WO2010105617A4 - Crucible for melting and crystallizing a metal, a semiconductor, or a metal alloy, component for a crucible base body of a crucible, and method for producing a component - Google Patents

Crucible for melting and crystallizing a metal, a semiconductor, or a metal alloy, component for a crucible base body of a crucible, and method for producing a component Download PDF

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Publication number
WO2010105617A4
WO2010105617A4 PCT/DE2010/000338 DE2010000338W WO2010105617A4 WO 2010105617 A4 WO2010105617 A4 WO 2010105617A4 DE 2010000338 W DE2010000338 W DE 2010000338W WO 2010105617 A4 WO2010105617 A4 WO 2010105617A4
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WO
WIPO (PCT)
Prior art keywords
crucible
partially
silicon nitride
wall
metal
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PCT/DE2010/000338
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German (de)
French (fr)
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WO2010105617A8 (en
WO2010105617A2 (en
WO2010105617A3 (en
Inventor
Thomas Baehr
Roel Van Loo
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Access E.V.
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Publication of WO2010105617A2 publication Critical patent/WO2010105617A2/en
Publication of WO2010105617A8 publication Critical patent/WO2010105617A8/en
Publication of WO2010105617A3 publication Critical patent/WO2010105617A3/en
Publication of WO2010105617A4 publication Critical patent/WO2010105617A4/en

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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B14/00—Crucible or pot furnaces
    • F27B14/08—Details peculiar to crucible or pot furnaces
    • F27B14/10—Crucibles
    • C—CHEMISTRY; METALLURGY
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/14—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silica
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    • C04B35/62605—Treating the starting powders individually or as mixtures
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    • C04B35/62605—Treating the starting powders individually or as mixtures
    • C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
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    • C04B35/62665—Flame, plasma or melting treatment
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
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    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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    • C30B29/06—Silicon
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    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
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    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
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    • C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3418—Silicon oxide, silicic acids, or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
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  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Silicon Compounds (AREA)
  • Ceramic Products (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

The invention relates to a crucible for melting and crystallizing a metal, a semiconductor material, or a metal alloy, wherein a crucible wall of a crucible base body is made at least partially of a crucible material comprising silicon nitride and silicon dioxide at a weight ratio of between about 1:10 and about 1:1 (Si3N4 : SiO2). The invention further relates to a component for a crucible base body of a crucible for melting and crystallizing a metal, a semiconductor material, or a metal alloy, wherein a component segment is made at least partially of a crucible material comprising silicon nitride and silicon dioxide at a weight ratio of between about 1:10 and about 1:1 (Si3N4 : SiO2), and to a method for producing a component for a crucible base of a crucible for melting and crystallizing a metal, a semiconductor material, or a metal alloy, wherein a component segment is formed at least partially of a crucible material comprising silicon nitride and silicon dioxide at a weight ratio of between about 1:10 and about 1:1 (Si3N4 : SiO2).

