WO2010062127A3 - Nanoparticle assembly-based switching device - Google Patents

Nanoparticle assembly-based switching device Download PDF

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Publication number
WO2010062127A3
WO2010062127A3 PCT/KR2009/007026 KR2009007026W WO2010062127A3 WO 2010062127 A3 WO2010062127 A3 WO 2010062127A3 KR 2009007026 W KR2009007026 W KR 2009007026W WO 2010062127 A3 WO2010062127 A3 WO 2010062127A3
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WO
WIPO (PCT)
Prior art keywords
nanoparticles
switching device
present
based switching
nanoparticle assembly
Prior art date
Application number
PCT/KR2009/007026
Other languages
French (fr)
Other versions
WO2010062127A2 (en
Inventor
Tae Hee Kim
Jin Woo Cheon
Jung-Tak Jang
Original Assignee
Ewha University-Industry Collaboration Foundation
Industry-Academic Cooperation Foundation, Yonsei University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Ewha University-Industry Collaboration Foundation, Industry-Academic Cooperation Foundation, Yonsei University filed Critical Ewha University-Industry Collaboration Foundation
Publication of WO2010062127A2 publication Critical patent/WO2010062127A2/en
Publication of WO2010062127A3 publication Critical patent/WO2010062127A3/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
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    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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    • C01G23/053—Producing by wet processes, e.g. hydrolysing titanium salts
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    • C04B35/628—Coating the powders or the macroscopic reinforcing agents
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    • C04B35/632—Organic additives
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
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    • H01H1/02—Contacts characterised by the material thereof
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
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    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
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Abstract

The present invention relates to a switching device fabricated by using nanoparticles and a preparation method thereof. The present invention ensures the mass production of switching devices (e.g., memristor) by use of nanoparticles that exhibits reversible switching behavior at current of less than mA and at room temperature (25°C) 〧 250°C in a more convenient and economical manner. Predictions of the high potential of memristors based on nanoparticle assemblies are supported by the tremendous versatility to tune the electrical behavior of nanoparticles by controlling their nanoscale characteristics such as size, composition, dimension, surface area, and chemical potential.
PCT/KR2009/007026 2008-11-27 2009-11-27 Nanoparticle assembly-based switching device WO2010062127A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0118696 2008-11-27
KR20080118696 2008-11-27

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WO2010062127A2 WO2010062127A2 (en) 2010-06-03
WO2010062127A3 true WO2010062127A3 (en) 2010-08-19

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8385101B2 (en) 2010-07-30 2013-02-26 Hewlett-Packard Development Company, L.P. Memory resistor having plural different active materials
WO2012070020A1 (en) * 2010-11-26 2012-05-31 Varun Aggarwal Multi-state memory resistor device and methods for making thereof
EP2769413B1 (en) 2011-10-21 2016-04-27 Hewlett-Packard Development Company, L.P. Memristive element based on hetero-junction oxide
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