WO2010069287A3 - Verfahren zur abscheidung von mikrokristallinem silizium auf einem substrat - Google Patents

Verfahren zur abscheidung von mikrokristallinem silizium auf einem substrat Download PDF

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Publication number
WO2010069287A3
WO2010069287A3 PCT/DE2009/001649 DE2009001649W WO2010069287A3 WO 2010069287 A3 WO2010069287 A3 WO 2010069287A3 DE 2009001649 W DE2009001649 W DE 2009001649W WO 2010069287 A3 WO2010069287 A3 WO 2010069287A3
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WO
WIPO (PCT)
Prior art keywords
plasma
silicon
reactive
containing gas
substrate
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Application number
PCT/DE2009/001649
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English (en)
French (fr)
Other versions
WO2010069287A2 (de
Inventor
Aad Gordijn
Thilo Kilper
Bernd Rech
Sandra Schicho
Original Assignee
Forschungszentrum Jülich GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Jülich GmbH filed Critical Forschungszentrum Jülich GmbH
Priority to US12/998,821 priority Critical patent/US20110284062A1/en
Priority to JP2011541079A priority patent/JP5746633B2/ja
Priority to CN2009801510140A priority patent/CN102257630A/zh
Priority to EP09801654A priority patent/EP2368275A2/de
Publication of WO2010069287A2 publication Critical patent/WO2010069287A2/de
Publication of WO2010069287A3 publication Critical patent/WO2010069287A3/de

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/076—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • H01L31/1824—Special manufacturing methods for microcrystalline Si, uc-Si
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Die Erfindung betrifft ein Verfahren zur Abscheidung von mikrokristallinem Silizium auf einem Substrat in einem Plasmakammersystem mit den Schritten: das Plasmakammersystem weist vor dem Start des Plasmas zumindest ein reaktives, siliziumhaltiges Gas und Wasserstoff oder ausschließlich Wasserstoff auf, das Plasma wird gestartet, dem Kammersystem wird nach dem Plasmastart kontinuierlich ausschließlich reaktives, siliziumhaltiges Gas zugeführt oder dem Kammersystem wird nach dem Plasmastart kontinuierlich zumindest ein Gemisch, umfassend ein reaktives, siliziumhaltiges Gas und Wasserstoff zugeführt, wobei die Konzentration an reaktivem, siliziumhaltigen Gas bei der Zufuhr in die Kammer größer als 0,5 % eingestellt wird, und die Plasmaleistung wird zwischen 0,1 und 2,5 W/cm2 Elektrodenfläche eingestellt, es wird eine Abscheidungsrate von größer als 0,5 nm/s gewählt, und die mikrokristalline Schicht mit einer Dicke von weniger als 1000 Nanometer auf dem Substrat abgeschieden.
PCT/DE2009/001649 2008-12-18 2009-11-18 Verfahren zur abscheidung von mikrokristallinem silizium auf einem substrat WO2010069287A2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/998,821 US20110284062A1 (en) 2008-12-18 2009-11-18 Method for the deposition of microcrystalline silicon on a substrate
JP2011541079A JP5746633B2 (ja) 2008-12-18 2009-11-18 基材上での微結晶シリコン堆積方法
CN2009801510140A CN102257630A (zh) 2008-12-18 2009-11-18 在衬底上沉积微晶硅的方法
EP09801654A EP2368275A2 (de) 2008-12-18 2009-11-18 Verfahren zur abscheidung von mikrokristallinem silizium auf einem substrat

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008063737.8 2008-12-18
DE102008063737A DE102008063737A1 (de) 2008-12-18 2008-12-18 Verfahren zur Abscheidung von mikrokristallinem Silizium auf einem Substrat

Publications (2)

Publication Number Publication Date
WO2010069287A2 WO2010069287A2 (de) 2010-06-24
WO2010069287A3 true WO2010069287A3 (de) 2011-03-03

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PCT/DE2009/001649 WO2010069287A2 (de) 2008-12-18 2009-11-18 Verfahren zur abscheidung von mikrokristallinem silizium auf einem substrat

Country Status (6)

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US (1) US20110284062A1 (de)
EP (1) EP2368275A2 (de)
JP (1) JP5746633B2 (de)
CN (1) CN102257630A (de)
DE (1) DE102008063737A1 (de)
WO (1) WO2010069287A2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2740817A1 (de) * 2012-12-05 2014-06-11 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Mikrokristallsiliziumdünnfilm-PECVD mit Wasserstoff und Silanmischungen
DE102013102074A1 (de) 2013-03-04 2014-09-04 Schmid Vacuum Technology Gmbh Anlage und Verfahren zur Beschichtung von Substraten mit polykristallinem Silizium

Citations (1)

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US20080096291A1 (en) * 2006-10-12 2008-04-24 Canon Kabushiki Kaisha Method for forming semiconductor device and method for forming photovoltaic device

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JP2001355073A (ja) * 2001-04-27 2001-12-25 Canon Inc 堆積膜形成装置
US7186663B2 (en) * 2004-03-15 2007-03-06 Sharp Laboratories Of America, Inc. High density plasma process for silicon thin films
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JP4025744B2 (ja) * 2004-03-26 2007-12-26 株式会社カネカ 積層型光電変換装置の製造方法
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Also Published As

Publication number Publication date
US20110284062A1 (en) 2011-11-24
WO2010069287A2 (de) 2010-06-24
DE102008063737A9 (de) 2010-10-07
JP2012512534A (ja) 2012-05-31
DE102008063737A1 (de) 2010-06-24
EP2368275A2 (de) 2011-09-28
CN102257630A (zh) 2011-11-23
JP5746633B2 (ja) 2015-07-08

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