WO2009115063A1 - Agencement de lampe et procédés d'émission de lumière - Google Patents

Agencement de lampe et procédés d'émission de lumière Download PDF

Info

Publication number
WO2009115063A1
WO2009115063A1 PCT/DE2008/000472 DE2008000472W WO2009115063A1 WO 2009115063 A1 WO2009115063 A1 WO 2009115063A1 DE 2008000472 W DE2008000472 W DE 2008000472W WO 2009115063 A1 WO2009115063 A1 WO 2009115063A1
Authority
WO
WIPO (PCT)
Prior art keywords
carrier element
arrangement
arrangement according
semiconductor
housing part
Prior art date
Application number
PCT/DE2008/000472
Other languages
German (de)
English (en)
Inventor
Raimund Oberschmid
Original Assignee
Osram Gesellschaft mit beschränkter Haftung
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Gesellschaft mit beschränkter Haftung filed Critical Osram Gesellschaft mit beschränkter Haftung
Priority to PCT/DE2008/000472 priority Critical patent/WO2009115063A1/fr
Publication of WO2009115063A1 publication Critical patent/WO2009115063A1/fr

Links

Classifications

    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V19/00Fastening of light sources or lamp holders
    • F21V19/001Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
    • F21V19/003Fastening of light source holders, e.g. of circuit boards or substrates holding light sources
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21KNON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20Light sources comprising attachment means
    • F21K9/23Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/232Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50Cooling arrangements
    • F21V29/70Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50Cooling arrangements
    • F21V29/70Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
    • F21V29/74Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21YINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2107/00Light sources with three-dimensionally disposed light-generating elements
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21YINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00Light-generating elements of semiconductor light sources
    • F21Y2115/10Light-emitting diodes [LED]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S362/00Illumination
    • Y10S362/80Light emitting diode

