WO2010068027A2 - Positive photosensitive organic-inorganic hybrid insulator composition - Google Patents

Abstract

The present invention relates to a positive photosensitive organic-inorganic hybrid insulator composition that comprises: i) a reactive silane containing 1-3 phenyl groups represented by chemical formula (1); and ii) a siloxane oligomer compound that is obtained by hydrolysis and condensation polymerization of a silane monomer of a tetra-functional silane represented by chemical formula (2) under a catalyst and has the average molecular weight (converted to polystyrene) of 1,000-2,0000. The positive photosensitive organic-inorganic hybrid insulator composition according to the present invention simplifies the process and reduces costs by forming a double structure of existing SiNx Passivation/acrylic photo-sensitive organic insulator into a mono-layer, improves sensitivity, resolution, process margin, transparency, and anti-thermochromism, reduces electric power consumption by obtaining an insulator having a low dielectric constant, and removes an afterimage, crosstalk, and a shift phenomenon of threshold voltage. In addition, the composition can increase reliability of a panel by enabling low outgassing through high thermal endurance. Therefore, the composition can be applied to a passivation insulator, a gate insulator, and a plate insulator in various displays.

Description

Positive photosensitive organic-inorganic hybrid insulating film composition

The present invention relates to a positive photosensitive organic-inorganic hybrid insulating film composition, and more specifically, to form a dual structure of the existing SiNx Passivation / acrylic photosensitive organic insulating film as a single layer (layer) can bring about process simplification and production cost reduction In addition, it has excellent performances such as sensitivity, resolution, process margin, transparency, and heat dissipation resistance, and in particular, enables a low dielectric constant insulating film to reduce power consumption, eliminating afterimages, crosstalk, and shift of threshold voltage. In addition, it is possible to secure excellent panel reliability by enabling low outgassing due to excellent heat resistance, and through this, positive type photosensitive property that can be usefully applied to not only passivation insulating film and gate insulating film but also flattening film in various displays. An organic-inorganic hybrid insulating film composition.

Recently, a double film made of SiNx passivation and an acrylic photosensitive organic insulating film is used for TFT type liquid crystal display device or integrated circuit device to insulate the wirings arranged between layers and to improve the aperture ratio. Since SiNx film is made through CVD process and acrylic photosensitive organic insulating film is made by photo process, production capacity problem according to process time is serious.

In the conventional insulating film, when the SiNx film formed by the CVD alone is formed, the opening ratio of the display is lowered, and as the size of the display increases, the area occupied by the deposition equipment in the production line is also significant, which acts as a large burden on the large facility. In addition, when the acrylic photosensitive organic insulating film is formed by the existing photo process alone, it causes electrical defects such as afterimage, crosstalk, and shift of threshold voltage. This is known to be caused by current leakage due to defects on the film, which is a disadvantage of organic materials.

Accordingly, there is a great demand for a single layer insulating film that can be formed only by a photo process based on an organic-inorganic hybrid technology, and technology development for this is being actively performed.

In order to solve the problems of the prior art as described above, the present invention can form a dual structure of the existing SiNx Passivation / acrylic photosensitive organic insulating film as a single layer (layer), which can bring about process simplification and production cost reduction, sensitivity, resolution, In addition to excellent performance margins, transparency, heat dissipation resistance, and the like, it is possible to lower the power consumption by enabling a low dielectric constant insulating film, and to eliminate afterimages, crosstalk, and shift of threshold voltage. By enabling low outgassing due to excellent heat resistance, excellent panel reliability can be secured. Through this, positive type photosensitive organic-inorganic hybrid insulating film composition which can be usefully applied to not only passivation insulating film and gate insulating film but also planarizing film in various displays. , Pattern formation method of display element using the same, and positive type Light-oil-is an object of the present invention to provide a display device comprising a cured product of the insulating inorganic hybrid composition in an insulating film.

In order to achieve the above object, the present invention

In a positive photosensitive organic-inorganic hybrid insulating film composition, a) i) a reactive silane comprising 1-3 phenyl groups represented by the following formula (1), ii) a hydrolysis of a tetrafunctional reactive silane represented by the following formula (2) under a catalyst And siloxane oligomeric compounds having a polystyrene reduced weight average molecular weight (Mw) obtained by condensation polymerization of 1,000 to 2,0000; b) 1,2-quinonediazide compounds; And c) a solvent, wherein the positive type photosensitive organic-inorganic hybrid insulating film composition is provided.

 [Formula 1]

(R ₁ ) nSi (R ₂ ) _4-n

In Formula 1, R ₁ is a phenyl group, R ₂ is each independently alkoxy group having 1 to 4 carbon atoms, phenoxy, or acetoxy, n is an integer of 1-3,

[Formula 2]

Si (R ₃ ) ₄

Preferably the positive photosensitive organic-inorganic hybrid insulating film composition

a) 100 parts by weight of the siloxane oligomer compound; b) 5 to 50 parts by weight of the 1,2-quinonediazide compound; And, c) a solvent such that the solids content is 10-50% by weight.

In another aspect, the present invention provides a method of forming a pattern of a display device, characterized in that using the positive photosensitive organic-inorganic hybrid insulating film composition.

The present invention also provides a display device comprising a cured body of the positive photosensitive organic-inorganic hybrid insulating film composition.

Preferably, the cured product of the positive photosensitive organic-inorganic hybrid insulating film composition is applied as a passivation insulating film, a gate insulating film, or a planarizing film.

The positive type photosensitive organic-inorganic hybrid insulating film composition according to the present invention can form a dual structure of a conventional SiNx Passivation / acrylic photosensitive organic insulating film as one layer, which can bring about process simplification and reduction of production cost. In addition to excellent performance margins, transparency, heat dissipation resistance, and the like, it is possible to lower the power consumption by enabling a low dielectric constant insulating film, and to eliminate afterimages, crosstalk, and shift of threshold voltage. By enabling low outgassing due to its excellent heat resistance, it is possible to secure excellent panel reliability. Through this, it can be usefully applied not only to passivation insulation film and gate insulation film but also to planarization film.

 The present invention provides a positive photosensitive organic-inorganic hybrid insulating film composition comprising: a) i) a reactive silane comprising 1-3 phenyl groups represented by the following Chemical Formula 1, and ii) a tetrafunctional reactive silane represented by the following Chemical Formula 2; Siloxane oligomer compounds having a polystyrene reduced weight average molecular weight (Mw) obtained by hydrolysis and condensation polymerization under a range from 1,000 to 2,0000; b) 1,2-quinonediazide compounds; And c) a solvent.

