WO2009100603A1 - 一种发光二极管及其制造方法 - Google Patents
一种发光二极管及其制造方法 Download PDFInfo
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- WO2009100603A1 WO2009100603A1 PCT/CN2008/001037 CN2008001037W WO2009100603A1 WO 2009100603 A1 WO2009100603 A1 WO 2009100603A1 CN 2008001037 W CN2008001037 W CN 2008001037W WO 2009100603 A1 WO2009100603 A1 WO 2009100603A1
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- WO
- WIPO (PCT)
- Prior art keywords
- light emitting
- layer
- heat sink
- substrate
- light
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 26
- 239000004065 semiconductor Substances 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 27
- 229910052750 molybdenum Inorganic materials 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 229910052804 chromium Inorganic materials 0.000 claims description 10
- 229910052697 platinum Inorganic materials 0.000 claims description 10
- 229910052721 tungsten Inorganic materials 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910002601 GaN Inorganic materials 0.000 claims description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 238000007731 hot pressing Methods 0.000 claims description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 2
- 238000003475 lamination Methods 0.000 abstract 1
- 239000010931 gold Substances 0.000 description 10
- 230000017525 heat dissipation Effects 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
Definitions
- the present invention relates to a light emitting diode and a method of fabricating the same, and more particularly to a light emitting diode manufactured by an ultrasonic hot pressing method and a method of fabricating the same. Background technique
- the flip chip since the flip chip also uses a two-electrode design, the power loss due to the reduction in the light-emitting area and the uneven current spread is about 50%. At present, the luminous efficiency of the light-emitting chip manufactured by the flip-chip technology can only reach 40 to 50 lumens/watt at most, and the lighting requirement cannot be achieved. Therefore, there is a need for a light-emitting chip capable of increasing the light-emitting area and reducing the heat resistance to improve heat dissipation efficiency. Summary of the invention
- the present invention provides a vertical structure single-electrode light-emitting chip which increases the light-emitting area and reduces the thermal resistance between the chip and the substrate.
- the present invention also provides a method of fabricating the light emitting diode, which employs an ultrasonic hot pressing method, thereby improving the yield of the light emitting diode.
- a light emitting diode including a heat sink substrate; a metal bonding layer formed on the heat sink substrate; a reflective layer formed on the metal bonding layer; and a light emitting laminate formed on the reflective layer
- the light emitting laminate includes a P-type semiconductor layer, a light-emitting layer, and an n-type semiconductor layer which are sequentially formed; and two electrode layers respectively formed on the back side of the heat sink substrate and the n-type semiconductor layer. It should be noted that the positions of the P-type semiconductor layer and the n-type semiconductor layer may be interchanged. Also, an ohmic contact layer may be formed between the electrode layer and the layer in contact therewith.
- the light-emitting area of the light-emitting diode is improved.
- the light-emitting layer is connected to the heat sink substrate via the reflective layer and the metal bonding layer having low heat resistance, the thermal resistance between the light-emitting chip and the heat sink substrate is lowered, and heat dissipation efficiency is improved.
- the light emitting diode may further include a transparent electrode layer formed between the reflective layer and the light emitting laminate.
- the material of the transparent electrode layer is, for example, selected from indium tin oxide, Ru02, ZnO, and NiO, or a combination thereof.
- the material of the heat sink substrate is a material having a good thermal conductivity, for example, selected from the group consisting of silicon, copper, gallium nitride, molybdenum, silicon carbide, or a combination thereof.
- the material of the metal bonding layer is, for example, selected from the group consisting of Al, Ag, Pt, Cr, Mo, W, Au or a combination thereof.
- the material of the reflective layer is, for example, selected from the group consisting of Al, Ag, Pt, Cr, Mo, W, Au or a combination thereof.
- a method of fabricating a light emitting diode comprising: preparing a heat sink substrate; plating a metal bonding layer on a surface of the heat sink substrate; preparing a light emitting chip, the light emitting chip a substrate comprising: a light-emitting layer formed on the substrate; and a reflective layer formed on the light-emitting layer, the light-emitting layer comprising an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer deposited in sequence; using ultrasonic hot pressing method
- the metal bonding layer on the heat sink substrate is bonded to the reflective layer on the light emitting chip; the substrate of the light emitting chip is removed; and the electrodes are respectively formed on the back surface of the heat sink substrate and the surface exposed after removing the substrate of the light emitting chip.
- the method of removing the substrate of the light-emitting chip includes abrasive polishing, chemical solvent peeling, or laser lift-off.