Definitions

  • the invention relates to an arrangement for emitting light or a method for removing heat from light-emitting semiconductor components.
  • atmospheric chandeliers in the form of, for example, crystal chandeliers, also referred to as chandeliers, are used as means of illumination with incandescent lamps in the shape of a candle.
  • incandescent lamps in the shape of a candle.
  • particularly clear incandescent lamps are used, since especially their filaments have a high light output concentrated at a certain point or a certain line, which lead to the desired atmospheric color refractions on the specially cut crystal hangings.
  • the electro-optical efficiency of a lighting device is worse than, for example, when using light-emitting semiconductor components.
  • lights or lamp assemblies with more than one bulb is usually one, in relation to the luminous efficacy, high electrical energy needed to operate.
  • the electro-optical efficiency is about 5%, with the remaining electrical energy being largely converted into thermal energy.
  • incandescent lamps are increasingly being replaced by light-emitting diodes (LEDs).
  • LEDs light-emitting diodes
  • the active area in which the emitted light is produced is generally lower in the case of LEDs than in the case of incandescent lamps, it is precisely the use of LEDs which increasingly requires care for sufficient heat dissipation. Since the lighting equipment used in the living area should meet certain aesthetic requirements, this heat dissipation should be as inconspicuous and inconspicuous as possible.
  • an arrangement for emitting light comprising a support member and at least one semiconductor device emitting the light.
  • the semiconductor component is arranged on the carrier element and has a sleeve-shaped housing lower part open to two opposite sides.
  • the support member is mechanically connected to the lower housing part, heat-conducting and at least partially enveloped by the lower housing part, without the open sides of the housing lower part are thereby closed.
  • a lamp device which has at least one mechanical arm and an electrical socket.
  • the electrical socket is arranged on the mechanical arm.
  • An arrangement for emitting Light wherein the housing lower part with the electrical socket is mechanically detachable and electrically connected, so that the arrangement for emitting light via the electrical socket is operable, is additionally provided.
  • the carrier element and the lower housing part are formed such that a chimney effect occurs in the interior of the arrangement, which removes the heat generated in the interior of the arrangement outside of the arrangement.
  • a housing lower part as a sleeve and opening the sleeve on two opposite sides
  • the measures described in the independent claims creates a so-called chimney effect within the arrangement.
  • the chimney effect is a physical effect caused by a heat source that creates an upward flow of air.
  • the actual chimney effect is based on heat flow. If the semiconductor device is in operation, it will emit a high amount of energy in the infrared part of the electromagnetic spectrum. This is also called thermal radiation or radiating thermal energy. This thermal energy heats the air surrounding the semiconductor device. Characterized in that the carrier element, on which the semiconductor component is arranged, is heat-conducting and at least partially in a sleeve sen-shaped housing lower part, this heated air according to the laws of thermals, also called convection, through the upper of the open sides of the housing base rise upwards.
  • a plurality of semiconductor devices are arranged on the carrier element.
  • a mixed light is produced which resembles a candle or an incandescent lamp.
  • the semiconductor devices are placed on cantilevers of the carrier element, an improved light emission of the device is produced.
  • the chimney effect additionally generates more cooling of the support element due to the larger surface area.
  • a first terminal of the semiconductor component is preferably connected to the heat sink in an electrically conductive manner.
  • SMT-based semiconductor devices on the chip side on a first, usually large-area connection, which is soldered or clamped to the support member.
  • the carrier element thereby forms a common reference point of all semiconductor components and is electrically conductive.
  • a second terminal is isolated from the first terminal on an electrically isolated from the carrier element metal conductor of the support element out. Preference is given to a series circuit of semiconductor components which are located on a cantilever, wherein the series-connected semiconductor components of each cantilever are connected in parallel.
  • the semiconductor components are applied to one another on one side and / or on the second side by means of conductor structures on the carrier element and contact the semiconductor components electrically.
  • the contacting of the individual semiconductor components takes place here more flexible.
  • a contact foil with which the semiconductor components can be electrically contacted by means of bonding or soldering is used.
  • the chimney effect can be enhanced by applying a sleeve-shaped upper housing part to the lower housing part.
  • the upper housing part also has two open, opposite sides. This upper housing part is at least partially transparent to the light emitted by the at least one semiconductor component and at least partially surrounds the carrier element.
  • the upper part of the housing can be clear, frosted or pearlized.
  • the lower housing part is socket-like and releasably mechanically connectable by means of screw connection, bayonet connection with a tailor-made counterpart.
  • a tailor-made counterpart for example, conceivable here would be the Edison sockets, such as E14 or E17. Through this Edison socket in addition to the mechanical screw connection also generates an electrical connection for operating the semiconductor device.
  • Other possible socket types are sockets and bayonet sockets.
  • the semiconductor device is a white light LED or a blue light based LED. These LEDs may further include wavelength conversion means that convert a primary wavelength to a secondary wavelength. It is also advantageous if the carrier element has cooling ribs, whereby in addition a higher surface of the carrier element is generated and more heat is released from the carrier element to the environment by the generated air flow of the chimney effect.