[Formula 1]

(R ₁ ) nSi (R ₂ ) _4-n

In Formula 1, R ₁ is a phenyl group, R ₂ is each independently alkoxy group having 1 to 4 carbon atoms, phenoxy, or acetoxy, n is an integer of 1-3,

[Formula 2]

Si (R ₃ ) ₄

R ₃ in Formula 2 are each independently an alkoxy group, phenoxy, or acetoxy group having 1 to 4 carbon atoms.

Preferably, the positive photosensitive organic-inorganic hybrid insulating film composition comprises a) 100 parts by weight of the siloxane oligomer compound; b) 5 to 50 parts by weight of the 1,2-quinonediazide compound; And c) the solvent so that the solids content is 10-50% by weight.

The siloxane oligomer compound of a) used in the present invention can solve problems such as afterimage, crosstalk, and shift of threshold voltage, which have previously been a problem in order to replace the conventional double layer composed of SiNx passivation and acrylic photosensitive organic insulating layer with a single layer. It is a binder that can secure excellent panel reliability by enabling low outgassing due to excellent heat resistance.

The siloxane oligomer compound of a) comprises a) i) a reactive silane comprising 1-3 phenyl groups represented by Formula 1, and ii) a silane monomer of the tetrafunctional reactive silane represented by Formula 2 as an acid or base catalyst. Under hydrolysis and condensation polymerization.

A) i) the reactive silane comprising 1-3 phenyl groups represented by the formula (1) used in the present invention is phenyltrimethoxysilane, phenyltriethoxysilane, phenyltributoxysilane, phenylmethyldimethoxysilane , Phenyltriacetoxysilane, phenyltriphenoxysilane, diphenyldimethoxysilane, diphenyldiethoxysilane, diphenyldiphenoxysilane, triphenylmethoxysilane, triphenylethoxysilane, and the like. It can mix and use species.

A) i) Reactive silane comprising 1-3 phenyl groups represented by Formula 1 is preferably included in 50-90 parts by weight based on the total monomers. If the content is less than 50 parts by weight cracks (crack) may occur when forming the film, if it exceeds 90 parts by weight it may be difficult to control the molecular weight due to the reactivity during the polymerization.

The a) ii) tetrafunctional reactive silane represented by the formula (2) used in the present invention includes tetramethoxysilane, tetraethoxysilane, tetrabutoxysilane, tetraphenoxysilane, tetraacetoxysilane, and the like. Or it can mix and use 2 or more types.

A) ii) The tetrafunctional reactive silane represented by Formula 2 is preferably included in an amount of 10-50 parts by weight based on the total monomers. If the content is less than 10 parts by weight of the photosensitive organic-inorganic insulating film composition may form a poor solubility in the aqueous alkali solution when the pattern is formed, if it exceeds 50 parts by weight may be too large solubility in the aqueous alkali solution. .

In addition, the siloxane oligomer compound of a) used in the present invention may be hydrolyzed and condensation-polymerized under an acid or base catalyst, in addition to the silane monomers of i) and ii), and iii) a reactive silane represented by the following general formula (3). have.

[Formula 3]

(R ₄ ) nSi (R ₅ ) _4-n

In Formula 3, R ₄ is each independently an alkoxy group having 1 to ₄ carbon atoms, phenoxy, or acetoxy, and R ₅ is hydrogen, an alkyl group having 1 to 10 carbon atoms, an aryl group, an epoxy group, a vinyl, hexenyl group, or acryl. Group, a methacryl group, or an allyl group, n is an integer of 1-3.

Iii) Specific examples of the reactive silane represented by Formula 3 include trimethoxysilane, triethoxysilane, trimethylethoxysilane, triethylphenoxysilane, trimethylmethoxysilane, methyltrimethoxysilane, and methyltriethoxy Silane, methyltriphenoxysilane, dimethyldimethoxysilane, dimethyldiethoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, ethyltriacetoxysilane, methyltriacetoxysilane, propyltrimethoxysilane, propyl tree Ethoxysilane, diisopropyldimethoxysilane, diisobutyldimethoxysilane, chloropropyltrimethoxysilane, chloropropyltriethoxysilane, chloropropylmethyldimethoxysilane, chloroisobutylmethyldimethoxysilane, trifluoro Propyltrimethoxysilane, trifluoropropylmethyldimethoxysilane, i-butyltrimethoxysilane, i-butyltriethoxysilane, n-butyltrimethoxysilane, n- Yltriethoxysilane, n-butylmethyldimethoxysilane, n-hexyltrimethoxysilane, n-hexyltriethoxysilane, n-octyltrimethoxysilane, decyltrimethoxysilane, cyclohexylmethyldimethoxysilane, Cyclohexylethyldimethoxysilane, dicyclopentyldimethoxysilane, t-butylethyldimethoxysilane, t-butylpropyldimethoxysilane, dicyclohexyldimethoxysilane, i-octyltrimethoxysilane, n-octyltrie Methoxysilane, glycidoxypropyltrimethoxysilane, glycidoxypropyltriethoxysilane, glycidoxypropylmethyldimethoxysilane, glycidoxypropyldiethoxysilane, epoxycyclohexylethyltrimethoxysilane, methacryloxy Propyltrimethoxysilane, Acryloxypropyltrimethoxysilane, Vinyltrimethoxysilane, Vinyltriethoxysilane, Vinyltriacetoxysilane, Methylvinyldimethoxysilane, Aryltrimethoxysilane, Hexenyltrimethoxysilane Back It can be used individually or in mixture of 2 or more types.

Iii) When using the reactive silane represented by the formula (3) or a mixture thereof, the amount of use is preferably 10 to 50 parts by weight of the total silane monomers. When the amount of use is within the above range, the sensitivity and developability may be further improved.

The oligomeric siloxane compound of a) used in the positive type photosensitive organic-inorganic hybrid insulating film composition of the present invention can bulk or solution polymerize the above monomers under water, an acid or a base catalyst, and undergo hydrolysis and condensation polymerization. Obtained through a process or the like.

Acid catalysts that can be used during the polymerization include hydrochloric acid, nitric acid, sulfuric acid, oxalic acid, formic acid, acetic acid, propionic acid, butanoic acid, pentanic acid, and the like. It may be used alone or in combination of two or more kinds at the same time.

