WO2010093781A2 - Solution based non-vacuum method and apparatus for preparing oxide materials - Google Patents
Solution based non-vacuum method and apparatus for preparing oxide materials Download PDFInfo
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- WO2010093781A2 WO2010093781A2 PCT/US2010/023878 US2010023878W WO2010093781A2 WO 2010093781 A2 WO2010093781 A2 WO 2010093781A2 US 2010023878 W US2010023878 W US 2010023878W WO 2010093781 A2 WO2010093781 A2 WO 2010093781A2
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- 239000000463 material Substances 0.000 title claims abstract description 196
- 238000000034 method Methods 0.000 title claims abstract description 84
- 239000000758 substrate Substances 0.000 claims abstract description 138
- 230000008021 deposition Effects 0.000 claims abstract description 108
- 229910052751 metal Inorganic materials 0.000 claims abstract description 62
- 239000002184 metal Substances 0.000 claims abstract description 62
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 61
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 61
- 239000001301 oxygen Substances 0.000 claims abstract description 61
- 230000008569 process Effects 0.000 claims abstract description 56
- 238000005137 deposition process Methods 0.000 claims abstract description 16
- 239000003792 electrolyte Substances 0.000 claims description 35
- 239000011701 zinc Substances 0.000 claims description 16
- 229910052725 zinc Inorganic materials 0.000 claims description 15
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 14
- 238000012544 monitoring process Methods 0.000 claims description 10
- 239000002019 doping agent Substances 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 8
- 238000009713 electroplating Methods 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 5
- 230000005587 bubbling Effects 0.000 claims description 4
- 238000000151 deposition Methods 0.000 abstract description 112
- 230000003213 activating effect Effects 0.000 abstract description 28
- 239000003795 chemical substances by application Substances 0.000 abstract description 26
- 239000004065 semiconductor Substances 0.000 abstract description 16
- 238000004070 electrodeposition Methods 0.000 abstract description 12
- 230000004913 activation Effects 0.000 abstract description 9
- 238000001771 vacuum deposition Methods 0.000 abstract description 6
- 230000001464 adherent effect Effects 0.000 abstract description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 123
- 239000011787 zinc oxide Substances 0.000 description 61
- 230000000873 masking effect Effects 0.000 description 32
- 239000000243 solution Substances 0.000 description 21
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 15
- 229910052709 silver Inorganic materials 0.000 description 15
- 239000004332 silver Substances 0.000 description 15
- 238000001994 activation Methods 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000001035 drying Methods 0.000 description 10
- 239000002253 acid Substances 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 229910044991 metal oxide Inorganic materials 0.000 description 7
- 150000004706 metal oxides Chemical class 0.000 description 7
- 239000010935 stainless steel Substances 0.000 description 7
- 229910001220 stainless steel Inorganic materials 0.000 description 7
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 6
- 238000010924 continuous production Methods 0.000 description 6
- 239000002001 electrolyte material Substances 0.000 description 6
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 6
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000013019 agitation Methods 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 238000004891 communication Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 229910001316 Ag alloy Inorganic materials 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- -1 Zn(OH)2 Chemical compound 0.000 description 4
- 230000035508 accumulation Effects 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 4
- 150000007513 acids Chemical class 0.000 description 4
- 150000004679 hydroxides Chemical class 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000002318 adhesion promoter Substances 0.000 description 3
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 3
- 239000004327 boric acid Substances 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000002659 electrodeposit Substances 0.000 description 3
- 239000001530 fumaric acid Substances 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 239000004310 lactic acid Substances 0.000 description 3
- 235000014655 lactic acid Nutrition 0.000 description 3
- 239000001630 malic acid Substances 0.000 description 3
- 235000011090 malic acid Nutrition 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- 230000009102 absorption Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000002738 chelating agent Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 235000011087 fumaric acid Nutrition 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000013618 particulate matter Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- 229910021511 zinc hydroxide Inorganic materials 0.000 description 2
- YIROYDNZEPTFOL-UHFFFAOYSA-N 5,5-Dimethylhydantoin Chemical compound CC1(C)NC(=O)NC1=O YIROYDNZEPTFOL-UHFFFAOYSA-N 0.000 description 1
- 101100165186 Caenorhabditis elegans bath-34 gene Proteins 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XURCIPRUUASYLR-UHFFFAOYSA-N Omeprazole sulfide Chemical compound N=1C2=CC(OC)=CC=C2NC=1SCC1=NC=C(C)C(OC)=C1C XURCIPRUUASYLR-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229930006000 Sucrose Natural products 0.000 description 1
