WO2010099998A2 - Method for producing semiconductor components using doping techniques - Google Patents

Method for producing semiconductor components using doping techniques Download PDF

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Publication number
WO2010099998A2
WO2010099998A2 PCT/EP2010/050765 EP2010050765W WO2010099998A2 WO 2010099998 A2 WO2010099998 A2 WO 2010099998A2 EP 2010050765 W EP2010050765 W EP 2010050765W WO 2010099998 A2 WO2010099998 A2 WO 2010099998A2
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WIPO (PCT)
Prior art keywords
metallization
selectively doped
solar cell
doped structure
wafer
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PCT/EP2010/050765
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German (de)
French (fr)
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WO2010099998A3 (en
Inventor
Tobias WÜTHERICH
Mathias Weiss
Jan Lossen
Karsten Meyer
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Bosch Solar Energy Ag
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Priority to JP2011552371A priority Critical patent/JP2012519385A/en
Priority to EP10704123A priority patent/EP2404322A2/en
Priority to CN2010800103050A priority patent/CN103119724A/en
Publication of WO2010099998A2 publication Critical patent/WO2010099998A2/en
Publication of WO2010099998A3 publication Critical patent/WO2010099998A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a method for the production of semiconductor devices using doping techniques, wherein during the processing a sequence of layers is generated, which are to be positioned exactly to each other, in particular a method for producing a silicon solar cell with selective emitter and metallization for contact finger generation, said the emitter regions below the contact fingers have a locally high doping concentration, according to the preamble of patent claims 1 and 4, respectively.
  • a method for manufacturing a silicon solar cell with selective emitter comprises the method steps of producing a planar emitter on an emitter surface of a solar cell substrate, applying an etching barrier to first portions of the emitter surface, etching the emitter surface in second portions of the emitter surface not covered by the etching barrier, removing the etching barrier and producing metal contacts the first subareas.
  • an emitter is firstly produced on at least one surface of a solar cell substrate having a homogeneous doping concentration which is high enough that it is suitable for contact by the screen printing method.
  • the problem is the exact positioning of the metal contacts on the above-mentioned first portions.
  • wafers are adjusted at different process steps in the respective production plant, so that the structures produced in the individual process steps can be aligned with each other.
  • it is possible either to align the wafers mechanically by stops or to determine the position of special reference points in the installation and to align the process with the aid of camera systems operating in the visual area.
  • the reference points used are usually the edges of the wafer or specially applied markings.
  • Exact positioning is crucial in the production of highly efficient solar cells, as the structures, which are only a few micrometers wide at certain process steps, have to be positioned exactly in order to achieve the desired function and high efficiency of the solar cell.
  • the second heating is locally realized by passing a beam of a laser over the surface of the device where metallization is to be applied. To one To prevent excessive ablation during the heating step, it is necessary to defocus the laser.
  • the contact structure is realized by generating a metallic vapor in the region of the substrate, wherein a mask which partially shields the substrate against the metallic vapor is provided having a contact structure, i. H. having corresponding openings.
  • This mask is then moved in sections through the metallic vapor, with the movement of the mask through the metallic vapor relative to the substrate.
  • the positioning accuracy between the substrate and the mask is limited, so that in the end, in order to achieve contactable emitters, they must be sufficiently wide and have a locally strong doping.
  • the difficulty in positioning the metallization to make a front-side contact structure results in having to choose or choose the area of high doping wider, based on the actual metallization paths. This basically has a detrimental effect on the achievable efficiencies of manufactured solar cells, but ensures that the metallization actually comes to lie exclusively on the highly doped regions.
  • the core idea of the invention is to determine a selectively doped structure or a doping gradient produced in the semiconductor substrate by means of an infrared-sensitive camera device in its position in the substrate and to use the position thus found directly or indirectly for the adjustment of the following processing step.
  • the selectively doped emitter structure produced in a known manner is itself used to position the z. B. screen mask respectively the metal grid used.
  • a direct adjustment is made.
  • To make the selectively doped structure visible it is heated or exposed to an infrared, in particular NIR radiation.
  • an infrared, in particular NIR radiation In this way it is possible to visualize the selectively doped structure, which can not be determined in the visible range of the light, for an IR-sensitive camera device.
  • a referencing can take place directly on the recognized, visualized structure of the emitter regions.
