TWI431409B - Half tone mask having multi half permeation part and manufacturing method of the same - Google Patents
Half tone mask having multi half permeation part and manufacturing method of the same Download PDFInfo
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
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Description
本發明主張關於2009年5月21日所申請的南韓專利案號10-2009-0044350與2009年10月16日所申請的南韓專利案號10-2009-0098717的優先權,並在此以引用的方式併入本文中,以作為參考。 The present invention claims priority to the Korean Patent No. 10-2009-0044350 filed on May 21, 2009, and the Korean Patent No. 10-2009-0098717 filed on Oct. 16, 2009, which is incorporated herein by reference. The manner of this is incorporated herein by reference.
本發明係關於一種半調式光罩,其半透明區域之形成係運用一狹縫式或一堆疊式半透光部或其組合部,其中可調整細微圖案的圖案密度以提昇透光率調整之效率。 The invention relates to a half-tone mask, wherein the semi-transparent region is formed by using a slit type or a stacked semi-transmissive portion or a combination thereof, wherein the pattern density of the fine pattern can be adjusted to improve the transmittance adjustment. effectiveness.
如圖1所繪示經由微影製程用於圖形化之傳統光罩包括,一透明基板1,一透光部(transmission part)3形成於透明基板1上能完全地透射光線,一光阻隔部2能完全地阻隔光線,以及一半透光部4具有能夠透射部分光線之一半調膜層。 As shown in FIG. 1 , the conventional photomask for patterning via the lithography process includes a transparent substrate 1 , and a transmission part 3 is formed on the transparent substrate 1 to completely transmit light, and a light blocking portion 2 can completely block the light, and the half of the light transmitting portion 4 has a semi-adjusting film layer capable of transmitting part of the light.
傳統光罩只能用於一道由曝光-顯影-蝕刻所構成之微影製程循環,因為傳統的光罩只能執行一層圖案。 Conventional reticle can only be used for a lithography process cycle consisting of exposure-development-etching, since conventional reticle can only perform one layer of pattern.
更明確言之,TFT(薄膜電晶體)和CF(彩色濾光片)被沉積/被塗佈有許多的膜層,且個別沉積/塗佈的膜層係藉由微影製程將之圖形化。此時,若可能甚至得以縮減一道微影製程的話,將會是一個極大的經濟效應。然而,傳統光罩之所以不具經濟效益 是因為其被設計為僅使用於一層圖案。此外,必須執行幾次階調以建構一多重半透光部因而產生製程延長與交期的問題。 More specifically, TFT (thin film transistor) and CF (color filter) are deposited/coated with many layers, and individual deposited/coated layers are patterned by lithography process. . At this point, if it is possible to even reduce a lithography process, it will be a great economic effect. However, traditional reticle is not economical It is because it is designed to be used only for one layer of pattern. In addition, several tones must be performed to construct a multiple semi-transmissive portion, thereby creating process delays and delivery issues.
同時,如圖2中所繪示一種稱為灰階光罩(Gray Tone Mask)之不同類型光罩,包括一透光部13形成於一透明基板11上用以完全地透射光線,一光阻隔層12用以完全地阻隔光線,以及藉由減少照射光量之光線透射的一狹縫式圖案14。 At the same time, as shown in FIG. 2, a different type of photomask, called a Gray Tone Mask, includes a light transmissive portion 13 formed on a transparent substrate 11 for completely transmitting light, and a light barrier. Layer 12 serves to completely block light and a slit pattern 14 that is transmitted by reducing the amount of light that is illuminated.
然而,由於在實施狹縫式圖案中受限之故,灰階光罩在可調節透射光量有其極限,因為灰階光罩採用了通過一細微圖案的繞射光(diffraction of light)來調整光量。 However, due to limitations in implementing the slit pattern, the gray scale mask has its limit in adjusting the amount of transmitted light because the gray scale mask uses a diffraction pattern of a fine pattern to adjust the amount of light. .
灰階光罩進一步的缺點在於,如果灰階光罩的尺寸比預定的還大的話,則相同條件的圖形化無法執行。灰階光罩仍有進一步缺點在於,針對狹縫型來說,在施行半透光部曝光是難以控制的,因為灰階光罩採用了繞射光。 A further disadvantage of the gray scale reticle is that if the size of the gray scale reticle is larger than the predetermined one, the patterning of the same condition cannot be performed. A further disadvantage of the gray scale mask is that, for the slit type, exposure to the semi-transmissive portion is difficult to control because the gray scale mask employs diffracted light.
為避免上述問題,本發明之目的在提供一半調式光罩,其所形成之半透明區域係運用一狹縫式或一堆疊式半透光部或其組合部,其中調整細微圖案的圖案密度以提昇透光率調整之效率。 In order to avoid the above problems, an object of the present invention is to provide a half-tone mask in which a translucent region is formed by using a slit type or a stacked semi-transmissive portion or a combination thereof, wherein the pattern density of the fine pattern is adjusted to Improve the efficiency of light transmittance adjustment.
另一目的提供一多重半調式光罩,在狹縫式半透光部的離散間距(discrete space)中填設有半透光材料,以建構出一個能夠控制三個或更多之相互不同透光率的結構。 Another object is to provide a multiple half-tone mask in which a semi-transmissive material is filled in a discrete space of a slit-type semi-transmissive portion to construct a controllable three or more different ones. The structure of light transmittance.
在本發明的一態樣中,提供有一半調式光罩具有至少一個或以上之半透光部,能夠藉由調整形成半透光部一細微圖案之圖案 密度以調整透光率。 In an aspect of the invention, a half-tone mask is provided with at least one or more semi-transmissive portions, which can be adjusted to form a pattern of a semi-transmissive portion and a fine pattern. Density to adjust the light transmittance.
