WO2009141655A2 - Générateur de faisceau de particules amélioré - Google Patents

Générateur de faisceau de particules amélioré Download PDF

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Publication number
WO2009141655A2
WO2009141655A2 PCT/GB2009/050547 GB2009050547W WO2009141655A2 WO 2009141655 A2 WO2009141655 A2 WO 2009141655A2 GB 2009050547 W GB2009050547 W GB 2009050547W WO 2009141655 A2 WO2009141655 A2 WO 2009141655A2
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
electrodes
particles
source member
diameter
Prior art date
Application number
PCT/GB2009/050547
Other languages
English (en)
Other versions
WO2009141655A3 (fr
Inventor
Derek Eastham
Original Assignee
Nfab Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nfab Limited filed Critical Nfab Limited
Publication of WO2009141655A2 publication Critical patent/WO2009141655A2/fr
Publication of WO2009141655A3 publication Critical patent/WO2009141655A3/fr

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/10Lenses
    • H01J37/12Lenses electrostatic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06Electron sources; Electron guns
    • H01J37/063Geometrical arrangement of electrodes for beam-forming
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04Means for controlling the discharge
    • H01J2237/049Focusing means
    • H01J2237/0492Lens systems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06Sources
    • H01J2237/061Construction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06Sources
    • H01J2237/063Electron sources
    • H01J2237/06325Cold-cathode sources
    • H01J2237/06341Field emission
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06Sources
    • H01J2237/063Electron sources
    • H01J2237/06375Arrangement of electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10Lenses
    • H01J2237/12Lenses electrostatic
    • H01J2237/1205Microlenses

