WO2010038780A1

WO2010038780A1 - Exposure apparatus, supporting apparatus, and device manufacturing method

Info

Publication number: WO2010038780A1
Application number: PCT/JP2009/067033
Authority: WO
Inventors: 敏正下田; 宏行川又; 正崇立花
Original assignee: 株式会社ニコン
Priority date: 2008-09-30
Filing date: 2009-09-30
Publication date: 2010-04-08

Abstract

An exposure apparatus (11) is provided with an exposure apparatus main body (15) and a supporting apparatus (14). The exposure apparatus main body (15) has an illuminating optical system (17) which guides exposure light (EL) emitted from a light source device (12) to a reticle, and a projection optical system (19) which projects the image of a predetermined pattern on a wafer. The supporting apparatus (14) is arranged below the exposure apparatus main body (15) and supports the exposure apparatus main body (15). The supporting apparatus (14) is provided with a supporting table (51) which supports the exposure apparatus main body (15) from below. In the supporting table (51), a turbo-molecular pump (63) which depressurizes inside the exposure apparatus main body (15) is stored.

Description

Exposure apparatus, support apparatus, and device manufacturing method

The present invention relates to an exposure apparatus that performs lithography processing and a device manufacturing method using the exposure apparatus. The present invention also relates to a support device that supports an exposure apparatus main body that performs lithography processing.

Generally, an exposure apparatus for manufacturing a micro device such as a semiconductor integrated circuit includes an illumination optical system and a projection optical system. The illumination optical system irradiates exposure light onto a mask such as a reticle on which a predetermined pattern is formed. The projection optical system projects an image of a mask pattern irradiated with exposure light onto a substrate such as a wafer or glass plate coated with a photosensitive material. In such an exposure apparatus, it is desired to further increase the resolution of the projection optical system in order to achieve high integration of semiconductor integrated circuits and miniaturization of pattern images. For this reason, the exposure light used in the exposure apparatus has been shortened in wavelength, and an exposure apparatus using EUV (Extreme Ultraviolet) light or EB (Electron Beam) as exposure light has been developed (for example, see Patent Document 1).

In such an exposure apparatus, the exposure light used has a very short wavelength. Therefore, the exposure apparatus main body includes a chamber having an internal space set in a vacuum atmosphere. An illumination optical system, a reticle stage that holds a reticle, a projection optical system, and a wafer stage that holds a wafer are disposed in the chamber.

Japanese Patent Laid-Open No. 11-243052

By the way, in an exposure apparatus using EUV light or EB as exposure light, a vacuum exhaust apparatus for reducing the pressure in the optical path of the exposure light or in the chamber is generally installed on the side wall of the chamber, that is, the exposure apparatus main body. . However, on the side wall of the exposure apparatus main body, electrical wiring for various apparatuses in the exposure apparatus, cooling piping for various optical elements, and the like are provided. For this reason, installation space such as electrical wiring and cooling piping is required, and therefore the size and number of vacuum exhaust devices installed on the side wall of the exposure apparatus main body are limited. Therefore, since a large evacuation apparatus or a plurality of evacuation apparatuses cannot be used, it takes a considerable time to reduce the pressure in the optical path of the exposure light or the chamber to a desired pressure.

An object of the present invention is to provide an exposure apparatus, a support apparatus, and a device manufacturing method that can quickly depressurize the optical path of light in the exposure apparatus main body.

In order to solve the above-described problems, the present invention employs the following configuration corresponding to FIGS. 1 to 7 shown in the embodiment.
In order to solve the above problems, according to the first aspect of the present invention, an illumination optical system (17) capable of illuminating the first surface (23a) with light (EL) emitted from the light source unit (44), And an exposure apparatus body (15) having a projection optical system (19) capable of projecting an image of a predetermined pattern onto a second surface (30a) different from the first surface (23a), and the exposure apparatus body (15 ) From below and a vacuum evacuation section (below the exposure apparatus main body (15)) for reducing the pressure in the optical path of the light (EL) in the exposure apparatus main body (15). 63, 79) is provided.

According to the above configuration, the exposure apparatus main body is supported by the support base disposed below the exposure apparatus main body. The light path in the exposure apparatus main body is depressurized by a vacuum exhaust unit disposed below the exposure apparatus main body. Thus, unlike the case where the vacuum exhaust unit is arranged on the side wall of the exposure apparatus main body where various pipes and various electrical wirings are installed, the size and number of the vacuum exhaust units are not limited. Therefore, it is possible to quickly depressurize the light path in the exposure apparatus main body.

In order to solve the above-mentioned problem, according to a second aspect of the present invention, the exposure apparatus is mounted on an exposure apparatus (11) having an exposure apparatus body (15) having an internal space adjusted to be lower than atmospheric pressure, In a support device (14) for supporting the exposure apparatus main body (15) from below, a support base (51) having a support surface (50) for supporting the exposure apparatus main body (15), and in the exposure apparatus main body (15) An evacuation part (63) for reducing pressure, a communication passage (62) formed in the support (51) and communicating the exposure apparatus main body (15) and the evacuation part (63), A support device is provided that includes a vibration attenuating portion (70) disposed in the communication path (62) and attenuating vibration generated based on the driving of the evacuation portion (63).

According to the above configuration, the exposure apparatus main body is supported by the support base of the support apparatus disposed below the exposure apparatus main body. The inside of the exposure apparatus main body is depressurized by a vacuum exhaust part of the support device. Thus, unlike the case where the vacuum exhaust unit is arranged on the side wall of the exposure apparatus main body where various pipes and various electrical wirings are installed, the size and number of the vacuum exhaust units are not limited. Therefore, the inside of the exposure apparatus main body can be quickly depressurized.

