WO2010022526A3 - Superluminescent diode, or amplifier chip - Google Patents

Superluminescent diode, or amplifier chip Download PDF

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Publication number
WO2010022526A3
WO2010022526A3 PCT/CH2009/000283 CH2009000283W WO2010022526A3 WO 2010022526 A3 WO2010022526 A3 WO 2010022526A3 CH 2009000283 W CH2009000283 W CH 2009000283W WO 2010022526 A3 WO2010022526 A3 WO 2010022526A3
Authority
WO
WIPO (PCT)
Prior art keywords
optical device
energy
heterostructure
amplifier chip
working temperature
Prior art date
Application number
PCT/CH2009/000283
Other languages
French (fr)
Other versions
WO2010022526A2 (en
Inventor
Valerio Laino
Christian Velez
Original Assignee
Exalos Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Exalos Ag filed Critical Exalos Ag
Publication of WO2010022526A2 publication Critical patent/WO2010022526A2/en
Publication of WO2010022526A3 publication Critical patent/WO2010022526A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0045—Devices characterised by their operation the devices being superluminescent diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

In accordance with a first aspect of the invention, an optical device is presented, the optical device being a superluminescent light emitting diode or amplifier chip, the optical device comprising a semiconductor quantum well heterostructure (62) embedded in a cladding structure (63-66), and a current injector for injecting charge carriers in the heterostructure, so that radiation reaching the heterostructure is amplifiable by stimulated emission. The heterostructure defines a first and a second discrete energy level in a conduction band, the first and second energy levels spaced apart from each other by more than a thermal excitation energy kT w at a working temperature T w of the optical device, with essentially no energy levels between the first and the second energy level, and the higher one of the first and second energy levels being spaced from a conduction energy band of the cladding structure by more than the thermal excitation energy at the working temperature, the optical device further comprising feedback suppressing means.
PCT/CH2009/000283 2008-08-26 2009-08-26 Superluminescent diode, or amplifier chip WO2010022526A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US9189608P 2008-08-26 2008-08-26
US61/091,896 2008-08-26

Publications (2)

Publication Number Publication Date
WO2010022526A2 WO2010022526A2 (en) 2010-03-04
WO2010022526A3 true WO2010022526A3 (en) 2010-07-15

Family

ID=41647182

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CH2009/000283 WO2010022526A2 (en) 2008-08-26 2009-08-26 Superluminescent diode, or amplifier chip

Country Status (1)

Country Link
WO (1) WO2010022526A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7147560B2 (en) * 2016-07-04 2022-10-05 ソニーグループ株式会社 Superluminescence diode and display device
GB201813343D0 (en) * 2018-08-15 2018-09-26 Univ Manchester Electrically controlled active wave guides
GB2580956B (en) * 2019-01-31 2023-01-25 Exalos Ag Amplified Spontaneous Emission Semiconductor Source

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992016962A2 (en) * 1991-03-11 1992-10-01 The Boeing Company Single quantum well led
EP1146615A1 (en) * 1999-09-22 2001-10-17 Mitsubishi Chemical Corporation Luminous element and luminous element module
US20020020847A1 (en) * 1997-08-13 2002-02-21 Mitsubishu Chemical Corporation Compound semiconductor light emitting device and method of fabricating the same
US6560264B1 (en) * 1999-06-30 2003-05-06 Fuji Photo Film Co., Ltd. Stripe type semiconductor light emitting element having InGaN active layer, combined with optical resonator including wavelength selection element
EP1355364A1 (en) * 2001-01-05 2003-10-22 Japan Science and Technology Corporation Optical semiconductor element utilizing optical transition between zno heterostructure sub-bands

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992016962A2 (en) * 1991-03-11 1992-10-01 The Boeing Company Single quantum well led
US20020020847A1 (en) * 1997-08-13 2002-02-21 Mitsubishu Chemical Corporation Compound semiconductor light emitting device and method of fabricating the same
US6560264B1 (en) * 1999-06-30 2003-05-06 Fuji Photo Film Co., Ltd. Stripe type semiconductor light emitting element having InGaN active layer, combined with optical resonator including wavelength selection element
EP1146615A1 (en) * 1999-09-22 2001-10-17 Mitsubishi Chemical Corporation Luminous element and luminous element module
EP1355364A1 (en) * 2001-01-05 2003-10-22 Japan Science and Technology Corporation Optical semiconductor element utilizing optical transition between zno heterostructure sub-bands

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"Extremely broadband AlGaAs/GaAs superluminescent diodes", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US LNKD- DOI:10.1063/1.119844, vol. 71, no. 12, 22 September 1997 (1997-09-22), pages 1598, XP012018618, ISSN: 0003-6951 *

Also Published As

Publication number Publication date
WO2010022526A2 (en) 2010-03-04

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