフィルタの両側に複屈折特性が直交するように石英板若しくは方解石板を貼り合わせたローパスフィルタを用いてもよいし、又は、透明なエポキシ系樹脂板、透明なアクリル系樹脂板若しくは透明アルミナ板を用いてもよい。 The material of the transparent member 1 may be a low-pass filter in which a quartz plate or a calcite plate is bonded to both sides of the infrared cut filter so that the birefringence characteristics are orthogonal to each other, or a transparent epoxy resin plate A transparent acrylic resin plate or a transparent alumina plate may be used.
　ここで、透明部材１の材料として、硼珪酸ガラス板を用いる場合、透明部材１の厚さを２００μｍから１０００μｍまでの範囲、好ましくは３００μｍから７００μｍまでの範囲に設定する。 Here, when a borosilicate glass plate is used as the material of the transparent member 1, the thickness of the transparent member 1 is set in the range of 200 μm to 1000 μm, preferably in the range of 300 μm to 700 μm.
　透明部材１の厚さの下限を２００μｍに設定する理由は、透明部材１、透明接着剤１２、樹脂４、半導体素子２等から構成される半導体装置の実装時の取り付け高さを５００μｍ以下にして小型薄型化を実現するためである。また、透明部材１の厚さの上限を１０００μｍに設定する理由は、波長が５００ｎｍの入射光に対して９０％以上の透過率を実現するためである。 The reason why the lower limit of the thickness of the transparent member 1 is set to 200 μm is that the mounting height at the time of mounting the semiconductor device composed of the transparent member 1, the transparent adhesive 12, the resin 4, the semiconductor element 2, etc. is set to 500 μm or less. This is for realizing a small size and a thin shape. The reason why the upper limit of the thickness of the transparent member 1 is set to 1000 μm is to realize a transmittance of 90% or more for incident light having a wavelength of 500 nm.
　さらに、透明部材１の厚さの好ましい範囲を３００μｍから７００μｍまでの範囲に設定する理由は、現行の製造技術を用いて最も安定した半導体装置の生産を可能にすると共に構成部材として廉価な汎用品を用いて安価且つ小型薄型の半導体装置を実現するためである。 Further, the reason why the preferable range of the thickness of the transparent member 1 is set to a range from 300 μm to 700 μm is that the most stable semiconductor device can be produced by using the current manufacturing technology, and a low-cost general-purpose product as a constituent member This is because an inexpensive, small and thin semiconductor device is realized by using the above.
　尚、透明部材１の材料として、透明アルミナ又は透明樹脂を使用する場合、透明部材１を構成する各材料が有する透過率の違いを考慮して透明部材１の厚さを決定する必要がある。また、透明部材１の材料として、水晶又は方解石を使用する場合、複屈折による２重結像の間隔が透明部材１の厚さに関係するため、各材料の透過率の違いに加えて、半導体素子２の受発光領域における画素間隔を考慮して透明部材１の厚さを決定する必要がある。 In addition, when using a transparent alumina or transparent resin as a material of the transparent member 1, it is necessary to determine the thickness of the transparent member 1 in consideration of a difference in transmittance of each material constituting the transparent member 1. In addition, when quartz or calcite is used as the material of the transparent member 1, the distance between the double imaging due to birefringence is related to the thickness of the transparent member 1. It is necessary to determine the thickness of the transparent member 1 in consideration of the pixel interval in the light emitting / receiving area of the element 2.
　また、本実施形態において、透明接着剤１２は、半導体素子２の受発光領域上に透明部材１を固着する際に用いる光学的に透明な接着剤である。この透明接着剤１２の材料としては、例えばアクリル系樹脂、又は、可視光の波長範囲内に吸収帯域を持たないように樹脂配合がなされたエポキシ系樹脂若しくはポリイミド系樹脂を用いることができる。 In the present embodiment, the transparent adhesive 12 is an optically transparent adhesive used when the transparent member 1 is fixed on the light emitting / receiving region of the semiconductor element 2. As the material of the transparent adhesive 12, for example, an acrylic resin, or an epoxy resin or a polyimide resin in which a resin is blended so as not to have an absorption band within the wavelength range of visible light can be used.
　また、本実施形態において、樹脂４は、半導体素子２の上面における受発光領域（つまり透明部材１の形成領域）を除く部分と透明部材１の側面とを覆うように形成された遮光性の樹脂であって、樹脂４の上面は平坦であり、樹脂４の半導体素子２の上面における厚さは透明部材１とほぼ同程度の厚さである。 In the present embodiment, the resin 4 is a light-shielding resin formed so as to cover a portion of the upper surface of the semiconductor element 2 excluding the light emitting / receiving region (that is, the region where the transparent member 1 is formed) and the side surface of the transparent member 1. The upper surface of the resin 4 is flat, and the thickness of the resin 4 on the upper surface of the semiconductor element 2 is approximately the same as that of the transparent member 1.
