GB201813343D0 - Electrically controlled active wave guides - Google Patents

Electrically controlled active wave guides

Info

Publication number
GB201813343D0
GB201813343D0 GBGB1813343.9A GB201813343A GB201813343D0 GB 201813343 D0 GB201813343 D0 GB 201813343D0 GB 201813343 A GB201813343 A GB 201813343A GB 201813343 D0 GB201813343 D0 GB 201813343D0
Authority
GB
United Kingdom
Prior art keywords
electrically controlled
wave guides
controlled active
active wave
guides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB1813343.9A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Manchester
Original Assignee
University of Manchester
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Manchester filed Critical University of Manchester
Priority to GBGB1813343.9A priority Critical patent/GB201813343D0/en
Publication of GB201813343D0 publication Critical patent/GB201813343D0/en
Priority to PCT/GB2019/052301 priority patent/WO2020035695A1/en
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004Combinations of two or more optical elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0232Optical elements or arrangements associated with the device
    • H01L31/02327Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09Devices sensitive to infrared, visible or ultraviolet radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/125Composite devices with photosensitive elements and electroluminescent elements within one single body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40Materials therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Light Receiving Elements (AREA)
GBGB1813343.9A 2018-08-15 2018-08-15 Electrically controlled active wave guides Ceased GB201813343D0 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GBGB1813343.9A GB201813343D0 (en) 2018-08-15 2018-08-15 Electrically controlled active wave guides
PCT/GB2019/052301 WO2020035695A1 (en) 2018-08-15 2019-08-15 Electrically controlled active waveguides

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB1813343.9A GB201813343D0 (en) 2018-08-15 2018-08-15 Electrically controlled active wave guides

Publications (1)

Publication Number Publication Date
GB201813343D0 true GB201813343D0 (en) 2018-09-26

Family

ID=63667146

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB1813343.9A Ceased GB201813343D0 (en) 2018-08-15 2018-08-15 Electrically controlled active wave guides

Country Status (2)

Country Link
GB (1) GB201813343D0 (en)
WO (1) WO2020035695A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113865702B (en) * 2021-09-02 2024-04-30 暨南大学 Optical fiber integrated photoelectric detector with polarization function
WO2023239543A2 (en) * 2022-05-19 2023-12-14 The Administrators Of The Tulane Educational Fund Large-area schottky-junction photovoltaics using transition-metal dichalcogenides

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6289914A (en) 1985-05-31 1987-04-24 Sumitomo Electric Ind Ltd Optical waveguide integrated with optical element and its production
US4946242A (en) 1987-08-28 1990-08-07 Hitachi, Ltd. Optical part including integral combination of optical fiber and light emitting or receiving element and method of manufacturing the same
JPH11298014A (en) 1998-04-15 1999-10-29 Sony Corp Optical fiber device, and communicating equipment, illuminator, and measuring instrument using the same, and manufacture thereof
WO2010022526A2 (en) * 2008-08-26 2010-03-04 Exalos Ag Superluminescent diode, or amplifier chip
CN102349014B (en) 2009-03-12 2014-08-20 通用电气医疗集团生物科学公司 Optical-fiber-based light source
KR101871295B1 (en) * 2011-10-19 2018-08-03 삼성전자 주식회사 Optical modulator using graphene
EP2828894A1 (en) 2012-03-22 2015-01-28 The University Of Manchester Photovoltaic cells
JP6133028B2 (en) 2012-09-07 2017-05-24 古河電気工業株式会社 Optical fiber, optical module, and optical module manufacturing method
WO2015081538A1 (en) * 2013-12-05 2015-06-11 华为技术有限公司 Optical modulator and planar photonic device module
KR101531150B1 (en) 2014-07-04 2015-06-23 (주)성진테크 Led probe kit assembly
DE102016223455A1 (en) * 2016-11-25 2018-05-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Optoelectronic components and method for producing an optoelectronic component

Also Published As

Publication number Publication date
WO2020035695A1 (en) 2020-02-20

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)