JP7220344B2 - circuit protection element - Google Patents

circuit protection element Download PDF

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JP7220344B2
JP7220344B2 JP2018126475A JP2018126475A JP7220344B2 JP 7220344 B2 JP7220344 B2 JP 7220344B2 JP 2018126475 A JP2018126475 A JP 2018126475A JP 2018126475 A JP2018126475 A JP 2018126475A JP 7220344 B2 JP7220344 B2 JP 7220344B2
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layer
circuit protection
insulating substrate
protection element
nickel
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JP2020009531A (en
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智幸 鷲崎
幸二郎 中村
正治 田中
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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本発明は、過電流が流れると溶断して各種電子機器を保護する回路保護素子に関する。 BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a circuit protection element that fuses and protects various electronic devices when overcurrent flows.

従来のこの種の回路保護素子は、図3に示すように、絶縁基板1と、この絶縁基板1の上面の両端部に設けられた一対の上面電極2と、この一対の上面電極2を橋絡するエレメント部3と、このエレメント部3と前記絶縁基板1との間に形成された下地層4と、絶縁基板1の両端部に形成されかつ前記エレメント部3の上面と接続された端面電極5と、前記エレメント部3を保護する絶縁層6とを備えていた。 As shown in FIG. 3, this type of conventional circuit protection element comprises: an insulating substrate 1; an underlying layer 4 formed between the element portion 3 and the insulating substrate 1; end face electrodes formed at both ends of the insulating substrate 1 and connected to the upper surface of the element portion 3; 5 and an insulating layer 6 for protecting the element portion 3 .

なお、この出願の発明に関連する先行技術文献としては、例えば、特許文献1が知られている。 For example, Patent Document 1 is known as a prior art document related to the invention of this application.

特開2001-273847号公報Japanese Unexamined Patent Application Publication No. 2001-273847

上記従来の構成においては、エレメント部3に硫化物を生成しやすい銀などの金属を使用した場合、硫化雰囲気中で回路保護素子を使用すると、銀が硫化因子と化学反応を起こして硫化物を形成するため、抵抗値が変動等し、耐硫化特性が悪化するという課題を有していた。 In the conventional structure described above, when a metal such as silver that easily generates sulfide is used in the element portion 3, when the circuit protection element is used in a sulfurizing atmosphere, silver causes a chemical reaction with the sulfide factor to generate sulfide. However, there is a problem that the resistance value fluctuates and the anti-sulfurization property deteriorates.

本発明は、上記課題を解決するもので、耐硫化特性を向上させることができる回路保護素子を提供することを目的とするものである。 SUMMARY OF THE INVENTION It is an object of the present invention to solve the above problems and to provide a circuit protection element capable of improving anti-sulfurization characteristics.

第1の態様に係る回路保護素子は、絶縁基板と、前記絶縁基板の上面の両端部に設けられた一対の上面電極と、前記一対の上面電極と電気的に接続されたエレメント部と、前記エレメント部を覆う絶縁層とを備え、前記エレメント部は前記絶縁基板の上面側から比抵抗が小さい順に複数の金属層を積層して構成され、下側の前記金属層の全面をその上側の前記金属層で覆うようにした。 A circuit protection element according to a first aspect includes an insulating substrate, a pair of upper surface electrodes provided on both ends of the upper surface of the insulating substrate, an element portion electrically connected to the pair of upper surface electrodes, and the and an insulating layer covering an element portion, wherein the element portion is formed by laminating a plurality of metal layers in order of decreasing specific resistance from the upper surface side of the insulating substrate, and the entire surface of the lower metal layer is covered with the upper metal layer. I covered it with a metal layer.

第2の態様に係る回路保護素子では、第1の態様において、前記金属層は、前記絶縁基板の上面側から、銀層、銅層、ニッケル層の順に構成された。 In the circuit protection element according to the second aspect, in the first aspect, the metal layer is composed of a silver layer, a copper layer, and a nickel layer in this order from the upper surface side of the insulating substrate.

第3の態様に係る回路保護素子では、第2の態様において、前記ニッケル層の表面に形成された酸化物層を覆うように前記絶縁層を配置した。 In the circuit protection element according to the third aspect, in the second aspect, the insulating layer is arranged so as to cover the oxide layer formed on the surface of the nickel layer.

