CN103187515A - Light conversion structure and packaging structure of light emitting diode applying same - Google Patents
Light conversion structure and packaging structure of light emitting diode applying same Download PDFInfo
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- CN103187515A CN103187515A CN2012102275809A CN201210227580A CN103187515A CN 103187515 A CN103187515 A CN 103187515A CN 2012102275809 A CN2012102275809 A CN 2012102275809A CN 201210227580 A CN201210227580 A CN 201210227580A CN 103187515 A CN103187515 A CN 103187515A
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- light
- microstructured layers
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 24
- 238000006243 chemical reaction Methods 0.000 title abstract 3
- 239000000843 powder Substances 0.000 claims abstract description 47
- 230000000149 penetrating effect Effects 0.000 claims abstract 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 37
- 238000004020 luminiscence type Methods 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 22
- 238000000576 coating method Methods 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000741 silica gel Substances 0.000 claims description 8
- 229910002027 silica gel Inorganic materials 0.000 claims description 8
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 230000005284 excitation Effects 0.000 abstract 1
- 238000001228 spectrum Methods 0.000 description 8
- 238000000465 moulding Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000009877 rendering Methods 0.000 description 3
- 238000007907 direct compression Methods 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 210000004276 hyalin Anatomy 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
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Abstract
The invention discloses a light conversion structure and a packaging structure of a light emitting diode, wherein the light conversion structure comprises a first micro-structure layer and a stacking structure formed by stacking a plurality of fluorescent powder layers. The first microstructure layer comprises a first flat surface and a first rough surface, and a light ray is incident from the first rough surface and is emitted from the first flat surface after penetrating through the first microstructure layer to form a plurality of first scattered lights. The stack structure is arranged on the first flat surface to absorb each first scattered light emitted by the first flat surface and excite a plurality of excitation lights.
Description
Technical field
The present invention relates to a kind of encapsulating structure of light-emitting diode, particularly relate to the encapsulating structure of the light-emitting diode of a kind of light transformational structure with at least one micro-structural and its application.
Background technology
Along with the lifting of the luminous efficiency of white light emitting diode (LED, Light Emitting Diode), white light LEDs has become the new generation light source of extremely paying attention to.
Present white light LEDs mostly forms white light by blue chip excitated fluorescent powder body, and the optical quality quality that converts to after the white light is judged by brightness, color rendering and the light source luminous intensity distribution of light source, and color rendering is determined by the mixing method of fluorescent powder, be with the mixing color rendering that increases thus of multi-wavelength's fluorescent powder together mostly, but because the mixing exciting light that causes easily of multiple fluorescent powder absorbs problem mutually together, cause the not good problem of luminous efficiency.
Moreover, if the light that is emitted by luminescence chip reenters when being mapped to other materials (as phosphor powder layer), because of the refraction coefficient difference between material and surrounding medium, can cause the light that is incident to other materials under specific incidence angle, to suffer total reflection.This will make the light extraction efficiency of LED reduce.
Summary of the invention
In view of above problem, the object of the present invention is to provide a kind of have the light transformational structure of a stacked structure and the encapsulating structure of light-emitting diode, be used for solving prior art because the mixing exciting light that causes easily of multiple fluorescent powder absorbs mutually together, cause the not good problem of luminous efficiency.
The disclosed smooth transformational structure of the present invention, it comprises first microstructured layers and a stacked structure.First microstructured layers comprises one first tabular surface and one first matsurface.One light is incident to first microstructured layers by first matsurface, forms a plurality of scattered lights, and is penetrated by first tabular surface.Stacked structure is piled up by a plurality of phosphor powder layers and forms, and is arranged on first tabular surface of first microstructured layers, with the scattered light of absorption by first tabular surface ejaculation of first microstructured layers, and inspires a plurality of exciting lights.
In one embodiment, the encapsulating structure of the disclosed light-emitting diode of the present invention comprises one in order to the luminescence chip that sends a light and one light transformational structure.The light transformational structure comprises one first microstructured layers and stacked structure.First microstructured layers comprises one first tabular surface and one first matsurface, and light forms a plurality of first scattered lights by the first matsurface incident of first microstructured layers, and is penetrated by first tabular surface of first microstructured layers.
Stacked structure is piled up by a plurality of phosphor powder layers on first tabular surface that forms and be arranged at first microstructured layers, with absorption each scattered light by first tabular surface ejaculation of first microstructured layers, and inspires a plurality of exciting lights.
Thus, the light transformational structure just can reduce the reflection situation that produces when light is incident to stacked structure, makes the extraction yield of light and light emission rate significantly to promote.
