WO2010143093A1 - Efficient light emitting device and method for manufacturing such a device - Google Patents
Efficient light emitting device and method for manufacturing such a device Download PDFInfo
- Publication number
- WO2010143093A1 WO2010143093A1 PCT/IB2010/052365 IB2010052365W WO2010143093A1 WO 2010143093 A1 WO2010143093 A1 WO 2010143093A1 IB 2010052365 W IB2010052365 W IB 2010052365W WO 2010143093 A1 WO2010143093 A1 WO 2010143093A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light
- emitting device
- primary
- light emitting
- primary light
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000000034 method Methods 0.000 title claims description 7
- 230000003287 optical effect Effects 0.000 claims abstract description 31
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000005286 illumination Methods 0.000 claims description 13
- 230000005540 biological transmission Effects 0.000 claims description 2
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 238000007493 shaping process Methods 0.000 claims 1
- 239000002210 silicon-based material Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 8
- 238000010521 absorption reaction Methods 0.000 abstract description 7
- 239000000463 material Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920013617 polymethylmethyacrylimide Polymers 0.000 description 1
Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V5/00—Refractors for light sources
- F21V5/04—Refractors for light sources of lens shape
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V5/00—Refractors for light sources
- F21V5/10—Refractors for light sources comprising photoluminescent material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49826—Assembling or joining
Definitions
- the invention relates to the field of light emitting devices and methods for manufacturing such devices. Such devices may e.g. be used for illumination applications. More specifically, the invention relates to improving the efficacy of light emitting devices, wherein light of a primary light source is converted to secondary light by using a light converting medium.
- Solid state light sources comprising e.g. light emitting diodes (LED)
- LED light emitting diodes
- the illumination devices for such applications are required to provide white light.
- One approach to obtain such illumination devices is to convert at least a part of the primary light of the solid state light sources to secondary light using phosphor species.
- White light may be obtained by partial conversion of a blue light with a wavelength converting material comprising such a phosphor.
- the blue light emitted e.g. by a light emitting diode (LED) is partially absorbed by the phosphor, causing the phosphor to emit light of a different color, e.g. a yellow light.
- the blue light emitted by the LED is mixed with the yellow light emitted by the phosphor, and the viewer perceives the resulting mixture of the blue and yellow light as a white light.
- LED light emitting diode
- the phosphor species emit the secondary light (e.g. the yellow light) with an isotropic light distribution pattern (i.e. the secondary light is emitted over a solid angle of 4pi). Therefore, at least a part of the secondary light is emitted back in the direction of the primary light source and may be absorbed, thereby reducing the efficacy of the light emitting device.
- the absorption of the secondary light may be as high as 50%.
- US 2009/0001399 discloses a method for increasing the luminous efficacy of a white light emitting diode using a LED die and a phosphor. Primary light is emitted by the LED die and converted to secondary light by the phosphor.
- At least one additional layer or material is provided between the LED die and the phosphor that is transparent for the primary light from the LED die and reflective for the secondary light of the phosphor.
- the additional layer or material may reduce the absorption of the secondary light.
- the transparency and the reflectivity of the additional layer or material for the primary light and secondary light, respectively, are not optimal. Therefore, the efficacy of the light emitting device can still be further improved.
- a light emitting device comprising a primary light source, a light converting medium and an optical structure.
- the primary light source arranged for emitting primary light, is disposed in a first plane (defined by e.g. a carrier for the primary light source).
- the light converting medium is arranged for converting at least a part of the primary light to secondary light of a wavelength different from the wavelength of the primary light.
- the light converting medium is disposed in a second plane at a distance from the primary light source.
- the optical structure is arranged for receiving a part of the secondary light from the light converting medium and is configured for redirecting the part of the secondary light in a direction towards the first plane and away from the primary light source to enable transmission of the secondary light.
- An illumination device for illuminating an area or a room comprising such a light emitting device is also disclosed.
- a method for manufacturing a light emitting device is also disclosed.
- the manufacturing steps include providing a primary light source on a carrier for providing primary light and disposing a light converting medium at a distance from the primary light source.
- the light converting medium is capable of converting at least a part of the primary light to secondary light of a wavelength different from the wavelength of the primary light.
- An optical structure is provided that faces the primary light source. The optical structure is arranged for receiving a part of the secondary light from the light converting medium and for redirecting the part of the secondary light in a direction towards the carrier and away from the primary light source.
- an optical structure configured for redirecting the secondary light away from the primary light source
- absorption of the secondary light by the primary light source can be substantially reduced or eliminated without requiring an intermediate layer or material.
- the structural variation of a part of the light emitting device provides for the redirection of the secondary light away from the primary light source.
