WO2010092665A1 - Photovoltaic cell inspecting device - Google Patents
Photovoltaic cell inspecting device Download PDFInfo
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- WO2010092665A1 WO2010092665A1 PCT/JP2009/052225 JP2009052225W WO2010092665A1 WO 2010092665 A1 WO2010092665 A1 WO 2010092665A1 JP 2009052225 W JP2009052225 W JP 2009052225W WO 2010092665 A1 WO2010092665 A1 WO 2010092665A1
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- WIPO (PCT)
- Prior art keywords
- cell
- stress
- photovoltaic cell
- unit
- image data
- Prior art date
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- 230000007547 defect Effects 0.000 claims abstract description 7
- 238000007689 inspection Methods 0.000 claims description 37
- 238000003384 imaging method Methods 0.000 claims description 14
- 238000012545 processing Methods 0.000 claims description 13
- 238000011144 upstream manufacturing Methods 0.000 claims description 11
- 238000001514 detection method Methods 0.000 claims description 5
- 230000032258 transport Effects 0.000 claims 3
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 58
- 238000000034 method Methods 0.000 description 26
- 230000002950 deficient Effects 0.000 description 7
- 238000005452 bending Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005401 electroluminescence Methods 0.000 description 5
- 238000009434 installation Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
- H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/16—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
- G01M11/08—Testing mechanical properties
- G01M11/081—Testing mechanical properties by using a contact-less detection method, i.e. with a camera
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M5/00—Investigating the elasticity of structures, e.g. deflection of bridges or air-craft wings
- G01M5/0033—Investigating the elasticity of structures, e.g. deflection of bridges or air-craft wings by determining damage, crack or wear
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M5/00—Investigating the elasticity of structures, e.g. deflection of bridges or air-craft wings
- G01M5/0075—Investigating the elasticity of structures, e.g. deflection of bridges or air-craft wings by means of external apparatus, e.g. test benches or portable test systems
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M5/00—Investigating the elasticity of structures, e.g. deflection of bridges or air-craft wings
- G01M5/0091—Investigating the elasticity of structures, e.g. deflection of bridges or air-craft wings by using electromagnetic excitation or detection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the present invention relates to a photovoltaic cell inspection apparatus capable of reliably detecting the presence or absence of fine cracks.
- photovoltaic module in which a plurality of photoelectric conversion cells mainly made of silicon are electrically connected to form a panel.
- the photovoltaic cell and photovoltaic module are generally expensive because the operation (output) inspection is difficult and they are still in the development stage.
- Examples of the inspection method include a method (method 1) of evaluating photoelectric conversion output using a light source that changes sunlight, and a method of measuring current and voltage induced using an electron beam or a laser beam. Generally used (Method 2).
- a photovoltaic module made of a gallium arsenide single crystal semiconductor used for a light emitting diode has been developed.
- electroluminescence is generated by biasing in the forward direction.
- a method of inspecting by observing has also been proposed (Method 3).
- the method 1 and the method 2 are complicated in the evaluation method in the inspection.
- the method 1 evaluates the output of the entire photovoltaic module (which is a product)
- the photovoltaic cell is evaluated individually. is not.
- Method 3 cannot be employed in photovoltaic cells using silicon materials that are currently most popular.
- Patent Document 1 proposes a technique that can easily and accurately evaluate the photoelectric conversion performance of the photovoltaic cell (and photovoltaic module) without requiring a large facility.
- Patent Document 1 discloses that when forward current is injected into at least one of single crystal and polycrystalline semiconductor silicon, electroluminescence is observed even under normal carrier injection conditions at room temperature, and the light emission thereof. Based on the fact that the intensity corresponds one-to-one with the distribution of the diffusion length of minority carriers, the main feature is that the inspection is performed as follows.
- Patent Document 1 is a technique in which a photovoltaic cell composed mainly of a silicon semiconductor is caused to emit light by introducing a direct current in the forward direction, and is evaluated based on the light emission characteristics of the cell.
- the photovoltaic module generates fine wrinkles (hereinafter referred to as microcracks) on its surface due to contact or the like in the manufacturing stage.
- This microcrack is so difficult to detect that it may be in the manufacturing and shipping stage of the photovoltaic cell itself.
- an external force such as slight distortion or bending (hereinafter referred to as stress) when assembling a photovoltaic module, Growing, the entire photovoltaic module may become unusable.
