WO2010003527A1 - Système d’éclairage pour appareil d’exposition par projection en lithographie à semi-conducteur, et appareil d’exposition par projection - Google Patents

Système d’éclairage pour appareil d’exposition par projection en lithographie à semi-conducteur, et appareil d’exposition par projection Download PDF

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Publication number
WO2010003527A1
WO2010003527A1 PCT/EP2009/004357 EP2009004357W WO2010003527A1 WO 2010003527 A1 WO2010003527 A1 WO 2010003527A1 EP 2009004357 W EP2009004357 W EP 2009004357W WO 2010003527 A1 WO2010003527 A1 WO 2010003527A1
Authority
WO
WIPO (PCT)
Prior art keywords
illumination system
micromirrors
shaping unit
exposure apparatus
beam shaping
Prior art date
Application number
PCT/EP2009/004357
Other languages
English (en)
Inventor
Damian Fiolka
Original Assignee
Carl Zeiss Smt Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss Smt Ag filed Critical Carl Zeiss Smt Ag
Publication of WO2010003527A1 publication Critical patent/WO2010003527A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets

Definitions

  • Illumination system for a projection exposure apparatus in semiconductor lithography and projection exposure apparatus Illumination system for a projection exposure apparatus in semiconductor lithography and projection exposure apparatus
  • the invention relates to an illumination system for a projection exposure apparatus in semiconductor lithography and to a projection exposure apparatus in which the illumination system according to the invention is employed.
  • Projection exposure apparatuses in semiconductor lithography are based on the principle that a structure on a mask, a so-called reticle, which structure is to be imaged onto a semiconductor wafer by means of a photolithographic method, is illuminated and subsequently imaged on the semiconductor wafer generally in demagnified fashion by means of a projection optical unit.
  • the intensity distribution by means of which * the reticle is illuminated can depend on the structure to be imaged and change from reticle to reticle.
  • An alternative to this procedure consists in using, instead of diaphragms, areal active optical elements by means of which the desired distribution of the illumination light can be set dynamically.
  • a micromirror array having hundreds of individually drivable micromirrors arranged in rows and columns, it is possible to set practically any desired distribution of the intensity of the illumination light in a reticle or pupil plane of the projection exposure apparatus.
  • a micromirror array should be understood to mean a group of micromirrors, wherein this group can also be arranged one-dimensionally, that is to say linearly, or else three-dimensionally, that is to say spatially.
  • FIG 2 schematically illustrates an illumination system according to the prior art in which this technology is employed.
  • this technology in this case it is often necessary to set extreme tilting angles of the individual micromirrors.
  • the illumination system according to the invention for a projection exposure apparatus for semiconductor lithography exhibits a light source for generating a beam bundle.
  • the illumination system contains optical elements, in particular a beam shaping unit for setting different angular orientations of different partial beams of the beam bundle.
  • the beam shaping unit has a micromirror array having a plurality of micromirrors that are arranged on a carrier element and can be tilted about a zero position, which beam shaping unit is embodied in such a way that given a zero position of all the micromirrors at least two micromirrors are present for which partial beams that are reflected at the same angle relative to the surface of the two micromirrors leave the beam shaping unit (2) in different directions.
  • the carrier element is embodied in such a way that the reflective surfaces of the micromirrors do not lie in the same plane in a zero position of the micromirrors.
  • the carrier element has at least two, in particular four, planar regions on which the micromirrors are arranged, wherein the planar regions are tilted with respect to one another by an angle that is different from zero.
  • the angle by which the abovementioned regions are tilted with respect to one another can be e.g. 8° -12° and dynamically adjustable by means of a suitable actuator system.
  • the beam shaping unit (2) can have an additional optical element suitable for deflecting a portion of the partial beams of the beam bundle further in addition to the deflection already effected on account of the micromirror array.
  • the additional optical element can be a wedge plate, for example.
  • wedge plate is understood to mean an optical element composed of a material that is transmissive to the useful radiation, wherein the interfaces which the useful radiation passes through upon passing through the optical element do not run parallel to one another.
  • Other optical elements such as e.g. lenses or diffractive optical elements, can also be employed for the purpose mentioned.
  • the additional optical element can be embodied in such a way that it can be introduced into and moved out of the beam path e.g. by means of a suitable actuator system.
  • At least two light sources are present.
  • the illumination system is designed in such a way that the beam bundles that emerge from the at least two light sources reach different regions of the micromirror array. These can be the already discussed planar partial regions that are tilted with respect to one another. This embodiment of the invention makes it possible to provide an overall higher optical power for the exposure process.
  • a further variant of the invention consists in the fact that in a zero position of the micromirrors, partial beams leave the beam shaping unit (2) in two different directions, wherein the partial beams in the first direction originate from a first group of the micromirrors and the partial beams in the second direction originate from a second group of the micromirrors, and wherein the number of the micromirrors in both groups is approximately identical in magnitude.
  • the reflective elements can be mirror facets of a facet mirror, in particular for EUV lithography.
  • the carrier element can be embodied as part of a curved shell or be composed of planar segments which form at least one part of a curved shell.
  • the radius of the shell can in this case be 500 - 1800mm, preferably 900 - 1100 mm, in particular 1000 mm.
  • the facet mirror can be a field facet mirror or a pupil facet mirror.
  • Figure 1 shows a projection exposure apparatus according to the prior art