About feature of the present invention, the real work and effect, conjunction with figs. is described in detail as follows as most preferred embodiment now.
Description of drawings
Figure 1A is the generalized section of the light transformational structure of one embodiment of the invention;
Figure 1B is the generalized section of the light transformational structure of one embodiment of the invention;
Fig. 2 A is the generalized section of the package structure for LED of one embodiment of the invention;
Fig. 2 B is the generalized section of the package structure for LED of one embodiment of the invention;
Fig. 3 A is the generalized section of the package structure for LED of one embodiment of the invention;
Fig. 3 B is the generalized section of the package structure for LED of one embodiment of the invention.
The main element symbol description
10,23 first micro-structurals
The 11-13 phosphor powder layer
The 11a-13a fluorescent powder
14 second micro-structurals
101 first matsurfaces
102 first tabular surfaces
142 second matsurfaces
141 second tabular surfaces
131,311 surfaces
21,31 luminescence chips
22,33 packaging bodies
32 adhesion coatings
D1, D2 distance
M1, M2 light transformational structure
Embodiment
Please refer to Figure 1A, it is the generalized section of light transformational structure according to an embodiment of the invention.The light transformational structure M1 of present embodiment comprises one first microstructured layers 10, a plurality of phosphor powder layer (shown in phosphor powder layer 11 to 13, but not being restriction of the present invention).Phosphor powder layer 11 to 13 piles up and forms a stacked structure.First microstructured layers 10 comprises one first tabular surface 102 and one first matsurface 101.Stacked structure is arranged on first tabular surface 102 of first microstructured layers 10.
When light is incident in first microstructured layers 10 by first matsurface 101 of first microstructured layers 10, because the refractive index in the light transformational structure M1 is different with light transformational structure M1 refractive index outward, and first matsurface 101 can make the incident angle of light change, so light forms a plurality of first scattered lights after being incident to 10 layers of first micro-structurals.These first scattered lights are penetrated by first tabular surface 102 of first microstructured layers 10.
In one embodiment, first microstructured layers 10 can be with phosphor powder layer 11 but is not limited to same material.
In one embodiment, first microstructured layers 10 can direct compression moulding on the surface of phosphor powder layer 11.In another embodiment, first microstructured layers 10 mode that can additionally see through the mode that is not limited to pad pasting or spray nanoparticle on the surface of phosphor powder layer 11 is come moulding.
Because the light transformational structure M1 of present embodiment is provided with first microstructured layers 10, make the light that is incident to stacked structure will significantly promote, and can reduce the problem of the total reflection of light, make the light emission rate of light transformational structure M1 promote.
Based on the above embodiments, the present invention provides an embodiment again, please refer to shown in Figure 1B, and it is the generalized section of light transformational structure according to an embodiment of the invention.According to the light transformational structure M2 that present embodiment provides, its light transformational structure M1 than Figure 1A is provided with one second microstructured layers 14 more.This second microstructured layers 14 comprises one second tabular surface 141 and one second matsurface 142.Second tabular surface 141 is arranged on the surface 131 of phosphor powder layer 13, and phosphor powder layer 13 piles up mutually with second microstructured layers 14.
In one embodiment, second microstructured layers 14 can be with phosphor powder layer 13 but is not limited to same material.
In one embodiment, second microstructured layers 14 can direct compression moulding on the surface of phosphor powder layer 13.In another embodiment, second microstructured layers 14 mode that can additionally see through the mode that is not limited to pad pasting or spray nanoparticle on the surface of phosphor powder layer 13 is come moulding.
When the exciting light that is penetrated by phosphor powder layer 13 among Figure 1A, Figure 1B is incident in second microstructured layers 14 by second tabular surface 141 of second microstructured layers 14, because the refractive index in the light transformational structure M2 is different with light transformational structure M2 refractive index outward, and second matsurface 142 can make the incident angle of light change, therefore these light will produce the light scattering after being incident to 14 layers of second micro-structurals, and form a plurality of second scattered lights with the 4th spectrum, and penetrated by second matsurface 142 of second microstructured layers 14.
Thus, the light transformational structure M2 of this embodiment not only makes the light be incident to stacked structure will significantly promote, and reduces the reflection of light, more because of the setting of second microstructured layers 14, and has promoted the light emission rate of light transformational structure M2.
Smooth transformational structure M1 provided by the present invention and M2 can be implemented in the encapsulating structure of light-emitting diode in a different manner.
For a nearlyer step sets forth light transformational structure M1 and is implemented on situation in the encapsulating structure of light-emitting diode, please be simultaneously with reference to Figure 1A and Fig. 2 A, Fig. 2 A is the generalized section of package structure for LED according to an embodiment of the invention.The encapsulating structure of light-emitting diode comprises a luminescence chip 21, a packaging body 22 and a smooth transformational structure M1.
