WO2010026655A1 - Dispositif de memoire - Google Patents

Dispositif de memoire Download PDF

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Publication number
WO2010026655A1
WO2010026655A1 PCT/JP2008/066117 JP2008066117W WO2010026655A1 WO 2010026655 A1 WO2010026655 A1 WO 2010026655A1 JP 2008066117 W JP2008066117 W JP 2008066117W WO 2010026655 A1 WO2010026655 A1 WO 2010026655A1
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WIPO (PCT)
Prior art keywords
semiconductor region
diode
impurity
conductivity type
storage device
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PCT/JP2008/066117
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English (en)
Japanese (ja)
Inventor
賢一 室岡
裕士 菅野
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株式会社 東芝
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Priority to PCT/JP2008/066117 priority Critical patent/WO2010026655A1/fr
Publication of WO2010026655A1 publication Critical patent/WO2010026655A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only

Definitions

  • the present invention relates to a memory device using a diode and a resistance change element.
  • ReRAM in which a memory cell is composed of a non-ohmic element typified by a diode and a resistance change material has been proposed. Since this ReRAM can be configured without using charge accumulation for storage and without using a MOSFET for a memory cell, it is expected that higher integration than the conventional trend can be achieved. ing.
  • diodes used in ReRAM memory cells need to satisfy certain criteria regarding the allowable value of current that can flow in the forward direction and the allowable value of leak current that flows in the reverse direction, depending on the characteristics of the resistance change material. There is.
  • the present invention has been made in view of the above circumstances, and its object is to provide a highly integrated memory device that has a steep forward current-voltage characteristic, is easy to manufacture, and is highly reliable. There is to provide to.
  • a storage device includes a plurality of row lines arranged in parallel to each other, a plurality of column lines arranged in parallel to each other so as to intersect the row lines, and the row lines.
  • a memory cell including a resistance change element and a diode connected in series with the variable resistance element, and the diode includes a first semiconductor region including an impurity of a first conductivity type;
  • a stack of a second semiconductor region containing a first conductivity type impurity having a lower concentration than the first semiconductor region and a third semiconductor region containing a second conductivity type impurity, and the impurity concentration of the second semiconductor region Includes a portion having a higher concentration than the concentration in the first adjacent portion to the third semiconductor region and the second adjacent portion to the first semiconductor region.
  • FIG. 1 is a cross-sectional view of a memory cell constituting a memory device according to an embodiment of the present invention.
  • FIG. 2A is an impurity concentration distribution diagram of a diode portion in the memory cell of FIG. 2B is another impurity concentration distribution diagram of the diode portion of FIG. 2C is another impurity concentration distribution diagram of the diode portion of FIG.
  • FIG. 3 is a characteristic diagram showing voltage / current characteristics of the diode of FIG. 4A is a schematic diagram showing an example of the distribution of impurity atoms in the (n-type) region 18 of the diode of FIG. 4B is a schematic diagram showing another example of the distribution of impurity atoms in the (n-type) region 18 of the diode of FIG.
  • FIG. 4C is a schematic diagram showing still another example of the distribution of impurity atoms in the (n-type) region 18 of the diode of FIG.
  • FIG. 5 is a perspective view of a storage device according to an embodiment of the present invention.
  • FIG. 6 is a circuit diagram of a storage device according to an embodiment of the present invention.
  • FIG. 7 is a block diagram of a storage device according to an embodiment of the present invention.
  • FIG. 8 is a perspective view of a chip in which the memory device according to the embodiment of the present invention is integrated.
  • FIG. 9A is a cross-sectional view illustrating a manufacturing process of the memory device according to the embodiment of the present invention.
  • FIG. 9B is a cross-sectional view of the memory device in the process following FIG. 9A.
  • FIG. 9A is a cross-sectional view illustrating a manufacturing process of the memory device according to the embodiment of the present invention.
  • FIG. 9B is a cross-sectional view of the memory device in
  • FIG. 9C is a cross-sectional view of the memory device in the process following FIG. 9B.
  • FIG. 9D is a cross-sectional view of the memory device in the process following FIG. 9C.
  • FIG. 9E is a cross-sectional view of the memory device in the process following FIG. 9D.
