WO2010053338A2 - 금속 산화물 반도체 나노 입자 형성 방법, 이 나노 입자를 사용한 고분자 발 광 소자 및 그 제조 방법 - Google Patents

금속 산화물 반도체 나노 입자 형성 방법, 이 나노 입자를 사용한 고분자 발 광 소자 및 그 제조 방법 Download PDF

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Publication number
WO2010053338A2
WO2010053338A2 PCT/KR2009/006591 KR2009006591W WO2010053338A2 WO 2010053338 A2 WO2010053338 A2 WO 2010053338A2 KR 2009006591 W KR2009006591 W KR 2009006591W WO 2010053338 A2 WO2010053338 A2 WO 2010053338A2
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WO
WIPO (PCT)
Prior art keywords
nanoparticles
metal oxide
light
polymer
formation
Prior art date
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Ceased
Application number
PCT/KR2009/006591
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English (en)
French (fr)
Other versions
WO2010053338A3 (ko
Inventor
김태환
손동익
유찬호
정재훈
추동철
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Industry University Cooperation Foundation IUCF HYU
Industry University Cooperation Foundation of Sogang University
Original Assignee
Industry University Cooperation Foundation IUCF HYU
Industry University Cooperation Foundation of Sogang University
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Publication date
Application filed by Industry University Cooperation Foundation IUCF HYU, Industry University Cooperation Foundation of Sogang University filed Critical Industry University Cooperation Foundation IUCF HYU
Publication of WO2010053338A2 publication Critical patent/WO2010053338A2/ko
Publication of WO2010053338A3 publication Critical patent/WO2010053338A3/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/20—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • H10K85/146—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE poly N-vinylcarbazol; Derivatives thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

금속 산화물 반도체 나노 입자 형성 방법, 이 나노 입자를 사용한 고분자 발 광 소자 및 그 제조 방법을 제공한다. 본 발명에 따른 나노 입자 형성 방법에서는 원료 금속염을 용매에 용해시켜 혼합용액을 제조한 다음, 상기 혼합용액을 가열한 후 냉각시키는 과정에서 상기 혼합용액 내에 금속 산화물 나노 입자를 형성한다. 본 발명에 따른 고분자 발광 소자는, 기판, 상기 기판 상에 형성된 제1 전극, 상기 제1 전극 상에 형성되고 전도성 고분자와 절연성 고분자의 혼합 단층 고분자 박막 내의 금속 산화물 나노 입자로 구성된 발광층, 및 상기 발광층 상에 형성된 제2 전 극을 포함한다.
PCT/KR2009/006591 2008-11-10 2009-11-10 금속 산화물 반도체 나노 입자 형성 방법, 이 나노 입자를 사용한 고분자 발 광 소자 및 그 제조 방법 Ceased WO2010053338A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0110771 2008-11-10
KR1020080110771A KR101139927B1 (ko) 2008-11-10 2008-11-10 금속 산화물 반도체 나노 입자 형성 방법, 이 나노 입자를 사용한 고분자 발광 소자 및 그 제조 방법

Publications (2)

Publication Number Publication Date
WO2010053338A2 true WO2010053338A2 (ko) 2010-05-14
WO2010053338A3 WO2010053338A3 (ko) 2010-08-05

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/006591 Ceased WO2010053338A2 (ko) 2008-11-10 2009-11-10 금속 산화물 반도체 나노 입자 형성 방법, 이 나노 입자를 사용한 고분자 발 광 소자 및 그 제조 방법

Country Status (2)

Country Link
KR (1) KR101139927B1 (ko)
WO (1) WO2010053338A2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12486448B2 (en) * 2020-09-11 2025-12-02 Industry-Academic Cooperation Foundation, Yonsei University Perovskite compound-based electroluminescent layer and light emitting device comprising same

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101619438B1 (ko) * 2013-06-14 2016-05-10 주식회사 엘지화학 금속 나노플레이트, 이의 제조 방법, 이를 포함하는 도전성 잉크 조성물 및 전도성 필름
US12364152B2 (en) 2019-04-03 2025-07-15 Osong Medical Innovation Foundation Method for manufacturing conductive polymer electrode by using drop casting

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2839506B1 (fr) * 2002-05-10 2005-06-10 Michelle Paparone Serole Oxyde mixte d'indium etain dit ito a grande conductivite electrique a nanostructure
US7482382B2 (en) * 2004-05-19 2009-01-27 The Texas A&M University System Process for preparing nano-sized metal oxide particles
KR100710458B1 (ko) 2005-11-11 2007-04-24 한양대학교 산학협력단 고분자 박막 내에 형성된 나노 입자를 이용한 전계 발광소자 제작 방법 및 그 방법에 의해 제작된 전계 발광소자와 그 구동 방법
KR100928305B1 (ko) * 2007-12-06 2009-11-25 한양대학교 산학협력단 금속 산화물 나노 입자의 형성 방법 및 금속 산화물 나노입자가 분포된 발광층을 포함하는 발광 소자 및 그 발광소자 제작 방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12486448B2 (en) * 2020-09-11 2025-12-02 Industry-Academic Cooperation Foundation, Yonsei University Perovskite compound-based electroluminescent layer and light emitting device comprising same

Also Published As

Publication number Publication date
KR101139927B1 (ko) 2012-04-30
KR20100051946A (ko) 2010-05-19
WO2010053338A3 (ko) 2010-08-05

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