CN102931349A - Chip memristor and preparation method thereof - Google Patents
Chip memristor and preparation method thereof Download PDFInfo
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- CN102931349A CN102931349A CN2012104493418A CN201210449341A CN102931349A CN 102931349 A CN102931349 A CN 102931349A CN 2012104493418 A CN2012104493418 A CN 2012104493418A CN 201210449341 A CN201210449341 A CN 201210449341A CN 102931349 A CN102931349 A CN 102931349A
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- memristor
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- parallel
- conductive electrode
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Abstract
The invention belongs to the technical fields of a semiconductor and an electronic element, and particularly relates to a chip memristor and a preparation method of the chip memristor. The chip memristor comprises two parallel plate conductive electrodes; and the two parallel plate conductive electrodes are connected through an effective memristive functional dielectric material between the two parallel plate conductive electrodes to form a sandwich structure. The sandwich structure is prepared from the effective memristive functional dielectric material and the electrodes, and is coated by an insulating protective layer, then, an insulating material is filled in the gaps of the structure, and finally, the whole chip memristor is formed. The chip memristor is simple in preparation method and low in cost. A novel passive electronic element for the electronic field of an integrated circuit can be obtained. By the invention, the integrating property of a digital circuit can be improved, and light-weight trend, miniaturization and intelligentization of an electronic circuit product are promoted.
Description
Technical field
The invention belongs to semiconductor, technical field of electronic components, particularly a kind of chip memristor and preparation method thereof.
Background technology
The Leon Chua of University of California Berkeley professor proposed the concept of memristor in 1971, think that it is the 4th basic passive electric circuit element except resistance, electric capacity and inductance.As its name suggests, the resistance of memristor has dependence and record property to electric weight and the magnetic flux by it, and it recalls the resistance resistance by M (q)=d Φ/dq description, and namely the memristor resistance value is relevant with the time integral of the voltage and current that is carried in its two ends.Resistance makes memristor have broad application prospects in various fields such as circuit model theory, circuit devcie design, memory device, analog circuit, electronic devices and components and neural nets to the memory characteristic of time.
In addition, also to point out to recall the resistance behavior be ubiquitous phenomenon in the material system to Chua.Successfully prepared the TiO that is clipped in the platinum electrode centre in the laboratory that the Williams of Hewlett-Packard in 2008 leads
2Sandwich structure, this structure have obvious resistance conversion and recall the resistance behavior.Since then, memristor begins by extensive concern as the 4th basic passive electric circuit element.So far, a lot of material systems and structure all are proved has the inhibition effect of recalling, such as ZrO
2, Gd
2O
3, HfO
2, TiO
2, SiO
2, WO
x(0≤x≤3), CuO
y(0≤y≤1), TaO
z(0≤z≤2.5), VO
2, MFe
2O
4, Si, SrTiO
3-cN
d(0≤c≤3, d=2c/3), LiNbO
2And Nb
2O
5Modifier Deng a kind of or at least a material in the material).At present, memristor has become electronic circuit, information storage, material is synthetic and the study hotspot in the fields such as preparation, biological intelligence network.Yet the memristor of great majority report all is the thin-film device of realizing at nanoscale, and this helps microminiaturization, the low-power of circuit and device, and the semiconductor technology that also can develop nearly decades preferably is complementary.On the other hand, the widely used integrated circuit electrical equipment of our daily life can not be integrated by nano-device mutually, thereby develops a kind of chip memristor that can be used on macroscopical integrated circuit and have important practical value and market prospects.
Summary of the invention
The purpose of this invention is to provide a kind of chip memristor and preparation method thereof, can be as the 4th kind except resistance, electric capacity, inductance basic passive electric circuit element is realized the memory effect to resistance, its application comprises enriches existing circuit function, improve the integrated level of circuit product, and for the exploitation of new-type circuit electronic device provide new may.
A kind of chip memristor comprises two parallel-plate conductive electrodes, and two parallel-plate conductive electrodes link to each other by the resistance function medium material of effectively recalling between the two, form sandwich structure.
The material of described parallel-plate conductive electrode is Au, Pt, Cu, Ag or Ni metal and electrical conductivity alloy material thereof, or conductive carbon material, electro-conductive glass, conductive organic matter material.
Describedly effectively recall resistance function medium material (2) for ZrO
2, Gd
2O
3, HfO
2, TiO
2, SiO
2, WO
x(0≤x≤3), CuO
y(0≤y≤1), TaO
z(0≤z≤2.5), VO
2, MFe
2O
4, Si, SrTiO
3-cN
d(0≤c≤3, d=2c/3), LiNbO
2And Nb
2O
5In one or more.
