WO2009084293A1 - Semiconductor memory device - Google Patents

Semiconductor memory device Download PDF

Info

Publication number
WO2009084293A1
WO2009084293A1 PCT/JP2008/067596 JP2008067596W WO2009084293A1 WO 2009084293 A1 WO2009084293 A1 WO 2009084293A1 JP 2008067596 W JP2008067596 W JP 2008067596W WO 2009084293 A1 WO2009084293 A1 WO 2009084293A1
Authority
WO
WIPO (PCT)
Prior art keywords
fuse
power supply
memory device
semiconductor memory
flash memories
Prior art date
Application number
PCT/JP2008/067596
Other languages
French (fr)
Inventor
Masato Sugita
Keiji Maeda
Original Assignee
Kabushiki Kaisha Toshiba
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kabushiki Kaisha Toshiba filed Critical Kabushiki Kaisha Toshiba
Priority to KR1020097018036A priority Critical patent/KR101124838B1/en
Priority to US12/529,083 priority patent/US20100153625A1/en
Priority to EP08866072.5A priority patent/EP2225648B1/en
Publication of WO2009084293A1 publication Critical patent/WO2009084293A1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory

Definitions

  • the present invention relates to a semiconductor memory device such as a solid state drive (SSD) having a flash memory.
  • SSD solid state drive
  • An SSD that has a flash memory flash electrically erasable programmable read only memory (EEPROM) ) has attracted attention as an external or internal storage devices for a computer system, for example.
  • the flash memory has advantages such as high speed and light weight over a magnetic disk device.
  • the SSD has therein a plurality of flash memory chips, a controller that performs read/write control for each of the flash memory chips according to a request from a host apparatus, a buffer memory that transmits data between each of the flash memory chips and the host apparatus, a power supply circuit, and a connection interface for connecting with the host apparatus (for example, Patent Document 1) .
  • a controller that performs read/write control for each of the flash memory chips according to a request from a host apparatus
  • a buffer memory that transmits data between each of the flash memory chips and the host apparatus
  • a power supply circuit for example, Patent Document 1
  • an internal circuit cannot be protected when an overcurrent flows in the SSD. Due to the overcurrent, when a latch-up is generated in a CMOS mounting portion, malfunction of internal circuits may occur.
  • the flash memory chips, among other internal circuits within the SSD should be regarded in comparison with the other internal circuits as an important area to be protected from an overcurrent, because user data is stored therein.
  • Patent Document 1 Japanese Patent No. 3688835 The present invention has been made in view of the above mentioned circumstance, and an object of the present invention is to provide a semiconductor memory device capable of protecting at least a flash memory portion from an overcurrent to prevent malfunction due to a latch-up and the like.
  • One aspect of this invention is to provide a semiconductor memory device comprising a plurality of flash memories; a connector which is capable of connecting to a host apparatus; a cache memory for providing data transmission to the flash memories ; a controller that performs control of the data transmission to the flash memories; a power supply circuit that converts an external power supply voltage into an internal power supply voltage to supply the internal power supply voltage to the flash memories, ; and a fuse that protects at least the flash memories from an overcurrent, wherein the cache memory, the controller and the fuse are mounted on a substrate.
  • Fig. 1 is a functional block diagram of a configuration example of a semiconductor memory device according to a first embodiment of the present invention.
  • Fig. 2 is a plane view of a layout example of components on a substrate of the semiconductor memory device shown in Fig. 1.
  • Fig. 3 is a functional block diagram of a part of a configuration of a semiconductor memory device according to a second embodiment of the present invention.
  • Fig. 1 is a block diagram of a functional configuration example of an internal circuit of an SSD as a semiconductor memory device according to a first embodiment of the present invention.
  • an SSD 1 is connected to a host apparatus 100 such as a CPU core via a memory connection interface such as an At Attachment (ATA) interface, and functions as an external memory of the host apparatus 100.
  • the SSD 1 can send data to and receive data from a debugging device 200 via a communication interface such as an RS232C interface.
  • the SSD 1 includes a plurality of NAND flash memory chips (hereinafter, "NAND memories") 2, a drive control circuit 3 as a controller, a cache memory 4, a power supply circuit 5, a light emitting diode (LED) 7, and a fuse 10.
  • NAND memories NAND flash memory chips
  • Each of the NAND memories 2 has a memory cell transistor structure in which electric charges are taken in and out between a silicon substrate and a floating gate through FN (Fowler Nordheim) current that flows on a front surface of a channel.
  • the NAND memories 2 store therein data and application programs.
  • a single NAND memory 2 shown in Fig. 1 represents a block that performs a parallel operation, and four blocks perform four parallel operations.
  • Each of the NAND memories 2 has for example 16 NAND memory chips mounted thereon.
  • the cache memory 4 is configured by a dynamic random access memory (DRAM) or the like, and functions as a cache for data transmission between the host apparatus and each one of the NAND memories 2 and as a work area memory.
  • DRAM dynamic random access memory
  • the drive control circuit 3 controls data transmission between the host apparatus 100 and each of the NAND memories 2 via the cache memory 4, and controls components in the SSD 1.
