GB201813343D0 - Electrically controlled active wave guides - Google Patents
Electrically controlled active wave guidesInfo
- Publication number
- GB201813343D0 GB201813343D0 GBGB1813343.9A GB201813343A GB201813343D0 GB 201813343 D0 GB201813343 D0 GB 201813343D0 GB 201813343 A GB201813343 A GB 201813343A GB 201813343 D0 GB201813343 D0 GB 201813343D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrically controlled
- wave guides
- controlled active
- active wave
- guides
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Light Receiving Elements (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB1813343.9A GB201813343D0 (en) | 2018-08-15 | 2018-08-15 | Electrically controlled active wave guides |
PCT/GB2019/052301 WO2020035695A1 (en) | 2018-08-15 | 2019-08-15 | Electrically controlled active waveguides |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB1813343.9A GB201813343D0 (en) | 2018-08-15 | 2018-08-15 | Electrically controlled active wave guides |
Publications (1)
Publication Number | Publication Date |
---|---|
GB201813343D0 true GB201813343D0 (en) | 2018-09-26 |
Family
ID=63667146
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GBGB1813343.9A Ceased GB201813343D0 (en) | 2018-08-15 | 2018-08-15 | Electrically controlled active wave guides |
Country Status (2)
Country | Link |
---|---|
GB (1) | GB201813343D0 (en) |
WO (1) | WO2020035695A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113865702B (en) * | 2021-09-02 | 2024-04-30 | 暨南大学 | Optical fiber integrated photoelectric detector with polarization function |
WO2023239543A2 (en) * | 2022-05-19 | 2023-12-14 | The Administrators Of The Tulane Educational Fund | Large-area schottky-junction photovoltaics using transition-metal dichalcogenides |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6289914A (en) | 1985-05-31 | 1987-04-24 | Sumitomo Electric Ind Ltd | Optical waveguide integrated with optical element and its production |
US4946242A (en) | 1987-08-28 | 1990-08-07 | Hitachi, Ltd. | Optical part including integral combination of optical fiber and light emitting or receiving element and method of manufacturing the same |
JPH11298014A (en) | 1998-04-15 | 1999-10-29 | Sony Corp | Optical fiber device, and communicating equipment, illuminator, and measuring instrument using the same, and manufacture thereof |
WO2010022526A2 (en) * | 2008-08-26 | 2010-03-04 | Exalos Ag | Superluminescent diode, or amplifier chip |
CN102349014B (en) | 2009-03-12 | 2014-08-20 | 通用电气医疗集团生物科学公司 | Optical-fiber-based light source |
KR101871295B1 (en) * | 2011-10-19 | 2018-08-03 | 삼성전자 주식회사 | Optical modulator using graphene |
EP2828894A1 (en) | 2012-03-22 | 2015-01-28 | The University Of Manchester | Photovoltaic cells |
JP6133028B2 (en) | 2012-09-07 | 2017-05-24 | 古河電気工業株式会社 | Optical fiber, optical module, and optical module manufacturing method |
WO2015081538A1 (en) * | 2013-12-05 | 2015-06-11 | 华为技术有限公司 | Optical modulator and planar photonic device module |
KR101531150B1 (en) | 2014-07-04 | 2015-06-23 | (주)성진테크 | Led probe kit assembly |
DE102016223455A1 (en) * | 2016-11-25 | 2018-05-30 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Optoelectronic components and method for producing an optoelectronic component |
-
2018
- 2018-08-15 GB GBGB1813343.9A patent/GB201813343D0/en not_active Ceased
-
2019
- 2019-08-15 WO PCT/GB2019/052301 patent/WO2020035695A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2020035695A1 (en) | 2020-02-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AT | Applications terminated before publication under section 16(1) |