In addition, in order to explain the present invention in an easy-to-understand manner, the description has been made in association with the reference numerals of the drawings showing the embodiments, but it goes without saying that the present invention is not limited to the embodiments.

The schematic diagram which shows the exposure apparatus in this embodiment. The sectional side view which shows typically the internal structure of a support apparatus. Schematic which shows the structure of a light source device. The side sectional view showing typically the composition of a turbo molecular pump. The sectional side view which shows the structure of a communicating member typically. The flowchart which shows the manufacturing process of a device. 6 is a flowchart for explaining substrate processing of a semiconductor device.

Hereinafter, an embodiment embodying the present invention will be described with reference to FIGS.
As shown in FIG. 1, the exposure apparatus 11 is an EUV exposure apparatus that uses extreme ultraviolet light, ie, EUV (Extreme Ultraviolet) light, which is a soft X-ray region having a wavelength of about 100 nm or less, as exposure light EL. The exposure light EL is emitted from the light source device 12. The exposure apparatus 11 includes a support device 14, an exposure apparatus main body 15, and a control apparatus 100. The support device 14 is fixed on the floor 13 of the floor on which the exposure device 11 is installed. The exposure apparatus main body 15 is disposed above the support apparatus 14. The control device 100 controls the support device 14 and the exposure apparatus main body 15. The exposure apparatus main body 15 includes a first chamber 16. The internal space of the first chamber 16 is set to a vacuum atmosphere having a lower pressure than the atmosphere. In the first chamber 16, a reflective reticle R on which a predetermined pattern is formed, and a wafer W having a surface coated with a photosensitive material such as a resist are installed.

The exposure light EL is incident from the light source device 12 into the first chamber 16. The exposure light EL emitted from the light source device 12 is guided to the reticle R held on the reticle stage 18 via the illumination optical system 17 disposed in the first chamber 16. Then, the exposure light EL reflected by the reticle R is guided to the wafer W held on the wafer stage 20 via the projection optical system 19 arranged in the first chamber 16.

The illumination optical system 17 includes a housing 21 having an internal space set in a vacuum atmosphere, like the first chamber 16. A plurality of reflecting mirrors (not shown) that can reflect the exposure light EL that has entered the casing 21 from the light source device 12 are provided in the casing 21. The exposure light EL is sequentially reflected by the respective reflecting mirrors, and then enters the folding reflecting mirror 22 installed in a lens barrel 25 described later. The exposure light EL is reflected by the reflecting mirror 22 and then guided to the reticle R held on the reticle stage 18. A reflection layer is formed on each reflection surface of each reflection mirror (including the reflection mirror 22 for turning back) that constitutes the illumination optical system 17. The reflective layer is a multilayer film in which molybdenum (Mo) and silicon (Si) are alternately stacked.

The reticle stage 18 is disposed on the object plane side of the projection optical system 19 (above shown in FIG. 1). The reticle stage 18 includes an electrostatic chuck 23, a reticle stage driving unit (not shown), and a support stage 24 that supports the electrostatic chuck 23. The electrostatic chuck 23 has an attracting surface 23 a that electrostatically attracts the reticle R. The reticle stage drive unit moves the reticle R with a predetermined stroke in the Y-axis direction (left-right direction in FIG. 1). The reticle stage drive unit also moves the reticle R in the X-axis direction (direction orthogonal to the paper surface in FIG. 1) and the θz direction (rotation direction around the Z-axis). When the exposure light EL is illuminated onto the pattern surface Ra of the reticle R, an illumination region extending in the X-axis direction is formed on a part of the pattern surface Ra.

The projection optical system 19 reduces the image of the pattern formed by illuminating the pattern surface Ra of the reticle R with the exposure light EL to a predetermined reduction magnification (for example, 1/4 times). Similar to the first chamber 16, the projection optical system 19 includes a lens barrel 25 having an internal space set in a vacuum atmosphere. A flange portion 26 is provided at an intermediate position of the lens barrel 25 in the Z-axis direction (vertical direction in FIGS. 1 and 2). A support member 28 that supports the vibration absorbing mechanism 27 is provided on the inner wall of the first chamber 16 slightly on the −Z direction side (lower side in FIG. 1) from the flange portion 26. The lens barrel 25 is supported by the first chamber 16 with the flange portion 26 placed on the vibration absorbing mechanism 27. Based on a control command from the control device 100, the vibration absorbing mechanism 27 vibrates with a phase opposite to the periodic vibration transmitted to the lens barrel 25 and absorbs vibration transmitted to the lens barrel 25 from the outside.

A plurality of (for example, six, only one is shown in FIG. 1) reflective mirrors 29 are accommodated in the lens barrel 25. Then, the exposure light EL guided from the reticle R is sequentially reflected by each mirror 29 and guided to the wafer W held on the wafer stage 20. A reflective layer is formed on the reflective surface of each mirror 29. The reflective layer is a multilayer film in which molybdenum (Mo) and silicon (Si) are alternately stacked.

The wafer stage 20 includes an electrostatic chuck 30 and a wafer stage driving unit (not shown). The electrostatic chuck 30 has an attracting surface 30 a that electrostatically attracts the wafer W. The wafer stage drive unit moves the wafer W with a predetermined stroke in the Y-axis direction. The wafer stage drive unit moves the wafer W also in the X-axis direction and the Z-axis direction. A wafer holder (not shown) that holds the electrostatic chuck 30 and a Z leveling mechanism (not shown) are incorporated in the wafer stage 20. The Z leveling mechanism adjusts the position of the wafer holder in the Z-axis direction and the tilt angles around the X-axis and the Y-axis.

