WO2009146592A1

WO2009146592A1 - A solar cell photovoltaic panel and a light gathering power device having the solar cell phtovoltaic panel

Info

Publication number: WO2009146592A1
Application number: PCT/CN2008/071436
Authority: WO
Inventors: 古捷玉
Original assignee: Gu Jieyu
Priority date: 2008-06-05
Filing date: 2008-06-26
Publication date: 2009-12-10
Also published as: CN100578819C; CN101286532A

Abstract

The present invention discloses a solar cell photovoltaic panel and a light gathering power device having the solar cell photovoltaic panel. The technical problem to be resolved is to improve the efficiency of the solar cell. The photovoltaic panel, two surfaces of the silicon chip are manufactured by semiconductor technology separately, and the two surfaces of the silicon chip form two PN junctions with photoelectric effect, there are electrode wirings set on the surfaces of two junctions. A light gathering power device having photovoltaic panel, there is a reflector sheet below the surface of the silicon sheet, the reflector sheet is set on the reflector control device. Compared with the existing technology, the two surfaces of the silicon chip of the invention are manufactured by semiconductor technology separately, and the two surfaces of the silicon chip form two PN junctions with photoelectric effect. The invention forms two solar cells on the positive and negative surfaces respectively, and the photovoltaic current is the sum of positive and negative surfaces. This can take full advantage of sunlight, make photovoltaic current increase significantly and improve the efficiency of the photoelectric.

Description

Description Photovoltaic panel of solar cell and concentrating power generation device with the same, photovoltaic panel of solar cell and concentrating power generation device with the same

[1] Technical field

[2] The present invention relates to a solar cell, and more particularly to a photovoltaic panel structure of a solar cell and a solar photovoltaic power generation device with the same.

[3] Background Art

[4] Solar cells are a device for converting solar energy into electrical energy. The photovoltaic panels of the prior art solar cells are arranged on one side with PN junction photovoltaic panels. The disadvantage is that solar energy cannot be fully utilized, and solar energy is converted into electrical energy. It is inefficient and requires a large amount of silicon material. For example, a solar cell per square meter of single-sided photovoltaic panel can obtain 150 watts of electricity, and its efficiency is only 15%. If more power is needed, more solar photovoltaic panels need to be installed, which consumes a large amount of silicon crystal materials and increases the cost of solar power generation, so that people cannot fully utilize solar energy.

[5] Summary of the invention

[6] An object of the present invention is to provide a photovoltaic panel for a solar cell and a solar collector device with the photovoltaic panel, and the technical problem to be solved is to improve the efficiency of the solar cell.

[7] The present invention adopts the following technical solutions: A photovoltaic panel of a solar cell, comprising a silicon wafer, two surfaces of the silicon wafer are respectively formed by a semiconductor manufacturing process to form a PN junction having a photoelectric effect, and in the silicon wafer On both surface PN junctions, electrode leads are respectively provided.

[8] The PN junction pattern formed on both surfaces of the photovoltaic panel of the solar cell of the present invention is a full-surface diffusion pattern, a mesh diffusion pattern, a comb-like diffusion pattern or a comb-comb diffusion pattern.

[9] The silicon wafer of the photovoltaic panel of the solar cell of the present invention is an N-type silicon wafer, and the two surfaces of the N-type silicon wafer are respectively formed into a P-type layer and an N+-type layer by a semiconductor manufacturing process, and the P-type layer Electrode leads are provided on the N+ type layer, respectively.

[10] The N+ type layer of the photovoltaic panel of the solar cell of the present invention is respectively provided with a negative electrode lead having a width of 0.1 mm at a distance of 2-4 mm, and the P type layer is respectively provided with a width at a distance of 2-4 mm. It is a 0.1 mm positive electrode lead. [11] The silicon wafer of the photovoltaic panel of the solar cell of the present invention is a P or N type silicon wafer, and the two surfaces of the P or N type silicon wafer are respectively formed into an N+ or P+ type layer by a semiconductor manufacturing process.

Electrode leads are respectively disposed on the P or N type layer and the N+ or P+ type layer.

[12] The N+ or P+ type layer of the photovoltaic panel of the solar cell of the present invention is respectively provided with a negative or positive electrode lead I line having a width of 0.1 mm at a distance of 2-4 mm, and the P or N type layer is separated by 2-4 mm. The spacing of the positive or negative electrode is provided on the spacing of 0.1 mm.