It is preferable that the oligomer siloxane compound of a) finally obtained has a polystyrene reduced weight average molecular weight (Mw) of 1,000-20,000 via GPC. When the polystyrene reduced weight average molecular weight is less than 1,000, there is a problem that developability, residual film ratio, etc. are lowered when evaluating a positive type photosensitive organic-inorganic hybrid insulating film, or defects such as pinholes are formed during film formation. In the case of exceeding, the sensitivity of the positive photosensitive organic-inorganic hybrid insulating film is lowered or the developability of the pattern is inferior.

In addition, the positive photosensitive organic-inorganic hybrid insulating film composition of the present invention includes b) 1,2-quinonediazide compound, and the 1,2-quinonediazide compound of b) used in the present invention is a photosensitive compound. Used. The b) 1,2-quinonediazide compound may be one obtained by reacting a phenol compound represented by the following formula (4) with a naphthoquinone diazide sulfonic acid halogen compound.

[Formula 4]

[Revision 21.01.2010 under Rule 26]

In Formula 4, R ₁ to R ₆ are each independently hydrogen, halogen, an alkyl group having 1 to 4 carbon atoms, an alkenyl group or a hydroxyl group, and R ₇ and R ₈ are each independently hydrogen, a halogen or an alkyl group having 1 to 4 carbon atoms. R ₉ is hydrogen or an alkyl group having 1 to 4 carbon atoms.

Preferably, the 1,2-quinonediazide compound is 1,2-quinonediazide 4-sulfonic acid ester, 1,2-quinonediazide 5-sulfonic acid ester, 1,2-quinonediazide 6-sulfonic acid ester, or the like. Can be used.

As a specific example, the quinone diazide compound may be prepared by reacting a naphthoquinone diazide sulfonic acid halogen compound with a phenol compound represented by the following formula under a weak base.

[Revision 21.01.2010 under Rule 26]

,

,

,

,

,

,

[Revision 21.01.2010 under Rule 26]

,

,

,

,

[Revision 21.01.2010 under Rule 26]

,

,

[Revision 21.01.2010 under Rule 26]

,

,

,

,

,

,

[Revision 21.01.2010 under Rule 26]

,

The said phenolic compound can be used individually or in mixture of 2 or more types.

When the quinone diazide compound is synthesized with the phenol compound and the naphthoquinone diazide sulfonic acid halogen compound as described above, the esterification degree is preferably 50 to 85%. When the esterification degree is less than 50%, the residual film rate may be worse, and when the esterification degree is greater than 85%, storage stability may be lowered.

The b) 1,2-quinonediazide compound is preferably included in an amount of 5 to 50 parts by weight based on 100 parts by weight of the siloxane oligomer compound of a). If the content is less than 5 parts by weight, the difference in solubility between the exposed and non-exposed parts is small, and if it exceeds 50 parts by weight, a large amount of unreacted 1,2-quinonediazide compound is produced when irradiated with light for a short time. There is a problem that the development is difficult because the solubility in the alkali aqueous solution remaining as a developer is too low.

In addition, the positive photosensitive organic-inorganic hybrid insulating film composition of the present invention includes c) a solvent, wherein the solvent of c) does not generate flatness and coating stain of the insulating film to form a uniform pattern profile. do.

The solvent of c) is ethylene glycol alkyl ether acetates such as alcohols such as methanol, ethanol, benzyl alcohol, hexyl alcohol, ethylene glycol methyl ether acetate, ethylene glycol ethyl ether acetate, ethylene glycol methyl ether propionate and ethylene glycol ethyl ether. Ethylene glycol alkyl ether propionates such as propionate Ethylene glycol monoalkyl ethers such as ethylene glycol methyl ether and ethylene glycol ethyl ether Diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether Diethylene glycol alkyl ethers such as diethylene glycol methyl ethyl ether, propylene glycol alkyl ether acetates such as propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, and propylene glycol propyl ether acetate Propylene glycol alkyl ether propionates propylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol propyl ether, propylene such as propylene glycol methyl ether propionate, propylene glycol ethyl ether propionate, and propylene glycol propyl ether propionate Propylene glycol monoalkyl ethers such as glycol butyl ether Dipropylene glycol alkyl ethers such as dipropylene glycol dimethyl ether and diporoethylene glycol diethyl ether Butylene glycol such as butylene glycol monomethyl ether and butylene glycol monoethyl ether Dibutylene glycol alkyl ethers, such as monomethyl ether dibutylene glycol dimethyl ether and dibutylene glycol diethyl ether, etc. can be used individually or in mixture of 2 or more types.

The solvent of c) is preferably included so that the solid content of the positive photosensitive organic-inorganic hybrid insulating film composition is 10 to 50% by weight. If the solid content is less than 10% by weight, there is a problem that the coating thickness is thin, and coating uniformity is lowered. If the solid content is more than 50% by weight, the coating thickness becomes thick, and the coating equipment may be unreasonable during coating. have. If the solids content of the total composition is 10 to 20% by weight, it is easy to use in the Slit Coater, if it is 20 to 50% by weight it is easy to use in the Spin Coater or Slit & Spin Coater.

The positive photosensitive organic-inorganic hybrid insulating film composition of the present invention comprising the above components may further contain d) a plasticizer, e) an epoxy resin, f) a nitrogen-containing crosslinking agent containing an alkanol group, and g) a surfactant, if necessary. It may include.

The plasticizer of d) maintains film characteristics without cracks and maintains high sensitivity after the curing process by adjusting the crosslinking density of the insulating film.

The said plasticizer is phthalate type, such as dioctyl phthalate and diisononyl phthalate, adipate type, such as dioctyl adipate, and phosphate type, such as tricresyl phosphate, 2,2,4-trimethyl-1,3-pentanediol mono Monoisobutyrate systems, such as isobutyrate, etc. can be used individually or in mixture of 2 or more types.

The plasticizer may be included in an amount of 5-20 parts by weight based on 100 parts by weight of the siloxane oligomer compound of a), and when the content is within the above range, the control of crosslinking density is easy, heat resistance is excellent, and generation of fumes during the process is performed. This is advantageous to write down.

The epoxy resin of e) serves to improve heat resistance, adhesion, and the like of the pattern obtained from the photosensitive organic-inorganic hybrid insulating film composition.

Examples of the epoxy resins include glycidyl ester type epoxy resins, glycidyl amine type epoxy resins, heterocyclic epoxy resins such as bisphenol A type epoxy resins, phenol novolak type epoxy resins, cresol novolak type epoxy resins, and cycloaliphatic compounds. An epoxy resin etc. can be used individually or in mixture of 2 or more types, It is preferable to use a bisphenol-A epoxy resin, a cresol novolak-type epoxy resin, or a glycidyl ester type epoxy resin especially.