  • the drive control circuit 3 supplies a status display signal to a status display LED 7, and receives a power on/off reset signal from the power supply circuit 5 to supply a reset signal and a clock signal to the respective units in its own circuit and the SSD 1.
  • the power supply circuit 5 generates a plurality of different internal direct current (DC) power supply voltages Vl, V2, and V3 (for example, 3.3V, 1.8V, and 1.2V) from an external DC power supply supplied from a power supply circuit on the side of the host apparatus 100, and supplies these internal DC power supply voltages Vl, V2, and V3 to each of the circuits within the SSD 1 via a plurality of internal power supply voltage lines.
  • the power supply circuit 5 detects a rising edge or a falling edge of an external power supply, generates a power on reset signal or a power off reset signal, and supplies the generated signal to the drive control circuit 3.
  • the fuse 10 is provided on the input side of the power supply circuit 5 to prevent an overcurrent, when generated, from entering into any of the internal circuits and thereby to prevent malfunction of the internal circuits due to a latch-up or the like.
  • a power fuse that melts down due to Joule heat generated, when a current exceeding a rated current flows may be adopted, or a self-recovery type resettable fuse (poly fuse) which does not require replacement may be adopted.
  • a fuse that melts down or cuts off a current when a current that is double the rated current plus a certain margin value flows is adopted.
  • the fuse 10 is provided to the external power supply line on the input side of the power supply circuit 5 to protect all the internal circuits in the SSD 1 from an overcurrent.
  • Fig. 2 is a plane view of a layout of the internal circuits of the SSD 1 shown in Fig. 1.
  • the NAND memories 2 are arranged in a NAND memory area 20 occupying most of the area of a package substrate.
  • a connector 15 has an interface such as an ATA interface, and an RS232C formed therein.
  • An external power supply is supplied to the power supply circuit 5 via the interfaces and an internal power supply wiring pattern, and connection is established between the host apparatus 100 or the debugging device 200 and the drive control circuit 3 via the interfaces.
  • the drive control circuit 3 is arranged closer to the connector 15 compared with the NAND memories 2 because the drive control circuit 3 needs to process high speed signal that is input/output via the ATA interface.
  • the cache memory 4 is disposed adjacent to the drive control circuit 3. Because long and wide external power supply line is not preferable in terms of a layout, the power supply circuit 5 is disposed in an area 30 near the connector 15. Thus, the fuse 10 is also disposed in the area 30 near the connector 15.
  • the NAND memory area 20 in which the NAND memories 2 are arranged is disposed around the drive control circuit 3, the cache memory 4, the power supply circuit 5, and the fuse 10. For example, the NAND memory area 20 may be disposed around the drive control circuit 3, along its long side and short side directions to maximize the memory capacity in a layout.
  • the fuse 10 is provided on the input side of the power supply circuit 5 to protect all the internal circuits within the SSD 1, it is possible to protect the internal circuits within the SSD from an overcurrent so as to prevent malfunction due to a latch-up and the like. Accordingly adverse influence of heat from the latch-up on the host apparatus 100 can be prevented.
  • the SSD includes, a modular type provided in a substrate that is exposed without a case, and a complete product type provided in a substrate that is housed in a case.
  • the modular type is more susceptible to noise, and latch-up occurs more frequently, compared with the complete product type. Therefore, effect of mounting the fuse 10 is more significant in the modular type.
  • Fig. 3 shows a circuit configuration in periphery of the power supply circuit 5 in an SSD according to a second embodiment of the present invention.
  • the fuse 10 is selectively provided only to an internal power supply line Vl connected to the NAND memory 2 among a plurality of internal power supply lines having different voltages (voltages Vl, V2, and V3) output from the power supply circuit 5. Accordingly, even when an overcurrent occurs, at least the NAND memory 2 is protected from the overcurrent by current interruption by the fuse 10.
  • the fuse 10 may be a power fuse or a resettable fuse.
  • the NAND memory 2 stores therein user data.
  • the important user data stored in the NAND memory 2 can be taken up, and retrieved afterwards.
  • retrieval of the data memorized in the NAND memory 2 is easier with the resettable fuse because it does not melt down like a power fuse.
  • the fuse 10 is disposed only to a part that enables protection of at least the most important NAND memory due to the spatial issue described above.
  • the fuse 10 is provided in the internal power supply line to the NAND memory 2 on the output side of the power supply circuit 5 to protect at least the NAND memory 2 from an overcurrent. Accordingly, malfunction of the NAND memory 2 due to a latch-up and the like can be prevented. Accordingly, adverse influence of heat on the host apparatus 100 due to the latch-up can be prevented.
  • the present invention is explained as being applied to the SSD having the NAND memory.
  • the present invention may be applied to a SSD having other types of flash EEPROM such as NOR type.
  • the fuse is provided to protect at least a flash memory from an overcurrent
  • the flash memory portion can be protected from an overcurrent, and malfunction due to a latch-up and the like can be prevented.

