WO2010098604A2 - Appareil de recuit comprenant l'utilisation d'un plasma - Google Patents

Appareil de recuit comprenant l'utilisation d'un plasma Download PDF

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Publication number
WO2010098604A2
WO2010098604A2 PCT/KR2010/001199 KR2010001199W WO2010098604A2 WO 2010098604 A2 WO2010098604 A2 WO 2010098604A2 KR 2010001199 W KR2010001199 W KR 2010001199W WO 2010098604 A2 WO2010098604 A2 WO 2010098604A2
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Prior art keywords
plasma
plasma torch
flame
module
annealing
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PCT/KR2010/001199
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English (en)
Korean (ko)
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WO2010098604A3 (fr
Inventor
권오경
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Kwon Oh Kyung
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Priority to KR1020107004366A priority Critical patent/KR101121078B1/ko
Publication of WO2010098604A2 publication Critical patent/WO2010098604A2/fr
Publication of WO2010098604A3 publication Critical patent/WO2010098604A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/34—Details, e.g. electrodes, nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to annealing apparatus using plasma, and more particularly to annealing objects used in various products such as semiconductors, flat panel displays (FDDs), flexible displays, solar cells, sensors, LEDs, and OLEDs.
  • the present invention relates to an annealing apparatus for reducing the cost required to shorten and shortening annealing time of an object.
  • a variety of products such as semiconductors, flat panel displays (FPDs), flexible displays, solar cells, sensors, LEDs, and OLEDs are laminated with a silicon thin film such as polycrystalline silicon in a conventional manufacturing process.
  • Impurities are doped onto a predetermined region on the substrate, and then the impurities are diffused or activated by heat treatment to form a source or a drain, to recover the crystal breakage by implantation of the impurities or to crystallize the amorphous state region
  • an annealing step was used to enable various functions.
  • the annealing step consists only of heat treatment, expensive and difficult to handle heat resistant materials such as quartz must be used as the substrate. This not only raises production costs but also limits the degree of freedom of the processing equipment.
  • the annealing speed is slow, and there is still a problem of price increase due to expensive equipment, and the time required for annealing of the substrate is increased due to the large area of the substrate. There was a problem that the increase, the cost according to the increased time is also increased.
  • the temperature of the substrate is increased during the annealing process, and the degree to which the substrate is annealed varies according to the time and temperature at which the substrate is annealed.
  • the type and state of the substrate is changed, there is a problem that a condition suitable for the type and state of the new substrate should always be applied to the annealing process.
  • the present invention has been made to solve the above-mentioned conventional problems, and an object of the present invention is to provide an annealing apparatus using plasma for annealing an object.
  • Another object of the present invention is to provide an annealing apparatus using a plasma provided with a plurality of plasma torch to shorten the annealing time.
  • Another object of the present invention is to use a plasma to control the temperature and heating time of the object to change the annealing conditions in accordance with the measured temperature by measuring the temperature of the substrate in the process of annealing the substrate in the optimum annealing conditions It is to provide an annealing device.
  • the plasma torch module is generated by the arc discharge is heated by the plasma torch module and the flame of the plasma torch are provided to allow relative movement with the object.
  • an annealing apparatus using a plasma comprising a stage on which an object is seated and transported.
  • the plasma torch module according to an embodiment of the present invention may move in a direction crossing the transfer direction of the stage.
  • the width of the flame generated by the plasma torch module may be annealed over the entire width direction of the object so that the plasma torch module corresponds to the width of the object.
  • the plasma torch module may include a plurality of plasma torches to shorten an annealing time by widening an area where the object is annealed at one time.
  • the plurality of plasma torches are provided with areas where the objects are annealed by the flames of the plurality of plasma torches are spaced apart from each other, and the areas where the objects are annealed by the torch by relative transfer of the plasma torch module and the objects. May be made continuous with the group annealed region.
  • the plurality of plasma torches may be inclined so that at least one of the plurality of plasma torches is inclined so that regions of the object to be annealed by the flames of the plurality of plasma torches are continuous with each other. Can be.