Preferably, the epoxy resin is contained in an amount of 0.5 to 10 parts by weight based on 100 parts by weight of the siloxane oligomer compound of a). When the epoxy resin is in the above range, heat resistance, adhesive strength, and storage stability are excellent at the same time. -There is an advantage that there is no fear of precipitation on the inorganic hybrid insulating film composition.

In addition, the nitrogen-containing crosslinking agent containing the alkanol group of f) serves to improve the adhesion of the pattern obtained from the photosensitive organic-inorganic hybrid insulating film composition, and forms a crosslinking structure with the resin to increase the degree of crosslinking. As such nitrogen-containing crosslinking agents, condensation products of urea and formaldehyde, condensation products of melamine and formaldehyde, methylol urea alkyl ethers obtained from alcohols, methylol melamine alkyl ethers and the like can be used. Preferably, the nitrogen-containing crosslinking agent including the alkanol group is a compound represented by the following formula (5), (6), (7), (8), (9), (10), (11), (12) It is good to use.

[Formula 5]

[Revision 21.01.2010 under Rule 26]

In Formula 5, R _1, R ₃ , and R ₅ are each independently —CH ₂ O (CH ₂ ) _n CH ₃ , n is an integer of 0 to 3, and R ₂ , R ₄ , and R ₆ are Each independently or simultaneously is a hydrogen atom, or m is an integer of 0 to 3 as-(CH ₂ ) OH or -CH ₂ O (CH ₂ ) mCH ₃ .

[Formula 6]

[Revision 21.01.2010 under Rule 26]

In Formula 6, R ₁ , R ₃ are each independently —CH ₂ O (CH ₂ ) nCH ₃ , n is an integer of 0 to 3, and R ₂ , R ₄ are each independently or simultaneously a hydrogen atom, or — (CH ₂ ) OH or -CH ₂ O (CH ₂ ) mCH ₃ , m is an integer from 0 to 3, R ₅ is an alkyl or phenyl group having 1 to 3 carbon atoms.)

[Formula 7]

[Formula 8]

[Formula 9]

[Formula 10]

[Formula 11]

[Formula 12]

In Chemical Formulas 7 to 12, each R is independently or simultaneously a hydrogen atom, or-(CH ₂ ) OH or -CH ₂ O (CH ₂ ) mCH ₃ as m is an integer of 0-3, at least one or more alkanes It's coming

The nitrogen-containing crosslinking agent containing the alkanol group of f) serves to improve adhesion to the substrate, and is preferably included in an amount of 0.5 to 10 parts by weight based on 100 parts by weight of the siloxane oligomer compound of a).

G) The surfactant may be polyoxyethylene octylphenyl ether, polyoxyethylene nonylphenyl ether, F171, F172, F173 (trade name: Japan Nippon Ink Company), FC430, FC431 (trade name: Sumitomo Trim Corporation), or KP341 (brand name) : Sinwol Chemical Co., Ltd.).

The surfactant is preferably contained in an amount of 0.0001 to 2 parts by weight based on 100 parts by weight of the siloxane oligomer compound of a), and when the content is within the above range, it is more preferable in improving the coating property and developability of the photosensitive composition.

The positive photosensitive organic-inorganic hybrid insulating film composition of the present invention as described above may be used after filtering with a Millipore filter of 0.1 to 0.2 μm with a solid content concentration of 10 to 50 wt%.

In another aspect, the present invention is a display device pattern forming method characterized in that using the positive photosensitive organic-inorganic hybrid insulating film composition and the cured body of the positive photosensitive organic-inorganic hybrid insulating film composition According to the present invention, a pattern forming method according to the present invention is a method of forming an insulating film pattern in a display process, except that a process other than using a photo process using the positive photosensitive organic-inorganic hybrid insulating film composition is performed. Of course, known methods can be applied.

As a specific example, a method of forming a pattern of a display device using the positive photosensitive organic-inorganic hybrid insulating film is as follows.

First, the positive photosensitive organic-inorganic hybrid insulating film of the present invention is applied to the surface of the substrate by spin coating, slit and spin coating, slit coating, roll coating, and the like, and the solvent is removed by prebaking to form a coating film. At this time, the prebaking is preferably carried out for 1 to 3 minutes at a temperature of 100 ~ 120 ℃.

Then, a predetermined pattern is formed by irradiating visible light, ultraviolet rays, far ultraviolet rays, electron beams, X-rays, and the like on the formed coating film according to a previously prepared pattern, and developing with a developer to remove unnecessary portions.

It is preferable to use an aqueous alkali solution for the developing solution. Specifically, inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, and primary amines such as n-propylamine and secondary amines such as diethylamine and n-propylamine Tertiary amines such as trimethylamine, methyldiethylamine, dimethylethylamine and triethylamine; alcohol amines such as dimethylethanolamine, methyldiethanolamine, and triethanolamine; tetramethylammonium hydroxide, tetraethylammonium hydroxide, and the like. The aqueous solution of the quaternary ammonium salt, etc. can be used. In this case, the developer is used by dissolving the alkaline compound at a concentration of 0.1 to 10 parts by weight, and may be added an appropriate amount of a water-soluble organic solvent and a surfactant such as methanol, ethanol and the like.

In addition, after developing with the developer as described above, it is washed with ultrapure water for 30 to 90 seconds to remove unnecessary parts and dried to form a pattern, and after irradiating the formed pattern with light such as ultraviolet rays, the pattern is applied to a heating apparatus such as an oven. By heat treatment at a temperature of 150 ~ 400 ℃ for 30 to 90 minutes to obtain a final pattern.

The pattern forming method of the display according to the present invention forms a double layer of a conventional SiNx Passivation / acrylic photosensitive organic insulating layer as a single layer by forming an insulating layer using a single photo process, resulting in process simplification and production cost reduction. In addition to excellent performance in sensitivity, resolution, process margin, transparency, and heat dissipation, it is possible to reduce power consumption by enabling a low dielectric constant insulating film, and to prevent shifts in afterimages, crosstalk, and threshold voltages. In addition, it is possible to secure excellent panel reliability by enabling low outgassing due to its excellent heat resistance. Through this, it can be usefully applied to not only passivation insulating film and gate insulating film but also flattening film in various displays.

Hereinafter, preferred examples are provided to help understanding of the present invention, but the following examples are merely to illustrate the present invention, and the scope of the present invention is not limited to the following examples.

