WO2010006864A1 - Elektronische baueinheit und verfahren zu deren herstellung - Google Patents
Elektronische baueinheit und verfahren zu deren herstellung Download PDFInfo
- Publication number
- WO2010006864A1 WO2010006864A1 PCT/EP2009/057409 EP2009057409W WO2010006864A1 WO 2010006864 A1 WO2010006864 A1 WO 2010006864A1 EP 2009057409 W EP2009057409 W EP 2009057409W WO 2010006864 A1 WO2010006864 A1 WO 2010006864A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- conductor
- substrate
- conductor substrate
- molding compound
- substrates
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000004020 conductor Substances 0.000 claims abstract description 135
- 239000000758 substrate Substances 0.000 claims abstract description 87
- 238000000465 moulding Methods 0.000 claims abstract description 33
- 150000001875 compounds Chemical class 0.000 claims abstract description 31
- 230000017525 heat dissipation Effects 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 238000005245 sintering Methods 0.000 claims description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 239000012778 molding material Substances 0.000 claims description 2
- GHYOCDFICYLMRF-UTIIJYGPSA-N (2S,3R)-N-[(2S)-3-(cyclopenten-1-yl)-1-[(2R)-2-methyloxiran-2-yl]-1-oxopropan-2-yl]-3-hydroxy-3-(4-methoxyphenyl)-2-[[(2S)-2-[(2-morpholin-4-ylacetyl)amino]propanoyl]amino]propanamide Chemical compound C1(=CCCC1)C[C@@H](C(=O)[C@@]1(OC1)C)NC([C@H]([C@@H](C1=CC=C(C=C1)OC)O)NC([C@H](C)NC(CN1CCOCC1)=O)=O)=O GHYOCDFICYLMRF-UTIIJYGPSA-N 0.000 description 4
- 229940125797 compound 12 Drugs 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000004873 anchoring Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009766 low-temperature sintering Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000011858 nanopowder Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 230000036316 preload Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000007765 extrusion coating Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/14—Structural association of two or more printed circuits
- H05K1/144—Stacked arrangements of planar printed circuit boards
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
- H01L23/49551—Cross section geometry characterised by bent parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10227—Other objects, e.g. metallic pieces
- H05K2201/1034—Edge terminals, i.e. separate pieces of metal attached to the edge of the PCB
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10628—Leaded surface mounted device
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10742—Details of leads
- H05K2201/10886—Other details
- H05K2201/10924—Leads formed from a punched metal foil
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1131—Sintering, i.e. fusing of metal particles to achieve or improve electrical conductivity
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
- H05K2203/1305—Moulding and encapsulation
- H05K2203/1316—Moulded encapsulation of mounted components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/284—Applying non-metallic protective coatings for encapsulating mounted components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/36—Assembling printed circuits with other printed circuits
- H05K3/368—Assembling printed circuits with other printed circuits parallel to each other
Definitions
- the invention relates to an electronic assembly comprising at least one component substrate carrying conductor substrate which is surrounded by a mechanical protection.
- the invention further relates to a manufacturing method directed thereto.
- the object of the invention is to provide an electronic assembly that provides a possible circuit density in a protective housing in a small space, and which is simple and inexpensive to produce. In particular, this should also be a good heat dissipation of the circuit components can be achieved.
- an electronic module with at least one, component-carrying conductor substrate, which is surrounded by a mechanical protection.
- the conductor substrate of a molding compound is surrounded as mechanical protection and is contacted by means of at least one intrinsically stiff, elastic, electrical connection conductor, wherein the connection conductor is at least partially embedded in the molding compound.
- the connecting conductor for example, a stamped grid
- the conductor substrate itself is surrounded by the molding compound as mechanical protection, so that a separate housing, as known from the prior art, completely eliminated.
- an outer side of the conductor substrate protrudes at least partially from the molding compound for heat dissipation.
- an outer side or side of the conductor substrate is arranged on a base body, in particular a base plate, which protrudes at least partially from the molding compound for heat dissipation.
- a base plate or a base body which protrudes at least partially from the molding compound for heat dissipation.
- the arrangement on a base plate or a base body a large heat discharge in / on this body is possible, especially if it consists of very good heat conducting material, such as a metal. If this is arranged outstandingly out of the molding compound, a particularly good heat dissipation of the electronic assembly can be achieved without the need for a special manufacturing effort.
- At least two conductor substrates are arranged at a distance from one another, wherein the connection conductor is arranged between the conductor substrates and is electrically connected to both conductor substrates.
- the connection conductor is arranged between the conductor substrates and is electrically connected to both conductor substrates.