Definitions

  • the microscope size and, importantly, the focal length need to be below about 100 microns.
  • the beam diameter in the instrument should be only a small fraction of the aperture diameter, since it is known that the aberrations in an electron microscope become small if the ratio of the beam diameter to the aperture diameter is small. This ratio may be referred to as the fill factor.
  • Reference to the size of the beam spot is intended to mean reference to the size of the cross-section of the beam at the focal point of the beam. This is typically measured in terms of the diameter of the beam at this location, and may be referred to as the 'beam diameter' at the focal point, or 'focussed beam spot diameter'. It is to be understood that the beam cross-section may not necessary be circular.
  • the performance of the microscope which may be measured by the diameter of the focussed beam spot, depends on the size of the field emission sites on the nanotip.
  • the size of the image of the field emission site and hence the resolution of the microscope may be made to be of atomic dimensions.
  • FIG. 1 shows a known nanotip 10 having a tip radius R of around 5nm.
  • Other larger tip radii are also useful particularly when an atomically sharp nanotip is to be provided. Smaller tip radii are also useful in some embodiments.
  • the nanotip 10 is formed from single crystal tungsten. Other materials are also useful.
  • a stable structure in the form of a tetrahedron of gold atoms 12 is formed on the nanotip as shown in FIG. 1 (b).
  • the tetrahedron has a single atom at an apex located away from a main body portion 1 1 of the nanotip 10.
  • This atom provides an electron source when an electric field of sufficiently high magnitude is generated between the nanotip 10 and an external electrode.
  • the angle of emission of the electrons is small and can be as low as 6 degrees ensuring that an electron beam generated by the microscope has a relatively small cross-sectional area. This allows a relatively low value of the fill factor to be obtained.
  • This application is concerned with improvements in the optical configuration of the microscope.
  • the application is concerned with improvements in the way in which particles such as electrons are accelerated and focussed.
  • particle beam generator apparatus comprising: a source member; a first electrode; and a second electrode, the generator being operable to extract particles from the source member by means of a potential difference applied between the source member and the first electrode, the first electrode being arranged to focus the particles toward a focal point a distance F1 from the first electrode, the second electrode being arranged to focus the particles to a point a distance F1 ' from the first electrode, distance F1 ' being greater than distance F1 thereby to increase an effective focal length of the first electrode.
  • Embodiments of the invention have the advantage that particles may be both focussed by the first electrode and accelerated in the region between the first and second electrodes.
  • only one insulator is required in the region between the first and second electrodes thereby simplifying a manufacturing process of the generator.
  • no insulator is required in the region between the first and second electrodes.
  • the first and second electrodes are provided in the form of plate members, each plate member being provided with an aperture therethrough, the apparatus being arranged whereby particles extracted from the source member pass through the apertures in the plate members.
  • the electrodes may be other than plate members, such as ring members or any other kind of member.
  • the apparatus is arranged such that a diameter of a particle beam extracted from the source member and focussed by the first and second electrodes is less than a diameter of the apertures formed in the first and second electrodes.
  • an aberration of the particle beam may be reduced.
  • a chromatic aberration of the particle beam may be reduced.
  • a spherical aberration of the particle beam may be reduced.
  • embodiments of the invention provide a simplified particle beam generator requiring only two electrode lenses compared with embodiments of a particle beam generator disclosed in PCT/GB2008/050050 by the present applicants, which have four electrode lenses.
  • Embodiments of particle beam generator apparatus disclosed in PCT/GB2008/050050 and in Journal of Applied Physics 105 147029 (2009) are arranged to image directly an emission site of a source of particles such as electrons and have little or no aberrations. This is believed to be at least in part because the particle beam has a diameter less than that of the aperture through which the beam passes, such that the effects of electron diffraction may be ignored.
  • Embodiments of the present invention also have little or no aberrations and this is also believed to be at least in part because the particle beam has a diameter less than that of the aperture through which the beam passes, such that the effects of electron diffraction may be ignored.
  • embodiments of the present invention in the form of scanning electron microscopes may be fabricated more cheaply than convention large scale scanning electron microscopes employing magnetic lenses and the like.
  • the diameter of the particle beam extracted from the source member and focussed by the first and second electrodes may be substantially equal to or less than one half of the diameter of the apertures formed in the first and second electrodes.
  • the diameter of the particle beam extracted from the source member and focussed by the first and second electrodes may be substantially equal to or less than one tenth of the diameter of the apertures formed in the first and second electrodes.
  • the source member is provided with a free end having at least one atomically sharp element provided thereon.
