WO2010033469A3 - Dielectric material treatment saystem and method of operating - Google Patents
Dielectric material treatment saystem and method of operating Download PDFInfo
- Publication number
- WO2010033469A3 WO2010033469A3 PCT/US2009/056871 US2009056871W WO2010033469A3 WO 2010033469 A3 WO2010033469 A3 WO 2010033469A3 US 2009056871 W US2009056871 W US 2009056871W WO 2010033469 A3 WO2010033469 A3 WO 2010033469A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- saystem
- operating
- dielectric material
- material treatment
- low
- Prior art date
Links
- 239000003989 dielectric material Substances 0.000 title 1
- 230000005855 radiation Effects 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200980136347.6A CN102159330B (en) | 2008-09-16 | 2009-09-14 | Dielectric material treatment system and method of operating |
KR1020117008718A KR101690804B1 (en) | 2008-09-16 | 2009-09-14 | Dielectric material treatment system and method of operating |
JP2011527032A JP2012503313A (en) | 2008-09-16 | 2009-09-14 | Dielectric material processing system and method of operating the system |
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/211,675 US20100067886A1 (en) | 2008-09-16 | 2008-09-16 | Ir laser optics system for dielectric treatment module |
US12/211,681 | 2008-09-16 | ||
US12/211,675 | 2008-09-16 | ||
US12/211,598 US20100065758A1 (en) | 2008-09-16 | 2008-09-16 | Dielectric material treatment system and method of operating |
US12/211,681 US20100068897A1 (en) | 2008-09-16 | 2008-09-16 | Dielectric treatment platform for dielectric film deposition and curing |
US12/211,640 US8895942B2 (en) | 2008-09-16 | 2008-09-16 | Dielectric treatment module using scanning IR radiation source |
US12/211,598 | 2008-09-16 | ||
US12/211,640 | 2008-09-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2010033469A2 WO2010033469A2 (en) | 2010-03-25 |
WO2010033469A3 true WO2010033469A3 (en) | 2010-05-14 |
Family
ID=42040085
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2009/056871 WO2010033469A2 (en) | 2008-09-16 | 2009-09-14 | Dielectric material treatment saystem and method of operating |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2012503313A (en) |
KR (1) | KR101690804B1 (en) |
CN (1) | CN102159330B (en) |
WO (1) | WO2010033469A2 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120225568A1 (en) * | 2011-03-03 | 2012-09-06 | Tokyo Electron Limited | Annealing method and annealing apparatus |
CN102621107A (en) * | 2012-03-09 | 2012-08-01 | 中国科学院长春光学精密机械与物理研究所 | In-situ optical measurement device for aerospace material space environment irradiation measurement |
CN104752304B (en) * | 2013-12-31 | 2018-08-24 | 北京北方华创微电子装备有限公司 | A kind of reaction chamber and plasma processing device |
CN105336668B (en) * | 2014-06-27 | 2020-09-08 | 中芯国际集成电路制造(上海)有限公司 | Method for forming dielectric layer |
CN104209254B (en) * | 2014-08-15 | 2016-05-11 | 上海华力微电子有限公司 | For the ultraviolet light polymerization process of porous low dielectric constant material |
WO2016148855A1 (en) * | 2015-03-19 | 2016-09-22 | Applied Materials, Inc. | Method and apparatus for reducing radiation induced change in semiconductor structures |
CN111263977B (en) | 2017-10-30 | 2023-09-26 | 应用材料公司 | Multi-zone spot heating in EPI |
KR102249802B1 (en) * | 2018-07-13 | 2021-05-10 | 세메스 주식회사 | Appparatus for processing substrate |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7090966B2 (en) * | 2003-03-26 | 2006-08-15 | Seiko Epson Corporation | Process of surface treatment, surface treating device, surface treated plate, and electro-optic device, and electronic equipment |
US20060249078A1 (en) * | 2005-05-09 | 2006-11-09 | Thomas Nowak | High efficiency uv curing system |
US20070105401A1 (en) * | 2005-11-09 | 2007-05-10 | Tokyo Electron Limited | Multi-step system and method for curing a dielectric film |
US20070109003A1 (en) * | 2005-08-19 | 2007-05-17 | Kla-Tencor Technologies Corp. | Test Pads, Methods and Systems for Measuring Properties of a Wafer |