- the two conductor substrates are arranged parallel or approximately parallel to each other, wherein the connecting conductor is arranged approximately centrally spaced between conductor substrates. Nevertheless, a very good heat dissipation is possible by this arrangement.
- At least a portion of the connecting conductor protrudes from the molding compound as an electrical connection.
- the connecting conductor protrudes from the molding compound as an electrical connection.
- the conductor substrate is a printed circuit board.
- Circuit boards are well known in the art. These can be equipped in a particularly simple manner and integrated into the unit.
- connection conductor bears against the conductor substrate with prestress.
- the connection conductor is applied to the conductor substrate for the purpose of contacting with bias, so that a contact can be made via the elastic design of the connection conductor to the conductor substrate.
- the bias results in a very simple manner by the spatial arrangement of the conductor substrate and connecting conductor relative to each other.
- connection conductor is sintered to the conductor substrate via a sintered connection and thus connected electrically and mechanically.
- the sintering compound which comes about an interdiffusion of sintered materials.
- For the mechanical anchoring and electrical contacting of connecting conductor and conductor substrate particularly advantageous. While, in less demanding applications, contacting may be via purely mechanical spring contacting, as described above, for applications with frequently changing temperatures and with a high temperature Temperature bandwidth and, for example, under mechanical stress (shaking or the like) a sintered connection to achieve higher reliability extremely beneficial.
- the sintered compound is a low-temperature sintered compound.
- a low temperature sintered connection here is one which can be effected via a be sintered at low temperature metal, such as silver nano powder, which ensures at temperatures in a range of typically from about 200 0 C for a mechanical connection through interdiffusion between the contact is to be sintered bodies ,
- the contact points may optionally also be coated with nickel and / or palladium and / or gold and / or an alloy of these metals.
- the conductor substrate is a low temperature cofire ceramic (LTCC).
- LTCC low temperature cofire ceramic
- a low-temperature cofire ceramic is one in which the conductor substrate is built up in several layers, which, unlike the so-called thick-film technique, can be produced in a single process (cofire).
- cofire a single process
- the enclosure of such hybrid modules is connected in the prior art with considerable effort and relatively large housing designs, the heat dissipation succeeds only over elaborately constructed housing.
- the conductor substrate is therefore arranged in the mold, in which the Molden later.
- the connection conductor is arranged in opposition to the conductor substrate, the connection conductor coming into contact contact with the conductor substrate, specifically at the locations where the contacting between the connection conductor and the conductor substrate is to take place.
- molding compound is introduced into the molding tool in order to provide mechanical protection by encasing the assembly of conductor substrate and connecting conductor so obtained to form the mechanical protection.
- the mechanical protection in the broadest sense, therefore, a newly created housing arises at the moment of Ummoldens the arrangement described by the molding compound.
- a method is provided in which prior to the above-described sequence of processes on the conductor substrate contact points by means of a low-temperature sintering metal, in particular silver nanopowders and / or nickel and / or palladium and / or gold or a compound of metals for sintering in areas of the Connecting conductors are formed.
- a low-temperature sintering metal in particular silver nanopowders and / or nickel and / or palladium and / or gold or a compound of metals for sintering in areas of the Connecting conductors are formed.
- the sintering of said areas occurs during the extrusion coating with the molding compound and / or during a swelling of the molding compound.
- no separate process step is required, namely, this is a low-temperature sintering, which takes place in a temperature range in which the Ummoldung is made.
- the molding compound for example, has a temperature of about 300 0 C, wherein the sintering begins at temperatures around 200 0 C.
- the conductor substrate is connected to a base body, in particular a thermally conductive base plate, prior to the molding or arranged on and / or at this. As a result, a slight heat dissipation can be achieved.
- two conductor substrates are arranged in each case in opposite directions, wherein between the two conductor substrates of the connecting conductor for at least partially simultaneous contacting of both conductor substrates is arranged.
- the connecting conductor may be at least partially protruding from the molding compound to form a connector.
- the bias of the connection conductor is applied to at least one conductor substrate when the mold is closed. This means that the connection conductor loosely on the at least one conductor substrate or rests, and the bias to secure
- connection conductor which is also designed as a connector.
- the figure shows an electronic assembly 1, with two substantially parallel opposite arranged conductor substrates 2, namely low temperature cofire ceramic (LTCC) 3. On these electronic components 4, for example, semiconductor s are arranged. These are soldered or bonded on the conductor substrate 2, for example via wire bonding 6.
- the conductor substrates 2 are arranged in such a way plane-parallel spaced from each other, that between them a connection conductor 7, which is for example at least partially formed in the form of a punched grid 8 is arranged. This has for contacting the conductor substrates 2 spring-elastic contact springs 9, which are preferably integrally formed to the connecting conductor 7, for example by punching and molding.