　また、樹脂４の材料としては、エポキシ系樹脂を用いてもよいし、又は、半導体素子２の基材の薄型化、半導体装置としての熱衝撃耐性や耐湿性の向上等を図るために、低弾性硬化物、例えばビフェニル系樹脂やシリコン系樹脂を用いてもよい。 In addition, as the material of the resin 4, an epoxy resin may be used, or low in order to reduce the thickness of the base material of the semiconductor element 2, improve the thermal shock resistance and moisture resistance of the semiconductor device, and the like. An elastic cured product such as biphenyl resin or silicon resin may be used.
　具体的な樹脂４の配合組成は、例えば成形金型を用いてトランスファーモールドにより樹脂４が成形される場合、半硬化状粉末樹脂がタブレット化された状態の主材であるエポキシ系樹脂、硬化剤、硬化促進剤、無機充填材であるシリカ粉末、難燃材、顔料であるカーボンブラック、及び離型剤から構成される。 For example, when the resin 4 is molded by transfer molding using a molding die, for example, the resin 4 is composed of an epoxy resin and a curing agent which are main materials in a state where the semi-cured powder resin is tableted. , A curing accelerator, silica powder as an inorganic filler, flame retardant, carbon black as a pigment, and a release agent.
　特に、本実施形態の半導体装置において、樹脂４を構成する無機充填材及び顔料の選定及び配合量は、半導体装置の反りや遮光性能にとって重要である。また、硬化剤の吸水率を低くして半導体素子２の配線の腐食に起因する断線不良を防止するために、溶融して結晶性を取り除いた高純度のシリカを種々の直径の球状に加工して、硬化剤として適正に配合して用いる。 In particular, in the semiconductor device of the present embodiment, the selection and blending amount of the inorganic filler and the pigment constituting the resin 4 are important for the warp and light shielding performance of the semiconductor device. Further, in order to reduce the water absorption rate of the curing agent and prevent disconnection failure due to the corrosion of the wiring of the semiconductor element 2, high-purity silica that has been melted to remove crystallinity is processed into spherical shapes of various diameters. Therefore, it is used by properly blending as a curing agent.
　また、顔料については、高温多湿環境中で樹脂４の硬化剤中の電気抵抗が下がって半導体装置の絶縁不良を誘発しない範囲で樹脂４の硬化剤中に可能な限り多く配合し、それにより、透明部材１周辺の入射光が透明部材１の側面から進入して迷光となる事態を阻止する。具体的には、顔料として、例えば遮光性の高い色調を持つカーボンブラックを用いることにより、樹脂４上からの入射光の一部が透明部材１の側面を通って半導体素子２の上面（主面）上の受動素子又は能動素子のｐｎ接合部若しくはゲート部に到達する事態を阻止し、それによって、半導体素子２の誤動作を防止する。ここで、顔料として、配合量を高くすることができる粒径や低分極性を持つ材料を選択することが重要である。 In addition, the pigment is blended as much as possible in the curing agent of the resin 4 within a range in which the electrical resistance in the curing agent of the resin 4 is lowered in a high temperature and high humidity environment and does not induce poor insulation of the semiconductor device. The incident light around the transparent member 1 is prevented from entering the side surface of the transparent member 1 and becoming stray light. Specifically, by using, for example, carbon black having a high light-shielding color tone as the pigment, a part of incident light from the resin 4 passes through the side surface of the transparent member 1 and the upper surface (main surface) of the semiconductor element 2. ) To prevent the passive element or the active element from reaching the pn junction or the gate, thereby preventing the semiconductor element 2 from malfunctioning. Here, it is important to select a material having a particle size and low polarizability that can increase the amount of the pigment as the pigment.
　次に本発明の実施形態に係る半導体装置の製造方法について説明する。 Next, a method for manufacturing a semiconductor device according to an embodiment of the present invention will be described.
　図２（ａ）～図２（ｈ）は、本発明の実施形態に係る半導体装置の製造方法の各工程を示す断面図である。 2 (a) to 2 (h) are cross-sectional views showing respective steps of a method for manufacturing a semiconductor device according to an embodiment of the present invention.
　まず、図２（ａ）に示すように、複数のボンディングパッドを有する複数の半導体素子２を基板３上にダイボンドする。各半導体素子２は、互いに所定間隔をあけて２次元行列状に配置される。各半導体素子２には、予め、受発光領域上に透明接着剤１２を介して透明部材１が取り付けられている。 First, as shown in FIG. 2A, a plurality of semiconductor elements 2 having a plurality of bonding pads are die-bonded on a substrate 3. The semiconductor elements 2 are arranged in a two-dimensional matrix at a predetermined interval. The transparent member 1 is attached to each semiconductor element 2 in advance via a transparent adhesive 12 on the light emitting / receiving area.