Described MFe
2O
4Middle M is Mn, Fe, Co or Ni.
Around the chip memristor, coat one deck insulating material protective layer, and coat respectively one deck outsourcing conductive electrode in the upper and lower two parallel-plate conductive electrodes outside.
Described insulating material protective layer is one or more in polyvinyl chloride, polyethylene or the resin-insulated material; The material of described outsourcing conductive electrode is Au, Pt, Cu, Ag or Ni metal and electrical conductivity alloy material thereof, or conductive carbon material, electro-conductive glass, conductive organic matter material.
A plurality of parallel-plate conductive electrodes are effectively recalled resistance function medium material interval and are arranged and link to each other with a plurality of, the formation sandwich construction, and its upper and lower faces all is the parallel-plate conductive electrode; On two relative sides of sandwich construction, coat respectively one deck outsourcing conductive electrode, two adjacent flat andante conductive electrodes are continuous from different outsourcing conductive electrodes respectively; Coat one deck insulating material protective layer at 4 faces of sandwich construction residue; In the sandwich construction space, fill insulation filling material.
Described insulating material protective layer or insulation filling material are one or more in polyvinyl chloride, polyethylene or the resin-insulated material; The material of described outsourcing conductive electrode is Au, Pt, Cu, Ag or Ni metal and electrical conductivity alloy material thereof, or conductive carbon material, electro-conductive glass, conductive organic matter material.
A kind of preparation method of chip memristor is characterized in that, concrete steps are as follows:
A. choose and prepare effectively recalling of appropriate system and hinder the function medium material;
B. be prepared into sandwich structure with effectively recalling resistance function medium material and parallel-plate conductive electrode among the step a by methods such as coating, pressing mold, evaporation, sputter, depositions, wherein effectively recall the centre that resistance function medium material is positioned at the parallel-plate conductive electrode, obtain effective memristor structure.
C. the effective memristor structure coated insulation material protection layer by in step b, obtaining, and in the structure space, insert insulation filling material and obtain complete chip memristor.
Beneficial effect of the present invention is:
Manufacture method of the present invention is simple, and cost is low, can obtain a kind of novel passive electronic component that can be used in the integrated circuit electronic applications, can improve the integration of digital circuit, promotes lightness, Bao Xiaohua and the intellectuality of electronic circuit product.
Description of drawings
Fig. 1 is the functional core texture schematic diagram of chip memristor;
Fig. 2 is a kind of structural representation of chip memristor;
Fig. 3 is a kind of multilayer sheet type memristor cross section structure schematic diagram;
Fig. 4 is a kind of typical current/voltage of chip memristor (IV) curve;
Fig. 5 is another kind of typical current/voltage (IV) curve of chip memristor;
Number in the figure: 1-parallel-plate conductive electrode; 2-effectively recalls resistance function medium material; 3-insulating material protective layer; 4-outsourcing conductive electrode; The 5-insulation filling material.
Embodiment
The invention provides a kind of chip memristor and preparation method thereof, the present invention will be further described below in conjunction with the drawings and specific embodiments.
A kind of chip memristor comprises that two parallel-plate conductive electrodes, 1, two parallel-plate conductive electrode 1 links to each other by the resistance function medium material 2 of effectively recalling between the two, forms sandwich structure.
The material of described parallel-plate conductive electrode 1 is Au, Pt, Cu, Ag or Ni metal and electrical conductivity alloy material thereof, or conductive carbon material, electro-conductive glass, conductive organic matter material.
Describedly effectively recall resistance function medium material (2) for ZrO
2, Gd
2O
3, HfO
2, TiO
2, SiO
2, WO
x(0≤x≤3), CuO
y(0≤y≤1), TaO
z(0≤z≤2.5), VO
2, MFe
2O
4, Si, SrTiO
3-cN
d(0≤c≤3, d=2c/3), LiNbO
2And Nb
2O
5In one or more.
Described MFe
2O
4Middle M is Mn, Fe, Co or Ni.
Around the chip memristor, coat one deck insulating material protective layer 3, and coat respectively one deck outsourcing conductive electrode 4 in upper and lower two parallel-plate conductive electrodes 1 outside.
Described insulating material protective layer 3 is one or more in polyvinyl chloride, polyethylene or the resin-insulated material; The material of described outsourcing conductive electrode 4 is Au, Pt, Cu, Ag or Ni metal and electrical conductivity alloy material thereof, or conductive carbon material, electro-conductive glass, conductive organic matter material.