- CZMRCDWAGMRECN-UGDNZRGBSA-N Sucrose Chemical compound O[C@H]1[C@H](O)[C@@H](CO)O[C@@]1(CO)O[C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 CZMRCDWAGMRECN-UGDNZRGBSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 159000000032 aromatic acids Chemical class 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000011067 equilibration Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 150000002471 indium Chemical class 0.000 description 1
- 229910000337 indium(III) sulfate Inorganic materials 0.000 description 1
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 1
- XGCKLPDYTQRDTR-UHFFFAOYSA-H indium(iii) sulfate Chemical compound [In+3].[In+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O XGCKLPDYTQRDTR-UHFFFAOYSA-H 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000011236 particulate material Substances 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- IWZKICVEHNUQTL-UHFFFAOYSA-M potassium hydrogen phthalate Chemical compound [K+].OC(=O)C1=CC=CC=C1C([O-])=O IWZKICVEHNUQTL-UHFFFAOYSA-M 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009103 reabsorption Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 238000012306 spectroscopic technique Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000005720 sucrose Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- DPJRMOMPQZCRJU-UHFFFAOYSA-M thiamine hydrochloride Chemical compound Cl.[Cl-].CC1=C(CCO)SC=[N+]1CC1=CN=C(C)N=C1N DPJRMOMPQZCRJU-UHFFFAOYSA-M 0.000 description 1
- 229960000344 thiamine hydrochloride Drugs 0.000 description 1
- 235000019190 thiamine hydrochloride Nutrition 0.000 description 1
- 239000011747 thiamine hydrochloride Substances 0.000 description 1
- FAKFSJNVVCGEEI-UHFFFAOYSA-J tin(4+);disulfate Chemical compound [Sn+4].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O FAKFSJNVVCGEEI-UHFFFAOYSA-J 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- YJGJRYWNNHUESM-UHFFFAOYSA-J triacetyloxystannyl acetate Chemical compound [Sn+4].CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O YJGJRYWNNHUESM-UHFFFAOYSA-J 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- UGZADUVQMDAIAO-UHFFFAOYSA-L zinc hydroxide Chemical compound [OH-].[OH-].[Zn+2] UGZADUVQMDAIAO-UHFFFAOYSA-L 0.000 description 1
- 229940007718 zinc hydroxide Drugs 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/18—Electroplating using modulated, pulsed or reversing current
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/20—Electroplating using ultrasonics, vibrations
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/10—Electrodes, e.g. composition, counter electrode
- C25D17/12—Shape or form
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/10—Agitating of electrolytes; Moving of racks
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/615—Microstructure of the layers, e.g. mixed structure
- C25D5/617—Crystalline layers
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/627—Electroplating characterised by the visual appearance of the layers, e.g. colour, brightness or mat appearance
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D9/00—Electrolytic coating other than with metals
- C25D9/04—Electrolytic coating other than with metals with inorganic materials
- C25D9/08—Electrolytic coating other than with metals with inorganic materials by cathodic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
- C25D5/36—Pretreatment of metallic surfaces to be electroplated of iron or steel
Definitions
- This invention relates generally to the electro deposition of transparent, electrically conductive oxide materials and in particular to the deposition of transparent, electrically conductive metal oxide materials in connection with the fabrication of semiconductor devices, optical devices and the like. Most particularly, this invention relates to solution based methods and apparatus in which high quality layers of metal oxide materials are deposited onto substrates which have not been pretreated in a vacuum deposition process.
- a number of electronic devices incorporate one or more layers of transparent, electrically conductive material therein.
- Such devices include, but are not limited to, semiconductor devices such as electronic memory devices, photovoltaic devices, photo sensors, other photo responsive devices, display devices and the like.
- These layers are typically fabricated from transparent, electrically conductive metal oxide (TCO) materials; and, zinc oxide based materials comprise one particular TCO material.
- TCO transparent, electrically conductive metal oxide
- Transparent, electrically conductive zinc oxide materials are often not stoichiometrically pure, but typically incorporate species such as suboxides, hydroxides, ionic species, dopants and the like which can function to enhance electrical conductivity of the electronic device.
- metal and oxygen materials are meant to include materials based thereon and may also include suboxides, hydroxides, and other species.
- materials based on zinc and oxygen may also include suboxides of zinc, hydroxides of zinc such as Zn(OH) 2 , Zn 2+ ions (typically in the form of zinc salts) and other such species.
- zinc and oxygen sometimes referred to as “zinc oxide” or “zinc oxide material”
- other metal and oxygen materials such as tin and indium based material, may include oxides, suboxides, hydroxides and ionic species.
- the metal and oxygen materials may also include dopants or modifiers such as boron, which can function to tailor the electrical conductivity of the deposited oxide material (e.g. ZnO) layer and/or control the physical morphology of the deposited layer.
- dopants or modifiers such as boron
- the microtexture of the layer needs to be controlled so as to optimize the scattering of the reflected photons so as to maximize the opportunity of those photons to be absorbed by the overlying semiconductor layers. Therefore, the controllable deposition of high quality zinc oxide materials is important to the preparation of high efficiency photovoltaic devices.
