WO2009072573A1 - 半導体発光素子 - Google Patents

半導体発光素子 Download PDF

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Publication number
WO2009072573A1
WO2009072573A1 PCT/JP2008/072076 JP2008072076W WO2009072573A1 WO 2009072573 A1 WO2009072573 A1 WO 2009072573A1 JP 2008072076 W JP2008072076 W JP 2008072076W WO 2009072573 A1 WO2009072573 A1 WO 2009072573A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
type semiconductor
light
dielectric
semiconductor layer
Prior art date
Application number
PCT/JP2008/072076
Other languages
English (en)
French (fr)
Inventor
Yoichi Kurokawa
Hitoshi Kitagawa
Original Assignee
Alps Electric Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alps Electric Co., Ltd. filed Critical Alps Electric Co., Ltd.
Priority to JP2009544717A priority Critical patent/JPWO2009072573A1/ja
Publication of WO2009072573A1 publication Critical patent/WO2009072573A1/ja
Priority to US12/783,435 priority patent/US20100224901A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

【課題】光の放射効率が高く、かつ製造が容易な表面プラズモンを利用した半導体発光素子を提供する。 【解決手段】半導体発光素子を、基板１上に積層されたｎ型半導体層２と、ｎ型半導体層２上に積層された発光層３と、発光層３上に積層されたｐ型半導体層４と、ｐ型半導体層４上に積層された電極層５とから構成する。電極層５には透孔５ａを開設し、当該透孔５ａ内には、誘電体層６を充填する。誘電体層６は、透孔５ａのｐ型半導体層４側及び外面側を共に共振器の開放端として機能させ、表面プラズモンとｐ型半導体層４中を伝播する光の結合効率を高めると共に消衰断面積を大きくするため、表面プラズモンの波長λｐが誘電体層６中を伝播する発光層３の発光波長λ１よりも短くなる（λ１＞λｐ）誘電率を有する誘電体をもって形成する。
PCT/JP2008/072076 2007-12-07 2008-12-04 半導体発光素子 WO2009072573A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009544717A JPWO2009072573A1 (ja) 2007-12-07 2008-12-04 半導体発光素子
US12/783,435 US20100224901A1 (en) 2007-12-07 2010-05-19 Semiconductor light-emitting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-317365 2007-12-07
JP2007317365 2007-12-07

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/783,435 Continuation US20100224901A1 (en) 2007-12-07 2010-05-19 Semiconductor light-emitting device

Publications (1)

Publication Number Publication Date
WO2009072573A1 true WO2009072573A1 (ja) 2009-06-11

Family

ID=40717750

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/072076 WO2009072573A1 (ja) 2007-12-07 2008-12-04 半導体発光素子

Country Status (4)

Country Link
US (1) US20100224901A1 (ja)
JP (1) JPWO2009072573A1 (ja)
TW (1) TW200945627A (ja)
WO (1) WO2009072573A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011024615A1 (ja) * 2009-08-31 2011-03-03 国立大学法人京都大学 紫外線照射装置
US8953243B2 (en) 2010-03-25 2015-02-10 Samsung Electronics Co., Ltd. Anti-reflection structure using surface plasmon and high-K dielectric material and method of manufacturing the anti-reflection structure

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5047013B2 (ja) * 2008-03-12 2012-10-10 株式会社東芝 半導体発光素子及びその製造方法
CN102931324B (zh) * 2011-11-25 2014-11-26 俞国宏 一种led芯片

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005108982A (ja) * 2003-09-29 2005-04-21 Sanyo Electric Co Ltd 半導体発光素子
JP2006156947A (ja) * 2004-08-20 2006-06-15 Matsushita Electric Ind Co Ltd 半導体発光装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5174458B2 (ja) * 2004-07-08 2013-04-03 イオン オプティクス インコーポレイテッド 調整可能なフォトニック結晶
US7538357B2 (en) * 2004-08-20 2009-05-26 Panasonic Corporation Semiconductor light emitting device
US7417219B2 (en) * 2005-09-20 2008-08-26 The Board Of Trustees Of The Leland Stanford Junior University Effect of the plasmonic dispersion relation on the transmission properties of subwavelength holes
KR100888479B1 (ko) * 2007-07-25 2009-03-12 삼성전자주식회사 표면 플라즈몬 디스플레이 소자

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005108982A (ja) * 2003-09-29 2005-04-21 Sanyo Electric Co Ltd 半導体発光素子
JP2006156947A (ja) * 2004-08-20 2006-06-15 Matsushita Electric Ind Co Ltd 半導体発光装置

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
DONG-MING YEH ET AL.: "Surface plasmon coupling effect in an InGaN/GaN single-quantum-well light-emitting diode", APPLIED PHYSICS LETTERS, vol. 91, 23 October 2007 (2007-10-23), pages 171103 - 1 - 1... *
KOICHI OKAMOTO ET AL.: "Surface plasmon enhanced InGaN light emitter", PROC. OF SPIE, vol. 5733, 2005, pages 94 - 103 *
S. PILLAI ET AL.: "Enhanced emission from Si-based light-emitting diodes using surface plasmons", APPLIED PHYSICS LETTERS, vol. 88, 2006, pages 161102 - 1 - 1... *
SATOSHI SHINADA ET AL.: "Kinzoku Bisho Kaiko o Motsu Menhakko Laser no Kinsetsuba Kaiseki", IEICE TECHNICAL REPORT LQE, LASER. RYOSHI ELECTRONICS, vol. 98, no. 509, 1999, pages 19 - 24 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011024615A1 (ja) * 2009-08-31 2011-03-03 国立大学法人京都大学 紫外線照射装置
JP5548204B2 (ja) * 2009-08-31 2014-07-16 国立大学法人京都大学 紫外線照射装置
TWI514617B (zh) * 2009-08-31 2015-12-21 Univ Kyoto Ultraviolet radiation device
US8953243B2 (en) 2010-03-25 2015-02-10 Samsung Electronics Co., Ltd. Anti-reflection structure using surface plasmon and high-K dielectric material and method of manufacturing the anti-reflection structure

Also Published As

Publication number Publication date
TW200945627A (en) 2009-11-01
US20100224901A1 (en) 2010-09-09
JPWO2009072573A1 (ja) 2011-04-28

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