WO2009106942A1 - Système de croissance de semi-conducteurs qui comprend un composant de réacteur en carbure de bore - Google Patents

Système de croissance de semi-conducteurs qui comprend un composant de réacteur en carbure de bore Download PDF

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Publication number
WO2009106942A1
WO2009106942A1 PCT/IB2009/000226 IB2009000226W WO2009106942A1 WO 2009106942 A1 WO2009106942 A1 WO 2009106942A1 IB 2009000226 W IB2009000226 W IB 2009000226W WO 2009106942 A1 WO2009106942 A1 WO 2009106942A1
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Prior art keywords
boron carbide
reactor component
reaction chamber
susceptor
reactor
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PCT/IB2009/000226
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English (en)
Inventor
Ronald Thomas Bertram Jr.
Chantal Arena
Chris Werkhoven
Ed Lindow
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S.O.I.T.E.C Silicon On Insulator Technologies
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Publication of WO2009106942A1 publication Critical patent/WO2009106942A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings

Definitions

  • This invention relates to semiconductor growth systems.
  • nitride-based semiconductors are used to grow a number of different semiconductor materials, such as nitride-based semiconductors.
  • nitride-based semiconductors include gallium nitride and its alloys.
  • Nitride-based semiconductors can be grown using many different types of semiconductor growth systems, such as those associated with metalorganic chemical vapor deposition (MOCVD) and hydride (or halide) vapor phase epitaxy (HVPE) . More information regarding MOCVD and HVPE growth systems can be found in U.S. Patent Application Nos . 200S0076559 and 20060118513, as well as in M. A. Mastro et al .
  • MOCVD metalorganic chemical vapor deposition
  • HVPE hydride halide vapor phase epitaxy
  • the semiconductor growth system typically includes a reaction chamber in which the nitride-based semiconductor is grown.
  • the nitride-based semiconductor is grown on a substrate, which is positioned within the reaction chamber and carried by one or more reactor components .
  • the reactor components can be of many different types, such as a susceptor, wafer holder and susceptor control ring, among others. In some situations, the reactor component is a heating plate which flows heat towards the substrate. More information regarding reactor components can be found in U.S. Patent Nos . 5,514,439, 5,858,486, 6,120,640, 6,410,172, 6,506,254 and 6,808,747.
  • reactor components made from these materials make it more difficult to control the density of impurities incorporated into the nitride-based semiconductor. More information regarding impurities in nitride-based semiconductors can be found in Armitage et al . Applied Physics Letters 82 3457 (2003) . [0005]
  • the reactor components can be coated with the above materials to restrict the flow of impurities to the nitride- based semiconductor. Examples of coated reactor components can be found in U.S. Patent Nos. 3,925,577, 4,264,803, 5,514,439, 6,410,172, and 7,118,781, as well as in U.S. Patent Application No. 20060225643.
  • reactor components coated with the above materials are more complicated to manufacture and often experience many different problems, such as cracking. BRIEF SUMMARY OF THE INVENTION
  • the present invention employs a semiconductor growth system which includes a reaction chamber and a first reactor component which is a single piece of boron carbide.
  • the reaction chamber is typically a Ill-nitride reaction chamber and the first reactor component is positioned within it.
  • the single piece of boron carbide consists of boron carbide and, in another embodiment, the single piece of boron carbide consists essentially of boron carbide.
  • the first reactor component can be of many different types, such as a susceptor control ring, susceptor and wafer holder.
  • the semiconductor growth system includes a second reactor component, such as a heating plate, which is a single piece of boron carbide.
  • the semiconductor growth system includes a third reactor component which includes a boron carbide coating layer. It should be noted that the boron carbide coating layer can extend over the reactor component, or a portion thereof.
  • the present invention provides a method of fabricating a semiconductor layer which includes providing a reaction chamber and positioning a first reactor component, which consists essentially of boron carbide, within the reaction chamber. In one embodiment, the first reactor component is a single piece of boron carbide. In some embodiments, the method of fabricating the semiconductor layer includes providing the semiconductor growth system with a second reactor component which is a single piece of boron carbide.
  • the method of fabricating the semiconductor layer includes providing the semiconductor growth system with a third reactor component which includes a boron carbide coating layer.