  • the stage according to an embodiment of the present invention may further comprise a control unit for controlling the temperature and heating time of the object heated by the flame of the plasma torch.
  • control unit may further comprise a sensor for measuring the temperature of the object fixed to the stage.
  • the control unit may control the relative transfer speed of the stage and the plasma torch according to the temperature measured by the sensor.
  • the controller may control the distance between the object and the object by controlling the distance between the object and the plasma torch.
  • the plasma torch module includes a power supply unit for supplying power to the cathode and the anode of the plasma torch, the control unit controls the amount of power supplied to the power supply unit of the plasma torch You can adjust the intensity of the flame.
  • the plasma torch module includes a power supply unit for supplying power to the cathode and the anode of the plasma torch and a magnetic field forming device for forming a magnetic field at the arc generation point generated by the cathode and the anode;
  • the control unit controls the magnetic field formed in the magnetic field forming apparatus so that the flame generating position of the plasma torch can be adjusted.
  • a plasma torch module in which a plasma flame is generated by arc discharge is formed along a width direction of an object, and the plasma torch module and the plasma are generated in the plasma flame more than a width range of the object.
  • An annealing apparatus using a plasma configured to include a stage in which the object is seated and transferred to be heated while passing through a plasma flame generated by the torch module may be provided.
  • the annealing apparatus using the plasma according to an embodiment of the present invention may be provided with a control unit for controlling the temperature and heating time of the object is provided with a sensor for measuring the temperature of the object seated on the stage.
  • the controller may control the transfer of the stage according to the temperature measured by the sensor.
  • control unit may control the amount of power supplied to the plasma torch module to adjust the intensity of the plasma torch flame.
  • the plasma torch module forms a magnetic field such that a power supply unit supplying power to the cathode and the anode of the plasma torch and an arc generated by the cathode and the anode are not concentrated on a portion of the anode. It is made to include a magnetic field forming device, the control unit may control the flame generating position of the plasma torch by controlling the intensity of the magnetic field formed in the magnetic field forming device.
  • An annealing apparatus using a plasma according to the present invention having the above configuration has the following effects.
  • the heat treatment means for applying heat to the object has an advantage of being easy to apply to the annealing process of the object to be large area with the effect of cost reduction by using the plasma torch.
  • the object can be processed in-line in one process, and thus, an annealing can be efficiently performed.
  • the cost is reduced, and the annealing speed is improved, compared to the annealing apparatus using a laser which has been used in the prior art.
  • the flame of the plasma torch is generated to correspond to the width of the object, so that the annealing of the object can be completed by only one transfer, so that the annealing time can be shortened, and the object can be continuously annealed.
  • the annealing time is shortened by providing a plurality of plasma torch to enlarge the region to be annealed to the object.
  • the annealing of the object can be efficiently annealed by controlling the optimum annealing condition of the object that changes according to the change of the kind and state of the object.
  • FIG. 1 is a perspective view of an annealing apparatus according to an embodiment of the present invention.
  • FIG. 2 is a configuration diagram showing the internal configuration of the plasma torch of FIG.
  • FIG. 3 is a perspective view showing the configuration of the stage of FIG. 1;
  • FIG. 4 is a state diagram illustrating a process of annealing a substrate by the annealing apparatus of FIG. 1;
  • FIG. 5 is a state diagram illustrating a process of annealing by the flame of the plasma torch module corresponding to the width of the object
  • FIG. 6 is a state diagram illustrating a process of annealing a substrate by an annealing apparatus in which a plurality of plasma torches are arranged in a line according to another embodiment of the present invention
  • FIG. 7 is a state diagram illustrating a process in which a substrate is annealed by an annealing apparatus in which a plurality of plasma torches are arranged in a staggered manner as an example of FIG. 6;
  • FIG. 8 is a state diagram illustrating a process of annealing a substrate by an annealing apparatus in which a plurality of plasma torches are disposed according to another embodiment of the present invention
  • FIG. 9 is a block diagram showing a temperature measurement process of a substrate in the annealing process of the annealing apparatus according to an embodiment of the present invention.
  • FIG. 10 is a block diagram of an annealing apparatus according to an embodiment of the present invention.