  • the source member may comprise a primary tip element and a secondary tip element, the secondary tip element being supported by the primary tip element, the secondary tip element providing said atomically sharp point and being arranged in use to emit particles.
  • the secondary tip element comprises a substantially tetrahedral arrangement of atoms.
  • the secondary tip element may comprise one selected from amongst gold, platinum and iridium or a mixture thereof.
  • the particles may comprise at least one selected from amongst electrons, ions and protons.
  • the particles may consist essentially of at least one selected from amongst electrons, ions and protons.
  • Electrodes may be provided, respective electrodes being arranged whereby alternate electrodes provide one of either a focusing effect or a defocusing effect and the other electrodes provide the other of either the focusing effect or defocusing effect.
  • a method of generating a beam of particles comprising: extracting particles from a source member by means of a potential difference applied between the source member and a first electrode; focussing the particles by means of the first electrode toward a focal point a distance F1 from the first electrode; focussing the particles by means of a second electrode spaced apart from the first electrode downstream of a flux of the particles to a point a distance F1 ' from the first electrode, distance F1 ' being greater than distance F1 thereby to increase an effective focal length of the first electrode.
  • the method further comprises the step of applying respective potentials to the source member, first electrode and second electrode.
  • first and second electrodes are each provided with an aperture therethrough.
  • the method further comprises the step of extracting particles from the source member and passing the particles through the apertures in the first and second electrodes.
  • a diameter of a particle beam extracted from the source member and passing through the apertures in the first and second electrodes is less than a diameter of the apertures.
  • the diameter of the particle beam extracted from the source member and passing through the first and second electrodes is substantially equal to or less than one half of the diameter of the apertures formed in the first and second electrodes.
  • the diameter of the particle beam extracted from the source member and passing through the first and second electrodes may be substantially equal to or less than one tenth of the diameter of the apertures formed in the first and second electrodes.
  • the method may comprise providing at least four electrodes and applying respective potentials to the electrodes thereby to cause alternately a focusing and defocusing effect on an electron beam propagating through the respective electrodes.
  • FIGURE 1 is a schematic diagram of (a) a primary tip element and (b) a primary tip element having a secondary tip element thereon in the form of a tetrahedral arrangement of gold atoms;
  • FIGURE 2 is a schematic illustration of an optical arrangement of an electron beam generator according to a previous patent application by the present applicants;
  • FIGURE 3 is a schematic illustration of an electron optical arrangement according to an embodiment of the present invention.
  • FIGURE 4 shows (a) an embodiment of the invention having a pair of lenses in the form of perforated electrodes and (b), (c) the structure of first electrodes according to further embodiments of the invention.
  • FIGURE 5 shows a computer simulation of electron trajectories in one embodiment of the invention.
  • FIG. 2 Apparatus according to an electron microscope disclosed in a previous application by the present applicants is shown in FIG. 2.
  • electrons 3 emitted by a nanotip 1 having an energy corresponding to the potential difference between the nanotip and a first electrode 2 having an aperture provided therein were first focussed by the first electrode 2 (also referred to as an entrance lens) and subsequently accelerated in an accelerator section labelled Ace.
  • the accelerator section Ace is provided with an accelerator electrode 4.
  • a potential difference is established between the accelerator electrode 4 and the first electrode 2 to cause electrons emitted by the nanotip 1 to increase in energy as they pass through the accelerator section Ace.
  • An einzel lens 6 downstream from the accelerator section Ace was used to focus the electrons to a focal point 5 of the einzel lens 6 thereby forming a 'beam spot' on any object located at the focal point 5.
  • FIG. 3 shows an optical arrangement of an electron microscope according to an embodiment of the present invention in which electrons emitted by a nanotip 10 are drawn towards an entrance lens 20 and focussed by the entrance lens 20.
  • the entrance lens 20 is provided by a first electrode 22 (FIG. 4) in the form of a perforated conducting plate.
  • the electrons are then accelerated towards an exit lens 40, which is provided by a second electrode 42 (FIG. 3).
  • the exit lens 40 acts as a concave lens whereas the first lens 20 acts as convex lens. That is, the entrance lens 20 (or 'first lens') causes the electrons to converge more strongly towards a notional point being the focal point of the first lens 20 whilst the exit lens 40 causes a divergence of a path of the electrons whereby the electrons converge less strongly.
  • the lens characteristics are typically not adjustable independently - the equipotentials are almost the same in both but the second lens is weaker because the energy of electrons passing through the exit lens 40 is higher than that of electrons passing through the entrance lens 20.
  • the exit lens 40 (or 'second lens') also acts in an opposite direction to the first in that a trajectory of electrons passing through the second lens is adjusted whereby an angle between the electron trajectory and optic axis of the arrangement is decreased.