  • the prior art corresponding indirect adjustment to third features, eg. As wafer edges or alignment marks, which always entails a chain of tolerances, omitted in the inventive solution.
  • the Alignmentproblem is not limited to a metallization, but also occurs in other manufacturing steps, for.
  • the processing of highly doped areas on the back of a back-side contact cell can be used for the adjustment of the n-high doping on the existing p-high doping or vice versa.
  • the wafer can be subjected to IR transmitted light or IR incident light irradiation and the transmitted or emitted IR radiation can be used to visualize the selectively doped structure in order to adjust the z. B. screen print mask.
  • the selectively doped structure with reduced dimensions, ie. H. the doped surface remains exactly limited to the area of the subsequently applied metallization, which increases the efficiency and the efficiency of a solar cell produced in this way.
  • FIG. 1 shows a principle arrangement for implementing the method for producing a silicon solar cell, wherein the selectively doped emitter areas are visualized for adjusting the screen-printing mask for the generation of the contact fingers, and
  • FIG. 2 shows real images of a visualized doping structure of a wafer, wherein it can be seen that the highly doped region absorbs a larger proportion of IR radiation.
  • a screen-printed solar cell with a selective emitter is assumed.
  • This doping can first be generated as a homogeneous weak doping by gas phase diffusion in a tube furnace. In a next step, those areas are then masked, which should remain weak doped. By a further gas phase diffusion then the non-masked areas are subjected to a high doping.
  • a full-area antireflection coating is produced.
  • the metallization is applied by screen printing and made by sintering an electrical connection to the underlying emitter.
  • the screen mask is to be aligned exactly to the highly doped areas, so that the pressure of the contact fingers can be done with high accuracy.
  • the selectively doped structure is determined by means of an IR-sensitive camera device in its position in the wafer and then aligned directly the screen printing mask using the visualized position.
  • the visualization of the position of the selectively doped structure can be carried out with an arrangement according to FIG.
  • a radiation source 2 is arranged, which emits the IR radiation.
  • an IR-sensitive camera 3 is able to visualize the selective emitter structure, so that the positioning of the screen mask for the step of generating the metal contact fingers can be done with high accuracy.
  • the image taken by the IR camera 3 of the highly doped region of the emitter regions is shown in the illustrations according to FIG. 2. It becomes clear that the highly doped emitter region absorbs more infrared radiation, which can be visualized by the IR camera 3 and a suitable display device.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
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Abstract

The invention relates to a method for producing semiconductor components using doping techniques, wherein during processing a sequence of layers is created which are to be positioned exactly with respect to each other. According to the invention, a selectively doped structure created in the semiconductor substrate is determined in the position thereof in the substrate using an infrared-sensitive camera device, and the position located in this way is directly or indirectly used to adjust the subsequent processing step.

Description

Verfahren zur Herstellung von Halbleiterbauelementen unter Nutzung von Process for the production of semiconductor devices using
Dotierungstechnikendoping techniques
Beschreibungdescription
Die Erfindung betrifft ein Verfahren zur Herstellung von Halbleiterbauelementen unter Nutzung von Dotierungstechniken, wobei während der Prozessierung eine Abfolge von Schichten erzeugt wird, welche exakt zueinander zu positionieren sind, insbesondere ein Verfahren zur Herstellung einer Silizium-Solarzelle mit selektivem Emitter sowie Metallisierung zur Kontaktfingererzeugung, wobei die Emitterbereiche unterhalb der Kontaktfinger eine lokal hohe Dotierungskonzentration besitzen, gemäß Oberbegriff des Patentanspruchs 1 bzw. 4.The invention relates to a method for the production of semiconductor devices using doping techniques, wherein during the processing a sequence of layers is generated, which are to be positioned exactly to each other, in particular a method for producing a silicon solar cell with selective emitter and metallization for contact finger generation, said the emitter regions below the contact fingers have a locally high doping concentration, according to the preamble of patent claims 1 and 4, respectively.