- the luminous efficacy may be improved by redirecting this secondary light in a direction such that it is transmitted from the light emitting device either directly or indirectly, i.e. via a further redirecting structure.
- An example of an optical structure would be a Fresnel lens type structure.
- first plane and second plane may comprise e.g. a curved plane.
- An example of a second non-planar plane is provided by the dome-shaped light conversion material that will be further described below.
- claims 2, 3 and 14 provide for an effective optical structure that enables redirection of the part of the secondary light, while being substantially independent of considerations for this structure regarding transparency for primary light and reflectivity for the part of the secondary light.
- the embodiment of claim 4 is beneficial from a manufacturing point.
- the optical structure may be formed in the light converting medium.
- the embodiment of claim 5 is advantageous in that the primary light is effectively intercepted by the component comprising the light converting medium.
- the embodiment of claim 6 is beneficial in that the optical path for the primary light in the light converting medium is substantially identical for all emitting angles thereby allowing equal generation of the secondary light over the component.
- the embodiment of claim 7 provides for materials of the components that can relatively easily and economically efficiently be shaped to provide the optical structure.
- the embodiment of claim 8 provides the advantage of further reducing the amount of light towards the primary light source, therefore reducing absorption losses.
- claims 9 and 10 provide means for further redirection of the redirected part of the secondary light for increasing the efficacy of the light emitting device.
- the reflectivity of the reflective part is at least 95%.
- WO 2008/060586 discloses an embodiment of a remote phosphor light emitting device wherein the phosphor layer has been roughened on an interface towards the primary light source.
- the roughened phosphor layer is intended to improve the conversion efficiency of the phosphor layer by reducing the reflection of the primary light, i.e. not to (re)-direct the secondary light.
- the roughened phosphor layer would again provide a Lambertian light distribution of secondary light, such that a significant amount of this secondary light would still hit the primary light source.
- FIG. 1 provides a schematic illustration of an illumination device comprising a light emitting device according to an embodiment of the invention
- FIG. 2 provides a schematic illustration of a top view of a light emitting device according to an embodiment of the invention
- FIGS. 3 A and 3B provide schematic illustrations of a cross-section of the light emitting device of FIG. 2 along III-III;
- FIGS. 4 A and 4B provide alternative embodiments of light emitting devices.
- FIG. 1 is a schematic illustration of an illumination device 1 configured for an illumination application, e.g. for illuminating an area or space.
- the illumination device 1 comprises a light emitting device 2 and reflective surfaces 3, such as dichroic mirrors or reflectors.
- the diameter D of the light emitting device 2 is preferably small, approximating a point source.
- FIG. 2 provides a top view of the light emitting device 2 of the illumination device 1.
- FIGS. 3A and 3B are cross-sections along line III-III in FIG. 2.
- the light emitting device 2 comprises a primary light source 10 provided on a substrate 11.
- the primary light source 10 may comprise one or more light emitting diodes arranged to allow current to be conveyed through these diodes.
- the diodes emit primary light I of a first wavelength (e.g. blue light in the wavelength range of 360 nm to 480 nm, e.g. 460 nm).
- a first wavelength e.g. blue light in the wavelength range of 360 nm to 480 nm, e.g. 460 nm.
- the diodes do not necessarily all emit primary light of a single wavelength.
- Hybrid solutions can be envisaged wherein some diodes emit light of a first wavelength (e.g. blue light) and other diodes emit light of a different wavelength (e.g. red light).
- An encapsulating material may be provided over the diode(s), e.g. silicon, to enhance out coupling of the primary light from the diode(s
- the light emitting device 2 has a so-called remote phosphor configuration, wherein a component 13 containing phosphor substances 14 is disposed at a distance from the primary light source 10.
- the primary light source 10 is located in a first plane, whereas the phosphor substances are defined in a second (curved) plane remote from the first plane.
- a typical distance between the primary light source 10 and the component 13 is between 1 and 10 mm.
- the phosphors 14 are known for their capability as a light converting medium, i.e. to convert at least a part of the primary light I of the light emitting diodes of a first wavelength to secondary light II of a second wavelength being different from the first wavelength.
- blue primary light may be partially converted to yellow light.
- the combination of the blue and yellow light provides for a white luminance W for an observer.
- Different conversions i.e. second wavelengths
- a plurality of different phosphors may be selected that convert the primary light I into secondary light II of different wavelength that mix to provide a white luminance W.
- off-white luminance may also be obtained, depending on the types of phosphors and the primary light.
- the component 13 has a dome shaped configuration, wherein the primary light source 10 is disposed in the centre of the dome.
- a dome-shaped component 13 provides for an equal optical path for primary light I in the component 13, irrespective of the radial direction.
