CN101348931A - A method for preparing uniform transparent zinc oxide nanorod array film by pulse electrodeposition - Google Patents
A method for preparing uniform transparent zinc oxide nanorod array film by pulse electrodeposition Download PDFInfo
- Publication number
- CN101348931A CN101348931A CNA2008101198103A CN200810119810A CN101348931A CN 101348931 A CN101348931 A CN 101348931A CN A2008101198103 A CNA2008101198103 A CN A2008101198103A CN 200810119810 A CN200810119810 A CN 200810119810A CN 101348931 A CN101348931 A CN 101348931A
- Authority
- CN
- China
- Prior art keywords
- zinc oxide
- solution
- nanorod array
- electrode
- pulse electrodeposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 92
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 46
- 238000004070 electrodeposition Methods 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000002073 nanorod Substances 0.000 title claims abstract description 16
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims abstract description 14
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 claims abstract description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 12
- 239000001301 oxygen Substances 0.000 claims abstract description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000011521 glass Substances 0.000 claims abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 235000005074 zinc chloride Nutrition 0.000 claims abstract description 7
- 239000011592 zinc chloride Substances 0.000 claims abstract description 7
- ZOMNIUBKTOKEHS-UHFFFAOYSA-L dimercury dichloride Chemical class Cl[Hg][Hg]Cl ZOMNIUBKTOKEHS-UHFFFAOYSA-L 0.000 claims abstract description 6
- 239000012153 distilled water Substances 0.000 claims abstract description 6
- 239000002105 nanoparticle Substances 0.000 claims abstract description 6
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 6
- 238000003756 stirring Methods 0.000 claims abstract description 6
- 235000011164 potassium chloride Nutrition 0.000 claims abstract 3
- 239000001103 potassium chloride Substances 0.000 claims abstract 3
- 239000008367 deionised water Substances 0.000 claims description 5
- 238000005137 deposition process Methods 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 229910021641 deionized water Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 21
- 238000002360 preparation method Methods 0.000 abstract description 7
- 238000005265 energy consumption Methods 0.000 abstract description 2
- 239000002086 nanomaterial Substances 0.000 abstract description 2
- 230000005693 optoelectronics Effects 0.000 abstract description 2
- 239000002243 precursor Substances 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract description 2
- 238000006555 catalytic reaction Methods 0.000 abstract 1
- 238000011031 large-scale manufacturing process Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 17
- 239000007788 liquid Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000002070 nanowire Substances 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- FMRLDPWIRHBCCC-UHFFFAOYSA-L Zinc carbonate Chemical compound [Zn+2].[O-]C([O-])=O FMRLDPWIRHBCCC-UHFFFAOYSA-L 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- QVGXLLKOCUKJST-BJUDXGSMSA-N oxygen-15 atom Chemical compound [15O] QVGXLLKOCUKJST-BJUDXGSMSA-N 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 235000004416 zinc carbonate Nutrition 0.000 description 1
- 239000011667 zinc carbonate Substances 0.000 description 1
- 229910000010 zinc carbonate Inorganic materials 0.000 description 1
Images
Landscapes
- Electroplating Methods And Accessories (AREA)
- Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
Abstract
本发明公开了一种脉冲电沉积制备均匀透明氧化锌纳米棒阵列薄膜的方法，属于纳米材料制备领域，依次包括如下步骤：将分析纯的氯化锌和氯化钾溶解于蒸馏水中搅拌，得到稳定透明的溶液后置于60～80℃的水浴中恒温，向此溶液中持续通入氧气；在三电极体系中，采用涂覆ZnO纳米粒子膜的ITO导电玻璃为阴极，铂片为对电极，饱和甘汞电极为参比电极，在－0.8～－1.1V的外加电压下，控制通断时间比为ton/toff＝10s/10s～1s/1s，进行脉冲电沉积ZnO纳米棒阵列薄膜。本发明通过调整前驱体的初始浓度以及脉冲电沉积的外加电压、电压的通断时间比、脉冲频率等控制因素，制备出直径小于50nm、长度均匀可控的透明氧化锌纳米棒阵列薄膜，有效地提高了氧化锌纳米棒阵列薄膜的质量。本发明工艺简单，可控性强，减少了能耗，能够满足大规模生产的需要，在太阳能电池、光电子、催化等领域有着广泛的应用前景。
The invention discloses a method for preparing a uniform transparent zinc oxide nanorod array film by pulse electrodeposition, which belongs to the field of nano-material preparation, and comprises the following steps in turn: dissolving analytically pure zinc chloride and potassium chloride in distilled water and stirring to obtain After the stable and transparent solution is placed in a water bath at 60-80°C to maintain a constant temperature, oxygen is continuously introduced into the solution; in the three-electrode system, the ITO conductive glass coated with ZnO nanoparticle film is used as the cathode, and the platinum sheet is used as the counter electrode , the saturated calomel electrode is used as the reference electrode, under the applied voltage of -0.8--1.1V, the on-off time ratio is controlled to be ton/toff=10s/10s-1s/1s, and the ZnO nanorod array thin film is pulse electrodeposited. The present invention prepares a transparent zinc oxide nanorod array film with a diameter of less than 50 nm and a uniform and controllable length by adjusting the initial concentration of the precursor, the applied voltage of the pulse electrodeposition, the on-off time ratio of the voltage, and the pulse frequency, etc. Improved the quality of ZnO nanorod array films. The invention has simple process, strong controllability, reduced energy consumption, can meet the needs of large-scale production, and has wide application prospects in the fields of solar cells, optoelectronics, catalysis and the like.