Aus der DE 10 2007 035 068 Al ist ein Verfahren zum Fertigen einer Silizium- Solarzelle mit selektivem Ermitter vorbekannt. Dieses Verfahren umfasst die Verfahrensschritte des Erzeugens eines flächigen Emitters an einer Emitteroberfläche eines Solarzellensubtrats, das Aufbringen einer Ätzbarriere auf erste Teilbereiche der Emitteroberfläche, das Ätzen der Emitteroberfläche in nicht von der Ätzbarriere bedeckten zweiten Teilbereichen der Emitteroberfläche, das Entfernen der Ätzbarriere und Erzeugen von Metallkontakten an den ersten Teilbereichen.From DE 10 2007 035 068 Al a method for manufacturing a silicon solar cell with selective emitter is previously known. This method comprises the method steps of producing a planar emitter on an emitter surface of a solar cell substrate, applying an etching barrier to first portions of the emitter surface, etching the emitter surface in second portions of the emitter surface not covered by the etching barrier, removing the etching barrier and producing metal contacts the first subareas.
Bei diesem Verfahren wird zunächst ein Emitter an wenigstens einer Oberfläche eines Solarzellensubtrats mit einer homogenen Dotierungskonzentration hergestellt, die hoch genug ist, dass diese für eine Kontak- tierung im Siebdruckverfahren geeignet ist. Problematisch ist jedoch die genaue Positionierung der Metallkontakte auf die oben genannten ersten Teilbereiche. In bekannter Weise werden Wafer bei verschiedenen Prozessschritten in der jeweiligen Fertigungsanlage justiert, damit die in den einzelnen Prozessschritten hergestellten Strukturen zueinander ausgerichtet werden können. Hier besteht die Möglichkeit, die Wafer entweder durch Anschläge mechanisch auszurichten oder es wird mit Hilfe von im visuellen Bereich arbeitenden Kamerasystemen die Position von speziellen Referenzpunkten in der Anlage bestimmt und der Prozess daran ausgerichtet.In this method, an emitter is firstly produced on at least one surface of a solar cell substrate having a homogeneous doping concentration which is high enough that it is suitable for contact by the screen printing method. However, the problem is the exact positioning of the metal contacts on the above-mentioned first portions. In a known manner, wafers are adjusted at different process steps in the respective production plant, so that the structures produced in the individual process steps can be aligned with each other. Here, it is possible either to align the wafers mechanically by stops or to determine the position of special reference points in the installation and to align the process with the aid of camera systems operating in the visual area.
Als Referenzpunkte werden dabei üblicherweise die Kanten des Wafers oder speziell aufgebrachte Markierungen verwendet.The reference points used are usually the edges of the wafer or specially applied markings.
Bei der Herstellung hocheffizienter Solarzellen ist eine exakte Positionierung entscheidend, da die bei bestimmten Prozessschritten nur wenige Mikrometer breiten Strukturen exakt aufeinander positioniert werden müssen, um die gewünschte Funktion sowie einen hohen Wirkungsgrad der Solarzelle zu ermöglichen.Exact positioning is crucial in the production of highly efficient solar cells, as the structures, which are only a few micrometers wide at certain process steps, have to be positioned exactly in order to achieve the desired function and high efficiency of the solar cell.
Zur Lösung des Justageproblems ist gemäß der DE 699 15 317 T2 ein selbstjustierendes Verfahren zur Herstellung eines selektiven Ermitters und der Metallisierung in einer Solarzelle vorgeschlagen worden. Bei diesem Verfahren werden sogenannte gebrannte Kontakte erzeugt. Im Detail wird zunächst ein Ätzen zum Entfernen von Sägeschäden sowie ein anisotropes Texturieren realisiert. Im Anschluss erfolgt ein Aufbringen eines Dielektrikums, das n-Typ- Dotierungsmittel enthält, und zwar auf die Rückseite des Wafers. Im nächsten Schritt wird ein p-Typ-Dotierungsmittel auf die Rückseite aufgebracht und es erfolgt ein thermisches Behandeln, um den n-Typ-Emitter und den p-Typ- Rückseitenbereich leicht zu diffundieren. Falls erforderlich, beinhaltet der thermische Prozess das Behandeln des Dielektrikums, z. B. durch Oxidation, um eine ausreichende Beständigkeit