  • FIG. 9F is a cross-sectional view of the memory device in the process following FIG. 9E.
  • FIG. 9G is a cross-sectional view of the memory device in the process following FIG. 9F.
  • FIG. 9H is a cross-sectional view of the memory device in the process following FIG. 9G.
  • FIG. 9I is a cross-sectional view of the memory device in the process following FIG. 9H.
  • FIG. 9J is a cross-sectional view of the memory device in the process following FIG. 9I.
  • FIG. 9K is a cross-sectional view of the memory device in the process following FIG. 9J.
  • FIG. 1 is a cross-sectional configuration diagram of a memory cell portion of a memory device according to the first embodiment of the present invention.
  • the memory cell 3 includes a resistance change element 11, a diode 12, and metal electrodes 13, 14, and 15, and is connected to each other in series.
  • the resistance change element 11 is formed of ZnMn 2 O 4 having a film thickness of 10 nm, one end is connected to a laminated wiring of W and TiN via a TiN electrode, and the other end is made of Si pn via a TiN electrode. It is connected to the p side of the junction diode. The n side of the pn junction diode is connected to a wiring made of W and TiN via a TiN electrode.
  • the resistance change element is an element that transits at least two resistance values of a low resistance state and a high resistance state, and is ZnMn 2 O 4 , NiO, TiO 2 , SrZrO 3 , Pr 0.7 Ca 0.3. it can be composed of a thin film made of a single material such as MnO 3.
  • a resistance change element in a high resistance state transitions to a low resistance state when a voltage exceeding a certain level is applied, and a resistance change element in a low resistance state transitions to a high resistance state when a current exceeding a certain level flows. It is known to do.
  • the metal electrodes 13, 14 and 15 are made of TiN and have a function as a so-called barrier metal that suppresses interdiffusion of constituent atoms between not only a conductive material but also a resistance change element, a diode, and a wiring. Yes.
  • the film configuration of the diode is, for example, p + / n ⁇ . / N + .
  • the impurity concentration in the n ⁇ semiconductor region 18 sandwiched between the n + semiconductor region 16 and the p + semiconductor region 17 shown in FIG. 1A is distributed, and the side close to the p + semiconductor region 17 or the n + semiconductor The impurity concentration at the center is higher than that near the region 16. Therefore, when the impurity concentration distribution in the AA ′ cross section of FIG. 1 is graphed, it is as shown in FIG. 2A.
  • I f R H I reset R L + f -1 (I reset ) -f -1 (I f )
  • I f RH exceeds the voltage at which the variable resistance element transitions from the high-resistance state to the low-resistance state, it returns to the low-resistance state again despite the reset operation. Occurs and the memory cell does not perform a desired operation.
  • f ⁇ 1 (I reset ) ⁇ f ⁇ 1 (I f ) is small, that is, the gradient of f ⁇ 1 . The looser the better.
  • f ⁇ 1 is an inverse function of the forward current-voltage characteristic f of the diode, it can be said that this condition is more desirable as the forward current-voltage characteristic of the diode is steeper.
  • the present inventors have studied a means for making the forward current-voltage characteristics steep while keeping the thickness of the diode constant. Specifically, paying attention to the distribution of impurity atoms in the n ⁇ semiconductor region 18, assuming the case where the n ⁇ semiconductor region does not have a uniform impurity concentration, the newly developed device simulator is used to determine the electrical characteristics of the diode. investigated.
  • the characteristics of the newly developed device simulator will be briefly described.
  • the biggest feature of this device simulator is that it is possible to perform calculations that clearly capture the positions of individual impurity atoms, which was difficult to handle with conventional device simulators, corresponding to the miniaturization of elements. is there.
  • the size of the semiconductor region is 22 nm ⁇ 22 nm ⁇ 40 nm and the impurity concentration is 1 ⁇ 10 17 cm ⁇ 3
  • the number of contained impurity atoms is about two.
  • device characteristics are determined by such a small number of impurity atoms, it is not appropriate to set a continuous uniform impurity concentration over the entire semiconductor region as in a conventional device simulator. It is important to consider the correct distribution.
  • the conventional device simulator is a method in which the impurity concentration is set in an arbitrary region and the uniform potential field calculated from this concentration is used. It is possible to calculate by setting the position individually and considering the potential field created by each impurity atom. By using this function, simulation considering the discrete distribution of the impurity position of a semiconductor device with an extremely fine structure has become possible for the first time.
