WO2010040100A3 - Procédés de préparation de nanocristaux reposant sur l'utilisation d'agents de transfert d'électrons - Google Patents

Procédés de préparation de nanocristaux reposant sur l'utilisation d'agents de transfert d'électrons Download PDF

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Publication number
WO2010040100A3
WO2010040100A3 PCT/US2009/059441 US2009059441W WO2010040100A3 WO 2010040100 A3 WO2010040100 A3 WO 2010040100A3 US 2009059441 W US2009059441 W US 2009059441W WO 2010040100 A3 WO2010040100 A3 WO 2010040100A3
Authority
WO
WIPO (PCT)
Prior art keywords
methods
electron transfer
transfer agents
preparing nanocrystals
nanocrystals
Prior art date
Application number
PCT/US2009/059441
Other languages
English (en)
Other versions
WO2010040100A2 (fr
Inventor
Eric Tulsky
Joseph Bartel
Joseph Treadway
Original Assignee
Life Technologies Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Life Technologies Corporation filed Critical Life Technologies Corporation
Priority to CN200980148625.XA priority Critical patent/CN102239107B/zh
Publication of WO2010040100A2 publication Critical patent/WO2010040100A2/fr
Publication of WO2010040100A3 publication Critical patent/WO2010040100A3/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/84—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/80—Particles consisting of a mixture of two or more inorganic phases

Abstract

L'invention concerne des compositions et des procédés de préparation de nanocristaux à noyau/coque, reposant sur l'utilisation de précurseurs non appariés et d'au moins deux agents de transfert d'électrons, pour commander, de manière indépendante, les phases de nucléation et de croissance d'une formation de particules.
PCT/US2009/059441 2008-10-03 2009-10-02 Procédés de préparation de nanocristaux reposant sur l'utilisation d'agents de transfert d'électrons WO2010040100A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN200980148625.XA CN102239107B (zh) 2008-10-03 2009-10-02 使用电子转移剂制备纳米晶的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10258908P 2008-10-03 2008-10-03
US61/102,589 2008-10-03

Publications (2)

Publication Number Publication Date
WO2010040100A2 WO2010040100A2 (fr) 2010-04-08
WO2010040100A3 true WO2010040100A3 (fr) 2010-07-01

Family

ID=42074244

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/059441 WO2010040100A2 (fr) 2008-10-03 2009-10-02 Procédés de préparation de nanocristaux reposant sur l'utilisation d'agents de transfert d'électrons

Country Status (3)

Country Link
KR (1) KR101562689B1 (fr)
CN (1) CN102239107B (fr)
WO (1) WO2010040100A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110078114B (zh) * 2019-05-16 2021-06-18 苏州大学 具有局域表面等离子体共振吸收的金属氧化物纳米晶及其制备方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014152883A1 (fr) * 2013-03-14 2014-09-25 Liquid Light Inc. Procédé de synthèse de nanoparticules d'indium de taille inférieure à 100 nm
WO2015017478A2 (fr) 2013-07-29 2015-02-05 US Nano LLC Synthèse de nanofils semi-conducteur cœur/enveloppe cdse/zns
US9306110B2 (en) 2013-07-31 2016-04-05 US Nano LLC Apparatus and methods for continuous flow synthesis of semiconductor nanowires
CN106010499B (zh) * 2016-05-18 2020-06-12 浙江大学 核壳量子点的表面优化方法
EP3511393B1 (fr) 2018-01-11 2021-04-28 Samsung Electronics Co., Ltd. Population de points quantiques, methode de production et composition la comprenant
KR20200122717A (ko) 2019-04-18 2020-10-28 삼성전자주식회사 리튬 함유 무카드뮴 양자점, 그 제조 방법, 및 이를 포함하는 전자 소자
KR102652436B1 (ko) 2019-04-18 2024-03-27 삼성전자주식회사 ZnTeSe 기반의 양자점
KR20200122719A (ko) 2019-04-18 2020-10-28 삼성전자주식회사 코어쉘 양자점, 그 제조 방법, 및 이를 포함하는 전자 소자
EP3985083A1 (fr) 2020-10-16 2022-04-20 Samsung Electronics Co., Ltd. Points quantiques et dispositifs les comprenant
KR102640222B1 (ko) * 2020-11-26 2024-02-23 성균관대학교산학협력단 양자점 및 이의 제조방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6225198B1 (en) * 2000-02-04 2001-05-01 The Regents Of The University Of California Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process
US6306736B1 (en) * 2000-02-04 2001-10-23 The Regents Of The University Of California Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process
US20030097976A1 (en) * 2001-10-02 2003-05-29 Zehnder Donald A. Method of semiconductor nanoparticle synthesis
US20050214536A1 (en) * 2003-12-12 2005-09-29 Quantum Dot Corporation Preparation of stable, bright luminescent nanoparticles having compositionally engineered properties

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100657891B1 (ko) * 2003-07-19 2006-12-14 삼성전자주식회사 반도체 나노결정 및 그 제조방법
JP2010502540A (ja) * 2006-09-04 2010-01-28 ビクトリア リンク リミティド ナノ粒子の作成方法
CN101082138A (zh) * 2007-03-28 2007-12-05 吉林大学 合成CdTe半导体荧光纳米晶体材料的方法及其合成系统

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6225198B1 (en) * 2000-02-04 2001-05-01 The Regents Of The University Of California Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process
US6306736B1 (en) * 2000-02-04 2001-10-23 The Regents Of The University Of California Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process
US20030097976A1 (en) * 2001-10-02 2003-05-29 Zehnder Donald A. Method of semiconductor nanoparticle synthesis
US20050214536A1 (en) * 2003-12-12 2005-09-29 Quantum Dot Corporation Preparation of stable, bright luminescent nanoparticles having compositionally engineered properties

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110078114B (zh) * 2019-05-16 2021-06-18 苏州大学 具有局域表面等离子体共振吸收的金属氧化物纳米晶及其制备方法

Also Published As

Publication number Publication date
CN102239107A (zh) 2011-11-09
CN102239107B (zh) 2016-11-16
KR101562689B1 (ko) 2015-10-22
KR20110069836A (ko) 2011-06-23
WO2010040100A2 (fr) 2010-04-08

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