Description
Technical field
The invention belongs to field of nano material preparation, particularly aqueous solution electrodeposition prepares the zinc carbonate nano film material of diameter less than 50 nanometers, length homogeneous and controllable.
Background technology
ZnO is a kind of novel I I-VI family wide bandgap compound semiconductor material of hexagonal structure, and energy gap is 3.37eV under the room temperature, and exciton binding energy has possessed the supremacy clause of emission blue light or near-ultraviolet light up to 60meV.(Vapor-Liquid-Solid VLS) has prepared height-oriented ZnO nano-wire array and observe photic Ultra-Violet Laser emission phenomenon under the room temperature to calendar year 2001 Yang etc. with the VLS method; Konenkamp in 2005 etc. make further research the photoelectric properties of ZnO nanometer stick array, ZnO nano wire/excellent array that this achievement makes people recognize high-sequential has important significance for theories and application prospect at aspects such as development nanoelectronic of new generation, opto-electronic devices, so the preparation of the ZnO nano wire/excellent array of high-sequential and property research are becoming the new research focus of chemistry, physics and Materials science.In recent years, people attempt preparing with different physics and chemical process the ZnO nanometer stick array of excellent performance, wherein electrochemical deposition method since its reaction conditions gentleness, experiment parameter be easy to control, be easy to advantage such as mass industrialized production and more and more cause people's attention.In recent years, more international research groups adopt constant potential electrodip processes or continuous current electrodip process (for example: 1. Pauporte, T. to prepare the ZnO nanometer stick array; Lincot, D.Appl.Phys.Lett.1999,75,3817. 2. Illy, B.; Shollock, B.A.; MacManus-Driscoll J.L.; Ryan, M.P.Nanotechnology 2005,16,320. 3. Cao, B-Q.; Cai, W-P.; Zeng, H-B.; Duan, G-T.J.Appl.Phys.2006,99,073516.).
The subject matter that adopts electrodip process large-area preparation nanometic zinc oxide rod array to exist at present is: the nanometer rod diameter is bigger, reaches the hundreds of nanometer and does not wait, and the diameter of rod fails to be effectively controlled; In addition, the speed of growth difference of nanometer rod causes the length height of rod not wait resulting uneven film thickness one; Secondly, in deposition process, easily introduce impurity, cause product impure.Above-mentioned shortcoming has restricted electrodip process in ZnO nano-device Development Application.
Summary of the invention
The present invention proposes to adopt the method for square-wave pulse galvanic deposit,-0.8～-impressed voltage of 1.1V under, controlling factors such as the make-and-break time ratio of the starting point concentration by adjusting presoma and the impressed voltage of pulse electrodeposition, voltage, pulse-repetition, prepare the transparent film of diameter less than the nanometic zinc oxide rod array of 50nm, length homogeneous and controllable, improved the quality of nanometic zinc oxide rod array film effectively, not only can enhance productivity, energy efficient, and be easy to operate and control.