  • FIG. 2 shows a detail illustration of an illumination system according to the prior art
  • Figure 3 shows a micromirror array according to the prior art in an enlarged illustration
  • Figure 4 shows a micromirror array according to the invention in an enlarged illustration
  • FIG. 5 shows an alternative embodiment of the invention.
  • Figure 6 shows an application of the invention in an illumination system for semiconductor lithography.
  • Figure 1 illustrates a projection exposure apparatus 31 for semiconductor lithography according to the prior art.
  • the apparatus serves for the exposure of structures onto a substrate coated with photosensitive materials, which substrate in general is composed predominantly of silicon and is referred to as a wafer 32, for the production of semiconductor components, such as e.g. computer chips.
  • the projection exposure apparatus 31 essentially comprises an illumination system 33, a device 34 for receiving and exactly positioning a mask provided with a structure, a so- called reticle 35, which is used to determine the later structures on the wafer 32, a device 36 for retaining, moving and exactly positioning precisely said wafer 32, and an imaging device, namely a projection objective 37, comprising a plurality of optical elements 38, which are borne by means of mounts 39 in an objective housing 40 of the projection objective 37.
  • the basic functional principle provides for the structures introduced into the reticle 35 to be imaged onto the wafer 32; the imaging is generally performed in demagnifying fashion.
  • the wafer 32 is moved further in the arrow direction, such that a multiplicity of individual fields, each with the structure prescribed by the reticle 35, are exposed on the same wafer 32.
  • the step-by-step advancing movement of the wafer 32 in the projection exposure apparatus 31 the latter is often also referred to as a stepper.
  • the illumination system 33 provides a projection beam 41, for example light or a similar electromagnetic radiation, required for the imaging of the reticle 35 on the wafer 32.
  • a laser or the like can be used as a source for said radiation.
  • the radiation is shaped in the illumination system 33 by means of optical elements in such a way that the projection beam 41, upon impinging on the reticle 35, has the desired properties with regard to diameter, polarization, shape of the wavefront and the like.
  • the projection objective 37 has a multiplicity of individual refractive, diffractive and/or reflective optical elements 38 such as e.g. lenses, mirrors, prisms, terminating plates and the like.
  • FIG 2 schematically shows a more detailed illustration of the illumination system 33 of the projection exposure apparatus shown in Figure 1.
  • the primary light source 1 used in the illumination system 33 is a laser, which can be embodied for example as an F 2 laser having an operating wavelength of 157 nm, or as an ArF excimer laser having an operating wavelength of 193 nm. Other primary light sources having a longer or shorter operating wavelength can also be employed.
  • the light beam After emerging from the primary light source 1, the light beam enters into a beam expanding optical unit 7, which generates a substantially parallel beam bundle having a larger cross section.
  • the beam expanding optical unit 7 can contain elements that reduce the coherence of the illumination light.
  • the expanded, parallel and homogeneous beam is split into a plurality of parallel partial beams in the further course in the microlens array 3.
  • the partial beams impinge on the micromirrors of the micromirror array 21 in the beam shaping unit 2.
  • a predefined angle distribution of the individual partial beams is set by means of a corresponding angle setting of the individual micromirrors, which are not designated more specifically in Figure 2, such that a predefined intensity distribution of the illumination light arises after passing through the diffuser 4 and the lens 5 in the pupil plane 6.
  • micromirrors are typically adjustable in an angular range of -10° to +10°.
  • Figure 3 shows the micromirror array 21 in an enlarged illustration in order to clarify the problem area. It comprises the carrier element 210 and the tiltable micromirrors 211, 212, 213, 214 arranged on the carrier element 210.
  • the partial beams 221, 222, 223 and 224 that are reflected as partial beams 221', 222', 223' and 224' at the micromirrors 211, 212, 213, 214 will be considered by way of example in Figure 2.
  • the light spots generated thereby in the downstream pupil plane are illustrated in the upper part of Figure 2 by the corresponding assignments to the partial beams 221', 222', 223', 224'.
  • the two micromirrors 211 and 214 have to be tilted by a comparatively large angle relative to their zero position (the latter is essentially parallel to the surface of the carrier element 210) .
  • controlling or complying with predefined angle positions becomes difficult.
  • a first variant according to the invention for solving the problem area outlined with reference to Figure 3 consists in using an arrangement such as is illustrated in Figure 4.
  • Figure 4 shows a micromirror array 21, the carrier element 210' of which is divided into two regions that are tilted relative to one another. What is achieved by this tilting is that the micromirrors 211, 212, 213, 214 arranged on the carrier element 210' already have a certain angle offset, such that extreme angle positions of the micromirrors do not have to be set. It becomes clear from Figure 4 that, according to the invention, the intensity distribution - identical to the illustration in Figure 3 - of the illumination light in the pupil plane can be achieved with a significantly smaller tilting angle of the micromirrors 211, 212, 213 and 214.
  • a variable setting of the tilting of the two partial regions of the carrier element 210 relative to one another can be achieved by means of the actuator unit 230, which can be realized for example as a linear motor, adjusting screw or alternatively piezo-drive.
  • the actuator arrangement 230 engages via suitable lever elements 235 on the partial regions of the carrier element 210', which can be connected to one another for example by means of a hinge (not illustrated) .
  • the tilting angle of the two partial regions relative to one another can be set in particular in a range of 8° to 12°; settings outside this range are also conceivable.
  • each partial region is assigned a pupil partial region.
  • beams from a specific partial region of the micromirror array 21 also in each case reach only the correspondingly assigned pupil region.
