WO2010107239A3 - 발광 다이오드 장치의 제조방법과 발광 다이오드 패키지 및 발광 다이오드 모듈, 그리고 이를 구비한 조명등기구 - Google Patents

발광 다이오드 장치의 제조방법과 발광 다이오드 패키지 및 발광 다이오드 모듈, 그리고 이를 구비한 조명등기구 Download PDF

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Publication number
WO2010107239A3
WO2010107239A3 PCT/KR2010/001636 KR2010001636W WO2010107239A3 WO 2010107239 A3 WO2010107239 A3 WO 2010107239A3 KR 2010001636 W KR2010001636 W KR 2010001636W WO 2010107239 A3 WO2010107239 A3 WO 2010107239A3
Authority
WO
WIPO (PCT)
Prior art keywords
light
emitting diode
chip assembly
lower mold
upper mold
Prior art date
Application number
PCT/KR2010/001636
Other languages
English (en)
French (fr)
Other versions
WO2010107239A2 (ko
Inventor
허윤수
Original Assignee
㈜알텍테크놀로지스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020100020856A external-priority patent/KR20100105388A/ko
Application filed by ㈜알텍테크놀로지스 filed Critical ㈜알텍테크놀로지스
Publication of WO2010107239A2 publication Critical patent/WO2010107239A2/ko
Publication of WO2010107239A3 publication Critical patent/WO2010107239A3/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

본 발명은 발광 다이오드 칩을 덮는 몰딩부 또는 렌즈부를 진공밀봉 방식을 이용하여 비-돔(dome)형상으로 제작하여 다양한 배광(配光)구조를 갖는 발광 다이오드 장치의 제조방법과 발광 다이오드 패키지 및 발광 다이오드 모듈에 관한 것으로서, 특히 발명의 일실시예에 따른 발광 다이오드 장치 제조방법은 적어도 하나의 발광 다이오드 칩이 실장된 칩 어셈블리를 마련하는 단계와; 상기 칩 어셈블리를 반전시켜 상부금형에 장착하고 제 1 진공 처리기에 투입시키는 단계와; 제 2 진공 처리기에 하부금형을 투입하고, 하부금형에 형성된 적어도 하나의 수지 충진부에 몰딩 수지를 충진시키는 단계와; 상기 하부금형을 제 1 진공 처리기에 투입시켜 상기 상부금형의 하방에 위치시키는 단계와; 상기 몰딩 수지가 상기 칩 어셈블리의 발광 다이오드 칩를 봉지하도록 상기 상부금형과 하부금형을 결합시키는 단계와; 상기 몰딩 수지를 경화시켜 상기 칩 어셈블리에 비-돔형의 몰딩부를 형성시키는 단계와; 상기 상부 금형 및 하부 금형에서 칩 어셈블리를 분리하는 단계를 포함한다. 특히 상기 칩 어셈블리를 분리하는 단계 이후에는 상기 칩 어셈블리를 적어도 하나 이상의 단위 패키지로 절단하는 다이싱단계를 포함한다.
PCT/KR2010/001636 2009-03-18 2010-03-17 발광 다이오드 장치의 제조방법과 발광 다이오드 패키지 및 발광 다이오드 모듈, 그리고 이를 구비한 조명등기구 WO2010107239A2 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20090023129 2009-03-18
KR10-2009-0023129 2009-03-18
KR10-2010-0020856 2010-03-09
KR1020100020856A KR20100105388A (ko) 2009-03-18 2010-03-09 발광 다이오드 장치의 제조방법과 발광 다이오드 패키지 및 발광 다이오드 모듈, 그리고 이를 구비한 조명등기구

Publications (2)

Publication Number Publication Date
WO2010107239A2 WO2010107239A2 (ko) 2010-09-23
WO2010107239A3 true WO2010107239A3 (ko) 2010-12-23

Family

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Application Number Title Priority Date Filing Date
PCT/KR2010/001636 WO2010107239A2 (ko) 2009-03-18 2010-03-17 발광 다이오드 장치의 제조방법과 발광 다이오드 패키지 및 발광 다이오드 모듈, 그리고 이를 구비한 조명등기구

Country Status (1)

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WO (1) WO2010107239A2 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8293548B2 (en) * 2009-03-04 2012-10-23 Unilumin Group Co., Ltd. LED light module for street lamp and method of manufacturing same
CN110710003B (zh) * 2018-09-04 2022-11-18 厦门市三安光电科技有限公司 一种紫外发光二极管封装结构及其制作方法
CN114284420A (zh) * 2021-12-27 2022-04-05 深圳市聚飞光电股份有限公司 发光单元及其制作方法、发光组件

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100367182B1 (ko) * 2001-01-04 2003-01-09 이성재 발광다이오드 램프
KR20070009453A (ko) * 2005-07-15 2007-01-18 하리손 도시바 라이팅구 가부시키가이샤 Ｌｅｄ 패키지 및 조명 장치
KR20080058393A (ko) * 2005-09-15 2008-06-25 매그 인스트루먼트, 인크. 규격 개선 ｌｅｄ 모듈

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100367182B1 (ko) * 2001-01-04 2003-01-09 이성재 발광다이오드 램프
KR20070009453A (ko) * 2005-07-15 2007-01-18 하리손 도시바 라이팅구 가부시키가이샤 Ｌｅｄ 패키지 및 조명 장치
KR20080058393A (ko) * 2005-09-15 2008-06-25 매그 인스트루먼트, 인크. 규격 개선 ｌｅｄ 모듈

Also Published As

Publication number Publication date
WO2010107239A2 (ko) 2010-09-23

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