  • bores are incorporated into the carrier element and / or heat-transporting pipes, so-called heatpipes provided.
  • These heatpipes can be soldered, glued or otherwise heat conductively connected to the support element.
  • These heat pipes are closed in one embodiment and filled with a cooling liquid.
  • These heatpipes can continue to be designed annular, whereby an improved heat dissipation is achieved.
  • FIG. 1 shows a first embodiment of an arrangement according to the invention for emitting light
  • FIG. 3 shows a development of the embodiment shown in Figure 1
  • FIG. 4 shows an alternative exemplary embodiment of an arrangement for emitting light with the usual screw base
  • FIG. 5 shows in A to D exemplary embodiments of an at least partially transparent housing upper part
  • FIG. 6 shows in A to E exemplary embodiments for electrically contacting the semiconductor components on the carrier element
  • FIG. 7A enlarged detailed representation for contacting a semiconductor component on the carrier element
  • FIG. 7B shows a further enlarged view for contacting a semiconductor component on the carrier element
  • FIG. 10 Exemplary embodiment for the electronic supply of the semiconductor components from FIG. 5
  • FIG. 11 shows an alternative exemplary embodiment for the electronic supply of the semiconductor components of FIGS. 9 and 10.
  • FIG. 1 shows a first exemplary embodiment of the invention.
  • five semiconductor devices 2 are arranged on a carrier element 1.
  • the carrier element 1 which is heat-conducting, is connected via the mechanical connection 4 with a nem housing bottom part 3 connected.
  • the lower housing part 3 is designed sleeve-shaped.
  • As a sleeve a hollow body is understood, which is open on at least two opposite sides.
  • the semiconductor devices 2 are driven via electrical contacts and thereby operated. In operation, the semiconductor devices 2 will emit light of a certain wavelength range of the electromagnetic spectrum.
  • thermal energy is radiated from the semiconductor devices 2 in the infrared region of the EM spectrum.
  • the heat-conducting carrier element 1 is heated by the operation of the semiconductor devices 2. Due to the partial placement of the support element 1 in the lower housing part 3 creates a heat source in the sleeve-shaped housing bottom 3. By the chimney effect described above, the warm air will rise up and escape through the first open side 31 of the housing base. Due to the resulting negative pressure in the interior of the lower housing part 3 cold air is drawn from the environment through the second open side 32 of the lower housing part in the lower housing part 3. There is a continuous flow of cold air through the first side 31 and warm or hot air from the second side 32. By the colder air of the environment, the support member 1 is cooled.
  • an upper housing part 7 on the lower housing part 3 which further enhances the chimney effect.
  • the flowing out of the first side 71 of the upper housing part warm air is replaced by cold, flowing over the first side 31 of the lower housing part 3 colder air and cools the support element.
  • the first side 31 of the housing base is still open at least partially.
  • the electro-optical efficiency of LED is very temperature dependent. Slope coefficients for red LEDs are assumed to be -0.6% / K and -0.4% / K for blue LEDs. When using blue LED with conversion substances, the slope coefficient deteriorates slightly. The efficiency of an LED is therefore 1.4 times higher at 25 degrees Celsius than at 75 degrees Celsius. It is therefore desirable to ensure that the temperature within the assembly does not rise above a certain level.
  • the semiconductor device 2 is not too bright to choose.
  • the thermal energy generated is better distributed on the heat sink or the support element and improves drainable. This also results in a greater design freedom of the arrangement in order to arrive at a more aesthetic overall picture of the arrangement and to obtain a more authentic candle reproduction.
  • the color play of an incandescent lamp is easier to reproduce than with only a few very strong LEDs.
  • the heat transfer resistance to the heat exchanger metal must be 3.6 K / W * 16 LED, which in turn corresponds to 57 K / W.
  • FIGS. 9 to 11 This calculation example is by no means restrictive of the inventive idea, theoretically an incandescent lamp of very different wattage can also be emulated with only one high-power LED.
  • the semiconductor components used in FIGS. 1 to 3 are, for example, LEDs. These LEDs are preferably lamp radiators, which generate as many refractions and additional light effects in a crystal chandelier arrangement with ground crystals. As Lamberstrahler here a physically ideal radiator is called, which is constant in all directions.
  • the power supply has, for example, a thread of M8.
  • the upper housing part has a diameter of 25 to 35 millimeters. Nine white light LEDs are used.
  • the cooling vanes of the support element 1 are bevelled by 45 degrees, which can also be emitted through the lower housing part 3 light.
  • the lower housing part is an aluminum die-cast part and silver anodized or painted white. By molding a typical candle shape is obtained.
  • FIG. 4 shows an alternative embodiment of the arrangement for emitting light.
  • the Carrier element 1 more boom 5. On these arms
  • the semiconductor devices 2 are arranged.
  • the lower housing part 3 is designed with a screw base 6.
  • the Edison socket from the E series can be used in particular.
  • Other conceivable sockets are plug or Baj onettsockel.
  • the electrical contacting of the respective semiconductor components 2 is achieved.
  • a simplified wiring of all semiconductor devices 2 is achieved by parallel connection, an embodiment of which is shown in Figure 9.
  • a series circuit of the semiconductor devices 2 is made, and these individual arms 5 are in turn connected in parallel.
  • the current flow per arm is constant, which leads to a constant light output per boom 5. Any fluctuations in the forward voltage is compensated.
  • the upper housing part 7 is shown. Form and design are no limits, only the chimney effect should be reinforced by the shape of the upper housing part 7.
  • the upper housing part 7 and the lower housing part 3 should have an identical average on the adjacent sides 32 and 72.
  • the upper housing part 7 is preferably made of glass. The texture of the glass can be clear, frosted or pearlized be. Furthermore, it is conceivable that a plastic is used.