- the dome 13 may define an air chamber 15, such as to obtain a considerable difference between the refraction index of the dome 13 and the air chamber 15.
- the chamber 15 may also be filled with a substance having an appropriate difference in the refraction index as compared to the dome 13.
- the phosphors 14 emit the secondary light II evenly in all directions.
- a part of the emitted secondary light II will unavoidably be directed back into the direction of the primary light source 10 instead of to the outside. Without taking any measures, a considerable part of this secondary light II would be absorbed by the primary light source 10, thereby reducing the efficacy of the light emitting device 2. The absorption of the part of the secondary light II would be greater for smaller light emitting sources as a result of the larger relative area of the primary light source 10.
- FIGS. 3 A and 3B The purpose of the embodiment of FIGS. 3 A and 3B is to substantially prevent that the part of the secondary light that is emitted back into the light emitting device 2 will be absorbed by the primary light source 10.
- an optical structure 16 is integrally formed in the component 13.
- the optical structure 16 is arranged for receiving a part of the secondary light II from the phosphors 14, as shown in FIG. 3B, and is shaped for redirecting the part of the secondary light in a direction towards the substrate 11 but away from the primary light source 10. Therefore, absorption of the part of the secondary light II by the primary light source 10 can be substantially prevented.
- the optical structure 16 comprises a plurality of specifically designed surfaces 17 that are oriented such that the secondary light II generated by the phosphors 14 is refracted in a direction towards the substrate 11 but away from the primary light source 10. Another part of the secondary light II will experience total internal reflection at the surfaces 17 and may leave the component 13 without penetrating the air chamber 15.
- the orientation of these surfaces 17 varies along the component 13 in dependence of the angular position with respect to the primary light source 10.
- adjacent surfaces 17 are oriented perpendicularly to each other near the substrate 11, whereas the surfaces 17 define a smaller angle above the primary light source 10 (i.e. near the dome zenith).
- the light emitting device 2 comprises a reflector 18 provided on or over the substrate 11.
- the reflector 18 may substantially surround the primary light source 10, as can be observed from FIG. 2.
- the part of the secondary light II that is redirected by the optical structure 16 is preferably directed to the reflector 18 in order to increase the probability that the secondary light II will eventually be output from the light emitting device 2, thereby increasing the luminous efficacy of the light emitting device 2.
- the component 13 is preferably made of plastic (e.g. PC or PMMI) or silicon. These materials are relatively inexpensive and can relatively easily be molded to provide the optical structure 16. Alternatively, the component 13 is made of a ceramic material.
- Phosphor(s) 14 may be added before molding the component 13 or at a later stage.
- the phosphors may also be coated at the outer side of the component 13, i.e. at the side facing away from the primary light source 10, forming a layer or shell over it. It should be appreciated that various modifications of the embodiment of FIG.
- the separate layer 20 comprises the optical structure 16 to redirect the part of the secondary light II in a direction towards the substrate 11 but away from the primary light source 10, e.g. by refraction of the part of the secondary light.
- FIG. 4B provides a schematic illustration of an inversely truncated pyramid component 33 provided with an optical structure 36 comprising surfaces 37 oriented such that secondary light will be directed towards the substrate 31 but away from the primary light source 30 as described above.
- the surfaces 37 are oriented such that adjacent surfaces 37 meet at a point A and a line drawn between the center of the primary light source 30 and the point A divides the sharp angle between the surfaces 37 in substantially equal parts.