Landscapes

  • Techniques For Improving Reliability Of Storages (AREA)
  • Power Sources (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Memory System Of A Hierarchy Structure (AREA)

Abstract

A plurality of flash memories 2, a connector for establishing connection with a host apparatus 100, a cache memory 4 for data transmission between the flash memories 2 and the host apparatus 100, a drive control circuit 3 that controls the data transmission between the flash memories 2 and the host apparatus 100, and a power supply circuit 5 that converts an external power supply voltage into an internal power supply voltage are mounted on a substrate. A fuse 10 that protects at least the flash memories 2 from an overcurrent is provided on the substrate.

Description

DESCRIPTION
SEMICONDUCTOR MEMORY DEVICE
TECHNICAL FIELD
The present invention relates to a semiconductor memory device such as a solid state drive (SSD) having a flash memory.
BACKGROUND ART
An SSD that has a flash memory (flash electrically erasable programmable read only memory (EEPROM) ) has attracted attention as an external or internal storage devices for a computer system, for example. The flash memory has advantages such as high speed and light weight over a magnetic disk device.
The SSD has therein a plurality of flash memory chips, a controller that performs read/write control for each of the flash memory chips according to a request from a host apparatus, a buffer memory that transmits data between each of the flash memory chips and the host apparatus, a power supply circuit, and a connection interface for connecting with the host apparatus (for example, Patent Document 1) . In the conventional SSD, however, an internal circuit cannot be protected when an overcurrent flows in the SSD. Due to the overcurrent, when a latch-up is generated in a CMOS mounting portion, malfunction of internal circuits may occur. The flash memory chips, among other internal circuits within the SSD, should be regarded in comparison with the other internal circuits as an important area to be protected from an overcurrent, because user data is stored therein.
[Patent Document 1] Japanese Patent No. 3688835 The present invention has been made in view of the above mentioned circumstance, and an object of the present invention is to provide a semiconductor memory device capable of protecting at least a flash memory portion from an overcurrent to prevent malfunction due to a latch-up and the like.
DISCLOSURE OF INVENTION
One aspect of this invention is to provide a semiconductor memory device comprising a plurality of flash memories; a connector which is capable of connecting to a host apparatus; a cache memory for providing data transmission to the flash memories ; a controller that performs control of the data transmission to the flash memories; a power supply circuit that converts an external power supply voltage into an internal power supply voltage to supply the internal power supply voltage to the flash memories, ; and a fuse that protects at least the flash memories from an overcurrent, wherein the cache memory, the controller and the fuse are mounted on a substrate.
BRIEF DESCRIPTION OF DRAWINGS
Fig. 1 is a functional block diagram of a configuration example of a semiconductor memory device according to a first embodiment of the present invention. Fig. 2 is a plane view of a layout example of components on a substrate of the semiconductor memory device shown in Fig. 1. Fig. 3 is a functional block diagram of a part of a configuration of a semiconductor memory device according to a second embodiment of the present invention. BEST MODE(S) FOR CARRYING OUT THE INVENTION
Exemplary embodiments of a semiconductor memory device according to the present invention will be explained below in detail with reference to the accompanying drawings. First Embodiment
