WO2010034181A1 - Utilisation d'un composé aminé et liquide de polissage mécanico-chimique - Google Patents

Utilisation d'un composé aminé et liquide de polissage mécanico-chimique Download PDF

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Publication number
WO2010034181A1
WO2010034181A1 PCT/CN2009/001002 CN2009001002W WO2010034181A1 WO 2010034181 A1 WO2010034181 A1 WO 2010034181A1 CN 2009001002 W CN2009001002 W CN 2009001002W WO 2010034181 A1 WO2010034181 A1 WO 2010034181A1
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WO
WIPO (PCT)
Prior art keywords
polishing liquid
mechanical polishing
chemical mechanical
polishing
hydrogen
Prior art date
Application number
PCT/CN2009/001002
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English (en)
Chinese (zh)
Inventor
姚颖
宋伟红
Original Assignee
安集微电子科技(上海)有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 安集微电子科技(上海)有限公司 filed Critical 安集微电子科技(上海)有限公司
Publication of WO2010034181A1 publication Critical patent/WO2010034181A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Definitions

  • This invention relates to the use of a compound, and more particularly to the use of an amine compound.
  • the invention also relates to a chemical mechanical polishing fluid.
  • interlayer dielectric ILD
  • CMP chemical mechanical polishing
  • the CMP process uses an abrasive-containing mixture and a polishing pad to polish the surface of the integrated circuit.
  • the substrate is placed in direct contact with a rotating polishing pad and a load is applied to the back side of the substrate with a load.
  • the gasket and the table rotate while maintaining a downward force on the back of the substrate, applying abrasive and chemically active solutions (often referred to as polishing fluids or polishing slurries) to the gasket.
  • polishing fluids or polishing slurries abrasive and chemically active solutions
  • the copper polishing solution often introduces some chemicals, which contain nitrogen or oxygen atoms, and have strong complexation or chelation of metal ions, which can significantly enhance the copper metal. Polishing rate. Most of these chemicals contain a carboxyl group or an amine group, and the most common ones are glycine, diethylamine tetraacetic acid, citric acid, triethanolamine, and the like.
  • Ammoniatriacetic acid and iminoacetic acid are polyamino acids containing amino groups and are currently used mainly for metal polishing, disk polishing and surface cleaning.
  • a complexing agent of ammonia triacetic acid as a copper polishing liquid is disclosed, for example, in US 20070186484 US 20070224101, US 20080057716.
  • USPatent 6527819 The use of iminodiacetic acid in metal polishing fluids is described in US Patent 7029373. However, the use of compounds such as ammonia triacetic acid or iminoacetic acid in oxide polishing fluids is rarely mentioned in the patent.
  • the oxide dielectric includes thin thermal oxide, high density plasma oxide > borophosphosilicate glass, tetraethoxy silica (PETEOS) And carbon doped oxide or the like.
  • Polishing abrasives for oxide dielectric polishing slurries are primarily fumed silica, ceria and sol silica, but the first two abrasives tend to scratch the surface during polishing. Compared with the first two kinds of abrasives, the sol-type silica produces less surface defects during polishing, but the removal rate of the oxide dielectric is lower, and the amount of abrasive in the polishing liquid tends to be higher, the amount of abrasive used. Even as high as 30% or more. Moreover, the pH of the polishing liquid is also high, and most of the polishing liquid has a pH of 10.5 or more. Summary of invention
  • the technical problem to be solved by the present invention is to overcome the defects of high polishing abrasive content and high polishing surface defects in the chemical mechanical polishing liquid for polishing an oxide dielectric in the prior art, and provide an amine compound in preparation.
  • the use of a polishing liquid for polishing an oxide dielectric can increase the silica removal rate.
  • the present invention also provides a chemical mechanical polishing liquid containing the above compound.
  • the present invention provides a novel use of an amine compound as shown in Formula 1, which can be used for preparing a polishing liquid for a polishing oxide dielectric to achieve an effect of increasing the dielectric removal rate of an oxide. among them
  • R, . R 2 and R 3 are each hydrogen, (CH 2 ) n COOR4 or (CH 2 ) n CONH 2 , but are not hydrogen at the same time; n is
  • R4 is hydrogen, an alkali metal ion, an ammonium ion or a fluorenyl group having 1 to 4 carbon atoms.
