WO2010105617A8 - Crucible for melting and crystallizing a metal, a semiconductor, or a metal alloy, component for a crucible base body of a crucible, and method for producing a component - Google Patents
Crucible for melting and crystallizing a metal, a semiconductor, or a metal alloy, component for a crucible base body of a crucible, and method for producing a component Download PDFInfo
- Publication number
- WO2010105617A8 WO2010105617A8 PCT/DE2010/000338 DE2010000338W WO2010105617A8 WO 2010105617 A8 WO2010105617 A8 WO 2010105617A8 DE 2010000338 W DE2010000338 W DE 2010000338W WO 2010105617 A8 WO2010105617 A8 WO 2010105617A8
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- crucible
- component
- metal
- crystallizing
- melting
- Prior art date
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Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B14/00—Crucible or pot furnaces
- F27B14/08—Details peculiar to crucible or pot furnaces
- F27B14/10—Crucibles
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/14—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silica
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- C—CHEMISTRY; METALLURGY
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/62625—Wet mixtures
- C04B35/6263—Wet mixtures characterised by their solids loadings, i.e. the percentage of solids
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- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
- C04B35/62655—Drying, e.g. freeze-drying, spray-drying, microwave or supercritical drying
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- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
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- C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
- C04B35/62665—Flame, plasma or melting treatment
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- C04B35/634—Polymers
- C04B35/63404—Polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds
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- C04B35/63444—Nitrogen-containing polymers, e.g. polyacrylamides, polyacrylonitriles, polyvinylpyrrolidone [PVP], polyethylenimine [PEI]
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- C04B35/63488—Polyethers, e.g. alkylphenol polyglycolether, polyethylene glycol [PEG], polyethylene oxide [PEO]
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3418—Silicon oxide, silicic acids, or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
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- C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
- C04B2235/3873—Silicon nitrides, e.g. silicon carbonitride, silicon oxynitride
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- C04B2235/5436—Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
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- C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
- C04B2235/602—Making the green bodies or pre-forms by moulding
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- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
- C04B2235/786—Micrometer sized grains, i.e. from 1 to 100 micron
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Silicon Compounds (AREA)
- Ceramic Products (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
The invention relates to a crucible for melting and crystallizing a metal, a semiconductor material, or a metal alloy, wherein a crucible wall of a crucible base body is made at least partially of a crucible material comprising silicon nitride and silicon dioxide at a weight ratio of between about 1:10 and about 1:1 (Si3N4 : SiO2). The invention further relates to a component for a crucible base body of a crucible for melting and crystallizing a metal, a semiconductor material, or a metal alloy, wherein a component segment is made at least partially of a crucible material comprising silicon nitride and silicon dioxide at a weight ratio of between about 1:10 and about 1:1 (Si3N4 : SiO2), and to a method for producing a component for a crucible base of a crucible for melting and crystallizing a metal, a semiconductor material, or a metal alloy, wherein a component segment is formed at least partially of a crucible material comprising silicon nitride and silicon dioxide at a weight ratio of between about 1:10 and about 1:1 (Si3N4 : SiO2).