In this embodiment, when a pattern image is projected onto the wafer W by the exposure apparatus main body 15, the reticle R is moved by the reticle stage drive unit at predetermined strokes in the Y-axis direction. Thereby, the illumination area on the reticle R moves from the −Y direction side of the pattern surface Ra of the reticle R along the + Y direction side (from the left side to the right side in FIG. 1). That is, the pattern of the reticle R is scanned sequentially from the −Y direction side to the + Y direction side. Further, the wafer W is driven by the wafer stage drive unit, and moves from the −Y direction side to the + Y direction side at a speed ratio corresponding to the reduction magnification of the projection optical system 19 with respect to the movement of the reticle R along the Y axis direction. Move in synchronization with the movement of the reticle R. As a result, in one shot area of the wafer W, a pattern obtained by reducing the pattern on the reticle R to a predetermined reduction ratio is formed in accordance with the synchronous movement of the reticle R and the wafer W. When the pattern formation on one shot area is completed, the pattern formation on the other shot areas of the wafer W is continuously performed.

Next, the light source device 12 will be described with reference to FIGS.
The light source device 12 emits EUV light having a wavelength of “5 to 50 nm (for example, 13.5 nm)” as exposure light EL into the exposure device main body 15 located obliquely above. Specifically, as shown in FIG. 2, the light source device 12 is provided on a base member 40 that is disposed on the −Y direction side (right side in FIG. 2) of the support device 14 and disposed on the floor 13. ing. The base member 40 is provided with a light source support surface 41 that extends obliquely with respect to the floor 13. On the light source support surface 41, a light source device main body 42 is provided. As shown in FIG. 3, the light source device main body 42 includes a second chamber 43 having an internal space set in a vacuum atmosphere. In the second chamber 43, a light source unit 44 that outputs the exposure light EL is provided.

The light source unit 44 includes a plasma generation unit 45 that generates plasma PL and a cylindrical condensing mirror 46. The condensing mirror 46 condenses the exposure light EL emitted from the plasma PL. The plasma generation unit 45 includes a nozzle 47 and a high-power laser 48. Examples of the high-power laser 48 include a YAG laser and an excimer laser using semiconductor laser excitation. The nozzle 47 ejects high-density xenon gas (Xe) as an EUV light generating substance (target) at a high speed. When the laser beam LR emitted from the high-power laser 48 is irradiated with high-density xenon gas ejected from the nozzle 47 at a high speed, plasma PL is generated. Then, EUV light is emitted as exposure light EL from the plasma PL. The exposure light EL enters the condenser mirror 46 from the opening of the condenser mirror 46 (right side in FIG. 3).

In the condensing mirror 46, the cross-sectional shape at each position intersecting the optical axis of the exposure light EL generated from the plasma PL has an annular shape. A reflective layer capable of reflecting the exposure light EL is formed on the inner peripheral surface of the condenser mirror 46. The reflective layer of the condensing mirror 46 is composed of a multilayer film in which molybdenum (Mo) and silicon (Si) are alternately stacked. The exposure light EL reflected by the condenser mirror 46 is once condensed in the first chamber 16 and before entering the illumination optical system 17. Thereafter, the exposure light EL is incident on a reflection mirror closest to the light source device 12 among the reflection mirrors constituting the illumination optical system 17. A condensing point on which the exposure light EL emitted from the condensing mirror 46 is once condensed is referred to as an “intermediate condensing point IF”.

Next, the support device 14 will be described with reference to FIGS. 1 and 2.
As shown in FIGS. 1 and 2, the support device 14 includes a substantially rectangular parallelepiped support base 51 (also referred to as “pedestal”) and a substantially rectangular parallelepiped auxiliary support base 52. The support base 51 has a support surface 50 for supporting the exposure apparatus main body 15. The auxiliary support base 52 is disposed on the + Y direction side of the support base 51. An acceleration sensor 53 for detecting vibration generated in the support base 51 is provided on the support surface 50 having a rectangular shape in plan view. From the acceleration sensor 53, an acceleration signal corresponding to the acceleration level of the support surface 50 is output to the control device 100. The control device 100 detects the acceleration of the support surface 50 based on the acceleration signal from the acceleration sensor 53 and differentiates the detection result to detect the vibration level of the support surface 50. Then, the control device 100 sets the vibration frequency of the vibration absorbing mechanism 27 so as not to transmit the vibration of the support surface 50 to the projection optical system 19 based on the vibration level of the support surface 50, and the vibration absorbing mechanism 27 at that vibration frequency. Drive.

At the four corners of the support surface 50 of the support base 51, placement units 55 each having a placement surface 54 on which the exposure apparatus main body 15 is placed are provided. Each mounting portion 55 is formed of a material having low heat transfer efficiency (for example, low thermal expansion glass). As shown in FIG. 1, the support device 14 is provided with a cooling mechanism 56 for adjusting the temperature of each mounting portion 55 that is in direct contact with the exposure apparatus main body 15.