以上のように本発明の回路保護素子は、エレメント部において、硫化しにくい比抵抗が大きい金属またはニッケル層をエレメント部の最上層に形成しているため、耐硫化特性を向上させることができるという効果を奏する。 As described above, in the circuit protection element of the present invention, a metal or nickel layer that is resistant to sulfurization and has a high specific resistance is formed as the uppermost layer of the element, so that the sulfurization resistance can be improved. It works.

本発明の一実施の形態における回路保護素子の断面図1 is a cross-sectional view of a circuit protection element according to one embodiment of the present invention; 同回路保護素子の一部切欠上面図Partially cutaway top view of the same circuit protection device 従来の回路保護素子の断面図Cross-sectional view of a conventional circuit protection device

図1は本発明の一実施の形態における回路保護素子の断面図、図2は同回路保護素子の主要部の一部切欠上面図を示したもので、この図1、図2に示すように、本発明の一実施の形態における回路保護素子は、絶縁基板11と、この絶縁基板11の上面の両端部に設けられた一対の上面電極12と、この一対の上面電極12を橋絡するように形成され、かつ前記一対の上面電極12と電気的に接続されたエレメント部13と、このエレメント部13と前記絶縁基板11との間に設けられた下地層14と、前記下地層14の上面に位置するエレメント部13に形成された溶断部15とを備えている。 FIG. 1 is a cross-sectional view of a circuit protection element according to an embodiment of the present invention, and FIG. 2 is a partially cutaway top view of the main part of the same circuit protection element. A circuit protection element according to an embodiment of the present invention comprises an insulating substrate 11, a pair of upper surface electrodes 12 provided at both ends of the upper surface of the insulating substrate 11, and a pair of upper surface electrodes 12 bridging the pair of upper surface electrodes 12. and electrically connected to the pair of upper surface electrodes 12, an underlying layer 14 provided between the element portion 13 and the insulating substrate 11, and the upper surface of the underlying layer 14 and a fusing portion 15 formed in the element portion 13 located at .

また、絶縁基板11の両端部にはエレメント部13の一部に重なるように銀系の材料からなる端面電極層16が形成されており、かつこの端面電極層16の表面にはめっき膜(図示せず)が形成される。さらに、端面電極層16から露出したエレメント部13上に、シリコン樹脂からなる絶縁層17が設けられている。なお、図2では、説明を簡単にするために、端面電極層16、絶縁層17を省略している。 Edge electrode layers 16 made of a silver-based material are formed on both ends of the insulating substrate 11 so as to partially overlap the element portions 13, and the surfaces of the edge electrode layers 16 are coated with a plating film (Fig. not shown) are formed. Furthermore, an insulating layer 17 made of silicone resin is provided on the element portion 13 exposed from the end face electrode layer 16 . In FIG. 2, the end face electrode layer 16 and the insulating layer 17 are omitted for simplification of explanation.

上記構成において、前記絶縁基板11は、その形状が方形状であり、そしてAlを55%~96%含有するアルミナで構成されている。 In the above configuration, the insulating substrate 11 has a square shape and is made of alumina containing 55% to 96% Al 2 O 3 .

また、前記一対の上面電極12は、絶縁基板11の上面の両端部に設けられ、かつAg等を印刷することによって形成されている。 The pair of upper surface electrodes 12 are provided on both ends of the upper surface of the insulating substrate 11 and are formed by printing Ag or the like.

そしてまた、前記エレメント部13は、絶縁基板11の少なくとも一部を覆うように形成し、下地層14および一対の上面電極12の上面に位置して設けられている。このエレメント部13は、Cr、Cu、Niの順にスパッタ、蒸着などの物理気相成長法を用いて形成された下層(以下、図示せず)と、下層の上面に、銀層13a、銅層13b、ニッケル層13cが順に形成された金属層13dとで構成されている。 Further, the element portion 13 is formed so as to cover at least a portion of the insulating substrate 11 and is positioned on the upper surfaces of the underlying layer 14 and the pair of upper surface electrodes 12 . The element portion 13 includes a lower layer (hereinafter, not shown) formed by using a physical vapor deposition method such as sputtering and vapor deposition of Cr, Cu, and Ni in this order; 13b, and a metal layer 13d on which a nickel layer 13c is sequentially formed.