- the problem to be solved is that it is extremely difficult to discriminate microcracks and noise in image data obtained by generating electroluminescence in a photovoltaic cell and erroneous detection occurs frequently.
- the photovoltaic cell inspection apparatus of the present invention includes a stress applying unit for applying stress to the photovoltaic cell, an imaging unit for imaging the photovoltaic cells before and after the stress applying by the stress applying unit,
- the main feature is that it includes a processing unit that determines the presence / absence of a defect based on the difference between the two image data obtained by the imaging unit.
- the photovoltaic cell inspection apparatus of the present invention grows microcracks that exist by applying stress to the photovoltaic cell by the stress applying unit, and determines the presence or absence of defects based on the difference between the image data before and after the stress is applied. Therefore, there is an advantage that it is possible to reliably determine the presence or absence of a microcrack that is minute in existence and is difficult to discriminate due to confusion with noise in the image data.
- FIG. 1 shows a configuration of a photovoltaic cell inspection apparatus according to the present invention, in which (a) is a perspective view, (b) is a view from arrow A in (a), and (c) is a view from arrow B in (a).
- FIG. 2 is a block diagram showing the configuration of the photovoltaic cell inspection apparatus of the present invention (Example 1).
- FIG. 3 is a diagram showing another configuration of the photovoltaic cell inspection apparatus of the present invention (Example 1).
- FIG. 4 is a diagram showing the configuration of the photovoltaic cell inspection apparatus of the present invention (Example 2).
- FIG. 5 is a diagram showing a microcrack inspection situation (Example 2).
- FIG. 6 is a diagram showing another configuration using the photovoltaic cell inspection apparatus of the present invention (Example 3).
- both photovoltaic cells before and after being stressed by the stress applying unit are imaged, and both image data This was realized by determining the presence / absence of a defect based on the difference.
- FIGS. 1 to 3 show a mode of the first embodiment relating to the photovoltaic cell inspection apparatus 1 (hereinafter referred to as the inspection apparatus 1) of the present invention.
- the inspection apparatus 1 is not particularly limited in its main material, but in this example, for example, a rectangular photovoltaic cell C (hereinafter referred to as a cell C), for example, made of silicon that is most widely used at present, for example, Inspects for the presence of microcracks.
- the servo motor 2 a and the servo motor 2 a move downward together with the servo motor 2 a to the cell C. It consists of a press head 2b that contacts and presses. The press head 2b is provided with a load cell 2c.
- the load cell 2c measures the pressing force by the press head 2b.
- the measurement data from the load cell 2c is fed back to the control unit 11 (stress calculation unit 11A) described later for driving control of the servo motor 2a.
- the stress applying unit 2 shown in FIG. 3 is of a type that presses in a non-contact manner, unlike the type that contacts the cell C of FIG.
- the stress applying unit 2 shown in FIG. 3 has a compressed air nozzle 2c that moves downward until just before contacting the cell C together with the servo motor 2a and injects air of a predetermined pressure at that position.
- the stress applying unit 2 is applied with stress by, for example, a method of hitting and playing the cell C in contact or non-contact with an external force that does not damage the normal cell C. If it does not specifically limit.
- the stress applying unit 2 in this example is configured to be movable together with a camera 5 described later by the switching unit 11C of the control unit 11 between the center upper portion of the cell C and the position where the central part is retracted. ing.
- the distance sensor 3 is a distance sensor provided in the cell C in contact with, for example, the back side of the portion where the stress applying unit 2 presses the cell C in this example.
- the distance sensor 3 is connected to the stress detection unit 11B of the control unit 11.
- the distance sensor 3 detects the amount of bending of the cell C when it is pressed with reference to the state where it is not yet pressed by the stress applying unit 2.
- the distance sensor 3 is a contact type in this example, but may be a non-contact type.
- the inspection apparatus 1 applies stress to the cell C to the extent necessary for the inspection by using the distance sensor 3 (with the load cell 2c in this example) without damaging the cell C in which defects such as microcracks have not occurred. It can be done.
- the support portion 4 is a support part on which the corner of the cell C is placed.
- the support portion 4 includes a fixed support portion 4A (with hatching shown) and a follow-up support portion 4B provided at diagonal positions of the rectangular cell C.
- the fixed support part 4A is fixed to the installation surface and does not follow the bending of the cell C by the stress applying part 2.