[13] A photovoltaic power generation device with a solar cell photovoltaic panel, comprising a photovoltaic panel of a solar cell, wherein two surfaces of the silicon wafer of the photovoltaic panel are respectively formed by a semiconductor manufacturing process to form a P having a photoelectric effect

N junction, and on the two surface PN junctions of the silicon wafer, electrode leads are respectively disposed, and a reflector is disposed under the surface of the silicon wafer, and the reflector is disposed on the reflector control mechanism.

[14] The silicon wafer of the photovoltaic generator with solar cell photovoltaic panel is an N-type silicon wafer, and the two surfaces of the N-type silicon wafer are respectively formed by a semiconductor manufacturing process, and a P-type layer and an N+-type layer are sequentially formed. The P-type layer and the N+-type layer are respectively provided with electrode leads.

[15] The silicon wafer of the photovoltaic generator with solar cell photovoltaic panel is a P-type or N-type silicon wafer, and the two surfaces of the P-type or N-type silicon wafer are respectively formed into a N+ type or a P+ type by a semiconductor manufacturing process. The layer, the P-type or N-type layer and the N+ type or P+ type layer are respectively provided with electrode leads.

[16] The reflector control mechanism of the concentrating power generation device with a solar cell photovoltaic panel includes a photovoltaic panel mount, a reflector placement frame, a bracket, and a sun adjuster.

[17] Compared with the prior art, the present invention forms a PN junction having a photoelectric effect on the two surfaces of the silicon wafer by a semiconductor manufacturing process, and is respectively provided with electrodes on the PN junctions of the two surfaces of the silicon wafer. The lead wire forms two solar cells of the front and the back, and can be stereoscopically dimmed. The total photocurrent current is the sum of the positive and negative sides, and the reflected light can be easily received. The intensity of the reflected light can exceed the direct light and can be adjusted.

In order to make full use of the sunlight, the photo-generated current is greatly increased, and the photoelectric efficiency is improved.

[18] BRIEF DESCRIPTION OF THE DRAWINGS

1 is a schematic structural view of a solar cell according to an embodiment of the present invention.

2 is a schematic structural view of a prior art solar cell.

Figure 3 is a schematic view showing the structure of Embodiment 1 of the present invention.

4 is a schematic structural view of Embodiment 2 of the present invention. FIG. 5 is a schematic structural view corresponding to FIG. 1 according to an embodiment of the present invention.

6 is a schematic view showing the entire surface diffusion structure of an N+ type layer according to an embodiment of the present invention.

Fig. 7 is a schematic view showing a comb-comb diffusion structure of an N+ type layer according to an embodiment of the present invention.

Fig. 8 is a schematic view showing a comb-like diffusion structure of an N+ type layer according to an embodiment of the present invention.

9 is a schematic diagram of a square mesh diffusion structure of an N+ type layer according to an embodiment of the present invention.

Figure 10 is a schematic view showing a negative electrode of a full-surface diffusion structure of an N+ type layer according to an embodiment of the present invention.

11 is a schematic view showing the arrangement of the positive and negative electrode leads of the embodiment of the present invention.

12 is a schematic structural view of positive and negative positive and negative electrodes of a solar cell according to an embodiment of the present invention.

13 is a schematic structural view of a solar cell photovoltaic panel photovoltaic power generation device according to an embodiment of the present invention.

[32] FIG. 14 is a schematic diagram of a solar cooker structure of a solar cell photovoltaic panel photovoltaic power generation device according to an embodiment of the present invention;

[33] Specific implementation

The invention will be further described in detail below with reference to the drawings and embodiments. As shown in FIG. 2, the photovoltaic panel of the prior art solar cell is composed of a P-type layer 1 and an N+-type layer 2 connected together, a negative electrode lead 3 is disposed on the N+-type layer 2, and a positive electrode is disposed on the P-type layer. Electrode lead 4.

[35] As shown in FIG. 1, the photovoltaic panel of the solar cell of the present invention is sequentially formed into a P-type layer 1 and an N+ type by a semiconductor manufacturing process on both surfaces I and Π of the N-type layer 5 of the semiconductor substrate. Layer 2, N+ type layer 2 is grown with a protective layer 6, and the P-type layer 1, the N+ type layer 2 and the protective layer 6 on both sides of the N-type layer 5 of the semiconductor substrate are planar or tapered microcrystals processed by the suede technique. The surface has a thickness of 160-220 um. The middle N-type layer can be regarded as the isolation layer of the I side and the II side, or it is not necessary.

Electrode leads are respectively disposed on the P-type layer and the N+-type layer.