- the light-emitting chip used in the method according to the present invention is a single independent chip that has been cut, and the temperature at which the light-emitting chip is thermally pressed onto the heat sink substrate by ultrasonic waves is not high, the substrate on which the light-emitting chip is removed is not Stress is generated, so the process is simpler and the yield of the LED is increased.
- FIG. 1 is a cross-sectional view showing the structure of a light emitting diode according to an embodiment of the present invention
- FIGS. 3A-3E are schematic views of a method of fabricating a light emitting diode according to an embodiment of the present invention.
- a light emitting diode according to an embodiment of the present invention includes two main portions, a light emitting chip portion F1 and a heat sink substrate portion F2.
- the light-emitting chip portion F] includes a reflective layer 4, a transparent electrode layer 3, a p-type semiconductor layer 5, a light-emitting layer 6, and an n-type semiconductor layer 7 which are sequentially stacked.
- the transparent electrode layer 3 may be omitted.
- the positions of the p-type semiconductor layer 5 and the n-type semiconductor layer 7 may also be interchanged. As shown in FIG.
- the n-side electrode 8 is formed on the n-type semiconductor layer 7.
- An ohmic contact layer (not shown) may also be formed between the n-side electrode 8 and the n-type semiconductor layer 7.
- a solder pad 9 may also be formed on the n-side electrode 8 to be connected to an external circuit.
- the electrode 8 is a p-side electrode, and the electrode 8 and the p-type semiconductor layer 5 may also be formed.
- An ohmic contact layer (not shown).
- the material of the transparent electrode layer 3 is, for example, selected from indium tin oxide (IT0), Ru02, ZnO, and NiO, or a combination thereof.
- the light-emitting laminate can be made of InGaN or Al InGaP material.
- the material of the reflective layer 4 is, for example, selected from the group consisting of Al, Ag, Pt, Cr, Mo, W, Au or a combination thereof.
- the heat sink substrate portion F2 includes a heat sink substrate 10 which is sequentially stacked, and a metal bonding layer 2 formed on the heat sink substrate 10.
- An ohmic contact layer (not shown) may also be formed between the heat sink substrate 10 and the metal bonding layer 2.
- An opposite electrode 1 is formed at the bottom of the heat sink substrate 10, which is opposite to the polarity of the electrode 8. In other words, when the electrode 8 is the ri side electrode, the electrode 1 is the P side electrode. When the electrode 8 is a p-side electrode, the electrode 1 is an n-side electrode.
- the material of the heat sink substrate 10 is a material having a good thermal conductivity, for example, selected from the group consisting of silicon, copper, gallium nitride, molybdenum, silicon carbide, or a combination thereof.
- the material of the metal bonding layer 2 is, for example, selected from the group consisting of Al, Ag, Pt, Cr, Mo, W, Au or a combination thereof.
- the heat sink substrate portion F2 and the light emitting chip portion F1 are bonded together by bonding the reflective layer 4 and the metal bonding layer 2.
- FIG. 2 is a schematic plan view of a plurality of light emitting chips on a heat sink substrate in accordance with an embodiment of the present invention.
- a plurality of light-emitting chip portions F1 as shown in Fig. 1 are formed on a single heat sink substrate F2 having a metal bonding layer 2 formed on its surface.
- the heat sink substrate F2 is cut in accordance with the light emitting chip portion F1, a separate light emitting diode structure is formed.
- the material of the metal bonding layer is made of conductive rubber or gold-tin alloy, and its thermal conductivity is low, ranging from lOW/mOC to 55W/mOC.
- the metal bonding layer is made of a material having a high thermal conductivity such as aluminum (A1), silver (Ag), gold (Au) or the like.
- aluminum (A1) has a thermal conductivity of 237 W/mOC
- silver (Ag) has a thermal conductivity of 427 W/mOC
- gold (Au) has a thermal conductivity of 315 W/mOC.
- the thermal conductivity of the metal bonding layer material is high and the light emitting chip is directly attached to the heat sink substrate, so the thermal resistance between the light emitting chip and the heat sink substrate is low, and the heat dissipation efficiency is improved.
- 3A-3E are schematic views of a method of fabricating a light emitting diode in accordance with an embodiment of the present invention.
- a heat sink substrate 10 on which a metal bonding layer 2 is formed is prepared.
- the material of the heat sink substrate 10 is a material having a good thermal conductivity, for example, selected from the group consisting of silicon, copper, gallium nitride, molybdenum, silicon carbide, or a combination thereof.