  • the amine compound is preferably selected from the group consisting of ammonia triacetic acid, ammonia triacetate, Methyl ammonia triacetate, ethyl triacetate, propyl triacetate, butyl triacetate, iminodiacetic acid, iminodiacetic acid acetate, methyl iminodiacetic acid, ethyl iminoacetate, Isopropyl diacetate, butyl iminodiacetic acid, carbamate or ammonium imino acid; the most preferred is ammonia triacetic acid, iminodiacetic acid or carbamide.
  • the present invention also provides a chemical mechanical polishing liquid containing the above compound.
  • the chemical mechanical polishing liquid contains one or more of silica, an amine compound, a surfactant, and water, and the molecular structure of the amine compound is shown in Formula 1.
  • the amount of the amine compound is preferably from 0.1 to 3%, more preferably from 0.1% to 1%.
  • the percentage is the mass percentage.
  • the silica is preferably a sol type silica which is an aqueous solution system of monodisperse silica colloidal particles, wherein the concentration of the silica colloidal particles is preferably 20 to 50%, more preferably It is 30%.
  • the particle diameter of the silica is preferably from 30 to 120 nm.
  • the amount of silica is preferably from 10 to 30%, more preferably from 10 to 20%. The percentage is the mass percentage.
  • the surfactant is preferably a nonionic and/or amphoteric surfactant, more preferably lauroyl propyl amine oxide, dodecyl dimethyl amine oxide (OA-12), coconut oil.
  • the surfactant is preferably used in an amount of less than or equal to 0.2%, but not including 0%, more preferably 0.005 to 0.05%; and percentages are by mass.
  • a nonionic or amphoteric surfactant when used, by adjusting the kind of the surfactant, different polysilicon removal rates can be obtained, thereby achieving the purpose of adjusting the polysilicon removal rate.
  • dodecyl dimethyl betaine has a high removal rate of polysilicon
  • cocamidopropyl betaine has a low polysilicon removal rate
  • the polysilicon removal rate is different. Between the removal rates when used.
  • the water is preferably deionized water, and the water is supplemented with 100% by mass.
  • the conventionally added auxiliary in the field can be added to the polishing liquid of the present invention.
  • Reagents such as viscosity modifiers, alcohol or ether reagents, sol type silica stabilizers, fungicides, and the like.
  • the polishing liquid of the present invention preferably has a pH of from 9 to 12, more preferably from 10 to 12.
  • the polishing liquid of the present invention can be obtained by simply and uniformly mixing the above components, followed by adjustment to a suitable pH with a pH adjuster.
  • the pH adjusting agent may be selected from conventional pH adjusting agents in the art, such as potassium hydroxide and aqueous ammonia.
  • the positive progress of the present invention is as follows: (1) The present invention provides an application of an amine compound in polishing an oxide; (2) the amine compound of the present invention can enhance the polishing rate of an oxide dielectric; (3) A chemical mechanical polishing liquid containing the amine compound of the present invention, having a lower abrasive content and a higher silica removal rate; (4) a non-ionic type is used in a preferred embodiment of the invention. / or amphoteric surfactants, can obtain different polysilicon removal rate, so as to achieve the purpose of adjusting the polysilicon removal rate.
  • Figure 1 is a graph of TEOS removal rates for different amine compounds.
  • Figure 2 is a graph showing the TEOS removal rate for various amounts of amine compounds.
  • Figure 3 is a graph showing the removal rate of the polishing solution at different pH values.
  • Figure 4 is a plot of TEOS and Ploy removal rates for silicas of different particle sizes.
  • Figure 5 is a graph of TEOS removal rates for different amounts of silica.
  • Figure 6 is a graph showing the removal rates of TEOS, Si 3 N 4 and Poly for different surfactants.
  • Figure 7 is a graph showing the removal rates of TEOS and Poly for different amounts of surfactant.
  • the removal rate of silica was measured using polishing liquids 1 to 4 and comparative polishing liquid 1 (TEOS), as shown in Fig. 1. As can be seen from the figure, the polishing rate of the polishing solution containing Compound A significantly increased the TEOS polishing rate compared to Comparative Example 1 in which no compound was added.
  • TEOS comparative polishing liquid 1
  • polishing solution The formulation of the polishing solution is shown in Table 1.
  • the components are simply and uniformly mixed according to the contents listed in Table 1.