The method that the present invention's pulse electrodeposition in the aqueous solution prepares uniform transparent zinc oxide nanorod array film in turn includes the following steps:
(1) analytically pure zinc chloride and Repone K are used dissolved in distilled water in electrolyzer, stir the solution that obtains stable transparent, the concentration of described liquor zinci chloridi is 0.0005～0.001mol/L, and the concentration of Klorvess Liquid is 0.1～0.8mol/L;
(2) above-mentioned solution is placed water-bath constant temperature, bath temperature is 60～80 ℃;
(3) in above-mentioned solution, continue aerating oxygen;
(4) adopt three-electrode system to carry out the square-wave pulse galvanic deposit, ITO conductive glass with coating ZnO film of nanoparticles is a working electrode, platinized platinum is a counter electrode, saturated calomel electrode is a reference electrode, carry out square-wave pulse galvanic deposit ZnO, add square-wave voltage and be-0.8～-1.1V, the make-and-break time ratio of voltage is t
On/ t
Off=10s/10s～1s/1s;
(5) conductive glass is taken out, after washed with de-ionized water,, make uniform transparent zinc oxide nanorod array film in 60～80 ℃ of drying 30～60min of loft drier.
2, the method for preparing uniform transparent zinc oxide nanorod array film according to claim 1, it is characterized in that, described oxygen should feed in solution 10～15 minutes before pulse electrodeposition in advance, in the process of carrying out pulse electrodeposition, and aerating oxygen in solution always.
The present invention is by the impressed voltage of reasonable setting pulse galvanic deposit, the make-and-break time ratio of voltage, size, precursor liquid concentration, reaction times and the temperature of square-wave pulse frequency, controlled the size of nanometer rod diameter effectively, and the speed of growth of rod, finally obtained the transparent film of diameter less than the nanometic zinc oxide rod array of 50nm, length homogeneous and controllable, the homogeneity and the transparency of nanometic zinc oxide rod array have been guaranteed, improve production efficiency greatly, saved energy consumption; This method easy handling can be used for scale operation.
Description of drawings
Fig. 1 adopts the nanometic zinc oxide rod array SEM photo of square-wave pulse electro-deposition method preparation.
Fig. 2 adopts the nanometic zinc oxide rod array XRD figure of square-wave pulse electro-deposition method preparation.
Fig. 3 adopts the nanometic zinc oxide rod array transmitted light spectrogram of square-wave pulse electro-deposition method preparation.
Embodiment
Below in conjunction with example the present invention is set forth, but therefore do not limit the present invention within the example ranges.
With scanning electronic microscope (SEM), X-ray diffraction (XRD) and transmitted spectrum characterize structure, pattern and the transparency of the ZnO nanometer stick array prepared.
Embodiment 1:
(1) analytically pure zinc chloride and Repone K are used dissolved in distilled water in electrolyzer, stir the solution that obtains stable transparent, the concentration of liquor zinci chloridi is 0.0005mol/L, and the concentration of Klorvess Liquid is 0.1mol/L;
(2) get above-mentioned solution place 60 ℃ of constant temperature of water-bath to the reaction finish till;
(3) aerating oxygen 10 minutes in above-mentioned solution in advance before pulse electrodeposition, in the process of carrying out pulse electrodeposition, aerating oxygen in solution always;
(4) adopt three-electrode system to carry out the square-wave pulse galvanic deposit, ITO conductive glass with coating ZnO film of nanoparticles is working electrode (being negative electrode), and platinized platinum is counter electrode (being anode), and saturated calomel electrode is a reference electrode, under the impressed voltage of-0.8V, t is compared in control conduction time
On/ t
Off=10s/10s carries out pulse electrodeposition ZnO nanometer stick array;
(5) the ITO conductive glass is taken out, after washed with de-ionized water,, make uniform transparent zinc oxide nanorod array film in 60 ℃ of dry 60min of loft drier.
Embodiment 2:
(1) analytically pure zinc chloride and Repone K are used dissolved in distilled water in electrolyzer, stir the solution that obtains stable transparent, the concentration of liquor zinci chloridi is 0.0006mol/L, and the concentration of Klorvess Liquid is 0.4mol/L;
(2) get above-mentioned solution place 70 ℃ of constant temperature of water-bath to the reaction finish till;
(3) aerating oxygen 14 minutes in above-mentioned solution in advance before pulse electrodeposition, in the process of carrying out pulse electrodeposition, aerating oxygen in solution always;
(4) adopt three-electrode system to carry out the square-wave pulse galvanic deposit, ITO conductive glass with coating ZnO film of nanoparticles is working electrode (being negative electrode), and platinized platinum is counter electrode (being anode), and saturated calomel electrode is a reference electrode, under the impressed voltage of-1.0V, t is compared in control conduction time
On/ t
Off=5s/5s carries out pulse electrodeposition ZnO nanometer stick array;
(5) the ITO conductive glass is taken out, after washed with de-ionized water,, make uniform transparent zinc oxide nanorod array film in 70 ℃ of dry 40min of loft drier.