- the follower support part 4B presses the cell C from the stress applying part 2 in the installation surface direction, the follower support part 4B changes its height so as to follow this bending and sink in the installation surface direction.
- the support portion 4 may be configured only by the fixed support portion 4A, but in particular, by providing the follow-up support portion 4B, the cell C can be easily bent, and damage caused by the stress applying portion 2 can be prevented. Can be suppressed.
- 5 is a camera as an imaging unit that moves in place of the stress applying unit 2 above the center of the cell C. That is, the camera 5 images the cell C before and after the stress is applied by the stress applying unit 2.
- FIG. 2 shows the configuration of the entire inspection apparatus 1.
- the entire inspection apparatus 1 is configured to be controlled by a control unit 11 as a processing unit.
- the control unit 11 includes a stress calculation unit 11A that is connected to the stress applying unit 2 and calculates a stress amount in the stress applying unit 2, that is, a pressing force. Further, the control unit 11 includes a stress detection unit 11B that is connected to the distance sensor 3 and detects the amount of bending of the cell C as described above.
- control unit 11 is provided with an image processing unit 11C that performs a collation process on both pre-stressed and post-stressed image data captured by the camera 5, and performs a difference process between these image data.
- control unit 11 includes a determination unit 11C that determines the presence or absence of a microcrack based on the difference processing result of the image processing unit 11C.
- Reference numeral 11E denotes a switching unit that controls switching of the positions of the stress applying unit 2 and the camera 5.
- the inspection apparatus 1 configured as described above determines the presence or absence of microcracks as follows.
- a method is adopted in which the cell C is heated and discriminated from the degree of heat distribution.
- the camera 5 uses an infrared camera, and the presence / absence of a microcrack is determined based on the infrared image data processed by the image processing unit 11C.
- Example 1 the cell C is heated, and then the infrared image data A before applying stress is obtained by the camera 5. Subsequently, the camera 5 is retracted from the upper center of the cell C by the switching unit 11E, and the stress applying unit 2 is positioned above the center of the cell C.
- the stress applying unit 2 is actuated and bent to such an extent that the cell C is not damaged. At this time, if a microcrack exists in the cell C, the crack grows. On the other hand, if there are no microcracks in cell C, no damage will occur.
- the stress applying unit 2 After the cell C is pressed by the stress applying unit 2 and stress is applied, the stress applying unit 2 retreats again, and the camera 5 is positioned again above the center of the cell C. Then, the infrared image data B after applying stress is obtained by the camera 5.
- the infrared image data A and B are input to the image processing unit 11C, where the image data is collated, and the difference processing between the infrared image data B and the infrared image data A is performed.
- the infrared image data B shows microcracks that have grown if stressed.
- the noise originally reflected in the infrared image data A and the microcracks (if present) are removed. Then, if it exists in the difference image data, only the grown microcracks remain. Of course, if it does not exist, nothing remains on the difference image data.
- the discriminating unit 11D determines that there is any image on the difference image data, the discriminating unit discriminates that the inspected cell C has microcracks. Of course, if there is nothing, good product discrimination is performed.
- Example 2 shown in FIG. 4 instead of the inspection method for heating the cell C in Example 1 described above, a method for introducing electroluminescence into the cell C proposed in Patent Document 1 (see FIG. 4).
- the inspection method is referred to as EL method).
- the inspection apparatus 1 includes a dark room 6, a probe 7, a sheet 8, and a power source 9 in addition to the configuration of the first embodiment.
- the dark room 6 is for making it easy to capture the light emission state of the cell C with the camera 5.
- the configuration excluding the control unit 11 is provided in the dark room 6.
- the probe 7 is connected to the surface side of the cell C and has a comb-like shape that forms a pair connected to the negative pole of the power source 9.
- one of the comb teeth corresponds to one of the electrodes of the cell C.
- the sheet 8 is provided so as to contact the back side of the cell C and is connected to the positive electrode of the power source 9.
- the sheet 8 is placed on the fixed support portion 4A and the follow-up support portion 4B. Therefore, the cell C is supported by the support portion 4 by being placed on the sheet 8.
- the presence or absence of microcracks is inspected as follows.