  • FIG. 11 is a graph showing data obtained by measuring a temperature change with time of a substrate according to a transfer speed of the substrate;
  • FIG. 12 is a graph illustrating data of measuring temperature change with time of a substrate according to a distance between a plasma torch and a substrate;
  • FIG. 14 is a schematic perspective view of a plasma inverting module according to another embodiment of the present invention.
  • the object to be annealed by the annealing device is used in the manufacturing process of various substrates such as semiconductors, flat panel displays (FDD), flexible displays, solar cells, sensors, LEDs, OLEDs.
  • substrates such as semiconductors, flat panel displays (FDD), flexible displays, solar cells, sensors, LEDs, OLEDs.
  • FIGS. 1 to 3 are perspective views of an annealing apparatus according to an embodiment of the present invention
  • FIG. 2 is a configuration diagram illustrating an internal configuration of the plasma torch of FIG. 1
  • FIG. 3 is a perspective view illustrating a configuration of the stage of FIG. 1.
  • the plasma torch module 200 in which the plasma torch 200, in which the plasma flame F is generated by the arc discharge may be relatively moved with the object S. And a stage 300 on which the object S heated by the flame F of the plasma torch module 200 is seated and transported.
  • the plasma torch module 200 may be transported to an x-axis, a y-axis, and a z-axis by the module transfer member 100.
  • the module transfer member 100 is a coupling member 170 to which the plasma torch module 200 is coupled, and a first transfer member 110 that is responsible for x-axis transfer of the plasma torch module 200. And a second transfer member 130 in charge of the y-axis transfer of the plasma torch module 200 and a vertical transfer member 150 in charge of the z-axis transfer of the plasma torch module 200.
  • the first transfer member 110 is coupled to the second transfer member 130, and a first transfer guide 112 is provided to allow the second transfer member 130 to be transferred on the x-axis.
  • One side of the second transfer member 130 is coupled to the first transfer guide 112 of the first transfer member 110, and the other side thereof is coupled to the vertical transfer member 150 to provide the vertical transfer member 150.
  • the second transfer guide 132 is provided in a direction intersecting with the second transfer guide 132 so as to be transferred on the y axis.
  • One side of the vertical transfer member 150 is coupled to the second transfer guide 132 of the second transfer member 130, and the other side thereof is coupled to the coupling member 170 such that the coupling member 170 is z-axis.
  • the vertical transfer guide 160 is provided to be transferred to.
  • One side of the coupling member 170 is coupled to the vertical transfer guide 160 of the vertical transfer member 150, and the other side of the coupling member 170 is coupled to the plasma torch module 200.
  • the plasma torch module 200 includes one plasma torch 200, and the plasma torch 200 includes a cathode 210, an anode 230, and the cathode (as shown in FIG. 2).
  • a magnetic field is formed to form a magnetic field at an arc generation point generated by the gas inlet pipe 250 through which the activation gas flows between the 210 and the anode 230, and the anion flowing out of the cathode 210 contacts the anode 230.
  • Device 270 is configured.
  • the plasma torch 200 includes a power supply unit (not shown) for supplying power by electrically connecting the cathode 210 and the anode 230, and when the power is supplied from the power supply unit, an arc discharge occurs. Flame F is generated.
  • the power supply unit may supply power to the plasma torch module 200 using at least one of DC, AC, RF, or microwave.
  • the gas introduced through the gas inlet pipe 250 may be an inert gas such as argon (Ar) or nitrogen (N 2).
  • the present invention is not limited thereto, and may also be oxygen (O 2) or air, which is an active gas.
  • the magnetic field forming apparatus 270 is provided around the anode 230 in which the arc is generated to prevent anion from flowing out of the cathode 210 by concentrating at a specific point of the anode 230 to generate an arc. As a result, the life of the anode 230 can be extended.
  • the magnetic field forming apparatus 270 may be provided in the form of a solenoid to control the strength of the magnetic field.
  • the present invention is not limited thereto, and a permanent magnet capable of forming a magnetic field may also be used.