- the contact springs 9 are due to the distance between the conductor substrates 2 to each other, with bias at contact points 10 of the respective conductor substrate 2 at.
- a metal sintering at low temperature is applied to the conductor substrates 2, in particular silver nanopowders and / or nickel and / or palladium and / or gold.
- such is also applied to the ends 11 of the contact springs 9, which are in contact with the contact points 10.
- the electronic module 1 is designed so that the above-described arrangement of conductor substrates 2 and connecting conductor 7 is ummoldet with a molding compound 12, wherein a mechanical protection 13 is formed for the conductor substrates 2 and the embedded connection conductor 7 in the manner of a housing 14 formed by Ummolden.
- Ummolden with molding compound 12 is a temperature entry in the region of the contact spring 9 and the contact points 10, so that there forms sintered at low temperature metal sintered connections 15. These are preferably low-temperature sintered connections 16. This not only causes a very good electrical contact between the contact springs 9 and thus with the connecting conductor 7 with the contact points 10, but also a mechanical fixation of the connecting conductor 7, namely via the contact spring 9 with the respective conductor substrates. 2 This design is very reliable, especially under mechanical stress such as shaking.
- the conductor substrates 2 rest with their backs 17 on the base bodies 18, namely the base plate 19 of thermally conductive material 20.
- an electrical connection 22 of the electronic assembly 1 by the connecting conductor 7 namely from the molding compound 12 is arranged at least partially outstanding.
- additional contact means such as male connectors, as they are known from the prior art, save.
- Especially in the field of microhybrid Circuit technology can be produced so cost-effective extremely reliable electronic assemblies.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Coupling Device And Connection With Printed Circuit (AREA)
- Fuses (AREA)
- Details Of Resistors (AREA)
- Powder Metallurgy (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Combinations Of Printed Boards (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP09779770A EP2305013B1 (de) | 2008-07-17 | 2009-06-16 | Elektronische baueinheit und verfahren zu deren herstellung |
CN200980127396.3A CN102090156B (zh) | 2008-07-17 | 2009-06-16 | 电子组件以及其制造方法 |
JP2011517834A JP2011528176A (ja) | 2008-07-17 | 2009-06-16 | 電子ユニットとその製造方法 |
AT09779770T ATE546033T1 (de) | 2008-07-17 | 2009-06-16 | Elektronische baueinheit und verfahren zu deren herstellung |
US12/737,445 US20110182048A1 (en) | 2008-07-17 | 2009-06-16 | Electronic assembly and method for its manufacture |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008040488.8 | 2008-07-17 | ||
DE102008040488A DE102008040488A1 (de) | 2008-07-17 | 2008-07-17 | Elektronische Baueinheit und Verfahren zu deren Herstellung |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2010006864A1 true WO2010006864A1 (de) | 2010-01-21 |
Family
ID=41064573
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2009/057409 WO2010006864A1 (de) | 2008-07-17 | 2009-06-16 | Elektronische baueinheit und verfahren zu deren herstellung |
Country Status (7)
Country | Link |
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US (1) | US20110182048A1 (de) |
EP (1) | EP2305013B1 (de) |
JP (1) | JP2011528176A (de) |
CN (1) | CN102090156B (de) |
AT (1) | ATE546033T1 (de) |
DE (1) | DE102008040488A1 (de) |
WO (1) | WO2010006864A1 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
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US8959762B2 (en) | 2005-08-08 | 2015-02-24 | Rf Micro Devices, Inc. | Method of manufacturing an electronic module |
DE102010042168A1 (de) * | 2010-10-07 | 2012-04-12 | Robert Bosch Gmbh | Elektronische Baugruppe sowie Verfahren zu deren Herstellung |
US8835226B2 (en) | 2011-02-25 | 2014-09-16 | Rf Micro Devices, Inc. | Connection using conductive vias |
US9627230B2 (en) | 2011-02-28 | 2017-04-18 | Qorvo Us, Inc. | Methods of forming a microshield on standard QFN package |
JP5780175B2 (ja) * | 2012-02-17 | 2015-09-16 | 株式会社デンソー | モールドパッケージおよびその製造方法 |