- a current is introduced from the power source 9 into the cell C through the probe 7 and the sheet 8. Then, the cell C emitted before the application of stress is imaged by the camera 5 to obtain image data A as shown in FIG. Thereafter, the stress applying unit 2 applies stress to the cell C. Note that the cell C does not need to emit light during this stress application.
- the cell C After applying the stress, the cell C is made to emit light again under the same conditions and picked up by the camera 5 to obtain image data B as shown in FIG. Then, the image data A and B are input to the image processing unit 11C, where the image data is collated, and difference processing between the image data B and the image data A is performed.
- image data as shown in FIG. 5C is obtained. That is, the noise originally reflected in the image data A and the microcracks (if present) are removed. Then, in the difference image data, if it exists, only the grown microcracks remain, and if it does not exist, nothing remains.
- the discriminating unit 11D determines that there is any image on the difference image data, the discriminating unit discriminates that the inspected cell C has microcracks. Of course, if there is nothing, good product discrimination is performed. Thus, even the inspection apparatus 1 according to the second embodiment can obtain the same effects as those of the first embodiment.
- Example 3 shown in FIG. 6 is a process in which the cell C is transported from upstream to downstream instead of the configuration in which stressing and imaging before and after stressing are performed at the same location in the above-described Examples 1 and 2. These are performed, and finally, the non-defective product and the defective product are separated.
- Example 3 has the conveyance part 10 which mounts the cell C intermittently and conveys it sequentially from upstream to downstream.
- This conveyance part 10 consists of a belt conveyor, and the stress provision part 2 is provided in the site
- conveyance part 10 is divided
- mounting conveyors 10a and 10b for individually mounting the cells C on the support part 4 are provided, respectively. Yes.
- the camera 5 first imaging unit and the camera 5 (immediately before the site where the stress applying unit 2 is provided on the upstream side 10A and immediately after the site where the stress applying unit 2 is provided on the downstream side 10B, respectively.
- a second imaging unit is provided.
- a separation unit 10C for sending the cell C determined to be defective to the defective product collection path is provided downstream of the position where the camera 5 for imaging the cell C after applying stress is provided. It has been.
- the classification unit 10C is controlled by a signal from the determination unit 11D in FIG. Moreover, in Example 3, the switching part 11E in the structure of the control part 11 shown in FIG. 2 is unnecessary.
- Example 3 the inspection procedure will be described below assuming that the cell C is heated in the same manner as in Example 1 and is imaged by the camera 5 for infrared imaging. At this time, heating means is provided immediately upstream (upstream) of the camera 5 on the upstream side 10A, but the illustration is omitted.
- the cells C that are sequentially sent are heated in order from the upstream side 10A, and immediately after being imaged by the camera 5 (infrared image data A) and sent to the position of the stress applying unit 2, stress is applied here. .
- the cell C moves to the downstream side 10B and is imaged by the camera 5 (infrared image data B), and the microcrack is generated based on the infrared image data B and A during conveyance of the downstream side 10B. The presence or absence of is determined.
- the defective cell C determined to have a microcrack is sorted into the collection path by the operation of the sorting unit 10C based on the control of the determination unit 11D of the control unit 11. On the other hand, a non-defective cell C determined to have no microcracks. Since the sorting unit 10C does not operate, the sorting unit 10C is transported as it is to the downstream of the downstream side 10B, such as a non-defective product collecting unit, packaging, and assembly. *
- the time for switching between the camera 5 and the stress applying unit 2 can be shortened, so that a large number of microcracks can be inspected in a short time and efficiently. Therefore, it can contribute to the cost reduction of the cell C and the photovoltaic module and panel.
- the inspection can be performed regardless of the state of imaging by the camera. Therefore, it can be applied in various situations, whether indoors or outdoors.
Abstract
Description
2 ストレス付与部
3 距離センサ
4 支持部
4A 固定支持部
4B 追従支持部
5 カメラ
11C画像処理部
11D判別部 DESCRIPTION OF SYMBOLS 1 (Photovoltaic cell)
Claims (4)
- 光発電セルの欠陥を検出する光発電セル検査装置において、光発電セルにストレスを与えるためのストレス付与部と、前記ストレス付与部によるストレスが与えられる前と後の両者の光発電セルを撮像する撮像部と、この撮像部で得た両者の画像データの差分に基づいて欠陥の有無を判定する処理部とを備えたことを特徴とする光発電セル検査装置。 In a photovoltaic cell inspection apparatus for detecting a defect in a photovoltaic cell, a stress applying unit for applying stress to the photovoltaic cell, and both photovoltaic cells before and after the stress applied by the stress applying unit are imaged A photovoltaic cell inspection apparatus comprising: an imaging unit; and a processing unit that determines the presence / absence of a defect based on a difference between the image data obtained by the imaging unit.