- a back reflective layer of aluminum, silver or a silver alloy material is deposited on a substrate, and a layer of zinc oxide or other such metal and oxygen material is then deposited thereatop. It has been found that adhesion of electro deposited oxide materials to an aluminum, silver or silver alloy coated substrate can be poor.
- the prior art has found that deposition of a "seed" layer of a metal and oxygen material via a vacuum deposition process, such as the process of sputtering, evaporation, chemical vapor deposition, or combinations thereof, allows a subsequently electro deposited body of material to adhere.
- the present invention provides a method and apparatus whereby high quality zinc oxide and other transparent conductive oxide materials may be electro deposited onto a variety of substrates of the type utilized in high efficiency photovoltaic devices, without requiring that those substrates be pretreated in any type of vacuum based process. Furthermore, the present invention provides a method and apparatus whereby the deposition of the zinc oxide and other transparent conductive oxide materials may be limited to preselected portions of the substrate. Finally, the present invention provides a method and apparatus which is compatible with the high speed, roll-to-roll fabrication of large area, high efficiency, photovoltaic devices.
- a method for electro depositing a layer of a metal and oxygen material onto a substrate which has a deposition surface defined thereupon In accord with the invention, the deposition surface of the substrate web is contacted with a multidentate activating agent with multiple functional groups so as to produce an activated surface. Thereafter, a layer of a metal and oxygen material is electro deposited onto the activated surface. It is notable that the substrate is characterized in that it does not require the presence of any type of vacuum deposited metal and oxygen "seed layer" material on the deposition surface.
- the multidentate activating agent is employed in the form of a solution, such as an aqueous solution, and this agent may comprise one or more of boric acid, phosphoric acid, or a polycarboxylic acid as well as their salts, esters, and other such species.
- the multidentate activating agent may comprise ethylenediaminetetraacetic acid and its salts or some other such chelating agent.
- Some specific polycarboxylic acids which may be used in the present invention include phthalic acid, fumaric acid, malic acid, and lactic acid.
- the substrate material may be rinsed prior to having the layer of metal and oxygen material electro deposited thereupon.
- the deposition surface of the body of substrate material has a layer of aluminum, silver or a silver alloy reflective material deposited thereupon, and in some instances the metal and oxygen material is a zinc oxide material.
- the method of the present invention may be implemented in a batch process on a static substrate that is sequentially moved into an adjacent series of treatment stations; or more preferably the present invention may be implemented in a continuous process in which a web of substrate material is continuously advanced through said series of treatment stations.
- the first treatment station is an activating station in which the deposition surface of the web of substrate material is contacted with the multidentate activating agent.
- the web having the activated surface subsequently proceeds to a coating station in which a layer of the metal and oxygen material is electro deposited onto the activated surface of the web.
- a rinsing station may be disposed so as to rinse the web prior to and/or after the electro deposited coating. Further disclosed are systems for carrying out the method.
- a metal oxygen material is electro deposited onto a substrate in a process wherein at least a portion of the substrate is covered with a masking member which prevents the deposition of the metal and oxygen material onto those portions of the substrate to which it is affixed.
- the masking member may, in some instances, be magnetically affixable to the substrate.
- the electro deposition process is carried out on an elongated web of substrate material which is continuously advanced through a deposition system which includes a deposition station wherein the metal and oxygen material is deposited on the substrate.
- a belt-like body of masking material is brought into contact with a back surface of the substrate member while it is in the deposition station and while the metal and oxygen material is being deposited onto the front surface of the web of substrate material.
- the deposition system may include a biasing member such as a platen or series of rollers which urge the belt of masking material into contact with the substrate.
- the substrate member is maintained in a partiphobic orientation while the metal and oxygen material is being deposited thereonto so as to at least partially inhibit the incorporation of particulate material into the depositing layer of metal and oxygen material.
- a layer of metal and oxygen material is electroplated onto a substrate which is disposed in an electrolyte in a spaced apart relationship with an electrode.
- a power supply is operative, when energized, to establish a flow of electrical current through the electrode, the electrolyte and the substrate so as to deposit a layer of metal and oxygen material on the substrate.
- At least two of the following steps are implemented: inputting ultrasonic energy into the electrolyte during at least a portion of the time while the layer of metal and oxygen material is being deposited onto the substrate; periodically interrupting the flow of electrical current between the electrode, the electrolyte and the substrate while the layer of metal and oxygen material is being deposited; maintaining the substrate in a partiphobic orientation while the layer of metal and oxygen material is being deposited thereupon; bubbling a gas through the electrolyte; and energizing the power supply at a first level while a first portion of the metal and oxygen material is being deposited on the substrate so that the first portion is deposited at a first deposition rate, and thereafter energizing the power supply at a second level during the time that a second portion of the layer is being deposited atop the first portion so that the second portion is deposited at a second deposition rate.
