WO2010134779A3 - Half tone mask having multi half permeation part and manufacturing method of the same - Google Patents

Half tone mask having multi half permeation part and manufacturing method of the same Download PDF

Info

Publication number
WO2010134779A3
WO2010134779A3 PCT/KR2010/003214 KR2010003214W WO2010134779A3 WO 2010134779 A3 WO2010134779 A3 WO 2010134779A3 KR 2010003214 W KR2010003214 W KR 2010003214W WO 2010134779 A3 WO2010134779 A3 WO 2010134779A3
Authority
WO
WIPO (PCT)
Prior art keywords
tone mask
permeation part
manufacturing
same
transmittance
Prior art date
Application number
PCT/KR2010/003214
Other languages
French (fr)
Other versions
WO2010134779A2 (en
Inventor
Jinho Hong
Jongsun Kim
Jaeyong Suh
Chungwon Seo
Original Assignee
Lg Innotek Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020090044350A external-priority patent/KR20100125574A/en
Priority claimed from KR1020090098717A external-priority patent/KR101168409B1/en
Application filed by Lg Innotek Co., Ltd. filed Critical Lg Innotek Co., Ltd.
Priority to JP2012511766A priority Critical patent/JP2012527639A/en
Priority to CN201080022197.9A priority patent/CN102439519B/en
Publication of WO2010134779A2 publication Critical patent/WO2010134779A2/en
Publication of WO2010134779A3 publication Critical patent/WO2010134779A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

A half tone mask is characterized in that the half tone mask having at least one or more half permeation parts capable of adjusting a transmittance by adjusting pattern density of a fine pattern forming the half permeation part, whereby a pattern density of a fine pattern can be adjusted to enhance the efficiency of adjusting the transmittance in a half tone mask formed with a slit type half permeation part, a stacked type half permeation part or a combination thereof, and the transmittance of the half permeation region can be accurately controlled through adjustment of the pattern density without recourse to a separate manufacturing process.
PCT/KR2010/003214 2009-05-21 2010-05-20 Half tone mask having multi half permeation part and manufacturing method of the same WO2010134779A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012511766A JP2012527639A (en) 2009-05-21 2010-05-20 Halftone mask and manufacturing method thereof
CN201080022197.9A CN102439519B (en) 2009-05-21 2010-05-20 Half tone mask having multi half permeation part and manufacturing method of the same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020090044350A KR20100125574A (en) 2009-05-21 2009-05-21 Half tone mask having multi half permeation part and manufacturing method of the same
KR10-2009-0044350 2009-05-21
KR1020090098717A KR101168409B1 (en) 2009-10-16 2009-10-16 Photo mask having multi half permeation part and Method for manufacturing thereof
KR10-2009-0098717 2009-10-16

Publications (2)

Publication Number Publication Date
WO2010134779A2 WO2010134779A2 (en) 2010-11-25
WO2010134779A3 true WO2010134779A3 (en) 2011-02-17

Family

ID=43126669

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/003214 WO2010134779A2 (en) 2009-05-21 2010-05-20 Half tone mask having multi half permeation part and manufacturing method of the same

Country Status (4)

Country Link
JP (1) JP2012527639A (en)
CN (1) CN102439519B (en)
TW (1) TWI431409B (en)
WO (1) WO2010134779A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102645839B (en) * 2011-06-15 2013-11-27 北京京东方光电科技有限公司 Mask plate and manufacturing method thereof
JP6076593B2 (en) * 2011-09-30 2017-02-08 Hoya株式会社 Multi-tone photomask for manufacturing display device, multi-tone photomask manufacturing method for display device manufacturing, pattern transfer method, and thin-film transistor manufacturing method
CN104267518B (en) * 2014-09-24 2016-02-03 深圳市华星光电技术有限公司 Display panels and manufacture method thereof
JP6322607B2 (en) * 2015-07-30 2018-05-09 Hoya株式会社 Multi-tone photomask for manufacturing display device, multi-tone photomask manufacturing method for display device manufacturing, and thin-film transistor manufacturing method
CN106125500B (en) * 2016-08-31 2020-02-07 深圳市华星光电技术有限公司 Photomask and preparation method of black light resistance spacing layer
CN106371243A (en) * 2016-11-15 2017-02-01 深圳市华星光电技术有限公司 Display substrate and manufacturing method thereof
JP7037919B2 (en) * 2017-11-14 2022-03-17 アルバック成膜株式会社 Mask blank, halftone mask and its manufacturing method
CN109188854B (en) * 2018-10-18 2020-06-09 合肥鑫晟光电科技有限公司 Mask plate, display substrate, manufacturing method of display substrate and display device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020074546A (en) * 2001-03-20 2002-10-04 삼성전자 주식회사 Phase shifting mask for manufacturing semiconductor device and fabricating method thereof
KR20070101902A (en) * 2006-04-12 2007-10-18 엘지마이크론 주식회사 Half tone mask having multi half permeation part and method for manufacturing thereof
KR20080000446A (en) * 2006-06-27 2008-01-02 주식회사 하이닉스반도체 Exposure with multi-transmission rate filter

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5543253A (en) * 1994-08-08 1996-08-06 Electronics & Telecommunications Research Inst. Photomask for t-gate formation and process for fabricating the same
KR100215850B1 (en) * 1996-04-12 1999-08-16 구본준 Half-tone phase shift mask and fabrication method thereof
JP2003255510A (en) * 2002-03-01 2003-09-10 Hitachi Ltd Method for manufacturing electronic device
US7001694B2 (en) * 2002-04-30 2006-02-21 Matsushita Electric Industrial Co., Ltd. Photomask and method for producing the same
KR100848815B1 (en) * 2004-11-08 2008-07-28 엘지마이크론 주식회사 Half tone mask and fabricating method and flat panel displayq
JP5228390B2 (en) * 2006-07-21 2013-07-03 大日本印刷株式会社 Gradation mask
CN101438386B (en) * 2007-05-11 2012-03-07 Lg伊诺特有限公司 Intermediate tone mask with a plurality of semi-permeation parts and method of manufacturing the same
JP4930324B2 (en) * 2007-10-29 2012-05-16 セイコーエプソン株式会社 Thin film transistor manufacturing method
JP5035537B2 (en) * 2007-10-31 2012-09-26 大日本印刷株式会社 Gradation mask defect correction method and gradation mask
JP5372403B2 (en) * 2008-05-01 2013-12-18 Ｈｏｙａ株式会社 Multi-tone photomask and pattern transfer method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020074546A (en) * 2001-03-20 2002-10-04 삼성전자 주식회사 Phase shifting mask for manufacturing semiconductor device and fabricating method thereof
KR20070101902A (en) * 2006-04-12 2007-10-18 엘지마이크론 주식회사 Half tone mask having multi half permeation part and method for manufacturing thereof
KR20080000446A (en) * 2006-06-27 2008-01-02 주식회사 하이닉스반도체 Exposure with multi-transmission rate filter

Also Published As

Publication number Publication date
WO2010134779A2 (en) 2010-11-25
TW201107876A (en) 2011-03-01
JP2012527639A (en) 2012-11-08
TWI431409B (en) 2014-03-21
CN102439519A (en) 2012-05-02
CN102439519B (en) 2014-07-23

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