  • the stage 300 may include a substrate fixing member 370 for fixing the substrate and a first stage responsible for x-axis transfer of the object S. 310, a second stage 330 that is responsible for the y-axis transfer of the object S, and a third stage 350 that is responsible for the z-axis transfer of the object S is configured.
  • One surface of the substrate fixing member 370 fixes the object S, and the other surface of the substrate fixing member 370 is coupled to the third stage 350.
  • the third stage 350 is provided with a vertical displacement member 360 on one surface, is coupled to the substrate fixing member 370 is responsible for the z-axis transfer of the object (S).
  • the other surface is coupled to the second stage.
  • the second stage 330 is provided with a second displacement member 332 on one surface thereof, and is coupled to the substrate fixing member 370 to allow the substrate fixing member 370 to be transferred in the y-axis direction.
  • the other surface is coupled to the first stage 310.
  • the first stage 310 is provided in a direction in which the first displacement member 312 intersects with the second displacement member 332 on one surface thereof, and is coupled to the second stage 330 to form the second stage 330. ) Can be transported in the x-axis direction.
  • FIG. 4 is a state diagram illustrating a process of annealing a substrate by the annealing apparatus of FIG. 1
  • FIG. 5 is a state diagram illustrating a process of annealing by a flame of a plasma torch module corresponding to a width of an object
  • FIG. 6 is an embodiment of the present invention.
  • FIG. 9 is a state diagram illustrating a process of annealing a substrate by an annealing apparatus in which a plurality of plasma torches are disposed, according to another exemplary embodiment.
  • the module transfer member 100 or the stage ( Along the annealing direction B1 determined by the transfer of 300, the area C is gradually secured after passing through the unannealed area A of the object S.
  • FIG. 4 shows that starting with the area B of the object S by the plasma flame F of the plasma torch module 200, the module transfer member 100 or the stage ( Along the annealing direction B1 determined by the transfer of 300, the area C is gradually secured after passing through the unannealed area A of the object S.
  • the annealing direction B1 is not limited to that shown in FIG. 4 but may be changed by the transfer directions of the module transfer member 100 and the stage 300.
  • the width of the flame (F) generated by the plasma torch module 200 is the width of the object (S)
  • the object S is annealed in a process in which the module transfer member 100 or the stage 300 is transferred in the longitudinal direction of the object S.
  • the annealing direction B1 by the transfer of the module transfer member 100 or the stage 300 is performed.
  • the object S is gradually annealed in the unannealed region A to secure the region C in which the annealing is completed.
  • an annealing may be completed by one transfer in which the region B annealed by the flame F generated in the plasma torch module 200 corresponds to the width of the object S. .
  • the flame F is generated by the plasma torch module 200 to correspond to the width of the object S, so that the annealing of the object S may be completed by only one transfer of the stage 300.
  • the cost can be reduced due to the shorter annealing time. Moreover, it becomes possible to anneal the object S continuously.
  • the plasma torch module 200 in the annealing of the object (S), is composed of a plurality of plasma torch 200 to anneal the object (S).
  • the object S to be large-area can extend the region B to be annealed by one transfer of the plasma torch module 200.
  • the plasma torch module 200 includes three plasma torches, but the number thereof may be freely changed according to the size of the object S. FIG. .
  • the object S when annealing is started along the annealing directions B1, B2, and B3 determined by the transfer of the module transfer member 100 or the stage 300, the object S is not annealed. After the region A, the region C where the annealing is completed is secured.
  • a plurality of the plasma torch 200 is provided may be arranged in a zigzag form.
  • an area B of the object S is annealed by a flame generated in each of the plurality of plasma torches 200.
  • the module transfer member 100 or the stage 300 may be continuously connected to each other.
  • the plasma module 200 may be annealed by a flame generated from each of the plurality of plasma torches 202, 204, and 206. At least one of the plurality of plasma torches 202, 204, and 206 is provided to be inclined such that the regions B of the plurality of regions B are continuous to each other.
  • the plurality of plasma torch 202, 204, 206 is provided with three, the plasma torch 204, 206 disposed on the left and right in the direction of the plasma torch 202 is disposed in the center
  • the inclination is exemplified, the number and arrangement can be modified as much as the design.