- 光発電セルの隅部に設けられ、固定的に支持する固定支持部と、ストレス付与部による光発電セルのストレス付与方向に追従して支持する追従支持部と、を備えたことを特徴とする請求項1記載の光発電セル検査装置。 A fixed support portion provided at a corner of the photovoltaic cell and fixedly supported, and a follow-up support portion that supports and supports the stress applying direction of the photovoltaic cell by the stress applying portion. The photovoltaic cell inspection apparatus according to claim 1.
- ストレス付与部による光発電セルに対するストレス量を検知するストレス検知部を設けたことを特徴とする請求項1又は2記載の光発電セル検査装置。 3. The photovoltaic cell inspection apparatus according to claim 1, further comprising a stress detection unit that detects the amount of stress applied to the photovoltaic cell by the stress applying unit.
- 光発電セルを間欠的に載置して順次上流から下流へと搬送する搬送部を有し、この搬送部の上流側から順に、第1の撮像部、ストレス付与部、第2の撮像部、とを設けたことを特徴とする請求項1~請求項3のいずれかに記載の光発電セル検査装置。 It has a transport unit that intermittently mounts photovoltaic cells and transports them sequentially from upstream to downstream, and in order from the upstream side of this transport unit, in order, a first imaging unit, a stress applying unit, a second imaging unit, The photovoltaic cell inspection apparatus according to any one of claims 1 to 3, wherein the photovoltaic cell inspection apparatus is provided.
Priority Applications (3)
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JP2010550363A JP5261505B2 (en) | 2009-02-10 | 2009-02-10 | Photovoltaic cell inspection device |
KR1020117015536A KR101290520B1 (en) | 2009-02-10 | 2009-02-10 | Photovoltaic cell inspecting device |
PCT/JP2009/052225 WO2010092665A1 (en) | 2009-02-10 | 2009-02-10 | Photovoltaic cell inspecting device |
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PCT/JP2009/052225 WO2010092665A1 (en) | 2009-02-10 | 2009-02-10 | Photovoltaic cell inspecting device |
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Cited By (2)
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GB2488548A (en) * | 2011-02-28 | 2012-09-05 | Rec Wafer Norway As | On-line testing for mechanical stability of sheet material by applying twist |
KR101282293B1 (en) * | 2011-07-13 | 2013-07-10 | 한국에너지기술연구원 | Stress testing device for photovoltaic module and testing method of the same |
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2009
- 2009-02-10 JP JP2010550363A patent/JP5261505B2/en not_active Expired - Fee Related
- 2009-02-10 KR KR1020117015536A patent/KR101290520B1/en not_active IP Right Cessation
- 2009-02-10 WO PCT/JP2009/052225 patent/WO2010092665A1/en active Application Filing
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JPH01219538A (en) * | 1988-02-26 | 1989-09-01 | Shimadzu Corp | Test-piece cracking observing device |
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JP2004251641A (en) * | 2003-02-18 | 2004-09-09 | Sharp Corp | Apparatus and method for inspecting semiconductor wafer |
JP2008026113A (en) * | 2006-07-20 | 2008-02-07 | Japan Aerospace Exploration Agency | Defect inspection device of solar cell and method for inspecting defect of solar cell |
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Cited By (3)
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GB2488548A (en) * | 2011-02-28 | 2012-09-05 | Rec Wafer Norway As | On-line testing for mechanical stability of sheet material by applying twist |
WO2012117327A1 (en) * | 2011-02-28 | 2012-09-07 | Rec Wafer Norway As | On-line testing for mechanical stability of sheet material |
KR101282293B1 (en) * | 2011-07-13 | 2013-07-10 | 한국에너지기술연구원 | Stress testing device for photovoltaic module and testing method of the same |
Also Published As
Publication number | Publication date |
---|---|
JP5261505B2 (en) | 2013-08-14 |
JPWO2010092665A1 (en) | 2012-08-16 |
KR101290520B1 (en) | 2013-07-26 |
KR20110114557A (en) | 2011-10-19 |
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