  • FIG. 3 shows the calculation result of the forward current-voltage characteristic of the diode using this device simulator.
  • Curves A, B, C in the graph of FIG. 3 correspond to the forward current-voltage characteristics corresponding to the n-type region impurity atom distribution of the three types of diodes shown in FIGS. 4A, 4B, 4C. Yes.
  • the n-type region corresponds to the n ⁇ semiconductor region 18 of FIG. 1, the left side of the n-type region is connected to the p + semiconductor region 17, and the right side of the n-type region is connected to the n + semiconductor region 16 (not shown). Will be.
  • the diode has a cross section of 22 nm ⁇ 22 nm, the thickness of both the p-type region and the n-type region is 50 nm, and the impurity concentration of the p-type region is set to 1 ⁇ 10 20 cm ⁇ 3 .
  • n - When the thickness and impurity concentration of the semiconductor region 18 constant, n - impurity atoms in the semiconductor region 18, or near the p + semiconductor region, the distribution near the n + semiconductor region A steep current-voltage characteristic can be obtained in the case of being distributed in the center of the n ⁇ semiconductor region than in the case where the n ⁇ semiconductor region is distributed.
  • n ⁇ semiconductor region when the n ⁇ semiconductor region is viewed macroscopically, a configuration using a diode having a central portion with a higher impurity concentration than the side closer to the p + semiconductor region 17 and the side closer to the n + semiconductor region 16. By doing so, it becomes easy to secure an operation margin at the time of resetting, and it becomes possible to provide a storage device with good operation stability.
  • the impurities at both ends of the n ⁇ semiconductor region effects of atomic distribution is not critical, e.g., FIG. 2B, as shown in 2C, when the shape impurity concentration distribution has a convex portion at the center portion, the n + semiconductor region than the side closer to the p + semiconductor region It has been found that the forward current-voltage characteristics are sharpened even when the concentration on the near side is high, or when the concentration on the side near the p + semiconductor region is higher than the side near the n + semiconductor region.
  • the conductivity type at the center of the diode is n-type, but it may be p-type.
  • the conductivity type at both ends of the diode can be switched between n-type and p-type. That is, a configuration other than p + / n ⁇ / n + , such as p + / p ⁇ / n + , n + / n ⁇ / p + , n + / p ⁇ / p +, may be used.
  • the impurity atom distribution in the semiconductor region does not need to be defined with the crystal lattice position of the atoms constituting the semiconductor as a unit, and the average number of impurity atoms in a region having a size of about 2 to 3 nm is significant. . This is based on the following physical considerations. As described above, carriers flowing through the diode follow an electric potential field formed in the semiconductor region. In the first approximation, the effective spread of the potential field created by the impurity atoms can be defined using the so-called Bohr radius.
  • the dielectric constant epsilon r 11.7 the effective mass ratio m e / m is known to be about 0.2 to 0.3 Bohr radius 2 ⁇ 3 nm It becomes.
  • the current flowing through the diode is determined, and the above-mentioned near the p + semiconductor region or n + semiconductor region is These may be considered as a region of 2 to 3 nm from the interface with the p + semiconductor region and a region of 2 to 3 nm from the interface with the n + semiconductor region, respectively. This region is referred to as an adjacent portion in the present invention.
  • the thickness of the low impurity concentration semiconductor region of the diode of this embodiment is only about 100 nm or less.
  • Depletion layer distance in semiconductor approximately 1 ⁇ Vd / eN 1/2 , ⁇ : dielectric constant of semiconductor, Vd: built-in potential of semiconductor, e: elementary charge, N: impurity concentration
  • the depletion layer extends to the low impurity concentration semiconductor region, and the desired forward current is secured by utilizing the small thickness of the low impurity concentration semiconductor region.
  • the characteristics of the diode obtained according to the present invention are significant when used in combination with a variable resistance element.
  • FIG. 5 is a perspective view of the memory cell array of the memory device according to the first embodiment of the present invention.
  • a plurality of row lines 1 arranged in parallel and a plurality of column lines 2 arranged in parallel face each other so that the line directions intersect, and a memory cell 3 composed of a resistance change element and a diode is formed at each intersection.