  • the plasma torch 204 disposed on the left side of the plurality of plasma torches 202, 204, and 206 centered on the plasma torch 202 disposed at the center thereof is inclined to the right toward the center.
  • the plasma torch 206 disposed on the right side is provided to be inclined to the left side toward the center.
  • the object S is annealed by the flame of the plasma torch 202 disposed at the center and the flame of the plasma torch 204 and 206 disposed at the left and right sides and inclined toward the center.
  • the regions B are continuous with each other.
  • the object S is gradually annealed in the unannealed region A along the annealing direction B1 by the transfer of the module transfer member 100 or the stage 300 to secure the region C where the annealing is completed. do.
  • the area B where the object S is annealed by the flame of each of the plurality of plasma torches is enlarged than when the plasma torch 200 is provided, thereby reducing annealing time.
  • the control unit 400 is further provided to describe a feedback process, which is one of processes for annealing the object S, as follows.
  • 9 is a block diagram showing a temperature measurement process of the substrate in the annealing process of the annealing device according to an embodiment of the present invention
  • Figure 10 is a block diagram of an annealing device according to an embodiment of the present invention.
  • the object S fixed on the substrate fixing member 370 of the stage 300 is annealed by the plasma flame F of the plasma torch module 200, the object is controlled by the controller 400.
  • the temperature of (S) is measured.
  • the controller 400 is a component that controls a condition under which the object S is annealed by controlling a temperature at which the object S is heated and a time for heating.
  • controller 400 controls the temperature of the object S fixed on the substrate fixing member 370 of the stage 300 in the process of being annealed by the plasma flame F of the plasma torch module 200.
  • the sensor 410 to measure may be further provided.
  • the senor 410 is provided with a laser for irradiating a laser beam to the object (S) heated by the plasma flame (F) of the plasma torch module 200 is irradiated to the object (S) It is responsible for measuring the temperature applied to the object (S) by measuring the refractive index reflected by the laser beam.
  • the present invention is not limited thereto, and the sensor 410 may measure a temperature of the flame in contact with the object S by mounting a temperature sensor around the plasma flame F generated by the plasma torch module 200. . That is, any method for measuring the temperature used to anneal the object S is possible.
  • the controller 400 controls the transfer speed of the stage 300 and the plasma torch module 200 according to the temperature measured by the sensor 410 to optimize the target S.
  • the annealing conditions are controlled.
  • the annealing condition of the object (S) is the temperature of the object (S) to be annealed by the plasma flame (F) of the plasma torch module 200, the plasma flame of the plasma torch module (200) of the object (S) F) and the distance between the object S and the plasma torch 200 (the position of the flame in contact with the substrate).
  • the experiment data for obtaining the optimum conditions for annealing the object S is 11 to 13 are the same.
  • FIG. 11 is a graph measuring a temperature change of the object S according to a time when the object S is exposed to the plasma flame F of the plasma torch module 200.
  • the time for heating the object (S) is shortened so that the maximum temperature of the object (S) is low and is injected into the object (S).
  • the time for heating the object (S) is long, so that the maximum temperature of the object (S) is high and the object (S) ) Will be more energy.
  • the controller 400 controls the relative transfer speed of the object S and the plasma torch module 200 according to the temperature measured by the sensor 410 in the process of annealing the object S.
  • FIG. The temperature and time at which the object S is heated can be adjusted, and the transfer speed of the object S according to the optimum temperature can be controlled according to the type and shape of the object S.
  • At least one of the transport speed of the stage 300 or the transport speed of the plasma torch module 200 may be changed depending on the temperature of the object S measured during the annealing of the object S. It is adjustable.
  • FIG. 12 is a graph measuring a temperature change of the object S according to the distance between the plasma torch 200 and the object S. Referring to FIG. Through this, it can be seen that the degree of annealing is changed by changing the temperature of the object S according to the position of the plasma flame F of the plasma torch module 200 in contact with the object S.
  • the controller 400 may measure the temperature of the object S to adjust the optimal distance between the object S and the plasma torch 200.