  • the required angle adjustment range of the individual micromirrors 211, 212, 213, 214 can thereby be approximately halved.
  • the offset angle per segment is set in such a way that in the zero position of the micromirrors 211, 212, 213, 214, the partial beams obtain an angle of NA(MAX) /2 with respect to the pupil coordinate system (beams parallel to the optical axis and upstream of the pupil lens lie in the center of the pupil) .
  • NA(MAX) /2 corresponds to the maximum radius of the pupil plane. If the offset position is set to NA(MAX) /2, that is to say ⁇ R/2 ⁇ , then the angle range of approximately 2*R/2, that is to say R, proceeding from the zero position, can be achieved from it in all directions. An optimum utilization of the adjustment range thus results.
  • Figure 5 shows an alternative configuration of the beam shaping unit 2, in which a tilted arrangement of individual regions of the carrier element 210 relative to one another can be dispensed with.
  • the desired necessary angle setting of the individual partial beams is achieved by virtue of the fact that an additional optical element 200 is present, which performs the required deflection of the corresponding partial beams.
  • the additional optical element 200 is a wedge plate in which the desired effect is achieved refractively .
  • the refractive effect of the wedge plate 200 results in the beam profiles that are depicted in dashed fashion and are designated by the reference symbols 223' ' and 224 ' '.
  • the beam profiles 223' and 224' correspond to the profiles that would arise without the use of a wedge plate.
  • wedge plate 200 with a suitable mechanism by means of which said wedge plate can for example be brought into the beam path or removed from the latter or else be tilted in the beam path itself.
  • suitable mechanism by means of which said wedge plate can for example be brought into the beam path or removed from the latter or else be tilted in the beam path itself.
  • the use of a plurality of wedge plates or optical elements 200 which are assigned to different regions of the micromirror array 21 can also be advantageous for specific applications.
  • the two concepts outlined with reference to Figures 4 and 5 need not necessarily be used alternatively, but rather can, of course, also be combined.
  • Figure 6 shows, in a roughly schematic partial illustration, a variant of the invention in which the latter is applied in an illumination system of a projection exposure apparatus for EUV lithography.
  • the short-wave optical radiation required for the exposure of the wafer (not illustrated) is generated by the plasma source 600 and pre-shaped or concentrated by the collector mirror 601.
  • the optical radiation After passing through a diaphragm 602, the optical radiation firstly reaches the field facet mirror 603, which has a multiplicity of mirror facets 610 mounted in movable fashion.
  • the mirror facets 610 are formed as substantially rectangular bodies whose side on which light impinges is generally embodied in spherical fashion.
  • the mirror facets 610 can be composed, in particular, of silicon or else some other material; the reflective side on which light impinges can also be embodied as a multilayer layer.
  • the mobility of the mirror facets 610 is ensured by virtue of the fact that they are mounted in a carrier element 612 in movable fashion in each case by means of a holding element 611. In this case, the actuation of the movable mirror facets 610 can be effected from that side of the carrier element 612 which is remote from the mirror facets 610.
  • the holding elements 611 should be configured as far as possible such that the distance between the pivot, that is to say essentially the mounting in the carrier element 612, and the mirror facet 610 itself is kept small in order to ensure a tilting of the mirror facets 610 in such a way that the tilting is associated only with a small lateral offset of the mirror facet 610.
  • the geometrical configuration of the holding element 611 is that large tilting angles of the mirror facets 610 can be achieved in conjunction with small deflections of the entire mirror facet 610 on a trajectory curve.
  • the carrier element 612 of the field facet mirror 603 is embodied in such a way that a certain angular offset of the individual mirror facets 610 with respect to one another is already achieved by virtue of the geometrical shape of said carrier element. This reduces the tilting angles of the mirror facets 610 that are additionally required for setting a desired illumination setting, for example, upon the actuation of the individual mirror facets 610.
  • the carrier element 612 can in this case be composed in segments from substantially planar segments which are arranged at an angle different than zero degrees with respect to one another, and in particular form a half shell by virtue of their arrangement with respect to one another.
  • the carrier element 612 overall not from individual segments but rather as a half shell embodied more or less spherically.
  • the pupil mirror 604 arranged downstream in the light path said pupil mirror usually being equipped with mirror facets 620 embodied rather in round fashion, can also be embodied in a manner analogous to the field facet mirror 603.
  • the optical radiation After passing through the pupil mirror 604, the optical radiation reaches the reticle 650, which is imaged onto a wafer in the downstream projection optical unit (not illustrated) .
  • the carrier element 613 of the pupil mirror 604 is constructed spherically or in free form fashion; other combinations of the basic forms of the carrier elements 612 and 613 are also conceivable.
  • the actuability of the mirror facets 610 and 620, respectively, has the advantage in both cases that, in contrast to the systems realized protypically hitherto, desired illumination settings are no longer achieved by using diaphragms but rather by means of a corresponding deflection of the light.
  • the loss of intensity of the radiation used for the exposure of the wafers said loss being inevitably associated with the use of diaphragms, is thereby avoided, which constitutes a considerable advantage particularly in EUV lithography.
  • the radius of the spheres in which the individual segments approximately run or on which the mirror facets 610 or 620 are directly arranged with their holding elements 611 or 615 can in this case lie in a range of approximately 500-1800mm, preferably in a range of 900-llOOmm, in particular at about 1000 mm.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

