WO2009116591A1 - Procédé de fabrication de guide d'ondes optique et pièce optique - Google Patents

Procédé de fabrication de guide d'ondes optique et pièce optique Download PDF

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Publication number
WO2009116591A1
WO2009116591A1 PCT/JP2009/055335 JP2009055335W WO2009116591A1 WO 2009116591 A1 WO2009116591 A1 WO 2009116591A1 JP 2009055335 W JP2009055335 W JP 2009055335W WO 2009116591 A1 WO2009116591 A1 WO 2009116591A1
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Prior art keywords
substrate
light
laser
optical waveguide
pulse
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PCT/JP2009/055335
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English (en)
Japanese (ja)
Inventor
誠人 熊取谷
高志 藤井
一之 平尾
清貴 三浦
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株式会社 村田製作所
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Priority to JP2010503909A priority Critical patent/JP4947212B2/ja
Publication of WO2009116591A1 publication Critical patent/WO2009116591A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/138—Integrated optical circuits characterised by the manufacturing method by using polymerisation

Definitions

  • the present invention relates to an optical waveguide manufacturing method and an optical component, and more particularly, an optical waveguide manufacturing method using an ultrashort pulse laser typified by a femtosecond laser, and an optical waveguide manufactured using the manufacturing method. It is related with the optical component which has.
  • an optical waveguide using a ferroelectric material made of a uniaxial crystal such as LiNbO 3 (hereinafter referred to as “LN”) or LiTaO 3 (hereinafter referred to as “LT”) has a refractive index changed by application of an electric field. Since the Pockels effect (electro-optic effect) is exerted, it is expected to be applied to a phase modulator, an optical switch, an isolator, and other various optoelectronic fields.
  • LN LiNbO 3
  • LT LiTaO 3
  • a Ti diffusion method is known as a method for manufacturing this type of optical waveguide.
  • a Ti thin film is formed on a ferroelectric substrate by using a thin film forming method such as a sputtering method or an electron beam evaporation method, and heat treatment is performed at a temperature of about 1000 ° C. to thermally diffuse the Ti thin film.
  • a Ti diffusion layer having a high refractive index is formed on the ferroelectric substrate, thereby producing an optical waveguide.
  • uniaxial crystals such as LN and LT
  • birefringence occurs when light is incident, and it is divided into ordinary rays and extraordinary rays.
  • the optical waveguide produced by the Ti diffusion method has the same refractive index for both ordinary and extraordinary rays. Can be increased to a degree, thereby confining light.
  • the waveguide must be patterned on the ferroelectric substrate using a photolithography technique or the like in addition to the thin film formation process and the thermal diffusion process described above, which complicates the manufacturing process.
  • it has a drawback that it takes a long time and the manufacturing cost is increased.
  • Non-Patent Document 1 a femtosecond laser is used, and laser light emitted from the femtosecond laser is condensed inside a substrate made of LN (hereinafter referred to as an “LN substrate”) to provide an optical waveguide. Attempts have been made to produce.
  • LN substrate a substrate made of LN
  • This femtosecond laser can output an ultrashort pulse laser beam having a pulse time width (hereinafter referred to as “pulse width”) of a femtosecond (10 ⁇ 15 s) level at a predetermined repetition rate.
  • pulse width a pulse time width of a femtosecond (10 ⁇ 15 s) level at a predetermined repetition rate.
  • Non-Patent Document 1 a Ti: sapphire crystal is used as the laser oscillator, a pulse energy is 0.2 ⁇ J, a repetition frequency is 1 kHz, and an objective lens having a magnification of 40 times and a numerical aperture of 0.65 is used.
  • the LN substrate is irradiated with laser light having a depth of 50 to 150 ⁇ m from the surface of the LN substrate and a pulse width of 220 fs (femtosecond) and 1.1 ps (picosecond).
  • the laser beam is damaged by heat from the laser beam condensing position.
  • a waveguide is not formed at the condensing position, but a distortion occurs around the condensing position, and this distortion increases the refractive index of the extraordinary ray (hereinafter referred to as “abnormal light refractive index”) ne. Yes. That is, the optical waveguide is formed so as to surround the damaged part.