[36] As shown in Figure 3, in electricity

The N+ type layer 2 is diffused on the front and back surfaces of the silicon wafer of the P type layer 1 having a resistivity of 3Q/cm to form an N+PN+ structure, wherein the silicon substrate of the P type layer 1 is shared by the I plane and the surface of the wafer. The two N+ type layers 2 are phosphorus diffusion N+ type layers, and on the N+ type layer, a negative electrode lead 3 having a width of 0.1 mm is respectively disposed at a pitch of about 2-4 mm, and the P type layer 1 is low and cumbersome. P-type single (multi) crystal silicon substrate. As with the N+ type layer 2, a positive electrode electrode bow line 4 having a width of 0.1 mm is respectively disposed at a pitch of about 2-4 mm, and a positive electrode electrode bow line 4 is disposed on the P type layer 1 in the N+ type layer. 2 diffusion region, the front and back surfaces of the silicon oxide or silicon nitride anti-reflection film The protective layer, the total thickness of the silicon wafer is 160-220 um.

[37] As shown in Figure 4, in electricity

The N+ type layer 2 is diffused on the front and back surfaces of the silicon wafer of the P type layer 1 having a resistivity of 3Q/cm to form an N+PN+ structure, wherein the silicon substrate of the P type layer 1 is shared by the I plane and the surface of the wafer. The two N+ type layers 2 are phosphorus diffusion N+ type layers, and on the N+ type layer, a negative electrode lead 3 having a width of 0.1 mm is respectively disposed at a pitch of about 2-4 mm, and the P type layer 1 is low and cumbersome. P-type single or polycrystalline silicon substrate. A positive electrode lead 4 having a width of 0.1 mm and a positive electrode lead 4 are disposed on the P-type layer 1 at a distance of about 2-4 mm from the surface of the P-type silicon wafer and the surface of the P-type silicon wafer. The upper, N+ type layer 2 diffusion region, the surface of the I surface and the germanium surface is grown with a light-reflecting film protective layer of silicon oxide or silicon nitride, and the total thickness of the silicon wafer is 160-220 um.

[38] As shown in FIG. 5, the photovoltaic panel of the solar cell of the present invention has a structure of N+PN-PN+ structure, and has a low-complexity N-type layer 5 having a high resistivity of 8 Q/cm and a thickness of 160-200 um. The silicon substrate is subjected to gallium diffusion at a high temperature of 1200 ° C, and a 40-80 μm P-type layer 1 is formed on both sides to form a PN-P structure, and then an N + -type layer diffusion 2 is formed on the P-type layer. N+PN-PN+ layer structure, the upper layer N+P junction structure constitutes an I plane, the lower layer PN+ junction structure constitutes a germanium plane, and the two N+ type layer 2 are a phosphorus diffusion N+ type layer 2, on the N+ type layer 2 A negative electrode lead 3 made of aluminum, silver or another metal layer having a width of 0.1 mm is provided at a distance of about 2-4 mm, and the P-type layer 1 is a low-powder P-type diffusion layer. As with the N+ type layer 2, a positive electrode lead 4 having a width of 0.1 mm is respectively disposed at a pitch of about 2-4 mm, and the positive electrode lead 4 is disposed on the P type layer 1 and the N+ type layer 2 diffusion region. A protective layer of silicon oxide or silicon nitride is grown on the surface of the I-face or the surface. When the sun shines on the I face, the upper layer N+P

The self-built electric field formed by the junction will transfer the photo-generated unbalanced carriers -- 'electrons' and 'holes' to the regions and P regions and form photocurrents. Similarly, when the sun shines on the face, PN+

The self-built electric field will transfer the unbalanced carriers generated by the above layers of light, 'electrons' and 'holes', to the zone and P zone, and form photocurrent.

[39] The N-type layer pattern of the I plane according to the present invention may be a full-surface diffusion pattern structure, a comb-comb diffusion pattern structure, a comb-like diffusion pattern structure or a mesh diffusion pattern structure, and the N+ type of the surface The layer may be a mesh diffusion pattern structure, a comb-comb diffusion pattern structure or a comb diffusion pattern structure must have a positive electrode bow I line.

[40] As shown in Fig. 6, the N+ type layer of the present invention is formed into a full-surface pattern structure after being diffused.

As shown in Fig. 7, the N+ type layer of the present invention is formed into a comb-comb pattern structure after being diffused. As shown in FIG. 8, the N+ type layer of the present invention is formed into a comb-like pattern structure after being diffused.

As shown in Fig. 9, the N+ type layer of the present invention forms a square grid pattern after diffusion.

As shown in Fig. 10, the arrangement of the negative electrode leads of the present invention is a P-type layer comb window pattern structure.

