WO2010037322A1 - 用于射频sim卡的两次变频接收电路和方法 - Google Patents

用于射频sim卡的两次变频接收电路和方法 Download PDF

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Publication number
WO2010037322A1
WO2010037322A1 PCT/CN2009/074068 CN2009074068W WO2010037322A1 WO 2010037322 A1 WO2010037322 A1 WO 2010037322A1 CN 2009074068 W CN2009074068 W CN 2009074068W WO 2010037322 A1 WO2010037322 A1 WO 2010037322A1
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frequency
signal
low
intermediate frequency
local oscillator
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PCT/CN2009/074068
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English (en)
French (fr)
Inventor
周建波
赵骞
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国民技术股份有限公司
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Priority to US13/120,362 priority Critical patent/US8369819B2/en
Publication of WO2010037322A1 publication Critical patent/WO2010037322A1/zh

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/0723—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H04B1/26—Circuits for superheterodyne receivers
    • H04B1/28—Circuits for superheterodyne receivers the receiver comprising at least one semiconductor device having three or more electrodes

Definitions

  • This invention relates to record carriers for use with machines, and more particularly to record carriers with semiconductor circuit components, and more particularly to two frequency conversion circuits and methods for radio frequency SIM cards. Background technique
  • the prior art RF radio transceiver chip includes three implementations of super-heterodyne (two-frequency conversion), low-intermediate frequency (primary frequency conversion), and zero intermediate frequency.
  • the present invention is based on two frequency conversion technologies working in the 2. GH ISM band. An ingenious frequency allocation scheme, and successfully applied flexibly in the radio frequency SIM card of the radio frequency handheld terminal.
  • the present invention Compared with the prior art scheme adopted in the 2.4 GHz ISM band, the present invention has the advantage that the signal image frequency is pushed up to about 3 GHz by clever frequency allocation without using an external image rejection filter.
  • the 3 GHz band is rarely used, which effectively solves the image rejection problem of the 2.4 GHz ISM band in actual use and is successfully applied on the RF S IM card.
  • the above-mentioned prior art frequency conversion method has the following disadvantages: When the RF SIM card is used in the 2. 4 GHz ISM band, an external filter is needed to solve the image suppression problem in actual use, and the chip consumes a large amount of power.
  • the technical problem to be solved by the present invention is to avoid the above-mentioned deficiencies of the prior art and propose a two-frequency conversion circuit and method applied to a radio frequency SIM card.
  • the present invention provides a two-frequency conversion receiving circuit for a radio frequency SIM card, including a low noise amplifier, a high intermediate frequency mixer, a low intermediate frequency mixer, a local oscillator, a quadrature I/Q circuit, and a low intermediate frequency processing.
  • the circuit further includes a frequency divider, wherein the frequency divider divides the high local oscillator signal generated by the local oscillator by N, the N is a positive integer, 5 ⁇ N ⁇ 12, and obtains a low local oscillator signal;
  • the low local oscillator signal is input to the quadrature I/Q circuit to obtain a low I/Q local oscillator signal;
  • the I/Q local oscillator signal output from the quadrature I/Q circuit is simultaneously with the high intermediate frequency signal output by the high intermediate frequency mixer
  • the input to the low intermediate frequency mixer is mixed to obtain a low intermediate frequency signal; the low intermediate frequency signal is processed by the low intermediate frequency processing circuit to finally output the desired signal that has undergone two frequency conversions.
  • the technical problem of the present invention can be further solved by adopting the following technical solutions: providing a method for The two-frequency conversion scheme of the radio frequency SIM card is based on two frequency conversion circuits applied to the radio frequency SIM card, and the frequency conversion method includes the following steps:
  • the local oscillator generates a high local oscillator signal L0 H with a frequency of f LQ , highIF , which is simultaneously input to the high intermediate frequency mixer and the frequency divider;
  • the frequency divider divides the high local oscillator signal L0 H by N to obtain a low local oscillator signal L0 L whose frequency is f L0, lowIF, and then sent to the orthogonal I/Q circuit;
  • the quadrature I/Q circuit processes the input low local oscillator signal L0 L to generate an orthogonal I/Q local oscillator signal, which is input to the low intermediate frequency mixer;