- the material of the metal bonding layer 2 is, for example, selected from the group consisting of Al, Ag, Pt, Cr, Mo, W, Au, or a combination thereof.
- An ohmic contact layer (not shown) may also be formed between the heat sink substrate 10 and the metal bonding layer 2.
- a light-emitting chip was prepared.
- the light emitting chip includes an n-type semiconductor layer 7, a light-emitting layer 6, a p-type semiconductor layer 5, a transparent electrode layer 3, and a reflective layer 4 which are sequentially stacked on a substrate 11. Further, in the variation of this embodiment, the transparent electrode layer 3 may be omitted. Moreover, the positions of the p-type semiconductor layer 5 and the n-type semiconductor layer 7 may be interchanged.
- the substrate 11 of the light-emitting chip is made of, for example, sapphire, gallium arsenide or silicon.
- the material of the transparent electrode layer 3 is, for example, selected from indium tin oxide (ITO), Ru02, ZnO, and NiO, or a combination thereof.
- the light-emitting laminate, i.e., the n-type semiconductor layer 7, the light-emitting layer 6, and the germanium-type semiconductor layer 5 may be made of a material of InGaN or Al InGaP.
- the material of the reflective layer 4 is, for example, selected from the group consisting of Al, Ag, Pt, Cr, Mo, W, Au or a combination thereof.
- the metal bonding layer 2 on the heat sink substrate 10 is bonded to the reflective layer 4 on the light-emitting chip by ultrasonic hot pressing. Then, as shown in Fig. 3D, the substrate 11 of the light-emitting chip is removed by a method of not generating stress such as polishing, chemical solvent peeling or laser lift-off.
- the n-side and p-side electrodes 8 and 1 may be formed on the back surface of the heat sink substrate 10 and the surface exposed after the substrate on which the light-emitting chip is removed, respectively.
- the n-side and p-side electrodes can also be formed in the previous steps as needed.