　次に、図２（ｂ）に示すように、各半導体素子２上の各ボンディングパッドと、基板３に設けられた対応する接続端子６とをボンディングワイヤー５によって電気的に接続する。 Next, as shown in FIG. 2 (b), each bonding pad on each semiconductor element 2 and a corresponding connection terminal 6 provided on the substrate 3 are electrically connected by a bonding wire 5.
　次に、図２（ｃ）に示すように、上金型７の面と透明部材１の上面との間にリリースシート９を介在させて、複数の半導体素子２がダイボンドされた基板３を、上金型７と下金型８とでクランプする。 Next, as shown in FIG. 2 (c), a substrate 3 on which a plurality of semiconductor elements 2 are die-bonded with a release sheet 9 interposed between the surface of the upper mold 7 and the upper surface of the transparent member 1, Clamp with the upper mold 7 and the lower mold 8.
　続いて、図２（ｄ）に示すように、透明部材１の上面（主面）をリリースシート９によって覆いながら、透明部材１の側面、半導体素子２及びボンディングワイヤー５を封止する樹脂４の成形を行う。リリースシート９の材質としては、例えばフッ素樹脂等が用いられる。ここで、基板３上に２次元行列状に配置され且つそれぞれ透明部材１が取り付けられている半導体素子２同士の間の空間に樹脂４が充填される。 Subsequently, as shown in FIG. 2D, the resin 4 that seals the side surface of the transparent member 1, the semiconductor element 2, and the bonding wire 5 while covering the upper surface (main surface) of the transparent member 1 with the release sheet 9. Perform molding. As a material of the release sheet 9, for example, a fluororesin is used. Here, a resin 4 is filled in a space between the semiconductor elements 2 arranged in a two-dimensional matrix on the substrate 3 and having the transparent member 1 attached thereto.
　次に、図２（ｅ）に示すように、樹脂封止された基板３から上金型７及び下金型８を取り外す。 Next, as shown in FIG. 2E, the upper mold 7 and the lower mold 8 are removed from the resin-sealed substrate 3.
　その後、図２（ｆ）に示すように、樹脂封止された基板３をダイシングシート１３に貼り付ける。図２（ｆ）では、透明部材１側をダイシングシート１３に貼り付けている様子を示しているが、基板３側（ダイパッド側）をダイシングシートに貼り付けてもよい。続いて、複数の半導体素子２が２次元行列状に配置された基板３に対してダイシングブレード１１によりダイシングを行う。 Thereafter, as shown in FIG. 2F, the resin-sealed substrate 3 is attached to the dicing sheet 13. Although FIG. 2 (f) shows a state where the transparent member 1 side is attached to the dicing sheet 13, the substrate 3 side (die pad side) may be attached to the dicing sheet. Subsequently, dicing is performed by the dicing blade 11 on the substrate 3 on which the plurality of semiconductor elements 2 are arranged in a two-dimensional matrix.
　これにより、図２（ｇ）に示すように、基板３は半導体素子２毎に個片化され、複数の半導体装置を一括して形成することができる。 Thereby, as shown in FIG. 2G, the substrate 3 is divided into pieces for each semiconductor element 2, and a plurality of semiconductor devices can be formed in a lump.
　最後に、図２（ｈ）に示すように、ダイシングシート１３から各半導体装置を切り離して洗浄を行う。 Finally, as shown in FIG. 2 (h), each semiconductor device is separated from the dicing sheet 13 and cleaned.
　本実施形態の製造方法によると、樹脂封止を行った後、基板３を切断して半導体素子２毎に個片化することにより、半導体装置を一括して複数形成することができる。また、上金型７の面と透明部材１の上面との間にリリースシート９を介在させて基板３をクランプしながら樹脂封止を行う際に半導体素子２の下面にも樹脂が充填される。そのため、半導体素子２の下面側から上方向に押し上げる力が加わり、上金型７の面と透明部材１の上面との密着力が高まり、リリースシート９に覆われている透明部材１の上面には樹脂４が進入しにくくなる。従って、透明部材１の上面や基板３の下面への樹脂４のはみ出しによる光学特性上の問題が少ない半導体装置を実現することができる。 According to the manufacturing method of the present embodiment, a plurality of semiconductor devices can be collectively formed by cutting the substrate 3 and separating it into individual pieces for each semiconductor element 2 after resin sealing. Further, when the resin sealing is performed while clamping the substrate 3 with the release sheet 9 interposed between the surface of the upper mold 7 and the upper surface of the transparent member 1, the lower surface of the semiconductor element 2 is also filled with resin. . Therefore, a force to push upward from the lower surface side of the semiconductor element 2 is applied, the adhesion force between the surface of the upper mold 7 and the upper surface of the transparent member 1 is increased, and the upper surface of the transparent member 1 covered with the release sheet 9 is increased. Becomes difficult for the resin 4 to enter. Therefore, it is possible to realize a semiconductor device with few problems in optical characteristics due to the protrusion of the resin 4 on the upper surface of the transparent member 1 and the lower surface of the substrate 3.
