WO2009119974A3 - Ｒｆ 스위칭 장치 및 방법 - Google Patents

Ｒｆ 스위칭 장치 및 방법 Download PDF

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Publication number
WO2009119974A3
WO2009119974A3 PCT/KR2009/000536 KR2009000536W WO2009119974A3 WO 2009119974 A3 WO2009119974 A3 WO 2009119974A3 KR 2009000536 W KR2009000536 W KR 2009000536W WO 2009119974 A3 WO2009119974 A3 WO 2009119974A3
Authority
WO
WIPO (PCT)
Prior art keywords
switching device
same
cutting
passing
frequency signals
Prior art date
Application number
PCT/KR2009/000536
Other languages
English (en)
French (fr)
Other versions
WO2009119974A2 (ko
Inventor
이종수
Original Assignee
광주과학기술원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 광주과학기술원 filed Critical 광주과학기술원
Priority to US12/934,999 priority Critical patent/US8339180B2/en
Publication of WO2009119974A2 publication Critical patent/WO2009119974A2/ko
Publication of WO2009119974A3 publication Critical patent/WO2009119974A3/ko

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
    • H04B1/006—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band using switches for selecting the desired band
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H04B1/48—Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Dc-Dc Converters (AREA)
  • Power Conversion In General (AREA)

Abstract

RF 스위칭 장치 및 방법이 개시된다. 본 발명에 따른 RF 스위칭 장치는, 게이트에 인가되는 구동 전압에 따라 고주파 신호를 통과 또는 차단시키는 복수 개의 FET; 상기 고주파 신호의 통과 또는 차단을 제어하기 위한 제어 전압을 생성하는 제어 전원; 및 상기 제어 전압의 레벨을 증가시켜 상기 구동 전압으로서 출력하는 전하 펌프를 포함하는 것을 특징으로 한다. 이러한 본 발명에 의하면 RF 스위치에서 발생하는 삽입 손실을 최소화할 수 있다.
PCT/KR2009/000536 2008-03-27 2009-02-04 Ｒｆ 스위칭 장치 및 방법 WO2009119974A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/934,999 US8339180B2 (en) 2008-03-27 2009-02-04 RF switching device and method therefor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0028383 2008-03-27
KR1020080028383A KR100980112B1 (ko) 2008-03-27 2008-03-27 Ｒｆ 스위칭 장치 및 방법

Publications (2)

Publication Number Publication Date
WO2009119974A2 WO2009119974A2 (ko) 2009-10-01
WO2009119974A3 true WO2009119974A3 (ko) 2009-11-05

Family

ID=41114431

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/000536 WO2009119974A2 (ko) 2008-03-27 2009-02-04 Ｒｆ 스위칭 장치 및 방법

Country Status (3)

Country Link
US (1) US8339180B2 (ko)
KR (1) KR100980112B1 (ko)
WO (1) WO2009119974A2 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5650431B2 (ja) * 2010-04-14 2015-01-07 ラピスセミコンダクタ株式会社 チャージポンプ型の昇圧回路及び昇圧方法
US8396099B2 (en) * 2010-08-19 2013-03-12 Industrial Technology Research Institute Multi-carrier receiver, multi-carrier transmitter and multi-carrier transceiver system
US8547157B1 (en) * 2012-04-25 2013-10-01 Triquint Semiconductor, Inc. Radio frequency switching device with fast transient response time
KR101319731B1 (ko) 2012-04-26 2013-10-17 삼성전기주식회사 무선통신 시스템에서의 송수신 신호 스위칭 타임 제어회로
DE102016114676B4 (de) * 2016-08-08 2023-08-03 Infineon Technologies Ag Vorrichtung zur Transformation einer elektrischen Leistung einer elektromagnetischen Welle in ein elektrisches Gleichspannungssignal

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0177145B1 (ko) * 1989-11-08 1999-04-01 존 지. 웨브 전력 fet용 적응 게이트 충전 회로
US20020123186A1 (en) * 2001-02-13 2002-09-05 Autonetworks Technologies, Ltd. Semiconductor circuit components
KR20060038442A (ko) * 2003-07-10 2006-05-03 퀄컴 인코포레이티드 저전력 ｎ―ｆｅｔ 하이―사이드 스위치
US20070120103A1 (en) * 2001-10-10 2007-05-31 Burgener Mark L Switch circuit and method of switching radio frequency signals

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200505162A (en) * 2003-04-14 2005-02-01 Sanyo Electric Co Charge pump circuit
JP3790227B2 (ja) * 2003-04-16 2006-06-28 松下電器産業株式会社 高周波スイッチ回路
JP2007028178A (ja) * 2005-07-15 2007-02-01 Eudyna Devices Inc 半導体装置およびその制御方法
JP4724498B2 (ja) * 2005-08-30 2011-07-13 ルネサスエレクトロニクス株式会社 半導体集積回路装置および高周波電力増幅モジュール
JP4712492B2 (ja) * 2005-08-31 2011-06-29 ルネサスエレクトロニクス株式会社 半導体集積回路装置および高周波電力増幅モジュール
US7279961B2 (en) * 2005-11-21 2007-10-09 Atmel Corporation Charge pump for intermediate voltage
JP2008205794A (ja) * 2007-02-20 2008-09-04 Renesas Technology Corp 半導体集積回路装置および高周波電力増幅モジュール
JP5189958B2 (ja) * 2008-11-10 2013-04-24 ルネサスエレクトロニクス株式会社 半導体集積回路およびそれを内蔵した高周波モジュール
US10056895B2 (en) * 2010-04-27 2018-08-21 Qorvo Us, Inc. High power FET switch

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0177145B1 (ko) * 1989-11-08 1999-04-01 존 지. 웨브 전력 fet용 적응 게이트 충전 회로
US20020123186A1 (en) * 2001-02-13 2002-09-05 Autonetworks Technologies, Ltd. Semiconductor circuit components
US20070120103A1 (en) * 2001-10-10 2007-05-31 Burgener Mark L Switch circuit and method of switching radio frequency signals
KR20060038442A (ko) * 2003-07-10 2006-05-03 퀄컴 인코포레이티드 저전력 ｎ―ｆｅｔ 하이―사이드 스위치

Also Published As

Publication number Publication date
KR100980112B1 (ko) 2010-09-03
US8339180B2 (en) 2012-12-25
KR20090103043A (ko) 2009-10-01
WO2009119974A2 (ko) 2009-10-01
US20110210784A1 (en) 2011-09-01

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