  • the temperature of the plasma flame (F) generated from the plasma torch module 200 is different depending on the position, and applied to the object (S) in accordance with the position of the flame (F) in contact with the object (S). Losing calories can vary.
  • the distance between the object S and the plasma torch 200 is controlled to adjust the position where the plasma flame F of the plasma torch module 200 is in contact with the object S. It can be annealed at this optimum condition.
  • the distance between the plasma torch 200 and the object S is adjusted to adjust the distance of the object S.
  • the optimum annealing conditions can be controlled.
  • the vertical transfer guide 160 of the torch transfer member 100 or the third stage 350 of the stage 300. Can be adjusted.
  • the magnetic field strength of the magnetic field forming apparatus 270 may be adjusted to adjust the position where the plasma flame F of the plasma torch module 200 is in contact with the object S.
  • the contact point at which the negative ions flowing out of the cathode 210 contact the anode 230 is changed to generate the arc discharge. It is to adjust the position of the plasma flame (F) of the plasma torch module 200.
  • FIG. 13 is a graph measuring the degree to which the object S is annealed according to the amount of power supplied from a power supply unit (not shown) of the plasma torch 200 and the transfer speed of the object S.
  • control unit 400 controls the amount of power supplied from the power supply unit (not shown) to the cathode 210 and the anode 230, such as a transfer speed of the object S.
  • the condition under which S) is crystallized can be controlled.
  • the plasma torch module 200 is controlled by adjusting the x-axis and y-axis displacements of the plasma torch module 200 and the stage 300.
  • the amount of heat applied to the object S by the plasma flame (F) can be adjusted.
  • the control unit 400 is the z-axis displacement of the plasma torch 200 and the stage 300 or By controlling the position of the plasma flame (F) of the plasma torch module 200 in contact with the substrate by changing the magnetic field strength of the magnetic field forming device 270 of the plasma torch 200 to control the annealing of the object (S). Can be.
  • control unit 400 controls the amount of power supplied from a power supply unit (not shown) of the plasma torch 200 to adjust the intensity of the plasma flame (F) of the plasma torch module 200 to the target (S).
  • the optimum annealing condition of N may be satisfied.
  • the controller 400 may select and use at least one of the various control methods described above as well as use them in combination. It is also possible.
  • the plasma torch module 200 is provided to be transportable as an example, but in the present embodiment, the annealing apparatus using the plasma to which the plasma torch module 200 is fixed will be described.
  • the plasma torch in which the plasma flame F is generated by arc discharge, is formed along the width direction of the object S, and the plasma flame F is the object S.
  • Stage 300 to which the object (S) is seated and transported so as to pass through the plasma torch module 200 and the plasma flame (F) generated by the plasma torch module 200 generated over the width range of It is configured to include.
  • the plasma torch module 200 is fixed, and the object S, which is seated and transferred to the stage 300 through the plasma flame F, is annealed.
  • the plasma torch is formed long along the width direction of the object S, and as the plasma flame F is generated over the width range of the object S, In comparison with the above-described embodiment, the structure according to the transfer can be omitted. According to the present embodiment, the length of the plasma torch is formed according to the size of the object 200.
  • the plasma torch module 200 may be formed in a form in which one plasma torch is provided, but is not limited thereto.
  • a plurality of plasma torches may be provided in a single module form to form one plasma torch flame ( May be configured to generate F).
  • the stage 300 according to the present embodiment is configured in the same manner as the above-described embodiment, and a description thereof will be omitted.
  • the stage 300 is transferred so that the object S passes through the plasma torch flame F.
  • the object S is annealed. Therefore, the annealing time is shortened, and it becomes possible to anneal a plurality of objects S continuously, thereby reducing the cost required for the annealing process.
  • control unit 400 for controlling the temperature and the heating time of the object (S) heated by the flame (F) of the plasma torch is further provided a feedback process that is one of the process of annealing the object (S) This is done in the same manner as in the above-described embodiment.
  • the plasma torch module 200 is fixed, and the plasma torch flame F is generated over the width range of the object S. It is unnecessary, and there is an effect that the control according to the transfer of the stage 300 is simplified.