  • FIGS. 6a to 6e arrangements and interconnections of the semiconductor components 2 on the respective arm 5 are shown.
  • the electrical supply of these semiconductor components 2 is illustrated in FIGS. 9 to 11.
  • the arms 5 of the carrier element 1 can have a contact foil or at least partially be formed as a printed circuit board.
  • the boom 5 has conductor structures 8 with which the individual semiconductor components 2 are connected in series.
  • the terminals for operating the semiconductor components 2 are arranged at the top and bottom of the boom 5.
  • FIG. 6b shows a side view of the arm 5 shown in FIG. 6a.
  • FIG. 6c shows an alternative embodiment of the cantilever shown in FIG. 6a.
  • the boom 5 has at least one plated-through hole, as a result of which the return conductor is led to the lower end of the boom 5 on the rear side of the arm 5, as shown in FIG. 6d.
  • an aesthetic flame simulation is provided.
  • the arrangements and interconnections of the individual semiconductor components 2 according to FIG. 6 serve only as an example. Other arrangements and interconnections are also conceivable.
  • FIGS. 7a and 7b A more detailed illustration of the placement of an LED semiconductor device 2 on the cantilever 5 is shown in FIGS. 7a and 7b.
  • the semiconductor device 2 is connected to the conductor structures 8.
  • the placement on the boom 5 can be performed by means of adhesive 11 or a solder joint.
  • a Capping material or potting compound 12 to protect the bond and the semiconductor device 2 may be provided. This potting compound 12 is transparent to the emitted light.
  • FIG. 7b A contacting possibility is shown in FIG. 7b.
  • two conductor structures 8 are shown and connected by means of Drahtbonditati with the respective semiconductor terminals. If a contact sheet is used, it should dissipate enough heat and be very thin. It can be laminated on one or two sides.
  • FIGS. 6 and 7 can be adapted to the respective design of the carrier element 1 and its arms 5.
  • the semiconductor components are not limited in shape or type. Both hole-through devices and SMT devices can be used.
  • a semiconductor chip it is also conceivable for a semiconductor chip to be arranged instead of a potted semiconductor component 2.
  • FIGS. 8a to 8f Exemplary embodiments of the carrier element 1 are shown in FIGS. 8a to 8f.
  • Each carrier element 1 in this case has a plurality of arms 5.
  • semiconductor devices 2 are connected in series and interconnected via conductor structures 8 with each other in series.
  • Embodiments for the electrical control of the semiconductor components is shown in FIGS. 9 to 11. It can be seen that the conductor structures 8 connect the semiconductor components 2 on the carrier element 1 in parallel connection per arm. If the carrier element 1 has a reflective design, then a higher light output of the arrangement is achieved.
  • the outriggers should be heat conductive, resulting in an improved Heat dissipation is possible.
  • the associated plan views show that the cantilevers can be fitted on one side or on both sides.
  • the shape may be conical or straight or angled or rounded.
  • the inner layer can be designed perlierend.
  • the carrier element is a heat sink and shaped as a heat sink.
  • additional cooling fins are provided.
  • the semiconductor components may in this case be arranged on two sides on the arms 5, as shown in FIGS. 8c and 8d, or on one side on the arm 5, as shown in FIGS. 8e and 8f.
  • FIGS. 9A to D show exemplary embodiments of the electronic control of the semiconductor components 2.
  • a rectifying unit 13 is provided in each of FIGS. Input is to this unit 13, an AC voltage, in particular the mains voltage of 230V, applied.
  • Other types of voltage, voltage levels and frequencies are also conceivable.
  • the individual semiconductor components 2 are connected in series with a respective series resistor 14.
  • the individual semiconductor component strands are connected in parallel.
  • the series resistor 14 serves primarily to compensate for differences in the flux voltage of the individual semiconductor components 2.
  • a single resistor for limiting the current in series with the entire parallel circuit is likewise conceivable insofar as no differences in the flux voltage are to be compensated. The following applies:
  • Series resistor 14 (flux voltage difference / current of the individual parallel paths) - single resistor
  • FIG. 9B shows a series connection of the semiconductor components 2.
  • the rectifying unit 13 as a low-loss power capacitor Sperrschwingerscigen build.
  • Figure 9C A combination of series and parallel connection is shown in Figure 9C.
  • the semiconductor components 2 of a cantilever 5 of the carrier element 1 are connected in series and all the cantilevers 5 are connected in parallel.
  • FIG. 9D shows two series circuits, each having separate currents I1 and I2. This is especially useful if the color temperature should be set individually per series connection.
  • FIG. 10 shows an electrical drive for semiconductor components 2 of FIG. 5.
  • a current-limiting coil Ll is provided and serves partly as reactive power compensation.
  • the coil Ll is connected in series with a capacitor Cl.
  • the capacitor Cl is connected in series with three antiparallel-connected semiconductor devices 2.
  • the two rear series-connected antiparallel semiconductor devices 2 are arranged parallel to a series circuit consisting of capacitor C2 switch Sl and coil L2.
  • the semiconductor components 2 and the conductor structures 8 are preferably electrically insulated. By placing the upper housing part 7 additional contact contactor is given. By the switch S2, the two antiparallel connected diodes are bridged. This is an optional color change.
  • the capacitor Cl is used as a current limiting resistor.
  • FIG. 11 shows an alternative exemplary embodiment of the electrical actuation of the semiconductor components 2 of FIGS. 9 and 10.
  • a coil L3 is preferably removed. tunable. This, in turn, a color design is possible.
  • the lower housing part 3 is for example a demountable, kerzenschaftiges metal tube. Any cooling fins or the support element 1 itself is heat-tight to connect to the lower housing part 3.
  • this arrangement is used in a lighting device.
  • an electrical socket is provided, in which the arrangement is introduced, for example, by means of Edison socket housing lower part 3.
  • a so-called chandelier with a variety of mechanical arms and described arrangements is conceivable.
  • crystal pendants are provided on the chandelier.