- the second deposition rate is less than the first deposition rate.
- at least three of the foregoing steps are implemented.
- at least one more step from the following group is implemented: monitoring the composition of the electrolyte bath; monitoring the level of a dopant in the deposited metal and oxygen material; utilizing a dimensionally stable electrode; utilizing an electrode configured as a hollow basket having particles of the metal contained therein; and utilizing a filter shielded electrode.
- the present invention may be implemented in a variety of continuous processes, and in specific instances may be utilized to fabricate back reflector structures for high efficiency photovoltaic devices.
- the present invention also includes substrates having metal and oxygen materials deposited thereupon in accord with the foregoing.
- the substrates of the present invention may be used as back reflector structures for photovoltaic devices.
- the present invention is directed to substrates which include a layer of a highly reflective metal such as aluminum or silver disposed thereupon and having a highly adherent metal and oxygen layer, such as a zinc and oxygen layer, electro deposited thereupon wherein these substrates are characterized in that they do not include any vacuum deposited seed layer of a metal and oxygen material thereupon so that all of the metal and oxygen material deposited upon the reflective metal or alloy is deposited from a solution in an electro deposition process in accord with the present invention.
- Figure 1 is a cross-sectional view of a photovoltaic device showing a back reflector structure which includes a zinc oxide material deposited in accord with the present invention
- Figure 2 is a cross-sectional view of a schematic electroplating apparatus which may be utilized to carry out the method of the present invention
- Figure 3 is a flowchart depicting one embodiment of the present invention
- Figure 4 is a schematic depiction of an apparatus for implementing the method of the present invention in a continuous process
- Figure 4 better illustrating the masking system
- Figure 6 is a depiction of a deposition station generally similar to that of Figure 5 but including a biasing platen.
- FIG. 1 there is shown a cross-sectional view of a generalized high efficiency photovoltaic device 10.
- the device incorporates a substrate 12 which functions to support the remainder of the device and operates to provide a bottom, current collecting, electrode for the device.
- the substrate 12 is comprised of two separate layers.
- the first layer 14 is a body of stainless steel.
- a relatively thin layer of a highly reflective metal 16 such as aluminum, silver, or their alloys.
- This layer 16 defines what will later be referred to as the "deposition surface" of the substrate.
- a relatively thin layer of another material such as a layer of titanium or molybdenum (not shown), may be interposed between the first layer 14, and the reflective metal 16.
- the substrate may be comprised of a body of electrically insulating material such as a polymer, glass, ceramic or the like, provided that one or more layers of electrically conductive material is disposed thereupon.
- a layer of transparent, electrically conductive metal oxide material in an exemplary embodiment a zinc oxide material, 18.
- this layer is primarily comprised of ZnO, but may further include other zinc based species as well as dopants and the like.
- the material comprising the zinc oxide layer 18 is at least partially crystalline and as such the surface of this layer may have a texture corresponding to the crystalline features of the material. In general, it is preferable that the crystalline features have a size range of approximately 200-1000 nanometers so as to maximize the scattering of visible light therefrom.
- the layer 18 has good electrical conductivity and good optical transparency.
- a body of photovoltaic semiconductor material 20 Disposed atop the zinc oxide layer 18 is a body of photovoltaic semiconductor material 20.
- this body 20 operates to absorb incident photons and create carrier pairs which are collected by the electrodes of the device.
- this body 20 may be comprised of a number of layers of semiconductor materials disposed in various configurations.
- the semiconductor body 20 is comprised of hydrogenated silicon alloy materials, and as such may comprise one or more stacked triads, each triad comprised of a layer of substantially intrinsic semiconductor material interposed between p-doped and n-doped semiconductor layers.
- top electrode layer 22 Disposed atop the photovoltaic body 20 is a top electrode layer 22, which in the instance of this particular configuration of device is fabricated from an optically transparent, electrically conductive material such as ZnO or another TCO material. As is known in the art, current collecting structures such as bus bars, grids and the like may be disposed upon the top electrode 22.
- photons pass into the device through the top electrode layer 22 and are absorbed by the photovoltaic body 20 wherein they generate electron-hole pairs.
- the inherent, built-in electric field of the photovoltaic body 20 separates the photogenerated holes and electrons of these carrier pairs and they are collected by the respective top electrode 22 and substrate 12.
- Photons which are not absorbed by the photovoltaic body 20 pass through the zinc oxide layer 18 and are reflected by the reflective layer 16.
- the textured nature of the zinc oxide layer 18 scatters the reflected photons so that their angulated path back through the photovoltaic body 20 is increased as compared to non-scattered photons.
