WO2009078201A1 - スピンバルブ素子の駆動方法及びスピンバルブ素子 - Google Patents
スピンバルブ素子の駆動方法及びスピンバルブ素子 Download PDFInfo
- Publication number
- WO2009078201A1 WO2009078201A1 PCT/JP2008/065409 JP2008065409W WO2009078201A1 WO 2009078201 A1 WO2009078201 A1 WO 2009078201A1 JP 2008065409 W JP2008065409 W JP 2008065409W WO 2009078201 A1 WO2009078201 A1 WO 2009078201A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- spin
- valve element
- layer
- ferromagnetic layers
- magnetic field
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/325—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being noble metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B15/00—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
- H03B15/006—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects using spin transfer effects or giant magnetoresistance
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- Hall/Mr Elements (AREA)
- Thin Magnetic Films (AREA)
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009546167A JP5534408B2 (ja) | 2007-12-19 | 2008-08-28 | スピンバルブ素子の駆動方法及びスピンバルブ素子 |
EP08863154.4A EP2234269B1 (en) | 2007-12-19 | 2008-08-28 | Spin-valve element driving method |
KR1020107008380A KR101291778B1 (ko) | 2007-12-19 | 2008-08-28 | 스핀 밸브 소자의 구동 방법 및 스핀 밸브 소자 |
US12/809,550 US7924609B2 (en) | 2007-12-19 | 2008-08-28 | Spin valve element driving method and spin valve element |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007327174 | 2007-12-19 | ||
JP2007-327174 | 2007-12-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009078201A1 true WO2009078201A1 (ja) | 2009-06-25 |
Family
ID=40795320
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/065409 WO2009078201A1 (ja) | 2007-12-19 | 2008-08-28 | スピンバルブ素子の駆動方法及びスピンバルブ素子 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7924609B2 (ja) |
EP (1) | EP2234269B1 (ja) |
JP (1) | JP5534408B2 (ja) |
KR (1) | KR101291778B1 (ja) |
WO (1) | WO2009078201A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013522931A (ja) * | 2010-03-26 | 2013-06-13 | クアルコム,インコーポレイテッド | 水平及び垂直な部分を備えるダマシン型磁気トンネル接合構造及びその製造方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5443783B2 (ja) * | 2009-02-24 | 2014-03-19 | 株式会社東芝 | 磁性発振素子 |
US8450818B2 (en) | 2009-06-18 | 2013-05-28 | Dmitri E. Nikonov | Methods of forming spin torque devices and structures formed thereby |
US8796794B2 (en) | 2010-12-17 | 2014-08-05 | Intel Corporation | Write current reduction in spin transfer torque memory devices |
US8604886B2 (en) | 2010-12-20 | 2013-12-10 | Intel Corporation | Spin torque oscillator having multiple fixed ferromagnetic layers or multiple free ferromagnetic layers |
FR3020220A1 (fr) * | 2014-04-17 | 2015-10-23 | St Microelectronics Crolles 2 | Generateur thermoelectrique comprenant un bilame deformable presentant des proprietes magnetiques |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006101040A1 (ja) * | 2005-03-18 | 2006-09-28 | Japan Science And Technology Agency | マイクロ波伝送回路一体型マイクロ波発生素子及びマイクロ波伝送回路一体型マイクロ波検出素子 |
JP2007124340A (ja) * | 2005-10-28 | 2007-05-17 | Toshiba Corp | 高周波発振素子、ならびにそれを用いた車載レーダー装置、車間通信装置および情報端末間通信装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001084756A (ja) | 1999-09-17 | 2001-03-30 | Sony Corp | 磁化駆動方法、磁気機能素子および磁気装置 |
US7152186B2 (en) * | 2003-08-04 | 2006-12-19 | Arm Limited | Cross-triggering of processing devices |
US7471491B2 (en) * | 2004-03-30 | 2008-12-30 | Kabushiki Kaisha Toshiba | Magnetic sensor having a frequency filter coupled to an output of a magnetoresistance element |
US7678475B2 (en) * | 2006-05-05 | 2010-03-16 | Slavin Andrei N | Spin-torque devices |
-
2008
- 2008-08-28 US US12/809,550 patent/US7924609B2/en not_active Expired - Fee Related
- 2008-08-28 JP JP2009546167A patent/JP5534408B2/ja not_active Expired - Fee Related
- 2008-08-28 WO PCT/JP2008/065409 patent/WO2009078201A1/ja active Application Filing
- 2008-08-28 EP EP08863154.4A patent/EP2234269B1/en not_active Not-in-force
- 2008-08-28 KR KR1020107008380A patent/KR101291778B1/ko not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006101040A1 (ja) * | 2005-03-18 | 2006-09-28 | Japan Science And Technology Agency | マイクロ波伝送回路一体型マイクロ波発生素子及びマイクロ波伝送回路一体型マイクロ波検出素子 |
JP2007124340A (ja) * | 2005-10-28 | 2007-05-17 | Toshiba Corp | 高周波発振素子、ならびにそれを用いた車載レーダー装置、車間通信装置および情報端末間通信装置 |
Non-Patent Citations (3)
Title |
---|
See also references of EP2234269A4 |
Y. SUZUKI ET AL.: "High-frequency characteristics of spin-transfer elements: oscillation/diode effects andhmagnetic noise", MAGNE, MAGN. SOC. JPN., vol. 2, no. 6, 2007, pages 282 |
YOSHISHIGE SUZUKI ET AL.: "Spin Chunyu Soshi no Koshuha Tokusei -Hasshin·Diode Koka to Magnetic Noise", MAGNETICS JAPAN, vol. 2, no. 6, 1 June 2007 (2007-06-01), pages 282 - 290, XP008137440 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013522931A (ja) * | 2010-03-26 | 2013-06-13 | クアルコム,インコーポレイテッド | 水平及び垂直な部分を備えるダマシン型磁気トンネル接合構造及びその製造方法 |
JP2015156488A (ja) * | 2010-03-26 | 2015-08-27 | クアルコム,インコーポレイテッド | 水平及び垂直な部分を備えるダマシン型磁気トンネル接合構造及びその製造方法 |
US9385308B2 (en) | 2010-03-26 | 2016-07-05 | Qualcomm Incorporated | Perpendicular magnetic tunnel junction structure |
Also Published As
Publication number | Publication date |
---|---|
EP2234269A4 (en) | 2013-09-11 |
US20100308946A1 (en) | 2010-12-09 |
JP5534408B2 (ja) | 2014-07-02 |
JPWO2009078201A1 (ja) | 2011-04-28 |
EP2234269A1 (en) | 2010-09-29 |
KR101291778B1 (ko) | 2013-07-30 |
EP2234269B1 (en) | 2015-10-14 |
US7924609B2 (en) | 2011-04-12 |
KR20100091158A (ko) | 2010-08-18 |
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