WO2010116553A1 - Chip fuse and method of manufacturing same - Google Patents

Chip fuse and method of manufacturing same Download PDF

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Publication number
WO2010116553A1
WO2010116553A1 PCT/JP2009/067700 JP2009067700W WO2010116553A1 WO 2010116553 A1 WO2010116553 A1 WO 2010116553A1 JP 2009067700 W JP2009067700 W JP 2009067700W WO 2010116553 A1 WO2010116553 A1 WO 2010116553A1
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WO
WIPO (PCT)
Prior art keywords
film
fuse
chip
forming
glass
Prior art date
Application number
PCT/JP2009/067700
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French (fr)
Japanese (ja)
Inventor
篤 平泉
立樹 平野
幸司 中西
Original Assignee
釜屋電機株式会社
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Application filed by 釜屋電機株式会社 filed Critical 釜屋電機株式会社
Priority to JP2009550138A priority Critical patent/JP4460647B1/en
Priority to CN200980000469.2A priority patent/CN101933113B/en
Publication of WO2010116553A1 publication Critical patent/WO2010116553A1/en
Priority to HK11101990.5A priority patent/HK1148109A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H69/00—Apparatus or processes for the manufacture of emergency protective devices
    • H01H69/02—Manufacture of fuses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
    • H01H85/02—Details
    • H01H85/04—Fuses, i.e. expendable parts of the protective device, e.g. cartridges
    • H01H85/041—Fuses, i.e. expendable parts of the protective device, e.g. cartridges characterised by the type
    • H01H85/0411—Miniature fuses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
    • H01H85/02—Details
    • H01H85/04—Fuses, i.e. expendable parts of the protective device, e.g. cartridges
    • H01H85/05—Component parts thereof
    • H01H85/055—Fusible members
    • H01H85/08—Fusible members characterised by the shape or form of the fusible member
    • H01H85/10—Fusible members characterised by the shape or form of the fusible member with constriction for localised fusing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
    • H01H85/02—Details
    • H01H85/04—Fuses, i.e. expendable parts of the protective device, e.g. cartridges
    • H01H85/05—Component parts thereof
    • H01H85/165—Casings
    • H01H85/17—Casings characterised by the casing material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
    • H01H85/02—Details
    • H01H85/04—Fuses, i.e. expendable parts of the protective device, e.g. cartridges
    • H01H85/041—Fuses, i.e. expendable parts of the protective device, e.g. cartridges characterised by the type
    • H01H85/0411—Miniature fuses
    • H01H2085/0414—Surface mounted fuses

Definitions

  • the present invention relates to a chip-type fuse for protecting a circuit against an abnormal current in a circuit such as an integrated circuit and a method for manufacturing the same.
  • a fuse film in which a fusing narrow part is formed in a central part on a base glass film provided on an insulating substrate which is an alumina ceramic substrate, and surface electrodes are formed at both ends thereof Further, a protective film is formed on the entire surface of the fuse film.
  • a protective film for example, as shown in FIG. 4, a fuse film 103 having a fusing narrow portion 106 is formed on a glass glaze film 102 as a glaze film provided on the entire upper surface of the insulating substrate 101.
  • Patent Document 1 As shown in FIG.
  • Patent Document 2 there is also known one in which the entire surface of the fuse film 103 on the base glass grace film 102 is coated with a protective film 105 of a resin layer. Furthermore, as shown in FIG. 6, there is a type in which the entire surface of the fuse film 103 is covered with a glass film 107 along the shape of the fuse film 103, and the entire surface thereof is covered with a resin layer as a protective film 108 (Patent Document 3).
  • Patent Document 1 since the entire surface of the fuse film 103 is largely covered with the protective film of the glass film 104, the fuse film 103 is not blown instantaneously, the internal resistance value increases, and the initially planned resistance It is difficult to protect the entire circuit with values.
  • Patent Document 2 since a resin layer is employed as the protective film, the internal resistance value does not increase as in the invention of Patent Document 1, but the fusing characteristics do not increase, and therefore fusing is not performed instantaneously.
  • the invention of Patent Document 3 employs a configuration in which the entire surface of the fuse film 103 is covered with a glass film and a resin layer, so that an increase in internal resistance value is suppressed and a fusing characteristic is also improved.
  • the object of the present invention is to maintain the same fusing characteristics as the fuse described in Patent Document 3, to sufficiently reduce the increase in internal resistance, and to sufficiently prevent explosion and scattering of the glass film even when a large current flows.
  • Another object of the present invention is to provide a chip-type fuse that can be prevented.
  • Another object of the present invention is to provide a chip-type fuse manufacturing method capable of easily and industrially producing the chip-type fuse of the present invention described above.
  • an insulating substrate having a glaze layer, a fuse film having a fusing narrow portion provided on the glaze layer, a surface electrode formed on both ends of the upper surface of the fuse film, and provided on at least the upper surface of the fuse film
  • a glass film an overcoat film made of a resin layer covering the glass film and the fuse film provided with the glass film, and an end face electrode
  • a chip-type fuse having a structure in which a glass film is provided on the upper surface portion of the fuse film in which the surface electrode is not formed and an overcoat film is in contact with a side surface of the fuse film.
  • the step (f) is divided along one of the vertical and horizontal slits of the collective insulating substrate, and the end face electrode is formed in the step (g) and the step (g).
  • a method for manufacturing a chip-type fuse which includes a step (h) in which each chip is obtained by being divided along the other slit of the collective insulating substrate.
  • the upper surface of the fuse film including the melted narrow portion is protected with a glass film, and the side surface is protected with an overcoat film made of a resin layer.
  • the glass on the top surface of the fuse film can be maintained even when a large current flows by adopting a configuration that can maintain the fusing characteristics, reduce the internal resistance value, and lower the melting point of the glass film below that of the glaze layer.