  • the present invention provides a method of manufacturing a semiconductor growth system, wherein the method includes providing a reaction chamber and providing a first reactor component, which consists essentially of boron carbide.
  • the first reactor component is a single piece of boron carbide .
  • the first reactor component is typically formed using sintering or hot pressing.
  • the method of manufacturing the semiconductor growth system includes providing the semiconductor growth system with a second reactor component which is a single piece of boron carbide.
  • method of manufacturing a semiconductor growth system includes providing the semiconductor growth system with a third reactor component which includes a boron carbide coating layer.
  • FIG. 1 is a side view of a reaction chamber, which includes a boron carbide reactor component, in accordance with the invention.
  • FIGS. 2a and 2b are perspective views of a reactor component of the reaction chamber of FIG. 1, which is embodied as a susceptor control ring.
  • FIG. 3 is a perspective view of a reactor component of the reaction chamber of FIG. 1, which is embodied as a susceptor .
  • FIG. 4 is a perspective view of a reactor component of the reaction chamber of FIG. 1, which is embodied as a wafer holder.
  • FIG. 5 is a perspective view of a wafer, which is fabricated using the reaction chamber of FIG. 1.
  • FIGS. 6a, 6b and 6c are flow diagrams of a method, in accordance with the invention, of fabricating a Ill-nitride semiconductor layer.
  • FIGS. 7a, 7b and 7c are flow diagrams of a method, in accordance with the invention, of manufacturing a semiconductor growth system.
  • the invention involves a semiconductor growth system which includes a reaction chamber and one or more reactor components which are a single piece of boron carbide.
  • the semiconductor growth system includes a another reactor component which includes a boron carbide coating layer.
  • Boron carbide is generally denoted as B 4 C and more information regarding it can be found in U.S. Patent Nos . 4,824,624 and 5,252,267.
  • the reactor component can be of many different types, such as a heating plate, susceptor control ring, susceptor and wafer holder.
  • Previous reactor components are not single pieces of boron carbide because they include a reactor component body coated with a material that does not include boron carbide, wherein the reactor component body also does not include boron carbide.
  • previous coated reactor components are two pieces of different materials and are not a single piece of boron carbide.
  • the reactor component in accordance with the invention, can include one or more pieces of boron carbide coupled together to form a single integral piece of boron carbide.
  • a piece of boron carbide is coated with a boron carbide coating so that a single piece of boron carbide is formed.
  • the reactor component consists of boron carbide and, in other embodiments, the reactor component .consists essentially of boron carbide, wherein it includes impurities, such as carbon, typically associated with the manufacturing process used to fabricate it .
  • the reactor component can be fabricated as a single piece of boron carbide in many different ways, such as by using sintering and hot pressing. More information regarding forming boron carbide using sintering and hot pressing can be found in U.S. Patent Nos. 4,017,587, 4,081,284, 4,195,066, 4,215,088, 4,320,204, 4,824,624, 5,252,267, 5,418,196, 6,120,640 and 6,808,747. Other methods of fabricating boron carbide include spray, chemical vapor deposition (CVD) and surface conversion.
  • CVD chemical vapor deposition
  • Solid plates of boron carbide produced by the hot pressing process are available commercially ' from Ceradyne, and are generally known by the trade name of CERALLOY ® . Further, Saint-Gobain Ceramics & Plastics, Inc. produces solid plates of boron carbide using hot pressing, which are know by the trade name NORBIDE ® . In some embodiments, these solid pieces of boron carbide can be processed to form the reactor component . The solid piece of boron carbide can be processed in many different ways, such as by wet and dry etching, as well as machining. [0021] There are many different reasons for using boron carbide to form one of the reactor components .
  • boron carbide is relatively inexpensive compared to other materials, such as quartz and silicon carbide, typically used to form reactor components. Another reason is that boron carbide is a material that is capable of being exposed to a high temperature caustic environment for a prolonged period of time without degrading significantly.
  • the caustic environment generally includes caustic chemicals, such as chlorine gas) at elevated temperatures which enhances their ability to etch materials typically included in reactor components. For example, it is known that quartz is etched significantly when. exposed at high temperatures to chlorine gas. More- information about materials used in reactor ' components, as well as their behavior in caustic environments, can be found in U.S. Patent Nos . 3,549,847, 5,444,217 and 5,858,486.