- the reflective layer 16 will also include a textured configuration to also aid in scattering the reflected photons.
- the system 30 includes a tank 32 which is configured and operable to retain a volume of electrolyte material 34 therein.
- the apparatus further includes an electrode station having a deposition electrode 36 supported therein.
- the electrode 36 is configured as a plate, comprised primarily of a metallic material such as zinc metal. It is to be understood that the apparatus of Figure 2 is generalized, and in some instances the electrode may be configured as a mesh and/or as a nonplanar body.
- the electrode is a hollow, basket-like, perforated body comprised of a material which is inert to the deposition process, such as Ti, Pt, Pd, Au, or the like. Zinc particles in the form of shot or the like are disposed in the hollow body.
- a filter is positioned about the electrode to shield the electrode and prevent particulate matter from reaching the surface of the substrate upon which the deposition is taking place.
- the filter is in the form of a porous, polyethylene filter bag, disposed so as to surround the electrode.
- the electrode is an inert, dimensionally stable electrode fabricated from an inert material such as titanium.
- inert electrode systems of this type may include a remote station in which the metal content of the electrolyte is electrochemically replenished from a body of metal retained therein.
- the remote station may be in fluid communication with the remainder of the system, or it may be separate from it.
- the electrode station may also include fixturing members such as clamps, brackets and the like for supporting the electrode body.
- the electrode station may include a plurality of discrete electrodes.
- the system of Figure 2 supports a substrate 38 in the body of electrolyte material 34.
- the substrate 38 may comprise a single layered structure or a multilayered structure.
- the electrode 36 and the substrate 38 are both in electrical communication with a power supply station which includes power supply 40 which in turn is controlled by a controller 42.
- the power supply 40 is a DC power supply
- the electrode 36 is in communication with the positive terminal of the power supply 40 and the substrate is in electrical communication with the negative terminal of the power supply 40.
- the illustrated embodiment of Figure 2 includes a single power supply 40; however, it is to be understood that in other embodiments, the power supply station may include a number of power supplies operative to energize a plurality of discrete electrodes and/or to provide different levels of power.
- the system 30 includes a heater 44 disposed in the tank 32.
- the heater 44 is operative to maintain the electrolyte 34 at a preselected temperature, and in that regard, the heater 44 has a controller 46 associated therewith.
- the heater 44 is an electrical resistance heater, although other types of heater as is known in the art may be likewise utilized.
- the system 30 also preferably includes a gas bubbler 48 disposed in the tank.
- the bubbler 48 has a gas supply 50 associated therewith and is operable, when activated, to bubble a gas, such as air or nitrogen, through the electrolyte 34, so as to keep the electrolyte stirred.
- a gas such as air or nitrogen
- the air bubbling supplies air or oxygen for the electroplating reaction.
- dissolved oxygen keeps constant oxygen content in the bath during electro deposition.
- the system further includes an ultrasonic transducer 52 disposed in the tank.
- the transducer is energized by a controller 54 and is operative, when energized, to introduce ultrasonic energy into the electrolyte material 34. While not wishing to be bound by speculation, the inventors hereof presume that the ultrasonic energy may act to maintain the cleanliness of the surface of the deposition substrate and/or the cleanliness of the depositing layer by removing unwanted species therefrom.
- the systems of the present invention may further include a monitoring station for measuring the composition of the electrolyte during the deposition process, so as to determine the concentration of metal ions, dopants and other species.
- a monitoring station for measuring the composition of the electrolyte during the deposition process, so as to determine the concentration of metal ions, dopants and other species.
- Such monitoring is preferably done in situ and in real time, and assures the uniformity and consistency of the deposited materials.
- Monitoring may be by techniques including potentiometric techniques, chemical techniques such as EDTA titration, spectroscopic techniques and the like. Monitoring can be utilized in combination with reagent supply systems operating in a feedback mode. Thus, for example, if the metal concentration of the electrolyte is too low, additional metal can be added. Or, if the pH is too high, acid can be automatically added.
- the system can control and adjust dopant reagent levels based upon measured levels in the electrolyte and/or the deposited layer.
- the substrate material 38 is shown as having a body of masking material 56 affixed to one surface thereof.
- the masking material operates to shield portions of the substrate so that in the process, zinc oxide material is unable to be deposited onto those shielded portions of the substrate.
- This feature is optional in the practice of the present invention; however, in a number of processes and device configurations it has been found beneficial to so restrict the deposit of the zinc oxide material.
- the masking material may be variously configured and adhered to the substrate and as such may comprise a polymeric resist coating.
- the masking material 56 comprises a sheet of material which is magnetically affixable to at least a portion of one surface of the substrate.
- the masking material 56 may comprise a sheet of magnetized metal, or it may comprise a body of polymeric material having magnetized particles dispersed therein.