  • the film can be more easily melted, and the explosion and scattering of the glass film can be sufficiently prevented. Therefore, the chip-type fuse of the present invention sufficiently protects the entire circuit against a current exceeding a specific value, and is excellent in durability and safety.
  • the manufacturing method of the present invention includes the step (e), the chip-type fuse of the present invention can be manufactured easily and efficiently industrially, and further, the conventional product shown in FIG. Rather than forming a glass film around the fuse film and then forming a resin layer that is an overcoat film, the thickness of the glass film will be even on the fuse film, improving the uniformity of the quality of the chip-type fuse. Can do.
  • FIG. 3 is a cross-sectional view of the chip-type fuse of the present invention along AA in FIG. 2.
  • FIG. 3 is a cross-sectional view taken along the line BB in FIG.
  • FIG. 2 is a cross-sectional view taken along the line CC of FIG. It is sectional drawing corresponding to FIG. 3 of the conventional chip-type fuse. It is sectional drawing corresponding to FIG. 3 of the other conventional chip-type fuse. It is sectional drawing corresponding to FIG. 3 of another conventional chip-type fuse.
  • FIGS. 1 denotes an insulating substrate.
  • a glaze layer 2 is formed on the entire upper surface of the insulating substrate 1, and the longitudinal direction is the same length as that of the glaze layer on the glaze layer and the width direction is located slightly inward from both ends.
  • a fuse film 3 having a fusing narrow portion 6 at the center is overlaid.
  • the insulating substrate 1 for example, alumina ceramic substrate, alumina nitride substrate, steatite ceramic substrate composed mainly of MgO ⁇ SiO 2, including but forsterite ceramic substrate composed mainly of 2MgO ⁇ SiO 2, the It is preferable to use an alumina ceramic substrate that can exhibit the effects of the invention.
  • the glaze layer 2 include glass in which glassy components such as SiO 2 , BaO, CaO, Al 2 O 3 , B 2 O 3 , and ZrO 2 are combined, for example, SiO 2 —Al 2 O 3 —CaO glass. If necessary, a black inorganic pigment having a spinel structure can be contained.
  • a front electrode 7 having the same width as that of the fuse film 3 is provided on both ends of the fuse film 3.
  • 2 is a glass film 8 formed on the upper surface of the fuse film 3.
  • the glass film 8 is partially overlapped with the surface electrode 7 as shown in FIGS. Yes.
  • the glass film 8 is formed of a glassy component in the same manner as the glaze layer 2 and is a material lower than the melting point of the glaze layer 2 in order to prevent explosion and scattering of the glass film even when a large current flows. Is preferably formed.
  • it is preferably formed of SiO 2 —Bi 2 O 3 —B 2 O 3 glass or lead borosilicate glass.
  • the glass film 8 and the fuse film 3 provided with the glass film 8 are covered with an overcoat film 9 of a resin layer.
  • a glass film 8 is provided on the upper surface portion of the fuse film 3 where the surface electrode 7 is not formed, and an overcoat film 9 is provided on the side surface of the fuse film 3.
  • the resin layer for forming the overcoat film 9 can be formed of heat resistance, for example, a silicone resin or an epoxy resin.
  • a back electrode 7 ′ can be provided on the back surface of the insulating substrate 1 so as to oppose the front electrode 7 as shown in FIG. 1, and the front electrode 7 and the back electrode 7 ′ are provided.
  • An end face electrode 10 and a terminal electrode 11 are provided at both ends of the insulating substrate 1 so as to cover a part of the end face electrode 10.
  • the manufacturing method of the present invention includes a step (a) of preparing a collective insulating substrate having a plurality of slits for obtaining a plurality of chips by division in a vertical and horizontal direction and a chip forming portion having a glaze layer provided on the surface.
  • a collective insulating substrate a known substrate conventionally used for manufacturing a chip-type fuse can be used.
  • a collective insulating substrate manufactured by providing desired vertical and horizontal slits with laser light or the like can be used.
  • the manufacturing method of the present invention includes a step (b) of forming a fuse film on the glaze layer in order to form a fuse film on each chip forming portion of the collective insulating substrate.
  • the fuse film can be formed by a known method, for example, using a metal organic paste containing a noble metal such as gold or silver, and having the same length as the length of the chip formation portion in the longitudinal direction. Now, it can be formed by a method of screen printing with a pattern or the like that is slightly shorter in the width direction and firing. Firing conditions can be appropriately selected depending on the type of metal organic paste and the like.
  • the manufacturing method of the present invention includes a step (c) of forming surface electrodes on both upper end portions of the fuse film in each chip forming portion.
  • the formation of the surface electrode can be performed by a known method or the like, for example, a material for forming the surface electrode, for example, so that the width is the same at both ends of the fuse film in each fuse forming portion, for example, A thick silver paste or the like can be formed by screen printing and baking.
  • the firing conditions can be appropriately selected according to the type of the material for forming the surface electrode, but in order to maintain the accuracy of the fuse film formed in the step (b), it is lower than the firing temperature in the step (b). It is preferable to carry out at temperature.
  • the manufacturing method of the present invention includes a step (d) of forming a glass film on at least the fuse film on which no surface electrode is formed.
  • the glass film is formed by a method in which a paste containing a glassy component is screen-printed at least on the fuse film or over the fuse film and a part of the surface electrode and fired. can do.
  • the firing conditions can be appropriately selected according to the type of material forming the glass film, etc., but in order to maintain the accuracy of the fuse film formed in step (b), the firing temperature is higher than the firing temperature in step (b). It is preferable to carry out at a low temperature and at a temperature comparable to the firing temperature of the front electrode formed in step (c).
  • the melting point of the material forming the glass film is preferably lower than the melting point of the glaze layer of the collective insulating substrate prepared in step (a) in order to further improve the effects of the present invention.
  • the glaze layer is formed of a SiO 2 —Al 2 O 3 —CaO glass paste
  • the glass film can be formed using a lead borosilicate glass paste having a lower melting point.