[45] As shown in FIG. 11, the positive and negative electrode lead wires of the embodiment of the present invention are disposed in the middle, and the positive electrode lead of the comb structure is disposed on both sides, and a schematic diagram of a staggered arrangement of the positive electrode lead wires of the comb structure is shown.

[46] As shown in FIG. 12, in the front and back surfaces of the solar cell sheet of the present invention, a negative electrode fine lead is disposed laterally on the N+ type layer, and a negative electrode thick is vertically disposed on the negative electrode fine lead at a certain pitch. lead

. A positive electrode fine lead is disposed laterally on the P-type layer, and a positive electrode thick lead is vertically disposed on the positive electrode thin lead at a predetermined pitch. The negative electrode thick lead is spaced apart from the positive electrode thick lead.

As shown in FIG. 13, the solar photovoltaic power generation device with photovoltaic panels of the present invention is provided with a light reflecting plate 20 below the photovoltaic panel 10. The reflector 20 is arcuate or planar.

[48] In order to achieve optimal illumination of photovoltaic panels consisting of I-face: To adjust solar cell photovoltaic panels

The normal direction of the plate surface is to be aligned with the sun, so the adjustment is performed manually or automatically by installing the concentrator control mechanism. The concentrator control mechanism

Including the solar cell placement frame 11, the regulator placed in the reflector placement frame 21, adjusted

The solar cell placement rack 11 enables the solar cell to achieve optimal power generation.

[49] In order to obtain the best light effect for the photovoltaic panels consisting of the kneading surface: the area and curvature of the reflector 20 can be adjusted according to the geographical location, the sunlight intensity, and the temperature conditions.

, to achieve the best power generation effect of solar cell photovoltaic panels composed of kneads. That is, the amount of light increases, the photo-generated current also increases, and the utilization rate of solar cells can be increased by more than two times.

[50] As shown in Fig. 14, the solar cooker structure of the solar photovoltaic power generation apparatus with double-sided photovoltaic panels of the present invention is shown. Its working principle, function and so on can be explained with reference to Figure 13.

[51] Using the solar power generation device of the present invention, the double-sided photovoltaic panel has a diameter of 4.4 cm and about 15 cm 2

The positive and negative N+ type layers are comb-like structures, and the current area of the solar photovoltaic power generation device of the present invention is measured at 550 ma under the same sunlight conditions.

The current of the prior art solar power generation device is 310ma.

[52] One of the principles of the present invention is: 'Water pipe effect'.

Two batteries with different voltages cannot be connected in parallel; if one piece of silicon is used for both positive and negative sides Into PN junctions, due to their 'photovoltaic efficiency'

Different from the received light intensity, the generated photovoltaic and current values are different. It is reasonable that their positive and negative poles cannot be connected in parallel. However, the positive and negative PN of a piece of silicon

They are like two water pipes. The photoelectric effect is high and the water is thicker than the water pipe. On the contrary, the water pipe is thinner, and the current is like the water flowing out of the two water pipes. The photo-generated current is large due to strong illumination. On the contrary, the current is small and they have little influence on each other. Therefore, it can be ignored. Therefore, a double-sided PN junction with good performance is fabricated, and the front and back solar cells are output in parallel, and the photocurrent is equal to the sum of the two PN junction currents.

[53] In the trial production of double-sided solar cells, we have discovered semiconductor physical phenomena. Water pipe effect ': [54] I. Double-sided solar cells with poor water performance: Due to the 'photovoltaic efficiency' of solar cells I and II

Different from the received light intensity, their photo-generated current and voltage difference are large. Therefore, pay attention to the connection method of the positive and negative electrodes of the photocell: The solar cell group should be divided into two groups of power sources. A group of one surface of each solar cell is connected in series.笫Two groups of solar cells II

The faces are connected in series, and the ports can be connected to two loads (for example, two sets of power supplies).

[55] Second, double-sided solar cells with good water performance: I face and II of each piece

The positive electrodes of the faces are coupled together, and the negative electrodes are also coupled together and then connected in series to form a group of solar cells. Even if the difference in light intensity between the two sides is too great, the power loss is small.

[56] The second principle of the invention is:

The solar cell selects the pattern on the positive and negative sides of the P-type silicon wafer, and performs phosphorus diffusion to produce the N+P junction, which can produce photovoltaic effect on both the positive and negative sides, enlarge the PN junction area, and increase the total area of the PN+ junction.

[37] The third principle of the invention is:

With a silicon wafer of 160--220 um thickness, in this structure, each PN+ junction controls a thickness of about 100 μm, and the diffusion movement distance of photogenerated carriers is 1/2 less than that of the existing single-sided solar cell. The composite of photogenerated carriers is reduced.