gegen Metallisierungslösungen zu erreichen. Im nächsten Schritt erfolgt eine Laserverarbeitung und das Ausbilden von Mustern an dem vorderen Dielektrikum sowie eine Laserverarbeitung des hinteren Dielektrikums sowie hierbei ein gleichzeitiges stromloses Metallisieren des vorderen und hinteren Metallkontakts. Es wird also die zweite Erwärmung lokal realisiert, indem ein Strahl eines Lasers über die Fläche des Bauelements, wo eine Metallisierung aufzubringen ist, geführt wird. Um eine übermäßige Ablation wärend des Erwärmungsschritts zu verhindern, ist es notwendig, den Laser zu defokussieren.To solve the Justageproblems a self-adjusting method for producing a selective Ermitters and the metallization has been proposed in a solar cell according to DE 699 15 317 T2. In this method, so-called fired contacts are generated. In detail, an etching to remove Sägeschäden and an anisotropic texturing is first realized. This is followed by deposition of a dielectric containing n-type dopant onto the back surface of the wafer. In the next step, a p-type dopant is applied to the backside and thermally treated to easily diffuse the n-type emitter and the p-type backside region. If necessary, the thermal process involves treating the dielectric, e.g. By oxidation to achieve sufficient resistance to plating solutions. In the next step, laser processing and the formation of patterns on the front dielectric as well as a laser processing of the rear dielectric as well as a simultaneous electroless metallization of the front and rear metal contacts takes place. Thus, the second heating is locally realized by passing a beam of a laser over the surface of the device where metallization is to be applied. To one To prevent excessive ablation during the heating step, it is necessary to defocus the laser.
Bei dem Verfahren und der Vorrichtung zum Herstellen einer elektrischen Solarzellen-Kontaktstruktur an einem Substrat gemäß DE 10 2006 055 862 Al wird die Kontaktstruktur durch Erzeugen eines metallischen Dampfes im Bereich des Substrats realisiert, wobei eine das Substrat abschnittsweise gegenüber dem metallischen Dampf abschirmende Maske vorgesehen ist, die eine Kontaktstruktur, d . h. entsprechende Öffnungen aufweist. Diese Maske wird dann abschnittsweise durch den metallischen Dampf bewegt, wobei das Bewegen der Maske durch den metallischen Dampf relativ zum Substrat erfolgt. Auch bei diesem Verfahren ist die Positionierungsgenauigkeit zwischen Substrat und Maske begrenzt, so dass letztendlich zum Erreichen kontaktier- barer Emitter diese ausreichend breit sein müssen und eine lokal starke Dotierung aufzuweisen haben.In the method and the device for producing an electrical solar cell contact structure on a substrate according to DE 10 2006 055 862 A1, the contact structure is realized by generating a metallic vapor in the region of the substrate, wherein a mask which partially shields the substrate against the metallic vapor is provided having a contact structure, i. H. having corresponding openings. This mask is then moved in sections through the metallic vapor, with the movement of the mask through the metallic vapor relative to the substrate. In this method too, the positioning accuracy between the substrate and the mask is limited, so that in the end, in order to achieve contactable emitters, they must be sufficiently wide and have a locally strong doping.
Die Schwierigkeiten bei der Positionierung der Metallisierung zum Ausführen einer Vorderseiten-Kontaktstruktur führen also dazu, das Gebiet der Hochdotierung breiter zu wählen oder wählen zu müssen, und zwar bezogen auf die eigentlichen Metallisierungsbahnen. Dies wirkt sich grundsätzlich nachteilig auf die erreichbaren Wirkungsgrade hergestellter Solarzellen aus, stellt allerdings sicher, dass die Metallisierung tatsächlich ausschließlich auf die hochdotierten Bereiche zu liegen kommt.Thus, the difficulty in positioning the metallization to make a front-side contact structure results in having to choose or choose the area of high doping wider, based on the actual metallization paths. This basically has a detrimental effect on the achievable efficiencies of manufactured solar cells, but ensures that the metallization actually comes to lie exclusively on the highly doped regions.