  • the manufacturing method of the present invention includes a step (e) of partially removing a portion where the glass film is laminated on the fuse film to simultaneously form a fusing narrow portion and exposing a side surface of the fuse film at the removed portion.
  • a step (e) of partially removing a portion where the glass film is laminated on the fuse film to simultaneously form a fusing narrow portion and exposing a side surface of the fuse film at the removed portion Including.
  • the fuse film and the glass film are simultaneously removed, and a fusing narrow portion 6 is provided at the center of the fuse film 3 as shown in FIG. 2, thereby forming the fuse film 3 as shown in FIG.
  • This is a step of forming a structure in which the glass film 8 is formed in contact with the upper surface, and the side surface of the fuse film 3 at the removed portion is exposed.
  • Such removal can be performed by, for example, a laser method or a sandblast method.
  • the manufacturing method of the present invention includes a step (f) of forming an overcoat film by leaving a part of both ends of the surface electrode and covering the glass film and the side surfaces of the exposed fuse film with a resin layer.
  • step (f) as shown in FIG. 3, the side surface of the fuse film 3 having the glass film 8 on the upper surface portion of the fuse film 3 where the front electrode 7 is not formed, and a part of the front electrode 7 and the glass film 8 is a step of forming an overcoat film 9 that protects the whole 8.
  • the overcoat film has a heat resistance, for example, a resin layer such as a silicone resin or an epoxy resin can be formed by a known method.
  • the manufacturing method of the present invention includes a step (g) of forming an end face electrode by dividing along one of the vertical and horizontal slits of the collective insulating substrate to form the end face electrode.
  • Step (g) is a step of performing primary division of the collective insulating substrate and forming end face electrodes by, for example, a known method.
  • the back electrode 7 ′ may be formed as shown in FIG. 1 before or after the primary division of the collective insulating substrate and before the end face electrodes are formed. it can.
  • the back electrode can be formed using, for example, an alloy of nickel and chromium or a conductive resin paste by sputtering or screen printing.
  • the manufacturing method of the present invention includes a step (h) in which the chips are obtained by being divided along the other slit of the collective insulating substrate, which is not divided in the step (g).
  • Step (h) is a step of finally dividing each chip forming portion formed on the collective insulating substrate individually by secondary division.
  • the step (h) in order to mount the chip-type fuse on the circuit, for example, each layer made of copper, nickel, tin and the like is formed by plating, and the end face electrode 10 is covered as shown in FIG. Thus, the terminal electrode 11 can be provided.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Fuses (AREA)

Abstract

Provided is a chip fuse which maintains the same level of fusing characteristics as conventional ones and is highly safe in that an increase in an internal resistance value can be sufficiently decreased.  The chip fuse comprises an insulating substrate provided with a glaze layer, a fuse film provided with a narrow fusing portion provided on the glaze layer, surface electrodes formed at both end portions of the upper surface of the fuse film, a glass film provided on at least the upper surface of the fuse film, an overcoat film consisting of a resin layer which covers the glass film and the fuse film provided with the glass film, and end surface electrodes, and has a structure in which the glass film is provided in contact with the portion of the upper surface of the fuse film on which no surface electrode is formed and the overcoat film is provided in contact with the side surfaces of the fuse film.

Description

チップ型ヒューズとその製造方法Chip-type fuse and manufacturing method thereof
　本発明は、集積回路等の回路における異常電流に対して、回路を保護するためのチップ型ヒューズ及びその製造方法に関する。 The present invention relates to a chip-type fuse for protecting a circuit against an abnormal current in a circuit such as an integrated circuit and a method for manufacturing the same.
　一般に、チップ型ヒューズとしは、アルミナのセラミック基板である絶縁基板上に設けた下地ガラス膜の上に、中央部に溶断狭小部を形成したヒューズ膜と、その両端に表電極とを形成し、さらにヒューズ膜上全面に保護膜を形成している。
　この保護膜としては、例えば、図４に示すように、絶縁基板１０１の全上面に設けたグレーズ膜としてのガラスグレーズ膜１０２の上に、溶断狭小部１０６を有するヒューズ膜１０３を形成し、その上に前記グレーズ膜よりやや内側の上面に全体が四角形のガラス膜１０４を保護膜として形成したものがある（特許文献１）。また、図５に示すように、下地ガラスグレース膜１０２上のヒューズ膜１０３の全面を樹脂層の保護膜１０５で被膜したものも知られている（特許文献２）。
　さらに、図６に示すように、ヒューズ膜１０３の形状に沿って、その全面をガラス膜１０７で覆い、その上の全体を保護膜１０８として樹脂層で被覆したものもある（特許文献３）。 In general, as a chip-type fuse, a fuse film in which a fusing narrow part is formed in a central part on a base glass film provided on an insulating substrate which is an alumina ceramic substrate, and surface electrodes are formed at both ends thereof, Further, a protective film is formed on the entire surface of the fuse film.
As this protective film, for example, as shown in FIG. 4, a fuse film 103 having a fusing narrow portion 106 is formed on a glass glaze film 102 as a glaze film provided on the entire upper surface of the insulating substrate 101. There is an upper glass film 104 formed as a protective film on the upper surface slightly inside the glaze film (Patent Document 1). In addition, as shown in FIG. 5, there is also known one in which the entire surface of the fuse film 103 on the base glass grace film 102 is coated with a protective film 105 of a resin layer (Patent Document 2).
Furthermore, as shown in FIG. 6, there is a type in which the entire surface of the fuse film 103 is covered with a glass film 107 along the shape of the fuse film 103, and the entire surface thereof is covered with a resin layer as a protective film 108 (Patent Document 3).