[58] The fourth principle of the invention is:

By using stereoscopic light, multiplying the amount of light and making full use of sunlight, the positive and negative sides of the solar cell can generate photocurrent, which increases the photocurrent, and can be designed according to the solar cell module per square meter; according to the intensity of sunlight in the area, The temperature is high and low to design the best photocurrent effect. [59] The solar cell of the present invention differs in the pattern structure of the selected N+ type layer diffusion depending on the region. In the glare region, due to the large photo-generated current of the solar cell, there are positive and negative electrode leads on the I and the surface, and a comb-like diffusion pattern on the N+-type layer. In the low-light region, the photo-generated current of the solar cell Small, the positive surface of the solar cell uses only the negative electrode lead, and the N+ type diffusion uses a planar diffusion pattern structure or a mesh diffusion pattern structure.

[60] The solar cell module of the present invention and the solar photovoltaic power generation device with the same can greatly increase the efficiency of use of the silicon wafer of the [61] solar cell, and it is convenient to concentrate the sunlight on the silicon wafer by using the reflector. The use of silicon wafers and sunlight is fully utilized, and the cost per watt of solar cells is greatly reduced, which will greatly promote the development of solar cells.

Claims

Claim

A photovoltaic panel for a solar cell, comprising a silicon wafer, characterized in that: two surfaces of the silicon wafer are respectively formed by a semiconductor manufacturing process to form a PN junction having a photoelectric effect, and on both surfaces of the silicon wafer PN On the junction, electrode leads are respectively provided.

The photovoltaic panel of a solar cell according to claim 1, wherein: the PN junction pattern formed by the two surfaces is a full-surface diffusion pattern, a mesh diffusion pattern, a comb-like diffusion pattern or a comb- Comb-like diffusion pattern.

The photovoltaic panel of a solar cell according to claim 1 or 2, wherein: the silicon wafer is an N-type silicon wafer, and two surfaces of the N-type silicon wafer are respectively formed by a semiconductor manufacturing process, and sequentially forming a P The pattern layer and the N+ type layer are respectively provided with electrode leads on the P type layer and the N+ type layer.

The photovoltaic panel of a solar cell according to claim 3, wherein: the N+ type layer is provided with a negative electrode lead having a width of 0.1 mm, respectively, at a distance of 2-4 mm, and the P type layer is spaced apart by 2 A positive electrode lead having a width of 0.1 mm was respectively provided at a pitch of -4 mm.

The photovoltaic panel of a solar cell according to claim 1 or 2, wherein: the silicon wafer is a P or N type silicon wafer, and the two surfaces of the P or N type silicon wafer are respectively formed into a N+ by a semiconductor manufacturing process. Or a P+ type layer, wherein the P or N type layer and the N+ or P+ type layer are respectively provided with electrode leads.

The photovoltaic panel of a solar cell according to claim 5, wherein: the N+ or P+ type layers are respectively provided with a negative or positive electrode lead having a width of 0.1 mm at a distance of 2-4 mm, wherein the P Or the N-type layers are respectively provided with a positive or negative electrode lead having a width of 0.1 mm at a distance of 2-4 mm.

_7. A concentrating power generation device with a solar cell photovoltaic panel, a photovoltaic panel including a solar cell

, characterized in that: two surfaces of the silicon wafer of the photovoltaic panel are respectively formed into a PN junction having a photoelectric effect by a semiconductor manufacturing process, and electrode leads are respectively disposed on the two surface PN junctions of the silicon wafer, respectively. A reflector is disposed below the surface of the wafer, and the reflector is disposed on the reflector control mechanism.

The concentrating power generation device with a solar cell photovoltaic panel according to claim 7, wherein: the silicon wafer is an N-type silicon wafer, and two surfaces of the N-type silicon wafer are respectively passed

a semiconductor manufacturing process in which a P-type layer and an N+-type layer are sequentially formed, Electrode leads are respectively disposed on the P-type layer and the N+-type layer.

The concentrating power generation device with a solar cell photovoltaic panel according to claim 7, wherein: the silicon wafer is a P-type or N-type silicon wafer, and two surfaces of the P-type or N-type silicon wafer are respectively Forming an N+ type or P+ type layer by a semiconductor manufacturing process,

Electrode leads are respectively disposed on the P-type or N-type layer and the N+-type or P+-type layer.

The concentrating power generation device with a solar cell photovoltaic panel according to claim 7, 8 or 9, wherein: the reflector control mechanism comprises a photovoltaic panel placement frame, a reflector placement frame, a bracket and a sun-conditioning adjustment Device.