In the support base 51, cooling channels 57 are formed so as to correspond to the mounting portions 55, respectively. Each cooling flow path 57 is connected to a cooling mechanism 56 via a cooling pipe line 58. A cooling fluid (for example, cooling water) is supplied from the cooling mechanism 56 to the cooling channels 57 via the cooling pipes 58. Each mounting portion 55 is provided with a temperature sensor 59 for detecting the temperature thereof. Each temperature sensor 59 outputs a temperature signal corresponding to the temperature of the mounting portion 55 to the cooling mechanism 56. The cooling mechanism 56 detects the temperature of each placement unit 55 based on the temperature signal from each temperature sensor 59. The cooling mechanism 56 calculates a temperature difference between the set temperature of the floor on which the exposure apparatus 11 is installed (that is, the temperature of the exposure apparatus main body 15) and the temperature of each placement unit 55, respectively. The cooling mechanism 56 adjusts the temperature of the cooling fluid supplied to the cooling flow path 57 for each placement unit 55 so that the temperature difference approaches “0 (zero) ° C.”. Then, the cooling mechanism 56 supplies the adjusted cooling fluid to each cooling channel 57.

As shown in FIGS. 2 and 3, the height (that is, the thickness) of the support base 51 is such that the intermediate condensing point IF of the exposure light EL emitted from the condensing mirror 46 is near the entrance 60 of the first chamber 16. It is set to be located at. That is, the height of the support base 51 is set based on the distance between the generation position of the plasma PL, which is the emission point of the exposure light EL, and the intermediate condensing point IF.

As shown in FIG. 2, a plurality of (two in this embodiment) first storage chambers 61 that open in the −Z direction and a plurality of first storage chambers 61 that extend in the + Z direction from each first storage chamber 61 are provided in the support base 51. A first communication path 62 is formed. The first communication path 62 communicates with the first chamber 16. A turbo molecular pump 63 for depressurizing the inside of the first chamber 16 via the first communication passage 62 is accommodated in each first accommodation chamber 61.

As shown in FIG. 4, the turbo molecular pump 63 is not brought into contact with the side wall of the first storage chamber 61, and the end on the −Z direction side is fixed to the floor 13 in the first storage chamber 61. Contained. The turbo-molecular pump 63 includes a main body case 64 and a motor 65 disposed on the −Z direction side (that is, the floor 13 side) in the main body case 64. The motor 65 has a rotation shaft 66 extending along the + Z direction. The turbo molecular pump 63 is provided with a plurality of fixed blades 67 supported by the inner peripheral wall of the main body case 64 and a plurality of blades 68 supported by the rotating shaft 66. When each moving blade 68 rotates around the axis 69 of the rotating shaft 66 based on the driving of the motor 65, each moving blade 68 repels gas molecules flowing into the first storage chamber 61 from the first chamber 16. Ultimately, the gas molecules can be pushed out of the exposure apparatus 11 through an exhaust unit (not shown) by being applied to the fixed blade 67.

In the first communication path 62, a vibration damping unit 70 that connects the turbo molecular pump 63 and the first chamber 16 and attenuates vibration generated by the turbo molecular pump 63 is provided. The vibration damping unit 70 includes a stainless steel first bellows member 71 having a cylindrical shape. The first bellows member 71 can expand and contract in the Z-axis direction. The −Z direction end of the first bellows member 71 is fixed to the turbo molecular pump 63, and the + Z direction end of the first bellows member 71 is fixed to the first chamber 16. On the outer peripheral surface of each first bellows member 71, a first protective portion 72 made of rubber is provided. The 1st protection part 72 protects the 1st bellows member 71 in the state which can be expanded-contracted in a Z-axis direction. The turbo molecular pump 63 sucks the gas from the first chamber 16 into the main body case 64 through the exhaust port 16 </ b> A and the vibration damping unit 70, and then exhausts the gas to the outside of the exposure apparatus 11.

When the turbo molecular pump 63 is driven, each moving blade 68 repels the gas molecule in order to apply the gas molecule to the fixed blade 67. Therefore, thermal energy generated when gas molecules are bounced is stored in each rotor blade 68, in particular, on the outer side in the radial direction around the axis 69 of each rotor blade 68. If there is no member between a portion where the thermal energy of the moving blade 68 is stored (a radially outer portion of the moving blade 68) and a member (for example, a reflection mirror) disposed in the first chamber 16. There is a possibility that the temperature of the reflection mirror is increased by the radiant heat from the moving blade 68.

Therefore, in the present embodiment, a plurality of (three in FIG. 4) radiant heat absorbing members 73 having a plate shape are arranged in each first bellows member 71 along the Y-axis direction. Each radiant heat absorbing member 73 is disposed such that the end on the + Z direction side is inclined to the −Y direction side (the right side in FIG. 4) with respect to the end on the −Z direction side. In particular, the end on the + Z direction side of the radiant heat absorbing member 73 located at the center is located on the −Y direction side of the −Z direction side end of the radiant heat absorbing member 73 located on the −Y direction side. Further, the end portion on the −Z direction side of the radiant heat absorbing member 73 located at the center is located on the + Y direction side from the end portion on the + Z direction side of the radiant heat absorbing member 73 located on the most + Y direction side.

The height of the auxiliary support base 52 is substantially equal to the height of the support base 51 as shown in FIG. In the auxiliary support base 52, a plurality of (two in the present embodiment) second storage chambers 75 that open on the −Z direction side of the auxiliary support base 52, and from the inside of each second storage chamber 75 to the −Y direction side. An extended second communication path 76 is provided. A substantially L-shaped third communication passage 77 is formed in the support base 51. A communication member 78 that communicates the second communication path 76 and the third communication path 77 is provided between the auxiliary support base 52 and the support base 51. Each third communication passage 77 communicates each second storage chamber 75 in the auxiliary support base 52 with the first chamber 16. A communication portion 77 </ b> A that connects the third communication passage 77 and the first chamber 16 is provided at an end portion of each third communication passage 77 adjacent to the first chamber 16.