　しかしながら、特許文献１の発明では、ヒューズ膜１０３の全面を大きくガラス膜１０４の保護膜で覆っているので、ヒューズ膜１０３の溶断が瞬時に行われず、内部抵抗値が上昇し、当初予定した抵抗値で回路全体を保護することが困難である。
　特許文献２の発明では、保護膜として樹脂層を採用するので、特許文献１の発明のような内部抵抗値の上昇は少ないが、溶断特性も上昇せず、したがって、溶断が瞬時に行われないという欠点がある。
　特許文献３の発明では、ヒューズ膜１０３の全面をガラス膜及び樹脂層で被覆する構成を採用するので、内部抵抗値の上昇を抑え、溶断特性も向上する。しかし、このような構成のヒューズに非常に大きな電流が流れと、溶断狭小部を含むヒューズ膜１０３を覆うガラス膜が爆発、飛散するという問題が生じる場合がある。 However, in the invention of Patent Document 1, since the entire surface of the fuse film 103 is largely covered with the protective film of the glass film 104, the fuse film 103 is not blown instantaneously, the internal resistance value increases, and the initially planned resistance It is difficult to protect the entire circuit with values.
In the invention of Patent Document 2, since a resin layer is employed as the protective film, the internal resistance value does not increase as in the invention of Patent Document 1, but the fusing characteristics do not increase, and therefore fusing is not performed instantaneously. There is a drawback.
The invention of Patent Document 3 employs a configuration in which the entire surface of the fuse film 103 is covered with a glass film and a resin layer, so that an increase in internal resistance value is suppressed and a fusing characteristic is also improved. However, there may be a problem that a very large current flows through the fuse having such a configuration, and the glass film covering the fuse film 103 including the fusing narrow portion explodes and scatters.
特開平９－０６３４５４号公報Japanese Patent Laid-Open No. 9-063454 特開２００８－０５２９８９号公報JP 2008-052989 A 特開平１０－０５０１９８号公報Japanese Patent Laid-Open No. 10-050198
　本発明の課題は、特許文献３に記載のヒューズと同程度の溶断特性を維持し、内部抵抗値の上昇を十分低減でき、しかも大きな電流が流れた場合にもガラス膜の爆発及び飛散を十分に防止することが可能なチップ型ヒューズを提供することにある。
　本発明の別の課題は、上記本発明のチップ型ヒューズを、容易に、かつ工業的にも効率良く生産することができるチップ型ヒューズの製造方法を提供することにある。 The object of the present invention is to maintain the same fusing characteristics as the fuse described in Patent Document 3, to sufficiently reduce the increase in internal resistance, and to sufficiently prevent explosion and scattering of the glass film even when a large current flows. Another object of the present invention is to provide a chip-type fuse that can be prevented.
Another object of the present invention is to provide a chip-type fuse manufacturing method capable of easily and industrially producing the chip-type fuse of the present invention described above.
　本発明によれば、グレーズ層を有する絶縁基板と、該グレーズ層上に設けた溶断狭小部を有するヒューズ膜と、該ヒューズ膜の上面両端部分に形成した表電極と、少なくともヒューズ膜上面に設けたガラス膜と、該ガラス膜及び該ガラス膜を設けたヒューズ膜を覆う樹脂層からなるオーバーコート膜と、端面電極とを備え、
　表電極が形成されていない前記ヒューズ膜上面部分にはガラス膜が、ヒューズ膜の側面にはオーバーコート膜が接して設けられた構造を有するチップ型ヒューズが提供される。 According to the present invention, an insulating substrate having a glaze layer, a fuse film having a fusing narrow portion provided on the glaze layer, a surface electrode formed on both ends of the upper surface of the fuse film, and provided on at least the upper surface of the fuse film A glass film, an overcoat film made of a resin layer covering the glass film and the fuse film provided with the glass film, and an end face electrode,
There is provided a chip-type fuse having a structure in which a glass film is provided on the upper surface portion of the fuse film in which the surface electrode is not formed and an overcoat film is in contact with a side surface of the fuse film.
　また本発明によれば、分割により複数のチップを得るためのスリットを縦横に複数有し、かつ表面にグレーズ層を設けたチップ形成部分が集合した集合絶縁基板を準備する工程(a)と、各チップ形成部分上にヒューズ膜を形成するために、前記グレーズ層上にヒューズ膜を形成する工程(b)と、各チップ形成部分のヒューズ膜の上面両端部分に表電極を形成する工程(c)と、少なくとも表電極を形成していない前記ヒューズ膜上にガラス膜を形成する工程(d)と、前記ヒューズ膜上にガラス膜を積層した箇所を部分的に同時に除去して溶断狭小部を形成すると共に、除去した箇所のヒューズ膜の側面を露出させる工程(e)と、前記表電極の両端を一部残し、前記ガラス膜及び前記露出したヒューズ膜の側面を樹脂層により被覆してオーバーコート膜を形成する工程(f)と、端面電極を形成するために、集合絶縁基板の縦横のスリットの一方に沿って分割し、端面電極を形成する工程(g)と、工程(g)で分割していない、集合絶縁基板の他方のスリットに沿って分割して各チップを得る工程(h)を含む、チップ型ヒューズの製造方法が提供される。 Further, according to the present invention, a step (a) of preparing a collective insulating substrate in which a plurality of slits for obtaining a plurality of chips by division are provided in a vertical and horizontal direction, and a chip forming portion in which a glaze layer is provided on the surface is assembled. Forming a fuse film on the glaze layer in order to form a fuse film on each chip forming portion (b), and forming a surface electrode on both ends of the upper surface of the fuse film in each chip forming portion (c) ) And at least a step of forming a glass film on the fuse film on which the surface electrode is not formed, and a portion where the glass film is laminated on the fuse film is partially removed at the same time so that a fusing narrow portion is formed. Forming and removing the side surface of the fuse film at the removed portion, leaving part of both ends of the surface electrode, and covering the glass film and the exposed side surface of the fuse film with a resin layer Coat film In order to form an end face electrode, the step (f) is divided along one of the vertical and horizontal slits of the collective insulating substrate, and the end face electrode is formed in the step (g) and the step (g). There is provided a method for manufacturing a chip-type fuse, which includes a step (h) in which each chip is obtained by being divided along the other slit of the collective insulating substrate.