L’invention concerne un système d’éclairage pour un appareil d’exposition par projection en lithographie à semi-conducteur, lequel système comprend une source lumineuse générant un groupe de faisceaux et des éléments optiques pour conditionner le groupe de faisceaux, et comprend également une unité de mise en forme de faisceau permettant de régler différentes orientations angulaires de différents faisceaux partiels du groupe de faisceaux. Dans le cas présent, l’unité de mise en forme de faisceau comprend un réseau de micromiroirs comportant une pluralité de micromiroirs qui sont disposés sur un élément de support et peuvent être basculés autour d’une position zéro, l’unité de mise en forme de faisceau étant réalisée de sorte que, dans le cas où tous les micromiroirs sont à une position zéro, il existe au moins deux micromiroirs pour lesquels des faisceaux partiels réfléchis à un même angle par rapport à la surface des deux micromiroirs quittent l’unité de mise en forme de faisceau dans des directions différentes. L’invention concerne en outre un appareil d’exposition par projection, équipé du système d’éclairage correspondant.
PCT/EP2009/004357 2008-06-17 2009-06-16 Système d’éclairage pour appareil d’exposition par projection en lithographie à semi-conducteur, et appareil d’exposition par projection WO2010003527A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US7307308P 2008-06-17 2008-06-17
DE200810028416 DE102008028416A1 (de) 2008-06-17 2008-06-17 Beleuchtungssystem für eine Projektionsbelichtungsanlage in der Halbleiterlitographie und Projektionsbelichtungsanlage
US61/073,073 2008-06-17
DE102008028416.5 2008-06-17