Embodiment 3:
(1) analytically pure zinc chloride and Repone K are used dissolved in distilled water in electrolyzer, stir the solution that obtains stable transparent, the concentration of liquor zinci chloridi is 0.0008mol/L, and the concentration of Klorvess Liquid is 0.8mol/L;
(2) get above-mentioned solution place 70 ℃ of constant temperature of water-bath to the reaction finish till;
(3) aerating oxygen 15 minutes in above-mentioned solution in advance before pulse electrodeposition, in the process of carrying out pulse electrodeposition, aerating oxygen in solution always;
(4) adopt three-electrode system to carry out the square-wave pulse galvanic deposit, ITO conductive glass with coating ZnO film of nanoparticles is working electrode (being negative electrode), and platinized platinum is counter electrode (being anode), and saturated calomel electrode is a reference electrode, under the impressed voltage of-1.1V, t is compared in control conduction time
On/ t
Off=1s/1s carries out pulse electrodeposition ZnO nanometer stick array;
(5) the ITO conductive glass is taken out, after washed with de-ionized water,, make uniform transparent zinc oxide nanorod array film in 80 ℃ of dry 30min of loft drier.
Concrete experimental result
Adopt the square-wave pulse electrodip process, under above-mentioned test conditions, prepare ZnO nanometer stick array transparent film in all can be on a large scale, wherein, the rod mean diameter all less than 50nm, the height unanimity of nanometer rod, perpendicular to substrate grown, as depicted in figs. 1 and 2.When lambda1-wavelength during greater than 400nm, the transmittance of ZnO nanometer stick array is all greater than 95%, as shown in Figure 3.
Detected result shows, adopt the method for square-wave pulse galvanic deposit, by the make-and-break time ratio of reasonable control impressed voltage, voltage, the size of square-wave pulse frequency, for constant potential and continuous current electro-deposition method, can control the size of nanometer rod diameter more effectively, especially Bang the speed of growth, finally prepare the transparent zinc oxide nanorod array film of diameter less than 50nm, length homogeneous and controllable, and do not have the existence of other impurity in the thin film composition that this method obtains, can be used for scale operation.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008101198103A CN101348931A (en) | 2008-09-11 | 2008-09-11 | A method for preparing uniform transparent zinc oxide nanorod array film by pulse electrodeposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008101198103A CN101348931A (en) | 2008-09-11 | 2008-09-11 | A method for preparing uniform transparent zinc oxide nanorod array film by pulse electrodeposition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101348931A true CN101348931A (en) | 2009-01-21 |
Family
ID=40267895
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2008101198103A Pending CN101348931A (en) | 2008-09-11 | 2008-09-11 | A method for preparing uniform transparent zinc oxide nanorod array film by pulse electrodeposition |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101348931A (en) |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2469869A (en) * | 2009-05-01 | 2010-11-03 | Univ Bolton | Continuous ZnO films |
| CN102388437A (en) * | 2009-02-11 | 2012-03-21 | 联合太阳能奥佛有限公司 | Solution based non-vacuum method and apparatus for preparing oxide materials |
| CN102507531A (en) * | 2011-10-28 | 2012-06-20 | 中国科学院理化技术研究所 | Raman scattering enhanced substrate of zinc oxide-based semiconductor and preparation method and application thereof |
| CN102747424A (en) * | 2012-08-06 | 2012-10-24 | 苏州汶颢芯片科技有限公司 | Method for preparing zinc oxide nano wire/pipe arrays with controllable diameters and heights on indium tin oxide (ITO) glass |
| CN103060909A (en) * | 2012-12-31 | 2013-04-24 | 苏州汶颢芯片科技有限公司 | Method for preparing ZnO nanowire/nanotube arrays with adjustable diameter and height on organic flexible substrate |
| CN103147130A (en) * | 2013-01-27 | 2013-06-12 | 浙江大学 | Preparation method of transition metal element doped zinc oxide (ZnO) nanometer array and semiconductor device with the same |