　本発明のチップ型ヒューズでは、溶断狭小部を含むヒューズ膜の上面をガラス膜で保護し、その側面を樹脂層からなるオーバーコート膜で保護するので、特許文献３に記載のヒューズと同程度の溶断特性が維持でき、内部抵抗値を低減することができ、かつガラス膜の融点をグレーズ層の融点より低くする構成等を採用することにより、大電流が流れた場合にもヒューズ膜上面のガラス膜がより溶融し易くなり、ガラス膜の爆発及び飛散を十分に防止することができる。従って、本発明のチップ型ヒューズは、特定値を超える電流に対して回路全体を十分に保護し、かつ耐久性及び安全性に優れる。 In the chip-type fuse of the present invention, the upper surface of the fuse film including the melted narrow portion is protected with a glass film, and the side surface is protected with an overcoat film made of a resin layer. The glass on the top surface of the fuse film can be maintained even when a large current flows by adopting a configuration that can maintain the fusing characteristics, reduce the internal resistance value, and lower the melting point of the glass film below that of the glaze layer. The film can be more easily melted, and the explosion and scattering of the glass film can be sufficiently prevented. Therefore, the chip-type fuse of the present invention sufficiently protects the entire circuit against a current exceeding a specific value, and is excellent in durability and safety.
　本発明の製造方法では、特に、工程(e)を含むので、本発明のチップ型ヒューズを容易に、工業的にも効率良く製造することができ、更に、従来品である図６に示す、ヒューズ膜の周囲にガラス膜を形成してからオーバーコート膜である樹脂層を形成するよりも、ガラス膜の肉厚がヒューズ膜上に均等になり、チップ型ヒューズの品質の均等性を高めることができる。 In particular, since the manufacturing method of the present invention includes the step (e), the chip-type fuse of the present invention can be manufactured easily and efficiently industrially, and further, the conventional product shown in FIG. Rather than forming a glass film around the fuse film and then forming a resin layer that is an overcoat film, the thickness of the glass film will be even on the fuse film, improving the uniformity of the quality of the chip-type fuse. Can do.
本発明のチップ型ヒューズの図２におけるＡ－Ａ断面図である。FIG. 3 is a cross-sectional view of the chip-type fuse of the present invention along AA in FIG. 2. 図１のＢ－Ｂ断面図である。FIG. 3 is a cross-sectional view taken along the line BB in FIG. 図１のＣ－Ｃ断面図である。FIG. 2 is a cross-sectional view taken along the line CC of FIG. 従来のチップ型ヒューズの図３に対応する断面図である。It is sectional drawing corresponding to FIG. 3 of the conventional chip-type fuse. 従来の他のチップ型ヒューズの図３に対応する断面図である。It is sectional drawing corresponding to FIG. 3 of the other conventional chip-type fuse. 従来の別のチップ型ヒューズの図３に対応する断面図である。It is sectional drawing corresponding to FIG. 3 of another conventional chip-type fuse.
　以下に、図面を参照して本発明の好ましい形態を説明するが、本発明はこれらに限定されない。
　本発明のチップ型ヒューズとしては、図１乃至図３に示されるものが例示できる。１は絶縁基板であり、該絶縁基板１上の上全面には、グレーズ層２が形成され、該グレーズ層上には長手方向がグレーズ層と同じ長さで幅方向を両端から若干内側に位置する、中央部に溶断狭小部６を有するヒューズ膜３が重層されている。 Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited thereto.
Examples of the chip-type fuse of the present invention include those shown in FIGS. Reference numeral 1 denotes an insulating substrate. A glaze layer 2 is formed on the entire upper surface of the insulating substrate 1, and the longitudinal direction is the same length as that of the glaze layer on the glaze layer and the width direction is located slightly inward from both ends. A fuse film 3 having a fusing narrow portion 6 at the center is overlaid.
　前記絶縁基板１としては、例えば、アルミナセラミック基板、窒化アルミナ基板、ＭｇＯ・ＳｉＯ2を主成分とするステアタイトセラミック基板、２ＭｇＯ・ＳｉＯ2を主成分とするフォルステライトセラミック基板が挙げられるが、本発明の効果をより発揮することが可能なアルミナセラミック基板の使用が好ましい。
　前記グレーズ層２は、SiO2、BaO、CaO、Al2O3、B2O3、ZrO2等のガラス質成分を組み合わせたガラス、例えば、SiO2－Al2O3－CaO系ガラスが挙げられ、また必要によりスピネル構造を有する黒色無機顔料を含有させることもできる。 As the insulating substrate 1, for example, alumina ceramic substrate, alumina nitride substrate, steatite ceramic substrate composed mainly of MgO · SiO 2, including but forsterite ceramic substrate composed mainly of 2MgO · SiO 2, the It is preferable to use an alumina ceramic substrate that can exhibit the effects of the invention.
Examples of the glaze layer 2 include glass in which glassy components such as SiO 2 , BaO, CaO, Al 2 O 3 , B 2 O 3 , and ZrO 2 are combined, for example, SiO 2 —Al 2 O 3 —CaO glass. If necessary, a black inorganic pigment having a spinel structure can be contained.
　ヒューズ膜３の両端部上には、該ヒューズ膜３と同じ幅の表電極７が設けられている。また、図２に示す斜線部分は、ヒューズ膜３の上面に形成されたガラス膜８であり、該ガラス膜８は、図１及び２に示されるように一部が表電極７に重層されている。
　ガラス膜８は、グレーズ層２と同様にガラス質成分で形成され、大電流が流れた場合にも、ガラス膜の爆発及び飛散をより十分に防止するために、グレーズ層２の融点より低い材料で形成されることが好ましい。例えばＳiＯ2－Ｂi2Ｏ3－Ｂ2Ｏ3系のガラスやホウ珪酸鉛系ガラスにより形成されるのが好ましい。 A front electrode 7 having the same width as that of the fuse film 3 is provided on both ends of the fuse film 3. 2 is a glass film 8 formed on the upper surface of the fuse film 3. The glass film 8 is partially overlapped with the surface electrode 7 as shown in FIGS. Yes.