In each second storage chamber 75, a turbo molecular pump 79 is stored. The end of each turbo molecular pump 79 on the −Z direction side is fixed to the floor 13. A radiant heat absorbing member for absorbing radiant heat from a moving blade (not shown) of the turbo molecular pump 79 may be disposed between the turbo molecular pump 79 and the second communication path 76 in each second storage chamber 75. Since the configuration of the turbo molecular pump 79 is the same as that of the turbo molecular pump 63, a specific description thereof is omitted.

As shown in FIG. 5, the communication member 78 includes a stainless steel second bellows member 80 having a cylindrical shape. The second bellows member 80 is extendable along the Y-axis direction. The + Y direction end of the second bellows member 80 is fixed to the auxiliary support base 52, and the −Y direction end of the second bellows member 80 is fixed to the support base 51. On the outer peripheral surface of each second bellows member 80, a rubber second protection part 81 is provided. The 2nd protection part 81 protects each 2nd bellows member 80 in the state which can be expanded-contracted in a Y-axis direction. The turbo molecular pump 63 sucks the gas from the first chamber 16 through the exhaust port 16B, the third communication path 77, the communication member 78, and the second communication path 76, and the gas passes through an exhaust unit (not shown). Then, the exposure apparatus 11 is exhausted.

2, the support device 14 is provided with a cryopump 85 disposed on the + Z direction side of the light source device 12 and a cryopump support portion 86 that supports the cryopump 85. An end of the cryopump support portion 86 on the −Z direction side is fixed to the support base 51. In addition, a valve mechanism 87 is provided between the cryopump 85 and the first chamber 16 that opens when the inside of the first chamber 16 is decompressed by the cryopump 85. The valve mechanism 87 opens and closes based on a control command from the control device 100.

Next, the operation of the exposure apparatus 11 will be described focusing on the driving of the support apparatus 14.
When the turbo

molecular pumps

63 and 79 are driven, the entire inside of the first chamber 16 is decompressed, and the inside of the optical path of the exposure light EL in the first chamber 16 is adjusted to a vacuum atmosphere. At this time, the turbo

molecular pumps

63 and 79 generate vibrations based on their driving.

However, the end of each turbo molecular pump 63 in the support base 51 on the −Z direction side is fixed to the floor 13. Therefore, the transmission of vibration from each turbo molecular pump 63 to the support base 51 is suppressed as much as possible. Further, the end of each turbo molecular pump 63 on the + Z direction side is connected to the first chamber 16 via the vibration damping unit 70. Therefore, the vibration from each turbo molecular pump 63 is almost absorbed by the expansion and contraction operation of the first bellows member 71 of each vibration damping unit 70. That is, vibration based on driving of each turbo molecular pump 63 is hardly transmitted to the exposure apparatus main body 15.

Similarly to the turbo molecular pump 63, the end on the −Z direction side of each turbo molecular pump 79 in the auxiliary support base 52 is also fixed to the floor 13. Therefore, the vibration from each turbo molecular pump 79 is prevented from being transmitted to the support base 51 and the auxiliary support base 52 as much as possible. The auxiliary support base 52 is connected to the support base 51 via each communication member 78 provided for each turbo molecular pump 79. Therefore, even if the auxiliary support base 52 vibrates by driving the turbo molecular pump 79, the vibration is almost absorbed by the expansion and contraction operation of the second bellows member 80 of each communication member 78. That is, vibration at the auxiliary support base 52 is hardly transmitted to the support base 51.

Even if the support base 51 vibrates, the vibration level is detected based on the acceleration signal from the acceleration sensor 53. The vibration absorbing mechanism 27 vibrates so as to cancel the vibration transmitted from the support base 51 to the exposure apparatus main body 15 according to the vibration level of the support base 51. As a result, the vibration of the support base 51 is hardly transmitted to the projection optical system 19. Therefore, it is possible to suppress the occurrence of defects in the pattern formation of the wafer W due to the vibration transmitted from the support device 14 to the exposure apparatus main body 15.

Therefore, in this embodiment, the following effects can be obtained.
(1) The exposure apparatus main body 15 is supported by a support base 51 disposed below the exposure apparatus main body 15. Then, the optical path of the exposure light EL in the exposure apparatus main body 15 is depressurized by driving each turbo molecular pump 63 accommodated in the support base 51. By accommodating the turbo molecular pumps 63 in the support base 51 in this way, the turbo molecular pumps are placed on the side of the exposure apparatus main body 15 where various pipes and various electric wirings are installed, that is, on the side walls of the first chamber 16 and the like. Unlike the arrangement, the size and number of turbo molecular pumps are almost unlimited. Therefore, compared with the conventional configuration in which one turbo molecular pump is installed on the side wall of the exposure apparatus main body 15 and the pressure is reduced using only that pump, the pressure in the optical path of the exposure light EL in the exposure apparatus main body 15 is quickly reduced. can do.

