WO2010105617A8 - Crucible for melting and crystallizing a metal, a semiconductor, or a metal alloy, component for a crucible base body of a crucible, and method for producing a component - Google Patents

Crucible for melting and crystallizing a metal, a semiconductor, or a metal alloy, component for a crucible base body of a crucible, and method for producing a component Download PDF

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Publication number
WO2010105617A8
WO2010105617A8 PCT/DE2010/000338 DE2010000338W WO2010105617A8 WO 2010105617 A8 WO2010105617 A8 WO 2010105617A8 DE 2010000338 W DE2010000338 W DE 2010000338W WO 2010105617 A8 WO2010105617 A8 WO 2010105617A8
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WO
WIPO (PCT)
Prior art keywords
crucible
component
metal
crystallizing
melting
Prior art date
Application number
PCT/DE2010/000338
Other languages
German (de)
French (fr)
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WO2010105617A3 (en
WO2010105617A4 (en
WO2010105617A2 (en
Inventor
Thomas Baehr
Roel Van Loo
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Access E.V.
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Application filed by Access E.V. filed Critical Access E.V.
Publication of WO2010105617A2 publication Critical patent/WO2010105617A2/en
Publication of WO2010105617A8 publication Critical patent/WO2010105617A8/en
Publication of WO2010105617A3 publication Critical patent/WO2010105617A3/en
Publication of WO2010105617A4 publication Critical patent/WO2010105617A4/en

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    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27BFURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B14/00Crucible or pot furnaces
    • F27B14/08Details peculiar to crucible or pot furnaces
    • F27B14/10Crucibles
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    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/14Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silica
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    • C04B35/626Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605Treating the starting powders individually or as mixtures
    • C04B35/62625Wet mixtures
    • C04B35/6263Wet mixtures characterised by their solids loadings, i.e. the percentage of solids
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    • C04B35/62605Treating the starting powders individually or as mixtures
    • C04B35/62645Thermal treatment of powders or mixtures thereof other than sintering
    • C04B35/62655Drying, e.g. freeze-drying, spray-drying, microwave or supercritical drying
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    • C04B35/626Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605Treating the starting powders individually or as mixtures
    • C04B35/62645Thermal treatment of powders or mixtures thereof other than sintering
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    • C04B35/63Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
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    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002Crucibles or containers for supporting the melt
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    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10Crucibles or containers for supporting the melt
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    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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    • C30B35/00Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002Crucibles or containers
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    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/34Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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    • C04B2235/3852Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
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    • C04B2235/54Particle size related information
    • C04B2235/5418Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5436Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
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  • Chemical & Material Sciences (AREA)
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  • Ceramic Engineering (AREA)
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  • Organic Chemistry (AREA)
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  • Silicon Compounds (AREA)
  • Ceramic Products (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

The invention relates to a crucible for melting and crystallizing a metal, a semiconductor material, or a metal alloy, wherein a crucible wall of a crucible base body is made at least partially of a crucible material comprising silicon nitride and silicon dioxide at a weight ratio of between about 1:10 and about 1:1 (Si3N4 : SiO2). The invention further relates to a component for a crucible base body of a crucible for melting and crystallizing a metal, a semiconductor material, or a metal alloy, wherein a component segment is made at least partially of a crucible material comprising silicon nitride and silicon dioxide at a weight ratio of between about 1:10 and about 1:1 (Si3N4 : SiO2), and to a method for producing a component for a crucible base of a crucible for melting and crystallizing a metal, a semiconductor material, or a metal alloy, wherein a component segment is formed at least partially of a crucible material comprising silicon nitride and silicon dioxide at a weight ratio of between about 1:10 and about 1:1 (Si3N4 : SiO2).
PCT/DE2010/000338 2009-03-20 2010-03-19 Crucible for melting and crystallizing a metal, a semiconductor, or a metal alloy, component for a crucible base body of a crucible, and method for producing a component WO2010105617A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102009013706.8 2009-03-20
DE102009013706 2009-03-20
DE102009048741.7 2009-10-08
DE102009048741A DE102009048741A1 (en) 2009-03-20 2009-10-08 Crucible for melting and crystallizing a metal, a semiconductor or a metal alloy, a component for a crucible base of a crucible and method for producing a component

Publications (4)

Publication Number Publication Date
WO2010105617A2 WO2010105617A2 (en) 2010-09-23
WO2010105617A8 true WO2010105617A8 (en) 2010-11-25
WO2010105617A3 WO2010105617A3 (en) 2011-01-13
WO2010105617A4 WO2010105617A4 (en) 2011-03-10

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JP5762945B2 (en) * 2011-12-30 2015-08-12 株式会社Sumco Silica glass crucible
DE102012101214B4 (en) * 2012-02-15 2016-09-01 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Reusable crucible of a silicon nitride ceramic, process for its preparation, its use and method for producing a mono- or multicrystalline semi-metal ingot or semi-metal body from a melt
CN103360077B (en) * 2012-04-01 2014-12-24 浙江昱辉阳光能源有限公司 Silicon nitride crucible and preparation method thereof
FR3003272A1 (en) * 2013-03-14 2014-09-19 Saint Gobain Ct Recherches CRUCIBLE
DE102013109024B4 (en) 2013-08-21 2019-12-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Reusable silicon nitride ceramic crucible, process for its manufacture, use of the crucible, and process for producing a monocrystalline or multicrystalline silicon ingot and a silicon monocrystal from a melt
DE102014102980B4 (en) 2014-03-06 2017-12-21 Ald Vacuum Technologies Gmbh Hybrid crucible for the crystallization of materials, use of the hybrid crucible, process for the production of crystalline material and crystalline product
CN107236987A (en) * 2017-07-12 2017-10-10 晶科能源有限公司 A kind of crucible preparation method and polycrystalline ingot furnace
DE102018006329B3 (en) 2018-08-09 2019-03-21 Faruk Savasci Process for the preparation of crucibles by stratification with thermal destruction of the crucible positives

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US7540919B2 (en) 2005-04-01 2009-06-02 Gt Solar Incorporated Solidification of crystalline silicon from reusable crucible molds
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CN101495680A (en) 2006-06-23 2009-07-29 Rec斯坎沃佛股份有限公司 Reusable crucibles and method of manufacturing them

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