Fig. 1 is a block diagram of a functional configuration example of an internal circuit of an SSD as a semiconductor memory device according to a first embodiment of the present invention. In Fig. 1, an SSD 1 is connected to a host apparatus 100 such as a CPU core via a memory connection interface such as an At Attachment (ATA) interface, and functions as an external memory of the host apparatus 100. The SSD 1 can send data to and receive data from a debugging device 200 via a communication interface such as an RS232C interface. The SSD 1 includes a plurality of NAND flash memory chips (hereinafter, "NAND memories") 2, a drive control circuit 3 as a controller, a cache memory 4, a power supply circuit 5, a light emitting diode (LED) 7, and a fuse 10. Each of the NAND memories 2 has a memory cell transistor structure in which electric charges are taken in and out between a silicon substrate and a floating gate through FN (Fowler Nordheim) current that flows on a front surface of a channel. The NAND memories 2 store therein data and application programs. In this case, a single NAND memory 2 shown in Fig. 1 represents a block that performs a parallel operation, and four blocks perform four parallel operations. Each of the NAND memories 2 has for example 16 NAND memory chips mounted thereon. The cache memory 4 is configured by a dynamic random access memory (DRAM) or the like, and functions as a cache for data transmission between the host apparatus and each one of the NAND memories 2 and as a work area memory. The drive control circuit 3 controls data transmission between the host apparatus 100 and each of the NAND memories 2 via the cache memory 4, and controls components in the SSD 1. The drive control circuit 3 supplies a status display signal to a status display LED 7, and receives a power on/off reset signal from the power supply circuit 5 to supply a reset signal and a clock signal to the respective units in its own circuit and the SSD 1.
The power supply circuit 5 generates a plurality of different internal direct current (DC) power supply voltages Vl, V2, and V3 (for example, 3.3V, 1.8V, and 1.2V) from an external DC power supply supplied from a power supply circuit on the side of the host apparatus 100, and supplies these internal DC power supply voltages Vl, V2, and V3 to each of the circuits within the SSD 1 via a plurality of internal power supply voltage lines. The power supply circuit 5 detects a rising edge or a falling edge of an external power supply, generates a power on reset signal or a power off reset signal, and supplies the generated signal to the drive control circuit 3.
In the first embodiment, the fuse 10 is provided on the input side of the power supply circuit 5 to prevent an overcurrent, when generated, from entering into any of the internal circuits and thereby to prevent malfunction of the internal circuits due to a latch-up or the like. As the fuse 10, a power fuse that melts down due to Joule heat generated, when a current exceeding a rated current flows, may be adopted, or a self-recovery type resettable fuse (poly fuse) which does not require replacement may be adopted. As the fuse 10, for example, a fuse that melts down or cuts off a current when a current that is double the rated current plus a certain margin value flows is adopted. In the first embodiment, the fuse 10 is provided to the external power supply line on the input side of the power supply circuit 5 to protect all the internal circuits in the SSD 1 from an overcurrent.
Fig. 2 is a plane view of a layout of the internal circuits of the SSD 1 shown in Fig. 1. As shown in Fig. 2, the NAND memories 2 are arranged in a NAND memory area 20 occupying most of the area of a package substrate. A connector 15 has an interface such as an ATA interface, and an RS232C formed therein. An external power supply is supplied to the power supply circuit 5 via the interfaces and an internal power supply wiring pattern, and connection is established between the host apparatus 100 or the debugging device 200 and the drive control circuit 3 via the interfaces. The drive control circuit 3 is arranged closer to the connector 15 compared with the NAND memories 2 because the drive control circuit 3 needs to process high speed signal that is input/output via the ATA interface. The cache memory 4 is disposed adjacent to the drive control circuit 3. Because long and wide external power supply line is not preferable in terms of a layout, the power supply circuit 5 is disposed in an area 30 near the connector 15. Thus, the fuse 10 is also disposed in the area 30 near the connector 15. The NAND memory area 20 in which the NAND memories 2 are arranged is disposed around the drive control circuit 3, the cache memory 4, the power supply circuit 5, and the fuse 10. For example, the NAND memory area 20 may be disposed around the drive control circuit 3, along its long side and short side directions to maximize the memory capacity in a layout.