(2) By depressurizing the interior of the first chamber 16 using the plurality of turbo molecular pumps 63, the interior of the first chamber 16 can be quickly adjusted to a degree of vacuum that allows exposure processing.
(3) A method is considered in which the turbo molecular pump is disposed apart from the first chamber 16 in place of the support base 51 and the turbo molecular pump and the first chamber 16 are connected via a long communication pipe. It is done. Even with such a method, the size and number of turbo molecular pumps that can be used are not limited. However, in this method, as the distance between the turbo molecular pump and the first chamber 16 increases, the pressure reduction efficiency in the first chamber 16 by the turbo molecular pump may decrease. In this regard, in the present embodiment, the turbo molecular pump 63 can be disposed immediately below the first chamber 16, so that the distance between the turbo molecular pump 63 and the first chamber 16 is not increased, and the first chamber 16 is formed by the turbo molecular pump 63. The decompression efficiency can be kept high.

(4) Since the light source device 12 is disposed below the exposure device main body 15, the space on the side of the exposure device main body 15 and above the light source device 12 can be used effectively. For example, the degree of vacuum in the first chamber 16 can be further increased by disposing the cryopump 85 above the light source device 12.

(5) The vibration generated based on the driving of the turbo molecular pump 63 is suitably damped by the expansion and contraction of the first bellows member 71 of the vibration damping unit 70 that connects the turbo molecular pump 63 and the first chamber 16. . Therefore, vibration generated from each turbo molecular pump 63 can be suppressed from being transmitted to the exposure apparatus main body 15, and as a result, a pattern image can be suitably projected onto the wafer W.

(6) The inside of the first chamber 16 is also depressurized by the turbo molecular pump 79 in the auxiliary support base 52 arranged on the side of the support base 51. Therefore, the inside of the first chamber 16 can be decompressed more efficiently than when the inside of the first chamber 16 is decompressed only by the turbo molecular pump 63 in the support base 51.

(7) Even if the auxiliary support base 52 vibrates by driving the turbo molecular pump 79, the vibration causes the second bellows member 80 of each communication member 78 that connects the auxiliary support base 52 and the support base 51 to expand and contract. Therefore, it is preferably attenuated. As a result, vibration generated from the turbo molecular pump 79 can be prevented from being transmitted to the exposure apparatus main body 15. Therefore, a pattern image can be suitably projected onto the wafer W.

(8) When the turbo molecular pump 63 in the support base 51 is driven, thermal energy is stored in the moving blade 68 of the turbo molecular pump 63. Such thermal energy is absorbed by the plurality of radiant heat absorbing members 73. Therefore, it is possible to suppress the radiant heat emitted from the moving blade 68 from being transmitted to a member (for example, a reflection mirror) in the exposure apparatus main body 15, and as a result, it is possible to suitably suppress thermal deformation of the reflection mirror and the like. Therefore, when a pattern image is projected onto the wafer W, it is possible to suppress the occurrence of poor projection due to thermal deformation of the reflection mirror.

(9) The temperature of each mounting portion 55 that is in direct contact with the first chamber 16 is adjusted to the same level as the temperature of the first chamber 16 by the cooling mechanism 56. Therefore, the movement of the heat energy between each placement unit 55 and the first chamber 16 is avoided, so that the temperature in the exposure apparatus main body 15 can be maintained at a desired temperature.

(10) Even a slight vibration generated based on the driving of the turbo molecular pump 63 may be transmitted to the exposure apparatus main body 15. Therefore, in the present embodiment, the magnitude and frequency of vibration transmitted to the exposure apparatus main body 15 via the support base 51 are detected based on the acceleration signal from the acceleration sensor 53, and the vibration from the support base 51 is absorbed by vibration. It can be absorbed by driving the mechanism 27. That is, the vibration from the support base 51 can be canceled by vibrating the vibration absorbing mechanism 27 with a phase opposite to the detected vibration. As a result, at least vibration of the projection optical system 19 is suppressed, and a pattern image can be suitably projected onto the wafer W.

In addition, you may change the said embodiment as follows.
In the embodiment, the cryopump 85 may be omitted from the exposure apparatus 11.
In the embodiment, when it is confirmed that the vibration generated from each turbo molecular pump 63 is not transmitted to the support base 51, the acceleration sensor 53 and the vibration absorption mechanism 27 arranged on the support surface 50 are omitted. Also good.

In the embodiment, a device having a function equivalent to that of the vibration absorbing mechanism 27 may be arranged in place of the mounting portion 55 installed on the support base 51. And it is desirable to vibrate these devices so as to cancel the vibration of the support base 51 detected or estimated based on the acceleration vibration output from the acceleration sensor 53. With this configuration, even if the support base 51 vibrates, it is possible to suppress the vibration of the support base 51 from being transmitted to the exposure apparatus main body 15. As a result, the pattern can be accurately formed on the wafer W in the exposure apparatus main body 15.

In the embodiment, the temperature detection unit may detect the amount of heat generated from each turbo molecular pump 63 or estimate the amount of heat that can be generated. In this case, the cooling mechanism 56 is driven according to the amount of heat detected or estimated by the temperature detection unit.

In the embodiment, the cooling mechanism 56 may be configured to cool the mounting portion 55 using a Peltier element.
In the embodiment, the cooling mechanism 56 may be configured to supply the cooling gas into the cooling flow path 57.

In the embodiment, when it is confirmed that the radiant heat from the moving blade 68 of the turbo molecular pump 63 in the support base 51 does not affect the exposure apparatus main body 15, the radiant heat absorbing member 73 may be omitted.

In the embodiment, the turbo

molecular pumps

63 and 79 may be fixed to the support base 51 and the auxiliary support base 52 arranged on the floor 13.
In the embodiment, an arbitrary number (for example, three) of turbo molecular pumps 79 may be provided in the auxiliary support base 52.