Synthesis Example

Synthesis Example 1 (Preparation of siloxane oligomer compound (A))

55 parts by weight of phenyltriethoxysilane, 20 parts by weight of tetraethoxysilane, 25 parts by weight of triethoxysilane were added as reactive silane into a flask equipped with a cooling tube and a stirrer, and 100 parts by weight of ethanol was used as a solvent. After gentle stirring. 40 parts by weight of ultrapure water and 3 parts by weight of oxalic acid were added to the reaction solution, followed by gentle stirring. After 1 hour, the reaction solution was heated to 60 ° C. and maintained at this temperature for 10 hours. After polymerization, the solution was cooled to room temperature to terminate the reaction. In addition, by quenching below 0 ℃ to precipitate the reaction. In addition, after removing the synergistic solution containing the unreacted silane, the solvent and residual moisture of the alcohols produced during the reaction was removed through Vacume Drying. Finally, as a result of GPC analysis, a) siloxane oligomer compound having a polystyrene equivalent weight average molecular weight (MW) of 4000 was prepared.

Synthesis Example 2 (Preparation of siloxane oligomer compound (B))

55 parts by weight of phenyltriethoxysilane, 20 parts by weight of tetraethoxysilane, and 25 parts by weight of triethoxysilane were added to the flask equipped with a cooling tube and a stirrer as reactive silanes, followed by nitrogen replacement without adding a solvent, followed by gentle stirring. It was. 40 parts by weight of ultrapure water and 2 parts by weight of nitric acid were added to the reaction solution, followed by gentle stirring again. After 1 hour, the reaction solution was heated up to 60 ° C., maintained at this temperature for 10 hours, bulk polymerized, and cooled to room temperature to terminate the reaction. Further, quenching below 0 ° C. resulted in precipitation of the reactants. In addition, after removing the synergistic solution containing the unreacted silane, the solvent and residual moisture of the alcohols produced during the reaction was removed through Vacume Drying. Finally, as a result of GPC analysis, a solution of a) siloxane oligomer compound having a polystyrene equivalent weight average molecular weight (MW) of 8000 was prepared.

Synthesis Example 3 (Preparation of siloxane oligomer compound (C))

Except that in Synthesis Example 1, 60 parts by weight of diphenyldimethoxysilane, 20 parts by weight of tetraphenoxysilane, and 20 parts by weight of vinyltriethoxysilane were added as reactive silane into the flask equipped with a cooling tube and a stirrer. It carried out by the same method as Example 1. Finally, as a result of GPC analysis, a) siloxane oligomer compound having a polystyrene equivalent weight average molecular weight (MW) of 3000 was prepared.

Synthesis Example 4 (Preparation of siloxane oligomer compound (D))

Except that 50 parts by weight of triphenyl methoxysilane, 40 parts by weight of tetramethoxysilane, 10 parts by weight of glycidoxypropyl triethoxysilane as reactive silane in the flask equipped with a cooling tube and a stirrer in Synthesis Example 1 Was carried out in the same manner as in Synthesis example 1. Finally, as a result of GPC analysis, a) siloxane oligomer compound having a polystyrene reduced weight average molecular weight (MW) of 6000 was prepared.

Synthesis Example 5 (Preparation of siloxane oligomer compound (E))

Except that 50 parts by weight of triphenyl methoxysilane, 25 parts by weight of tetrabutoxysilane and 25 parts by weight of n-hexyltrimethoxysilane were added to the flask equipped with the cooling tube and the stirrer in Synthesis Example 1 as the reactive silane, respectively. It carried out in the same manner as in Synthesis example 1. Finally, as a result of GPC analysis, a) siloxane oligomer compound having a polystyrene reduced weight average molecular weight (MW) of 4000 was prepared.

Synthesis Example 6 (Preparation of siloxane oligomer compound (F))

Except that 50 parts by weight of triphenylmethoxysilane, 25 parts by weight of tetrabutoxysilane and 25 parts by weight of n-hexyltrimethoxysilane were added to the flask equipped with a cooling tube and a stirrer as the reactive silane in Synthesis Example 2, respectively. It carried out in the same manner as in Synthesis example 2. Finally, as a result of GPC analysis, a) siloxane oligomer compound having a polystyrene equivalent weight average molecular weight (MW) of 8000 was prepared.

Synthesis Example 7 (Preparation of siloxane oligomer compound (G))

Except that in Synthesis Example 2, 90 parts by weight of phenyltriethoxysilane, 5 parts by weight of tetraethoxysilane, and 5 parts by weight of n-hexyltrimethoxysilane were added as reactive silane into the flask equipped with a cooling tube and a stirrer. It carried out in the same manner as in Synthesis example 2. Finally, as a result of GPC analysis, a) siloxane oligomer compound having a polystyrene equivalent weight average molecular weight (MW) of 7000 was prepared.

Synthesis Example 8 (Preparation of siloxane oligomer compound (H))

Except that 50 parts by weight of phenyltriethoxysilane, 15 parts by weight of tetraethoxysilane and 35 parts by weight of n-hexyltrimethoxysilane were added to the flask equipped with the cooling tube and the stirrer in Synthesis Example 2 as the reactive silane, respectively. It carried out in the same manner as in Synthesis example 2. Finally, as a result of GPC analysis, a) siloxane oligomer compound having a polystyrene reduced weight average molecular weight (MW) of 10000 was prepared.

Synthesis Example 9 (Preparation of siloxane oligomer compound (I))

Synthesis Example 2 was carried out in the same manner as in Synthesis Example 2, except that 70 parts by weight of phenyltriethoxysilane and 30 parts by weight of tetraethoxysilane were added to the flask having the cooling tube and the stirrer as reactive silanes, respectively. Finally, as a result of GPC analysis, a) siloxane oligomer compound having a polystyrene reduced weight average molecular weight (MW) of 1500 was prepared.

Comparative Synthesis Example 1 (Preparation of siloxane oligomer compound (J))

Except that 40 parts by weight of phenyltriethoxysilane, 15 parts by weight of tetraethoxysilane and 45 parts by weight of n-hexyltrimethoxysilane were added to the flask equipped with a cooling tube and a stirrer in Synthesis Example 1 as the reactive silane, respectively. It carried out in the same manner as in Synthesis example 1. Finally, as a result of GPC analysis, a) siloxane oligomer compound having a polystyrene equivalent weight average molecular weight (MW) of 10000 was prepared.

Comparative Synthesis Example 2 (Preparation of siloxane oligomer compound (K))

Except that 95 parts by weight of phenyltriethoxysilane and 5 parts by weight of n-hexyltrimethoxysilane were added to the flask having the cooling tube and the stirrer in Synthesis Example 1 in the same manner as in Synthesis Example 1, respectively. Was carried out. Finally, as a result of GPC analysis, a) siloxane oligomer compound having a polystyrene reduced weight average molecular weight (MW) of 1000 was prepared.