US20080063809A1 (en) * | 2006-09-08 | 2008-03-13 | Tokyo Electron Limited | Thermal processing system for curing dielectric films |
US20080067425A1 (en) * | 2006-03-17 | 2008-03-20 | Applied Materials, Inc. | Apparatus and method for exposing a substrate to uv radiation using asymmetric reflectors |
US7405168B2 (en) * | 2005-09-30 | 2008-07-29 | Tokyo Electron Limited | Plural treatment step process for treating dielectric films |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0770535B2 (en) * | 1986-06-25 | 1995-07-31 | ソニー株式会社 | Method for manufacturing semiconductor device |
JPH01103824A (en) * | 1988-06-24 | 1989-04-20 | Fujitsu Ltd | Laser annealing process |
JPH0562924A (en) * | 1991-09-04 | 1993-03-12 | Sony Corp | Laser annealing device |
TW466772B (en) * | 1997-12-26 | 2001-12-01 | Seiko Epson Corp | Method for producing silicon oxide film, method for making semiconductor device, semiconductor device, display, and infrared irradiating device |
US6121130A (en) * | 1998-11-16 | 2000-09-19 | Chartered Semiconductor Manufacturing Ltd. | Laser curing of spin-on dielectric thin films |
CN1421904A (en) * | 2001-09-06 | 2003-06-04 | 联华电子股份有限公司 | Production process of film of low-dielectric constant material |
KR100944379B1 (en) * | 2003-06-02 | 2010-02-26 | 주성엔지니어링(주) | Apparatus for wafer loading, and the method of wafer loading using the same |
JP4361762B2 (en) * | 2003-06-11 | 2009-11-11 | 東京エレクトロン株式会社 | Heat treatment method |
JP2005032740A (en) * | 2003-07-07 | 2005-02-03 | Dainippon Screen Mfg Co Ltd | Apparatus and method for forming film |
US20080132045A1 (en) * | 2004-11-05 | 2008-06-05 | Woo Sik Yoo | Laser-based photo-enhanced treatment of dielectric, semiconductor and conductive films |
US20060165904A1 (en) * | 2005-01-21 | 2006-07-27 | Asm Japan K.K. | Semiconductor-manufacturing apparatus provided with ultraviolet light-emitting mechanism and method of treating semiconductor substrate using ultraviolet light emission |
US7589336B2 (en) * | 2006-03-17 | 2009-09-15 | Applied Materials, Inc. | Apparatus and method for exposing a substrate to UV radiation while monitoring deterioration of the UV source and reflectors |
-
2009
- 2009-09-14 CN CN200980136347.6A patent/CN102159330B/en not_active Expired - Fee Related
- 2009-09-14 WO PCT/US2009/056871 patent/WO2010033469A2/en active Application Filing
- 2009-09-14 JP JP2011527032A patent/JP2012503313A/en active Pending
- 2009-09-14 KR KR1020117008718A patent/KR101690804B1/en active IP Right Grant
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7090966B2 (en) * | 2003-03-26 | 2006-08-15 | Seiko Epson Corporation | Process of surface treatment, surface treating device, surface treated plate, and electro-optic device, and electronic equipment |
US20060249078A1 (en) * | 2005-05-09 | 2006-11-09 | Thomas Nowak | High efficiency uv curing system |
US20070109003A1 (en) * | 2005-08-19 | 2007-05-17 | Kla-Tencor Technologies Corp. | Test Pads, Methods and Systems for Measuring Properties of a Wafer |
US7405168B2 (en) * | 2005-09-30 | 2008-07-29 | Tokyo Electron Limited | Plural treatment step process for treating dielectric films |
US20070105401A1 (en) * | 2005-11-09 | 2007-05-10 | Tokyo Electron Limited | Multi-step system and method for curing a dielectric film |
US20080067425A1 (en) * | 2006-03-17 | 2008-03-20 | Applied Materials, Inc. | Apparatus and method for exposing a substrate to uv radiation using asymmetric reflectors |
US20080063809A1 (en) * | 2006-09-08 | 2008-03-13 | Tokyo Electron Limited | Thermal processing system for curing dielectric films |
Also Published As
Publication number | Publication date |
---|---|
JP2012503313A (en) | 2012-02-02 |
KR20110081981A (en) | 2011-07-15 |
WO2010033469A2 (en) | 2010-03-25 |
CN102159330B (en) | 2014-11-12 |
CN102159330A (en) | 2011-08-17 |
KR101690804B1 (en) | 2016-12-28 |
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