In the embodiment, the communication member 78 may be configured not to have a vibration damping action. According to this configuration, even if the vibration generated from the turbo molecular pump 79 in the auxiliary support base 52 is transmitted to the support base 51, the vibration is suitably absorbed by the vibration absorbing mechanism 27 that supports the projection optical system 19. Is done.

In the embodiment, the support device 14 may not include the auxiliary support base 52.
In the embodiment, an arbitrary number (for example, four) of turbo molecular pumps 63 may be provided in the support base 51.

In the embodiment, the turbo molecular pump 63 may be installed in the storage chamber 61 formed in the support base 51 through an opening / closing door (not shown) formed on the side surface of the support base 51.
In the embodiment, the turbo molecular pump may be set in the storage chamber 61 formed in the support base 51 from the lower side of the floor 13. In this case, on the floor 13, an opening / closing door may be provided at a portion corresponding to the accommodation chamber 61, and the turbo molecular pump 63 may be set via the opening / closing door.

In the embodiment, the turbo molecular pump 63 accommodated in the support base 51 may be omitted. According to this configuration, the pressure in the first chamber 16 is reduced by each turbo molecular pump 79 in the auxiliary support base 52.

In the embodiment, the support device 14 may include a dry pump. The dry pump is preferably arranged in the support base 51.
In the embodiment, the vibration attenuating unit 70 may be able to vibrate with a phase opposite to the vibration generated from the turbo molecular pump 63 in the support base 51. In this case, it is desirable to provide a device for detecting or estimating the magnitude and frequency of vibration generated from the turbo molecular pump 63.

In the embodiment, the light source unit 44 of the light source device 12 may be located on the side of the exposure apparatus main body 15. In this case, the exposure light EL is emitted from the light source device 12 along the Y-axis direction.

In the embodiment, the exposure apparatus 11 may reduce the pressure only in the optical path of the exposure light EL in the exposure apparatus main body 15 and in the vicinity thereof, not in the entire first chamber 16.
In the embodiment, the exposure apparatus 11 is for manufacturing a reticle or mask used not only in a micro device such as a semiconductor element but also in an optical exposure apparatus, an EUV exposure apparatus, an X-ray exposure apparatus, and an electron beam exposure apparatus. In addition, an exposure apparatus that transfers a circuit pattern from a mother reticle to a glass substrate, a silicon wafer, or the like may be used. The exposure apparatus 11 is used for manufacturing a display including a liquid crystal display element (LCD) and the like, and is used for manufacturing an exposure apparatus that transfers a device pattern onto a glass plate, a thin film magnetic head, and the like. It may be an exposure apparatus that transfers to a wafer or the like, and an exposure apparatus that is used to manufacture an image sensor such as a CCD.

In the embodiment, the illumination optical system 17 may be mounted on a scanning stepper that moves the reticle R and the wafer W relative to each other, transfers the pattern of the reticle R onto the wafer W, and sequentially moves the wafer W stepwise.

In the embodiment, the high-power laser 48 of the light source device 12 may be a CO ₂ laser.
In the embodiment, the light source device 12 may be a device having a discharge plasma light source.

In the embodiment, the exposure apparatus 11 may be an exposure apparatus that uses EB (Electron Beam) as the exposure light EL.
In the embodiment, the light source device 12 includes, for example, g-line (436 nm), i-line (365 nm), KrF excimer laser (248 nm), F ₂ laser (157 nm), Kr ₂ laser (146 nm), Ar ₂ laser (126 nm) Or the like. The light source device 12 amplifies the infrared or visible single wavelength laser light oscillated from the DFB semiconductor laser or fiber laser, for example, with a fiber amplifier doped with erbium (or both erbium and ytterbium). Alternatively, a light source capable of supplying harmonics converted into ultraviolet light using a nonlinear optical crystal may be used.

In the embodiment, the target is not limited to xenon, and for example, gaseous, solid, or liquid tin, or a compound containing tin may be used.
Next, an embodiment of a microdevice manufacturing method using the device manufacturing method by the exposure apparatus 11 of the embodiment of the present invention in the lithography process will be described. FIG. 6 is a flowchart showing a manufacturing process of a microdevice (a semiconductor chip such as an IC or LSI, a liquid crystal panel, a CCD, a thin film magnetic head, a micromachine, etc.).

First, in step S101 (design step), a function / performance design of a micro device (for example, a circuit design of a semiconductor device) is performed, and a pattern for realizing the function is designed. Subsequently, in step S102 (mask manufacturing step), a mask (reticle R or the like) on which the designed circuit pattern is formed is manufactured. On the other hand, in step S103 (substrate manufacturing step), a substrate (a wafer W when a silicon material is used) is manufactured using a material such as silicon, glass, or ceramics.

Next, in step S104 (substrate processing step), using the mask and substrate prepared in steps S101 to S104, an actual circuit or the like is formed on the substrate by a lithography technique or the like as will be described later. Next, in step S105 (device assembly step), a device is assembled using the substrate processed in step S104. Step S105 includes processes such as a dicing process, a bonding process, and a packaging process (chip encapsulation) as necessary. Finally, in step S106 (inspection step), inspections such as an operation confirmation test and a durability test of the microdevice manufactured in step S105 are performed. After these steps, the microdevice is completed and shipped.

FIG. 7 shows details of step S104 in the case of a semiconductor device.
In step S111 (oxidation step), the surface of the substrate is oxidized. In step S112 (CVD step), an insulating film is formed on the substrate surface. In step S113 (electrode formation step), an electrode is formed on the substrate by vapor deposition. In step S114 (ion implantation step), ions are implanted into the substrate. Steps S111 to S114 constitute a pretreatment process at each stage of the substrate processing, and are selected and executed according to necessary processes at each stage.