The glass film 8 is formed of a glassy component in the same manner as the glaze layer 2 and is a material lower than the melting point of the glaze layer 2 in order to prevent explosion and scattering of the glass film even when a large current flows. Is preferably formed. For example, it is preferably formed of SiO 2 —Bi 2 O 3 —B 2 O 3 glass or lead borosilicate glass.
　前記ガラス膜８及び該ガラス膜８を設けたヒューズ膜３は、樹脂層のオーバーコート膜９で被覆されている。ここで、図３に示されるように、表電極７が形成されていない前記ヒューズ膜３上面部分にはガラス膜８が、ヒューズ膜３の側面にはオーバーコート膜９が接して設けられている。
　オーバーコート膜９を形成する樹脂層としては、耐熱性を有する、例えば、シリコーン樹脂、エポキシ樹脂により形成することができる。 The glass film 8 and the fuse film 3 provided with the glass film 8 are covered with an overcoat film 9 of a resin layer. Here, as shown in FIG. 3, a glass film 8 is provided on the upper surface portion of the fuse film 3 where the surface electrode 7 is not formed, and an overcoat film 9 is provided on the side surface of the fuse film 3. .
The resin layer for forming the overcoat film 9 can be formed of heat resistance, for example, a silicone resin or an epoxy resin.
　本発明のチップ型ヒューズにおいては、図１に示されるように表電極７に対抗するように、絶縁基板１の裏面に裏電極７’を設けることができ、該表電極７及び裏電極７’の一部を被覆するように絶縁基板１の両端部には、端面電極１０、並びに該端面電極１０を被覆するように端子電極１１が設けられている。 In the chip-type fuse of the present invention, a back electrode 7 ′ can be provided on the back surface of the insulating substrate 1 so as to oppose the front electrode 7 as shown in FIG. 1, and the front electrode 7 and the back electrode 7 ′ are provided. An end face electrode 10 and a terminal electrode 11 are provided at both ends of the insulating substrate 1 so as to cover a part of the end face electrode 10.
　つぎに、本発明のチップ型ヒューズの製造方法を以下に説明する。
　本発明の製造方法は、分割により複数のチップを得るためのスリットを縦横に複数有し、かつ表面にグレーズ層を設けたチップ形成部分が集合した集合絶縁基板を準備する工程(a)を含む。
　このような集合絶縁基板は、従来、チップ型ヒューズの製造に使用されている公知の基板を用いることができる。また、絶縁基板上にグレーズ層を形成するためのグレーズ用ペーストを印刷し、焼成した後、レーザー光等により所望の縦横のスリットを設けて製造された集合絶縁基板を用いることもできる。 Next, a manufacturing method of the chip type fuse of the present invention will be described below.
The manufacturing method of the present invention includes a step (a) of preparing a collective insulating substrate having a plurality of slits for obtaining a plurality of chips by division in a vertical and horizontal direction and a chip forming portion having a glaze layer provided on the surface. .
As such a collective insulating substrate, a known substrate conventionally used for manufacturing a chip-type fuse can be used. In addition, after the glaze paste for forming the glaze layer is printed on the insulating substrate and baked, a collective insulating substrate manufactured by providing desired vertical and horizontal slits with laser light or the like can be used.
　本発明の製造方法は、前記集合絶縁基板の各チップ形成部分上にヒューズ膜を形成するために、前記グレーズ層上にヒューズ膜を形成する工程(b)を含む。
　工程(b)において、ヒューズ膜の形成は、公知の方法等により行うことができ、例えば、金または銀等の貴金属を含む金属有機物ペーストを用いて、チップ形成部分の長手方向の長さと同じ長さで、幅方向をやや短く内側に位置するようなパターン等によりスクリーン印刷し、焼成する方法により形成することができる。焼成条件は、金属有機物ペーストの種類等に応じて適宜選択することができる。 The manufacturing method of the present invention includes a step (b) of forming a fuse film on the glaze layer in order to form a fuse film on each chip forming portion of the collective insulating substrate.
In the step (b), the fuse film can be formed by a known method, for example, using a metal organic paste containing a noble metal such as gold or silver, and having the same length as the length of the chip formation portion in the longitudinal direction. Now, it can be formed by a method of screen printing with a pattern or the like that is slightly shorter in the width direction and firing. Firing conditions can be appropriately selected depending on the type of metal organic paste and the like.
　本発明の製造方法は、各チップ形成部分のヒューズ膜の上面両端部分に表電極を形成する工程(c)を含む。
　工程(c)において、表電極のの形成は、公知の方法等により行うことができ、例えば、各ヒューズ形成部分におけるヒューズ膜の両端に幅を同じくするように、表電極の形成材料、例えば、厚膜銀ペースト等をスクリーン印刷し、焼成する方法により形成することができる。焼成条件は、表電極の形成材料の種類等に応じて適宜選択することができるが、工程(b)で形成したヒューズ膜の精度を維持するために、工程(b)における焼成温度よりも低い温度で行うことが好ましい。 The manufacturing method of the present invention includes a step (c) of forming surface electrodes on both upper end portions of the fuse film in each chip forming portion.
In the step (c), the formation of the surface electrode can be performed by a known method or the like, for example, a material for forming the surface electrode, for example, so that the width is the same at both ends of the fuse film in each fuse forming portion, for example, A thick silver paste or the like can be formed by screen printing and baking. The firing conditions can be appropriately selected according to the type of the material for forming the surface electrode, but in order to maintain the accuracy of the fuse film formed in the step (b), it is lower than the firing temperature in the step (b). It is preferable to carry out at temperature.