  • the signal f rf received from the antenna is input to the low noise amplifier
  • the antenna signal f rf is amplified by a low noise amplifier and output to a high intermediate frequency mixer to obtain a high intermediate frequency signal IF H , the frequency of which is f IF, high,
  • the high intermediate frequency signal IF H and the orthogonal I / Q local oscillator signal are simultaneously input to the low intermediate frequency mixer, and the low intermediate frequency signal IF L is obtained , the frequency is f IF , low ; the low intermediate frequency signal IF L passes The low-IF processing circuit processes the output, thereby obtaining the signals that have been required after two conversions.
  • the radio frequency SIM card includes a radio frequency radio transceiver chip, an interface processing circuit, and a main control integrated circuit, and the radio frequency SIM card can communicate with the matched peripheral device within a certain distance through the radio frequency radio transceiver chip.
  • the radio frequency transceiver chip operates in the 1.4 GHz ISM band.
  • the present invention has the beneficial effects that: the signal image frequency can be pushed up to about 3 GHz by clever frequency allocation without using an external image suppression filter, effectively solving the RF SIM card in 2.4.
  • Figure 1 is a logic block diagram of the circuit of the present invention
  • FIG. 1 is a schematic diagram of the composition of a radio frequency SIM card according to the present invention. detailed description
  • the present invention relates to a two-frequency conversion circuit applied to a radio frequency SIM card, as shown in FIG. 1, including a low noise amplifier 01, a high intermediate frequency mixer 02, a low intermediate frequency mixer 03, a local oscillator 04, and an orthogonal I.
  • /Q circuit 05 and low intermediate frequency processing circuit 07 further comprising a frequency divider 06, the frequency divider 06 divides the high local oscillator signal generated by the local oscillator 04 by N, the N is a positive integer, 5 ⁇ N ⁇ 12 Obtaining a low local oscillator signal; inputting the divided low local oscillator signal into the quadrature I/Q circuit 05 to obtain a low I/Q local oscillator signal; and outputting the I/Qbook from the quadrature I/Q circuit 05
  • the high-frequency signal outputted by the vibration signal and the high-IF mixer 02 is simultaneously input to the low-IF mixer 03 to obtain a low-IF signal; the low-IF signal is processed by the low-IF processing circuit 07 and finally output twice after being converted. Required signal.
  • the technical problem of the present invention can be achieved by using the following technical solutions:
  • the two-frequency conversion method for the radio frequency SIM card is based on a two-frequency conversion circuit applied to the radio frequency SIM card, as shown in FIG. Yes, the method includes the steps shown in FIG. 1:
  • the local oscillator 04 generates a high local oscillator signal L0 H whose frequency is f LQ , MghIF , and is simultaneously input to the high intermediate frequency mixer 02 and the frequency divider 06;
  • the frequency divider 06 divides the high local oscillation signal L0 H by N to obtain a low local oscillation signal L0 L having a frequency of f L Q, l. w IF , and then sent to the orthogonal I / Q circuit 05;
  • step 13 the quadrature I /Q circuit 05 processes the input low local oscillator signal L0 L to generate orthogonal
  • step 14 the signal f rf received from the antenna is input to the low noise amplifier 01;
  • the antenna signal f rf is amplified by the low noise amplifier 01 and output to the high intermediate frequency mixer 02 to obtain a high intermediate frequency signal IF H , the frequency of which is f IF , high ;
  • step 16 the high intermediate frequency signal IF H and the orthogonal I/Q local oscillator signal are simultaneously input to the low intermediate frequency mixer 03, and the low intermediate frequency signal IF L is obtained , the frequency of which is f IF , low ;
  • step 17 the low intermediate frequency signal IF L is processed by the low intermediate frequency processing circuit 07 and output, thereby obtaining a signal that has been required after two frequency conversions.
  • the high image signal is located at:
  • the frequency of the low-IF mixer local oscillator signal is 1 / 8 of the high-IF local oscillator signal frequency, namely:
  • the image frequency of the 345.143MHz high-IF is 347.143MHz, which can be suppressed by the traditional image rejection mixer structure. Since the frequency has dropped from 2.4GHz to
  • the radio frequency SIM card includes a radio frequency radio transceiver chip 21, an interface processing circuit 22, and a main control integrated circuit 23, and the radio frequency SIM card can be performed with a peripheral device within a certain distance through the radio frequency radio transceiver chip 21. Communication.
  • the radio frequency transceiver chip 21 operates in the 2.4 GHz ISM band.