  • HVM high volume manufacturing
  • Boron carbide can be exposed to a high temperature without degrading significantly because it has a high melting point .
  • Some references disclose the melting point of boron carbide to be between about 2300 degrees Celsius ( 0 C) and about 2500 0 C. When fabricating nitride-based semiconductors, it is often necessary to heat the wafer to temperatures in a range of about 900 0 C to 1300 0 C.
  • Boron carbide can be exposed to a high temperature caustic environment for a prolonged period of time because it is a hard material.
  • Boron carbide is more resistant to etching because it, along with silicon carbide, are covalent carbides, and possess excellent thermal and chemical stability because they are covalent materials. In a covalent material, the bonding between the atoms included therein is more covalent than it is ionic. It is known that a covalent bond is stronger than an ionic bond.
  • boron carbide has a desired emissivity which allows it to behave as a black body radiator.
  • the emissivity of a material is the ability of its surface to emit radiant energy compared to that of a black body at the same temperature and with the same area.
  • the emissivity of a material is the ratio of the radiation emitted by its surface compared to the radiation emitted by a blackbody at the same temperature.
  • U.S. Patent No. 6,140,624 provides an emissivity for PBN of 0.55 at a wavelength 1.55 ⁇ m, while the more commonly used SiC has a value of 0.92 at the same wavelength.
  • FIG. 1 is a side view of a reaction chamber 100, which includes a boron carbide reactor component, in accordance with the invention.
  • reaction chamber 100 is typically included in a semiconductor growth system which is used to grow Ill-nitride semiconductor materials, such as gallium nitride and its alloys.
  • the semiconductor growth system can be of many different types, such as those associated with MOCVD and HVPE.
  • reaction chamber 100 is a MOCVD reaction chamber and, in other embodiments, reaction chamber- 100 is a HVPE reaction chamber. More information regarding MOCVD and HVPE reaction chambers can be found in the references cited above.
  • reaction chamber 100 is a cold-wall MOCVD reaction chamber and, in other embodiments, reaction chamber 100 is a cold-wall HVPE reaction chamber. More information regarding cold-wall reaction chambers can be found in U.S. Patent Nos . 6,218,280, 6,350,666 and 6,733,591. It should be noted that the boron carbide reactor component can be used in many other semiconductor growth and processing systems, such as those associated with vapor phase epitaxy, plasma processing, thermal diffusion furnaces and rapid thermal processors, among others.
  • reaction chamber 100 includes a housing 101, which houses the reactor components.
  • Housing 101 can be made of many different materials, but it is often made of quartz. In some embodiments, however, housing 101 can include boron carbide.
  • housing 101 can include a housing body 101a which carries a boron carbide coating layer 101b, wherein coating layer 101b is positioned so it faces the interior of housing 101.
  • housing body 101a can include a material other than boron carbide, such as those mentioned above (i.e.
  • boron carbide coating layer 101b can extend over housing 101 or a portion thereof. For example, portions of housing 101 are not covered by carbide coating layer 101b so that a window is formed and light can flow therethrough.
  • reaction chamber 100 includes heat sources 103 positioned proximate to housing 101.
  • Heat sources 103 are used to flow heat to the reactor components- housed by housing 101.
  • Heat sources 103 can be of many different types, such as infrared (IR) lamps, resistive heaters and inductive heaters.
  • IR infrared
  • An IR lamp emits infrared energy
  • a resistive heater operates by flowing a current through a wire so that heat is emitted in response and an inductive heater provides heat through magnetic energy.
  • reaction- chamber 100 includes a reactor component embodied as a heating plate 102.
  • heating plate 102 is a black body heating plate so it operates as a black body radiator which flows heat in a desired direction.
  • reaction chamber 100 includes three heating plates coupled together.
  • the heating plates can be a single integral piece .
  • heating plate 102 is a single piece of boron carbide. .Further, in some embodiments, heating plate 102 consists of boron carbide and, in other embodiments, heating plate 102 consists essentially of boron carbide.
  • Heating plate 102 can include impurities, such as carbon, typically incorporated into it during its manufacture. In these embodiments, heating plate 102 generally does not include a coating layer of boron carbide. However, in some embodiments, heating plate 102 includes a piece of boron carbide with a boron carbide coating layer formed thereon.