  • the pH is adjusted with KOH, and the remaining amount is made by deionized water.
  • Polishing conditions are: downforce 4.0 psi, polishing pad IC1000, polishing disk speed 70 rpm, polishing fluid flow rate 100 ml/min, polishing machine Logitec PM5.
  • the silica removal rate was measured by polishing the liquid 3, 5 to 8 and the comparative polishing liquid 2, as shown in Fig. 2. As can be seen from the figure, the polishing rate of the polishing liquid increases as the amount of the additive increases.
  • the formulation of the polishing solution is shown in Table 2. The components are simply and uniformly mixed according to the contents listed in Table 2. The pH is adjusted with KOH, and the remaining amount is made by deionized water.
  • Polishing conditions are: downforce 4.0 psi, polishing pad IC1000, polishing disk speed 70 rpm, polishing The flow rate was 100 ml/min, and the polishing machine was Logitec PM5.
  • the silica and polycrystalline silicon (Poly) were polished with a polishing solution of 9 to 12 to determine the removal rates of silica and Poly, as shown in Fig. 3.
  • polishing solution The formulation of the polishing solution is shown in Table 3.
  • the components are simply and uniformly mixed according to the contents listed in Table 3.
  • the pH is adjusted with KOH, and the remaining amount is made by deionized water.
  • Polishing conditions are: downforce 4.0 psi, polishing pad IC1000, polishing disk speed 70 rpm, polishing fluid flow rate 100 ml/min, polishing machine Logitec PM5.
  • the silica was polished with a polishing liquid 13 to 15 to determine the removal rate of silica, as shown in Fig. 4. As can be seen from the figure, the silica particle size does not have a large influence on the polishing rate, and a wide silica particle size range can be selected.
  • polishing solution The formulation of the polishing solution is shown in Table 4.
  • the components are simply and uniformly mixed according to the contents listed in Table 4.
  • the pH is adjusted with KOH, and the remaining amount is made by deionized water.
  • Polishing conditions are: lower pressure 4.0 psi, polishing pad IC1000, Polishing plate rotation speed 70 rpm, polishing liquid flow rate 100 ml/min, polishing machine Logitec PM5.
  • the silica was polished with a polishing liquid of 16 to 19 to measure the removal rate of silica, as shown in Fig. 5. As can be seen from the figure, the removal rate increases as the amount of silica increases.
  • polishing solution The formulation of the polishing solution is shown in Table 5. The components are simply and uniformly mixed according to the contents listed in Table 5. The pH is adjusted with KOH, and the remaining amount is made by deionized water. Polishing conditions are: downforce 4.0 psi, polishing pad IC1000, polishing disk speed 70 rpm, polishing fluid flow rate 100 ml/min, polishing machine Logitec PM5.
  • Example 6 Effect of Surfactant Species on TEOS, Si 3 N 4 and Poly Removal Rate Polishing silica, Si 3 N 4 and Poly with a polishing solution of 20 to 26, measured for silica, Si 3 N 4 and Poly removal rate, as shown in Figure 6.
  • the removal rate of TEOS and Si3N4 did not change much after the introduction of the nonionic and zwitterionic surfactants compared to the polishing solution 20 without the surfactant added, but the polishing rate of poly was significantly reduced.
  • polishing solution The formulation of the polishing solution is shown in Table 6. The components are simply mixed and mixed according to the contents listed in Table 6. The pH is adjusted with KOH, and the remaining amount is made by deionized water. Polishing conditions are: downforce 4.0 psi, polishing pad IC1000, polishing disk speed 70 rpm, polishing fluid flow rate 100 ml/min, polishing machine Logitec PM5.
  • polishing solution The formulation of the polishing solution is shown in Table 7.
  • the components are simply and uniformly mixed according to the contents listed in Table 7.
  • the pH is adjusted with KOH, and the remaining amount is made by deionized water.
  • Polishing conditions are: downforce 4.0 psi, polishing pad IC1000, polishing disk speed 70 rpm, polishing fluid flow rate 100 ml/min, polishing machine Logitec PM5.
  • polishing solution The square and removal rate are shown in Table 8. The components were simply and uniformly mixed according to the contents listed in Table 8, and the pH was adjusted with KOH, and the remaining amount was made with deionized water. Polishing conditions are: downforce 4.0 psi, polishing pad IC1000, polishing disk speed 70 rpm, polishing fluid flow rate 100 ml/min, polishing machine Logitec PM5.