Comparative Synthesis Example 3 (Preparation of siloxane oligomer compound (L))

Except that 20 parts by weight of phenyltriethoxysilane, 70 parts by weight of tetraethoxysilane and 10 parts by weight of n-hexyltrimethoxysilane were added as reactive silanes to the flask equipped with a cooling tube and a stirrer in Synthesis Example 2, respectively. It carried out in the same manner as in Synthesis example 2. Finally, as a result of GPC analysis, a) siloxane oligomer compound having a polystyrene reduced weight average molecular weight (MW) of 12000 was prepared.

Synthesis Example 10 (Preparation of 1,2-quinonediazide compound (A))

1 mol of a phenol compound represented by the following formula and 2 mol of 1,2-naphthoquinone diazide-5-sulfonic acid [chloride] are condensed to produce 1,2-naphthoquinone diazide-5 having an esterification degree of 67%. A sulfonic acid ester compound was prepared.

Synthesis Example 11 (Preparation of 1,2-quinonediazide compound (B))

1 mol of a phenol compound represented by the following formula and 2 mol of 1,2-naphthoquinone diazide-5-sulfonic acid [chloride] are condensed to produce 1,2-naphthoquinone diazide-5-sulfonic acid having an esterification degree of 67%. An ester compound was prepared.

Synthesis Example 12 (Preparation of 1,2-quinonediazide compound (C))

1 mol of a phenol compound represented by the following formula and 2 mol of 1,2-naphthoquinone diazide-5-sulfonic acid [chloride] are condensed to produce 1,2-naphthoquinone diazide-5- having an esterification degree of 67%. A sulfonic acid ester compound was prepared.

EXAMPLE

Example 1 (Preparation of positive type photosensitive organic-inorganic hybrid insulating film composition )

100 parts by weight of the siloxane oligomer compound (A) prepared in Synthesis Example 1, 25 parts by weight of 1,2-naphthoquinone diazide compound (A) prepared in Synthesis Example 10, and 15 parts by weight of dioctylphthalate as a plasticizer , Dissolved by mixing with propylene glycol methyl ether acetate so that the solid content is 20 parts by weight, and filtered with a 0.1 μm millipore filter to prepare a positive photosensitive organic-inorganic hybrid composition.

Example 2 (preparation of positive photosensitive organic-inorganic hybrid insulating film composition)

Except for using the siloxane oligomer compound (B) of Synthesis Example 2 instead of the siloxane oligomer compound (A) of Synthesis Example 1 in Example 1 was prepared in the same manner as in Example 1.

Example 3 (Preparation of Positive Photosensitive Organic-Inorganic Hybrid Insulating Film Composition)

Except for using the siloxane oligomer compound (C) of Synthesis Example 3 in place of the siloxane oligomer compound (A) of Synthesis Example 1 in Example 1 was prepared in the same manner as in Example 1.

Example 4 (Preparation of Positive Photosensitive Organic-Inorganic Hybrid Insulating Film Composition)

Except for using the siloxane oligomer compound (D) of Synthesis Example 4 in place of the siloxane oligomer compound (A) of Synthesis Example 1 in Example 1 was prepared in the same manner as in Example 1.

Example 5 (Preparation of positive type photosensitive organic-inorganic hybrid insulating film composition)

Except for using the siloxane oligomer compound (E) of Synthesis Example 5 in place of the siloxane oligomer compound (A) of Synthesis Example 1 in Example 1 was prepared in the same manner as in Example 1.

Example 6 (Preparation of positive type photosensitive organic-inorganic hybrid insulating film composition)

Except for using the siloxane oligomer compound (F) of Synthesis Example 6 in place of the siloxane oligomer compound (A) of Synthesis Example 1 in Example 1 was prepared in the same manner as in Example 1.

Example 7 (Preparation of positive type photosensitive organic-inorganic hybrid insulating film composition)

Except for using the siloxane oligomer compound (G) of Synthesis Example 7 in place of the siloxane oligomer compound (A) of Synthesis Example 1 in Example 1 was prepared in the same manner as in Example 1.

Example 8 (Preparation of positive type photosensitive organic-inorganic hybrid insulating film composition)

Except for using the siloxane oligomer compound (H) of Synthesis Example 8 in place of the siloxane oligomer compound (A) of Synthesis Example 1 in Example 1 was prepared in the same manner as in Example 1.

Example 9 (Preparation of positive type photosensitive organic-inorganic hybrid insulating film composition)

Except for using the siloxane oligomer compound (I) of Synthesis Example 9 in place of the siloxane oligomer compound (A) of Synthesis Example 1 in Example 1 was prepared in the same manner as in Example 1.

Example 10 (Preparation of positive type photosensitive organic-inorganic hybrid insulating film composition)

1,2-naphthoquinonediazide-5-sulfonic acid ester compound of Synthesis Example 11 in place of the 1,2-naphthoquinonediazide-5-sulfonic acid ester compound (A) of Synthesis Example 10 in Example 1 It was prepared in the same manner as in Example 1 except that B) was used.

Example 11 (Preparation of positive type photosensitive organic-inorganic hybrid insulating film composition)

1,2-naphthoquinone diazide-5-sulfonic acid ester compound of Synthesis Example 12 in place of the 1,2-naphthoquinone diazide-5-sulfonic acid ester compound (A) of Synthesis Example 10 in Example 1 It was prepared in the same manner as in Example 1 except that C) was used.

Example 12 (Preparation of positive type photosensitive organic-inorganic hybrid insulating film composition)

The photosensitive resin composition was manufactured by the same method as Example 1, except that dioctyl adipate was used instead of dioctylphthalate as a plasticizer when the photosensitive resin composition was prepared in Example 1.

Example 13 (Preparation of positive type photosensitive organic-inorganic hybrid insulating film composition)

In Example 1 except that 2,2,4-trimethyl-1,3-pentanediol monoisobutyrate was used in place of dioctylphthalate as a plasticizer in the preparation of the photosensitive resin composition, in the same manner as in Example 1. To prepare a photosensitive resin composition.

Example 14 (Preparation of positive type photosensitive organic-inorganic hybrid insulating film composition)

A photosensitive resin composition was prepared in the same manner as in Example 1, except that dioctylphthalate was not used as a plasticizer when preparing the photosensitive resin composition in Example 1.