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  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Transceivers (AREA)
  • Superheterodyne Receivers (AREA)

Description

说 明 书 用于射频 S IM卡的两次变频接收电路和方法 技术领域
本发明涉及连同机器一起使用的记录载体， 特别涉及带有半导体电路元件的记录载 体， 尤其涉及用于射频 S IM卡的两次变频电路和方法。 背景技术
现有技术射频无线收发芯片， 包括超外差 （两次变频）、 低中频 （一次变频）和零中 频等三种实现方案， 本发明基于工作在 2. 4GH ISM频段的两次变频技术， 提出一种巧妙的 频率分配方案， 并成功地在射频手持终端的射频 SIM卡中得到灵活应用。
相对于现有技术在 2. 4GHz ISM频段所釆用的方案， 本发明优势在于， 在不用外部镜 像抑制滤波器的条件下，通过巧妙的频率分配，将信号镜像频率推高到 3GHz左右，而 3GHz 频段很少被使用， 从而有效解决了 2. 4GHz ISM频段在实际使用中的镜像抑制问题， 并在 射频 S IM卡上被成功地应用。
上述现有技术频率变换的方法存在以下不足： 射频 S IM卡应用在 2. 4GHz ISM频段时， 需要借助外部滤波器来解决实际使用中的镜像抑制问题， 并且芯片功耗较大.， 发明内容
本发明要解决的技术问题在于避免上述现有技术的不足之处而提出一种应用在射频 SIM卡的两次变频电路和方法。
本发明提供了一种用于射频 S IM卡的两次变频接收电路， 包括低噪声放大器、 高中频 混频器、 低中频混频器、 本地振荡器、 正交 I/Q电路和低中频处理电路； 还包括分频器， 所述分频器将本地振荡器产生的高本振信号进行 N分频， 所述 N为正整数， 5 〈N〈12， 得 到低本振信号； 将分频后的低本振信号输入所述正交 I/Q电路， 得到低 I/Q本振信号； 从 正交 I /Q电路输出的 I/Q本振信号与高中频混频器输出的高中频信号同时输入到低中频混 频器混合后得到低中频信号； 该低中频信号经过低中频处理电路处理后最终输出已经过两 次变频的所需信号。
本发明解决所述技术问题还可以通过采用以下技术方案进一步来实现：提供一种用于 射频 SIM卡的两次变频方案， 基于应用在射频 SIM卡的两次变频电路， 所述变频方法包括 步骤：
A. 本地振荡器产生高本振信号 L0H,其频率为 fLQ,highIF， 同时输入至高中频混频器和分 频器；
B. 分频器将所述高本振信号 L0H进行 N分频得到低本振信号 L0L， 其频率为 f L0, lowIF, 然后送到正交 I/Q电路；
C. 正交 I/Q电路将输入的低本振信号 L0L进行处理， 产生正交的 I/Q本振信号， 输入 至低中频混频器；
D. 从天线接收的信号 frf输入至低噪声放大器；
E. 天线信号 frf 经低噪声放大器放大后输出至高中频混频器混合， 得到高中频信号 IFH, 其频率为 f IF, high,
F. 高中频信号 IFH和所述正交 I /Q本振信号同时输入低中频混频器后，得到低中频信 号 IFL， 其频率为 f IF, low; 所述低中频信号 IFL通过低中频处理电路处理后输出，从而得到已经过两次变频后所需 要的信号。
所述高本振信号 L0H的频率 fLQ,highIF满足： fLo.highiF = [ N/ (N-1 ) ] * ( frf + fIF, low ), 其中 N取大于 5小于 12的整数。 所述射频 SIM卡包括射频无线收发芯片、 接口处理电路、 主控集成电路， 该射频 SIM卡能够通过射频无线收发芯片在一定距离内与配套的外围装置进行通信。
所述射频无线收发芯片工作在 1.4GHz ISM频段。
同现有技术相比较， 本发明的有益效果在于： 可以在不用外部镜像抑制滤波器的条件 下， 通过巧妙的频率分配， 将信号镜像频率推高到 3GHz左右， 有效解决了射频 SIM卡在 2.4GHz ISM频段实际使用中的镜像抑制问题， 同时并降低了芯片的功耗。
附图说明
图 1是本发明电路的逻辑框图；
图 1是本发明所述射频 SIM卡组成示意图。 具体实施方式