Claims

GEÄNDERTE ANSPRÜCHE beim Internationalen Büro eingegangen am 23. Dezember 2010 (23.12.2010) Neue Ansprüche AMENDED CLAIMS filed with the International Bureau on 23 December 2010 (23.12.2010) New claims
1. Tiegel zum Schmelzen und Kristallisieren eines Metalls, eines Halbleiterwerkstoffs oder einer Metalllegierung, bei dem eine Tiegelwandung eines Tiegelgrundkörpers zu- mindest teilweise aus einem Tiegelmaterial besteht, welches Siliziumnitrid und Siliziumdioxid im Gewichtsverhältnis zwischen etwa 1:10 und etwa 9:10 (Si3N4 : Si02) enthält. A crucible for melting and crystallizing a metal, a semiconductor material or a metal alloy, in which a crucible wall of a crucible base consists at least partially of a crucible material comprising silicon nitride and silicon dioxide in a weight ratio between about 1:10 and about 9:10 (Si 3 N 4 : Si0 2 ).
2. Tiegel nach Anspruch 1 , dadurch gekennzeichnet, dass die zumindest teilweise aus dem Tiegelmaterial bestehende Tiegelwandung wenigstens im Tiegelboden des2. crucible according to claim 1, characterized in that the at least partially consisting of the crucible material crucible wall at least in the bottom of the crucible
Tiegelgrundkörpers gebildet ist. Crucible body is formed.
3. Tiegel nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass eine Tiegelseitenwand des Tiegelgrundkörpers zumindest teilweise aus Si02 mit einer Reinheit von min- destens 99% besteht. 3. crucible according to claim 1 or 2, characterized in that a crucible side wall of the crucible base body consists at least partially of Si0 2 with a purity of at least 99%.
4. Tiegel nach mindestens einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass die zumindest teilweise aus dem Tiegelmaterial bestehende Tiegelwandung des Tiegelgrundkörpers wenigstens abschnittsweise mit einer innenseitigen und / oder einer außenseitigen Beschichtung versehen ist. 4. crucible according to at least one of the preceding claims, characterized in that the at least partially consisting of the crucible material crucible wall of the crucible base body is at least partially provided with an inside and / or outside coating.
5. Tiegel nach mindestens einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass die Tiegelwandung des Tiegelgrundkörpers zumindest teilweise vollständig aus dem Tiegelmaterial gebildet ist. 5. crucible according to at least one of the preceding claims, characterized in that the crucible wall of the crucible base body is at least partially completely formed from the crucible material.
6. Tiegel nach mindestens einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass auf der Tiegelwandung des Tiegelgrundkörpers zumindest abschnittsweise eine innenseitige Auskleidung angeordnet ist.. 6. crucible according to at least one of the preceding claims, characterized in that on the crucible wall of the crucible body at least partially an inner lining is arranged.
7. Tiegel nach mindestens einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass die Tiegelwandung des Tiegelgrundkörpers mit mehreren gefügten Wandungsbauteilen gebildet ist. 7. crucible according to at least one of the preceding claims, characterized in that the crucible wall of the crucible base body is formed with a plurality of joined wall components.
GEÄNDERTES BLATT (ARTIKEL 19) MODIFIED SHEET (ARTICLE 19)
8. Tiegel nach mindestens einem der vorangehenden Ansprüche, dadurch g e k e n n z e i c h n e t, dass die Tiegelwandung des Tiegelgrundkörpers zumindest abschnittsweise mit einem Eigenschaftsgradienten gebildet ist. 8. Crucible according to claim 1, characterized in that the crucible wall of the crucible base body is formed at least in sections with a property gradient.
9. Tiegel nach mindestens einem der vorangehenden Ansprüche, dadurch g e k e n n z e i c h n e t, dass das Siliziumnitrid und / oder das Siliziumdioxid im Tiegelmaterial eine Korngröße zwischen etwa 1 μηι und etwa 500 μιη aufweisen. 9. Crucible according to claim 1, characterized in that the silicon nitride and / or the silicon dioxide in the crucible material have a particle size of between about 1 μm and about 500 μm.
10. Bauteil für einen Tiegelgrundkörper eines Tiegels zum Schmelzen und Kristallisieren eines Metalls, eines Halbleiterwerkstoffs oder einer Metalllegierung, bei dem ein Bauteilabschnitt zumindest teilweise aus einem Tiegelmaterial besteht, welches Siliziumnitrid und Siliziumdioxid im Gewichtsverhältnis zwischen etwa 1 : 10 und etwa 9: 10 (Si3N4 : Si02) enthält. 10. A crucible main body member of a crucible for melting and crystallizing a metal, a semiconductor material or a metal alloy, wherein a component portion is at least partially made of a crucible material comprising silicon nitride and silicon dioxide in a weight ratio between about 1:10 and about 9:10 (Si 3 N 4 : Si0 2 ).
1 1. Verwendung eines Tiegels nach mindestens einem der Ansprüche 1 bis 9 zum Schmelzen und Kristallisieren von Silizium in einem multikristallinen Block. 1 1. Use of a crucible according to at least one of claims 1 to 9 for melting and crystallizing silicon in a multicrystalline block.
12. Verfahren zum Herstellen eines Bauteils für einen Tiegelgrundkörper eines Tiegels zum Schmelzen und Kristallisieren eines Metalls, eines Halbleiterwerkstoffs oder einer Metalllegierung, bei dem ein Bauteilabschnitt zumindest teilweise aus einem Tiegelmaterial gebildet wird, welches Siliziumnitrid und Siliziumdioxid im Gewichtsverhältnis zwischen etwa 1 : 10 und etwa 9:10 (Si3N4 : Si02) enthält. 12. A method of making a crucible body component of a crucible for melting and crystallizing a metal, semiconductor material or metal alloy, wherein a device portion is at least partially formed of a crucible material comprising silicon nitride and silicon dioxide in a weight ratio between about 1:10 and about 9:10 (Si 3 N 4 : Si0 2 ).