At each stage of the substrate process, when the above-described pretreatment process is completed, the posttreatment process is executed as follows. In the post-processing step, first, in step S115 (resist formation step), a photosensitive material is applied to the substrate. Subsequently, in step S116 (exposure step), the circuit pattern of the mask is transferred to the substrate by the lithography system (exposure apparatus 11). Next, in step S117 (development step), the substrate exposed in step S116 is developed to form a mask layer made of a circuit pattern on the surface of the substrate. Subsequently, in step S118 (etching step), the exposed member other than the portion where the resist remains is removed by etching. In step S119 (resist removal step), the photosensitive material that has become unnecessary after the etching is removed. That is, in step S118 and step S119, the surface of the substrate is processed through the mask layer. By repeating these pre-process and post-process, multiple circuit patterns are formed on the substrate.

Claims

An exposure optical system having an illumination optical system capable of illuminating the first surface with light emitted from the light source unit, and a projection optical system capable of projecting an image of a predetermined pattern onto a second surface different from the first surface; ,
A support base for supporting the exposure apparatus main body from below;
An exposure apparatus comprising: a vacuum exhaust unit disposed under the exposure apparatus main body and depressurizing an optical path of the light in the exposure apparatus main body.
The exposure apparatus according to claim 1, wherein the support base has a communication path that communicates the vacuum exhaust section and the inside of the exposure apparatus main body.
The exposure apparatus according to claim 1, wherein the light source unit includes a condensing optical system that condenses the light at an intermediate condensing point.
The light source unit is disposed on a side of the support base, and the condensing optical system is disposed so as to emit the light toward the exposure apparatus body located obliquely above the light source unit. Item 4. The exposure apparatus according to Item 3.
The exposure apparatus according to claim 3, wherein the height of the support base is set based on a distance between a light emission point of the light source unit and the intermediate condensing point.
The exposure apparatus according to claim 3, wherein a height of the support base is set based on an arrangement of the condensing optical system.
The exposure according to claim 2, wherein the vacuum evacuation unit is accommodated in the support base, and a vibration attenuating unit for attenuating vibration generated based on driving of the evacuation unit is provided in the communication path. apparatus.
The exposure apparatus according to claim 7, wherein the vacuum exhaust unit is connected to the exposure apparatus main body via the vibration damping unit.
9. The support table includes a plurality of storage chambers that store the vacuum exhaust unit, and the vacuum exhaust units are stored in the storage chambers, respectively. The exposure apparatus described in 1.
An auxiliary support base disposed on the side of the support base and having a storage chamber for storing the evacuation unit;
A communication member is provided between the auxiliary support base and the support base to connect the storage chamber of the auxiliary support base and the communication path of the support base, and the communication member is used to drive the vacuum exhaust unit. The exposure apparatus according to claim 2, wherein the generated vibration is attenuated.
The exposure apparatus according to claim 10, wherein a plurality of the storage chambers are formed in the auxiliary support base, and the vacuum evacuation unit is stored in each of the storage chambers.
The exposure apparatus according to any one of claims 2 to 11, wherein the vacuum exhaust unit includes a turbo molecular pump.
The evacuation unit includes a moving blade that rotates about a predetermined axis, and a radiant heat absorbing member that absorbs radiant heat emitted from the moving blade is provided in a communication path of the support base. 12. The exposure apparatus according to 12.
The exposure apparatus according to any one of claims 1 to 13, wherein the support base is provided with a mounting portion having a mounting surface on which the exposure apparatus main body is mounted.
The exposure apparatus according to claim 14, further comprising a cooling unit that cools the mounting unit.
The exposure apparatus according to claim 15, wherein the cooling unit includes a cooling channel that is disposed in the support base and through which a cooling fluid can flow.
A temperature detection unit for detecting a heat generation amount of the vacuum exhaust unit;
The exposure apparatus according to claim 15, wherein the cooling unit is driven based on a temperature detected by the temperature detection unit.
A vibration detector for detecting a vibration level of the support;
A vibration absorbing portion that absorbs vibration transmitted from the support to the exposure apparatus main body,
The vibration absorbing unit is driven to cancel the vibration transmitted from the support base based on a vibration level detected by the vibration detecting unit. Exposure equipment.
The exposure apparatus according to any one of claims 1 to 18, wherein the light is EUV light.
In a device manufacturing method including a lithography process,
The device manufacturing method using the exposure apparatus according to any one of claims 1 to 19, in the lithography process.
Supports an exposure apparatus body having an illumination optical system capable of illuminating the first surface with light emitted from the light source unit and a projection optical system capable of projecting an image of a predetermined pattern onto a second surface different from the first surface. In the supporting device to
A support base having a mounting surface on which the exposure apparatus main body is mounted;
A vacuum exhaust unit for reducing the pressure in the exposure apparatus body;
A communication path formed in the support base and communicating the exposure apparatus main body and the vacuum exhaust unit;
And a vibration attenuating portion that is disposed in the communication path and attenuates vibrations generated based on driving of the evacuation portion.
Supports an exposure apparatus body having an illumination optical system capable of illuminating the first surface with light emitted from the light source unit and a projection optical system capable of projecting an image of a predetermined pattern onto a second surface different from the first surface. In the support stand to
2. A support base comprising: a housing space for housing a vacuum exhaust portion for decompressing the inside of the exposure apparatus main body; and a communication path for communicating the housing space and the exposure apparatus main body.