以下结合附图所示之优选实施例作进一步详述。
本发明一种应用在射频 S IM卡的两次变频电路， 如图 1所示， 包括低噪声放大器 01、 高中 频混频器 02、 低中频混频器 03、 本地振荡器 04、 正交 I/Q电路 05和低中频处理电路 07; 还包括分频器 06， 所述分频器 06将本地振荡器 04产生的高本振信号进行 N分频， 所述 N 为正整数， 5〈N〈12，得到低本振信号； 将分频后的低本振信号输入所述正交 I /Q电路 05， 得到低 I/Q本振信号； 从正交 I/Q电路 05输出的 I /Q本振信号与高中频混频器 02输出的 高中频信号同时输入到低中频混频器 03 混合后得到低中频信号； 该低中频信号经过低中 频处理电路 07处理后最终输出已经过两次变频的所需信号。
本发明解决所述技术问题可以通过釆用以下技术方案来实现： 用于射频 SIM卡的两次 变频方法， 基于一种应用在射频 S IM卡的两次变频电路， 如图 1所示， 尤其是， 所述方法 包括步骤如图 1所示：
A. 如步骤 11所示， 本地振荡器 04产生高本振信号 L0H,其频率为 fLQ,MghIF， 同时输 入至高中频混频器 02和分频器 06;
B. 如步骤 12所示，分频器 06将所述高本振信号 L0H进行 N分频得到低本振信号 L0L, 其频率为 fLQ, l。wIF , 然后送到正交 I /Q电路 05;
C. 如步骤 13所示，正交 I /Q电路 05将输入的低本振信号 L0L进行处理，产生正交的
I /Q本振信号， 输入至低中频混频器 03;
D. 如步骤 14所示， 从天线接收的信号 frf输入至低噪声放大器 01 ;
E. 如步骤 15所示， 天线信号 frf经低噪声放大器 01放大后输出至高中频混频器 02 混合， 得到高中频信号 IFH, 其频率为 fIF,high;
F. 如步骤 16所示，高中频信号 IFH和所述正交 I/Q本振信号同时输入低中频混频器 03后, 得到低中频信号 IFL, 其频率为 fIF, low；
G. 如步驟 17所示，所述低中频信号 IFL通过低中频处理电路 07处理后输出，从而得 到已经过两次变频后所需要的信号。
所述高本振信号 L0H的频率 fLQ,highIF满足： fLo,hi8hiF = [ N/ (N-l ) ] * ( frf + fIF, low ), 其中 N取大于 5小于 12的整数。 下面以一实施例说明本发明的实现方法： 假设输入天线信号 frf频率为 2400MHz,低中频输出信号为 2MHz, 并取 N=8, 即高本振 信号频率是低本振信号频率的 8倍， 应用上文公式， 高本振信号频率为：
f 1F = ( + 2MHz) = 2745.143MHz 高中频信号 IFH频率为： f„ = + 顺 = 345.143MHZ
Figure imgf000006_0001
高镜像信号位于：
fimaM = fL0MgMF + f1F h = 2745.143 + 345.143 = 3090.286MHz
由于 3GHz附近的频段干扰非常少， 因此工作在 2.4GHz的射频 SIM卡使用时， 可不需 要外加镜像抑制滤波器。
低中频混频器本振信号的频率是高中频本振信号频率的 1 /8,即：
fLo, iowiF = fLo.highiF /8= 343.143MHz
验算结果， 低中频输出信号频率为：
f IF, low = I f L0, lowIF — f IF, , high I = 2MHz, 完全正确。
在低中频混频器中， 中频 2MHz时， 其 345.143MHz高中频的镜像频率为 347.143MHz, 可通过传统的镜像抑制混频器结构来实现抑制。 由于频率已经从 2.4GHz 下降到
347.143MHz, 用传统的技术方案则处理起来将比 2.4GHz高频下容易很多。
如图 2所示， 所述射频 SIM卡包括射频无线收发芯片 21、 接口处理电路 22、 主控集 成电路 23， 该射频 SIM卡能够通过射频无线收发芯片 21在一定距离内与配套的外围装置 进行通信。
所述射频无线收发芯片 21工作在 2.4GHz ISM频段。
上述实现过程为本发明的优先实现过程，本领域的技术人员在本发明的基础上进行的 通常变化和替换包含在本发明的保护范围之内。