13. Verfahren nach Anspruch 12, wobei die folgenden Schritte vorgesehen sind: 13. The method according to claim 12, wherein the following steps are provided:
- Herstellen einer Suspension in Wasser enthaltend Siliziumnitrid und Siliziumdioxid im Gewichtsverhältnis zwischen etwa 1 : 10 und etwa 9: 10 (Si3N4 : Si02), Preparing a suspension in water containing silicon nitride and silica in a weight ratio between about 1:10 and about 9:10 (Si 3 N 4 : Si0 2 ),
- Herstellen eines oder mehrerer Grünlinge mittels Schlickerguss in einer Gießform mit nachfolgender Trocknung und  - Producing one or more green compacts by slip casting in a mold with subsequent drying and
- Sintern des einen oder der mehreren Grünlinge mittels Erhitzen auf Temperaturen zwischen etwa 1000°C und 1300°C.  - sintering the one or more green compacts by heating to temperatures between about 1000 ° C and 1300 ° C.
GEÄNDERTES BLATT (ARTIKEL 19) MODIFIED SHEET (ARTICLE 19)
14. Verfahren nach Anspruch 13, wobei beim Herstellen der Suspension eine oder mehrere Hilfsstoffe aus folgender Liste eingesetzt werden: Dispergier- und Verflüssigungshilfsmittel wie synthetische Polyelektrolyte und Carbonsäureester, Antischaummittel wie Kohlenwasserstoffe, Fettsäurederivate und Alkypolyalkylenglykolether, temporäre Bindemittel wie Polymerdispersion, Polyvinylalkohol, Polyethylenglycol, Acrylatdispersi- on, Polysaccharide und Wachse, Suspensionsstabilisatoren wie Polyammoniumderivate, Entwässerungshilfsmittel wie Polyammoniumderivate und Polyamine, temporäre Presshilfsmittel wie Acrylatdispersion, Wachsemulsion und Polyethylen. 14. The method of claim 13, wherein one or more adjuvants are used in the preparation of the suspension from the following list: dispersing and liquefying aids such as synthetic polyelectrolytes and carboxylic acid esters, antifoams such as hydrocarbons, fatty acid derivatives and Alkypolyalkylenglykolether, temporary binders such as polymer dispersion, polyvinyl alcohol, polyethylene glycol, Acrylatdispersi - on, polysaccharides and waxes, suspension stabilizers such as polyammonium derivatives, drainage aids such as polyammonium derivatives and polyamines, temporary pressing aids such as acrylate dispersion, wax emulsion and polyethylene.
15. Verfahren nach Anspruch 12, wobei die folgenden Schritte vorgesehen sind: 15. The method of claim 12, wherein the following steps are provided:
- Bereistellen des Tiegelmaterials mit Siliziumnitrid und Siliziumdioxid im Gewichtsverhältnis zwischen etwa 1 : 10 und etwa 9:10 (Si3N4 : Si02) als trockener Ausgangsstoff, Providing the crucible material with silicon nitride and silica in a weight ratio between about 1:10 and about 9:10 (Si 3 N 4 : Si0 2 ) as a dry starting material,
- Herstellen eines oder mehrerer Grünlinge aus dem trockenen Ausgangsstoff mittels Verpressen in einer Pressform und  - Producing one or more green compacts from the dry starting material by means of compression in a mold and
- Sintern des einen oder der mehreren Grünlinge mittels Erhitzen auf Temperaturen zwischen etwa 1000°C und 1300°C.  - sintering the one or more green compacts by heating to temperatures between about 1000 ° C and 1300 ° C.
16. Verfahren nach Anspruch 12, wobei die folgenden Schritte vorgesehen sind: 16. The method of claim 12, wherein the following steps are provided:
- Herstellen einer Suspension in Wasser enthaltend Siliziumnitrid und Siliziumdioxid im Gewichtsverhältnis zwischen etwa 1 :10 und etwa 9: 10 (Si3N4 : Si02), Preparing a suspension in water containing silicon nitride and silica in a weight ratio between about 1:10 and about 9:10 (Si 3 N 4 : Si0 2 ),
- Herstellen von sprühgetrockneten Partikeln mittels Sprühtrocknen der Suspension, Preparing spray-dried particles by spray-drying the suspension,
- Herstellen eines oder mehrerer Grünlinge mittels Verpressen der sprühgetrockneten Partikel in einer Pressform und - Producing one or more green compacts by pressing the spray-dried particles in a mold and
- Sintern des einen oder der mehreren Grünlinge mittels Erhitzen auf Temperaturen zwischen etwa 1000°C und 1300°C.  - sintering the one or more green compacts by heating to temperatures between about 1000 ° C and 1300 ° C.
17. Verfahren nach mindestens einem der Ansprüche 12 bis 16, wobei Siliziumnitrid und Siliziumdioxid in Pulverform verwendet werden. 17. The method according to at least one of claims 12 to 16, wherein silicon nitride and silica are used in powder form.
18. Verfahren nach Anspruch 17, wobei Siliziumnitrid und / oder Siliziumdioxid mit einer Korngröße zwischen etwa 1 μηι und etwa 500 μιη verwendet werden. 18. The method of claim 17, wherein silicon nitride and / or silicon dioxide having a particle size between about 1 μηι and about 500 μιη be used.
GEÄNDERTES BLATT (ARTIKEL 19) MODIFIED SHEET (ARTICLE 19)
19. Verfahren nach mindestens einem der Ansprüche 12 bis 18, wobei der Tiegelgrundkörper einstückig hergestellt wird. 19. The method according to at least one of claims 12 to 18, wherein the crucible body is made in one piece.
GEÄNDERTES BLATT (ARTIKEL 19)  MODIFIED SHEET (ARTICLE 19)
PCT/DE2010/000338 2009-03-20 2010-03-19 Crucible for melting and crystallizing a metal, a semiconductor, or a metal alloy, component for a crucible base body of a crucible, and method for producing a component WO2010105617A2 (en)

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