To conform to the size of a hard disk, area of the package substrate of the SSD is limited and, as shown in Fig. 2, the NAND memory area 20 occupies most of the area. Therefore, a number of circuits other than the NAND memory 2 have to be arranged in a small area. Generally, a power fuse that melts down is smaller than a resettable fuse. Therefore, when layout is limited as above, the layout work is easier with the power fuse.
As explained above, in the first embodiment, because the fuse 10 is provided on the input side of the power supply circuit 5 to protect all the internal circuits within the SSD 1, it is possible to protect the internal circuits within the SSD from an overcurrent so as to prevent malfunction due to a latch-up and the like. Accordingly adverse influence of heat from the latch-up on the host apparatus 100 can be prevented.
The SSD includes, a modular type provided in a substrate that is exposed without a case, and a complete product type provided in a substrate that is housed in a case. The modular type is more susceptible to noise, and latch-up occurs more frequently, compared with the complete product type. Therefore, effect of mounting the fuse 10 is more significant in the modular type. Second Embodiment
Fig. 3 shows a circuit configuration in periphery of the power supply circuit 5 in an SSD according to a second embodiment of the present invention. In the second embodiment, the fuse 10 is selectively provided only to an internal power supply line Vl connected to the NAND memory 2 among a plurality of internal power supply lines having different voltages (voltages Vl, V2, and V3) output from the power supply circuit 5. Accordingly, even when an overcurrent occurs, at least the NAND memory 2 is protected from the overcurrent by current interruption by the fuse 10. The fuse 10 may be a power fuse or a resettable fuse.
Among the internal circuits of the SSD 1, the NAND memory 2 stores therein user data. Thus, by preventing malfunction of the NAND memory 2 by protecting it from an overcurrent by the fuse 10 provided in a post stage of the power supply circuit 5, the important user data stored in the NAND memory 2 can be taken up, and retrieved afterwards. In this case, retrieval of the data memorized in the NAND memory 2 is easier with the resettable fuse because it does not melt down like a power fuse.
Providing the fuse 10 to each one of the internal power supply lines (voltages Vl, V2, and V3) output from the power supply circuit 5 facilitates an identification of a malfunctioning part. However, in the second embodiment, the fuse 10 is disposed only to a part that enables protection of at least the most important NAND memory due to the spatial issue described above. '
As described above, in the second embodiment, the fuse 10 is provided in the internal power supply line to the NAND memory 2 on the output side of the power supply circuit 5 to protect at least the NAND memory 2 from an overcurrent. Accordingly, malfunction of the NAND memory 2 due to a latch-up and the like can be prevented. Accordingly, adverse influence of heat on the host apparatus 100 due to the latch-up can be prevented.
In the embodiments, the present invention is explained as being applied to the SSD having the NAND memory. The present invention may be applied to a SSD having other types of flash EEPROM such as NOR type.
According to the present invention, because the fuse is provided to protect at least a flash memory from an overcurrent, the flash memory portion can be protected from an overcurrent, and malfunction due to a latch-up and the like can be prevented.