  • heating plate 102 does not include a coating layer of any other coating material.
  • coating materials not included are aluminum nitride, silicon carbide and boron nitride, among others.
  • heating plate 102 does not include quartz, graphite, pyrolytic graphite, silicon carbide, aluminum, aluminum nitride, boron nitride, and/or pyrolytic boron nitride in any significant amount.
  • heating plate 102 does include a boron carbide coating layer.
  • heating plate 102 can include a heating plate body 102a which carries a boron carbide coating layer 102b.
  • heating plate body 102a can include a material other than boron carbide, such as those mentioned above .
  • quartz is generally used in the manufacture of cold-wall reactor housings because of its ability to allow IR energy to flow therethrough. Hence, quartz allows IR energy from heat source 103 to heat desired portions of the reactor components positioned within housing 101, while maintaining the outer reactor walls at a lower temperature. The lower temperature of the outer reactor walls restricts the ability of material to be undesirably deposited thereon. [0035] It should also be noted that it is sometimes desirable to heat some portions of the reactor components and not others . Hence, heating plates 102 are made to operate as black body radiators which absorb heat from heat source 103 and reradiate the heat in a desired direction, such as towards a portion of the reactor component .
  • quartz is useful when IR heating is used for reactor heating.
  • the transparency of the quartz may keep its temperature well below that of the central core of the reaction chamber.
  • the quartz housing may require some heating, such as to restrict condensation of precursor gases thereon.
  • This can be achieved by the controlled positioning of one or more black body ceramic plates, which include boron carbide.
  • the boron carbide ceramic plates reradiate energy from the IR lamps at a broader spectrum, wherein the spectrum includes wavelengths more readily absorbed by the quartz housing.
  • the temperature of housing 101 can be controlled by using cooling fans to prevent over heating of the reaction chamber and boron carbide ceramic plates to flow heat in desired directions.
  • reaction chamber 100 includes a reactor component embodied as a susceptor control ring 112, wherein susceptor control ring 112 is shown in a perspective view in FIG. 2a.
  • susceptor control rings are often referred to as Saturn rings, slip rings and susceptor rings, among other names.
  • susceptor control ring 112 includes a susceptor control ring body 113 with a susceptor recess 115 extending therethrough. Susceptor recess 115 is sized and shaped to receive a susceptor 108, which will be discussed in more detail below.
  • Susceptor recess 115 can be formed in many different ways, such as by wet and/or dry etching susceptor control ring body 113 or it can be formed during the hot press formation of susceptor control ring body 113. Susceptor control ring body 113 can also be machined to form susceptor recess 115. In other embodiments, the susceptor control ring can include a susceptor control ring body 112a having an annular torus, as shown in FIG. 2b. Susceptor control ring 112 includes a rotation arm opening 114 for receiving a rotation arm 111 (FIG. 1) . Rotation arm opening 114 extends through susceptor control ring body 113 and susceptor recess 115. Rotation arm 111 is for rotating ' susceptor 108, which is useful for rotating a wafer 104. Rotating wafer 104 is useful so that the semiconductor layers included with it have a more uniform thickness.
  • susceptor control ring 112 is a single piece of boron carbide. Further, in some embodiments, susceptor control ring ' 112 consists of boron carbide and, in other embodiments, susceptor control ring 112 consists essentially of boron carbide. Susceptor control ring 112 can include impurities, such as carbon, typically incorporated into it during its manufacture. In these embodiments, susceptor control ring 112 generally does not include a coating layer of boron carbide. However, in some embodiments, susceptor control ring 112 includes a piece of boron carbide with a boron carbide • coating layer formed thereon.
  • susceptor control ring 112 does not include a coating layer of any, other coating material. Examples of coating materials not included are aluminum nitride, silicon carbide and boron nitride, among others. Also, in these embodiments, susceptor control ring 112 does not include quartz, graphite, pyrolytic graphite, silicon carbide, aluminum, aluminum nitride, boron nitride, and/or pyrolytic boron nitride in any significant amount. [0040] It is useful when susceptor control ring 112 is a single piece of boron carbide because it can absorb heat from heating plate 102 and/or heat source 103.