在若干實施例中,在半調式光罩中的半透光部可以有一在半透光膜層上形成細微圖案之結構,一在光線阻隔層上形成一細微圖案並形成有一半透光膜層於其上之結構,或其組合結構。 In some embodiments, the semi-transmissive portion in the half-tone mask may have a structure for forming a fine pattern on the semi-transmissive film layer, and a fine pattern is formed on the light-shielding layer and a half-transparent film layer is formed. The structure thereon, or a combination thereof.
在若干實施例中,半透光膜層可以採用具有透光率範圍在4至75%的半透光材料。 In some embodiments, the semi-transmissive film layer may employ a semi-transmissive material having a light transmittance ranging from 4 to 75%.
在若干實施例中,細微圖案的線寬可被調整在0.1μm至1.3μm的範圍內。 In several embodiments, the line width of the fine pattern can be adjusted in the range of 0.1 μm to 1.3 μm.
在若干實施例中,半透光材料係可為一種具有鉻、矽、鉬、鉭、鈦、鋁之一者作為主要元素之材料或混合有至少兩種或以上元素之組合材料,或至少添加Cox、Ox、Nx中之一者到主要元素材料或組合材料之材料。 In some embodiments, the semi-transmissive material may be a material having one of chromium, bismuth, molybdenum, niobium, titanium, aluminum as a main element or a combination of at least two or more elements, or at least added One of Cox, Ox, Nx to the main element material or the material of the combination material.
在本發明的另一個態樣中,提供有一種製作具有一多重半透光部之半調式光罩的方法,其中半調式光罩包括一細微圖案調整光學透光率,及其中細微圖案之圖案密度被調整,且經由調整細微圖案的線寬在0.1μm至1.3μm範圍內調整光學透光率。 In another aspect of the present invention, there is provided a method of fabricating a halftone reticle having a plurality of semi-transmissive portions, wherein the halftone reticle includes a fine pattern to adjust optical transmittance, and wherein the fine pattern is The pattern density is adjusted, and the optical transmittance is adjusted in the range of 0.1 μm to 1.3 μm by adjusting the line width of the fine pattern.
在本發明的又一態樣中,提供有一半調式光罩包括有被形成於一透明基板上的一透光部,一光阻隔部及一半透光部,其中,半透光部包括一在狹縫中填設有半調式材料的多重半透光部。 In another aspect of the present invention, a half-modular photomask includes a light transmissive portion, a light blocking portion and a half light transmitting portion formed on a transparent substrate, wherein the semi-transmissive portion includes a The slit is filled with a plurality of semi-transmissive portions of a half-tone material.
在若干實施例中,半透光部包括至少一個或以上多重半調式部,其中,半透光部進一步包括至少一個有一半透光材料層所形成的單一半調式部或僅有狹縫所形成的狹縫式半調式部。 In some embodiments, the semi-transmissive portion includes at least one or more multiple half-tone portions, wherein the semi-transmissive portion further includes at least one single half-tone portion formed by a layer of a light transmissive material or only a slit Slit half-tone section.
在若干實施例中,多重半調式部可以包括一具有預定離散間距之狹縫式光阻隔牆,其中一半透光材料層在介於狹縫式光阻隔牆和光阻隔部之間以離散間距所形成。 In some embodiments, the multiple half-tone portion may include a slit-type photoresist wall having a predetermined discrete pitch, wherein a half of the light-transmissive material layer is formed at a discrete pitch between the slit-type light-blocking wall and the light blocking portion. .
在若干實施例中,一半透光材料層可以被成形在狹縫式光阻隔牆和光阻隔部上。 In several embodiments, a layer of semi-transmissive material can be formed over the slit-type barrier wall and the light-blocking portion.
在若干實施例中,半透光材料層係可為一種具有鉬、矽、鉭、鎢、鋁、鉻、鉿、鋯、釩、鎳、鈮、鈷、鈦為主要元素的結合材料,並結合至少兩個或兩個以上的主要元素材料或主要元素,或至少添加Cox、Ox、Nx之一者到主要元素材料或組合材料之材料,其中x是一個自然數。 In some embodiments, the semi-transmissive material layer may be a bonding material having molybdenum, niobium, tantalum, tungsten, aluminum, chromium, niobium, zirconium, vanadium, nickel, niobium, cobalt, titanium as a main element, and combined At least two or more main element materials or main elements, or at least one of Cox, Ox, Nx, or a material of a main element material or a combination material, wherein x is a natural number.
一根據本發明具有上述結構之半調式光罩可以藉由以下製作方法來製造。 A halftone mask having the above structure according to the present invention can be manufactured by the following fabrication method.
在本發明的又一態樣中,提供有一半調式光罩的製作方法,其特徵在於:在堆疊有一光阻隔層的一透明基板上塗佈光阻(第一步驟);由曝光和顯影進行光阻圖形化(第二步驟);經由蝕刻光阻隔層形成一狹縫式光阻隔牆及一透光部(第三步驟);及經由在狹縫式光阻隔牆中堆疊一半透光材料層而形成一多重半調部(第四步驟)。 In still another aspect of the present invention, a method for fabricating a half-tone mask is provided, characterized in that a photoresist is coated on a transparent substrate on which a light blocking layer is stacked (first step); by exposure and development Photoresist patterning (second step); forming a slit type light blocking wall and a light transmitting portion via the etching light blocking layer (third step); and stacking half of the light transmissive material layer in the slit type light blocking wall And a multiple halftone is formed (fourth step).
