WO2009151303A3 - 세정 장치 - Google Patents

세정 장치 Download PDF

Info

Publication number
WO2009151303A3
WO2009151303A3 PCT/KR2009/003177 KR2009003177W WO2009151303A3 WO 2009151303 A3 WO2009151303 A3 WO 2009151303A3 KR 2009003177 W KR2009003177 W KR 2009003177W WO 2009151303 A3 WO2009151303 A3 WO 2009151303A3
Authority
WO
WIPO (PCT)
Prior art keywords
carrier gas
cleaning device
aperture
supply
mixed
Prior art date
Application number
PCT/KR2009/003177
Other languages
English (en)
French (fr)
Other versions
WO2009151303A2 (ko
Inventor
유동영
Original Assignee
주식회사 에스티에스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 에스티에스 filed Critical 주식회사 에스티에스
Priority to US12/997,530 priority Critical patent/US8769749B2/en
Priority to CN200980121881XA priority patent/CN102057469B/zh
Publication of WO2009151303A2 publication Critical patent/WO2009151303A2/ko
Publication of WO2009151303A3 publication Critical patent/WO2009151303A3/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
  • Detergent Compositions (AREA)

Abstract

원료액이 유입되는 제1구멍과, 캐리어 가스가 유입되는 제2구멍과, 상기 원료액과 상기 캐리어 가스를 혼합하여 혼합 가스를 생성하는 혼합 공간과, 상기 제2구멍과 연결되어 상기 혼합 공간에 상기 캐리어 가스를 공급하는 캐리어 가스 노즐과, 상기 혼합 가스를 배출하는 제3구멍을 구비하는 혼합 기화기에 대하여, 상기 제1구멍, 상기 제2구멍, 상기 제3구멍 중 적어도 하나를 통하여 세정액을 순환시킴으로써 상기 혼합 기화기를 세정하는 세정 장치를 제공한다.
PCT/KR2009/003177 2008-06-12 2009-06-12 세정 장치 WO2009151303A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/997,530 US8769749B2 (en) 2008-06-12 2009-06-12 Cleaning device
CN200980121881XA CN102057469B (zh) 2008-06-12 2009-06-12 清洁装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080055096A KR100888958B1 (ko) 2008-06-12 2008-06-12 세정 장치
KR10-2008-0055096 2008-06-12

Publications (2)

Publication Number Publication Date
WO2009151303A2 WO2009151303A2 (ko) 2009-12-17
WO2009151303A3 true WO2009151303A3 (ko) 2010-03-11

Family

ID=40698314

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/003177 WO2009151303A2 (ko) 2008-06-12 2009-06-12 세정 장치

Country Status (4)

Country Link
US (1) US8769749B2 (ko)
KR (1) KR100888958B1 (ko)
CN (1) CN102057469B (ko)
WO (1) WO2009151303A2 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100976124B1 (ko) 2010-01-05 2010-08-16 테크노세미켐 주식회사 염화티타늄 사용중의 미립자 발생 억제 방법
CN103841871B (zh) 2011-09-02 2017-06-09 创科地板护理技术有限公司 用于抽吸清洁机的供料罐
CN106140753B (zh) * 2015-04-16 2018-05-22 宝山钢铁股份有限公司 用于连退生产线的治理槽体结垢污染的淬水槽清洗工艺

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0161865B1 (ko) * 1995-06-23 1999-02-01 문정환 제트노즐을 이용한 반도체웨이퍼 세정장치
KR100209751B1 (ko) * 1996-04-12 1999-07-15 구본준 반도체 웨이퍼 세정 장치
KR20030056451A (ko) * 2001-12-28 2003-07-04 주식회사 하이닉스반도체 화학기계적 연마용 슬러리 필터의 재활용장치
KR20080013352A (ko) * 2006-08-08 2008-02-13 류동영 혼합기화기를 세정하기 위한 세정장치

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003041881A1 (en) * 2001-11-15 2003-05-22 L'air Liquide, Societe Anonyme A Directoire Et Conseil De Surveillance Pour L'etude Et L'exploitation Des Procedes Georges Claude Source liquid supply apparatus having a cleaning function

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0161865B1 (ko) * 1995-06-23 1999-02-01 문정환 제트노즐을 이용한 반도체웨이퍼 세정장치
KR100209751B1 (ko) * 1996-04-12 1999-07-15 구본준 반도체 웨이퍼 세정 장치
KR20030056451A (ko) * 2001-12-28 2003-07-04 주식회사 하이닉스반도체 화학기계적 연마용 슬러리 필터의 재활용장치
KR20080013352A (ko) * 2006-08-08 2008-02-13 류동영 혼합기화기를 세정하기 위한 세정장치

Also Published As

Publication number Publication date
CN102057469B (zh) 2013-03-27
CN102057469A (zh) 2011-05-11
US20110094547A1 (en) 2011-04-28
WO2009151303A2 (ko) 2009-12-17
US8769749B2 (en) 2014-07-08
KR100888958B1 (ko) 2009-03-17

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