  • rays are bent outwardly by the second lens but inwardly by the entrance lens such that an effective focal length of the two lenses is greater than the actual focal length of the entrance lens 20 in the absence of the exit lens 40.
  • the effective focal point of the entrance lens 20 is a point 50 a distance F from the entrance lens 20.
  • the effectiveness of the second electrode 42 as a lens is reduced for a given applied potential due to the increased energy of the electrons following their acceleration in the region between the first and second electrodes 22, 42.
  • a focal point of the electron beam is formed beyond the second electrode 42 at a position indicated at 50 in FIG. 3 and FIG. 4.
  • FIG. 3 and FIG. 4 allow a more simple electron microscope structure to be formed.
  • a structure having only one insulator may be formed, the insulator being sandwiched between the first and second electrodes.
  • no material is provided between the first and second electrodes.
  • the gap may be evacuated. Alternatively the gap may be gas-filled, for example air-filled.
  • first and second electrodes are supported by support members that are electrically isolated from one another.
  • the support members are individually movable with respect to one another thereby to allow precise alignment of the electrodes.
  • One or both of the support members may comprise one or more nanopositioning elements.
  • the nanotip 10 is positioned around 100nm from the first electrode 22. In some embodiments a different distance may be used. In some embodiments this distance is of the order of 1 to 10 microns or more.
  • the first electrode is formed from a conducting plate element around 1 ⁇ m in thickness and has an aperture of diameter d2.
  • d2 is around 0.5 ⁇ m but can be up to 5 ⁇ m.
  • a potential V p is applied to the first electrode, V p being typically around - 1000 V.
  • a potential V, of around -1020 V is applied to the nanotip 10 with the nanotip 10 arranged to be around 100nm from the first electrode.
  • the values of the potentials applied to the first electrode 22 and the nanotip 10 may be varied thereby to vary the energy of the electron beam incident on a specimen exposed to the electron beam.
  • the energy of the electron beam can also be varied by adjusting the position of the nanotip 10 and the voltages on both the nanotip 10 and the first electrode 22.
  • the first electrode 22 may also be referred to as an extraction electrode 22.
  • the second electrode 42 is also in the form of a conducting plate element and has a thickness of around 1 ⁇ m. It is typically positioned around 6 ⁇ m from the first electrode
  • the second electrode is at earth potential and has an aperture formed therein of the same diameter as an aperture formed in the first electrode.
  • the apertures formed in the first and second electrodes are arranged to be formed in a central portion of each electrode.
  • the first and second electrodes are substantially circular in shape.
  • the size of the aperture formed in the second electrode is different to that of the aperture formed in the first electrode. Changing the size of this aperture allows a strength of an effect of the electrode on the electron beam to be changed.
  • An electron beam formed by extraction of electrons from the nanotip 10 is focussed by the entrance lens and accelerated in the region between the first and second electrodes 22, 42 following a trajectory illustrated in FIG. 3.
  • the dimensions provided above are only a guide since other combinations of dimensions will produce substantially the same effect as long as the overall geometry of the arrangement is preserved, and the focal length d3 is less than about 50 ⁇ m.
  • the field at the tip may be adjusted by both changing the tip voltage (the potential difference between the first electrode and the tip, V p -V,) and the distance between the nanotip 10 and the first electrode 22 so that the field emission current does not exceed 1 nA. This is because in some cases the tip may be damaged if a current in excess of this value is drawn from the nanotip 10.
  • FIG. 5 shows a computer simulation of electron trajectories for an electron microscope optical arrangement where the nanotip 10 (which is provided at a potential of around -1020 volts) is positioned around 100 nm from the first electrode 22 (also referred to as an extractor plate) which is provided at a potential of around -1000 volts.
  • the nanotip 10 which is provided at a potential of around -1020 volts
  • the first electrode 22 also referred to as an extractor plate
  • the simulation uses a point source with a half angle of emission of around 6°.
  • the beam is focussed to a spot having a diameter of around 1 .5 A at a distance of around 10 ⁇ m beyond the second aperture 42.
  • the beam spot diameter including the effects of aberrations is 1 .5 A.
  • An atomic emitter would give a spot size of V2 x 1 .5 A.
  • a series of stages of substantially planar, substantially parallel electrodes are provided in a stacked arrangement such that a higher energy electron beam can be obtained.
  • the electrodes are arranged whereby an electron beam path is provided through the series of stages along a direction substantially perpendicular to a plane of each electrode.
  • a first potential is applied to the source of electrons being a nanotip, and second, third and fourth potentials are applied to a series of three electrodes placed in succession adjacent the source.
  • the first potential is -2020V
  • the second potential is -2000V
  • the third potential is -1200V
  • the fourth potential is OV.
  • Other potentials are also useful.
  • the final electrode downstream from the source is provided at ground (earth) potential.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Particle Accelerators (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