- the light-emitting chip used in the method according to the present invention is a single independent chip that has been cut, and the temperature of the plurality of individual independent light-emitting chips is thermally pressed onto the heat sink substrate by ultrasonic waves does not exceed 1800 C (existing Since the bonding temperature of the technology exceeds 3000 C), the substrate of the single independent light-emitting chip of the present invention is removed without stress, so that the process is simpler and the yield of the light-emitting diode is increased.
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
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Description
一种发光二极管及其制造方法 技术领域
本发明涉及一种发光二极管及其制造方法， 尤其涉及一种采用超声波热压方法制造 的发光二极管及其制造方法。 背景技术
随着半导体芯片工艺的不断发展， 传统的工艺己经不能满足对于发光二极管的发光 效率和亮度的日益增加的要求。 由于其散热佳、 发光效率高且功率大的优点， 采用倒装 片芯片工艺制造的发光二极管逐渐取代采用传统工艺制造的发光二极管而成为 LED发光 二极管的主流。 由于采用倒装片芯片工艺制造的发光二极管具有良好的散热效果， 因此 即使在大电流的驱动下， 芯片也不会过热。 所以芯片的发光面积可以被进一步增加， 例 如为 1睡 X 1隱， 且工作电流也可以被增加到例如 300 mA到 500 mA, 而功率则可达到 1 W。
然而， 由于倒装片芯片还是使用双电极设计， 使得其出光面积的减少和电流不均匀 扩散引起的功率损耗约为 50%。 目前采用倒装片技术制造的发光芯片的发光效率最多只 能达到 40到 50流明 /瓦， 尚不能达到照明的要求。 因此需要一种能够增加出光面积并且 降低热阻以提高散热效率的发光芯片。 发明内容
为了解决上述的问题， 本发明提供了一种垂直结构的单电极发光芯片， 其增加了出 光面积并且降低了芯片与基板之间的热阻。
本发明还提供了一种该发光二极管的制造方法， 其采用了超声波热压方法， 从而提 高了发光二极管的良率。
根据本发明的一方面， 提供了一种发光二极管， 其包括热沉基板； 形成于热沉基板 上的金属接合层； 形成于金属接合层上的反射层； 形成于反射层上的发光叠层， 该发光 叠层包括依次形成的 P型半导体层、 发光层和 n型半导体层； 以及分别形成于热沉基板 的背侧和 n型半导体层上的两个电极层。应当注意的是， P型半导体层和 n型半导体层的 位置可以互换。 而且在电极层和与之接触的层之间可以形成欧姆接触层。
由于在作为发光二极管的发光表面的半导体层侧仅形成了单个电极， 因此提高了发 光二极管的出光面积。 而且由于发光叠层经由热阻低的反射层和金属接合层连接到热沉 基板， 因此降低了发光芯片和热沉基板之间的热阻， 提高了散热效率。
- 1- 确 认 本
可选地， 发光二极管还可以包括透明电极层， 其形成于反射层和发光叠层之间。 透 明电极层的材料例如选自氧化铟锡、 Ru02、 ZnO及 NiO或其组合。
另外， 热沉基板的材料为具有良好热导率的材料， 例如选自硅、 铜、 氮化镓、 钼、 碳化硅或其组合。
金属接合层的材料例如选自 Al、 Ag、 Pt、 Cr、 Mo、 W、 Au或其组合。 且反射层的材 料例如选自 Al、 Ag、 Pt、 Cr、 Mo, W、 Au或其组合。
根据本发明的另一方面， 还提供了一种发光二极管的制造方法， 所述方法包括： 制 备热沉基板； 在热沉基板的表面上镀覆金属接合层； 制备发光芯片， 所述发光芯片包括 基板、 形成于基板上的发光叠层和形成于发光叠层上的反射层， 所述发光叠层包括依次 沉积的 n型半导体层、 发光层和 p型半导体层； 采用超声波热压法将热沉基板上的金属 接合层与发光芯片上的反射层接合； 移除发光芯片的基板； 以及在热沉基板的背面上和 移除发光芯片的基板之后暴露的表面上分别形成电极。
另外， 移除发光芯片的基板的方法包括研磨抛光、 化学溶剂剥离或激光剥离。
由于根据本发明的方法所使用的发光芯片是已经切割好的单颗独立芯片， 且用超声 波将发光芯片热压贴合到热沉基板上的温度不高，故移除发光芯片的基板不会产生应力， 因此工艺上更加简单， 增加了发光二极管的良率。 附图说明
图 1为根据本发明的实施例的发光二极管的结构剖面示意图；
图 2为根据本发明的实施例的在热沉基板上具有多个发光芯片的平面示意图； 以及 图 3A— 3E为根据本发明的实施例制造发光二极管的方法的示意图。 具体实施方式
现将参考附图通过实施例详细描述本发明。 为了示出的方便， 附图并未按照比例绘 制。
图 1为根据本发明的实施例的发光二极管的结构剖面示意图。 如图 1所示， 根据本 发明的一个实施例的发光二极管包括两个主要部分， 即发光芯片部分 F1和热沉基板部分 F2。 发光芯片部分 F】包括依次堆叠的反射层 4、 透明电极层 3、 p型半导体层 5、 发光层 6以及 n型半导体层 7。 另外， 在该实施例的变体中， 也可以省略透明电极层 3。 而且， p 型半导体层 5和 n型半导体层 7的位置也可以互换。 如图 1所示， n侧电极 8形成于 n 型半导体层 7上。在 n侧电极 8和 n型半导体层 7之间还可以形成欧姆接触层（未示出）。