Publications (1)

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WO2010003527A1 true WO2010003527A1 (fr) 2010-01-14

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011005840A1 (de) 2011-03-21 2012-09-27 Carl Zeiss Smt Gmbh Steuerbare Mehrfachspiegelanordnung, optisches System mit einer steuerbaren Mehrfachspiegelanordnung sowie Verfahren zum Betreiben einer steuerbaren Mehrfachspiegelanordnung
WO2014075902A1 (fr) * 2012-11-13 2014-05-22 Carl Zeiss Smt Gmbh Unité optique d'éclairage pour une lithographie par projection dans l'ultraviolet extrême

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US6249382B1 (en) * 1998-07-03 2001-06-19 Nikon Corporation Illumination optical system and projection exposure apparatus using same
WO2005026843A2 (fr) * 2003-09-12 2005-03-24 Carl Zeiss Smt Ag Systeme d'eclairage pour une installation d'exposition de projection de microlithographie
US6977718B1 (en) * 2004-03-02 2005-12-20 Advanced Micro Devices, Inc. Lithography method and system with adjustable reflector
US20080100816A1 (en) * 2006-10-31 2008-05-01 Asml Netherlands B.V. Lithographic apparatus and method

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KR100480620B1 (ko) * 2002-09-19 2005-03-31 삼성전자주식회사 마이크로 미러 어레이를 구비한 노광 장치 및 이를 이용한노광 방법
DE10343333A1 (de) * 2003-09-12 2005-04-14 Carl Zeiss Smt Ag Beleuchtungssystem für eine Mikrolithographie-Projektionsbelichtungsanlage
DE102004063848A1 (de) * 2004-02-26 2005-09-15 Carl Zeiss Smt Ag Beleuchtungssystem für eine Mikrolithographie-Projektionsbelichtungsanlage
DE102007055408A1 (de) * 2006-11-21 2008-05-29 Carl Zeiss Smt Ag Beleuchtungsoptik für die Projektions-Mikrolithografie sowie Mess- und Überwachungsverfahren für eine derartige Beleuchtungsoptik

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6249382B1 (en) * 1998-07-03 2001-06-19 Nikon Corporation Illumination optical system and projection exposure apparatus using same
WO2005026843A2 (fr) * 2003-09-12 2005-03-24 Carl Zeiss Smt Ag Systeme d'eclairage pour une installation d'exposition de projection de microlithographie
US6977718B1 (en) * 2004-03-02 2005-12-20 Advanced Micro Devices, Inc. Lithography method and system with adjustable reflector
US20080100816A1 (en) * 2006-10-31 2008-05-01 Asml Netherlands B.V. Lithographic apparatus and method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011005840A1 (de) 2011-03-21 2012-09-27 Carl Zeiss Smt Gmbh Steuerbare Mehrfachspiegelanordnung, optisches System mit einer steuerbaren Mehrfachspiegelanordnung sowie Verfahren zum Betreiben einer steuerbaren Mehrfachspiegelanordnung
WO2012126803A1 (fr) 2011-03-21 2012-09-27 Carl Zeiss Smt Gmbh Groupement de miroirs pouvant être commandés
WO2014075902A1 (fr) * 2012-11-13 2014-05-22 Carl Zeiss Smt Gmbh Unité optique d'éclairage pour une lithographie par projection dans l'ultraviolet extrême
KR20150082280A (ko) * 2012-11-13 2015-07-15 칼 짜이스 에스엠티 게엠베하 Euv 투영 리소그래피용 조명 광학 유닛
JP2016502684A (ja) * 2012-11-13 2016-01-28 カール・ツァイス・エスエムティー・ゲーエムベーハー Ｅｕｖ投影リソグラフィのための照明光学ユニット
US9411239B2 (en) 2012-11-13 2016-08-09 Carl Zeiss Smt Gmbh Illumination optical unit for EUV projection lithography
KR102226734B1 (ko) 2012-11-13 2021-03-12 칼 짜이스 에스엠티 게엠베하 Euv 투영 리소그래피용 조명 광학 유닛

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