Abstract

L'invention porte sur un agencement pour émettre de la lumière, comportant un élément support (1), au moins un composant semi-conducteur (2) émettant de la lumière, l'élément semi-conducteur (2) étant disposé sur l'élément support (1), et un socle de boîtier (3), en forme de douille, ouvert vers deux côtés opposés (31, 32).
PCT/DE2008/000472 2008-03-17 2008-03-17 Agencement de lampe et procédés d'émission de lumière WO2009115063A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/DE2008/000472 WO2009115063A1 (fr) 2008-03-17 2008-03-17 Agencement de lampe et procédés d'émission de lumière

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/DE2008/000472 WO2009115063A1 (fr) 2008-03-17 2008-03-17 Agencement de lampe et procédés d'émission de lumière

Publications (1)

Publication Number Publication Date
WO2009115063A1 true WO2009115063A1 (fr) 2009-09-24

Family

ID=39865167

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2008/000472 WO2009115063A1 (fr) 2008-03-17 2008-03-17 Agencement de lampe et procédés d'émission de lumière

Country Status (1)

Country Link
WO (1) WO2009115063A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2314913A1 (fr) 2009-10-21 2011-04-27 Tyco Electronics Nederland B.V. Support d'unité d'émission lumineuse et source lumineuse comportant ce support
EP2354629A1 (fr) * 2010-01-29 2011-08-10 Chiu-Min Lin Lampe à DEL pour éclairage de large zone
GB2483942A (en) * 2010-12-03 2012-03-28 Zeta Controls Ltd Electric lamp
DE102011007221A1 (de) * 2011-04-12 2012-10-18 Osram Ag Leuchtvorrichtung
EP2542826A1 (fr) * 2010-03-03 2013-01-09 Koninklijke Philips Electronics N.V. Lampe électrique comprenant un réflecteur pour le transfert de chaleur depuis une source lumineuse

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030039119A1 (en) * 2001-08-24 2003-02-27 Densen Cao Semiconductor light source for providing visible light to illuminate a physical space
DE20312760U1 (de) * 2003-08-19 2003-10-16 Moeller Gerd Kühlrohr für Leuchtdiodenleuchten
US20050111234A1 (en) * 2003-11-26 2005-05-26 Lumileds Lighting U.S., Llc LED lamp heat sink
CN1948819A (zh) * 2006-10-26 2007-04-18 诸建平 Led节能灯
US20070230188A1 (en) * 2006-03-30 2007-10-04 Yi Min Lin Light-emitting diode light
US20070253202A1 (en) * 2006-04-28 2007-11-01 Chaun-Choung Technology Corp. LED lamp and heat-dissipating structure thereof
US20070279862A1 (en) * 2006-06-06 2007-12-06 Jia-Hao Li Heat-Dissipating Structure For Lamp

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030039119A1 (en) * 2001-08-24 2003-02-27 Densen Cao Semiconductor light source for providing visible light to illuminate a physical space
DE20312760U1 (de) * 2003-08-19 2003-10-16 Moeller Gerd Kühlrohr für Leuchtdiodenleuchten
US20050111234A1 (en) * 2003-11-26 2005-05-26 Lumileds Lighting U.S., Llc LED lamp heat sink
US20070230188A1 (en) * 2006-03-30 2007-10-04 Yi Min Lin Light-emitting diode light
US20070253202A1 (en) * 2006-04-28 2007-11-01 Chaun-Choung Technology Corp. LED lamp and heat-dissipating structure thereof
US20070279862A1 (en) * 2006-06-06 2007-12-06 Jia-Hao Li Heat-Dissipating Structure For Lamp
CN1948819A (zh) * 2006-10-26 2007-04-18 诸建平 Led节能灯
WO2008049323A1 (fr) * 2006-10-26 2008-05-02 Jianping Zhu Lampe à diode électroluminescente à économie d'énergie