In one embodiment, light transformational structure M1 can be made into a film paster, is arranged on the surface of packaging body 22.(the film paster is one of implementation method of this case, is not the restriction of the manufacture method of this case structure)
The present invention provides an enforcement sample attitude of encapsulating structure of light-emitting diode of using the light transformational structure M1 of Figure 1A again.Please be simultaneously with reference to Figure 1A and Fig. 3 A, Fig. 3 A is the generalized section of package structure for LED according to an embodiment of the invention.The encapsulating structure of light-emitting diode comprises a luminescence chip 31, an adhesion coating 32, a packaging body 33 and a smooth transformational structure M1.
In one embodiment, light transformational structure M1 can be made into a film paster, by adhesion coating 32, is arranged on the surface of luminescence chip 31.
For a nearlyer step sets forth light transformational structure M2 and is implemented on situation in the encapsulating structure of light-emitting diode, please be simultaneously with reference to Figure 1B and Fig. 2 B, Fig. 2 B is the generalized section of package structure for LED according to an embodiment of the invention.The encapsulating structure of light-emitting diode comprises a luminescence chip 21, a packaging body 22 and a smooth transformational structure M2.
In one embodiment, light transformational structure M2 can be made into a film paster, is arranged on the surface of packaging body 22.
The present invention provides an enforcement sample attitude of encapsulating structure of light-emitting diode of using the light transformational structure M2 of Figure 1B again.Please be simultaneously with reference to Figure 1B and Fig. 3 B, Fig. 3 B is the generalized section of package structure for LED according to an embodiment of the invention.The encapsulating structure of light-emitting diode comprises a luminescence chip 31, an adhesion coating 32, a packaging body 33 and a smooth transformational structure M2.
In one embodiment, light transformational structure M2 can be made into a film paster, by adhesion coating 32, is arranged on the surface of luminescence chip 31.
First microstructured layers of each above-mentioned embodiment and second microstructured layers are hyaline layer, and can be designed to have regularly arranged or non-regularly arranged micro-structural according to user's needs.
The execution mode of the stacked structure of each above-mentioned embodiment can be implemented with reference to No. 201123548 described mode of TaiWan, China publication, yet this execution mode is not the restriction of the technical characterictic of this case.
In addition, the execution mode of the luminescence chip of each above-mentioned embodiment also can carry out the design of roughening on the surface of luminescence chip, yet this execution mode is not the restriction of the technical characterictic of this case.
Thus, the light transformational structure just can reduce the reflection situation that produces when light is incident to stacked structure, makes the extraction yield of light and light emission rate significantly to promote.
Claims (20)
1. light transformational structure, it comprises:
First microstructured layers comprises first tabular surface and first matsurface, and light is incident to this first microstructured layers by this first matsurface, forms a plurality of first scattered lights, and is penetrated by this first tabular surface; And
Stacked structure is formed by a plurality of phosphor powder layers with piling up, and is arranged on this first tabular surface, with absorption each this first scattered light by this first tabular surface ejaculation, and inspires a plurality of exciting lights.
2. smooth transformational structure as claimed in claim 1, this first microstructured layers of Qi Zhong With material of folded phosphor powder layer mutually are identical with the material of this first microstructured layers.
3. smooth transformational structure as claimed in claim 1 also further comprises:
Second microstructured layers comprises second tabular surface and second matsurface, and this second tabular surface is arranged on this stacked structure, and those exciting lights penetrate this second microstructured layers and after forming a plurality of second scattered lights, penetrated by this second matsurface.
4. smooth transformational structure as claimed in claim 3, wherein this light transformational structure is the film paster.
5. smooth transformational structure as claimed in claim 3, wherein the material of the material of folded phosphor powder layer and this second microstructured layers is identical mutually with this second microstructured layers.
6. the encapsulating structure of a light-emitting diode, it comprises:
Luminescence chip is in order to emit beam; And
The light transformational structure comprises first surface and second surface, and this light transformational structure comprises:
First microstructured layers comprises first tabular surface and first matsurface, and this light is penetrated by this first tabular surface by as this first matsurface incident of this first surface and form a plurality of first scattered lights after penetrating this first microstructured layers; And
Stacked structure is formed by a plurality of phosphor powder layers with piling up, and is arranged on this first tabular surface, to absorb each this first scattered light that is penetrated by this first tabular surface and to inspire a plurality of exciting lights.
