WO2010099998A3 - Method for producing semiconductor components using doping techniques - Google Patents

Method for producing semiconductor components using doping techniques Download PDF

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Publication number
WO2010099998A3
WO2010099998A3 PCT/EP2010/050765 EP2010050765W WO2010099998A3 WO 2010099998 A3 WO2010099998 A3 WO 2010099998A3 EP 2010050765 W EP2010050765 W EP 2010050765W WO 2010099998 A3 WO2010099998 A3 WO 2010099998A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor components
doping techniques
producing semiconductor
created
substrate
Prior art date
Application number
PCT/EP2010/050765
Other languages
German (de)
French (fr)
Other versions
WO2010099998A2 (en
Inventor
Tobias WÜTHERICH
Mathias Weiss
Jan Lossen
Karsten Meyer
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Priority to JP2011552371A priority Critical patent/JP2012519385A/en
Priority to EP10704123A priority patent/EP2404322A2/en
Priority to CN2010800103050A priority patent/CN103119724A/en
Publication of WO2010099998A2 publication Critical patent/WO2010099998A2/en
Publication of WO2010099998A3 publication Critical patent/WO2010099998A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention relates to a method for producing semiconductor components using doping techniques, wherein during processing a sequence of layers is created which are to be positioned exactly with respect to each other. According to the invention, a selectively doped structure created in the semiconductor substrate is determined in the position thereof in the substrate using an infrared-sensitive camera device, and the position located in this way is directly or indirectly used to adjust the subsequent processing step.
PCT/EP2010/050765 2009-03-04 2010-01-25 Method for producing semiconductor components using doping techniques WO2010099998A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011552371A JP2012519385A (en) 2009-03-04 2010-01-25 Method for manufacturing semiconductor device using doping technique
EP10704123A EP2404322A2 (en) 2009-03-04 2010-01-25 Method for producing semiconductor components using doping techniques
CN2010800103050A CN103119724A (en) 2009-03-04 2010-01-25 Method for producing semiconductor components using doping techniques

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102009011640 2009-03-04
DE102009011640.0 2009-03-04
DE102009018653.0A DE102009018653B4 (en) 2009-03-04 2009-04-23 Method for the production of semiconductor devices using doping techniques
DE102009018653.0 2009-04-23

Publications (2)

Publication Number Publication Date
WO2010099998A2 WO2010099998A2 (en) 2010-09-10
WO2010099998A3 true WO2010099998A3 (en) 2011-04-28

Family

ID=42558031

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2010/050765 WO2010099998A2 (en) 2009-03-04 2010-01-25 Method for producing semiconductor components using doping techniques

Country Status (5)

Country Link
EP (1) EP2404322A2 (en)
JP (1) JP2012519385A (en)
CN (1) CN103119724A (en)
DE (1) DE102009018653B4 (en)
WO (1) WO2010099998A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8084293B2 (en) 2010-04-06 2011-12-27 Varian Semiconductor Equipment Associates, Inc. Continuously optimized solar cell metallization design through feed-forward process
JP5664591B2 (en) * 2012-04-26 2015-02-04 信越化学工業株式会社 Solar cell and manufacturing method thereof
US8895325B2 (en) 2012-04-27 2014-11-25 Varian Semiconductor Equipment Associates, Inc. System and method for aligning substrates for multiple implants
JP6821473B2 (en) * 2017-03-07 2021-01-27 株式会社アルバック Back-contact type crystalline solar cell manufacturing method and mask
CN109004067A (en) * 2018-09-26 2018-12-14 浙江晶科能源有限公司 A kind of N-shaped preparation method of solar battery

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4534804A (en) * 1984-06-14 1985-08-13 International Business Machines Corporation Laser process for forming identically positioned alignment marks on the opposite sides of a semiconductor wafer
JPH04115517A (en) * 1990-09-05 1992-04-16 Mitsubishi Electric Corp Method for forming alignment mark
WO2000054031A1 (en) * 1999-03-06 2000-09-14 Zettner Juergen Method for characterising the electronic properties of a semiconductor
DE69915317T2 (en) * 1998-06-29 2005-02-17 Unisearch Ltd., Sydney SELF-ADJUSTING METHOD FOR PRODUCING A SELECTIVE EMITTER AND METALLIZING IN A SOLAR CELL
US20050122525A1 (en) * 2003-12-09 2005-06-09 Borden Peter G. Use of scanning beam for differential evaluation of adjacent regions for change in reflectivity
WO2009155498A2 (en) * 2008-06-20 2009-12-23 Varian Semiconductor Equipment Associates Use of pattern recognition to align patterns in a downstream process

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5883518A (en) * 1996-04-24 1999-03-16 Boxer Cross, Inc. System and method for measuring the doping level and doping profile of a region in a semiconductor substrate
EP0851511A1 (en) * 1996-12-24 1998-07-01 IMEC vzw Semiconductor device with two selectively diffused regions
KR100540865B1 (en) * 2002-11-06 2006-01-11 삼성전자주식회사 Concentration measurement and method of dopant concentration measurement of semiconductor device
WO2005017996A1 (en) * 2003-03-14 2005-02-24 Andreas Mandelis Method of photocarrier radiometry of semiconductors
US7557359B2 (en) * 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US7697146B2 (en) * 2005-02-24 2010-04-13 Dcg Systems, Inc. Apparatus and method for optical interference fringe based integrated circuit processing
DE102006055862B4 (en) * 2006-11-22 2008-07-03 Q-Cells Ag Method and device for producing a solar cell electrical contact structure on a substrate
DE102007035068A1 (en) * 2007-07-26 2009-01-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for manufacturing silicon solar cell with selective emitter, involves producing laminar emitter at emitter surface of solar cell substrate and applying corroding barrier on sub ranges of emitter surface

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4534804A (en) * 1984-06-14 1985-08-13 International Business Machines Corporation Laser process for forming identically positioned alignment marks on the opposite sides of a semiconductor wafer
JPH04115517A (en) * 1990-09-05 1992-04-16 Mitsubishi Electric Corp Method for forming alignment mark
DE69915317T2 (en) * 1998-06-29 2005-02-17 Unisearch Ltd., Sydney SELF-ADJUSTING METHOD FOR PRODUCING A SELECTIVE EMITTER AND METALLIZING IN A SOLAR CELL
WO2000054031A1 (en) * 1999-03-06 2000-09-14 Zettner Juergen Method for characterising the electronic properties of a semiconductor
US20050122525A1 (en) * 2003-12-09 2005-06-09 Borden Peter G. Use of scanning beam for differential evaluation of adjacent regions for change in reflectivity
WO2009155498A2 (en) * 2008-06-20 2009-12-23 Varian Semiconductor Equipment Associates Use of pattern recognition to align patterns in a downstream process

Also Published As

Publication number Publication date
DE102009018653A1 (en) 2010-09-16
CN103119724A (en) 2013-05-22
WO2010099998A2 (en) 2010-09-10
DE102009018653B4 (en) 2015-12-03
JP2012519385A (en) 2012-08-23
EP2404322A2 (en) 2012-01-11

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