在 n侧电极 8上还可以形成焊垫 9以与外部电路连接。可替换地， 当 p型半导体层 5和 n 型半导体层 7相对于图 1所示的位置互换时， 则电极 8为 p侧电极， 且电极 8和 p型半 导体层 5之间也可以形成欧姆接触层 （未示出） 。
透明电极层 3的材料例如选自氧化铟锡 （IT0) 、 Ru02、 ZnO及 NiO或其组合。 发光 叠层可以由 InGaN或 Al InGaP材料制成。反射层 4材料例如选自 Al、 Ag、 Pt、 Cr、 Mo、 W、 Au或其组合。
热沉基板部分 F2包括依次堆叠的热沉基板 10以及形成于热沉基板 10上的金属接合 层 2。 在热沉基板 10和金属接合层 2之间也可以形成欧姆接触层 （未显示） 。 在热沉基 板 10的底部形成有相对电极 1， 其与电极 8的极性相反。 换言之， 当电极 8为 ri侧电极 时， 电极 1为 P侧电极。 而当电极 8为 p侧电极时， 电极 1为 n侧电极。
另外， 热沉基板 10的材料为具有良好热导率的材料， 例如选自硅、铜、氮化镓、钼、 碳化硅或其组合。 金属接合层 2的材料例如选自 Al、 Ag、 Pt、 Cr、 Mo, W、 Au或其组合。
热沉基板部分 F2和发光芯片部分 F1通过将反射层 4和金属接合层 2接合而贴合在 一起。
图 2为根据本发明的实施例的在热沉基板上具有多个发光芯片的平面示意图。如图 2 所示， 多个如图 1所示的发光芯片部分 F1形成于其表面形成有金属接合层 2的单个热沉 基板 F2上。 将热沉基板 F2按照发光芯片部分 F1切割后， 就形成了单独的发光二极管结 构。
由于在作为发光二极管的发光表面的半导体层侧仅形成了单个电极， 因此提高了发 光二极管的出光面积。 目前普遍的工艺中， 金属结合层的材料采用导电胶或者金锡合金， 其导热系数较低， 介于 lOW/mOC至 55W/mOC之间。 而本发明的工艺中， 金属结合层采用 导热系数很高的材料， 如铝 （A1 ) 、 银 （Ag) 、 金 （Au ) 等。 其中， 铝 （A1 ) 的导热系 数为 237W/mOC， 银（Ag ) 的导热系数为 427W/mOC, 金（Au ) 的导热系数为 315W/mOC。 由 于本发明的工艺中， 金属结合层材料的导热系数很高且发光芯片是直接贴合到热沉基板 上， 故发光芯片和热沉基板之间的热阻很低， 提高了散热效率。
现将参考附图描述根据本发明的实施例的制造发光二极管的方法。图 3A— 3E为根据 本发明的实施例制造发光二极管的方法的示意图。
如图 3A所示， 制备其上形成有金属接合层 2的热沉基板 10。 热沉基板 10的材料为 具有良好热导率的材料， 例如选自硅、 铜、 氮化镓、 钼、 碳化硅或其组合。 金属接合层 2 的材料例如选自 Al、 Ag、 Pt、 Cr、 Mo、 W、 Au或其组合。 在热沉基板 10和金属接合层 2 之间也可以形成欧姆接触层 （未显示） 。
如图 3B所示， 制备发光芯片。 该发光芯片包括依次堆叠在基板 11上的 n型半导体 层 7、 发光层 6、 p型半导体层 5、 透明电极层 3、 和反射层 4。 另外， 在该实施例的变体 中， 也可以省略透明电极层 3。 而且， p型半导体层 5和 n型半导体层 7的位置也可以互 换。
发光芯片的基板 11例如由蓝宝石、 砷化镓或硅制成。 透明电极层 3的材料例如选自 氧化铟锡 （ITO) 、 Ru02、 ZnO及 NiO或其组合。 发光叠层即 η型半导体层 7、 发光层 6 和 Ρ型半导体层 5可以由 InGaN或 Al InGaP的材料制成。反射层 4材料例如选自 Al、 Ag、 Pt、 Cr、 Mo、 W, Au或其组合。
如图 3C所示， 采用超声波热压法将热沉基板 10上的金属接合层 2与发光芯片上的 反射层 4接合。 然后， 如图 3D所示， 通过例如研磨抛光、 化学溶剂剥离或激光剥离等的 不产生应力的方法， 移除发光芯片的基板 11。
如图 3E所示， 在形成上述结构之后， 可以在热沉基板 10的背面上和移除发光芯片 的基板之后暴露的表面上分别形成 n侧和 p侧电极 8和 1。 当然， n侧和 p侧电极也可以 根据需要在以前的步骤中形成。
由于根据本发明的方法所使用的发光芯片是己经切割好的单颗独立芯片， 且用超声 波将复数个单颗独立发光芯片热压贴合到热沉基板上的温度不超过 1800C (现有技术的贴 合温度超过 3000C) , 故移除本发明中的单颗独立发光芯片的基板不会产生应力， 因此工 艺上更加简单， 增加了发光二极管的良率。 虽然参考其实施例具体显示和描述了本发明，然而本领域的普通技术人员可以理解， 在不脱离由权利要求所界定的本发明的精神和范围的情况下， 可以作出形式和细节上的 不同变化， 而这些变化将落在本发明的保护范围之内。
Claims
1、 一种发光二极管， 包括：
热沉基板；
形成于热沉基板上的金属接合层；
形成于金属接合层上的反射层；
形成于反射层上的发光叠层， 该发光叠层包括依次形成的 p型半导体层、发光层和 n 型半导体层； 以及