Aus dem Vorgenannten ist es daher Aufgabe der Erfindung, ein weiterentwickeltes Verfahren zur Herstellung von Halbleiterbauelementen unter Nutzung von Dotierungstechniken anzugeben, wobei während der Prozessierung eine Abfolge von Schichten erzeugt wird, welche exakt zueinander zu positionieren sind . Insbesondere geht es um ein weiterentwickeltes Verfahren zur Herstellung einer Silizium-Solarzelle mit selektivem Emitter sowie Metallisierung zur Kontaktfingererzeugung, wobei die Emitterbereiche unterhalb der Kontaktfinger eine lokal hohe Dotierungskonzentration besitzen und es gilt, die Effizienz der so hergestellten Solarzelle zu erhöhen. Die Lösung der Aufgabe der Erfindung erfolgt mit einem Verfahren gemäß der Lehre nach Patentanspruch 1 bzw. 4, wobei die Unteransprüche mindestens zweckmäßige Ausgestaltungen und Weiterbildungen umfassen.From the above, it is therefore an object of the invention to provide a further developed method for the production of semiconductor devices using doping techniques, wherein during the processing a sequence of layers is generated, which are to be positioned exactly to each other. In particular, there is a further developed method for producing a silicon solar cell with selective emitter and metallization for contact finger generation, wherein the emitter regions below the contact fingers have a locally high doping concentration and it is necessary to increase the efficiency of the solar cell thus produced. The object of the invention is achieved by a method according to the teaching of claim 1 or 4, wherein the dependent claims comprise at least expedient refinements and developments.
Der Kerngedanke der Erfindung besteht darin, eine im Halbleitersubstrat erzeugte selektiv dotierte Struktur oder einen Dotierungsgradient mittels einer infrarotempfindlichen Kameraeinrichtung in ihrer Position im Substrat zu ermitteln und die so aufgefundene Position unmittelbar oder mittelbar für die Justage des folgenden Prozessierungsschritts zu nutzen.The core idea of the invention is to determine a selectively doped structure or a doping gradient produced in the semiconductor substrate by means of an infrared-sensitive camera device in its position in the substrate and to use the position thus found directly or indirectly for the adjustment of the following processing step.
Gemäß dem erfindungsgemäßen Verfahren nach Anspruch 4 wird die in an sich bekannter Weise erzeugte selektiv dotierte Emitterstruktur selbst zum Positionieren der z. B. Siebdruckmaske respektive des Metallgrids genutzt. Im Gegensatz zu Verfahren des Standes der Technik wird also eine direkte Justage vorgenommen. Um die selektiv dotierte Struktur sichtbar zu machen, wird diese erwärmt bzw. einer infraroten, insbesondere NIR-Strahlung ausgesetzt. Auf diese Weise ist es möglich, die selektiv dotierte Struktur, die im sichtbaren Bereich des Lichtes nicht ermittelt werden kann, für eine IR- empfindliche Kameraeinrichtung zu visualisieren. Es kann also eine Referenzierung unmittelbar an der erkannten, visualisierten Struktur der Emitterbereiche erfolgen. Die dem Stand der Technik entsprechende indirekte Justierung auf dritte Merkmale, z. B. Waferkanten oder Ausrichtmarken, die immer eine Verkettung von Toleranzen nach sich zieht, entfällt bei der erfindungsgemäßen Lösung. Es sei an dieser Stelle angemerkt, dass das Alignmentproblem nicht allein auf eine Metallisierung beschränkt ist, sondern auch bei anderen Herstellungsschritten auftritt, und zwar z. B. bei der Prozessierung hochdotierter Gebiete auf der Rückseite einer Rückseiten- kontaktzelle. Hier kann für die Justierung der n-Hochdotierung auf die vorhandene p-Hochdotierung zurückgegriffen werden oder umgekehrt.According to the inventive method according to claim 4, the selectively doped emitter structure produced in a known manner is itself used to position the z. B. screen mask respectively the metal grid used. In contrast to methods of the prior art, therefore, a direct adjustment is made. To make the selectively doped structure visible, it is heated or exposed to an infrared, in particular NIR radiation. In this way it is possible to visualize the selectively doped structure, which can not be determined in the visible range of the light, for an IR-sensitive camera device. Thus, a referencing can take place directly on the recognized, visualized structure of the emitter regions. The prior art corresponding indirect adjustment to third features, eg. As wafer edges or alignment marks, which always entails a chain of tolerances, omitted in the inventive solution. It should be noted at this point that the Alignmentproblem is not limited to a metallization, but also occurs in other manufacturing steps, for. As in the processing of highly doped areas on the back of a back-side contact cell. Here can be used for the adjustment of the n-high doping on the existing p-high doping or vice versa.