- a chamber 35 exists filled with a substance, such as air, having a refractive index below that of the inversely truncated pyramid component 33.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Led Device Packages (AREA)
- Planar Illumination Modules (AREA)
Abstract
Description
Claims
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/375,673 US8690395B2 (en) | 2009-06-04 | 2010-05-27 | Efficient light emitting device and method for manufacturing such a device |
RU2011153969/28A RU2525620C2 (en) | 2009-06-04 | 2010-05-27 | Effective light emitting device and method of manufacture of such device |
CN201080024763.XA CN102460747B (en) | 2009-06-04 | 2010-05-27 | Efficient light emitting device and method for manufacturing such a device |
JP2012513704A JP5555318B2 (en) | 2009-06-04 | 2010-05-27 | Highly efficient light emitting device and method of manufacturing such a device |
BRPI1009040A BRPI1009040A2 (en) | 2009-06-04 | 2010-05-27 | light emitting device, lighting device configured to illuminate an area or environment and method for the manufacture of a light emitting device |
KR1020177016188A KR101877695B1 (en) | 2009-06-04 | 2010-05-27 | Efficient light emitting device and method for manufacturing such a device |
KR1020127000266A KR101749220B1 (en) | 2009-06-04 | 2010-05-27 | Efficient light emitting device and method for manufacturing such a device |
EP10727926.7A EP2438630B1 (en) | 2009-06-04 | 2010-05-27 | Efficient light-emitting converted device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP09161945 | 2009-06-04 | ||
EP09161945.2 | 2009-06-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2010143093A1 true WO2010143093A1 (en) | 2010-12-16 |
Family
ID=42563021
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB2010/052365 WO2010143093A1 (en) | 2009-06-04 | 2010-05-27 | Efficient light emitting device and method for manufacturing such a device |
Country Status (9)
Country | Link |
---|---|
US (1) | US8690395B2 (en) |
EP (1) | EP2438630B1 (en) |
JP (1) | JP5555318B2 (en) |
KR (2) | KR101877695B1 (en) |
CN (1) | CN102460747B (en) |
BR (1) | BRPI1009040A2 (en) |
RU (1) | RU2525620C2 (en) |
TW (1) | TWI570964B (en) |
WO (1) | WO2010143093A1 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103187515A (en) * | 2011-12-30 | 2013-07-03 | 财团法人工业技术研究院 | Light conversion structure and packaging structure of light emitting diode applying same |
CN103348476A (en) * | 2011-01-13 | 2013-10-09 | 艾尔坦研究生产商业联合股份公司 | White-light light-emitting diode lamp with remote reflective photoluminescent converter |
WO2013182950A1 (en) * | 2012-06-05 | 2013-12-12 | Koninklijke Philips N.V. | Lighting device having a remote wave length converting layer |
US9360176B2 (en) | 2010-12-29 | 2016-06-07 | 3M Innovative Properties Company | Remote phosphor LED constructions |
US10203508B2 (en) | 2013-11-22 | 2019-02-12 | Osram Gmbh | Lighting device |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170003182A (en) * | 2015-06-30 | 2017-01-09 | 서울반도체 주식회사 | Light emitting diode |
WO2017055141A1 (en) * | 2015-09-29 | 2017-04-06 | Philips Lighting Holding B.V. | Led module with output lens |
JP2018128617A (en) * | 2017-02-10 | 2018-08-16 | 信越化学工業株式会社 | Wavelength conversion member and led light-emitting device |
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JP2006286701A (en) * | 2005-03-31 | 2006-10-19 | Mitsubishi Electric Corp | Semiconductor light emitting device |
US20070012940A1 (en) * | 2005-07-14 | 2007-01-18 | Samsung Electro-Mechanics Co., Ltd. | Wavelength-convertible light emitting diode package |
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WO2008060586A2 (en) | 2006-11-15 | 2008-05-22 | The Regents Of The University Of California | Textured phosphor conversion layer light emitting diode |
US20090001399A1 (en) | 2007-06-27 | 2009-01-01 | The Regents Of The University Of California | Optical designs for high-efficacy white-light emitting diodes |
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2010
- 2010-05-27 EP EP10727926.7A patent/EP2438630B1/en active Active
- 2010-05-27 CN CN201080024763.XA patent/CN102460747B/en active Active
- 2010-05-27 JP JP2012513704A patent/JP5555318B2/en active Active
- 2010-05-27 BR BRPI1009040A patent/BRPI1009040A2/en not_active Application Discontinuation
- 2010-05-27 US US13/375,673 patent/US8690395B2/en active Active
- 2010-05-27 WO PCT/IB2010/052365 patent/WO2010143093A1/en active Application Filing
- 2010-05-27 RU RU2011153969/28A patent/RU2525620C2/en active
- 2010-05-27 KR KR1020177016188A patent/KR101877695B1/en active IP Right Grant
- 2010-05-27 KR KR1020127000266A patent/KR101749220B1/en active IP Right Grant
- 2010-06-01 TW TW099117615A patent/TWI570964B/en active
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Also Published As
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KR101877695B1 (en) | 2018-07-12 |
BRPI1009040A2 (en) | 2016-08-23 |
US20120087106A1 (en) | 2012-04-12 |
TWI570964B (en) | 2017-02-11 |
CN102460747A (en) | 2012-05-16 |
US8690395B2 (en) | 2014-04-08 |
KR20170085084A (en) | 2017-07-21 |
RU2011153969A (en) | 2013-07-20 |
EP2438630A1 (en) | 2012-04-11 |
KR20120027047A (en) | 2012-03-20 |
KR101749220B1 (en) | 2017-06-20 |
EP2438630B1 (en) | 2019-05-08 |
JP5555318B2 (en) | 2014-07-23 |
JP2012529171A (en) | 2012-11-15 |
CN102460747B (en) | 2015-04-15 |
RU2525620C2 (en) | 2014-08-20 |
TW201104932A (en) | 2011-02-01 |
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