Claims

权 利 要 求 书
1、 一种用于射频 SIM卡的两次变频接收电路， 包括低噪声放大器（ 01 ), 高中频混频器 （02)、 低中频混频器（03)、 本地振荡器（04)、 正交 I/Q电路
( 05 ) 和低中频处理电路 ( 07 ); 其特征在于：
还包括分频器（ 06 ), 所述分频器（ 06 )将本地振荡器（ 04 )产生的高本 振信号进行 N分频， 所述 N为正整数， 5 〈N〈12, 得到低本振信号； 将分频 后的低本振信号输入所述正交 I/Q电路（05 ), 得到低 I/Q本振信号； 从正交 I/Q电路（ 05 )输出的 I/Q本振信号与高中频混频器（02 )输出的高中频信号 同时输入到低中频混频器 （03) 混合后得到低中频信号； 该低中频信号经过 低中频处理电路（07 )处理后最终输出已经过两次变频的所需信号。
2、 一种用于射频 SIM卡的两次变频方法， 基于权利要求 1所述的变频电 路， 其特征在于， 包括步骤：
A. 本地振荡器（ 04 )产生高本振信号 L0H，其频率为 fM,highIF， 同时输入至高 中频混频器（02)和分频器（06)；
B. 分频器（ 06 )将所述高本振信号 L0H进行 N分频得到低本振信号 L0L， 其 频率为 f 然后送到正交 I/Q电路 ( 05 );
C. 正交 I/Q电路（ 05 )将输入的低本振信号 1Λ进行处理， 产生正交的 I/Q 本振信号， 输入至低中频混频器 （03);
D. 从天线接收的信号 frf输入至低噪声放大器（ 01 );
E. 天线信号 frf 经低噪声放大器（01 )放大后输出至高中频混频器 （02 ) 混合， 得到高中频信号 IFH, 其频率为 fIF,high;
F. 高中频信号 IFH和所述正交 I/Q本振信号同时输入 中频混频器（03) 后， 得到低中频信号 IFL, 其频率为 fIF, 1ow;
G. 所述低中频信号 通过低中频处理电路（07) 处理后输出， 从而得到 已经过两次变频后所需要的信号。
3、 如权利要求 2所述的用于射频 SIM卡的两次变频方法， 其特征在于： 所述高本振信号 L0H的频率 fM,highIF满足：
fLo, glliF =[ N/ (N- 1 ) ]* (frf + f IF, low ), 其中 N取大于 5小于 12的整 数。
4、如权利要求 2所述的应用在射频 SIM卡的两次变频方法，其特征在于： 所述射频 SIM卡包括射频无线收发芯片 （21)、 接口处理电路（22)、 主 控集成电路（23), 该射频 SIM卡能够通过射频无线收发芯片 （21 )在一定距 离内与配套的外围装置进行通信。
5、 如权利要求 2或 4所述的应用在射频 SIM卡的两次变频方法， 其特征 在于：
所述射频无线收发芯片 （21 ) 工作在 2.4GHz ISM频段。
PCT/CN2009/074068 2008-09-23 2009-09-21 用于射频sim卡的两次变频接收电路和方法 WO2010037322A1 (zh)

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Application Number Priority Date Filing Date Title
US13/120,362 US8369819B2 (en) 2008-09-23 2009-09-21 Double frequency-conversion receiving circuit and method used for radio-frequency SIM card

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