7. encapsulating structure as claimed in claim 6, wherein this encapsulating structure also further comprises:
Packaging body is arranged between this luminescence chip and this light transformational structure.
8. encapsulating structure as claimed in claim 7, wherein the distance between this first matsurface and this luminescence chip is greater than the one-tenth-value thickness 1/10 of this first micro-structural.
9. encapsulating structure as claimed in claim 7, wherein this light transformational structure is the film paster, and is arranged on the surface of this packaging body.
10. encapsulating structure as claimed in claim 7, wherein this packaging body is silica gel.
11. encapsulating structure as claimed in claim 6, wherein this light transformational structure also further comprises:
Second microstructured layers, comprise second tabular surface and second matsurface, this second tabular surface and this first microstructured layers are with this stacked structure double team therein, those exciting lights, are penetrated by this second matsurface as this second surface after forming a plurality of second scattered lights penetrating this second microstructured layers.
12. encapsulating structure as claimed in claim 11, wherein the material of the material of folded phosphor powder layer and this second microstructured layers is identical mutually with this second microstructured layers.
13. encapsulating structure as claimed in claim 6 also further comprises:
Adhesion coating is arranged between this first matsurface and this luminescence chip.
14. encapsulating structure as claimed in claim 13, wherein the distance between this first matsurface and this luminescence chip is greater than the one-tenth-value thickness 1/10 of this first micro-structural.
15. encapsulating structure as claimed in claim 14, wherein this light transformational structure is the film paster, and this first matsurface of this light transformational structure is arranged on the surface of this adhesion coating.
16. encapsulating structure as claimed in claim 14, wherein this light transformational structure also further comprises:
Second microstructured layers, comprise second tabular surface and second matsurface, this first tabular surface of this second tabular surface and this first microstructured layers is clipped in this stacked structure wherein, those exciting lights penetrate this second microstructured layers and after forming a plurality of second scattered lights, are penetrated by this second matsurface as this second surface.
17. encapsulating structure as claimed in claim 16, wherein the material of the material of folded phosphor powder layer and this second microstructured layers is identical mutually with this second microstructured layers.
18. encapsulating structure as claimed in claim 13, wherein this encapsulating structure also further comprises:
Packaging body is arranged on this second surface of this light transformational structure.
19. encapsulating structure as claimed in claim 18, wherein this packaging body is the silica gel with identical refractive index or different refractivity with the material of this adhesion coating.
20. the material of the phosphor powder layer that encapsulating structure as claimed in claim 6, this first microstructured layers of Qi Zhong With are folded mutually is identical with the material of this first microstructured layers.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100149918A TW201327926A (en) | 2011-12-30 | 2011-12-30 | Light conversion structure and the light emitting device packaging structure using the same |
| TW100149918 | 2011-12-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103187515A true CN103187515A (en) | 2013-07-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012102275809A Pending CN103187515A (en) | 2011-12-30 | 2012-07-02 | Light conversion structure and packaging structure of light emitting diode applying same |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103187515A (en) |
| TW (1) | TW201327926A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105098035A (en) * | 2014-05-12 | 2015-11-25 | Lg伊诺特有限公司 | Lighting device |
| CN108803147A (en) * | 2018-07-02 | 2018-11-13 | 京东方科技集团股份有限公司 | Backlight module and display device with it |
| US10396255B2 (en) | 2014-06-12 | 2019-08-27 | Genesis Photonics Inc. | Light emitting component |
| US10439111B2 (en) | 2014-05-14 | 2019-10-08 | Genesis Photonics Inc. | Light emitting device and manufacturing method thereof |
| US10854780B2 (en) | 2017-11-05 | 2020-12-01 | Genesis Photonics Inc. | Light emitting apparatus and manufacturing method thereof |
| US10910523B2 (en) | 2014-05-14 | 2021-02-02 | Genesis Photonics Inc. | Light emitting device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106292055A (en) * | 2015-06-09 | 2017-01-04 | 瑞仪光电(苏州)有限公司 | Quantum dot enhanced film and backlight module |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105098035A (en) * | 2014-05-12 | 2015-11-25 | Lg伊诺特有限公司 | Lighting device |
| US10439111B2 (en) | 2014-05-14 | 2019-10-08 | Genesis Photonics Inc. | Light emitting device and manufacturing method thereof |
| US10910523B2 (en) | 2014-05-14 | 2021-02-02 | Genesis Photonics Inc. | Light emitting device |
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| CN108803147A (en) * | 2018-07-02 | 2018-11-13 | 京东方科技集团股份有限公司 | Backlight module and display device with it |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201327926A (en) | 2013-07-01 |
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Application publication date: 20130703 |