- the masking material is electrically insulating, so as to preclude deposition thereonto.
- the electrolyte material 34 comprises an approximately 0.03 molar solution of Zn(NOs) 2 .
- the electrolyte will also include relatively small amounts of adhesion promoting material such as ethylenediaminetetraacetic acid (EDTA).
- adhesion promoting material such as ethylenediaminetetraacetic acid (EDTA).
- EDTA ethylenediaminetetraacetic acid
- Other chelating materials and/or adhesion promoters such as fumaric acid, malic acid, various other compounds having multiple functional groups (multidentate materials), as well as compounds such as sucrose may likewise be included.
- concentration of these materials is in the range of 1-200 ppm.
- the electrolyte material may also include one or more dopant or modifying species which operate to enhance the electrical conductivity of the deposited zinc oxide material.
- One specific doping species utilized in the present invention comprises boron, and it may be present in the electrolyte in the form of boric acid at a concentration in the range of 0.01%- 1.0% by weight.
- the electrolyte is generally maintained at a temperature in the range of 50-100 0 C during the deposition process, and in a typical instance, the electrolyte is maintained at a temperature of approximately 8O 0 C.
- the electrolyte will include one or more tin salts such as tin chloride, tin acetate, tin sulfate, and the like.
- tin salts such as tin chloride, tin acetate, tin sulfate, and the like.
- the deposition of indium based materials will employ an electrolyte which includes indium salts such as indium chloride, indium nitrate, indium sulfate and the like.
- the power supply is activated so as to establish an electrical potential of approximately 0.5 to 20 volts between the electrode 36 and the substrate 38. This potential will cause the deposition of zinc oxide material onto the substrate, and the rate of deposition will be proportional to the power density at the substrate. Therefore, the control of deposition power will allow for the control of the deposition rate. In a typical deposition, power density at the substrate will be in the range of 0.5-20 mA/cm .
- the electrolyte bath 34 is at least periodically stirred, and this may be done by use of a recirculation pump (not shown) and/or by bubbling a gas through the electrolyte from the bubbler 48.
- the quality of the deposited zinc oxide material is improved if ultrasonic energy is at least periodically introduced into the electrolyte bath.
- the ultrasonic transducer 52 is energized at a power level of approximately 500 watts, for example.
- the configuration of the ultrasonic energy system employed will depend on the configuration of the electrical device and other aspects of the electro deposition system.
- the power supply 40 in a pulsed mode wherein the DC current applied to the electrode 36 and substrate 38 is periodically interrupted.
- the current is pulsed at a rate of 1 to 10 Hz.
- Applicant presumes that operation in the pulsed mode allows for equilibration of deposition conditions at the surface of the substrate and thereby promotes the deposition of materials having optimum compositions and morphology.
- the inventors hereof have found that very high quality deposits of zinc oxide material may be prepared in a multi-deposition rate process.
- the substrate is initially coated with a first layer of zinc oxide material in a relatively high rate deposition process.
- High rate deposition may be achieved by controlling the power supply so as to energize the electrode 36 and substrate 38 with a relatively high level of power. This produces a relatively fast deposition of a relatively thick portion of the body of zinc oxide material.
- the power supply energizes the electrode 36 and substrate 38 at a lower level of power so as to deposit zinc oxide material upon the previously deposited layer, at a lower rate. It is believed that this lower rate material manifests a very good crystalline structure and surface texture which optimizes the performance of the zinc oxide layer.
- the substrate 38 may be oriented vertically as is shown in Figure 2.
- other orientations which will inhibit particle accumulations may be employed.
- the substrate may be disposed in a horizontal orientation with the deposition surface facing downward.
- the substrate may be disposed in an angled relationship with a vertical axis, provided that the deposition surface is downwardly inclined so as to inhibit particulate accumulation.
- all of such orientations of the substrate, wherein gravity acts (at least in part) to inhibit particle accumulation on the deposition surface are referred to as "partiphobic".
- the zinc oxygen materials produced by the present invention have very good physical, optical and electronic properties which make them ideally suited for use in back reflector structures of photovoltaic devices. It is believed that this combination of properties is resultant from the independent and/or synergistic effect of at least two and perhaps more of the aforedescribed features of the present invention, namely the use of pulsed power, deposition of the material in an at least dual-layered structure at differing power levels, ultrasonic cleaning of the depositing layer during the deposition process, and use of a partiphobic substrate orientation which precludes particulate inclusions.
- Typical layer thicknesses in back reflector structures are on the order of 0.1 to 3 microns, and the high speed nature of the deposition process of the present invention greatly enhances the economics and physical implementation of the fabrication process as compared to methods wherein the layer is entirely deposited by vacuum processes.
- the present invention provides for the high speed electrochemical deposition of zinc oxide materials
- the invention may be implemented in connection with an overall fabrication process wherein some portions of the zinc oxide material may be deposited in a vacuum process such as sputtering.