　本発明は半導体装置及びその製造方法は、例えば携帯電話やデジタルカメラ、デジタルビデオカメラ等のイメージセンサ及びその製造に好適である。 The present invention is suitable for a semiconductor device and a manufacturing method thereof, for example, an image sensor such as a mobile phone, a digital camera, a digital video camera, and the manufacturing thereof.
　　１　透明部材
　　２　半導体素子
　　３　基板
　　４　樹脂
　　５　ボンディングワイヤー
　　６　接続端子
　　７　上金型
　　８　下金型
　　９　リリースシート
　１０　突部
　１１　ダイシングブレード
　１２　透明接着剤
　１３　ダイシングシート DESCRIPTION OF SYMBOLS 1 Transparent member 2 Semiconductor element 3 Board | substrate 4 Resin 5 Bonding wire 6 Connection terminal 7 Upper die 8 Lower die 9 Release sheet 10 Protrusion part 11 Dicing blade 12 Transparent adhesive 13 Dicing sheet

Claims (4)

  1. 　基板と、
    　前記基板に設けられた突部と、
    　前記突部の上面にダイボンドされており、受光領域および発光領域の少なくともいずれか一方を有し、当該受光領域および発光領域上に透明部材が取り付けられている半導体素子と、
    　前記透明部材の側面、前記半導体素子を被覆する樹脂と
    　を備え、
    　前記突部の上面の面積が、前記半導体素子の下面の面積よりも小さく、前記半導体素子の下面と前記基板との隙間に前記樹脂が充填されている
    　ことを特徴とする半導体装置。     A substrate,
    A protrusion provided on the substrate;
    A semiconductor element that is die-bonded to the upper surface of the protrusion, has at least one of a light receiving region and a light emitting region, and a transparent member is mounted on the light receiving region and the light emitting region;
    A side surface of the transparent member, and a resin covering the semiconductor element,
    The area of the upper surface of the protrusion is smaller than the area of the lower surface of the semiconductor element, and the gap between the lower surface of the semiconductor element and the substrate is filled with the resin.
  2. 　前記突部の上面の面積は、前記透明部材が前記半導体素子上に占める面積より小さい
    　ことを特徴とする請求項１に記載の半導体装置。     The semiconductor device according to claim 1, wherein an area of an upper surface of the protrusion is smaller than an area occupied by the transparent member on the semiconductor element.
  3. 　前記突部が、複数の小突部で構成されている
    　ことを特徴とする請求項１に記載の半導体装置。     The semiconductor device according to claim 1, wherein the protrusion includes a plurality of small protrusions.
  4. 　前記樹脂が、遮光性をもった樹脂である
    　ことを特徴とする請求項１～３のいずれか１項に記載の半導体装置。     The semiconductor device according to any one of claims 1 to 3, wherein the resin is a light-shielding resin.
PCT/JP2010/003752 2009-06-08 2010-06-04 Semiconductor device WO2010143389A1 (en)

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Citations (4)

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Publication number Priority date Publication date Assignee Title
JP2006179718A (en) * 2004-12-22 2006-07-06 Sony Corp Blue optical-element package and manufacturing method for optical-element package
JP2007123481A (en) * 2005-10-27 2007-05-17 Kyocera Corp Light emitting device and wiring board for light emitting element
JP2008047834A (en) * 2006-08-21 2008-02-28 Hamamatsu Photonics Kk Semiconductor device and manufacturing method of semiconductor device
JP2008192710A (en) * 2007-02-01 2008-08-21 Nichia Chem Ind Ltd Semiconductor light-emitting element

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006179718A (en) * 2004-12-22 2006-07-06 Sony Corp Blue optical-element package and manufacturing method for optical-element package
JP2007123481A (en) * 2005-10-27 2007-05-17 Kyocera Corp Light emitting device and wiring board for light emitting element
JP2008047834A (en) * 2006-08-21 2008-02-28 Hamamatsu Photonics Kk Semiconductor device and manufacturing method of semiconductor device
JP2008192710A (en) * 2007-02-01 2008-08-21 Nichia Chem Ind Ltd Semiconductor light-emitting element

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