L'invention porte, selon des modes de réalisation de l'invention, sur un appareil générateur de faisceau de particules comprenant : un élément source; une première électrode; et une seconde électrode, le générateur étant utilisable pour extraire des particules de l'élément source au moyen d'une différence de potentiel appliquée entre l'élément source et la première électrode, la première électrode étant agencée pour concentrer les particules vers un foyer situé à une distance F1 de la première électrode, la seconde électrode étant agencée pour concentrer les particules en un point situé à une distance F1' de la première électrode, la distance F1' étant supérieure à la distance F1 pour ainsi augmenter une longueur focale effective de la première électrode.
PCT/GB2009/050547 2008-05-22 2009-05-20 Générateur de faisceau de particules amélioré WO2009141655A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0809331.2 2008-05-22
GB0809331A GB0809331D0 (en) 2008-05-22 2008-05-22 Improved electron beam generator

Publications (2)

Publication Number Publication Date
WO2009141655A2 true WO2009141655A2 (fr) 2009-11-26
WO2009141655A3 WO2009141655A3 (fr) 2010-09-16

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PCT/GB2009/050547 WO2009141655A2 (fr) 2008-05-22 2009-05-20 Générateur de faisceau de particules amélioré

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GB (1) GB0809331D0 (fr)
WO (1) WO2009141655A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011089439A2 (fr) 2010-01-21 2011-07-28 Nfab Limited Générateur de faisceau d'électrons à faible énergie miniature

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5968143A (ja) * 1982-10-08 1984-04-18 Fujitsu Ltd 電界電離ガスイオン源用エミツタチツプ
US5126574A (en) * 1989-10-10 1992-06-30 The United States Of America As Represented By The Secretary Of Commerce Microtip-controlled nanostructure fabrication and multi-tipped field-emission tool for parallel-process nanostructure fabrication
EP0632680A1 (fr) * 1993-06-30 1995-01-04 Texas Instruments Incorporated Protecteur et procédé antistatiques
EP1134771A1 (fr) * 2000-03-16 2001-09-19 Hitachi Europe Limited Appareil pour la production d'un flux de porteurs de charge
US6593686B1 (en) * 1999-03-30 2003-07-15 Canon Kabushiki Kaisha Electron gun and electron beam drawing apparatus using the same
JP2005127800A (ja) * 2003-10-22 2005-05-19 Toshiba Corp 電子線照射装置と照射方法および電子線描画装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5968143A (ja) * 1982-10-08 1984-04-18 Fujitsu Ltd 電界電離ガスイオン源用エミツタチツプ
US5126574A (en) * 1989-10-10 1992-06-30 The United States Of America As Represented By The Secretary Of Commerce Microtip-controlled nanostructure fabrication and multi-tipped field-emission tool for parallel-process nanostructure fabrication
EP0632680A1 (fr) * 1993-06-30 1995-01-04 Texas Instruments Incorporated Protecteur et procédé antistatiques
US6593686B1 (en) * 1999-03-30 2003-07-15 Canon Kabushiki Kaisha Electron gun and electron beam drawing apparatus using the same
EP1134771A1 (fr) * 2000-03-16 2001-09-19 Hitachi Europe Limited Appareil pour la production d'un flux de porteurs de charge
JP2005127800A (ja) * 2003-10-22 2005-05-19 Toshiba Corp 電子線照射装置と照射方法および電子線描画装置

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
J. GROSSER: "Einführung in die Teichenoptik" 1983, TEUBNER STUDIENBÜCHER , STUTTGART , XP002545104 ISBN: 3-519-03050-0 page 25; figure e *
SIEGFRIED SCHILLER / ULLRICH HEISIG / SIEGFRIED PANZER: "Electron Beam Technology" 1982, WILEY-INTERSCIENCE , BERLIN , XP002545103 ISBN: 0-471-06056-9 page 59; figure f *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011089439A2 (fr) 2010-01-21 2011-07-28 Nfab Limited Générateur de faisceau d'électrons à faible énergie miniature

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WO2009141655A3 (fr) 2010-09-16
GB0809331D0 (en) 2008-07-02

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