WO2010126665A3 - Doping of semiconductor layer for improved efficiency of semiconductor structures - Google Patents

Doping of semiconductor layer for improved efficiency of semiconductor structures Download PDF

Info

Publication number
WO2010126665A3
WO2010126665A3 PCT/US2010/028384 US2010028384W WO2010126665A3 WO 2010126665 A3 WO2010126665 A3 WO 2010126665A3 US 2010028384 W US2010028384 W US 2010028384W WO 2010126665 A3 WO2010126665 A3 WO 2010126665A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor
semiconductor layer
doping
improved efficiency
semiconductor material
Prior art date
Application number
PCT/US2010/028384
Other languages
French (fr)
Other versions
WO2010126665A2 (en
Inventor
Kishore Kamath
Alan R. Davies
Anders Olsson
Original Assignee
Abound Solar, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/433,595 external-priority patent/US20100279493A1/en
Priority claimed from US12/433,583 external-priority patent/US20100276785A1/en
Application filed by Abound Solar, Inc. filed Critical Abound Solar, Inc.
Publication of WO2010126665A2 publication Critical patent/WO2010126665A2/en
Publication of WO2010126665A3 publication Critical patent/WO2010126665A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/065—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the graded gap type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Photovoltaic Devices (AREA)

Abstract

A system and method for variable doping within a semiconductor structure for improved efficiency is described. One embodiment includes a method for forming a semiconductor structure, the method comprising forming a first semiconductor layer, wherein the first semiconductor layer comprises a first semiconductor material, and forming a second semiconductor layer on the first semiconductor layer, wherein the second semiconductor layer comprises a second semiconductor material, wherein the second semiconductor material is an oppositely-typed semiconductor material from the first semiconductor material, and wherein the second semiconductor layer comprises a first region adjacent to the first semiconductor layer, wherein the first region comprises second semiconductor material, and a second region adjacent to the first region, wherein the second region comprises intentionally doped second semiconductor material to increase a built-in potential of the semiconductor structure.
PCT/US2010/028384 2009-04-30 2010-03-24 Doping of semiconductor layer for improved efficiency of semiconductor structures WO2010126665A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12/433,583 2009-04-30
US12/433,595 US20100279493A1 (en) 2009-04-30 2009-04-30 Doping of semiconductor layer for improved efficiency of semiconductor structures
US12/433,595 2009-04-30
US12/433,583 US20100276785A1 (en) 2009-04-30 2009-04-30 Doping of semiconductor layer for improved efficiency of semiconductor structures

Publications (2)

Publication Number Publication Date
WO2010126665A2 WO2010126665A2 (en) 2010-11-04
WO2010126665A3 true WO2010126665A3 (en) 2011-01-13

Family

ID=43032737

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/028384 WO2010126665A2 (en) 2009-04-30 2010-03-24 Doping of semiconductor layer for improved efficiency of semiconductor structures

Country Status (1)

Country Link
WO (1) WO2010126665A2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63169772A (en) * 1987-01-07 1988-07-13 Mitsubishi Electric Corp Manufacture of gaas solar cell
JPH03285368A (en) * 1990-04-02 1991-12-16 Hitachi Cable Ltd Gaas solar cell
JPH04245683A (en) * 1991-01-31 1992-09-02 Tonen Corp Manufacture of solar cell

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63169772A (en) * 1987-01-07 1988-07-13 Mitsubishi Electric Corp Manufacture of gaas solar cell
JPH03285368A (en) * 1990-04-02 1991-12-16 Hitachi Cable Ltd Gaas solar cell
JPH04245683A (en) * 1991-01-31 1992-09-02 Tonen Corp Manufacture of solar cell

Also Published As

Publication number Publication date
WO2010126665A2 (en) 2010-11-04

Similar Documents

Publication Publication Date Title
WO2012057517A3 (en) Compound semiconductor device and method for manufacturing a compound semiconductor
WO2011110869A3 (en) Photosensitive solid state heterojunction device
WO2011075228A3 (en) Isolation for nanowire devices
WO2011140273A3 (en) Photovoltaic devices and associated methods
WO2012021227A3 (en) Heterojunction solar cell
WO2012054504A3 (en) Thermoelectric apparatus and applications thereof
WO2012109050A3 (en) Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same
WO2012074872A3 (en) Silicon and silicon germanium nanowire structures
WO2013009007A3 (en) Optical member, display device having the same and method of fabricating the same
WO2009002040A3 (en) Semiconductor light emitting device and method of fabricating the same
WO2012037536A3 (en) Packaging to reduce stress on microelectromechanical systems
WO2012040080A3 (en) Microelectronic transistor having an epitaxial graphene channel layer
WO2011109058A3 (en) Method of fabricating a back-contact solar cell and device thereof
WO2011109146A3 (en) Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures
WO2013032701A3 (en) Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods
WO2013032233A3 (en) Graphene-based laminate including doped polymer layer
WO2013032691A3 (en) Engineered substrates for semiconductor devices and associated systems and methods
SG155877A1 (en) Integrated circuit system employing sacrificial spacers
WO2011040786A3 (en) Solar photovoltaic device and a production method for the same
WO2011043610A3 (en) Photovoltaic power-generating apparatus and method for manufacturing same
WO2012088481A3 (en) Heterojunction microwire array semiconductor devices
WO2012012154A3 (en) Method of fabricating isolated capacitors and structure thereof
WO2012138903A3 (en) Dual active layers for semiconductor devices and methods of manufacturing the same
GB2517855A (en) Double layer interleaved p-n diode modulator
WO2013109677A3 (en) Photovoltaic device having an absorber multilayer and method of manufacturing the same

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10770096

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10770096

Country of ref document: EP

Kind code of ref document: A2