- a vacuum process such as sputtering.
- commonly employed substrates for photovoltaic devices comprise stainless steel having a reflective coating of silver, silver alloys, or aluminum deposited thereupon. The reflective layer is fairly thin and is often deposited by sputtering or some other vacuum process.
- the inventors herein have been able to electro deposit a high quality TCO material having very good adhesion properties and device operational parameters atop various reflective substrates without employing any vacuum deposited seed layer, thereby reducing manufacturing costs considerably. Elimination of the seed layer is particularly important in those instances where the reflective layer is also deposited by electroplating, since this allows for a total atmospheric pressure process. It has been found that the inclusion of adhesion promoters such as EDTA in the electrolyte enhances the adhesion of the electro deposited layer to the reflective metal, and thereby eliminates the need for a vacuum deposited seed layer.
- adhesion promoters such as EDTA
- the adhesion of the layer of metal and oxygen material to the subjacent substrate, with or without a reflective metal or metal alloy material thereupon may also be enhanced by pretreating the deposition surface of the substrate material with an activating agent which is a multidentate material of the type described above.
- the multidentate material includes a number of separate active sites; and while not wishing to be bound by speculation, the inventors hereof presume that the multidentate activating agent binds to the deposition surface of the substrate material through one of its active sites while its remaining one or more active sites serve to promote the adhesion of the subsequently deposited metal and oxygen material.
- Multidentate activating agents which may be employed in the present invention can include, by way of example and not limitation, inorganic acids which have more than one active site. Such acids include, but are not limited to, phosphoric acid and boric acid. Likewise, polyfunctional organic acids such as polycarboxylic acid may be employed in this manner. These acids include malic acid, fumaric acid, and lactic acid, as well as aromatic acids such as phthalic acid. All of the foregoing acids may be also employed in the form of compounds such as esters, salts, acid anhydrides, and other such materials. In yet other instances, the multidentate activating agent may be a chelating agent such as ethylenediaminetetraacetic acid or the like. Other multidentate activating agents will be apparent to those of skill in the art.
- the multidentate activating agent is employed in the form of a solution, and in particular instances the solution is an aqueous solution.
- concentration of the activating agent in the solution will depend upon the nature of the activating agent itself, the surface being activated, and the material being deposited onto the activated surface. However, in most instances the concentration of the activating agent is in the range of 1-1000 parts per million on a weight basis. In specific instances, the concentration is in the range of 1-100 parts per million, although other concentration ranges will be readily apparent to those of skill in the art.
- the deposition surface of the substrate is contacted with the activating agent, and this may be accomplished by spraying a solution of the agent onto the deposition surface or by dipping the substrate into a solution of the activating agent.
- the solution will typically be maintained at a temperature ranging from room temperature to approximately 100 0 C, particularly 5° to 5O 0 C and most particularly at around room temperature.
- the solution may be stirred or agitated. Ultrasonic energy may also be input to facilitate the activation process.
- the activating agent may be used in a vapor form rather than in a solution.
- the activating agent may comprise a relatively low boiling polycarboxylic acid such as lactic acid, and activation may be accomplished by heating the activating agent in a chamber so as to produce vapor and passing the substrate through that chamber.
- the activation process may be readily integrated into various deposition systems.
- the activated substrate may be conveyed, directly, to a deposition station in which a layer of the metal and oxygen material is electroplated thereonto. In other instances, the substrate may be rinsed prior to electroplating.
- an activating station may be incorporated into the system.
- the activating station may comprise a tank through which the substrate passes prior to electroplating. Likewise, it may comprise a spray chamber through which the substrate passes.
- a coiled roll of Ag coated stainless steel web is loaded into a pay-off station.
- the web is first introduced from the pay-off station into a surface activation station where a solution of potassium hydrogen phthalate (a salt of phthalic acid) is sprayed onto the web to a surface activation layer on its top surface. It is found that about 21 mg of phthalate in 1 liter of water gives good adhesion and solar cell performance.
- the web speed used is about 30 centimeters per minute.
- the solution temperature was kept at room temperature.
- the web was then moved into the electro deposition station where ZnO was deposited onto the activated surface.
- the web was then cleaned in the rinse water cleaning station before it was dried and rolled up in the take-up station. Similar activation processes may be implemented using other activating agents. Also, the process may be implemented for discrete sheets of substrate material.
- the substrate is an approximately 5 mils thick layer of stainless steel.
- an approximately 100 nanometer thick adhesion layer of titanium is vacuum deposited upon the stainless steel.
- a reflective layer of silver or aluminum having a thickness in the range of 100-500 nanometers and preferably 100-250 nanometers is deposited upon the substrate.
- the reflective layer is activated by contacting it with the multidentate activating agent as described above.