WO2013174418A1 (de) * | 2012-05-22 | 2013-11-28 | Würth Elektronik GmbH & Co. KG | Verfahren zum herstellen einer elektronischen baugruppe |
US9807890B2 (en) * | 2013-05-31 | 2017-10-31 | Qorvo Us, Inc. | Electronic modules having grounded electromagnetic shields |
DE102013215246A1 (de) | 2013-08-02 | 2015-02-05 | Robert Bosch Gmbh | Elektronikmodul mit Leiterplatten und anspritzbarem Kunststoff-Dichtring, insbesondere für ein Kfz-Getriebesteuergerät, und Verfahren zum Fertigen desselben |
US11127689B2 (en) | 2018-06-01 | 2021-09-21 | Qorvo Us, Inc. | Segmented shielding using wirebonds |
US11219144B2 (en) | 2018-06-28 | 2022-01-04 | Qorvo Us, Inc. | Electromagnetic shields for sub-modules |
US11114363B2 (en) | 2018-12-20 | 2021-09-07 | Qorvo Us, Inc. | Electronic package arrangements and related methods |
DE102019204871A1 (de) * | 2019-04-05 | 2020-10-08 | Robert Bosch Gmbh | Elektronische Schaltungseinheit |
EP3739624A1 (de) * | 2019-05-13 | 2020-11-18 | Infineon Technologies Austria AG | Halbleiteranordnung mit einem zwischen zwei trägern eingekapselten komprimierbaren kontaktelement und entsprechendes herstellungsverfahren |
US11515282B2 (en) | 2019-05-21 | 2022-11-29 | Qorvo Us, Inc. | Electromagnetic shields with bonding wires for sub-modules |
DE102020203993A1 (de) | 2020-03-27 | 2021-09-30 | Robert Bosch Gesellschaft mit beschränkter Haftung | Kontaktanordnung mit sinterverbundenen Schaltungsträgern |
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DE102007032142A1 (de) * | 2007-06-30 | 2009-01-02 | Robert Bosch Gmbh | Elektronikmodul und Verfahren zur Herstellung eines Elektronikmoduls |
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JPH06132447A (ja) * | 1992-10-20 | 1994-05-13 | Hitachi Ltd | 混成型集積回路装置 |
JPH06151703A (ja) * | 1992-11-05 | 1994-05-31 | Sony Corp | 半導体装置及びその成形方法 |
JP2001077232A (ja) * | 1999-09-06 | 2001-03-23 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
TW550997B (en) * | 2001-10-18 | 2003-09-01 | Matsushita Electric Ind Co Ltd | Module with built-in components and the manufacturing method thereof |
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DE102005047567B3 (de) * | 2005-10-05 | 2007-03-29 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit Isolationszwischenlage und Verfahren zu seiner Herstellung |
KR100656751B1 (ko) * | 2005-12-13 | 2006-12-13 | 삼성전기주식회사 | 전자소자 내장 인쇄회로기판 및 그 제조방법 |
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2008
- 2008-07-17 DE DE102008040488A patent/DE102008040488A1/de not_active Withdrawn
-
2009
- 2009-06-16 JP JP2011517834A patent/JP2011528176A/ja active Pending
- 2009-06-16 AT AT09779770T patent/ATE546033T1/de active
- 2009-06-16 CN CN200980127396.3A patent/CN102090156B/zh not_active Expired - Fee Related
- 2009-06-16 EP EP09779770A patent/EP2305013B1/de not_active Not-in-force
- 2009-06-16 US US12/737,445 patent/US20110182048A1/en not_active Abandoned
- 2009-06-16 WO PCT/EP2009/057409 patent/WO2010006864A1/de active Application Filing
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EP0521335A1 (de) * | 1991-06-17 | 1993-01-07 | Fujitsu Limited | Oberflächenmontierbare Halbleiterpackung mit verbesserter Wärmeabfuhr |
EP0767495A2 (de) * | 1991-06-17 | 1997-04-09 | Fujitsu Limited | Oberflächenmontierbare Halbleiterpackung |
US5877937A (en) * | 1995-12-28 | 1999-03-02 | Rohm Co., Ltd. | Encapsulated semiconductor device and electronic circuit board mounting same |
US20050161251A1 (en) * | 2003-12-24 | 2005-07-28 | Sanyo Electric Co., Ltd. | Hybrid integrated circuit device and method of manufacturing the same |
US20050205970A1 (en) * | 2004-03-17 | 2005-09-22 | Da-Jung Chen | [package with stacked substrates] |
DE102007032142A1 (de) * | 2007-06-30 | 2009-01-02 | Robert Bosch Gmbh | Elektronikmodul und Verfahren zur Herstellung eines Elektronikmoduls |
Also Published As
Publication number | Publication date |
---|---|
CN102090156A (zh) | 2011-06-08 |
EP2305013B1 (de) | 2012-02-15 |
JP2011528176A (ja) | 2011-11-10 |
DE102008040488A1 (de) | 2010-01-21 |
ATE546033T1 (de) | 2012-03-15 |
EP2305013A1 (de) | 2011-04-06 |
US20110182048A1 (en) | 2011-07-28 |
CN102090156B (zh) | 2014-07-16 |
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