在若干實施例中,該第四步驟特徵在於:包括於光阻隔層的一上部表面上堆疊一半透光材料層a1;藉由塗佈光阻於半透光材料層上進行圖案化a2;並且透過圖案部選擇性地移除填滿在一透光部或狹縫式光阻隔牆之半透光材料層a3。 In some embodiments, the fourth step is characterized by: stacking a half of the light transmissive material layer a1 on an upper surface of the light blocking layer; patterning a2 by coating the photoresist on the semi-transmissive material layer; The semi-transmissive material layer a3 filled in a light transmitting portion or a slit type light blocking wall is selectively removed through the pattern portion.
在若干實施例中,於光阻隔層或半透光材料層蝕刻之後的光阻移除步驟可進一步包括後續之第三步驟和第四步驟。 In some embodiments, the photoresist removal step after etching of the light blocking layer or semi-transmissive material layer may further comprise a subsequent third step and fourth step.
本發明的優點在於,細微圖案的圖案密度可被調整以提昇調整在使用一狹縫式半透光部、一堆疊式半透光部或其組合部所形成半調式光罩之透光率的效率。 An advantage of the present invention is that the pattern density of the fine pattern can be adjusted to enhance the transmittance of the halftone mask formed by using a slit semi-transmissive portion, a stacked semi-transmissive portion or a combination thereof. effectiveness.
另一優點在於,半透光區域的透光率能夠藉由圖案密度之調整而準確地被控制而無需仰賴分開的製作工序。 Another advantage is that the light transmittance of the semi-transmissive region can be accurately controlled by the adjustment of the pattern density without relying on separate manufacturing processes.
還有另一個優點在於,一多重半調式光罩能在狹縫式半透光部的離散間距中填設有半透光材料以建構出一個能夠控制三個或更多之相互不同透光率的結構。 Still another advantage is that a multiple half-tone mask can be filled with a semi-transmissive material in discrete intervals of the slit-type semi-transmissive portion to construct a three- or more mutually different light transmission. The structure of the rate.
還有進一步的優點在於,能夠藉由在狹縫中的繞射現象和藉由一半透光材料層所控制的透光率提供一高品質多重半調式光罩以大幅提昇設計自由度以及針對缺陷的透光率修正自由度,以助於改進製程良率、縮短製程週期及曝光後提昇產品品質。 A further advantage is that a high quality multiple half-tone mask can be provided by the diffraction phenomenon in the slit and the light transmittance controlled by the half of the light transmissive material layer to greatly improve the design freedom and the defect. The light transmittance corrects the degree of freedom to help improve process yield, shorten process cycle, and improve product quality after exposure.
本發明之架構和操作將參照所附圖示詳細描述。 The architecture and operation of the present invention will be described in detail with reference to the accompanying drawings.
本發明之要旨係提供經由配置細微圖案所形成有半透光區域之半調式光罩,能夠藉由調整細微圖案之圖案密度調整精確的光學透光率。 The gist of the present invention is to provide a halftone mask formed by arranging a semi-transmissive region in a fine pattern, and it is possible to adjust the precise optical transmittance by adjusting the pattern density of the fine pattern.
請參閱圖3,說明了半調式光罩之調整透光率的基本原理。 Please refer to Figure 3, which illustrates the basic principle of adjusting the transmittance of a half-tone mask.
半調式光罩包括一半透光層210形成於一基板200上,及一光阻隔層220完全地阻隔光線。半透光層210可經由在一光阻隔層上形成細微圖案,或在一半透光膜層上形成一光阻隔層而加以實施。所繪示之半透光層顯示出二個半透光區A、B其中光學透光率可被調整。 The halftone mask includes a half light transmissive layer 210 formed on a substrate 200, and a light blocking layer 220 completely blocks light. The semi-transmissive layer 210 can be implemented by forming a fine pattern on a light-blocking layer or forming a light-blocking layer on a half of the light-transmissive film layer. The semi-transmissive layer shown shows two semi-transmissive regions A, B in which the optical transmittance can be adjusted.
請參閱圖4,其中半透光區域A以放大表示之,在一阻隔層上具有一個預設線寬X1、X2、X3...Xn的細微圖案或在一基板上的一半透光層210以間距S1、S2、S3...Sn被形成。在透過半調式光罩實施曝光的情況下,感光材料(photo-sensitive material;PR)在顯影後因光學透光率的改變而使其形狀改變,如圖所示。特別是,細微圖案之寬度的調整足為透光率調整的重要因素。細微圖案密度係為每單位面積所佔有細微圖案之比率,以及從依據圖中單一整體單位面積比率(ratio per entire unit area)的複數個線寬X1、X2、X3...Xn總和得出的數值,其中圖案密度與光學透光率成反比。 Referring to FIG. 4, the semi-transmissive area A is shown in an enlarged manner, and has a fine pattern of a predetermined line width X1, X2, X3, ..., Xn on one of the barrier layers or a half of the light-transmissive layer 210 on a substrate. The pitches S1, S2, S3, ..., Sn are formed. In the case of performing exposure through a half-tone mask, a photo-sensitive material (PR) changes its shape due to a change in optical transmittance after development, as shown. In particular, the adjustment of the width of the fine pattern is an important factor in the adjustment of the light transmittance. The fine pattern density is a ratio of a fine pattern per unit area, and is derived from the sum of a plurality of line widths X1, X2, X3, ... Xn according to a ratio of the entire unit area ratio in the figure. A numerical value in which the pattern density is inversely proportional to the optical transmittance.
圖5為用以製作本發明的一實施例之製程流程圖。 Figure 5 is a flow diagram of a process for making an embodiment of the present invention.
首先,為了形成如圖3中所示一種具有結構的半調式光罩,基板200覆以(filmed with)光阻隔層220 P1,其上塗佈有一光阻230 P2。然後,經過包含一曝光製程P3、一顯影/蝕刻P4和一去除/清潔製程P5,完成具有細微圖案的傳統半調式光罩。 First, in order to form a structured halftone mask as shown in FIG. 3, the substrate 200 is filmed with a light blocking layer 220 P1 on which a photoresist 230 P2 is applied. Then, a conventional halftone mask having a fine pattern is completed by including an exposure process P3, a development/etching P4, and a removal/cleaning process P5.