Example 15 (Preparation of positive type photosensitive organic-inorganic hybrid insulating film composition)

A photosensitive resin composition was prepared in the same manner as in Example 1, except that diethylene glycol methylethyl ether was used instead of propylene glycol methyl ether acetate as a solvent when preparing the photosensitive resin composition in Example 1.

Comparative Example 1 (Preparation of positive type photosensitive organic-inorganic hybrid insulating film composition)

Except for using the siloxane oligomer compound (J) of Comparative Synthesis Example 1 in place of the siloxane oligomer compound (A) of Synthesis Example 1 in Example 1 was prepared in the same manner as in Example 1.

Comparative Example 2 (Preparation of Positive Photosensitive Organic-Inorganic Hybrid Insulating Film Composition)

Except for using the siloxane oligomer compound (K) of Comparative Synthesis Example 2 in place of the siloxane oligomer compound (A) of Synthesis Example 1 in Example 1 was prepared in the same manner as in Example 1.

Comparative Example 3 (Preparation of Positive Photosensitive Organic-Inorganic Hybrid Insulating Film Composition)

Except for using the siloxane oligomer compound (L) of Comparative Synthesis Example 3 in place of the siloxane oligomer compound (A) of Synthesis Example 1 in Example 1 was prepared in the same manner as in Example 1.

For Examples 1 to 15 and Comparative Examples 1 to 3, physical properties such as sensitivity, resolution, process margin, transmittance, heat discoloration resistance, insulation, and heat resistance were measured and shown in Table 1 below. After applying the positive photosensitive organic-inorganic hybrid insulating film composition prepared in Examples 1 to 15 and Comparative Examples 1 to 3 using a spin coater on a glass substrate, and free on a hot plate for 2 minutes at 100 ℃ It was baked to form a film having a thickness of 3.6 mu m.

A) Sensitivity-After irradiating UV light with 20 ㎽ / ㎠ intensity at 435 nm with a sensitivity of 10 ㎛ Line & Space 1: 1 CD, the film formed as above using a pattern mask. After developing for 1 minute at 23 degreeC with the aqueous solution of 2.38 weight% of tetramethyl ammonium hydroxide, it wash | cleaned for 1 minute with ultrapure water.

Then, the developed pattern was irradiated with 500 mJ / cm 2 of ultraviolet light having an intensity of 20 mA / cm 2 at 435 nm and cured at 230 ° C. for 60 minutes in an oven to obtain a pattern film having a thickness of 3.0 μm.

B) Resolution-Measured by the minimum size of the pattern film formed when the sensitivity of the a) is measured.

C) Process margin-A pattern film was formed in the same manner as in the above sensitivity measurement, but CD change rates before and after curing were measured based on 10 μm Line & Space 1: 1 CD. At this time, (circle) and the case where the change rate was 0 to 10%, (triangle | delta) and the case exceeding 20% were represented by (x).

D) Transparency-Transparency was evaluated for the transmittance of 400 nm of the patterned film using a spectrophotometer on the pattern film formed in the sensitivity measurement of a). (Circle) and the case where the transmittance | permeability at this time is 90% or more, (triangle | delta) and the case where it is 85 to 90%, and the case were represented by x.

E) Heat discoloration resistance-The heat discoloration resistance is determined by the 400 nm transmittance change of the pattern film before and after curing by curing for 40 minutes in an oven at 300 ° C in addition to the measurement substrate for evaluating the transparency of the above d). Evaluated. (Circle) and the case where the change rate at this time are less than 5%, (triangle | delta) and the case exceeding 10% were represented by x as the case where it was 5-10%.

F) Insulation-Insulation was determined based on the dielectric constant. The dielectric constant was obtained by measuring the capacitance of the capacitor and the following equation. The positive photosensitive organic-inorganic hybrid insulating film was formed in the same manner as in the above-described sensitivity measurement between the upper and lower metal electrodes patterned with gold of 1 cm2, and then formed into a MIM (Metal / Insulator / Metal) structure. The capacitance of the device was measured through an impedance analyzer, and the dielectric constant was calculated by the following equation.

C (capacitance) = ε ₀ (vacuum dielectric constant) * ε _r (dielectric dielectric constant) * A (effective area) / d (dielectric dielectric thickness)

The dielectric constant was measured, and the case of 2.5 to 2.8 was represented by ○, and the case of 2.8 to 3.2 was represented by △ and 3.2 or more.

G) Heat resistance-Heat resistance was measured using TGA. After sampling the pattern film formed during the sensitivity measurement of a), the temperature was raised by 10 ° C. per minute from room temperature to 900 ° C. using TGA. (Circle) and the case where 5 weight% Loss temperature is less than 300 degreeC as (circle) and the case where 5 weight% Loss temperature is 300-350 degreeC were shown by x.

Table 1

division	Sensitivity (mJ / cm 2 )	Resolution (um)	Process margin	Transmittance	Heat discoloration resistance	Insulation	Heat resistance
Example 1	100	2	○	○	○	○	○
Example 2	105	2	○	○	○	○	○
Example 3	102	2	○	○	○	○	○
Example 4	100	2	○	○	○	○	○
Example 5	99	2	○	○	○	○	○
Example 6	100	2	○	○	○	○	○
Example 7	103	2	○	○	○	○	○
Example 8	101	2	○	○	○	○	○
Example 9	103	2	○	○	○	○	○
Example 10	102	2	○	○	○	○	○
Example 11	100	2	○	○	○	○	○
Example 12	100	2	○	○	○	○	○
Example 13	104	2	○	○	○	○	○
Example 14	102	2	○	○	○	○	○
Example 15	101	2	○	○	○	○	○
Comparative Example 1	125	3	×	○	×	×	×
Comparative Example 2	128	3	×	○	×	×	×
Comparative Example 3	125	3	×	○	×	×	×

Through the Table 1, the positive photosensitive organic-inorganic hybrid insulating film composition prepared in Examples 1 to 15 according to the present invention was excellent in the performance, such as sensitivity, resolution, process margin, transparency, heat discoloration resistance, in particular insulation Compared with Comparative Examples 1 to 3, the power consumption can be reduced, and afterimage, crosstalk, and shift of threshold voltage can be eliminated. In addition, it was possible to secure excellent panel reliability by enabling low outgassing due to excellent heat resistance. It can be seen that a positive photosensitive organic-inorganic hybrid insulating film is applicable to various display processes.

