WO2009072573A1 - 半導体発光素子 - Google Patents
半導体発光素子 Download PDFInfo
- Publication number
- WO2009072573A1 WO2009072573A1 PCT/JP2008/072076 JP2008072076W WO2009072573A1 WO 2009072573 A1 WO2009072573 A1 WO 2009072573A1 JP 2008072076 W JP2008072076 W JP 2008072076W WO 2009072573 A1 WO2009072573 A1 WO 2009072573A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- type semiconductor
- light
- dielectric
- semiconductor layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 9
- 230000000644 propagated effect Effects 0.000 abstract 2
- 230000008033 biological extinction Effects 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 239000003989 dielectric material Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
【課題】光の放射効率が高く、かつ製造が容易な表面プラズモンを利用した半導体発光素子を提供する。 【解決手段】半導体発光素子を、基板1上に積層されたn型半導体層2と、n型半導体層2上に積層された発光層3と、発光層3上に積層されたp型半導体層4と、p型半導体層4上に積層された電極層5とから構成する。電極層5には透孔5aを開設し、当該透孔5a内には、誘電体層6を充填する。誘電体層6は、透孔5aのp型半導体層4側及び外面側を共に共振器の開放端として機能させ、表面プラズモンとp型半導体層4中を伝播する光の結合効率を高めると共に消衰断面積を大きくするため、表面プラズモンの波長λpが誘電体層6中を伝播する発光層3の発光波長λ1よりも短くなる(λ1>λp)誘電率を有する誘電体をもって形成する。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009544717A JPWO2009072573A1 (ja) | 2007-12-07 | 2008-12-04 | 半導体発光素子 |
US12/783,435 US20100224901A1 (en) | 2007-12-07 | 2010-05-19 | Semiconductor light-emitting device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007317365 | 2007-12-07 | ||
JP2007-317365 | 2007-12-07 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/783,435 Continuation US20100224901A1 (en) | 2007-12-07 | 2010-05-19 | Semiconductor light-emitting device |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009072573A1 true WO2009072573A1 (ja) | 2009-06-11 |
Family
ID=40717750
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/072076 WO2009072573A1 (ja) | 2007-12-07 | 2008-12-04 | 半導体発光素子 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20100224901A1 (ja) |
JP (1) | JPWO2009072573A1 (ja) |
TW (1) | TW200945627A (ja) |
WO (1) | WO2009072573A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011024615A1 (ja) * | 2009-08-31 | 2011-03-03 | 国立大学法人京都大学 | 紫外線照射装置 |
US8953243B2 (en) | 2010-03-25 | 2015-02-10 | Samsung Electronics Co., Ltd. | Anti-reflection structure using surface plasmon and high-K dielectric material and method of manufacturing the anti-reflection structure |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5047013B2 (ja) * | 2008-03-12 | 2012-10-10 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
CN102931324B (zh) * | 2011-11-25 | 2014-11-26 | 俞国宏 | 一种led芯片 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005108982A (ja) * | 2003-09-29 | 2005-04-21 | Sanyo Electric Co Ltd | 半導体発光素子 |
JP2006156947A (ja) * | 2004-08-20 | 2006-06-15 | Matsushita Electric Ind Co Ltd | 半導体発光装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2573149C (en) * | 2004-07-08 | 2017-06-06 | Ion Optics, Inc. | Tunable photonic crystal |
US7538357B2 (en) * | 2004-08-20 | 2009-05-26 | Panasonic Corporation | Semiconductor light emitting device |
US7417219B2 (en) * | 2005-09-20 | 2008-08-26 | The Board Of Trustees Of The Leland Stanford Junior University | Effect of the plasmonic dispersion relation on the transmission properties of subwavelength holes |
KR100888479B1 (ko) * | 2007-07-25 | 2009-03-12 | 삼성전자주식회사 | 표면 플라즈몬 디스플레이 소자 |
-
2008
- 2008-12-03 TW TW097146981A patent/TW200945627A/zh unknown
- 2008-12-04 JP JP2009544717A patent/JPWO2009072573A1/ja not_active Withdrawn
- 2008-12-04 WO PCT/JP2008/072076 patent/WO2009072573A1/ja active Application Filing
-
2010
- 2010-05-19 US US12/783,435 patent/US20100224901A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005108982A (ja) * | 2003-09-29 | 2005-04-21 | Sanyo Electric Co Ltd | 半導体発光素子 |
JP2006156947A (ja) * | 2004-08-20 | 2006-06-15 | Matsushita Electric Ind Co Ltd | 半導体発光装置 |
Non-Patent Citations (4)
Title |
---|
DONG-MING YEH ET AL.: "Surface plasmon coupling effect in an InGaN/GaN single-quantum-well light-emitting diode", APPLIED PHYSICS LETTERS, vol. 91, 23 October 2007 (2007-10-23), pages 171103 - 1 - 1... * |
KOICHI OKAMOTO ET AL.: "Surface plasmon enhanced InGaN light emitter", PROC. OF SPIE, vol. 5733, 2005, pages 94 - 103 * |
S. PILLAI ET AL.: "Enhanced emission from Si-based light-emitting diodes using surface plasmons", APPLIED PHYSICS LETTERS, vol. 88, 2006, pages 161102 - 1 - 1... * |
SATOSHI SHINADA ET AL.: "Kinzoku Bisho Kaiko o Motsu Menhakko Laser no Kinsetsuba Kaiseki", IEICE TECHNICAL REPORT LQE, LASER. RYOSHI ELECTRONICS, vol. 98, no. 509, 1999, pages 19 - 24 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011024615A1 (ja) * | 2009-08-31 | 2011-03-03 | 国立大学法人京都大学 | 紫外線照射装置 |
JP5548204B2 (ja) * | 2009-08-31 | 2014-07-16 | 国立大学法人京都大学 | 紫外線照射装置 |
TWI514617B (zh) * | 2009-08-31 | 2015-12-21 | Univ Kyoto | Ultraviolet radiation device |
US8953243B2 (en) | 2010-03-25 | 2015-02-10 | Samsung Electronics Co., Ltd. | Anti-reflection structure using surface plasmon and high-K dielectric material and method of manufacturing the anti-reflection structure |
Also Published As
Publication number | Publication date |
---|---|
JPWO2009072573A1 (ja) | 2011-04-28 |
TW200945627A (en) | 2009-11-01 |
US20100224901A1 (en) | 2010-09-09 |
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