特別的是,於本發明中形成的較佳細微圖案其線寬能在0.1μm至1.3μm的範圍內被改變。更佳的是,形成具有細微圖案 的半透光區域被塗佈有一半透光膜層240。半透光膜層240可以如一鉻氧化物膜,並且半透光材料可以是一種具有鉻、矽、鉬、鉭、鈦、鋁之一者作為主要元素之材料或混合有至少兩種或以上元素之組合材料,或至少添加Cox,Ox,Nx之一者到主要元素材料或組合材料之材料。 In particular, the preferred fine pattern formed in the present invention has a line width which can be varied in the range of 0.1 μm to 1.3 μm. More preferably, the formation has a fine pattern The semi-transmissive region is coated with a half of the light transmissive film layer 240. The semi-transmissive film layer 240 may be a chromium oxide film, and the semi-transmissive material may be a material having one of chromium, bismuth, molybdenum, niobium, titanium, aluminum as a main element or mixed with at least two or more elements. The combination material, or at least one of Cox, Ox, Nx, is added to the main element material or the material of the combination material.
更明確言之,一堆疊半透光區域的組成物可以是任何組成物,只需能透射在一特定波段部分的光線。例如,堆疊半透光區域可以是從一群組包含CrxOy、CrxCOy、CrxOyNz、SixOy、SixOyNz、SixCOy、SixCOyNz、MoxSiy、MoxOy、MoxOyNz、MoxCOy、MoxOyNz、MoxSiyOz、MoxSiyOzN MoxSiyCOzN、MoxSiyCOz、TaxOy、TaxOyNz、TaxCOy、TaxOyNz、AlxOy、AlxCOy、AlxOyNz、AlxCOyNz、TixOy、TixOyNz、TixCOy中任何一個之組成,或其組合,其中字尾x、y和z為自然數並定義個別元素的原子數目。 More specifically, the composition of a stacked semi-transmissive region can be any composition that only needs to transmit light in a particular portion of the band. For example, the stacked semi-transmissive regions may be comprised of a group comprising Cr x O y , Cr x CO y , Cr x O y N z , Si x O y , Si x O y N z , Si x CO y , Si x CO y N z , Mo x Si y , Mo x O y , Mo x O y N z , Mo x CO y , Mo x O y N z , Mo x Si y O z , Mo x Si y O z N Mo x Si y CO z N, Mo x Si y CO z , Ta x O y , Ta x O y N z , Ta x CO y , Ta x O y N z , Al x O y , Al x CO y , Al x O a composition of any one of y N z , Al x CO y N z , Ti x O y , Ti x O y N z , Ti x CO y , or a combination thereof, wherein the suffixes x, y, and z are natural numbers and are defined The number of atoms of individual elements.
緊接地,半透光膜層240之上部表面可以再次塗佈有光阻250,圖形化、曝光、顯影、蝕刻Q1至Q3,並且去除光阻Q4以形成本發明的的半調式光罩C。 Immediately, the upper surface of the semi-transmissive film layer 240 may be coated with a photoresist 250 again, patterned, exposed, developed, etched Q1 to Q3, and the photoresist Q4 removed to form the half-tone mask C of the present invention.
現在請參閱圖6,將根據本發明依據圖5中的製程來說明藉由透光率調整所獲得半調式光罩之特點。 Referring now to Figure 6, the features of the halftone reticle obtained by light transmittance adjustment will be described in accordance with the process of Figure 5 in accordance with the present invention.
圖6繪製了一圖表,其中塗佈在細微圖案上的半透光膜層具有50%的透光率,及形成光阻隔層的光阻隔材料係為鉻Cr,其中針對每個圖案密度的透光率變化請參閱該圖表。如圖表所繪,可以注意到,當圖案密度在正常的比例中增加時,光學透光率隨 之降低。 Figure 6 plots a graph in which the semi-transmissive film layer coated on the fine pattern has a light transmittance of 50%, and the light-blocking material forming the light-blocking layer is chromium Cr, wherein the density of each pattern is transparent. See the chart for light rate changes. As shown in the chart, it can be noted that when the pattern density increases in the normal ratio, the optical transmittance is Reduced.
為了調整圖案密度,細微圖案的線寬在0.1μm至1.3μm的範圍內進行變化或調整,其中0.1μm的線寬差異會有14%光學透光率的數值變化。透光率數值變化之歸納整理如圖7所示。 In order to adjust the pattern density, the line width of the fine pattern is varied or adjusted in the range of 0.1 μm to 1.3 μm, wherein a line width difference of 0.1 μm has a value change of 14% optical transmittance. The summary of the change in the transmittance value is shown in Fig. 7.
本發明透過如所述細微圖案之線寬數值變化可以很方便地改變透光率,不僅可以得到數值化的線寬變化,而且也大幅降低了製作工序。本發明還具有一個降低缺陷率的優點,藉此增加生產良率。 The present invention can easily change the light transmittance by changing the value of the line width of the fine pattern as described above, and not only can the numerical line width change be obtained, but also the manufacturing process can be greatly reduced. The present invention also has an advantage of reducing the defect rate, thereby increasing the production yield.
本發明之要旨係提供一具有多重半階調部之光罩結構,其於狹縫式半透光部的離散間距中填有半透光材料。 SUMMARY OF THE INVENTION The gist of the present invention is to provide a reticle structure having a plurality of half-tone modulating portions filled with a semi-transmissive material in discrete intervals of the slit-type semi-transmissive portion.
圖8和9為依據本發明另一實施例之半調式光罩的生產製程流程圖和製程圖。 8 and 9 are flowcharts and process diagrams of a manufacturing process of a half-tone mask according to another embodiment of the present invention.