A plurality of parallel-plate conductive electrodes 1 are effectively recalled resistance function medium material 2 and are spaced and link to each other with a plurality of, the formation sandwich construction, and its upper and lower faces all is parallel-plate conductive electrode 1; On two relative sides of sandwich construction, coat respectively 4, two adjacent flat andantes of one deck outsourcing conductive electrode conductive electrode 1 continuous from different outsourcing conductive electrodes 4 respectively; Coat one deck insulating material protective layer 3 at 4 faces of sandwich construction residue; In the sandwich construction space, fill insulation filling material 5.
Described insulating material protective layer 3 or insulation filling material 5 are one or more in polyvinyl chloride, polyethylene or the resin-insulated material; The material of described outsourcing conductive electrode 4 is Au, Pt, Cu, Ag or Ni metal and electrical conductivity alloy material thereof, or conductive carbon material, electro-conductive glass, conductive organic matter material.
As shown in Figure 1, the present invention proposes the core texture that the chip memristor has a kind of shape such as sandwich and comprise: effectively recall resistance function medium material 2, the parallel-plate conductive electrode 1 that is clipped in its two ends forms.Wherein effectively recalling the resistance medium is to have the functional material of recalling inhibition effect, by ZrO
2, Gd
2O
3, HfO
2, TiO
2, SiO
2, WO
x(0≤x≤3), CuO
y(0≤y≤1), TaO
z(0≤z≤2.5), VO
2, MFe
2O
4, Si, SrTiO
3-cN
d(0≤c≤3, d=2c/3), LiNbO
2And Nb
2O
5Form behind doping vario-property Deng a kind of or at least a material in the material.Electrode is by Au, Pt, and Cu, Ag, the metal materials such as Ni are made.
The described chip memristor of the present embodiment is individual layer chip memristor, and namely memristor only comprises individual layer and effectively recalls resistance function medium material 2.Individual layer chip memristor is simple in structure, and is easy to process, and stable performance is easy to use, can participate in well the structure of integrated circuit, can improve its functional and integration.
As shown in Figure 2, individual layer chip memristor adds insulating material protective layer 3 by core texture process as shown in fig. 1, makes after the operations such as outsourcing conductive electrode 4.Wherein effectively recall resistance function medium material 2 and can pass through the material preparation means acquisitions such as chemical reaction, pressing mold, sintering, little processing, parallel-plate conductive electrode 1 and outsourcing conductive electrode 4 can be added through methods such as coating, pressing mold, evaporation, sputter, depositions by the respective electrode material.
The described chip memristor of the present embodiment is the multilayer sheet type memristor, be that memristor inside comprises multi-layer flat andante conductive electrode 1, accompany between every two-layer parallel-plate conductive electrode 1 and effectively recall resistance function medium material 2, in the space of effectively recalling resistance function medium material 2 and parallel-plate conductive electrode 1, fill insulation filling material 5, around the multilayer sheet type memristor, carry out at last insulating wrapped, and can make the multilayer sheet type memristor after adding outsourcing conductive electrode 4.
Fig. 3 has provided a kind of cross section structure schematic diagram of multilayer sheet type memristor; as seen multilayer sheet type memristor funtion part is recalled the resistance structure by the core shown in a plurality of Fig. 1 parallel to each other and is formed among Fig. 3; after adding outsourcing conductive electrode 4 and insulating material protective layer 3, form the multilayer sheet type memristor of a plurality of individual layer memristor parallel connection.
The chip memristor that success is made should have the Circuit responce of shape such as Fig. 4 and Fig. 5.Chip memristor initial resistance state is high resistance state among Fig. 4, and experience to low-resistance conversion, and is kept this kind resistance states by high resistance in the process that voltage rises, and just finishes by low resistance to high-resistance replacement until apply reverse threshold voltage.Opposite with Fig. 4, provided a kind of chip memristor Circuit responce result schematic diagram of low initial resistance state among Fig. 5.Because memristor depends on material and the structure of effectively recalling the resistance medium shown in Fig. 1 to the response of external circuit, thereby the Circuit responce that can externally present is not limited to Fig. 4 and shown in Figure 5, all device resistance appearance transformations in the circuit loading procedure, and the unidirectional or two-way phenomenon that is kept of energy, all can think to recall the resistance behavior.