  • the row line is referred to as a word line and the column line is referred to as a bit line in accordance with a normal MOS type memory cell.
  • the pitch between the word lines and the bit lines is 44 nm, that is, a line having a line width of 22 nm and a space of 22 nm, and the cell section has a cross section of 22 nm ⁇ 22 nm.
  • the word line and the bit line are merely line and space patterns, and the positional relationship in which the word line and the bit line cross each other is sufficient, and a shift in the word line direction and the bit line direction is considered. There is no need. Therefore, the alignment accuracy in the cell at the time of manufacture can be made very loose, and manufacture can be performed easily.
  • FIG. 6 is a circuit diagram in which a part of a cross-point type memory cell using a resistance change element and a diode constituting the memory device according to the first embodiment of the present invention is extracted.
  • a memory cell 3 composed of a resistance change element and a diode is connected to each intersection of the word line 1 and the bit line 2.
  • the word line 1 is connected to the row decoder 4, and the bit line 2 is connected to the column decoder 5. Yes.
  • the resistance change element is an element that transitions between at least two resistance values, a low resistance state and a high resistance state, and the resistance change element in the high resistance state is low when a certain voltage or more is applied. It is known that a resistance change element that transitions to a resistance state and transitions to a low resistance state transitions to a high resistance state when a certain current or more flows.
  • the row decoder 4 selects the third row from the top, and the column decoder 5 selects the second column from the left.
  • the selected word line is set to + V that is “High” potential and the selected bit line is set to 0 V that is “Low” potential (ground) so that the diode of the selected cell is in the forward direction.
  • the non-selected word line is set to 0V (ground potential) which is “Low” potential, and the non-selected bit line is set to + V which is “High” potential.
  • the voltage is a relative value
  • the portion drawn as the ground potential does not necessarily have to be 0 V
  • the difference between the “High” potential and the “Low” potential may be a predetermined voltage.
  • the value of V is positive, and when a variable resistance element is used, V read ⁇ V between the voltage V set used for writing, the voltage V reset used for erasing, and the voltage V read used for reading, due to the above-described characteristics.
  • the relationship of reset ⁇ V set is established.
  • the diode since the diode is in the forward direction, a voltage obtained by subtracting the ON voltage of the diode from the applied voltage is applied to the resistance change element, and the current can sufficiently flow. According to such a principle, interference between cells can be prevented, and reading / writing (erasing) can be performed only on a selected cell.
  • FIG. 7 is a block diagram of the storage device according to the first embodiment of the present invention.
  • a row decoder 32 is connected to each word line (row wiring) of the memory cell array 31, and a column decoder 33 is connected to each bit line (column wiring).
  • the row decoder 32 and the column decoder 33 select a word line / bit line connected to a read / write cell in the memory cell array based on the address information from the upper block 34.
  • the power supply 35 generates a predetermined voltage combination corresponding to each operation of reading, writing, and erasing, and sends it to the row recorder 32 and the column decoder 33.
  • FIG. 8 is a perspective view of a chip in which the memory device according to the first embodiment of the present invention is integrated into an IC.
  • a CMOS circuit 52 including a wiring layer is formed on a normal Si substrate 51 by a commonly used process, and a layer 53 including a plurality of memory cell portions 54 is formed thereon. 8 corresponds to the memory cell array 31 of FIG. 7, and a portion called a peripheral circuit in a normal memory including the decoder and upper block of FIG. 7 is shown in FIG. It is included in the CMOS circuit 52.
  • the CMOS circuit 52 may be designed and manufactured with a design rule of 90 nm, for example, which is looser than the wiring of the memory cell portion 54 except for the connection portion with the memory cell portion 54.
  • One memory cell portion occupies an area of about 22 ⁇ m square and includes 512 ⁇ 512 intersections.
  • Each memory cell portion 54 has an electrical connection portion with the CMOS circuit 52 around the memory cell portion 54, and blocks each having the memory cell portion 54 and the peripheral connection portion as a unit are arranged in a matrix.
  • an input / output unit 55 of the device which includes a terminal having a through hole formed in the layer 53 including the memory cell unit 54 and electrically coupled to the input / output unit of the CMOS circuit 52, is shown in FIG. Thus, it is formed at the end of the layer 53 including the memory cell portion 54.