Der Wafer kann einer IR-Durchlicht- oder einer IR-Auflicht-Bestrahlung unterzogen und die transmittierte oder emittierte IR-Strahlung zur Visualisierung der selektiv dotierten Struktur genutzt werden, um hieran das Justieren der z. B. Siebdruckmaske auszuführen. Unter Nutzung des erfindungsgemäßen Prinzips besteht dann die Möglichkeit, die selektiv dotierte Struktur mit reduzierten Abmessungen auszuführen, d . h. die dotierte Fläche bleibt exakt auf das Gebiet der im Nachgang aufzubringenden Metallisierung begrenzt, was die Effizienz und den Wirkungsgrad einer derartig hergestellten Solarzelle erhöht.The wafer can be subjected to IR transmitted light or IR incident light irradiation and the transmitted or emitted IR radiation can be used to visualize the selectively doped structure in order to adjust the z. B. screen print mask. Using the principle according to the invention, it is then possible to carry out the selectively doped structure with reduced dimensions, ie. H. the doped surface remains exactly limited to the area of the subsequently applied metallization, which increases the efficiency and the efficiency of a solar cell produced in this way.
Die Erfindung soll nachstehend anhand eines Ausführungsbeispiels sowie unter Zuhilfenahme von Figuren näher erläutert werden.The invention will be explained below with reference to an embodiment and with the aid of figures.
Hierbei zeigen :Hereby show:
Fig. 1 eine Prinzipanordnung zur Realisierung des Verfahrens zur Herstellung einer Silizium-Solarzelle, wobei zur Justage der Siebdruckmaske für die Erzeugung der Kontaktfinger die selektiv dotierten Emitterbereiche visualisiert werden, und1 shows a principle arrangement for implementing the method for producing a silicon solar cell, wherein the selectively doped emitter areas are visualized for adjusting the screen-printing mask for the generation of the contact fingers, and
Fig. 2 reale Aufnahmen einer visualisierten Dotierstruktur eines Wafers, wobei ersichtlich ist, dass das hochdotierte Gebiet einen größeren Anteil an IR-Strahlung absorbiert.FIG. 2 shows real images of a visualized doping structure of a wafer, wherein it can be seen that the highly doped region absorbs a larger proportion of IR radiation. FIG.
Bei einem Ausführungsbeispiel der Erfindung wird von einer Siebdruck- Solarzelle mit selektivem Emitter ausgegangen.In one embodiment of the invention, a screen-printed solar cell with a selective emitter is assumed.
Es handelt sich hier um eine Zellstruktur, bei der die Fläche unter der Kontaktmetallisierung hochdotiert und die restlichen Bereiche schwachdotiert sind .This is a cell structure in which the surface under the contact metallization highly doped and the remaining areas are weakly doped.
Diese Dotierung kann zunächst als homogene schwache Dotierung durch Gasphasendiffusion in einem Rohrofen erzeugt werden. In einem nächsten Schritt werden dann diejenigen Bereiche maskiert, welche schwachdotiert bleiben sollen. Durch eine weitere Gasphasendiffusion werden dann die nicht maskierten Bereiche einer hohen Dotierung unterzogen.This doping can first be generated as a homogeneous weak doping by gas phase diffusion in a tube furnace. In a next step, those areas are then masked, which should remain weak doped. By a further gas phase diffusion then the non-masked areas are subjected to a high doping.
Nach Entfernen der Maskierung wird eine ganzflächige Antireflexbeschichtung erzeugt. Hierauf wird dann die Metallisierung durch Siebdruck aufgebracht und durch Sintern eine elektrische Verbindung zum darunter liegenden Emitter hergestellt. Die Siebdruckmaske ist dabei exakt auf die hochdotierten Bereiche auszurichten, so dass der Druck der Kontaktfinger mit hoher Genauigkeit erfolgen kann.After removal of the masking, a full-area antireflection coating is produced. Then the metallization is applied by screen printing and made by sintering an electrical connection to the underlying emitter. The screen mask is to be aligned exactly to the highly doped areas, so that the pressure of the contact fingers can be done with high accuracy.
Zur Justage der Siebdruckmaske für die Erzeugung der Kontaktfinger wird die selektiv dotierte Struktur mittels einer IR-empfindlichen Kameraeinrichtung in ihrer Position im Wafer ermittelt und dann die Siebdruckmaske unter Nutzung der visualisierten Position unmittelbar ausgerichtet.For adjusting the screen-printing mask for the generation of the contact fingers, the selectively doped structure is determined by means of an IR-sensitive camera device in its position in the wafer and then aligned directly the screen printing mask using the visualized position.
