WO2012165822A3 - 발광소자의 봉지재 성형장치 및 방법 - Google Patents

발광소자의 봉지재 성형장치 및 방법 Download PDF

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Publication number
WO2012165822A3
WO2012165822A3 PCT/KR2012/004186 KR2012004186W WO2012165822A3 WO 2012165822 A3 WO2012165822 A3 WO 2012165822A3 KR 2012004186 W KR2012004186 W KR 2012004186W WO 2012165822 A3 WO2012165822 A3 WO 2012165822A3
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WO
WIPO (PCT)
Prior art keywords
encapsulation material
forming
emitting device
light
resin
Prior art date
Application number
PCT/KR2012/004186
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English (en)
French (fr)
Other versions
WO2012165822A2 (ko
Inventor
신형진
홍기원
백영대
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서울반도체(주)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 서울반도체(주) filed Critical 서울반도체(주)
Priority to US14/123,638 priority Critical patent/US9818908B2/en
Publication of WO2012165822A2 publication Critical patent/WO2012165822A2/ko
Publication of WO2012165822A3 publication Critical patent/WO2012165822A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Led Device Packages (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)

Abstract

발광소자의 봉지재 성형장치가 개시된다. 상기 봉지재 성형장치는, 복수의 광반도체가 실장된 기판이 장착되는 상부 금형과; 상기 상부 금형과 마주하게 위치하는 하부 금형과; 상기 상부 금형과 상기 하부 금형 사이에 수지를 가두는 수지 가둠 공간과; 상기 지재 성형 위치에서 상기 수지 가둠 공간을 복수개로 구획하여, 상기 기판 상에 성형되는 봉지재를 복수개로 분리하는 이젝터 핀을 포함한다.
PCT/KR2012/004186 2011-06-03 2012-05-25 발광소자의 봉지재 성형장치 및 방법 WO2012165822A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/123,638 US9818908B2 (en) 2011-06-03 2012-05-25 Method and apparatus for molding encapsulant of light emitting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0053949 2011-06-03
KR1020110053949A KR101850979B1 (ko) 2011-06-03 2011-06-03 발광소자의 봉지재 성형장치 및 방법

Publications (2)

Publication Number Publication Date
WO2012165822A2 WO2012165822A2 (ko) 2012-12-06
WO2012165822A3 true WO2012165822A3 (ko) 2013-01-24

Family

ID=47260048

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/004186 WO2012165822A2 (ko) 2011-06-03 2012-05-25 발광소자의 봉지재 성형장치 및 방법

Country Status (3)

Country Link
US (1) US9818908B2 (ko)
KR (1) KR101850979B1 (ko)
WO (1) WO2012165822A2 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101494440B1 (ko) * 2013-01-23 2015-02-23 주식회사 씨티랩 반도체 소자 구조물을 제조하는 방법 및 이를 이용하는 반도체 소자 구조물
JP6842234B2 (ja) * 2015-10-13 2021-03-17 ローム株式会社 光半導体装置の製造方法および光半導体装置
KR20170092323A (ko) * 2016-02-03 2017-08-11 삼성전자주식회사 반도체 패키지의 몰딩 장치
KR102337659B1 (ko) * 2018-02-21 2021-12-09 삼성전자주식회사 금형 검사 장치 및 금형 검사 방법
US11005014B2 (en) * 2018-07-30 2021-05-11 Facebook Technologies, Llc Optics formation using pick-up tools
US20220213754A1 (en) * 2021-01-05 2022-07-07 Saudi Arabian Oil Company Downhole ceramic disk rupture by laser

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000011536A (ko) * 1998-07-10 2000-02-25 나까자와 모또요시 반도체장치제조방법및수지몰딩장치
KR20080096749A (ko) * 2006-05-17 2008-11-03 토와 가부시기가이샤 전자 부품의 수지 밀봉 성형 방법
KR20090077200A (ko) * 2008-01-10 2009-07-15 주식회사 하이닉스반도체 몰딩 장치 및 이를 이용한 반도체 패키지의 제조 방법
KR20090127296A (ko) * 2007-02-26 2009-12-10 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 형광체 타일을 갖는 ｌｅｄ 및 오버몰딩된 형광체가 포함된 렌즈

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG85653A1 (en) 1998-07-10 2002-01-15 Apic Yamada Corp Method of manufacturing semiconductor devices and resin molding machine
JP3581814B2 (ja) * 2000-01-19 2004-10-27 Ｔｏｗａ株式会社 樹脂封止方法及び樹脂封止装置
US7352011B2 (en) 2004-11-15 2008-04-01 Philips Lumileds Lighting Company, Llc Wide emitting lens for LED useful for backlighting
JP2007243146A (ja) * 2006-02-09 2007-09-20 Sharp Corp 半導体装置の製造方法、および、半導体装置の製造装置
TW200830573A (en) * 2007-01-03 2008-07-16 Harvatek Corp Mold structure for packaging light-emitting diode chip and method for packaging light-emitting diode chip

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000011536A (ko) * 1998-07-10 2000-02-25 나까자와 모또요시 반도체장치제조방법및수지몰딩장치
KR20080096749A (ko) * 2006-05-17 2008-11-03 토와 가부시기가이샤 전자 부품의 수지 밀봉 성형 방법
KR20090127296A (ko) * 2007-02-26 2009-12-10 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 형광체 타일을 갖는 ｌｅｄ 및 오버몰딩된 형광체가 포함된 렌즈
KR20090077200A (ko) * 2008-01-10 2009-07-15 주식회사 하이닉스반도체 몰딩 장치 및 이를 이용한 반도체 패키지의 제조 방법

Also Published As

Publication number Publication date
KR20120134789A (ko) 2012-12-12
US20150034984A1 (en) 2015-02-05
US9818908B2 (en) 2017-11-14
KR101850979B1 (ko) 2018-04-20
WO2012165822A2 (ko) 2012-12-06

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