  • the operation time can be shortened and the number of cells that can be simultaneously read and written can be increased without increasing the chip area.
  • the input / output unit 55 of the device is bonded to the lead frame in the packaging process in the same manner as a normal semiconductor device.
  • ZnMn 2 O 4 is used as the resistance change material used for the memory operation.
  • other materials such as NiO, TiO 2 , SrZrO 3 , Pr 0.7 Ca 0.3 MnO 3, and the like are used. It is also possible.
  • TiN is used as the electrode in contact with the resistance change material, but other materials such as Pt, W, WN, TaN, Nb-doped TiO 2, etc. can also be used.
  • a Si PN junction diode is used as the diode, a SiGe alloy PN junction diode can also be used.
  • the diode constituting the ReRAM memory cell can have a large forward allowable current and a steep forward current-voltage characteristic, which is easy to manufacture.
  • a highly reliable highly integrated memory device can be provided at low cost.
  • FIGS. 9A to 9K are cross-sectional views along the OX direction in FIG. 1
  • FIGS. 9J and 9K are cross-sectional views along the OY direction in FIG.
  • a substrate on which a desired CMOS circuit layer 102 is formed on one side of a Si substrate 101 having a thickness of 720 ⁇ m is prepared using a normal CMOS process.
  • the CMOS circuit layer 102 includes a connection portion to a memory cell array in addition to a normal MOSFET and a multilayer wiring.
  • an insulating film 103 made of SiO 2 and having a thickness of 300 nm is formed on the substrate by a CVD method using TEOS as a main material.
  • a composite film 104 of TiN having a thickness of 10 nm and W having a thickness of 50 nm is continuously formed by a sputtering method.
  • a TiN film 105 having a thickness of 10 nm is formed by a sputtering method.
  • the TiN film 105 functions as a barrier metal that suppresses the diffusion of unnecessary impurities into the semiconductor film constituting the diode.
  • an amorphous Si film is formed using an LPCVD method using SiH 4 as a main material, and a desired semiconductor region is formed using an ion implantation method.
  • arsenic ions are implanted at an acceleration voltage of 1 kV to form an n + semiconductor region 106 containing about 10 20 cm ⁇ 3 of arsenic.
  • arsenic include degree 10 17 cm -3 on average, the concentration of arsenic in portions of about 50nm from the membrane top
  • An n ⁇ semiconductor region 107 having a thickness of 90 nm and having a high concentration is formed.
  • boron is ion-implanted at an acceleration voltage of 1 kV, and the upper portion of the n ⁇ semiconductor region 107 formed previously is a p + semiconductor region 108 having a thickness of 10 nm containing about 10 20 cm ⁇ 3 of boron.
  • the film thicknesses of the n + semiconductor region 106, the n ⁇ semiconductor region 107, and the p + semiconductor region 108 shown here are high-temperature treatments for the purpose of crystallization of amorphous Si and activation of impurities.
  • the film thickness of the n + semiconductor region 106 and the p + semiconductor region 108 is increased by about 20 nm, and the film thickness of the n ⁇ semiconductor region 107 is 40 nm. Decrease degree.
  • the above-mentioned film thickness is set in consideration of these effects in advance.
  • a TiN film 109 with a thickness of 10 nm, a resistance change material film 110 made of ZnMn 2 O 4 with a thickness of 10 nm, and a TiN film 111 with a thickness of 10 nm are successively formed by a sputtering method.
  • the TiN films 109 and 111 serve as electrodes of the resistance change material film 110 and function as a barrier metal.
  • an insulating film 112 made of SiO 2 and having a thickness of 150 nm is formed by a CVD method using TEOS as a main material.
  • a resist pattern having a pitch of 44 nm is formed by using the technique of imprint lithography, and the resulting resist pattern (not shown) is used as a mask to react using CHF 3 and CO gas.
  • the SiO 2 film 112 is patterned by ion etching.
  • the TiN film 111, the resistance change material film 110, and the TiN film are formed by reactive ion etching using Cl 2 , Ar, and CO gas using the formed SiO 2 film pattern as an etching mask.