分别形成于热沉基板的背侧和 n型半导体层上的两个电极层。
2、 根据权利要求 1所述的发光二极管， 还可以包括透明电极层， 其形成于反射层和 发光叠层之间。
3、根据权利要求 2所述的发光二极管，其中透明电极层的材料选自氧化铟锡、 Ru02、 ΖπΟ及 NiO或其组合。
4、 根据权利要求 1或 2所述的发光二极管， 其中热沉基板的材料选自硅、 铜、 氮化 镓、 钼、 碳化硅或其组合。
5、根据权利要求 1或 2所述的发光二极管，其中金属接合层的材料选自 Al、 Ag、 Pt、 Cr、 Mo、 W、 Au或其组合。
6、根据权利要求 1或 2所述的发光二极管，其中反射层的材料选自 Al、 Ag、 Pt、 Cr、 Mo、 W、 Au或其组合。
7、 一种发光二极管的制造方法， 所述方法包括：
制备热沉基板；
在热沉基板的表面上镀覆金属接合层；
制备发光芯片， 所述发光芯片包括基板、 形成于基板上的发光叠层和形成于发光叠 层上的反射层， 所述发光叠层包括依次沉积的 n型半导体层、 发光层和 p型半导体层； 采用超声波热压法将热沉基板上的金属接合层与发光芯片上的反射层接合； 移除发光芯片的基板； 以及
在热沉基板的背面上和移除发光芯片的基板之后暴露的发光芯片表面上分别形成电 极。
8、 根据权利要求 7所述的方法， 其中所述发光芯片还包括形成于发光叠层和反射层 之间的透明电极层。
9、 根据权利要求 8所述的方法， 其中透明电极层的材料选自氧化铟锡、 Ru02、 ZnO 及 NiO或其组合。
10、 根据权利要求 7或 8所述的方法， 其中热沉基板的材料选自硅、 铜、 氮化镓、 钼、 碳化硅或其组合。
11、 根据权利要求 7或 8所述的方法， 其中金属接合层的材料选自 Al、 Ag、 Pt、 Cr、
Mo、 W、 Au或其组合。
12、 根据权利要求 7或 8所述的方法， 其中反射层的材料选自 Al、 Ag、 Pt、 Cr、 Mo、 W、 Au或其组合。
13、 根据权利要求 7或 8所述的方法， 其中移除发光芯片的基板的方法包括研磨抛 光、 化学溶剂剥离或激光剥离。
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| CN102110747A (zh) * | 2009-12-23 | 2011-06-29 | 永曜光电科技股份有限公司 | 倒装芯片式发光二极管模块的制造方法 |
| CN111211479A (zh) * | 2018-11-21 | 2020-05-29 | 深圳市中光工业技术研究院 | 半导体激光器芯片及其制备方法 |
| CN114725265A (zh) * | 2022-06-09 | 2022-07-08 | 山西中科潞安紫外光电科技有限公司 | 一种倒装深紫外二极管及倒装深紫外二极管的制备方法 |
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| CN1372329A (zh) * | 2001-02-27 | 2002-10-02 | 连威磊晶科技股份有限公司 | 具有高透光率的发光二极管元件 |
| JP2006179777A (ja) * | 2004-12-24 | 2006-07-06 | Iwasaki Electric Co Ltd | 反射型発光ダイオード |
| JP2006286666A (ja) * | 2005-03-31 | 2006-10-19 | Toshiba Corp | 半導体装置の製造方法 |
| US7256483B2 (en) * | 2004-10-28 | 2007-08-14 | Philips Lumileds Lighting Company, Llc | Package-integrated thin film LED |
| CN101226982A (zh) * | 2008-01-31 | 2008-07-23 | 鹤山丽得电子实业有限公司 | 一种发光二极管及其制造方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1372329A (zh) * | 2001-02-27 | 2002-10-02 | 连威磊晶科技股份有限公司 | 具有高透光率的发光二极管元件 |
| US7256483B2 (en) * | 2004-10-28 | 2007-08-14 | Philips Lumileds Lighting Company, Llc | Package-integrated thin film LED |
| JP2006179777A (ja) * | 2004-12-24 | 2006-07-06 | Iwasaki Electric Co Ltd | 反射型発光ダイオード |
| JP2006286666A (ja) * | 2005-03-31 | 2006-10-19 | Toshiba Corp | 半導体装置の製造方法 |
| CN101226982A (zh) * | 2008-01-31 | 2008-07-23 | 鹤山丽得电子实业有限公司 | 一种发光二极管及其制造方法 |
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