  • Non-Patent Document 1 it is reported that the extraordinary refractive index ne increases as described above, but the refractive index of ordinary light (hereinafter referred to as “ordinary refractive index”) no has not changed. . That is, since the extraordinary refractive index ne increases, an optical waveguide of TM (Transverse Magnetic) light (p-polarized light) whose magnetic vector oscillation direction is perpendicular to the incident surface can be obtained, but the electrical vector oscillation direction is It has been reported that an optical waveguide of TE (Transverse) Electric) light (s-polarized light) perpendicular to the incident surface could not be obtained.
  • TM Transverse Magnetic
  • TE Transverse
  • Non-Patent Document 2 uses an ultrashort pulse fiber laser (fiber chirped pulse amplification laser), sets the repetition frequency to 100-1500 kHz, and focuses the laser light inside the LN substrate. Attempts have been made to fabricate optical waveguides.
  • ultrashort pulse fiber laser fiber chirped pulse amplification laser
  • the laser beam is irradiated onto the LN substrate at the above repetition frequency under the conditions of pulse energy of about 270 nJ and pulse width of about 600 fs.
  • the repetition frequency is 100 kHz
  • the condensing position is damaged and distortion due to stress occurs, but when the repetition frequency increases, the distortion gradually decreases, and at the repetition frequency of 700 kHz, the distortion is greatly reduced. It has been reported that distortion hardly occurs when the repetition frequency is 1000 kHz or more.
  • the ordinary light refractive index no increased and TE light waveguide was observed. This is because when the repetition frequency is increased to about 700 kHz, the generation interval of the ultrashort pulse is shortened, and as a result, the thermal relaxation time of the laser light is shortened and heat is accumulated, thereby increasing the ordinary light refractive index no. Seem.
  • Non-Patent Document 2 TM light waveguide was also observed, but this TM light is formed by optical waveguides different from TE light (for example, three optical waveguides arranged in the vertical direction in an LN substrate).
  • the upper stage and the lower stage are TE optical waveguides and the middle stage is TM optical waveguides), and it is pointed out that TM light has a very large propagation loss.
  • Non-Patent Document 1 the extraordinary refractive index ne increases even when the LN substrate is irradiated with an ultrashort pulse laser, but the ordinary refractive index no does not change, and therefore TM light is guided.
  • TM light is guided.
  • TE light is not guided and has polarization dependency.
  • Non-Patent Document 2 Although it has been confirmed that TE light and TM light are guided, it is not possible to guide both TE light and TM light through the same optical waveguide. That is, in the same optical waveguide, only one of TE light and TM light can be guided, and similarly to Non-Patent Document 1, there is a problem that it has polarization dependency. Moreover, Non-Patent Document 2 also has a problem that the propagation loss of TM light is very large.
  • the present invention has been made in view of such circumstances, and is capable of easily manufacturing an optical waveguide having no polarization dependency even when an ultrashort pulse laser beam is used. It is an object to provide a method and an optical component having an optical waveguide manufactured using this manufacturing method.
  • Non-Patent Document 1 by irradiating an ultrashort pulse laser beam, distortion occurs around the condensing position, thereby increasing the extraordinary light refractive index ne. That is, it is considered that the formation of strain inside the uniaxial crystal ferroelectric substrate causes an increase in the extraordinary refractive index ne.
  • Non-Patent Document 2 by increasing the repetition frequency and shortening the generation interval of ultrashort pulses, the thermal relaxation time of the laser light is shortened and heat is accumulated, thereby increasing the ordinary light refractive index no. is doing. That is, the accumulation of heat is considered to cause an increase in the ordinary refractive index no.
  • the present inventors pay attention to such points, use LT having a melting point higher than that of LN, irradiate the LT substrate with laser light at a predetermined repetition frequency at which heat is accumulated while remaining strain.
