WO2009078124A1 - エピタキシャル成長方法 - Google Patents

エピタキシャル成長方法 Download PDF

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Publication number
WO2009078124A1
WO2009078124A1 PCT/JP2008/003359 JP2008003359W WO2009078124A1 WO 2009078124 A1 WO2009078124 A1 WO 2009078124A1 JP 2008003359 W JP2008003359 W JP 2008003359W WO 2009078124 A1 WO2009078124 A1 WO 2009078124A1
Authority
WO
WIPO (PCT)
Prior art keywords
reaction chamber
growth method
crystal substrate
upper wall
epitaxial growth
Prior art date
Application number
PCT/JP2008/003359
Other languages
English (en)
French (fr)
Inventor
Masato Ohnishi
Original Assignee
Shin-Etsu Handotai Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin-Etsu Handotai Co., Ltd. filed Critical Shin-Etsu Handotai Co., Ltd.
Priority to KR1020107012967A priority Critical patent/KR101526895B1/ko
Priority to DE112008003330.7T priority patent/DE112008003330B4/de
Priority to US12/743,976 priority patent/US8038793B2/en
Publication of WO2009078124A1 publication Critical patent/WO2009078124A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

　本発明は、少なくとも、下凸の上壁を有する反応室内に単結晶基板を配置し、反応室内にガス導入口から原料ガスおよびキャリアガスを導入して、単結晶基板上にエピタキシャル層を積層する枚葉式のエピタキシャル成長方法であって、ガス導入口から反応室内に導入するキャリアガスの流量に応じて、反応室の上壁の曲率半径および／またはガス導入口の上端と反応室の上壁の下端との高さ方向における差を調整してから、単結晶基板上にエピタキシャル層を積層するエピタキシャル成長方法を提供する。これにより、例えばエピタキシャルウエーハの品質や生産性の向上など、キャリアガスの流量の度合いによりもたらされる効果を得るとともに、膜厚形状を崩さずに、単結晶基板上にエピタキシャル層を積層することができる枚葉式のエピタキシャル成長方法が提供される。
PCT/JP2008/003359 2007-12-14 2008-11-18 エピタキシャル成長方法 WO2009078124A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020107012967A KR101526895B1 (ko) 2007-12-14 2008-11-18 에피텍셜 성장방법
DE112008003330.7T DE112008003330B4 (de) 2007-12-14 2008-11-18 Epitaktisches Wachstumsverfahren
US12/743,976 US8038793B2 (en) 2007-12-14 2008-11-18 Epitaxial growth method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007322814A JP5029340B2 (ja) 2007-12-14 2007-12-14 エピタキシャル成長方法
JP2007-322814 2007-12-14

Publications (1)

Publication Number Publication Date
WO2009078124A1 true WO2009078124A1 (ja) 2009-06-25

Family

ID=40795248

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/003359 WO2009078124A1 (ja) 2007-12-14 2008-11-18 エピタキシャル成長方法

Country Status (6)

Country Link
US (1) US8038793B2 (ja)
JP (1) JP5029340B2 (ja)
KR (1) KR101526895B1 (ja)
DE (1) DE112008003330B4 (ja)
TW (1) TWI445053B (ja)
WO (1) WO2009078124A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI706446B (zh) * 2017-12-25 2020-10-01 日商Ｓｕｍｃｏ股份有限公司 磊晶成長裝置及使用此裝置的半導體磊晶晶圓的製造方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008034260B4 (de) * 2008-07-16 2014-06-26 Siltronic Ag Verfahren zum Abscheiden einer Schicht auf einer Halbleiterscheibe mittels CVD in einer Kammer und Kammer zum Abscheiden einer Schicht auf einer Halbleiterscheibe mittels CVD
JP6052070B2 (ja) * 2013-06-17 2016-12-27 株式会社Sumco エピタキシャルウェーハの製造方法及びその製造装置
DE102016225137A1 (de) 2016-12-15 2018-06-21 Siltronic Ag Vorrichtung und Verfahren zum Abscheiden einer von Prozessgas stammenden Materialschicht auf einer Substratscheibe
CN110277304A (zh) * 2018-03-14 2019-09-24 胜高股份有限公司 外延晶片的制造方法及其制造装置
CN109273378B (zh) * 2018-09-20 2021-11-02 长江存储科技有限责任公司 平衡晶圆弯曲度分布的方法
US20220056583A1 (en) * 2020-08-18 2022-02-24 Globalwafers Co., Ltd. Window for chemical vapor deposition systems and related methods

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001044125A (ja) * 1999-07-29 2001-02-16 Applied Materials Inc エピタキシャル成長装置及び方法
JP2001512901A (ja) * 1997-08-06 2001-08-28 アプライド マテリアルズ インコーポレイテッド 大気圧又は大気圧以上で応力が減少したドーム型ウェハリアクタ容器窓

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4322592A (en) * 1980-08-22 1982-03-30 Rca Corporation Susceptor for heating semiconductor substrates
JP2714802B2 (ja) * 1988-03-18 1998-02-16 三菱化学株式会社 有機金属化学気相反応装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001512901A (ja) * 1997-08-06 2001-08-28 アプライド マテリアルズ インコーポレイテッド 大気圧又は大気圧以上で応力が減少したドーム型ウェハリアクタ容器窓
JP2001044125A (ja) * 1999-07-29 2001-02-16 Applied Materials Inc エピタキシャル成長装置及び方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI706446B (zh) * 2017-12-25 2020-10-01 日商Ｓｕｍｃｏ股份有限公司 磊晶成長裝置及使用此裝置的半導體磊晶晶圓的製造方法

Also Published As

Publication number Publication date
TW200947520A (en) 2009-11-16
DE112008003330T5 (de) 2010-12-02
US20100251958A1 (en) 2010-10-07
TWI445053B (zh) 2014-07-11
KR101526895B1 (ko) 2015-06-08
JP5029340B2 (ja) 2012-09-19
US8038793B2 (en) 2011-10-18
DE112008003330B4 (de) 2017-11-30
KR20100093563A (ko) 2010-08-25
JP2009147105A (ja) 2009-07-02

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