　本発明の製造方法は、少なくとも表電極を形成していない前記ヒューズ膜上にガラス膜を形成する工程(d)を含む。
　工程(d)において、ガラス膜の形成は、ガラス質成分を含むペーストを、少なくともヒューズ膜上に、もしくは該ヒューズ膜及び表電極の一部に重層するようにスクリーン印刷し、焼成する方法により形成することができる。焼成条件は、ガラス膜を形成する材料の種類等に応じて適宜選択することができるが、工程(b)で形成したヒューズ膜の精度を維持するために、工程(b)における焼成温度よりも低い温度で、また、工程(c)で形成した表電極の焼成温度と同程度の温度で行うことが好ましい。
　また、ガラス膜を形成する材料の融点は、本発明の効果をより改善するために、工程(a)で準備した集合絶縁基板のグレーズ層の融点よりも低融点とすることが好ましい。例えば、グレーズ層を、SiO2－Al2O3－CaO系ガラスペーストにより形成した場合には、ガラス膜は、これより低融点のホウ珪酸鉛系ガラスペーストを用いて形成することができる。 The manufacturing method of the present invention includes a step (d) of forming a glass film on at least the fuse film on which no surface electrode is formed.
In step (d), the glass film is formed by a method in which a paste containing a glassy component is screen-printed at least on the fuse film or over the fuse film and a part of the surface electrode and fired. can do. The firing conditions can be appropriately selected according to the type of material forming the glass film, etc., but in order to maintain the accuracy of the fuse film formed in step (b), the firing temperature is higher than the firing temperature in step (b). It is preferable to carry out at a low temperature and at a temperature comparable to the firing temperature of the front electrode formed in step (c).
The melting point of the material forming the glass film is preferably lower than the melting point of the glaze layer of the collective insulating substrate prepared in step (a) in order to further improve the effects of the present invention. For example, when the glaze layer is formed of a SiO 2 —Al 2 O 3 —CaO glass paste, the glass film can be formed using a lead borosilicate glass paste having a lower melting point.
　本発明の製造方法は、前記ヒューズ膜上にガラス膜を積層した箇所を部分的に同時に除去して溶断狭小部を形成すると共に、除去した箇所のヒューズ膜の側面を露出させる工程(e)を含む。
　工程(e)は、ヒューズ膜とガラス膜とを同時に除去して、図２に示すようなヒューズ膜３の中央部に溶断狭小部６を設け、これにより、図３に示すようにヒューズ膜３の上面にはガラス膜８が接して形成され、上記除去した箇所のヒューズ膜３の側面が露出される構成を形成する工程である。
　上記ヒューズ膜とガラス膜とを同時に除去することにより、上記所望の構成を容易に、かつ効率的に形成することができる。このような除去は、例えば、レーザー法や、サンドブラスト法により実施することができる。 The manufacturing method of the present invention includes a step (e) of partially removing a portion where the glass film is laminated on the fuse film to simultaneously form a fusing narrow portion and exposing a side surface of the fuse film at the removed portion. Including.
In the step (e), the fuse film and the glass film are simultaneously removed, and a fusing narrow portion 6 is provided at the center of the fuse film 3 as shown in FIG. 2, thereby forming the fuse film 3 as shown in FIG. This is a step of forming a structure in which the glass film 8 is formed in contact with the upper surface, and the side surface of the fuse film 3 at the removed portion is exposed.
By removing the fuse film and the glass film at the same time, the desired configuration can be easily and efficiently formed. Such removal can be performed by, for example, a laser method or a sandblast method.
　本発明の製造方法は、前記表電極の両端を一部残し、前記ガラス膜及び前記露出したヒューズ膜の側面を樹脂層により被覆してオーバーコート膜を形成する工程(f)を含む。
　工程(f)は、図３に示されるように、表電極７が形成されていない前記ヒューズ膜３上面部分にガラス膜８を有するヒューズ膜３の側面、並びに表電極７の一部とガラス膜８全体とを保護するオーバーコート膜９を形成する工程である。
　オーバーコート膜は、耐熱性を有する、例えば、シリコーン樹脂、エポキシ樹脂等の樹脂層を公知の方法等により形成することができる。 The manufacturing method of the present invention includes a step (f) of forming an overcoat film by leaving a part of both ends of the surface electrode and covering the glass film and the side surfaces of the exposed fuse film with a resin layer.
In step (f), as shown in FIG. 3, the side surface of the fuse film 3 having the glass film 8 on the upper surface portion of the fuse film 3 where the front electrode 7 is not formed, and a part of the front electrode 7 and the glass film 8 is a step of forming an overcoat film 9 that protects the whole 8.
The overcoat film has a heat resistance, for example, a resin layer such as a silicone resin or an epoxy resin can be formed by a known method.
　本発明の製造方法は、端面電極を形成するために、集合絶縁基板の縦横のスリットの一方に沿って分割し、端面電極を形成する工程(g)を含む。
　工程(g)は、集合絶縁基板の一次分割を実施し、例えば、公知の方法で端面電極を形成する工程である。この工程(g)においては、例えば、集合絶縁基板の一次分割前、もしくは該一次分割後であって、端面電極の形成前に、図１に示されるように裏電極７’を形成することもできる。
　裏電極の形成は、例えば、スパッタ法やスクリーン印刷法により、ニッケルとクロムの合金や、導電性樹脂ペーストを用いて行うことができる。 The manufacturing method of the present invention includes a step (g) of forming an end face electrode by dividing along one of the vertical and horizontal slits of the collective insulating substrate to form the end face electrode.
Step (g) is a step of performing primary division of the collective insulating substrate and forming end face electrodes by, for example, a known method. In this step (g), for example, the back electrode 7 ′ may be formed as shown in FIG. 1 before or after the primary division of the collective insulating substrate and before the end face electrodes are formed. it can.