Claims

1. A semiconductor memory device comprising a plurality of flash memories; a connector which is capable of connecting to a host apparatus; a cache memory for providing data transmission to the flash memories ; a controller that performs control of the data transmission to the flash memories; a power supply circuit that converts an external power supply voltage into an internal power supply voltage to supply the internal power supply voltage to the flash memories, ; and a fuse that protects at least the flash memories from an overcurrent, wherein the cache memory, the controller and the fuse are mounted on a substrate.
2. The semiconductor memory device according to claim 1, wherein the power supply circuit, the fuse, and the controller are gathered in an certain area and provided near the connector, and the flash memories are provided to surround at least two directions of the area.
3. The semiconductor memory device according to claim 1 or 2, wherein the fuse cuts off a current when a current that is double a rated current plus a certain margin value flows.
4. The semiconductor memory device according to claim 1 or 2, wherein the fuse is a power fuse or a self-recovery type resettable fuse.
5. The semiconductor memory device according to claim 1 or 2, wherein the flash memory is a NAND type memory.
6. The semiconductor memory device according to claim 1, wherein the fuse is provided on an input side of the power supply circuit.
7. The semiconductor memory device according to claim 6, wherein the power supply circuit, the fuse, and the controller are gathered in an certain area and provided near the connector, and the flash memories are provided to surround at least two directions of the area.
8. The semiconductor memory device according to claim 6 or 7, wherein the fuse cuts off a current when a current that is double a rated current plus a certain margin value flows .
9 The semiconductor memory device according to claim 6 or 7, wherein the fuse is a power fuse or a self-recovery type resettable fuse.
10. The semiconductor memory device according to claim 6 or 7, wherein the flash memory is a NAND memory.
11. The semiconductor memory device according to claim 1, wherein the power supply circuit has a plurality of internal power supply voltage lines that output a plurality of different internal power supply voltages, and the fuse is provided selectively to an internal power supply voltage line that supplies the internal power supply voltage to the flash memories among the internal power supply voltage lines.
12. The semiconductor memory device according to claim 11, wherein the power supply circuit, the fuse, and the controller are gathered in an certain area and provided near the connector, and the flash memories are provided to surround at least two directions of the area.
13. The semiconductor memory device according to claim 11 or 12, wherein the fuse cuts off a current when a current that is double a rated current plus a certain margin value flows.
14. The semiconductor memory device according to claim 11 or 12, wherein the fuse is a power fuse or a self-recovery type resettable fuse.
15. The semiconductor memory device according to claim 11 or 12, wherein the flash memory is a NAND type memory.
PCT/JP2008/067596 2007-12-28 2008-09-22 Semiconductor memory device WO2009084293A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020097018036A KR101124838B1 (en) 2007-12-28 2008-09-22 Solid state drive
US12/529,083 US20100153625A1 (en) 2007-12-28 2008-09-22 Semiconductor memory device
EP08866072.5A EP2225648B1 (en) 2007-12-28 2008-09-22 Semiconductor memory device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-340957 2007-12-28
JP2007340957A JP5161560B2 (en) 2007-12-28 2007-12-28 Semiconductor memory device