Aufgrund der im Vergleich zum Stand der Technik wesentlich exakteren Justierung ist es möglich, weniger Fläche einer hohen Dotierung zu unterziehen, was die Effizienz der Solarzelle verbessert.Due to the much more accurate compared to the prior art adjustment, it is possible to subject less surface of a high doping, which improves the efficiency of the solar cell.
Die Visualisierung der Position der selektiv dotierten Struktur kann mit einer Anordnung gemäß Fig. 1 vorgenommen werden.The visualization of the position of the selectively doped structure can be carried out with an arrangement according to FIG.
Hierfür wird beispielsweise unterhalb des dotierten Siliziumwafers 1 eine Strahlungsquelle 2 angeordnet, die die IR-Strahlung emittiert.For this purpose, for example, below the doped silicon wafer 1 a radiation source 2 is arranged, which emits the IR radiation.
Aufgrund der Abhängigkeit des Absorptionskoeffizienten im Silizium von der Wellenlänge und der Dotierkonzentration ist eine IR-empfindliche Kamera 3 in der Lage, die selektive Emitterstruktur zu visualisieren, so dass die Positionierung der Siebdruckmaske für den Schritt der Erzeugung der Metallkontaktfinger in hoher Genauigkeit erfolgen kann.Due to the dependence of the absorption coefficient in the silicon on the wavelength and the doping concentration, an IR-sensitive camera 3 is able to visualize the selective emitter structure, so that the positioning of the screen mask for the step of generating the metal contact fingers can be done with high accuracy.
Das von der IR-Kamera 3 aufgenommene Bild des hochdotierten Gebiets der Emitterbereiche ist in den Darstellungen nach Fig. 2 gezeigt. Es wird deutlich, dass das hochdotierte Emittergebiet mehr infrarote Strahlung absorbiert, was durch die IR-Kamera 3 und eine geeignete Anzeigeeinrichtung visualisierbar ist.The image taken by the IR camera 3 of the highly doped region of the emitter regions is shown in the illustrations according to FIG. 2. It becomes clear that the highly doped emitter region absorbs more infrared radiation, which can be visualized by the IR camera 3 and a suitable display device.
Durch die direkte Justierung des Metallgrids auf die Dotierstruktur selbst können ansonsten auftretende Positionierungsungenauigkeiten bei der Herstellung selektiver Dotierungen vermieden werden. Hierdurch kann die hochdotierte Fläche genauer auf das Gebiet unter der Metallisierung begrenzt werden, was die gewünschten positiven Effekte hinsichtlich der Effizienz der Solarzelle nach sich zieht. Für die Kontaktmetallisierung kann nicht nur auf die bekannte Siebdrucktechnik, sondern auch auf einen Schablonendruck oder einen sogenannten Aerosol-Druck mit entsprechendem Plating zurückgegriffen werden, ohne den erfindungsgemäßen Grundgedanken zu verlassen.By the direct adjustment of the metal grid on the doping structure itself otherwise occurring positioning inaccuracies in the production of selective dopants can be avoided. This allows the highly doped area to be more accurately confined to the area under the metallization which results in the desired positive effects on the efficiency of the solar cell. For the contact metallization can be used not only on the known screen printing technique, but also on a stencil printing or a so-called aerosol printing with a corresponding plating, without departing from the inventive concept.
Im Gegensatz zur bekannten Kantenjustierung fällt die zusätzliche Unge- nauigkeit durch möglicherweise raue oder schräg verlaufende Kanten weg.In contrast to the known edge adjustment, the additional inaccuracy disappears due to possibly rough or oblique edges.
Auch gegenüber Lasermarkierungen ergibt sich ein weiterer Vorteil, da die vorgeschlagene Technologie der unmittelbaren Justage von vornherein Schädigungen im Substrat durch die Lasermarkierung ausschließt. Also compared to laser markings, there is another advantage, since the proposed technology of immediate adjustment excludes damage in the substrate from the outset by the laser marking.