The back electrode can be formed using, for example, an alloy of nickel and chromium or a conductive resin paste by sputtering or screen printing.
　本発明の製造方法は、工程(g)で分割していない、集合絶縁基板の他方のスリットに沿って分割して各チップを得る工程(h)を含む。
　工程(h)は、集合絶縁基板に形成された各チップ形成用部分を二次分割により最終的に個々に分割する工程である。
　工程(h)の後には、チップ型ヒューズを回路に実装するために、例えば、銅、ニッケル、及び錫等からなる各層をめっきにより形成し、図１に示されるように端面電極１０を被覆するように端子電極１１を設けることができる。 The manufacturing method of the present invention includes a step (h) in which the chips are obtained by being divided along the other slit of the collective insulating substrate, which is not divided in the step (g).
Step (h) is a step of finally dividing each chip forming portion formed on the collective insulating substrate individually by secondary division.
After the step (h), in order to mount the chip-type fuse on the circuit, for example, each layer made of copper, nickel, tin and the like is formed by plating, and the end face electrode 10 is covered as shown in FIG. Thus, the terminal electrode 11 can be provided.
　１　絶縁基板
　２　グレーズ層
　３　ヒューズ膜
　６　溶断狭小部
　７　表電極
　７’裏電極
　８　ガラス層
　９　オーバーコート膜
１０　端面電極
１１　端子電極 DESCRIPTION OF SYMBOLS 1 Insulating substrate 2 Glaze layer 3 Fuse film 6 Fusing narrow part 7 Front electrode 7 'Back electrode 8 Glass layer 9 Overcoat film 10 End surface electrode 11 Terminal electrode

Claims (3)

  1. 　グレーズ層を有する絶縁基板と、該グレーズ層上に設けた溶断狭小部を有するヒューズ膜と、該ヒューズ膜の上面両端部分に形成した表電極と、少なくともヒューズ膜上面に設けたガラス膜と、該ガラス膜及び該ガラス膜を設けたヒューズ膜を覆う樹脂層からなるオーバーコート膜と、端面電極とを備え、
    　表電極が形成されていない前記ヒューズ膜上面部分にはガラス膜が、ヒューズ膜の側面にはオーバーコート膜が接して設けられた構造を有するチップ型ヒューズ。     An insulating substrate having a glaze layer, a fuse film having a fusing narrow portion provided on the glaze layer, surface electrodes formed on both ends of the upper surface of the fuse film, a glass film provided on at least the upper surface of the fuse film, An overcoat film made of a resin layer covering a glass film and a fuse film provided with the glass film, and an end face electrode;
    A chip-type fuse having a structure in which a glass film is provided on an upper surface portion of the fuse film where a surface electrode is not formed, and an overcoat film is provided on a side surface of the fuse film.
  2. 　ガラス膜が、グレーズ層の融点より低い材料で形成されている請求項１記載のチップ型ヒューズ。 2. The chip-type fuse according to claim 1, wherein the glass film is formed of a material having a melting point lower than that of the glaze layer.
  3. 　分割により複数のチップを得るためのスリットを縦横に複数有し、かつ表面にグレーズ層を設けたチップ形成部分が集合した集合絶縁基板を準備する工程(a)と、
    　各チップ形成部分上にヒューズ膜を形成するために、前記グレーズ層上にヒューズ膜を形成する工程(b)と、
    　各チップ形成部分のヒューズ膜の上面両端部分に表電極を形成する工程(c)と、
    　少なくとも表電極を形成していない前記ヒューズ膜上にガラス膜を形成する工程(d)と、
    　前記ヒューズ膜上にガラス膜を積層した箇所を部分的に同時に除去して溶断狭小部を形成すると共に、除去した箇所のヒューズ膜の側面を露出させる工程(e)と、
    　前記表電極の両端を一部残し、前記ガラス膜及び前記露出したヒューズ膜の側面を樹脂層により被覆してオーバーコート膜を形成する工程(f)と、
    　端面電極を形成するために、集合絶縁基板の縦横のスリットの一方に沿って分割し、端面電極を形成する工程(g)と、
    　工程(g)で分割していない、集合絶縁基板の他方のスリットに沿って分割して各チップを得る工程(h)を含む、チップ型ヒューズの製造方法。     A step (a) of preparing a collective insulating substrate in which a plurality of slits for obtaining a plurality of chips by division are vertically and horizontally and a chip forming portion having a glaze layer provided on the surface is assembled;
    Forming a fuse film on the glaze layer in order to form a fuse film on each chip forming portion (b);
    A step (c) of forming surface electrodes on both ends of the upper surface of the fuse film of each chip forming portion;
    A step (d) of forming a glass film on the fuse film not forming at least a surface electrode;
    A step (e) of exposing a side surface of the fuse film at the removed portion, while simultaneously forming a portion where the glass film is laminated on the fuse film and simultaneously forming a fusing narrow portion;
    (F) leaving a part of both ends of the front electrode, and covering the side surfaces of the glass film and the exposed fuse film with a resin layer;
    In order to form the end face electrode, dividing along one of the vertical and horizontal slits of the collective insulating substrate, forming the end face electrode (g),
    A method for manufacturing a chip-type fuse, comprising the step (h) of obtaining each chip by dividing along the other slit of the collective insulating substrate, which is not divided in the step (g).
PCT/JP2009/067700 2009-03-30 2009-10-13 Chip fuse and method of manufacturing same WO2010116553A1 (en)

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CN103996583B (en) * 2013-03-18 2017-02-08 南京萨特科技发展有限公司 Micro paster type high voltage-resistant protection element and preparation method thereof
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CN110828243B (en) * 2019-11-06 2021-04-30 南京隆特电子有限公司 Thin film type fuse and manufacturing method thereof
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