  • susceptor control ring 112 can heat growth gases before the growth gases flow to wafer 104. In this way, the growth gases are preheated by susceptor control ring 112. The growth gases are preheated so that the semiconductor layers included with wafer 104 are of higher quality and more uniform. Susceptor control ring 112 also reduces the temperature gradient across wafer 104 so that the semiconductor layers included with it are more uniform.
  • susceptor control ring 112 does include a boron carbide coating layer.
  • susceptor control ring 112 can include a boron carbide coating layer 113a positioned on susceptor control ring body 113.
  • susceptor control ring body 113 can include a material other than boron carbide, such as those mentioned above. It should be noted that boron carbide coating layer 113a can extend over susceptor control ring 112 or a portion of it.
  • reaction chamber 100 includes a reactor component embodied as a susceptor 108, wherein susceptor 108 is shown in a perspective view in FIG. 3.
  • susceptor 108 includes a susceptor body 109 with a wafer holder recess 110 extending therethrough.
  • Wafer holder recess 110 is sized and shaped to receive a wafer holder 107, which will be discussed in more detail below.
  • Wafer holder recess 110 can be formed in many different ways, such as by wet and/or dry etching susceptor body 109.
  • Susceptor body 109 can also be machined to form wafer holder recess 110.
  • susceptor 108 is a single piece of boron carbide. Further, in some embodiments, susceptor 108 consists of boron carbide and, in other embodiments, susceptor 108 consists essentially of boron carbide. Susceptor 108 can include impurities, such as carbon, typically incorporated into it during its manufacture. In these embodiments, susceptor 108 generally does not include a coating layer of boron carbide. However, in some embodiments, susceptor 108 includes a piece of boron carbide with a boron carbide coating layer formed thereon. It is useful when susceptor 108 is a single piece of boron carbide because a larger percentage of the heat from heating plate 102 and/or heat source 103 is directed towards wafer 104 and wafer holder 107.
  • susceptor 108 does not include a coating layer of any other coating material.
  • coating materials not included are aluminum nitride, silicon carbide and boron nitride, among others.
  • susceptor 108 does not include quartz, graphite, silicon carbide, aluminum, aluminum nitride, boron nitride, and/or pyrolytic boron nitride in any significant amount.
  • susceptor 108 does include a boron carbide coating layer.
  • susceptor 108 can include a boron carbide coating layer 109a positioned on susceptor body 109.
  • susceptor body 109 can include a material other than boron carbide, such as those mentioned above.
  • reaction chamber 100 includes a reactor component embodied as a wafer holder 107, which is used to hold one or more wafers 104.
  • Wafer holder 107 is shown in a perspective view in FIG. 4.
  • wafer holder 107 is a single piece of boron carbide.
  • wafer holder 107 consists of boron carbide and, in other embodiments, wafer holder 107 consists essentially of boron carbide.
  • Wafer holder 107 can include impurities, such as carbon, typically incorporated into it during its manufacture.
  • wafer holder 107 generally does not include a coating layer of boron carbide.
  • wafer holder 107 includes a piece of boron carbide with a boron carbide coating layer formed thereon.
  • wafer holder 107 does not include a coating layer of any other coating material.
  • coating materials not included are aluminum nitride, silicon carbide and boron nitride, among others.
  • wafer holder 107 does not include quartz, graphite, pyrolytic graphite, silicon carbide, aluminum, aluminum nitride, boron nitride, and/or pyrolytic boron nitride in any significant amount .
  • wafer holder 107 does include a boron carbide coating layer.
  • wafer holder 107 can include a wafer holder body 107a which carries a boron carbide coating layer 107b.
  • wafer holder body 107a can include a material other than boron carbide, such as those mentioned above .
  • reaction chamber 100 generally includes one or more reactor components that are a single piece of boron carbide.
  • wafer holder 107 is a single piece of boron carbide and each of heating plates 102 is a single piece of boron carbide.
  • susceptor 108 is a single piece of boron carbide
  • wafer holder 107 is a single piece of boron carbide
  • susceptor control ring 112 includes a different material, such as quartz .
  • reaction chamber 100 includes one or more reactor components that are a single piece of boron carbide, and another reactor component that has a boron carbide coating layer.