Claims (9)
1. chip memristor is characterized in that: comprise two parallel-plate conductive electrodes (1), two parallel-plate conductive electrodes (1) link to each other by the resistance function medium material (2) effectively recalled between the two, form sandwich structure.
2. a kind of chip memristor according to claim 1, it is characterized in that: the material of described parallel-plate conductive electrode (1) is Au, Pt, Cu, Ag or Ni metal and electrical conductivity alloy material thereof, or conductive carbon material, electro-conductive glass, conductive organic matter material.
3. a kind of chip memristor according to claim 1 is characterized in that: describedly effectively recall resistance function medium material (2) and be ZrO
2, Gd
2O
3, HfO
2, TiO
2, SiO
2, WO
x(0≤x≤3), CuO
y(0≤y≤1), TaO
z(0≤z≤2.5), VO
2, MFe
2O
4, Si, SrTiO
3-cN
d(0≤c≤3, d=2c/3), LiNbO
2And Nb
2O
5In one or more.
4. a kind of chip memristor according to claim 3 is characterized in that: described MFe
2O
4Middle M is Mn, Fe, Co or Ni.
5. a kind of chip memristor according to claim 1 is characterized in that: coat one deck insulating material protective layer (3) around the chip memristor, and coat respectively one deck outsourcing conductive electrode (4) in upper and lower two parallel-plate conductive electrodes (1) outside.
6. a kind of chip memristor according to claim 5 is characterized in that: described insulating material protective layer (3) is in polyvinyl chloride, polyethylene or the resin-insulated material one or more; The material of described outsourcing conductive electrode (4) is Au, Pt, Cu, Ag or Ni metal and electrical conductivity alloy material thereof, or conductive carbon material, electro-conductive glass, conductive organic matter material.
7. a kind of chip memristor according to claim 1, it is characterized in that: a plurality of parallel-plate conductive electrodes (1) are effectively recalled resistance function medium material (2) and are spaced and link to each other with a plurality of, form sandwich construction, its upper and lower faces all is parallel-plate conductive electrode (1); On two relative sides of sandwich construction, coat respectively one deck outsourcing conductive electrode (4), two adjacent flat andante conductive electrodes (1) are continuous from different outsourcing conductive electrodes (4) respectively; Coat one deck insulating material protective layer (3) at 4 faces of sandwich construction residue; In the sandwich construction space, fill insulation filling material (5).
8. a kind of chip memristor according to claim 7 is characterized in that: described insulating material protective layer (3) or insulation filling material (5) are in polyvinyl chloride, polyethylene or the resin-insulated material one or more; The material of described outsourcing conductive electrode (4) is Au, Pt, Cu, Ag or Ni metal and electrical conductivity alloy material thereof, or conductive carbon material, electro-conductive glass, conductive organic matter material.
9. the preparation method such as the described chip memristor of the arbitrary claim of claim 1 ~ 8 is characterized in that, concrete steps are as follows:
A. choose and prepare effectively recalling of appropriate system and hinder the function medium material;
B. be prepared into sandwich structure with effectively recalling resistance function medium material and parallel-plate conductive electrode among the step a by methods such as coating, pressing mold, evaporation, sputter, depositions, wherein effectively recall the centre that resistance function medium material is positioned at the parallel-plate conductive electrode, obtain effective memristor structure.
C. the effective memristor structure coated insulation material protection layer by in step b, obtaining, and in the structure space, insert insulation filling material and obtain complete chip memristor.
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| CN107155374A (en) * | 2014-09-30 | 2017-09-12 | 惠普发展公司，有限责任合伙企业 | Memristor with oxide switchable layer |
| CN109476999A (en) * | 2016-07-07 | 2019-03-15 | 默克专利股份有限公司 | Electronics switching element |
| WO2021003683A1 (en) * | 2019-07-10 | 2021-01-14 | 中国科学院化学研究所 | Silicon oxide-based memristor based on solution method, and preparation method and application thereof |
| CN113675294A (en) * | 2021-08-20 | 2021-11-19 | 电子科技大学 | Photoelectric synapse device of double-layer ternary oxide and preparation and working methods thereof |
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| CN113675294A (en) * | 2021-08-20 | 2021-11-19 | 电子科技大学 | Photoelectric synapse device of double-layer ternary oxide and preparation and working methods thereof |
| CN113675294B (en) * | 2021-08-20 | 2023-03-31 | 电子科技大学 | Photoelectric synapse device of double-layer ternary oxide and preparation and working methods thereof |
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Application publication date: 20130213 |