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2314913A1 (fr) 2009-10-21 2011-04-27 Tyco Electronics Nederland B.V. Support d'unité d'émission lumineuse et source lumineuse comportant ce support
WO2011048092A1 (fr) * 2009-10-21 2011-04-28 Tyco Electronics Nederland Bv Support d'unité électroluminescente et source lumineuse comprenant ce support
EP2354629A1 (fr) * 2010-01-29 2011-08-10 Chiu-Min Lin Lampe à DEL pour éclairage de large zone
EP2542826A1 (fr) * 2010-03-03 2013-01-09 Koninklijke Philips Electronics N.V. Lampe électrique comprenant un réflecteur pour le transfert de chaleur depuis une source lumineuse
KR20130018747A (ko) * 2010-03-03 2013-02-25 필립스 루미리즈 라이팅 캄파니 엘엘씨 광원으로부터의 열을 전달하기 위한 반사기를 갖는 전기 램프
US9383081B2 (en) 2010-03-03 2016-07-05 Koninklijke Philips N.V. Electric lamp having reflector for transferring heat from light source
EP2542826B1 (fr) * 2010-03-03 2018-10-24 Philips Lighting Holding B.V. Lampe électrique comprenant un réflecteur pour le transfert de chaleur depuis une source lumineuse
KR102071338B1 (ko) 2010-03-03 2020-01-30 시그니파이 홀딩 비.브이. 광원으로부터의 열을 전달하기 위한 반사기를 갖는 전기 램프
GB2483942A (en) * 2010-12-03 2012-03-28 Zeta Controls Ltd Electric lamp
DE102011007221A1 (de) * 2011-04-12 2012-10-18 Osram Ag Leuchtvorrichtung
DE102011007221B4 (de) 2011-04-12 2022-05-19 Ledvance Gmbh Leuchtvorrichtung

Similar Documents

Publication Publication Date Title
DE202007008258U1 (de) LED-Leuchtmittel
DE102010008876B4 (de) Lichtquelle mit Array-LEDs zum direkten Betrieb am Wechselspannungsnetz und Herstellungsverfahren hierfür
EP2183794B1 (fr) Boîtier de del
DE69936375T2 (de) Led-leuchte
EP2198196B1 (fr) Lampe
DE102012002859A1 (de) Beleuchtungsquelle mit veringerter Innenkerngröße
EP2188566A1 (fr) Lampe à del
DE102014109718B4 (de) Licht emittierende Vorrichtung und Beleuchtungseinrichtung unter Verwendung derselben
DE102008016458A1 (de) Leiterplatte
DE102009056115B4 (de) Retrofit LED-Lampe mit doppelschichtigem Kühlkörper
WO2013034395A1 (fr) Dispositif d'éclairage
WO2013120962A1 (fr) Module d'éclairage
WO2009115063A1 (fr) Agencement de lampe et procédés d'émission de lumière
DE102011086359A1 (de) LED-Modul
AT524690B1 (de) Leuchtmittel mit led
DE102014110087A1 (de) Licht emittierendes Modul, Beleuchtungsvorrichtung und Beleuchtungsausstattung
WO2013120958A1 (fr) Carte à circuit imprimé pour module d'éclairage
DE112013001316T5 (de) LED-Anordnung für den Ersatz von Leuchtstoffröhren
DE102009037919A1 (de) LED-Modul, Verfahren zu dessen Herstellung und LED-Beleuchtungsvorrichtung
DE112011102961T5 (de) Hochintensitätslichtquelle
EP2376829B1 (fr) Système d'éclairage à base de diodes del
DE102008022834A1 (de) Beleuchtungseinrichtung
WO2013149890A1 (fr) Dispositif d'éclairage à del comprenant des diodes électroluminescentes de couleur menthe et de couleur ambre
WO2011157635A1 (fr) Moyen d'éclairage à l'épreuve des explosions
DE212013000310U1 (de) LED-Photovoltaik-Modul

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08715560

Country of ref document: EP

Kind code of ref document: A1

122 Ep: pct application non-entry in european phase

Ref document number: 08715560

Country of ref document: EP

Kind code of ref document: A1