Publications (1)

Publication Number Publication Date
WO2009084293A1 true WO2009084293A1 (en) 2009-07-09

Family

ID=40824019

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067596 WO2009084293A1 (en) 2007-12-28 2008-09-22 Semiconductor memory device

Country Status (6)

Country Link
US (1) US20100153625A1 (en)
EP (1) EP2225648B1 (en)
JP (1) JP5161560B2 (en)
KR (1) KR101124838B1 (en)
CN (1) CN101622609A (en)
WO (1) WO2009084293A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012020571A1 (en) * 2010-08-10 2012-02-16 Gvbb Holdings S.A.R.L. Electronic circuit
US20140319675A1 (en) * 2011-03-16 2014-10-30 Kabushiki Kaisha Toshiba Semiconductor memory system

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5396415B2 (en) * 2011-02-23 2014-01-22 株式会社東芝 Semiconductor device
US9659600B2 (en) 2014-07-10 2017-05-23 Sap Se Filter customization for search facilitation
JP5624578B2 (en) * 2012-03-23 2014-11-12 株式会社東芝 Memory system
KR101988430B1 (en) 2012-11-12 2019-06-13 삼성전자주식회사 Memory controller and user system including the same
TWI548042B (en) * 2013-04-23 2016-09-01 巨擘科技股份有限公司 Electrical system and core module thereof
JP5869058B2 (en) * 2014-06-30 2016-02-24 株式会社東芝 Semiconductor device and system
US9880574B2 (en) 2015-03-02 2018-01-30 Texas Instruments Incorporated Power combiner and balancer
JP6374977B2 (en) * 2015-12-30 2018-08-15 深▲せん▼市江波龍電子有限公司 SSD parts and SSD
JP6511123B2 (en) * 2017-12-19 2019-05-15 東芝メモリ株式会社 Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10171936A (en) * 1996-12-05 1998-06-26 Hitachi Maxell Ltd Pc card
JPH1173378A (en) * 1997-08-27 1999-03-16 Oki Electric Ind Co Ltd Method for calculating life of semiconductor disk device

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3933118A1 (en) * 1989-10-04 1991-04-11 Telefonbau & Normalzeit Gmbh Overcurrent protection circuit for variety of electronic subassemblies - ensures continuing isolation of defective circuit by rupture of fuse on deviation from normal current consumption
JPH06250799A (en) * 1993-02-26 1994-09-09 Toshiba Corp Semiconductor disk device and computer system using the same
JPH1196081A (en) * 1997-09-22 1999-04-09 Chishiki Joho Kenkyusho:Kk Method for controlling storage device, storage device and production of storage device
US6430692B1 (en) * 1998-09-25 2002-08-06 International Business Machines, Corporation Series-parallel battery array conversion
JP2002222031A (en) * 2001-01-25 2002-08-09 Toshiba Corp Information processor and power consumption control method for the same processor
JP4217388B2 (en) * 2001-06-26 2009-01-28 株式会社東芝 Semiconductor chip and semiconductor module
TWI241591B (en) * 2002-08-09 2005-10-11 Hitachi Ltd Semiconductor device and memory card using the same
JP2005144955A (en) * 2003-11-18 2005-06-09 Ricoh Co Ltd Image forming apparatus
TWI227499B (en) * 2003-12-11 2005-02-01 Carry Computer Eng Co Ltd Non-volatile storage device and controller and data transaction method thereof
US20050201030A1 (en) * 2004-03-15 2005-09-15 Tyco Electronics Corporation Protection circuit for dual voltage electrical distribution system
JP2005310285A (en) * 2004-04-22 2005-11-04 Toshiba Corp Semiconductor integrated circuit device
KR100790444B1 (en) * 2005-10-06 2008-01-02 주식회사 하이닉스반도체 Memory device
US7813096B2 (en) * 2005-12-26 2010-10-12 Autonetworks Technologies, Ltd. Power supply controller
US7609561B2 (en) * 2006-01-18 2009-10-27 Apple Inc. Disabling faulty flash memory dies
JP2007280554A (en) * 2006-04-11 2007-10-25 Hitachi Ltd Power supply unit for storage unit and method for managing storage unit
US7755132B2 (en) * 2006-08-16 2010-07-13 Sandisk Corporation Nonvolatile memories with shaped floating gates
JP4372189B2 (en) * 2007-12-27 2009-11-25 株式会社東芝 Information processing apparatus and nonvolatile semiconductor memory drive