  • susceptor control ring 112 is a single piece of boron carbide and susceptor 108 includes susceptor body 109 which carries boron carbide coating layer 109a.
  • susceptor 108 is a single piece of boron carbide
  • wafer holder 107 is a single piece of boron carbide
  • susceptor control ring 112 includes susceptor control ring body 113 which carries boron carbide coating layer 113a.
  • MOCVD and HVPE growth systems include various types of tubing, delivery lines, liquid and gas containers, inlet and outlet valves, fittings, seals, wafer boats, liners, shields, tubes, crucibles, etc. More information regarding these components can be found in U.S. Patent Nos . 3,549,847, 5,444,217 and 5,858,486. Further, it is known that these components can be positioned within reaction chamber 100, wherein they are exposed to high temperature and caustic environments for prolonged periods of time.
  • a single piece of boron carbide is manufactured to protect one or more of these components from heat and caustic chemicals associated with growing semiconductor layers.
  • any area of the reactor system, external to the reaction ' chamber which requires protection from a high temperature/corrosive environment will benefit from being produced from boron carbide or coated with a ! boron carbide coating layer.
  • one or more of the tubing, delivery lines, liquid/gas containers, inlet and outlet valves, fittings, seals etc. can be coated with a boron carbide coating layer.
  • the resistance of the boron carbide coating layer to the high temperature and corrosive chemical environment of reaction chamber 100 assists in maintaining its operation, which increases its productivity.
  • FIG. 5 is a perspective view of wafer 104.
  • Wafer 104 can have many different configurations, but, in this embodiment, wafer 104 includes a substrate 105 which carries a semiconductor layer 106.
  • Substrate 105 can include many different types of materials, such as sapphire and silicon carbide.
  • semiconductor layer 106 can include many different types of materials, such as a nitride-based semiconductor. It should be noted that semiconductor layer 106 is shown as being a single layer of material for illustrative purposes. However, one or more semiconductor layers are typically grown on substrate 105 and a solid-state device is formed therewith.
  • the solid-state devices can be of many different types, such as optical and non- optical devices.
  • Optical devices generally include lasers, light emitting diodes and photodetectors
  • non-optical devices generally include diodes and transistors, among others.
  • substrate 105 can be of many different sizes. However, substrate 105 typically has a diameter between about 50 millimeters to 100 millimeters when semiconductor layer 106 includes a nitride-based semiconductor.
  • susceptor control ring 112 is positioned within housing 101 so that rotation arm 111 extends through it.
  • Susceptor 108 is positioned within housing 101 so that it is coupled to rotation arm 111.
  • susceptor 108 rotates in response to the rotation of rotation arm 111.
  • Susceptor 108 extends through susceptor recess 115 when it is coupled to rotation arm 111.
  • Wafer holder 107 is positioned within housing 101 so it is carried by susceptor 108.
  • Wafer holder 107 is carried by susceptor 108 by positioning it so it extends through wafer holder recess 110.
  • Wafer 104 is positioned within housing 101 so it is carried by wafer holder 107. It should be noted that, in some embodiments, wafer holder 107 is removed from housing 101 so that wafer 104 can be positioned so it is carried by susceptor 108. When wafer 104 is carried by susceptor 108, it is generally positioned so it extends through wafer holder recess 110.
  • Heat source 103 provides heat which flows to heating plate 102.
  • heating plate 102 includes a heat transparent material, such as quartz, the heat flows therethrough 'and is incident to susceptor control ring 112, susceptor 108, wafer holder 107 and/or wafer 104-.
  • heating plate 102 operates as a black body radiator, heat is absorbed by it and reradiated towards susceptor control ring 112, susceptor 108, wafer holder 107 and/or wafer 104.
  • heating plate 102 operates as a black body radiator when it includes boron carbide .
  • wafer holder 107 includes a single piece of boron carbide and semiconductor layer 106 includes a Ill-nitride semiconductor material because these materials have similar coefficients of thermal expansion (CTE) .