  • the cross-sectional shape of the optical waveguide is reduced by irradiating a laser beam with an ultrashort pulse with a pulse energy of 1.5 ⁇ J or more with a depth of 50 ⁇ m or less from the surface of the LT substrate. It was found that an optical waveguide which is good and can guide both TE light and TM light within the same waveguide can be obtained.
  • the present invention has been made on the basis of such knowledge, and the method of manufacturing an optical waveguide according to the present invention uses a depth within 50 ⁇ m from the surface of the LT substrate as a condensing position, and has an ultrashort pulse.
  • a laser beam having a pulse width and emitted at a predetermined repetition frequency is irradiated onto the substrate with a pulse energy of 1.5 ⁇ J or more, and the substrate is scanned with the laser beam, so that the refractive index is higher than that of the substrate.
  • a propagation part is formed at the condensing position.
  • ultra-short pulse means a pulse having a femtosecond level pulse width.
  • optical waveguide manufacturing method of the present invention is characterized in that the repetition frequency is 100 to 250 kHz.
  • the method for manufacturing an optical waveguide according to the present invention is characterized in that the condensing position has the predetermined depth of at least 20 ⁇ m or more.
  • the method for manufacturing an optical waveguide according to the present invention is characterized in that the ultrashort pulse has a pulse time width of 100 fs or less.
  • the method of manufacturing an optical waveguide according to the present invention is characterized in that the laser light emission source is a femtosecond laser.
  • the optical component according to the present invention is characterized by having an optical waveguide manufactured by using the above-described manufacturing method.
  • the depth within 50 ⁇ m from the surface of the LT substrate is the condensing position, the pulse width of the ultrashort pulse (preferably 100 fs or less), and a predetermined repetition frequency (
  • the substrate is irradiated with a laser beam emitted with a wave of 100 to 250 kHz with a pulse energy of 1.5 ⁇ J or more, and the substrate is scanned with the laser beam, so that a light propagation portion having a refractive index higher than that of the substrate.
  • the condensing position has the predetermined depth of at least 20 ⁇ m or more, the condensing position has an appropriate depth from the surface of the LT substrate, and the substrate surface causes ablation even when laser irradiation is performed. There is nothing.
  • the laser beam emission source is a femtosecond laser
  • the laser beam emission conditions can be easily adjusted, and without requiring a complicated manufacturing process such as the Ti diffusion method, A desired optical waveguide having no polarization dependency can be obtained at a low manufacturing cost.
  • the optical component of the present invention has an optical waveguide manufactured using the above-described manufacturing method, various desired optical components such as a phase modulator, an optical switch, and an isolator can be obtained inexpensively and easily. It becomes.
  • FIG. 1 It is a perspective view which shows one Embodiment of the optical component manufactured using the manufacturing method of the optical waveguide which concerns on this invention. It is a longitudinal cross-sectional view of FIG. It is the figure which showed typically the optical waveguide manufacturing apparatus used for the manufacturing method of the optical waveguide which concerns on this invention. It is a figure which shows an example of the pulse waveform output from a femtosecond laser. It is a figure which shows the other example of the pulse waveform output from a femtosecond laser. It is the figure which showed typically the cross-sectional shape of the optical waveguide used as the evaluation reference
  • FIG. 1 is a perspective view showing an embodiment of an optical component manufactured by using the optical waveguide manufacturing method according to the present invention
  • FIG. 2 is a longitudinal sectional view thereof.
  • the optical waveguide 3 having both the ordinary light refractive index no and the extraordinary light refractive index ne higher than those of the LT substrate 2 is formed inside the substrate (LT substrate) 2 made of LT crystal. .
  • the optical waveguide 3 is set to a position within 50 ⁇ m.
  • the LT substrate 2 is formed in parallel with the main surface 2a, and the cross-sectional shape is circular or elliptical so that TM light and TE light can propagate with high efficiency.
  • FIG. 3 is a schematic view schematically showing an embodiment of an optical waveguide manufacturing apparatus used for manufacturing the optical waveguide 3.
  • the optical waveguide manufacturing apparatus includes a femtosecond laser 4 as an ultrashort pulse laser, and an objective lens 6 that condenses the laser light 5 from the femto laser 4 at a condensing position F of the LT substrate 2. Yes.
  • the femtosecond laser 4 includes an ultrashort pulse oscillator 7 having a laser medium such as a Ti: sapphire crystal, and a pulse expander that temporarily extends the pulse width of the laser light obtained by the ultrashort pulse oscillator 7. 8, a pulse amplifier 9 for amplifying the pulse expanded by the pulse expander 8, a pump laser 10 for exciting the pulse amplifier 9, and pulse compression for compressing the pulse amplified by the pulse amplifier 9 into the ultrashort pulse
  • the container 11 is provided as a main part.
  • the ultrashort pulse oscillator 7 When laser light (for example, green light having a wavelength ⁇ of 532 nm) from an excitation source (not shown) is input to the ultrashort pulse oscillator 7, the ultrashort pulse oscillator 7 outputs a femtosecond level (for example, 100 fs). ) Is output. That is, in the ultrashort pulse oscillator 7, the phases are synchronized so that a plurality of longitudinal modes interfere with each other, the phases are continuously oscillated while the phases are locked, and the ultrashort pulse is operated by overlapping the phases. The laser beam is generated.
  • a femtosecond level for example, 100 fs.
  • the pulse width of the laser beam is temporarily expanded to a picosecond level (for example, 100 ps) by the pulse expander 8 to suppress the sharp peak output, and then the excitation laser (for example, green light having a wavelength ⁇ of 532 nm) is set.
  • the output energy is amplified by the pulse amplifier 9 excited through the above.
  • the pulse compressor 11 compresses the pulse width again to a femtosecond level (for example, 100 fs), and laser light having a high output energy and an ultrashort pulse width is emitted from the femtosecond laser.
  • the objective lens 6 is constituted by a condensing optical system that condenses the main surface 2a of the LT substrate 2 at a position where the depth d is within 50 ⁇ m.
  • the objective lens 6 has a magnification of 50 to 100 and a numerical aperture of 0.8 to 1.
  • a lens group designed for 40 can be used.
  • the depth d is set within 50 ⁇ m because when the depth d exceeds 50 ⁇ m, the cross-sectional shape of the optical waveguide 3 is indicated by the thickness direction of the LT substrate 2 (indicated by an arrow T in FIG. 3). This is because it becomes difficult to form the optical waveguide 3 having a desired cross-sectional shape. This is presumably because the influence of aberration occurs on the laser light passing through the LT substrate 2.
  • the upper limit of the depth d is not particularly limited, but is preferably 20 ⁇ m or more. That is, when the depth d is shallower than 20 ⁇ m, when the LT substrate 2 is irradiated with the laser beam 5, so-called “ablation” occurs, and the surface of the LT substrate 2 may be destroyed. Therefore, the depth d is preferably 20 ⁇ m or more.
  • the pulse energy of the ultrashort pulse emitted from the femtosecond laser 4 is set to 1.5 ⁇ J or more. The reason will be described below.
  • the pulse energy when the pulse energy is increased to 0.5 or more and less than 1.5 ⁇ J, a certain degree of distortion occurs at the condensing position F, and the extraordinary light refractive index ne can be increased.
  • the cross-sectional shape becomes elongated and it becomes difficult to form the optical waveguide 3 having a desired cross-sectional shape.
  • the pulse energy is low enough to accumulate heat, so that it is difficult to increase the ordinary light refractive index no even though the extraordinary light refractive index ne can be increased, and it has polarization dependence. It will be.
  • the pulse energy needs to be at least 1.5 ⁇ J or more.
  • a predetermined repetition frequency so that a desired distortion can be formed without damage to the condensing position F, and desired heat accumulation is performed.
  • a predetermined repetition frequency Preferably, it is set to 100 to 250 kHz.
  • t1 and t2 are pulses.
  • the widths (fs), f1, and f2 indicate the repetition frequency (kHz), and t1 ⁇ t2 and f1> f2.
  • Equation (1) the output energy P (energy per second) is expressed by Equation (1).
  • the pulse energy E is relatively small in the range of at least 1.5 ⁇ J, and the laser intensity I is also small as shown in FIG. Will also be moderate.
  • the LT substrate 2 is used instead of the LN substrate described in Non-Patent Documents 1 and 2, so that even if the repetition frequency is 100 kHz, damage due to heat is eliminated. Thus, only distortion can be formed, and the extraordinary light refractive index ne can be increased.
  • the melting point of the LN substrate is 1180 ° C.
  • the melting point of the LT substrate 2 is as high as 1650 ° C.
  • the melting point is as low as 1180 ° C., it is considered that when irradiated with laser light having a sharp and high output intensity I, it is more easily damaged by heat than the LT substrate.
  • the LT substrate 2 has a higher melting point and superior heat resistance than the LN substrate, and is not easily damaged by the heat of laser irradiation. That is, even if the repetition frequency is 100 kHz, unlike the LN substrate, it is considered that only distortion can be formed without being damaged by heat.
  • the pulse generation interval becomes longer, so that the heat relaxation time is shortened. As a result, heat is easily accumulated, and the ordinary light refractive index no can be increased. It becomes.
  • both the ordinary light refractive index no and the extraordinary light refractive index ne can be increased, and the polarization-independent optical waveguide 3 having no polarization dependence can be formed.
  • the upper limit of the repetition frequency f is not particularly limited, but is practically 250 kHz or less.
  • the pulse width t of the ultrashort pulse is not particularly limited as long as it is a femtosecond level, but is preferably 100 fs or less in order to irradiate the condensing position F with laser light with a desired sharp pulse.
  • an ultrashort pulse laser beam having a pulse energy of 1.5 ⁇ J or more is applied to the LT substrate 2 with a predetermined repetition frequency (preferably 100 to 250 kHz), and the LT substrate By scanning 2, an optical waveguide 3 capable of guiding both TE light and TM light can be formed.
  • the depth within 50 ⁇ m from the surface of the LT substrate 2 is defined as the condensing position F, the pulse width of the ultrashort pulse (preferably 100 fs or less), and a predetermined repetition frequency (
  • the substrate is irradiated with a laser beam emitted with a wave of 100 to 250 kHz with a pulse energy of 1.5 ⁇ J or more, and the substrate is scanned with the laser beam, so that a light propagation portion having a refractive index higher than that of the substrate.
  • an optical waveguide 3 having a good cross-sectional shape and capable of guiding both TE light and TM light can be obtained, thereby producing an optical waveguide 3 having no polarization dependency.
  • the optical waveguide 3 suitable for various optical components that can rotate and switch the polarization plane can be obtained.
  • the condensing position F has the predetermined depth of at least 20 ⁇ m or more, the condensing position F has an appropriate depth from the main surface 2a of the LT substrate 2, and even if laser irradiation is performed, the LT The surface of the substrate 2 does not ablate.
  • the emission source of the laser beam 5 is a femtosecond laser, it is possible to easily control the emission condition of the laser beam, and in a short time without requiring a complicated manufacturing process such as the Ti diffusion method. A desired optical waveguide can be obtained at a low manufacturing cost.
  • the present invention is not limited to the above embodiment.
  • a femtosecond laser using a Ti: sapphire crystal as a laser medium is used as the ultrashort pulse laser.
  • any laser capable of emitting an ultrashort pulse laser beam may be used.
  • a fiber laser can also be used.
  • the optical system is adjusted so that the condensing position is 20 ⁇ m, 50 ⁇ m, and 100 ⁇ m from the substrate surface, and the z-cut LT substrate is irradiated with laser light to obtain sample numbers 1 to Eighteen samples were prepared.
  • a Ti sapphire mode-locked laser regenerated and compressed with Coherent RegA9000 was used as a femtosecond laser.
  • the laser light irradiation conditions and the objective lens specifications are as follows.
  • Pulse width 82fs Repeat frequency: 100 kHz or 250 kHz
  • Pulse energy 0.5 ⁇ J, 1.0 ⁇ J, 1.5 ⁇ J, or 2.0 ⁇ J
  • Scanning speed 100 ⁇ m / s
  • the cross section of each sample of sample numbers 1 to 18 was polished, and the cross-sectional shape was observed with a polarizing microscope.
  • FIG. 6 is a diagram schematically showing the cross-sectional shape.
  • the optical waveguide is sufficiently formed from a sample whose cross-sectional shape is symmetric or substantially symmetric and whose ratio a / b between the major axis a and the minor axis b is less than 1/1 to 3/1.
  • a sample having an asymmetrical shape with a clear cross-sectional shape and a ratio a / b of 3/1 or more is marked with a ⁇ mark because the optical waveguide is temporarily formed although it is insufficient.
  • a sample in which formation of a waveguide was not recognized at all was marked with x, and the cross-sectional shape was evaluated.
  • the sample was irradiated with laser light, the state was imaged, and polarization independence was evaluated.
  • FIG. 7 is an apparatus diagram schematically showing an apparatus for confirming polarization independence.
  • a half-wave plate 14 for controlling the polarization direction and an objective lens 15 are disposed in an optical path 12 on the laser irradiation side, and a CCD camera 17 is disposed in an optical path 16 facing the laser irradiation side through a sample 13.
  • an objective lens 18 is disposed. Then, the half-wave plate 14 is set to the first position and irradiated with laser light to check the waveguide state of the TM light, and then the half-wave plate 14 is rotated by 90 ° from the first position to obtain the second The position was set, and the waveguide state of TE light was confirmed.
  • a red He—Ne laser having a wavelength of 633 nm is transmitted through the half-wave plate 14 set at the first position, and then condensed by the objective lens 15 at the position where the optical waveguide is formed in the sample 13.
  • the state was imaged with the CCD camera 17, and it was investigated whether TM light waveguide was confirmed.
  • the half-wave plate 14 is rotated by 90 ° from the first position to be set at the second position, and the He—Ne laser is condensed at the waveguide forming position in the sample 13 by the same method as described above.
  • the state was imaged with the CCD camera 17, and it was investigated whether the TE light guide was confirmed.
  • Table 1 shows the evaluation results of repetition frequency, pulse energy, condensing position, cross-sectional shape, and polarization independence at the time of manufacturing the optical waveguide.
  • Samples 1 to 12 are samples in which the repetition frequency is set to 250 kHz and the LT substrate is irradiated with laser light.
  • Sample Nos. 1 to 3 had a pulse energy of 0.5 ⁇ J, which was too small, so no optical waveguide was formed, and no waveguide was confirmed.
  • Sample Nos. 4 to 6 have a pulse energy of 1.0 ⁇ J, and the LT substrate is irradiated with laser light with a pulse energy larger than that of Sample Nos. 1 to 3, but it is still insufficient to form a desired optical waveguide.
  • Sample numbers 9 and 12 show the case where the pulse energy is 1.5 ⁇ J and 2.0 ⁇ J, respectively, and the light collecting position is 100 ⁇ m.
  • the pulse energy is 1.5 ⁇ J or more and has sufficient pulse energy, both the ordinary light refractive index no and the extraordinary light refractive index ne increase, and the TM light and the TE light are guided. It was confirmed and it was confirmed that it has polarization independence.
  • the condensing position is as deep as 100 ⁇ m, so that the ratio a / b is 3/1, the cross-sectional shape becomes excessively long and the desired cross-sectional shape cannot be obtained.
  • Sample Nos. 7, 8, 10 and 11 have a pulse energy of 1.5 ⁇ J or more and a light condensing position of 20 ⁇ m and 50 ⁇ m, so that the cross-sectional shape is a desired shape and the polarization independent optical waveguide. It was confirmed that
  • Sample numbers 13 to 18 are samples in which the repetition frequency is set to 100 kHz and the LT substrate is irradiated with laser light.
  • Sample Nos. 13, 14, 16 and 17 have a desired cross-sectional shape and a polarization-independent optical light because the pulse energy is 1.5 ⁇ J or more and the focusing positions are 20 ⁇ m and 50 ⁇ m. It was confirmed that a waveguide was obtained.
  • FIG. 8 is a CCD image of sample number 11 when the half-wave plate 14 is set to the first position and the waveguide is confirmed
  • FIG. 9 is a half-wave plate 14 set to the second position. It is a CCD image of the same sample at the time of confirming waveguide.
  • the white portion is the portion where the light is guided.
  • FIG. 10 is a CCD image of sample number 5 when the half-wave plate 14 is set to the first position and the waveguide is confirmed
  • FIG. 11 is a half-wave plate 14 set to the second position. It is a CCD image of the same sample when the wave is confirmed.
  • the white portion is the portion where the light is guided.

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  • Engineering & Computer Science (AREA)
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Abstract

L'invention porte sur un faisceau laser ayant une largeur d'impulsion ultra-courte (de préférence, non supérieure à 100 fs) et émis avec une fréquence de répétition prédéterminée (de préférence, de 100 à 250 kHz), qui est appliqué avec une énergie d'impulsion d'au moins 1,5 µJ sur un substrat (un substrat LT) (2) formé de LiTiO3, de façon telle que la position de focalisation F se situe au niveau d'une profondeur qui n'est pas supérieure à 50 µm de la surface du substrat LT (2). Le faisceau laser est utilisé pour balayer le substrat et pour former une unité de propagation de lumière ayant un indice de réfraction supérieur au substrat sur la position de focalisation. De plus, un second laser femto est utilisé en tant que source d'émission laser. Ainsi, même lorsqu'un faisceau laser d'impulsion ultra-courte est utilisé, il est possible de fabriquer aisément un guide d'ondes optique n'ayant pas de dépendance de polarisation.
PCT/JP2009/055335 2008-03-19 2009-03-18 Procédé de fabrication de guide d'ondes optique et pièce optique WO2009116591A1 (fr)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003215377A (ja) * 2002-01-21 2003-07-30 Hitachi Cable Ltd 導波路の製造方法
JP2003215375A (ja) * 2002-01-21 2003-07-30 Hitachi Cable Ltd 屈折率制御型レーザ描画導波路の製造方法
JP2004341125A (ja) * 2003-05-14 2004-12-02 Fujikura Ltd 光導波路部品の加工方法、グレーティングの製造方法、光導波路部品
JP2007293215A (ja) * 2006-04-27 2007-11-08 Fujitsu Ltd 光デバイス

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003215377A (ja) * 2002-01-21 2003-07-30 Hitachi Cable Ltd 導波路の製造方法
JP2003215375A (ja) * 2002-01-21 2003-07-30 Hitachi Cable Ltd 屈折率制御型レーザ描画導波路の製造方法
JP2004341125A (ja) * 2003-05-14 2004-12-02 Fujikura Ltd 光導波路部品の加工方法、グレーティングの製造方法、光導波路部品
JP2007293215A (ja) * 2006-04-27 2007-11-08 Fujitsu Ltd 光デバイス

Non-Patent Citations (3)

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Title
BEN MCMILLEN ET AL.: "Waveguiding and nonlinear optical properties of three-dimensional waveguides in LiTa03 written by high-repetition rate ultrafast laser", APPLIED PHYSICS LETTERS, vol. 93, no. 11, 15 September 2008 (2008-09-15), pages 111106 *
MAKOTO KUMATORIYA ET AL.: "Femto-byo-laser ni yoru LiTao3 Kibanjo no Doharo Keisei to Hyoka", DAI 55 KAI EXTENDED ABSTRACTS, JAPAN SOCIETY OF APPLIED PHYSICS AND RELATED SOCIETIES, no. 3, 27 March 2008 (2008-03-27), pages 1218 *
MIKIO NAKABAYASHI ET AL.: "Femto-byo-laser ni yoru LiTao3 Kibanjo eno Doharo Keisei", THE CERAMIC SOCIETY OF JAPAN NENKAI KOEN YOKOSHU, 20 March 2008 (2008-03-20), pages 104 *

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