現在將參照本發明流程圖來詳述經由製造方法所實施光罩結構之一實施例。 One embodiment of a reticle structure implemented via a manufacturing method will now be described in detail with reference to the flowchart of the present invention.
請參閱圖8和9,一光罩製造方法的特徵在於:在堆疊有一光阻隔層的一透明基板上塗佈光阻(第一步驟);由曝光和顯影進行光阻圖形化(第二步驟);經由蝕刻光阻隔層形成一狹縫式光阻隔牆及一透光部(第三步驟);及經由在狹縫式光阻隔牆中堆疊一半透光材料層而形成一多重半調部(第四步驟)。 Referring to Figures 8 and 9, a mask manufacturing method is characterized in that a photoresist is coated on a transparent substrate on which a light blocking layer is stacked (first step); photoresist patterning is performed by exposure and development (second step) Forming a slit type light blocking wall and a light transmitting portion via the etching light blocking layer (third step); and forming a multiple halftone portion by stacking a half of the light transmissive material layer in the slit type light blocking wall (Fourth step).
更明確言之,在第一步驟中S1,該製造方法可以包括形成一空白光罩,其中一透明基板110覆以一光阻隔層120。形成光阻隔 層的材料可以是任何能阻隔光的材質,但最適當的是,Cr和CrxOy的任一者或兩者的組合物,其中x和y是自然數,依照元素的組合而改變。 More specifically, in the first step S1, the manufacturing method may include forming a blank mask in which a transparent substrate 110 is covered with a light blocking layer 120. The material forming the light blocking layer may be any material capable of blocking light, but most suitably, a combination of either Cr and Cr x O y or both, wherein x and y are natural numbers, according to combinations of elements And change.
接著,在第二步驟中(S2),塗佈光阻130,然後曝光,顯影及圖形化成預設圖案。透過一圖形化圖案131蝕刻一光阻隔層120以架構出具有一透光部122和狹縫式光阻隔牆121所形成的一半透光部123。 Next, in the second step (S2), the photoresist 130 is applied, then exposed, developed, and patterned into a predetermined pattern. A light blocking layer 120 is etched through a patterned pattern 131 to form a half light transmitting portion 123 formed by a light transmitting portion 122 and a slit light blocking wall 121.
此後,一半透光材料141可以填充於狹縫式光阻隔牆121以形成一多重半調部H(S41)。 Thereafter, half of the light transmissive material 141 may be filled in the slit type barrier wall 121 to form a multiple halftone portion H (S41).
亦即,根據本發明的多重半調部H具有於狹縫式光阻隔牆中填有半透光材料的結構。 That is, the multiple half-tone portion H according to the present invention has a structure in which a slit-type light-blocking wall is filled with a semi-transmissive material.
該半透光材料最好可以是一種具有鉬、矽、鉭、鎢、鋁、鉻、鉿、鋯、釩、鎳、鈮、鈷、鈦作為主要元素之一者的材料,或可以是一種結合材料混合有至少兩種或以上元素,或至少添加Cox、Ox、Nx之一者到單一主要元素材料或組合材料之材料。可以是從一群組包含CrxOy、CrxCOy、CrxOyNz、SixOy、SixOyNz、SixCOy、SixCOyNz、MoxSiy、MoxOy、MoxOyNz、MoxCOy、MOxOyNz、MoxSiyOz、MoxSiyOzN MoxSiyCOzN、MoxSiyCOz、TaxOy、TaxOyNz、TaxCOy、TaxOyNz、AlxOy、AlxCOy、AlxOyNz、AlxCOyNz、TixOy、TixOyNz、TixCOy任何一個之組成物,或其組合,其中字尾x、y和z為自然數並定義個別元素的原子數目。 The semi-translucent material may preferably be a material having molybdenum, niobium, tantalum, tungsten, aluminum, chromium, lanthanum, zirconium, vanadium, nickel, niobium, cobalt, titanium as one of main elements, or may be a combination. The material is mixed with at least two or more elements, or at least one of Cox, Ox, Nx, or a single primary element material or a combination material. It may be from a group including Cr x O y , Cr x CO y , Cr x O y N z , Si x O y , Si x O y N z , Si x CO y , Si x CO y N z , Mo x Si y , Mo x O y , Mo x O y N z , Mo x CO y , MO x O y N z , Mo x Si y O z , Mo x Si y O z N Mo x Si y CO z N, Mo x Si y CO z , Ta x O y , Ta x O y N z , Ta x CO y , Ta x O y N z , Al x O y , Al x CO y , Al x O y N z , Al x CO A composition of any one of y N z , Ti x O y , Ti x O y N z , Ti x CO y , or a combination thereof, wherein the suffixes x, y, and z are natural numbers and define the number of atoms of the individual elements.
以下,將解說有關於第四步驟(S4)的內容,其中包括有多重 半調部H所形成三個或以上的半透光部之製程。 Hereinafter, the content of the fourth step (S4) will be explained, including multiple The halftone portion H forms a process of forming three or more semi-transmissive portions.
更明確言之,雖然形成多重半調部的方法可以經由使用於第三步驟S3中填充半透光材料於狹縫式光阻隔牆121之製程而作變化性運用,本實施例將介紹使用單一製程與使用光阻以實施有個別不同透光率的多重半透光部之製程。 More specifically, although the method of forming the multiple half-tone portion can be variably utilized by the process of filling the semi-transmissive material in the slit-type photoresist wall 121 in the third step S3, this embodiment will introduce a single use. The process and the use of photoresist to implement a process of multiple semi-transmissive portions having individual different transmittances.