  • the controller 400 controls the transfer of the stage 300 according to the temperature measured by the sensor 410. That is, the temperature of the object S is controlled by controlling the distance between the object S and the plasma torch flame F through the vertical transfer of the stage 300, thereby controlling the temperature of the stage 300.
  • the heating time of the object S is controlled by controlling the feed rate.
  • the intensity of the plasma torch flame (F) may be adjusted by controlling the power supplied to the plasma torch module 200 using at least one of DC, AC, RF, or microwave.
  • the magnetic field forming device that plays a role of extending the life of the anode 230 by preventing the anion flowing out of the cathode 210 in the plasma torch 200 to be concentrated at a point of the anode 230 270 is provided, the plasma torch generated by the arc discharge by changing the contact point of the negative ion flowing out of the cathode 210 in contact with the anode 230 when the magnetic field strength of the magnetic field forming device 270 is adjusted It is also possible to adjust the position of the plasma flame (F) of the module 200.
  • torch transfer member 110 first transfer member
  • first transfer guide 130 second transfer member
  • insulation 250 outer wall
  • stage 310 first stage
  • first displacement member 330 second stage
  • control unit 410 sensor

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

L'invention concerne un appareil de recuit comprenant l'utilisation d'un plasma, qui recuit des articles cibles utilisés dans une pluralité de produits tels que des semi-conducteurs, des écrans plats (FPD), des écrans flexibles, des cellules solaires, des capteurs, des LEDs, et des LEDs organiques. L'appareil de recuit de l'invention comprend; un module pistolet à plasma, dans lequel le pistolet à plasma destiné à générer un jet de plasma par une décharge en arc est placé de manière à être mobile par rapport à un article cible; et un étage sur lequel l'article cible à chauffer par le jet du pistolet à plasma est chargé et transporté.
PCT/KR2010/001199 2009-02-25 2010-02-25 Appareil de recuit comprenant l'utilisation d'un plasma WO2010098604A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020107004366A KR101121078B1 (ko) 2009-02-25 2010-02-25 플라즈마를 이용한 어닐링 장치

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2009-0015988 2009-02-25
KR20090015988 2009-02-25
KR20090015968 2009-02-25
KR10-2009-0015968 2009-02-25

Publications (2)

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WO2010098604A2 true WO2010098604A2 (fr) 2010-09-02
WO2010098604A3 WO2010098604A3 (fr) 2010-11-11

Family

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KR (1) KR101121078B1 (fr)
WO (1) WO2010098604A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113042742A (zh) * 2021-03-17 2021-06-29 南京工业大学 一种用于钛粉制备深度精炼装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101299465B1 (ko) * 2013-04-26 2013-08-29 (주)한아기계 인스트루먼트 패널 코어의 플라즈마 화염처리 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010091250A (ko) * 2000-03-14 2001-10-23 황 철 주 반도체 소자 제조용 플라즈마 스프레이 장치 및 이를이용한 반도체 소자 제조방법
KR20050050412A (ko) * 2003-11-25 2005-05-31 세메스 주식회사 웨이퍼 에지 식각 장치
JP2008047927A (ja) * 2007-09-03 2008-02-28 National Institute Of Advanced Industrial & Technology マイクロプラズマｃｖｄ装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010091250A (ko) * 2000-03-14 2001-10-23 황 철 주 반도체 소자 제조용 플라즈마 스프레이 장치 및 이를이용한 반도체 소자 제조방법
KR20050050412A (ko) * 2003-11-25 2005-05-31 세메스 주식회사 웨이퍼 에지 식각 장치
JP2008047927A (ja) * 2007-09-03 2008-02-28 National Institute Of Advanced Industrial & Technology マイクロプラズマｃｖｄ装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113042742A (zh) * 2021-03-17 2021-06-29 南京工业大学 一种用于钛粉制备深度精炼装置

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WO2010098604A3 (fr) 2010-11-11
KR101121078B1 (ko) 2012-06-12
KR20100108321A (ko) 2010-10-06

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