Abstract

La présente invention concerne l'utilisation d'un composé aminé tel que défini dans la formule 1 pour la préparation d'un liquide de polissage destiné au polissage des matériaux diélectriques en oxyde. Dans la formule 1, R1, R2 et R3 représentent respectivement un hydrogène, (CH2)nCOOR4 ou (CH2)nCONH2, mais ils ne représentent pas simultanément un hydrogène; n vaut 0 ou 1; R4 représente hydrogène, ion métal alcalin, ion ammonium, ou alkyle ayant 1~4 atomes de carbone. La présente invention concerne également un liquide de polissage mécanico-chimique comprenant au moins un composé aminé tel que défini dans la formule 1, de l'oxyde de silicium, un tensio-actif et de l'eau. Le liquide de polissage de la présente invention permet d'augmenter le taux de polissage des matériaux diélectriques en oxyde, et simultanément une teneur en particules abrasives moindre dans le liquide de polissage.
PCT/CN2009/001002 2008-09-05 2009-09-04 Utilisation d'un composé aminé et liquide de polissage mécanico-chimique WO2010034181A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200810042567A CN101665661A (zh) 2008-09-05 2008-09-05 胺类化合物的应用以及一种化学机械抛光液
CN200810042567.X 2008-09-05

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WO2010034181A1 true WO2010034181A1 (fr) 2010-04-01

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Cited By (1)

* Cited by examiner, † Cited by third party
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CN105462503A (zh) * 2015-12-02 2016-04-06 苏州捷德瑞精密机械有限公司 一种纳米级不锈钢精密机械抛光液及其制备方法

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JP2022553244A (ja) 2019-10-15 2022-12-22 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド 研磨組成物およびその使用方法
CN110578165B (zh) * 2019-11-01 2021-01-08 灵宝华鑫铜箔有限责任公司 一种钛质阴极辊用电化学抛光液及利用该抛光液抛光阴极辊的方法
CN113789126B (zh) * 2021-08-17 2022-07-12 万华化学集团电子材料有限公司 一种硅片化学机械抛光液及其应用
CN113861848B (zh) * 2021-11-08 2022-07-12 万华化学集团电子材料有限公司 一种再生晶圆化学机械抛光液及其制备方法
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Citations (7)

* Cited by examiner, † Cited by third party
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WO2000024842A1 (fr) * 1998-10-23 2000-05-04 Arch Specialty Chemicals, Inc. Systeme de boue de polissage chimico-mecanique comprenant une solution activatrice
US20020081865A1 (en) * 2000-05-01 2002-06-27 Wojtczak William A. Polishing slurries for copper and associated materials
US6468913B1 (en) * 2000-07-08 2002-10-22 Arch Specialty Chemicals, Inc. Ready-to-use stable chemical-mechanical polishing slurries
CN1422922A (zh) * 2001-11-28 2003-06-11 不二见株式会社 磁盘基材的抛光组合物和使用该组合物的抛光方法
CN101044600A (zh) * 2004-10-28 2007-09-26 卡伯特微电子公司 包含表面活性剂的化学机械抛光(cmp)组合物
US20080105652A1 (en) * 2006-11-02 2008-05-08 Cabot Microelectronics Corporation CMP of copper/ruthenium/tantalum substrates
WO2009032065A1 (fr) * 2007-08-28 2009-03-12 Cabot Microelectronics Corporation Composition de cmp du cuivre contenant un polyélectrolyte ionique et procédé de cmp

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000024842A1 (fr) * 1998-10-23 2000-05-04 Arch Specialty Chemicals, Inc. Systeme de boue de polissage chimico-mecanique comprenant une solution activatrice
US20020081865A1 (en) * 2000-05-01 2002-06-27 Wojtczak William A. Polishing slurries for copper and associated materials
US6527819B2 (en) * 2000-05-01 2003-03-04 Advanced Technology Materials, Inc. Polishing slurries for copper and associated materials
US6468913B1 (en) * 2000-07-08 2002-10-22 Arch Specialty Chemicals, Inc. Ready-to-use stable chemical-mechanical polishing slurries
CN1422922A (zh) * 2001-11-28 2003-06-11 不二见株式会社 磁盘基材的抛光组合物和使用该组合物的抛光方法
CN101044600A (zh) * 2004-10-28 2007-09-26 卡伯特微电子公司 包含表面活性剂的化学机械抛光(cmp)组合物
US20080105652A1 (en) * 2006-11-02 2008-05-08 Cabot Microelectronics Corporation CMP of copper/ruthenium/tantalum substrates
WO2009032065A1 (fr) * 2007-08-28 2009-03-12 Cabot Microelectronics Corporation Composition de cmp du cuivre contenant un polyélectrolyte ionique et procédé de cmp

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105462503A (zh) * 2015-12-02 2016-04-06 苏州捷德瑞精密机械有限公司 一种纳米级不锈钢精密机械抛光液及其制备方法

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