- the thus activated substrate (or reflective layer atop the substrate) is coated with a layer of zinc oxide material in the process of the present invention.
- the thickness of this multidentate layer is generally in the range of 0.1-3 nanometer and preferably in the range of about one molecular layer depending upon specific applications.
- FIG. 3 there is shown a generalized flowchart depicting one embodiment of the present invention using a multi-rate electro deposition process; however, it is to be understood that the activation process of the present invention may be used with other types of electro deposition processes.
- the process employs a substrate which, as mentioned above, undergoes an activation process.
- the zinc oxide material is deposited onto the activated substrate at a relatively high deposition rate, which in some instances is approximately 10 nm/sec.
- This initial deposition is carried out at a temperature in the range of 50-100 0 C, and typically at a temperature of 8O 0 C.
- the electrolyte in the deposition tank is agitated by activating the gas bubbler system; however, agitation may optionally be carried out by pumps, stirrers, or the like.
- ultrasonic energy is input to the deposition tank. Deposition conditions are maintained at a high rate, and agitation of the bath is also continued. The ultrasonic energy serves to remove undesirable solution particulates from the depositing layer. Any pitting left by the removal of the loosely adherent materials is filled in by the depositing zinc oxide material. In this second stage of the process, the remainder of the thickness of the final zinc oxide layer is deposited.
- a further portion of the layer of zinc oxide material is deposited at a relatively low deposition rate.
- this rate is in the range of approximately 1-5 nm/sec.
- the deposition bath is maintained at approximately the same temperature it was in the first two stages, and agitation of the electrolyte is maintained through the use of the bubbler or other means.
Abstract
Description
Claims
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JP2011550226A JP2012517532A (en) | 2009-02-11 | 2010-02-11 | Solution-based non-vacuum method and apparatus for preparing oxide materials |
EP10741718A EP2396811A2 (en) | 2009-02-11 | 2010-02-11 | Solution based non-vacuum method and apparatus for preparing oxide materials |
CN2010800163297A CN102388437A (en) | 2009-02-11 | 2010-02-11 | Solution based non-vacuum method and apparatus for preparing oxide materials |
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US12/369,045 US20100200408A1 (en) | 2009-02-11 | 2009-02-11 | Method and apparatus for the solution deposition of high quality oxide material |
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US6592739B1 (en) * | 1999-11-29 | 2003-07-15 | Canon Kabushiki Kaisha | Process and apparatus for forming zinc oxide film, and process and apparatus for producing photovoltaic device |
EP2087151A4 (en) * | 2006-10-19 | 2012-03-28 | Solopower Inc | Roll-to-roll electroplating for photovoltaic film manufacturing |
CN101348931A (en) * | 2008-09-11 | 2009-01-21 | 北京科技大学 | Method for preparing uniform transparent zinc oxide nanorod array film by pulse electrodeposition |
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2009
- 2009-02-11 US US12/369,045 patent/US20100200408A1/en not_active Abandoned
-
2010
- 2010-02-11 WO PCT/US2010/023878 patent/WO2010093781A2/en active Application Filing
- 2010-02-11 KR KR1020117021290A patent/KR20110127201A/en not_active Application Discontinuation
- 2010-02-11 CN CN2010800163297A patent/CN102388437A/en active Pending
- 2010-02-11 JP JP2011550226A patent/JP2012517532A/en not_active Withdrawn
- 2010-02-11 EP EP10741718A patent/EP2396811A2/en not_active Withdrawn
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US6068755A (en) * | 1996-12-06 | 2000-05-30 | Canon Kabushiki Kaisha | Process for forming zinc oxide film and processes for producing semiconductor device plate and photo-electricity generating device using the film |
US6544877B1 (en) * | 1998-11-24 | 2003-04-08 | Canon Kabushiki Kaisha | Method of producing thin film of zinc oxide, process for manufacturing photovoltaic element using its method, and photovoltaic element |
JP2005206937A (en) * | 2003-12-26 | 2005-08-04 | Toyo Seikan Kaisha Ltd | Method and apparatus for forming oxide coating |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013216920A (en) * | 2012-04-04 | 2013-10-24 | Okuno Chemical Industries Co Ltd | Discoloration prevention method of silver-based material |
JP2013241669A (en) * | 2012-04-26 | 2013-12-05 | Murata:Kk | Electrolytic solution for forming protection film, protection film, and method for forming the protection film |
Also Published As
Publication number | Publication date |
---|---|
WO2010093781A3 (en) | 2010-11-18 |
JP2012517532A (en) | 2012-08-02 |
EP2396811A2 (en) | 2011-12-21 |
KR20110127201A (en) | 2011-11-24 |
US20100200408A1 (en) | 2010-08-12 |
CN102388437A (en) | 2012-03-21 |
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