  • CTE coefficients of thermal expansion
  • the amount of wafer slip between wafer holder 107 and semiconductor layer 106 is reduced when their CTE 's are driven to match each other. Strain in semiconductor layer 106 occurs in response to wafer slip. Hence, in some situations, it is desirable to decrease the amount of slip to decrease the amount of strain in semiconductor layer 106. This is especially true as the thickness of semiconductor layer 106 increases because a thicker semiconductor layer generally has more strain than a thinner semiconductor layer of the same material . It should be noted that the strain in a semiconductor layer can be tensile or compressive
  • FIG. 6a is a flow diagram of a method 200, in accordance with the invention, of fabricating a semiconductor layer.
  • method 200 includes a step 201 of providing a reaction chamber.
  • the reaction chamber can be of many different types, such as those discussed in more detail above.
  • the reaction chamber is generally one that is capable of forming nitride-based semiconductors.
  • method 200 includes a step 202 of positioning a first reactor component, which consists essentially of boron carbide, within the reaction chamber.
  • the first reactor component is a single piece of boron carbide.
  • the first reactor component is a single piece of boron carbide with a boron carbide coating layer formed thereon.
  • method 200 can include many other steps.
  • method 200 includes a step of fabricating the semiconductor layer with the reaction chamber and first reactor component.
  • the first reactor component is a susceptor or wafer holder
  • a substrate is typically carried by it, and the semiconductor layer is formed on the substrate.
  • method 200 includes a step of positioning a second reactor component within the reaction chamber, wherein the second reactor component consisting essentially of boron carbide. In some embodiments, method 200 includes a step of positioning a third reactor component within the reaction chamber, wherein the third reactor component includes a boron carbide coating layer.
  • method 200 includes a step of positioning a support substrate on the first reactor component and growing a semiconductor layer thereon.
  • the coefficient of thermal expansion of the semiconductor layer can be chosen to match the coefficient of thermal expansion of the first reactor component .
  • method 200 includes a step of coating one or more of the reactor components of the reaction chamber with a boron carbide layer.
  • the reactor component (s) include tubing, delivery lines, liquid and gas containers, inlet and outlet valves, fittings, seals, wafer boats, liners, shields, tubes, crucibles, etc.
  • FIG. 6b is a flow diagram of a method 210, in accordance with the invention, of fabricating a Ill-nitride semiconductor layer.
  • method 210 includes a step 211 of -providing a reaction chamber and a step 212 of positioning a first reactor component, which is a single piece of boron carbide, within the reaction chamber.
  • the first reactor component consists essentially of boron nitride. It should be noted that the first reactor component does not include quartz, aluminum and/or aluminum nitride. Further, the first reactor component does not include a coating layer, such as a layer of silicon carbide and aluminum nitride.
  • method 220 includes a step of positioning a second reactor component within the reaction chamber, wherein the second reactor component includes a boron carbide coating layer.
  • method 210 includes a step of fabricating the ' Ill-nitride semiconductor layer with the reaction chamber and first reactor component.
  • first reactor component is a heating plate
  • a substrate is typically positioned so that the heating plate directs heat at it, and the semiconductor layer is formed on the substrate.
  • FIG. 6c is a flow diagram of a method 215 ' , in accordance with the invention, of fabricating a semiconductor layer.
  • method 215 includes a step 216 of providing a reaction chamber and a step 217 of positioning a reactor component, which includes boron carbide, within the reaction chamber.
  • the reactor component is a single piece of 1 boron carbide.
  • the reactor component includes a boron carbide coating layer.
  • the reactor component can include a boron carbide coating layer formed on a reactor component body, wherein the reactor component body includes a material, such as quartz, sapphire, graphite, etc., that is not boron carbide.
  • method 215' includes a step of fabricating the semiconductor layer with the reaction chamber and reactor component.
  • the first reactor component is a susceptor control ring
  • a substrate is typically positioned so that it is carried by the susceptor control ring, and the semiconductor layer is formed on the substrate.
  • FIG. 7a is a flow diagram of a method 220, in accordance with the invention, of manufacturing a semiconductor growth system.
  • method 220 includes a step 221 of providing a reaction chamber.
  • the reaction chamber can be of many different types, such as those discussed in more detail above.
  • method 220 includes a step 222 of providing a first reactor component, which consists essentially of boron carbide.
  • the first reactor component is positioned within the reaction chamber.
  • the first reactor component is a single piece of boron carbide.