The positive type photosensitive organic-inorganic hybrid insulating film composition according to the present invention can form a dual structure of a conventional SiNx Passivation / acrylic photosensitive organic insulating film as one layer, which can bring about process simplification and reduction of production cost. In addition to excellent performance margins, transparency, heat dissipation resistance, and the like, it is possible to lower the power consumption by enabling a low dielectric constant insulating film, and to eliminate afterimages, crosstalk, and shift of threshold voltage. By enabling low outgassing due to its excellent heat resistance, it is possible to secure excellent panel reliability. Through this, it can be usefully applied not only to passivation insulation film and gate insulation film but also to planarization film.

Claims (14)

1. a) i) a reactive silane comprising 1-3 phenyl groups represented by the following formula (1), ii) a polystyrene reduced weight average molecular weight (Mw) obtained by hydrolysis and condensation polymerization of a tetrafunctional reactive silane represented by the following formula (2) under a catalyst Siloxane oligomer compound having a C) of 1,000 to 2,0000; b) 1,2-quinonediazide compounds; And c) a solvent, wherein the positive photosensitive organic-inorganic hybrid insulating film composition comprises:

   [Formula 1]

   (R ₁ ) nSi (R ₂ ) _4-n

   In Formula 1, R ₁ is a phenyl group, R ₂ is each independently alkoxy group having 1 to 4 carbon atoms, phenoxy, or acetoxy, n is an integer of 1-3,

   [Formula 2]

   Si (R ₃ ) ₄

   R ₃ in Formula 2 are each independently an alkoxy group, phenoxy, or acetoxy group having 1 to 4 carbon atoms.
2. According to claim 1, a) 100 parts by weight of the siloxane oligomer compound; b) 5 to 50 parts by weight of the 1,2-quinonediazide compound; And, c) a solvent such that the solid content is 10-50% by weight.
3. The method according to claim 1, wherein the siloxane oligomer compound is a) i) 50-90 parts by weight of a reactive silane comprising 1-3 phenyl groups represented by Formula 1, ii) the tetrafunctional reactive silane represented by Formula 2 10 A positive photosensitive organic-inorganic hybrid insulating film composition, characterized in that -50 parts by weight is a siloxane oligomer compound obtained by hydrolysis and condensation polymerization under a catalyst.
4. The positive type photosensitive oil according to claim 1, wherein the siloxane oligomer compound of a) is iii) hydrolyzed and condensation-polymerized under a catalyst further comprising 10-50 parts by weight of a reactive silane represented by the following Chemical Formula 3. Inorganic hybrid insulation composition:

   [Formula 3]

   (R ₄ ) nSi (R ₅ ) _4-n

   In Formula 3, R ₄ is each independently an alkoxy group having 1 to ₄ carbon atoms, phenoxy, or acetoxy, and R ₅ is each independently hydrogen, an alkyl group having 1 to 10 carbon atoms, an aryl group, an epoxy group, vinyl, hexenyl Group, an acryl group, a methacryl group, or an allyl group, n is an integer of 1-3.
5. [Revision 21.01.2010 under Rule 26]
   The positive photosensitive organic-inorganic hybrid according to claim 1, wherein the b) 1,2-quinonediazide compound is obtained by reacting a phenol compound represented by the following formula (4) with a naphthoquinone diazide sulfonic acid halogen compound. Insulation layer composition: [Formula 4]

   

   In Formula 4, R ₁ to R ₆ are each independently hydrogen, halogen, an alkyl group having 1 to 4 carbon atoms, an alkenyl group or a hydroxyl group, and R ₇ and R ₈ are each independently hydrogen, a halogen or an alkyl group having 1 to 4 carbon atoms. R ₉ is hydrogen or an alkyl group having 1 to 4 carbon atoms.
6. The compound of claim 1, wherein the 1,2-quinonediazide compound of b) is 1,2-quinonediazide 4-sulfonic acid ester, 1,2-quinonediazide 5-sulfonic acid ester, and 1,2-quinonedia A positive photosensitive organic-inorganic hybrid insulating film composition, characterized in that at least one member is selected from the group consisting of a zide 6-sulfonic acid ester.
7. The method of claim 1, wherein the solvent of c) is methanol, ethanol, benzyl alcohol, hexyl alcohol, ethylene glycol methyl ether acetate, ethylene glycol ethyl ether acetate, ethylene glycol methyl ether propionate, ethylene glycol ethyl ether propionate, Ethylene glycol methyl ether, ethylene glycol ethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol methyl ethyl ether, propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, propylene Glycolpropyl ether acetate, propylene glycol methyl ether propionate, propylene glycol ethyl ether propionate, propylene glycol propyl ether propionate, propylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol Propylene ether, propylene glycol butyl ether, dipropylene glycol dimethyl ether, diporo ethylene glycol diethyl ether, butylene glycol monomethyl ether, butylene glycol monoethyl ether, dibutylene glycol dimethyl ether, and dibutylene glycol diethyl The positive type photosensitive organic-inorganic hybrid insulating film composition, characterized in that at least one selected from the group consisting of ethers.
8. The method of claim 1, wherein the positive photosensitive organic-inorganic hybrid insulating film composition is dioctylphthalate, diisononyl phthalate, dioctyl adipate, tricresyl phosphate, and 2,2,4-trimethyl-1,3-pentane A positive type photosensitive organic-inorganic hybrid insulating film composition, further comprising d) a plasticizer selected from the group consisting of diol monoisobutyrate.
9. The method of claim 1, wherein the positive photosensitive organic-inorganic hybrid insulating film composition comprises d) 5-20 parts by weight of a plasticizer, e) 0.5-10 parts by weight of an epoxy resin, f) an alkanol group represented by Formulas 5 to 11 A positive type photosensitive organic-inorganic hybrid insulating film composition, characterized in that it further comprises one or more additives selected from the group consisting of 0.5-10 parts by weight of the nitrogen-containing crosslinking agent, and h) 0.0001-2 parts by weight of the surfactant.
10. A pattern forming method of a display element, wherein the positive photosensitive organic-inorganic hybrid insulating film composition according to any one of claims 1 to 9 is used.
11. A display element comprising the cured product of the positive photosensitive organic-inorganic hybrid insulating film composition according to any one of claims 1 to 9.
12. The method of claim 11, wherein the positive photosensitive organic-inorganic hybrid insulating film composition is used as a passivation insulating film of a TFT-LCD, an OLED, or an O-TFT.
13. 12. The method of claim 11, wherein the positive photosensitive organic-inorganic hybrid insulating film composition is used as a gate insulating film of a TFT-LCD, an OLED, or an O-TFT.
14. 12. The method of claim 11, wherein the positive photosensitive organic-inorganic hybrid insulating film composition is used as a flattening film of a TFT-LCD, an OLED, or an O-TFT.