| CN103194784A (en) * | 2013-04-11 | 2013-07-10 | 江苏大学 | Method for preparing nano ZnO thin film through controlled electro-deposition by taking colloid as template |
| CN103320827A (en) * | 2013-06-13 | 2013-09-25 | 江苏大学 | Preparation method of inorganic-salt-doped nano zinc oxide film |
| CN103422129A (en) * | 2013-07-24 | 2013-12-04 | 浙江大学 | A Method for Changing the Morphology of ZnO by Adding Ca2+ |
| CN103469273A (en) * | 2013-08-29 | 2013-12-25 | 长春工程学院 | Method for preparing nano-zinc oxide |
| US9682346B1 (en) * | 2016-10-20 | 2017-06-20 | Sultan Qaboos University | Nanostructured zinc oxide membrane for separating oil from water |
| CN107460514A (en) * | 2017-06-27 | 2017-12-12 | 江苏大学 | A kind of simple method for preparing zinc oxide nano popped rice |
| CN108277462A (en) * | 2017-12-27 | 2018-07-13 | 浙江交通科技股份有限公司 | A kind of method that pulse electrodeposition prepares magnetic metal nanotube |
| CN108588778A (en) * | 2018-06-05 | 2018-09-28 | 北方民族大学 | A method of Low-temperature electro-deposition prepares orderly ZnO nanorod in flexible plastic substrates |
| CN113526541A (en) * | 2021-08-24 | 2021-10-22 | 郑州大学 | A method for electrochemical reduction-assisted preparation of ultrathin zinc oxide nanosheets |
| CN115501754A (en) * | 2022-08-19 | 2022-12-23 | 西安建筑科技大学 | A method and device for regulating and improving the desalination performance of nanochannel membranes by external electric field |
| CN116479498A (en) * | 2023-04-04 | 2023-07-25 | 扬州新达再生资源科技有限公司 | Low-energy-consumption clean processing technology for preparing active zinc oxide from zinc ash |
-
2008
- 2008-09-11 CN CNA2008101198103A patent/CN101348931A/en active Pending
Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102388437A (en) * | 2009-02-11 | 2012-03-21 | 联合太阳能奥佛有限公司 | Solution based non-vacuum method and apparatus for preparing oxide materials |
| GB2469869A (en) * | 2009-05-01 | 2010-11-03 | Univ Bolton | Continuous ZnO films |
| CN102507531A (en) * | 2011-10-28 | 2012-06-20 | 中国科学院理化技术研究所 | Raman scattering enhanced substrate of zinc oxide-based semiconductor and preparation method and application thereof |
| CN102747424A (en) * | 2012-08-06 | 2012-10-24 | 苏州汶颢芯片科技有限公司 | Method for preparing zinc oxide nano wire/pipe arrays with controllable diameters and heights on indium tin oxide (ITO) glass |
| CN103060909A (en) * | 2012-12-31 | 2013-04-24 | 苏州汶颢芯片科技有限公司 | Method for preparing ZnO nanowire/nanotube arrays with adjustable diameter and height on organic flexible substrate |
| CN103147130A (en) * | 2013-01-27 | 2013-06-12 | 浙江大学 | Preparation method of transition metal element doped zinc oxide (ZnO) nanometer array and semiconductor device with the same |
| CN103147130B (en) * | 2013-01-27 | 2016-05-11 | 浙江大学 | The preparation method of transition metal element doped ZnO nano array and comprise the semiconductor devices of this nano-array |
| CN103194784A (en) * | 2013-04-11 | 2013-07-10 | 江苏大学 | Method for preparing nano ZnO thin film through controlled electro-deposition by taking colloid as template |
| CN103194784B (en) * | 2013-04-11 | 2016-03-02 | 江苏大学 | A kind of method taking colloid as template controllable electric deposition and prepare nano-ZnO thin film |
| CN103320827B (en) * | 2013-06-13 | 2015-12-09 | 江苏大学 | A kind of preparation method of inorganic-salt-dopednano nano zinc oxide film |
| CN103320827A (en) * | 2013-06-13 | 2013-09-25 | 江苏大学 | Preparation method of inorganic-salt-doped nano zinc oxide film |
| CN103422129B (en) * | 2013-07-24 | 2015-09-30 | 浙江大学 | A kind of by adding Ca 2+change the method for appearance of ZnO |
| CN103422129A (en) * | 2013-07-24 | 2013-12-04 | 浙江大学 | A Method for Changing the Morphology of ZnO by Adding Ca2+ |
| CN103469273A (en) * | 2013-08-29 | 2013-12-25 | 长春工程学院 | Method for preparing nano-zinc oxide |
| US9682346B1 (en) * | 2016-10-20 | 2017-06-20 | Sultan Qaboos University | Nanostructured zinc oxide membrane for separating oil from water |
| CN107460514A (en) * | 2017-06-27 | 2017-12-12 | 江苏大学 | A kind of simple method for preparing zinc oxide nano popped rice |