首先,形成於第三步驟(S3)中的光阻隔層之一上部表面塗佈有一半透光材料層140(S41),以及將一光阻150塗佈於半透光材料層140之一上部表面上。 First, an upper surface of one of the light blocking layers formed in the third step (S3) is coated with a half of the light transmissive material layer 140 (S41), and a photoresist 150 is applied to an upper portion of the semi-transmissive material layer 140. On the surface.
在一具有變化透光率的區域上施行選擇性圖形化(S43),透過圖形化圖案在半透光材料層上施行選擇性的蝕刻, 光阻被移除並且一透光部W被形成於一透明基板露出的區域,以完成僅有狹縫式光阻隔牆構成之一狹縫式半調部Z、一半調材料膜所構成之一單一半調部Y,以及狹縫式光阻隔牆與半透光材料所形成的一多重半調部之光罩(S44)。 Selective patterning is performed on a region having a varying light transmittance (S43), and selective etching is performed on the semi-transmissive material layer through the patterned pattern. The photoresist is removed and a light-transmissive portion W is formed on a region where the transparent substrate is exposed to complete one of the slit-type half-adjusting portion Z and the half-tone material film formed by only the slit-type light-blocking wall. A single half adjustment portion Y, and a multiple half-tone portion mask formed by the slit type barrier wall and the semi-transmissive material (S44).
圖10為依據本發明另一實施例之多重半調式光罩的重要部分結構示意圖。 FIG. 10 is a schematic structural view of an important part of a multiple half-tone mask according to another embodiment of the present invention.
如圖10所繪示,根據本發明的半調式光罩可藉由如下程序而得以完成:藉由在一露出的透明基板110上形成一透光部W,並形成一結構其具有三個或以上部且個別有不同可被控制的透光率,其中形成僅由一狹縫式光阻隔牆所構成之一狹縫式半調部Z、一半調材料膜層143所構成之一單一半調部Y,以及狹縫式光阻隔牆與一半透光材料所形成的一多重半調部X。 As shown in FIG. 10, the halftone mask according to the present invention can be completed by forming a light transmitting portion W on an exposed transparent substrate 110 and forming a structure having three or The above part and each of the plurality of differently controllable light transmittances, wherein one of the slit type halftone portion Z and the half tone material film layer 143 formed by only one slit type barrier wall is formed. Part Y, and a multiple half-tone portion X formed by the slit-type photoresist wall and the half-transmissive material.
亦即,如圖10中所示,如果透光部W有100%透光率的話,狹縫式半調部Z、單一半調部Y和多重半調部X分別有相互不同的透光率,且照射光線根據曝光可以有不同的波段。雖然沒有限制,一般來說照射光線具有的波段範圍在300nm至440nm之間。 That is, as shown in FIG. 10, if the light transmitting portion W has 100% transmittance, the slit halftone portion Z, the single half adjustment portion Y, and the multiple half adjustment portion X have mutually different light transmittances, respectively. And the illumination light can have different wavelength bands according to the exposure. Although not limited, in general, the illumination light has a wavelength range between 300 nm and 440 nm.
只要部分的照射光線可透射其間之任何材料都可以作為半透光部,且雖然沒有透光量的限制,但最好10%至99%的照射光線可被控制。 Any material that can be partially transmitted by the irradiation light can be used as the semi-transmissive portion, and although there is no limitation on the amount of light transmission, preferably 10% to 99% of the illumination light can be controlled.
很明顯地,上述不同結構的半調部可以包括至少一個或以上的多重半調部,並可以更改為不同數量和結構性設計。 It will be apparent that the halftones of the different structures described above may include at least one or more multiple halftones and may be modified to different numbers and structural designs.
根據目前實施例之光罩結構可以使用本身能夠完全阻隔光線之光阻隔層120,並根據本實施例製造工序,光阻隔層120具有一半透光材料層144於其上。此外,狹縫式光阻隔牆121也可具有一半透光材料層142於其上。這是因為本實施例包含了用以填充半透光材料層在狹縫式光阻隔牆的離散間距中之一堆疊製程。 According to the reticle structure of the present embodiment, the light-blocking layer 120, which is itself capable of completely blocking light, can be used, and according to the manufacturing process of the present embodiment, the light-blocking layer 120 has a half-transmissive material layer 144 thereon. In addition, the slit type photoresist wall 121 may have a half of the light transmissive material layer 142 thereon. This is because the present embodiment includes a stacking process for filling the semi-transmissive material layer in discrete pitches of the slit-type photoresist walls.
特別的是,多重半調部X經由一結構所形成,其中一狹縫式光阻隔牆被插入到一單一半調部以形成具有不同透光率之複合半透光部,藉此除了單一半調部與狹縫式半調部外還能夠增加一個調整透光率的區域,因此設計的自由度和針對缺陷方面的透光率校正自由度可大幅提昇,促進了改良製程良率,縮短了製程時間和提高曝光後產品品質。 In particular, the multiple half-tone portion X is formed by a structure in which a slit-type light-blocking wall is inserted into a single half-tone portion to form a composite semi-transmissive portion having different light transmittances, thereby eliminating the single half. The adjustment portion and the slit halftone portion can also add a region for adjusting the light transmittance, so that the degree of freedom in design and the degree of freedom in correcting the transmittance for defects can be greatly improved, which improves the process yield and shortens the process. Process time and improved product quality after exposure.
本發明適用於產業在於,細微圖案的圖案密度得以被調整以提昇使用一狹縫式半透光部、一堆疊式半透光部或其組合部所形 成之半調式光罩中的透光率調整效率。 The present invention is applicable to the industry in that the pattern density of the fine pattern is adjusted to enhance the shape of a slit-type semi-transmissive portion, a stacked semi-transmissive portion, or a combination thereof. Transmittance adjustment efficiency in a half-tone mask.