Claims

Patentansprüche claims
1. Verfahren zur Herstellung von Halbleiterbauelementen unter Nutzung von Dotierungstechniken, wobei während der Prozessierung eine Abfolge von Schichten erzeugt wird, welche exakt zueinander zu positionieren sind, dadurch gekennzeichnet, dass eine im Halbleitersubstrat erzeugte selektiv dotierte Struktur oder einen Dotierungsgradient mittels einer infratorempfindlichen Kameraeinrichtung in ihrer Position im Substrat ermittelt und die so aufgefundene Position unmittelbar oder mittelbar für die Justage des folgenden Prozessierungs- schritts genutzt wird.1. A method for producing semiconductor devices using doping techniques, wherein during the processing a sequence of layers is generated, which are to be positioned exactly to each other, characterized in that a generated in the semiconductor substrate selectively doped structure or a doping gradient by means of a infratorempfindlichen camera device in their Position determined in the substrate and the position thus found is used directly or indirectly for the adjustment of the following processing step.
2. Verfahren nach Anspruch 1, gekennzeichnet durch dessen Anwendung bei der Herstellung einer Halbleiter-Solarzelle mit selektivem Emitter.2. The method according to claim 1, characterized by its application in the manufacture of a semiconductor solar cell with selective emitter.
3. Verfahren nach Anspruch 1, gekennzeichnet durch dessen Anwendung bei der Herstellung einer Rückseitenkontakt-Halbleiter- Solarzelle.3. The method according to claim 1, characterized by its application in the manufacture of a back-contact semiconductor solar cell.
4. Verfahren zur Herstellung einer Silizium-Solarzelle mit selektivem Emitter sowie Metallisierung zur Kontaktfingererzeugung, wobei die Emitterbereiche unterhalb der Kontaktfinger eine lokal hohe Dotierungskonzentration besitzen, dadurch gekennzeichnet, dass zur Justage der Metallisierung für die Erzeugung der Kontaktfinger die selektiv dotierte Struktur mittels einer IR-empfindlichen Kameraeinrichtung in ihrer Position in dem Wafer ermittelt und der Metallisierungsschritt unter Nutzung der visualisierten Position ausgerichtet wird.4. A method for producing a silicon solar cell with selective emitter and metallization for contact finger generation, wherein the emitter regions below the contact fingers have a locally high doping concentration, characterized in that for adjusting the metallization for the generation of the contact fingers, the selectively doped structure by means of an IR detected sensitive camera device in its position in the wafer and the metallization step is aligned using the visualized position.
5. Verfahren nach Anspruch 4, dadurch gekennzeichnet, dass der Wafer zur Positionsermittlung der selektiv dotierten Struktur kurzzeitig einer Wärmebehandlung unterzogen wird. 5. The method according to claim 4, characterized in that the wafer for the position determination of the selectively doped structure is briefly subjected to a heat treatment.
6. Verfahren nach Anspruch 4 oder 5, dadurch gekennzeichnet, dass der Wafer einer IR-Durchlicht- oder einer IR-Auflicht-Bestrahlung unterzogen und die transmittierte oder emittierte infrarote Strahlung zur Visualisierung der selektiv dotierten Struktur genutzt wird, um hieran das Justieren des Metallisierungsschritts unmittelbar auszuführen.6. The method according to claim 4 or 5, characterized in that the wafer is subjected to an IR transmitted light or IR incident light irradiation and the transmitted or emitted infrared radiation is used for visualization of the selectively doped structure, in order to adjust the metallization step immediately execute.
7. Verfahren nach einem der Ansprüche 4 bis 6, dadurch gekennzeichnet, dass die selektiv dotierte Struktur reduzierte Abmessungen aufweist, wobei die dotierte Fläche exakt auf das Gebiet der aufzubringenden Metallisierung begrenzt bleibt.7. The method according to any one of claims 4 to 6, characterized in that the selectively doped structure has reduced dimensions, wherein the doped surface remains exactly limited to the area of the applied metallization.
8. Verfahren nach einem der Ansprüche 4 bis 7, dadurch gekennzeichnet, dass die Metallisierung mittels Siebdruck, Schablonendruck oder Aerosol-Druck ausgeführt wird . 8. The method according to any one of claims 4 to 7, characterized in that the metallization is carried out by means of screen printing, stencil printing or aerosol printing.
PCT/EP2010/050765 2009-03-04 2010-01-25 Method for producing semiconductor components using doping techniques WO2010099998A2 (en)

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