銀層13aは下層を核として電気めっきを行って形成する。また、銀層13aは一対の上面電極12の全面を覆う。銅層13bは銀層13aの全面を覆い、ニッケル層13cは銅層13bの全面を覆うように、それぞれ電気めっきを行って形成する。ニッケル層13cが耐硫化特性が悪い銀層13a、銅層13bの全面を覆っているため、回路保護素子としての耐硫化特性が向上する。さらに、ニッケル層13cの全面を絶縁層17で覆っている。 The silver layer 13a is formed by electroplating using the lower layer as a nucleus. In addition, the silver layer 13 a covers the entire surface of the pair of upper electrodes 12 . The copper layer 13b is formed by electroplating so as to cover the entire surface of the silver layer 13a, and the nickel layer 13c is formed so as to cover the entire surface of the copper layer 13b. Since the nickel layer 13c covers the entire surface of the silver layer 13a and the copper layer 13b, which have poor anti-sulfurization characteristics, the anti-sulfurization characteristics of the circuit protection element are improved. Furthermore, the entire surface of the nickel layer 13c is covered with an insulating layer 17. As shown in FIG.

また、前記エレメント部13の中心部には、レーザによってトリミング溝18が2ヶ所、互いに対向するエレメント部13の側面からエレメント部13の中心方向に向かって形成され、そして、この2つのトリミング溝18で囲まれた領域が、過電流が印加されたときに溶融して断線する溶断部15となっている。 Two trimming grooves 18 are formed in the central portion of the element portion 13 by a laser from the side surfaces of the element portion 13 facing each other toward the center of the element portion 13 . A region surrounded by is a fusing portion 15 that melts and disconnects when an overcurrent is applied.

なお、トリミング溝18は図2に示すような直線状ではなく、L字状などの他の形状としてもよい。さらに、抵抗値調整用のトリミング溝を別途形成してもよい。 Note that the trimming groove 18 may have another shape such as an L shape instead of the straight shape shown in FIG. Furthermore, a trimming groove for adjusting the resistance value may be formed separately.

そしてまた、前記下地層14は、絶縁基板11の上面の中央部に設けられており、かつこの下地層14は前記一対の上面電極12間に位置するエレメント部13と絶縁基板11との間に設けられている。また、この下地層14は、SiO等からなるガラスを主成分としている。 Further, the underlying layer 14 is provided in the central portion of the upper surface of the insulating substrate 11, and the underlying layer 14 is located between the element portion 13 located between the pair of upper surface electrodes 12 and the insulating substrate 11. is provided. Further, the base layer 14 is mainly composed of glass made of SiO 2 or the like.

なお、ニッケル層13cを形成した後一定時間放置すれば、その表面にニッケルの酸化膜が形成される。そして、この酸化膜を覆うように絶縁層17を形成すれば、エレメント部13表面が金属(ニッケル層13c)の場合と比べて、エレメント部13と絶縁層17との接着性が向上する。 If the nickel layer 13c is left for a certain period of time after formation, a nickel oxide film is formed on its surface. By forming the insulating layer 17 so as to cover the oxide film, the adhesion between the element portion 13 and the insulating layer 17 is improved as compared with the case where the surface of the element portion 13 is made of metal (nickel layer 13c).

上記した本発明の一実施の形態においては、エレメント部13において硫化しにくい、すなわち比抵抗が大きい金属、特にニッケルを最上層に形成しているため、耐硫化特性を向上させることができるという効果が得られるものである。 In the above-described embodiment of the present invention, since the element portion 13 is formed of a metal that is difficult to sulfurize, that is, has a high specific resistance, particularly nickel, as the uppermost layer, the sulfuration resistance can be improved. is obtained.

このとき、最も耐硫化特性が悪い銀層13aを、エレメント部13の最下層としている。そして、エレメント部13として、耐硫化特性が悪い順(すなわち、比抵抗が低い順)、銀層13a、銅層13b、ニッケル層13cの順に積層しているため、確実に耐硫化特性を向上させることができる。 At this time, the silver layer 13 a having the worst anti-sulfurization property is the lowest layer of the element portion 13 . As the element portion 13, since the silver layer 13a, the copper layer 13b, and the nickel layer 13c are laminated in order of poor anti-sulfurization property (that is, in descending order of specific resistance), the anti-sulfurization property is reliably improved. be able to.