另一產業應用性在於,半透光區域之透光率能夠藉由圖案密度的調整而準確地被控制無需仰賴分開的製作工序。 Another industry application is that the light transmittance of the semi-transmissive region can be accurately controlled by the adjustment of the pattern density without relying on separate manufacturing processes.
再一產業應用性在於,一多重半調式光罩,在狹縫式半透光部的離散間距中填設有半透光材料以建構出一個能夠控制三個或更多之相互不同透光率的結構。 Another industry application is that a multiple half-tone mask is filled with a semi-transparent material in a discrete pitch of the slit-type semi-transmissive portion to construct a three- or more mutually different light transmission. The structure of the rate.
進一產業應用性在於,能夠藉由透過在狹縫中的繞射現象所控制的透光率提供一高品質多重半調式光罩,並經由一半透光材料層以大幅提昇設計自由度以及針對缺陷的透光率修正自由度,有助於改進製程良率、縮短製程週期及曝光後提昇產品品質。 The application in the industry is to provide a high-quality multi-half-type reticle by controlling the transmittance through the diffraction phenomenon in the slit, and to greatly improve the design freedom and the defect through the half-transmissive material layer. The transmittance correction degree of freedom helps to improve process yield, shorten process cycle and improve product quality after exposure.
1‧‧‧透明基板 1‧‧‧Transparent substrate
2‧‧‧光阻隔部 2‧‧‧Light barrier
3‧‧‧透光部 3‧‧‧Transmission Department
4‧‧‧半透光部 4‧‧‧ semi-transmission department
11‧‧‧透明基板 11‧‧‧Transparent substrate
12‧‧‧光阻絕層 12‧‧‧Light barrier
13‧‧‧透光部 13‧‧‧Transmission Department
14‧‧‧狹縫式圖案 14‧‧‧Slit pattern
110‧‧‧透明基板 110‧‧‧Transparent substrate
120‧‧‧光阻隔層 120‧‧‧Light barrier
121‧‧‧狹縫式光阻隔牆 121‧‧‧Slit type barrier wall
122‧‧‧透光部 122‧‧‧Transmission Department
123‧‧‧半透光部 123‧‧‧ semi-transmission department
130‧‧‧光阻 130‧‧‧Light resistance
131‧‧‧圖形化圖案 131‧‧‧ Graphical patterns
140‧‧‧半透光材料層 140‧‧‧Translucent material layer
141‧‧‧半透光材料 141‧‧‧Translucent material
142‧‧‧半透光材料層 142‧‧‧ semi-transparent material layer
143‧‧‧半調材料膜層 143‧‧‧ halftone material film
144‧‧‧半透光材料層 144‧‧‧ semi-transparent material layer
150‧‧‧光阻 150‧‧‧Light resistance
200‧‧‧基板 200‧‧‧Substrate
210‧‧‧半透光層 210‧‧‧ semi-transparent layer
220‧‧‧光阻隔層 220‧‧‧Light barrier
230‧‧‧光阻 230‧‧‧Light resistance
240‧‧‧半透光膜層 240‧‧‧ semi-transparent film
250‧‧‧光阻 250‧‧‧Light resistance
A‧‧‧半透光區 A‧‧‧ semi-transparent area
B‧‧‧半透光區 B‧‧‧ semi-transparent area
C‧‧‧半調式光罩 C‧‧‧ half-tone mask
PR‧‧‧感光材料 PR‧‧‧Photosensitive materials
S1‧‧‧間距 S1‧‧‧ spacing
S2‧‧‧間距 S2‧‧‧ spacing
S3‧‧‧間距 S3‧‧‧ spacing
Sn‧‧‧間距 Sn‧‧‧ spacing
X1‧‧‧線寬 X1‧‧‧ line width
X2‧‧‧線寬 X2‧‧‧ line width
X3‧‧‧線寬 X3‧‧‧ line width
X4‧‧‧線寬 X4‧‧‧ line width
Xn‧‧‧線寬 Xn‧‧‧ line width
H‧‧‧多重半調部 H‧‧‧Multiple halftones
W‧‧‧透光部 W‧‧‧Transmission Department
X‧‧‧多重半調部 X‧‧‧Multiple halftones
Y‧‧‧單一半調部 Y‧‧‧ single half adjustment
Z‧‧‧狹縫式半調部 Z‧‧‧Slit half-tone
圖1和2為根據習知技術之半調式光罩與灰階光罩之示意圖。 1 and 2 are schematic views of a halftone reticle and a gray scale reticle according to the prior art.
圖3和4為說明依照細微圖案之光學透光率調整原理之示意圖。 3 and 4 are schematic views illustrating the principle of optical transmittance adjustment in accordance with a fine pattern.
圖5為用以製作本發明的一實施例之製程流程圖。 Figure 5 is a flow diagram of a process for making an embodiment of the present invention.
圖6和7為依據圖5製程所製作的半調式光罩之圖案密度調整的透光率變化數值圖。 6 and 7 are numerical values of transmittance change of the pattern density adjustment of the halftone mask produced according to the process of Fig. 5.
圖8和9為依據本發明另一實施例之半調式光罩的生產製程流程圖和製程圖。 8 and 9 are flowcharts and process diagrams of a manufacturing process of a half-tone mask according to another embodiment of the present invention.
圖10為依據本發明另一實施例之多重半調式光罩的重要部分結構示意圖。 FIG. 10 is a schematic structural view of an important part of a multiple half-tone mask according to another embodiment of the present invention.