  • the first reactor component can be provided in many different ways. In some situations, it is provided to the user already manufactured and, in other situations, it is manufactured by the user.
  • the first reactor component can be manufactured in many different ways, such as those discussed in more detail above.
  • method 220 can include many other steps.
  • method 220 includes a step of providing a second reactor component.
  • the second reactor component consists essentially of boron carbide and typically is a single piece of material.
  • the first and second reactor components can be of many different types, such as those discussed in more detail above.
  • method 220 includes a step of positioning a third reactor component within the reaction chamber, wherein the third reactor component includes a boron carbide coating layer. In some embodiments, method 220 includes a step of coating one or more of the reactor components of the semiconductor growth system with a boron carbide layer.
  • the reactor component (s) include tubing, delivery lines, liquid and gas containers, inlet and outlet valves, fittings, seals, wafer boats, liners, shields, tubes, crucibles, etc.
  • FIG. 7b is a flow diagram of a method 230, in accordance with the invention, of manufacturing a semiconductor growth system.
  • method 230 includes a step 231 of providing a reaction chamber and a step 232 of providing a reactor component, which is a single piece of boron carbide, and positioning it within the reaction chamber.
  • the reactor component consists essentially of boron nitride . It should be noted that the reactor component does not include quartz, aluminum and/or aluminum nitride. Further, the reactor component does not include a coating layer, such as a layer of silicon carbide and aluminum nitride.
  • method 200 can include many other steps, several of which are discussed in more detail with method 210.
  • method 220 can include many other steps, several of which are discussed in more detail with method 230.
  • the steps in methods 200, 210, 220 and 230 can be performed in many different orders.
  • FIG. 7c is a flow diagram of a method 235, in accordance with the invention, of manufacturing a semiconductor growth system.
  • method 235 includes a step 236 of providing a reaction chamber and a step 237 of providing a reactor component, which includes boron carbide.
  • the reactor component is positioned within the reaction chamber.
  • the reactor component is a single piece of boron carbide.
  • the reactor component includes a boron carbide coating layer.
  • the reactor component can include a boron carbide coating layer formed on a reactor component body, wherein the reactor component body includes a material, such as quartz, that is not boron carbide.

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Abstract

La présente invention utilise un système de croissance de semi-conducteurs qui comprend une chambre de réaction et un composant de réacteur qui est une pièce unique de carbure de bore. La chambre de réaction est typiquement une chambre de réaction de nitrure III et le composant de réacteur est positionné à l'intérieur. Le composant de réacteur peut être de différents types, comme un anneau de contrôle de suscepteur, un suscepteur et un support de plaquette.
PCT/IB2009/000226 2008-02-27 2009-01-05 Système de croissance de semi-conducteurs qui comprend un composant de réacteur en carbure de bore WO2009106942A1 (fr)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009025971A1 (de) * 2009-06-15 2010-12-16 Aixtron Ag Verfahren zum Einrichten eines Epitaxie-Reaktors
EP4089065A4 (fr) * 2020-02-12 2024-03-27 SK enpulse Co., Ltd. Composant en céramique et appareil de gravure au plasma l'utilisant

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6108190A (en) * 1997-12-01 2000-08-22 Kyocera Corporation Wafer holding device
EP1065913A2 (fr) * 1999-07-02 2001-01-03 Advanced Ceramics Corporation Elément chauffant émettant des radiations en nitrure de bore pyrolitique
US6506254B1 (en) * 2000-06-30 2003-01-14 Lam Research Corporation Semiconductor processing equipment having improved particle performance

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6108190A (en) * 1997-12-01 2000-08-22 Kyocera Corporation Wafer holding device
EP1065913A2 (fr) * 1999-07-02 2001-01-03 Advanced Ceramics Corporation Elément chauffant émettant des radiations en nitrure de bore pyrolitique
US6506254B1 (en) * 2000-06-30 2003-01-14 Lam Research Corporation Semiconductor processing equipment having improved particle performance

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009025971A1 (de) * 2009-06-15 2010-12-16 Aixtron Ag Verfahren zum Einrichten eines Epitaxie-Reaktors
EP4089065A4 (fr) * 2020-02-12 2024-03-27 SK enpulse Co., Ltd. Composant en céramique et appareil de gravure au plasma l'utilisant

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