また、トリミング溝18をレーザによって形成する際、レーザ吸収率が大きいニッケル層13cをエレメント部13の最上層としているため、レーザのパワーを小さく設定でき、これにより、トリミング溝18形成時のエレメント部13の温度上昇を抑えることができるため、抵抗値が安定し、溶断特性が向上する。 Further, when the trimming grooves 18 are formed by a laser, the nickel layer 13c, which has a high laser absorptivity, is the uppermost layer of the element portion 13, so that the power of the laser can be set low. Since the temperature rise of 13 can be suppressed, the resistance value is stabilized and the fusing characteristics are improved.

さらに、銀層13aと銅層13bとが接しているため、過電流が流れた時に溶融した銀と銅との共晶合金が形成されるが、この合金の融点が788℃と低いことから、この合金化して溶融した銅がニッケル層13cの中に拡散することによって、エレメント部13全体の融点が低下し、これにより、短時間で溶断部15を溶断させることができる。 Furthermore, since the silver layer 13a and the copper layer 13b are in contact with each other, a eutectic alloy of molten silver and copper is formed when an overcurrent flows. This alloyed and melted copper diffuses into the nickel layer 13c, thereby lowering the melting point of the entire element portion 13, thereby allowing the fusion portion 15 to be fused in a short period of time.

本発明に係る回路保護素子は、耐硫化特性を向上させることができるという効果を有するものであり、特に過電流が流れると溶断して各種電子機器を保護する回路保護素子等において有用となるものである。 The circuit protection element according to the present invention has the effect of being able to improve anti-sulphurization characteristics, and is particularly useful as a circuit protection element that fuses when an overcurrent flows and protects various electronic devices. is.

11 絶縁基板
12 上面電極
13 エレメント部
13a 銀層
13b 銅層
13c ニッケル層
13d 金属層
17 絶縁層
REFERENCE SIGNS LIST 11 insulating substrate 12 upper surface electrode 13 element portion 13a silver layer 13b copper layer 13c nickel layer 13d metal layer 17 insulating layer

Claims (2)

絶縁基板と、前記絶縁基板の上面の両端部に設けられた一対の上面電極と、前記一対の上面電極と電気的に接続された溶断部を有するエレメント部と、前記エレメント部を覆う絶縁層とを備え、前記エレメント部は、前記絶縁基板の上面側から比抵抗が小さい銀層、銅層、ニッケル層の順に複数の金属層を積層し、前記ニッケル層を金属層の最上層とするとともに、下側の前記金属層における両端部と垂直方向の両側外側面から上面の全面にわたって上側の前記金属層で覆うようにした回路保護素子。 an insulating substrate, a pair of upper surface electrodes provided on both ends of the upper surface of the insulating substrate, an element portion having a fusing portion electrically connected to the pair of upper surface electrodes, and an insulating layer covering the element portion. wherein the element part has a plurality of metal layers stacked in order of a silver layer, a copper layer, and a nickel layer having a low specific resistance from the upper surface side of the insulating substrate, and the nickel layer is the uppermost layer of the metal layers, A circuit protection element in which the upper metal layer covers both ends of the lower metal layer, both outer side surfaces in the vertical direction, and the entire upper surface . 前記ニッケル層の表面に形成されたニッケルの酸化物層を覆うように前記絶縁層を配置した請求項1記載の回路保護素子。 2. The circuit protection element according to claim 1, wherein said insulating layer is arranged so as to cover the nickel oxide layer formed on the surface of said nickel layer.
JP2018126475A 2018-07-03 2018-07-03 circuit protection element Active JP7220344B2 (en)

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CN201920910708.9U CN209691684U (en) 2018-07-03 2019-06-17 Circuit protecting element

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011243533A (en) 2010-05-21 2011-12-01 Kyocera Corp Current fuse device and circuit board
JP2014096272A (en) 2012-11-09 2014-05-22 Panasonic Corp Circuit protection element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011243533A (en) 2010-05-21 2011-12-01 Kyocera Corp Current fuse device and circuit board
JP2014096272A (en) 2012-11-09 2014-05-22 Panasonic Corp Circuit protection element

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