| CN108277462A (en) * | 2017-12-27 | 2018-07-13 | 浙江交通科技股份有限公司 | A kind of method that pulse electrodeposition prepares magnetic metal nanotube |
| CN108588778A (en) * | 2018-06-05 | 2018-09-28 | 北方民族大学 | A method of Low-temperature electro-deposition prepares orderly ZnO nanorod in flexible plastic substrates |
| CN113526541A (en) * | 2021-08-24 | 2021-10-22 | 郑州大学 | A method for electrochemical reduction-assisted preparation of ultrathin zinc oxide nanosheets |
| CN113526541B (en) * | 2021-08-24 | 2022-08-02 | 郑州大学 | A method for electrochemical reduction-assisted preparation of ultrathin zinc oxide nanosheets |
| CN115501754A (en) * | 2022-08-19 | 2022-12-23 | 西安建筑科技大学 | A method and device for regulating and improving the desalination performance of nanochannel membranes by external electric field |
| CN116479498A (en) * | 2023-04-04 | 2023-07-25 | 扬州新达再生资源科技有限公司 | Low-energy-consumption clean processing technology for preparing active zinc oxide from zinc ash |
| CN116479498B (en) * | 2023-04-04 | 2023-10-20 | 扬州新达再生资源科技有限公司 | Low-energy-consumption clean processing technology for preparing active zinc oxide from zinc ash |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101348931A (en) | A method for preparing uniform transparent zinc oxide nanorod array film by pulse electrodeposition | |
| Xu et al. | Morphological control of ZnO nanostructures by electrodeposition | |
| Tena-Zaera et al. | Role of chloride ions on electrochemical deposition of ZnO nanowire arrays from O2 reduction | |
| CN102306550B (en) | Method for preparing nano-branched titanium dioxide photoanode of dye sensitized solar cell | |
| CN102774883B (en) | Rutile type titanium dioxide nanowire film and preparation method and applications thereof | |
| Guo et al. | Fabrication of TiO2 nano-branched arrays/Cu2S composite structure and its photoelectric performance | |
| CN102153138B (en) | Graded titanium dioxide microspheres consisting of nano rods and nano granules | |
| CN106563442A (en) | Preparation method and application of ultrathin tungsten trioxide dihydrate nanosheet | |
| CN101412533B (en) | A method for preparing uniform zinc oxide nanotube arrays in aqueous solution | |
| CN102732928A (en) | Preparation method of cuprous oxide semiconductor film material | |
| Shen et al. | Enhancing efficiency of CdS/TiO2 nanorod arrays solar cell through improving the hydrophilicity of TiO2 nanorod surface | |
| CN102231332A (en) | Flexible Dye-sensitized Solar Cells (DSSCs) based on titanium dioxide nanometer rod array film and preparation method thereof | |
| Yang et al. | Electrodeposition of flake-like Cu2O on vertically aligned two-dimensional TiO2 nanosheet array films for enhanced photoelectrochemical properties | |
| CN101429679B (en) | Nano PbS film production method | |
| CN101049957A (en) | Method for preparing Nano zinc oxide film with different appearances through solution technique | |
| CN110473927B (en) | Cuprous oxide/cuprous thiocyanate heterojunction photoelectric film and preparation method thereof | |
| Xue et al. | Electrodeposition of Cu2O nanocrystalline on TiO2 nanosheet arrays by chronopotentiometry for improvement of photoelectrochemical properties | |
| CN103320828B (en) | A kind of electrochemical preparation method of hexamethylenetetramine nanometer doped zinc oxide film | |
| CN102061498B (en) | Preparation method of injector-shaped ZnO nanostructure array for field emission | |
| CN1763261A (en) | A kind of titanium oxide nanomaterial thin film and preparation method thereof | |
| CN105236472A (en) | A kind of preparation method of SnO2 nanowire array | |
| CN102013327A (en) | Fluorinion-doped zinc oxide porous prism array film, and preparation and application thereof | |
| CN101293742A (en) | A kind of preparation method of rutile nanorod array film | |
| CN105355438B (en) | SnO2The electrochemical preparation method of nanometer rods | |
| Wan et al. | Modulation of dendrite growth of cuprous oxide by electrodeposition |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Open date: 20090121 |