  • 109, p + semiconductor region 108, n ⁇ semiconductor region 107, n + semiconductor region 106, and TiN film 105 are sequentially patterned.
  • the TiN and W composite film 104 is patterned by reactive ion etching using CHF 3 and SF 6 gas.
  • an insulating film 115 made of SiO 2 is formed by a CVD method using TEOS as a main material.
  • the SiO 2 films 112 and 115 are planarized by the CMP method using the TiN film 111 as a stopper.
  • a composite film 116 of TiN having a thickness of 10 nm and W having a thickness of 50 nm is continuously formed by a sputtering method.
  • an insulating film 117 made of SiO 2 is formed by a CVD method using TEOS as a main material.
  • the line of sight of the cross section is rotated 90 degrees into the wafer surface, and as shown in FIG. 9J (cross section parallel to the OY direction in FIG. 5), a resist pattern with a pitch of 44 nm is used using the imprint lithography technique.
  • the SiO 2 film 117 is patterned by reactive ion etching using CHF 3 and CO gas using the obtained resist pattern as a mask.
  • the composite film 116 of TiN and W is patterned by reactive ion etching using CHF 3 and SF 6 gas using the formed SiO 2 film pattern as an etching mask. Subsequently, by reactive ion etching using Cl 2 , Ar, and CO gas, the TiN film 111, the resistance change material film 110, the TiN film 109, the p + semiconductor region 108, the n ⁇ semiconductor region 107, and the n + semiconductor region 106.
  • the TiN film 105 is sequentially patterned to form a memory cell portion. In this step, the n + semiconductor region 106 and the TiN film 105 may not be completely separated from each other by etching.
  • a SiO 2 film 118 is formed on the entire surface of the wafer using a silicon oxide film that can be spin-coated while filling the trench.
  • a connection portion between the CMOS circuit 52 and the composite films 104 and 116 of TiN and W is opened by a lithography process and reactive ion etching, and is buried by W using a CVD method. Unnecessary portions above W are removed by an etch back process.
  • a desired structure can be obtained by repeating the above steps. Finally, a heat treatment is performed at 800 ° C. for 5 seconds, and after crystallization of amorphous Si and activation of impurities are collectively performed, a so-called passivation film is formed, and a wiring connection portion serving as an input / output portion is formed. A storage device is completed by performing so-called post-processes such as inspection and dicing.
  • arsenic is used as the n-type impurity in the step of forming the diode, but phosphorus may be used.
  • phosphorus may be used.
  • a diode having a steep forward current-voltage characteristic that constitutes a ReRAM memory cell can be realized, so that a highly integrated memory device that is easy to manufacture and highly reliable can be provided at low cost.

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Abstract

L'invention concerne un dispositif de mémoire comprenant une pluralité de rangées (1) disposées en parallèle les unes aux autres, une pluralité de colonnes (2) disposées en parallèle les unes aux autres et transversalement par rapport aux rangées (1), ainsi que des cellules de mémoire (3) disposées à des intersections respectives entre les rangées (1) et les colonnes (2), chaque cellule comprenant un élément de changement de résistance (11) et une diode (12) connectée en série audit élément (11). Cette diode (12) comprend des couches stratifiées d'une première région semi-conductrice (16) contenant une impureté d'un premier type conductivité, d'une deuxième région semi-conductrice (18) contenant une impureté du premier type de conductivité dans une concentration inférieure à celle de la première région semi-conductrice (16), et d'une troisième région semi-conductrice (17) contenant une impureté d'un deuxième type de conductivité, la deuxième région semi-conductrice (18) comprenant une partie dans laquelle la concentration d'impureté est supérieure aux concentrations dans une première partie adjacente à la troisième région semi-conductrice (16) et dans une deuxième partie adjacente à la première région semi-conductrice (17).
PCT/JP2008/066117 2008-09-05 2008-09-05 Dispositif de memoire WO2010026655A1 (fr)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011198959A (ja) * 2010-03-18 2011-10-06 Toshiba Corp 不揮発性記憶装置の製造方法
US8084830B2 (en) 2009-02-24 2011-12-27 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
US20120043517A1 (en) * 2010-08-17 2012-02-23 Kabushiki Kaisha Toshiba Nonvolatile semiconductor storage device

Citations (4)

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