110‧‧‧透明基板 110‧‧‧Transparent substrate
120‧‧‧光阻隔層 120‧‧‧Light barrier
121‧‧‧狹縫式光阻隔牆 121‧‧‧Slit type barrier wall
140‧‧‧半透光材料層 140‧‧‧Translucent material layer
141‧‧‧半透光材料 141‧‧‧Translucent material
142‧‧‧半透光材料層 142‧‧‧ semi-transparent material layer
143‧‧‧半調材料膜層 143‧‧‧ halftone material film
W‧‧‧透光部 W‧‧‧Transmission Department
X‧‧‧多重半調部 X‧‧‧Multiple halftones
Y‧‧‧單一半調部 Y‧‧‧ single half adjustment
Z‧‧‧狹縫式半調部 Z‧‧‧Slit half-tone
Claims (11)
Applications Claiming Priority (2)
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KR1020090044350A KR20100125574A (en) | 2009-05-21 | 2009-05-21 | Half tone mask having multi half permeation part and manufacturing method of the same |
KR1020090098717A KR101168409B1 (en) | 2009-10-16 | 2009-10-16 | Photo mask having multi half permeation part and Method for manufacturing thereof |
Publications (2)
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TW201107876A TW201107876A (en) | 2011-03-01 |
TWI431409B true TWI431409B (en) | 2014-03-21 |
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TW099116369A TWI431409B (en) | 2009-05-21 | 2010-05-21 | Half tone mask having multi half permeation part and manufacturing method of the same |
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JP (1) | JP2012527639A (en) |
CN (1) | CN102439519B (en) |
TW (1) | TWI431409B (en) |
WO (1) | WO2010134779A2 (en) |
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TWI805612B (en) * | 2017-11-14 | 2023-06-21 | 日商阿爾貝克成膜股份有限公司 | Mask blank, half-tone mask, method of manufacturing mask blank, and method of manufacturing half-tone mask |
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CN102645839B (en) * | 2011-06-15 | 2013-11-27 | 北京京东方光电科技有限公司 | Mask plate and manufacturing method thereof |
JP6076593B2 (en) * | 2011-09-30 | 2017-02-08 | Hoya株式会社 | Multi-tone photomask for manufacturing display device, multi-tone photomask manufacturing method for display device manufacturing, pattern transfer method, and thin-film transistor manufacturing method |
CN104267518B (en) * | 2014-09-24 | 2016-02-03 | 深圳市华星光电技术有限公司 | Display panels and manufacture method thereof |
JP6322607B2 (en) * | 2015-07-30 | 2018-05-09 | Hoya株式会社 | Multi-tone photomask for manufacturing display device, multi-tone photomask manufacturing method for display device manufacturing, and thin-film transistor manufacturing method |
CN106125500B (en) * | 2016-08-31 | 2020-02-07 | 深圳市华星光电技术有限公司 | Photomask and preparation method of black light resistance spacing layer |
CN106371243A (en) * | 2016-11-15 | 2017-02-01 | 深圳市华星光电技术有限公司 | Display substrate and manufacturing method thereof |
CN109188854B (en) * | 2018-10-18 | 2020-06-09 | 合肥鑫晟光电科技有限公司 | Mask plate, display substrate, manufacturing method of display substrate and display device |
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US5543253A (en) * | 1994-08-08 | 1996-08-06 | Electronics & Telecommunications Research Inst. | Photomask for t-gate formation and process for fabricating the same |
KR100215850B1 (en) * | 1996-04-12 | 1999-08-16 | 구본준 | Half-tone phase shift mask and fabrication method thereof |
KR100618811B1 (en) * | 2001-03-20 | 2006-08-31 | 삼성전자주식회사 | Phase shifting mask for manufacturing semiconductor device and fabricating method thereof |
JP2003255510A (en) * | 2002-03-01 | 2003-09-10 | Hitachi Ltd | Method for manufacturing electronic device |
US7001694B2 (en) * | 2002-04-30 | 2006-02-21 | Matsushita Electric Industrial Co., Ltd. | Photomask and method for producing the same |
KR100848815B1 (en) * | 2004-11-08 | 2008-07-28 | 엘지마이크론 주식회사 | Half tone mask and fabricating method and flat panel displayq |
KR100802450B1 (en) * | 2006-04-12 | 2008-02-13 | 엘지마이크론 주식회사 | Half tone mask having multi half permeation part and method for manufacturing thereof |
KR20080000446A (en) * | 2006-06-27 | 2008-01-02 | 주식회사 하이닉스반도체 | Exposure with multi-transmission rate filter |
JP5228390B2 (en) * | 2006-07-21 | 2013-07-03 | 大日本印刷株式会社 | Gradation mask |
CN101438386B (en) * | 2007-05-11 | 2012-03-07 | Lg伊诺特有限公司 | Intermediate tone mask with a plurality of semi-permeation parts and method of manufacturing the same |
JP4930324B2 (en) * | 2007-10-29 | 2012-05-16 | セイコーエプソン株式会社 | Thin film transistor manufacturing method |
JP5035537B2 (en) * | 2007-10-31 | 2012-09-26 | 大日本印刷株式会社 | Gradation mask defect correction method and gradation mask |
JP5372403B2 (en) * | 2008-05-01 | 2013-12-18 | Hoya株式会社 | Multi-tone photomask and pattern transfer method |
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2010
- 2010-05-20 WO PCT/KR2010/003214 patent/WO2010134779A2/en active Application Filing
- 2010-05-20 CN CN201080022197.9A patent/CN102439519B/en active Active
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TWI805612B (en) * | 2017-11-14 | 2023-06-21 | 日商阿爾貝克成膜股份有限公司 | Mask blank, half-tone mask, method of manufacturing mask blank, and method of manufacturing half-tone mask |
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WO2010134779A3 (en) | 2011-02-17 |
CN102439519B (en) | 2014-07-23 |
TW201107876A (en) | 2011-03-01 |
WO2010134779A2 (en) | 2010-11-25 |
CN102439519A (en) | 2012-05-02 |
JP2012527639A (en) | 2012-11-08 |
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