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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DE102009013706.8 | 2009-03-20 | ||
DE102009013706 | 2009-03-20 | ||
DE102009048741.7 | 2009-10-08 | ||
DE102009048741A DE102009048741A1 (en) | 2009-03-20 | 2009-10-08 | Crucible for melting and crystallizing a metal, a semiconductor or a metal alloy, a component for a crucible base of a crucible and method for producing a component |
Publications (4)
Publication Number | Publication Date |
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WO2010105617A2 WO2010105617A2 (en) | 2010-09-23 |
WO2010105617A8 true WO2010105617A8 (en) | 2010-11-25 |
WO2010105617A3 WO2010105617A3 (en) | 2011-01-13 |
WO2010105617A4 WO2010105617A4 (en) | 2011-03-10 |
Family
ID=42664191
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/DE2010/000338 WO2010105617A2 (en) | 2009-03-20 | 2010-03-19 | Crucible for melting and crystallizing a metal, a semiconductor, or a metal alloy, component for a crucible base body of a crucible, and method for producing a component |
Country Status (2)
Country | Link |
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DE (1) | DE102009048741A1 (en) |
WO (1) | WO2010105617A2 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5762945B2 (en) * | 2011-12-30 | 2015-08-12 | 株式会社Sumco | Silica glass crucible |
DE102012101214B4 (en) * | 2012-02-15 | 2016-09-01 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Reusable crucible of a silicon nitride ceramic, process for its preparation, its use and method for producing a mono- or multicrystalline semi-metal ingot or semi-metal body from a melt |
CN103360077B (en) * | 2012-04-01 | 2014-12-24 | 浙江昱辉阳光能源有限公司 | Silicon nitride crucible and preparation method thereof |
FR3003272A1 (en) * | 2013-03-14 | 2014-09-19 | Saint Gobain Ct Recherches | CRUCIBLE |
DE102013109024B4 (en) | 2013-08-21 | 2019-12-05 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Reusable silicon nitride ceramic crucible, process for its manufacture, use of the crucible, and process for producing a monocrystalline or multicrystalline silicon ingot and a silicon monocrystal from a melt |
DE102014102980B4 (en) | 2014-03-06 | 2017-12-21 | Ald Vacuum Technologies Gmbh | Hybrid crucible for the crystallization of materials, use of the hybrid crucible, process for the production of crystalline material and crystalline product |
CN107236987A (en) * | 2017-07-12 | 2017-10-10 | 晶科能源有限公司 | A kind of crucible preparation method and polycrystalline ingot furnace |
DE102018006329B3 (en) | 2018-08-09 | 2019-03-21 | Faruk Savasci | Process for the preparation of crucibles by stratification with thermal destruction of the crucible positives |
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DE4441911C1 (en) | 1994-11-24 | 1996-02-08 | Wacker Chemie Gmbh | Slip cast silicon di:oxide and nitride article prodn. for mould for polycrystalline silicon ingot prodn. |
JP2001510434A (en) | 1997-02-06 | 2001-07-31 | バイエル・アクチエンゲゼルシヤフト | Melt pot with silicon protective layer, method of applying silicon protective layer and use thereof |
US6491971B2 (en) | 2000-11-15 | 2002-12-10 | G.T. Equipment Technologies, Inc | Release coating system for crucibles |
NO317080B1 (en) | 2002-08-15 | 2004-08-02 | Crusin As | Silicon nitride crucibles resistant to silicon melts and processes for making such crucibles |
DE10342042A1 (en) | 2003-09-11 | 2005-04-07 | Wacker-Chemie Gmbh | Process for producing a Si3N4 coated SiO2 shaped body |
ATE398196T1 (en) | 2004-04-29 | 2008-07-15 | Vesuvius Crucible Co | CRUCIAL FOR THE CRYSTALIZATION OF SILICON |
WO2006002779A1 (en) | 2004-06-30 | 2006-01-12 | Deutsche Solar Ag | Production method for chills comprising an anti-adhesive coating |
US7540919B2 (en) | 2005-04-01 | 2009-06-02 | Gt Solar Incorporated | Solidification of crystalline silicon from reusable crucible molds |
EP1739209A1 (en) * | 2005-07-01 | 2007-01-03 | Vesuvius Crucible Company | Crucible for the crystallization of silicon |
CN101495680A (en) | 2006-06-23 | 2009-07-29 | Rec斯坎沃佛股份有限公司 | Reusable crucibles and method of manufacturing them |
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2009
- 2009-10-08 DE DE102009048741A patent/DE102009048741A1/en not_active Withdrawn
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2010
- 2010-03-19 WO PCT/DE2010/000338 patent/WO2010105617A2/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2010105617A3 (en) | 2011-01-13 |
WO2010105617A4 (en) | 2011-03-10 |
WO2010105617A2 (en) | 2010-09-23 |
DE102009048741A1 (en) | 2010-09-30 |
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