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10171936A (en) * 1996-12-05 1998-06-26 Hitachi Maxell Ltd Pc card
JPH1173378A (en) * 1997-08-27 1999-03-16 Oki Electric Ind Co Ltd Method for calculating life of semiconductor disk device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2225648A4 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012020571A1 (en) * 2010-08-10 2012-02-16 Gvbb Holdings S.A.R.L. Electronic circuit
US9160157B2 (en) 2010-08-10 2015-10-13 Gvbb Holdings S.A.R.L. Electronic circuit
US20140319675A1 (en) * 2011-03-16 2014-10-30 Kabushiki Kaisha Toshiba Semiconductor memory system
US9312215B2 (en) * 2011-03-16 2016-04-12 Kabushiki Kaisha Toshiba Semiconductor memory system

Also Published As

Publication number Publication date
EP2225648A1 (en) 2010-09-08
JP2009163409A (en) 2009-07-23
EP2225648B1 (en) 2013-08-28
KR20090117760A (en) 2009-11-12
JP5161560B2 (en) 2013-03-13
KR101124838B1 (en) 2012-04-12
CN101622609A (en) 2010-01-06
EP2225648A4 (en) 2011-02-16
US20100153625A1 (en) 2010-06-17

Similar Documents

Publication Publication Date Title
EP2225648B1 (en) Semiconductor memory device
US8611154B2 (en) Semiconductor device
US20160335220A1 (en) Stacked-device peripheral storage card
US10175898B2 (en) Semiconductor device and method of controlling semiconductor device
JP4585325B2 (en) Disk array device
US10475504B2 (en) Integrated protecting circuit of semiconductor device
US20090057417A1 (en) Ic card
JP2007066922A (en) Semiconductor integrated circuit device
US10853294B2 (en) Storage device and server device
US11539207B2 (en) Snapback electrostatic discharge protection for electronic circuits
US11004521B2 (en) Semiconductor device and semiconductor memory device
KR100897601B1 (en) Memory module for preventing system failure and System including the same
US10121519B2 (en) Semiconductor device and control method thereof
US20070217102A1 (en) Interface circuit for a functional unit of a multi-chip system
US7613940B2 (en) Method and apparatus for controlling power supply to recording devices of redundant-array-of-independent-disks group
US9846194B2 (en) Electrostatic protection circuit and semiconductor device including the same
KR100791003B1 (en) Semiconductor memory module and method of arranging terminals in the semiconductor memory module
US10579302B2 (en) Semiconductor device
US11914544B2 (en) Memory system, method of controlling memory system, and host system
CN102147644A (en) Main board and connector with voltage protection function
US20230307065A1 (en) Memory system
US20070018691A1 (en) Multi-pad structure for semiconductor device
KR200443273Y1 (en) Interface circuit for function unit of multi-chip system
JP2012129395A (en) Semiconductor device
KR20120083610A (en) Semiconductor module and system including the same

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880006549.4

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 12529083

Country of ref document: US

Ref document number: KR

Ref document number: 1020097018036

Country of ref document: KR

Ref document number: 2008866072

Country of ref document: EP

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08866072

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE